AON2803
20V Dual P-Channel MOSFET
General Description
Product Summary
The AON2803 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltage as low as 1.8V. This device is suitable
for use as a load switch or in PWM applications.
ID (at VGS=-4.5V)
-20V
-3.8A
RDS(ON) (at VGS=-4.5V)
< 70mΩ
RDS(ON) (at VGS =-2.5V)
< 90mΩ
RDS(ON) (at VGS =-1.8V)
< 115mΩ
DFN 2x2 Package
S1
G1
VDS
D2
D1
D2
Pin 1
D1
Pin 1
Top
G2
S1
Gate-Source Voltage
VGS
TA=25°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient B
Maximum Junction-to-Ambient B
Rev 0: August 2012
Steady-State
t ≤ 10s
Steady-State
V
A
1.5
W
0.95
TJ, TSTG
Symbol
t ≤ 10s
±8
-20
PD
TA=70°C
Units
V
-3
IDM
TA=25°C
Maximum
-20
-3.8
ID
TA=70°C
Pulsed Drain Current C
Power Dissipation A
S2
Bottom
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current
G2
G1
S2
RθJA
RθJA
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-55 to 150
Typ
35
65
120
175
°C
Max
45
85
155
235
Units
°C/W
°C/W
°C/W
°C/W
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AON2803
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20
-1
TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-0.4
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-20
VGS=-4.5V, ID=-3.8A
Static Drain-Source On-Resistance
TJ=125°C
Maximum Body-Diode Continuous Current
VGS=0V, VDS=-10V, f=1MHz
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
94
15
-0.66
mΩ
S
-1
V
-2
A
560
pF
80
pF
70
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgd
78
A
mΩ
IS
Gate Source Charge
70
mΩ
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Qgs
58
90
VDS=-5V, ID=-3.8A
Gate resistance
V
115
IS=-1A,VGS=0V
Rg
nA
-1
85
Diode Forward Voltage
Reverse Transfer Capacitance
±100
-0.6
70
Forward Transconductance
Output Capacitance
µA
VGS=-1.8V, ID=-2A
gFS
Coss
Units
VGS=-2.5V, ID=-3A
VSD
Crss
Max
V
VDS=-20V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=-4.5V, VDS=-10V, ID=-3.8A
VGS=-4.5V, VDS=-10V, RL=2.6Ω,
RGEN=3Ω
pF
15
30
8.5
12
Ω
nC
1.2
nC
2.1
nC
7.2
ns
36
ns
53
ns
tf
Turn-Off Fall Time
56
ns
trr
Body Diode Reverse Recovery Time
IF=-3.8A, dI/dt=100A/µs
37
Qrr
Body Diode Reverse Recovery Charge IF=-3.8A, dI/dt=100A/µs
27
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C.
B. The value of R θJA is measured with the device mounted on a minimum pad board. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C.
C. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: August 2012
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Page 2 of 5
AON2803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
-4.5V
VDS=-5V
-3.0V
-2.5V
16
15
-ID(A)
-ID (A)
12
10
-2.0V
125°C
8
5
25°C
4
VGS=-1.5V
0
0
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics
5
0
140
1
1.5
2
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics
3
Normalized On-Resistance
1.6
120
RDS(ON) (mΩ
Ω)
0.5
VGS=-1.8V
100
VGS=-2.5V
80
60
VGS=-4.5V
ID=-3.8A
1.4
VGS=-2.5V
ID=-3A
1.2
VGS=-1.8V
ID=-2A
1
VGS=-4.5V
40
0.8
0
2
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
180
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
ID=-3.8A
1E+01
1E+00
-IS (A)
RDS(ON) (mΩ
Ω)
140
100
125°C
125°C
1E-01
25°C
1E-02
60
1E-03
25°C
20
1E-04
0
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev 0: August 2012
2
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
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AON2803
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
5
VDS=-10V
ID=-3.8A
1200
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
800
Ciss
600
400
Coss
1
200
Crss
0
0
0
2
4
6
8
10
0
10
15
20
10000
100.0
TJ(Max)=150°C
TA=25°C
10µs
1000
10.0
100µs
RDS(ON)
limited
1.0
Power (W)
-ID (Amps)
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
-Qg (nC)
Figure 7: Gate-Charge Characteristics
1ms
10ms
10
10s
DC
TJ(Max)=150°C
TA=25°C
0.1
100
1
0.0
1E-06
0.01
0.1
1
-VDS (Volts)
10
0.0001
0.01
1
100
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=85°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Rev 0: August 2012
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Page 4 of 5
AON2803
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
+
DUT
Qgs
Vds
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 0: August 2012
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5