Current Transducer HLSR-P series
IPN = 10 .. 50 A
Ref: HLSR 10-P, HLSR 20-P, HLSR 32-P, HLSR 40-P, HLSR 50-P
For the electronic measurement of current: DC, AC, pulsed..., with galvanic isolation
between the primary and the secondary circuit.
Features
Applications
●● Open loop multi-range current transducer
●● AC variable speed and servo motor drives
●● Voltage output
●● Static converters for DC motor drives
●● Single supply + 5 V
●● Battery supplied applications
●● Galvanic isolation between primary and secondary
●● Uninterruptible Power Supplies (UPS)
●● Low power consumption
●● Switched Mode Power Supplies (SMPS)
●● Compact design for THT PCB mounting
●● Power supplies for welding applications
●● Factory calibrated.
●● Combiner box
Advantages
●● MPPT.
●● Extremely low profile: h = 12mm
Standards
●● Low foot-print
●● EN 50178: 1997
●● Low offset drift
●● UL 508: 2004 - UR marking pending
●● Over-drivable VREF.
●● IEC 61010-1: 2010 (safety)
●● IEC 61326-1: 2012.
Application Domain
●● Industrial.
N°97.J3.13.000.0, N°97.J3.17.000.0, N°97.J3.J3.000.0, N°97.J3.23.000.0, N°97.J3.25.000.0
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HLSR-P series
Absolute maximum ratings
Parameter
Symbol
Unit
Value
Supply voltage (non destructive)
VC
V
8
Supply voltage (not entering non standard modes)
VC
V
6.5
Jumper temperature
°C
120
ESD rating, Human Body Model (HBM)
kV
2
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum ratings for extended periods may
degrade reliability.
Isolation characteristics
Parameter
Symbol
Unit
Min
RMS voltage for AC insulation test 50/60Hz/1 min
Vd
kV
4.3
Impulse withstand voltage 1.2/50 µs
Vw
kV
8
Clearance (pri. - sec.)
dCI
mm
>8
Shortest distance through air
Creepage distance (pri. - sec.)
dCp
mm
>8
Shortest path along device body
Clearance (pri. - sec.)
-
mm
8
When mounted on PCB with
recommended layout
Case material
-
-
V0
CTI
V
600
Application example
-
-
600 V CAT III
PD2
Reinforced isolation, non uniform
field according to
EN 50178
Application example
-
-
1000 V CAT III
PD2
Simple isolation, non uniform field
according to
EN 50178, EN 61010
600 V CAT III
PD2
According to UL 508
Comparative tracking index
Application example
Comment
According to UL 94
Environmental and mechanical characteristics
Parameter
Symbol
Unit
Min
Ambient operating temperature
TA
°C
-40
105
Ambient storage temperature
TS
°C
-40
105
Surrounding temperature according to UL 508
Mass
m
Typ
Max
°C
85
g
5
Comment
Page 2/9
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HLSR-P series
Electrical data HLSR 10-P
At TA = 25°C, VC = + 5 V, RL = 10 kΩ, unless otherwise noted.
Parameter
Unit
Primary nominal current rms
IPN
A
Primary current, measuring range
IPM
A
Primary turns
NP
-
1
Primary jumper resistance @ TA = 25°C
RP
mΩ
0.21
Primary jumper resistance @ TA = 105°C
RP
mΩ
0.29
Supply voltage 1)
VC
V
Current consumption
IC
Theoretical sensitivity
GTH
Output voltage range @ IPM
VOUT-VREF
Min
Typ
Symbol
Max
Comment
25
For VC < 4.75 V, IPM = 2.5 x IPN
- 8 x (4.75-VC)
10
-25
4.5
Tjumper = 120°C
5
5.5
mA
19
25
mV/A
80
V
-2
800 mV @ IPN
2
Over operating temperature
range
Reference voltage (output)
VREF
V
2.48
Reference voltage (input)
VREF
V
0.5
VREF output resistance
RREF
Ω
130
VOUT output resistance
ROUT
Ω
Allowed Capacitive load
CL
nF
0
6
Electrical offset voltage @ IP = 0
VOE
mV
-5
5
Electrical offset current referred to primary
IOE
mA
-62.5.
62.5
Offset drift VOUT-VREF @ IP = 0
TCVOE
mV/K
-0.075.
0.075
- 40°C .. 105°C
Offset drift referred to primary
@ IP = 0
TCIOE
mA/K
-0.94
0.94
- 40°C .. 105°C
Temperature coefficient of VREF
TCVREF
ppm/K
-170
170
- 40°C .. 105°C
TCG
ppm/K
-200
200
- 40°C .. 105°C
Linearity error 0 .. IPN
ε
% of IPN
-0.5
0.5
Linearity error .. 0 .. IPM
ε
% of IPM
-0.5
0.5
Magnetic offset current (@ 10 x IPN) referred to primary
IOM
A
-0.25
0.25
Output voltage noise (spectral density)
100 Hz .. 100 kHz
e
Output voltage noise DC ..10 kHz
DC ..100 kHz
DC .. 1 MHz
Vno
mVpp
Reaction time @ 10 % of IPN
tra
µs
2.5
Response time @ 90 % of IPN
tr
µs
3.5
Frequency bandwidth (- 3 dB)
BW
kHz
X
% of IPN
-1
1
X105°C
% of IPN
-3.4
3.4
See formula 2)
ε
%
-0.5
0.5
Factory adjustment
Sensitivity drift
L
L
Accuracy @ IPN
Accuracy @ IPN @ TA = + 105°C
Sensitivity error @ IPN
no
G
Notes: 1) 3.3 V SP version available
2)
Accuracy @ TA and @ IP :
XTA = X + (
TCG
10000
µVrms/
× (TA
2.5
2.52
Internal reference
2.65
External reference
200
300
series
2
5
series
Hz
VOUT-VREF @ VREF = 2.5 V
28
17.5
46.1
65.7
240
25) +
TCIOE
1000×IP
× 100 × (TA
25))
Page 3/9
14December2012/version 1
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HLSR-P series
Electrical data HLSR 20-P
At TA = 25°C, VC = + 5 V, RL = 10 kΩ, unless otherwise noted.
Parameter
Unit
Primary nominal current rms
IPN
A
Primary current, measuring range
IPM
A
Primary turns
NP
-
1
Primary jumper resistance @ TA = 25°C
RP
mΩ
0.21
Primary jumper resistance @ TA = 105°C
RP
mΩ
0.29
Supply voltage 1)
VC
V
Current consumption
IC
Theoretical sensitivity
GTH
Output voltage range @ IPM
Min
Typ
Symbol
Max
Comment
50
For VC < 4.75 V, IPM = 2.5 x IPN
- 8 x (4.75-VC)
20
-50
5
5.5
mA
19
25
mV/A
40
VOUT-VREF
4.5
Tjumper = 120°C
V
-2
800 mV @ IPN
2
Over operating temperature
range
Reference voltage (output)
VREF
V
2.48
Reference voltage (input)
VREF
V
0.5
VREF output resistance
RREF
Ω
130
VOUT output resistance
ROUT
Ω
CL
nF
0
6
Electrical offset voltage @ I = 0
VOE
mV
-5
5
Electrical offset current referred to primary
IOE
mA
-125.
125
Offset drift VOUT-VREF @ IP = 0
TCVOE
mV/K
-0.075.
0.075
- 40°C .. 105°C
Offset drift referred to primary
@ IP = 0
TCIOE
mA/K
-1.88
1.88
- 40°C .. 105°C
Temperature coefficient of VREF
TCVREF
ppm/K
-170
170
- 40°C .. 105°C
TCG
ppm/K
-200
200
- 40°C .. 105°C
Linearity error 0 .. IPN
ε
% of IPN
-0.5
0.5
Linearity error .. 0 .. IPM
ε
% of IPM
-0.5
0.5
Magnetic offset current (@ 10 x IPN) referred to primary
IOM
A
-0.25
0.25
Output voltage noise (spectral density)
100 Hz .. 100 kHz
e
Output voltage noise DC ..10 kHz
DC ..100 kHz
DC .. 1 MHz
Vno
mVpp
Reaction time @ 10 % of IPN
tra
µs
2.5
Response time @ 90 % of IPN
tr
µs
3.5
Frequency bandwidth (- 3 dB)
BW
kHz
X
% of IPN
-1
1
X105°C
% of IPN
-3.4
3.4
See formula 2)
ε
%
-0.5
0.5
Factory adjustment
Allowed Capacitive load
P
Sensitivity drift
Accuracy @ IPN
Accuracy @ IPN @ TA = + 105°C
Sensitivity error @ IPN
L
L
no
10000
2.52
Internal reference
2.65
External reference
200
300
series
2
5
series
µVrms/ Hz
G
Notes: 1) 3.3 V SP version available
TCG
2)
Accuracy @ TA and @ IP : XTA = X + (
2.5
× (TA
25) +
VOUT-VREF @ VREF = 2.5 V
14
9.2
22.8
33
240
TCIOE
1000×IP
× 100 × (TA
25))
Page 4/9
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HLSR-P series
Electrical data HLSR 32-P
At TA = 25°C, VC = + 5 V, RL = 10 kΩ, unless otherwise noted.
Parameter
Typ
Symbol
Unit
Primary nominal current rms
IPN
A
Primary current, measuring range
IPM
A
Primary turns
NP
-
1
Primary jumper resistance @ TA = 25°C
RP
mΩ
0.21
Primary jumper resistance @ TA = 105°C
RP
mΩ
0.29
Supply voltage 1)
VC
V
Current consumption
IC
Theoretical sensitivity
GTH
Output voltage range @ IPM
VOUT-VREF
Min
Max
Comment
80
For VC < 4.75 V, IPM = 2.5 x IPN
- 8 x (4.75-VC)
32
-80
4.5
Tjumper = 120°C
5
5.5
mA
19
25
mV/A
25
V
-2
800 mV @ IPN
2
Over operating temperature
range
Reference voltage (output)
VREF
V
2.48
Reference voltage (input)
VREF
V
0.5
VREF output resistance
RREF
Ω
130
VOUT output resistance
ROUT
Ω
Allowed Capacitive load
CL
nF
0
6
Electrical offset voltage @ IP = 0
VOE
mV
-5
5
Electrical offset current referred to primary
IOE
mA
-200.
200
Offset drift VOUT-VREF @ IP = 0
TCVOE
mV/K
-0.075.
0.075
- 40°C .. 105°C
Offset drift referred to primary
@ IP = 0
TCIOE
mA/K
-3
3
- 40°C .. 105°C
Temperature coefficient of VREF
TCVREF
ppm/K
-170
170
- 40°C .. 105°C
TCG
ppm/K
-200
200
- 40°C .. 105°C
Linearity error 0 .. IPN
ε
% of IPN
-0.5
0.5
Linearity error .. 0 .. IPM
ε
% of IPM
-0.5
0.5
Magnetic offset current (@ 10 x IPN) referred to primary
IOM
A
-0.25
0.25
Output voltage noise (spectral density)
100 Hz .. 100 kHz
e
Output voltage noise DC ..10 kHz
DC ..100 kHz
DC .. 1 MHz
Vno
mVpp
Reaction time @ 10 % of IPN
tra
µs
2.5
Response time @ 90 % of IPN
tr
µs
3.5
Frequency bandwidth (- 3 dB)
BW
kHz
X
% of IPN
-1
1
X105°C
% of IPN
-3.4
3.4
See formula 2)
ε
%
-0.5
0.5
Factory adjustment
Sensitivity drift
Accuracy @ IPN
Accuracy @ IPN @ TA = + 105°C
Sensitivity error @ IPN
L
L
no
G
Notes: 1) 3.3 V SP version available
2)
Accuracy @ TA and @ IP : XTA = X + ( TCG
10000
14December2012/version 1
µVrms/
× (TA
2.5
2.52
Internal reference
2.65
External reference
200
300
series
2
5
series
Hz
25) +
VOUT-VREF @ VREF = 2.5 V
8.75
6.2
14
20.7
240
TCIOE
1000×IP
× 100 × (TA
25))
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HLSR-P series
Electrical data HLSR 40-P
At TA = 25°C, VC = + 5 V, RL = 10 kΩ, unless otherwise noted.
Parameter
Unit
Primary nominal current rms
IPN
A
Primary current, measuring range
IPM
A
Primary turns
NP
-
1
Primary jumper resistance @ TA = 25°C
RP
mΩ
0.21
Primary jumper resistance @ TA = 105°C
RP
mΩ
0.29
Supply voltage 1)
VC
V
Current consumption
IC
Theoretical sensitivity
GTH
Output voltage range @ IPM
Min
Typ
Symbol
Max
Comment
100
For VC < 4.75 V, IPM = 2.5 x IPN
- 8 x (4.75-VC)
40
-100
5
5.5
mA
19
25
mV/A
20
VOUT-VREF
4.5
Tjumper = 120°C
V
-2
800 mV @ IPN
2
Over operating temperature
range
Reference voltage (output)
VREF
V
2.48
Reference voltage (input)
VREF
V
0.5
VREF output resistance
RREF
Ω
130
VOUT output resistance
ROUT
Ω
Allowed Capacitive load
CL
nF
0
6
Electrical offset voltage @ IP = 0
VOE
mV
-5
5
Electrical offset current referred to primary
IOE
mA
-250.
250
Offset drift VOUT-VREF @ IP = 0
TCVOE
mV/K
-0.075.
0.075
- 40°C .. 105°C
Offset drift referred to primary
@ IP = 0
TCIOE
mA/K
-3.75
3.75
- 40°C .. 105°C
Temperature coefficient of VREF
TCVREF
ppm/K
-170
170
- 40°C .. 105°C
TCG
ppm/K
-200
200
- 40°C .. 105°C
Linearity error 0 .. IPN
ε
% of IPN
-0.5
0.5
Linearity error .. 0 .. IPM
ε
% of IPM
-0.5
0.5
Magnetic offset current (@ 10 x IPN) referred to primary
IOM
A
-0.25
0.25
Output voltage noise (spectral density)
100 Hz .. 100 kHz
e
Output voltage noise DC ..10 kHz
DC ..100 kHz
DC .. 1 MHz
Vno
mVpp
Reaction time @ 10 % of IPN
tra
µs
2.5
Response time @ 90 % of IPN
tr
µs
3.5
Frequency bandwidth (- 3 dB)
BW
kHz
X
% of IPN
-1
1
X105°C
% of IPN
-3.4
3.4
See formula 2)
ε
%
-0.5
0.5
Factory adjustment
Sensitivity drift
Accuracy @ IPN
Accuracy @ IPN @ TA = + 105°C
Sensitivity error @ IPN
L
L
no
µVrms/
G
Notes: 1) 3.3 V SP version available
TCG
2)
Accuracy @ TA and @ IP : XTA = X + (
10000
× (TA
2.5
2.52
Internal reference
2.65
External reference
200
300
series
2
5
series
Hz
25) +
VOUT-VREF @ VREF = 2.5 V
7
5.1
11.1
16.6
240
TCIOE
1000×IP
× 100 × (TA
25))
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HLSR-P series
Electrical data HLSR 50-P
At TA = 25°C, VC = + 5 V, RL = 10 kΩ, unless otherwise noted.
Parameter
Unit
Primary nominal current rms
IPN
A
Primary current, measuring range
IPM
A
Primary turns
NP
-
1
Primary jumper resistance @ TA = 25°C
RP
mΩ
0.21
Primary jumper resistance @ TA = 105°C
RP
mΩ
0.29
Supply voltage 1)
VC
V
Current consumption
IC
Theoretical sensitivity
GTH
Output voltage range @ IPM
Min
Typ
Symbol
Max
Comment
125
For VC < 4.75 V, IPM = 2.5 x IPN
- 8 x (4.75-VC)
50
-125
5
5.5
mA
19
25
mV/A
16
VOUT-VREF
4.5
Tjumper = 120°C
V
-2
800 mV @ IPN
2
Over operating temperature
range
Reference voltage (output)
VREF
V
2.48
Reference voltage (input)
VREF
V
0.5
VREF output resistance
RREF
Ω
130
VOUT output resistance
ROUT
Ω
Allowed Capacitive load
CL
nF
0
6
Electrical offset voltage @ IP = 0
VOE
mV
-5
5
Electrical offset current referred to primary
IOE
mA
-313
313
Offset drift VOUT-VREF @ IP = 0
TCVOE
mV/K
-0.05
0.05
- 40°C .. 105°C
Offset drift referred to primary
@ IP = 0
TCIOE
mA/K
-4.7
4.7
- 40°C .. 105°C
Temperature coefficient of VREF
TCVREF
ppm/K
-170
170
- 40°C .. 105°C
TCG
ppm/K
-200
200
- 40°C .. 105°C
Linearity error 0 .. IPN
ε
% of IPN
-0.5
0.5
Linearity error .. 0 .. IPM
ε
% of IPM
-0.5
0.5
Magnetic offset current (@ 10 x IPN) referred to primary
IOM
A
-0.25
0.25
Output voltage noise (spectral density)
100 Hz .. 100 kHz
e
Output voltage noise DC ..10 kHz
DC ..100 kHz
DC .. 1 MHz
Vno
mVpp
Reaction time @ 10 % of IPN
tra
µs
2.5
Response time @ 90 % of IPN
tr
µs
3.5
Frequency bandwidth (- 3 dB)
BW
kHz
X
% of IPN
-1
1
X105°C
% of IPN
-3.4
3.4
See formula 2)
ε
%
-0.5
0.5
Factory adjustment
Sensitivity drift
Accuracy @ IPN
Accuracy @ IPN @ TA = + 105°C
Sensitivity error @ IPN
L
L
no
µVrms/
G
Notes: 1) 3.3 V SP version available
TCG
2)
Accuracy @ TA and @ IP : XTA = X + (
10000
× (TA
2.5
2.52
Internal reference
2.65
External reference
200
300
series
2
5
series
Hz
25) +
VOUT-VREF @ VREF = 2.5 V
5.6
4.3
8.8
13.3
240
TCIOE
1000×IP
× 100 × (TA
25))
Page 7/9
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LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice
www.lem.com
HLSR-P series
HLSR-P series, Maximum continuous DC current
60
50
Ip[A]
40
HLSR 10-P
HLSR 20-P
HLSR 32-P
HLSR 40-P
HLSR 50-P
30
20
10
0
-40
-20
0
20
40
60
80
100
120
140
TA[°C]
Important notice: whatever the usage and/or application, the transducer jumper temperature shall not go above the maximum
ratings of 120°C as stated in page 2 of this datasheet.
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HLSR-P series
HLSR-P series, PCB footprint (in mm. General linear tolerance ± 0.2 mm)
Assembly on PCB
●● Recommended PCB hole diameter 1.6 mm for primary pins
1 mm for secondary pins
●● Maximum PCB thickness
2.4 mm
●● Wave soldering profile
maximum 260°C for 10 s
No clean process only.
Safety
This transducer must be used in limited-energy secondary circuits according to IEC 61010-1.
This transducer must be used in electric/electronic equipment with respect to applicable standards and safety requirements in
accordance with the manufacturer’s operating instructions.
Caution, risk of electrical shock
When operating the transducer, certain parts of the module can carry hazardous voltage (eg. primary busbar, power supply).
Ignoring this warning can lead to injury and/or cause serious damage.
This transducer is a build-in device, whose conducting parts must be inaccessible after installation.
A protective housing or additional shield could be used.
Main supply must be able to be disconnected.
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HLSR-P series
HLSR-P series Dimensions (in mm. General linear tolerance ± 0.2 mm)
Connection
Remark
●● VOUT is positive with respect to VREF when positive IP flows in direction of the arrow shown on the drawing above.
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