PD -2.444 rev. B 02/99 HFA105NH60 HEXFRED Ultrafast, Soft Recovery Diode TM LUG TERMINAL ANODE Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters a d BASE CATHODE V R = 600V V F(typ.) = 1.2V IF(AV) = 105A Qrr (typ.) = 450nC IRRM(typ.) = 10A trr(typ.) = 35ns di(rec)M/dt (typ.) = 240A/µs Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM HALF-PAK Absolute Maximum Ratings Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Non-Repetitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. Units 600 171 85 600 220 463 185 V A µJ W -55 to +150 °C Thermal - Mechanical Characteristics Parameter RthJC RthCS Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Weight Mounting Torque Terminal Torque Vertical Pull 2 inch Lever Pull Note: Limited by junction temperature L = 100µH, duty cycle limited by max TJ 125°C Min. Typ. Max. Units 15 (1.7) 30 (3.4) 0.15 26 (0.9) 0.27 25 (2.8) 40 (4.6) 35 35 °C/W K/W g (oz) lbfin (Nm) lbfin Mounting surface must be smooth, flat, free or burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface. Gradually tighten each mounting bolt in 5-10 lbfin steps until desired or maximum torque limits are reached. Module 1 HFA105NH60 PD-2.444 rev. B 02/99 Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter VBR V FM Min. Typ. Max. Units Cathode Anode Breakdown Voltage Max Forward Voltage See Fig. 1 IRM Max Reverse Leakage Current See Fig. 2 CT Junction Capacitance LS Series Inductance 600 See Fig. 3 1.3 1.5 1.2 6.0 1.5 200 1.5 1.7 1.4 30 6.0 300 V µA mA pF 6.0 nH V Test Conditions IR = 100µA IF = 105A IF = 210A IF = 105A, T J = 125°C VR = VR Rated TJ = 125°C, VR = 480V VR = 200V From top of terminal hole to mounting plane Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified) Parameter trr trr1 trr2 IRRM1 IRRM2 Qrr1 Qrr2 di(rec)M /dt1 di(rec)M /dt2 Min. Typ. Max. Units Reverse Recovery Time See Fig. 5 Test Conditions 35 IF = 1.0A, dif /dt = 200A/µs, VR = 30V 90 140 ns TJ = 25°C 160 240 TJ = 125°C IF = 105A 10 18 TJ = 25°C A 15 30 TJ = 125°C VR = 200V 450 1300 TJ = 25°C nC 1200 3600 TJ = 125°C dif /dt = 200A/µs 310 TJ = 25°C A/µs 240 TJ = 125°C Peak Recovery Current See Fig. 6 Reverse Recovery Charge See Fig. 7 Peak Rate of Fall of Recovery Current During tb See Fig. 8 30.40 (1.197) 29.90 (1.177) 1/4-20 UNC-2B 19.69 (0.775) 18.42 (0.725) 4.11 (0.162) 3.86 (0.152) 12.83 (0.505) DIA. 12.57 (0.495) 4.11 (0.162) DIA. 3.86 (0.152) 19.18 (0.755) SQ. 18.92 (0.745) LEAD ASSIGNMENTS 1 - ANODE 2 - CATHODE 1 15.75 (0.620) 14.99 (0.590) 14.10 (0.555) 13.59 (0.535) 2 2 HALF-PAK Dimensions in millimeters and inche 39.62 (1.560) 38.61 (1.520) 3.30 (0.130) 3.05 (0.120) HFA105NH60 PD-2.444 rev. B 02/99 10000 Reverse Current - I R (µA) TJ = 150°C 100 TJ = 150°C TJ = 125°C 1000 TJ = 125°C 100 10 1 TJ = 25°C 0.1 0 TJ = 25°C 200 400 600 Reverse Voltage - VR (V) Fig. 2 - Typical Reverse Current vs. Reverse Voltage 10 Junction Capacitance - C T (pF) Instantaneous Forward Current - IF (A) 1000 10000 A TJ = 25°C 1000 1 0.0 1.0 2.0 3.0 4.0 Forward Voltage Drop - V FM (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 100 1 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance - Z thJC (K/W) 1 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 PDM t1 D = 0.08 t2 0.01 0.001 0.00001 Notes: 1. Duty factor D = t / t 1 2 Single Pulse (Thermal Resistance) 0.0001 0.001 2. Peak TJ = PDM x Z thJC + TC 0.01 0.1 1 10 100 t 1 , Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics 3 HFA105NH60 PD-2.444 rev. B 02/99 100 240 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 200 I F = 200A I IRRM - (A) t rr - (ns) IF = 105A 160 I F = 200A 120 I F = 105A I F = 40A 10 I F = 40A 80 40 100 di f /dt - (A/µs) 1 100 1000 Fig. 5 - Typical Reverse Recovery vs. dif/dt di f /dt - (A/µs) 1000 Fig. 6 - Typical Recovery Current vs. dif/dt 10000 4000 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) Q RR - (nC) 3000 IF = 200A 2000 I F = 105A I F = 40A I F = 200A 1000 I F = 105A I F = 40A 1000 0 100 di f /dt - (A/µs) Fig. 7 - Typical Stored Charge vs. dif/dt 4 1000 100 100 di f /dt - (A/µs) Fig. 8 - Typical di(rec)M/dt vs. dif/dt 1000 HFA105NH60 PD-2.444 rev. B 02/99 3 t rr IF tb ta 0 REVERSE RECOVERY CIRCUIT VR = 200V Q rr 2 I RRM 4 0.5 I RRM di(rec)M/dt 5 0.01 Ω 0.75 I RRM L = 70µH 1 D.U.T. D dif/dt ADJUST G di f /dt 1. dif/dt - Rate of change of current through zero crossing IRFP250 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current S Fig. 9 - Reverse Recovery Parameter Test Circuit L = 100µH 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions I L(PK) HIGH-SPEED SWITCH DUT Rg = 25 ohm CURRENT MONITOR FREE-WHEEL DIODE + DECAY TIME Vd = 50V V (AVAL) V R(RATED) Fig. 11 - Avalanche Test Circuit and Waveforms WORLD HEADQUARTERS: EUROPEAN HEADQUARTERS: IR CANADA: IR GERMANY: IR ITALY: IR FAR EAST: IR SOUTHEAST ASIA: IR TAIWAN: http://www.irf.com 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332. Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936. Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice. 5 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.