PROJECT WORK DETAILS:
1) Date of Guide Allotment: 01-02-2021
2) Date of Base Paper selection: 05-03-2021
3) Title of the Base Paper: One-Sided Schmitt-Trigger-Based 9T SRAM Cell
for Near-Threshold Operation.
4) Year of Publication of the Base Paper: MAY 2020.
5) Base Paper Publisher: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS–
I.
6) Have you started the Base Paper work? (Yes / No): Yes
7) Have obtained any results related to your Base Paper? If yes, give
the details.
Software Tool – Tanner EDA
Schematics:
Schmitt Trigger_9T_SRAM:
Signature:
Test Bench Schmitt Trigger_9T_SRAM:
Simulation Result:
T-Spice
Power Results:
VVDD from time 0 to 1e-006
Average power consumed -> 2.140107e-005 watts
Max power 7.957008e-005 at time 2.1e-008
Min power 2.647794e-006 at time 6.105e-007
Delay:
delay
= 21.3845n
Area can be calculated by product of nanometer technology and no. of
transistors
Area = No. of Transistors * Nanometer Technology
Therefore, Area = 9 * 22nm = 198nm
Spice Netlist:
. include "C:\Users\komal\OneDrive\Desktop\One-Sided Schmitt-TriggerBased 9T SRAM Cell\22nm\ST_9T_SRAM\CMOS_22nm.md"
*************** Subcircuits *****************
Signature:
. subckt ST_9T_SRAM BL Q QB WL WWLA WWLB Gnd Vdd
MNMOS_1 Q WWLB N_2 0 NMOS W=2.5u L=250n AS=2.25p PS=6.8u
AD=2.25p PD=6.8u $ $x=0 $y=-600 $w=400 $h=600
MNMOS_2 QB Q N_1 0 NMOS W=2.5u L=250n AS=2.25p PS=6.8u AD=2.25p
PD=6.8u $ $x=2000 $y=0 $w=400 $h=600
MNMOS_3 N_1 Q Gnd 0 NMOS W=2.5u L=250n AS=2.25p PS=6.8u
AD=2.25p PD=6.8u $ $x=2000 $y=-600 $w=400 $h=600
MNMOS_4 WWLB QB N_1 0 NMOS W=2.5u L=250n AS=2.25p PS=6.8u
AD=2.25p PD=6.8u $ $x=3200 $y=-100 $w=600 $h=400 $r=90
MNMOS_5 BL WL Q 0 NMOS W=2.5u L=250n AS=2.25p PS=6.8u AD=2.25p
PD=6.8u $ $x=-1100 $y=100 $w=600 $h=400 $r=90 $m
MNMOS_6 N_2 QB Gnd 0 NMOS W=2.5u L=250n AS=2.25p PS=6.8u
AD=2.25p PD=6.8u $ $x=400 $y=-1200 $w=400 $h=600 $m
MPMOS_1 Q WWLA N_3 Vdd PMOS W=2.5u L=250n AS=2.25p PS=6.8u
AD=2.25p PD=6.8u $ $x=0 $y=300 $w=400 $h=600
MPMOS_2 N_3 QB Vdd Vdd PMOS W=2.5u L=250n AS=2.25p PS=6.8u
AD=2.25p PD=6.8u $ $x=400 $y=900 $w=400 $h=600 $m
MPMOS_3 QB Q Vdd Vdd PMOS W=2.5u L=250n AS=2.25p PS=6.8u
AD=2.25p PD=6.8u $ $x=2000 $y=600 $w=400 $h=600
.ends
***** Top Level *****
XST_9T_SRAM_1 BL Q QB WL WWLA WWLB Gnd Vdd ST_9T_SRAM $
$x=650 $y=550 $w=700 $h=500
VVDD Vdd Gnd DC 800m $ $x=-300 $y=-600 $w=400 $h=600
VBL BL Gnd BIT({0001101101100} ON=800m ) $ $x=-3200 $y=-600 $w=400
$h=600
VWL WL Gnd BIT({0011111111111111111} ON=800m ) $ $x=-1000 $y=-600
$w=400 $h=600
VWWLA WWLA Gnd BIT({0000100100100} ON=800m ) $ $x=-1700 $y=-600
$w=400 $h=600
VWWLB WWLB Gnd BIT({0000010010010} ON=800m ) $ $x=-2500 $y=-600
$w=400 $h=600
.PRINT TRAN V(BL) $ $x=-3050 $y=450 $w=300 $h=1500 $r=270
.PRINT TRAN V(Q) $ $x=1750 $y=250 $w=1500 $h=300
.PRINT TRAN V(QB) $ $x=1750 $y=350 $w=1500 $h=300
.PRINT TRAN V(WL) $ $x=-850 $y=450 $w=300 $h=1500 $r=270
.PRINT TRAN V(WWLA) $ $x=-1550 $y=450 $w=300 $h=1500 $r=270
Signature:
.PRINT TRAN V(WWLB) $ $x=-2350 $y=450 $w=300 $h=1500 $r=270
********* Simulation Settings - Analysis Section *********
.tran 5ns 1us
********* Simulation Settings - Additional SPICE Commands *********
.power VVDD
.measure tran delay trig V(BL) val=0.8 rise=1 targ V(QB) val=0.7 rise=1
.end
Output Waveform:
8) Have you attended the Project Review-1?
Yes
9) Date of Project Review-1: 18-06-2021
10)
What are the comments/suggestions of the reviewers?
Suggestion: Learn about the nanometer technology used in the
project and understand the model document.
Signature: