PD -2.467 rev. B 02/99
HFA160NJ40C
HEXFRED
Ultrafast, Soft Recovery Diode
TM
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
Recovery Parameters
LUG
TERMINAL
ANODE 1
LUG
TERMINAL
ANODE 2
BASE COMMON CATHODE
VR = 400V
V F(typ.)ƒ = 1V
IF(AV) = 160A
Qrr (typ.) = 420nC
IRRM(typ.) = 9.3A
trr(typ.) = 36ns
di(rec)M/dt (typ.)ƒ = 260A/µs
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally
suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
TM
TO-244AB
Absolute Maximum Ratings (per Leg)
Parameter
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
EAS
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current 
Non-Repetitive Avalanche Energy ‚
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
Units
400
170
84
600
1.4
310
125
V
A
mJ
W
-55 to +150
C
Thermal - Mechanical Characteristics
Parameter
RthJC
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
RthCS
Wt
Case-to-Sink, Flat, Greased Surface
Weight
Mounting Torque „
Mounting Torque Center Hole
Terminal Torque
Vertical Pull
2 inch Lever Pull
Note:  Limited by junction temperature
‚ L = 100µH, duty cycle limited by max TJ
ƒ 125°C
Min.
Typ.
Max.
Units
––––
––––
––––
––––
0.48
0.24
––––
––––
30 (3.4)
12 (1.4)
30 (3.4)
––––
––––
0.10
79 (2.8)
––––
––––
––––
––––
––––
––––
––––
40 (4.6)
18 (2.1)
40 (4.6)
80
35
°C/W
K/W
g (oz)
lbf•in
(N•m)
lbf•in
„ Mounting surface must be smooth, flat, free or burrs or other
protrusions. Apply a thin even film or thermal grease to mounting
surface. Gradually tighten each mounting bolt in 5-10 lbf•in steps
until desired or maximum torque limits are reached. Module
1
HFA160NJ40C
PD-2.467 rev. B 02/99
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
VBR
VFM
Min. Typ. Max. Units
Cathode Anode Breakdown Voltage
Max Forward Voltage
IRM
Max Reverse Leakage Current
CT
Junction Capacitance
LS
Series Inductance
400
–––
–––
–––
–––
–––
–––
–––
–––
1.1
1.3
1.0
1.0
1.5
180
–––
1.3
1.5
1.2
6.0
8.0
260
V
µA
mA
pF
7.0
–––
nH
V
Test Conditions
IR = 100µA
IF = 80A
IF = 160A
See Fig. 1
IF = 80A, TJ = 125°C
VR = VR Rated
See Fig. 2
TJ = 125°C, VR = 320V
VR = 200V
See Fig. 3
From top of terminal hole to mounting
plane
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M /dt1
di(rec)M /dt2
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During tb
80.01 (3.150)
40.26 (1.585)
39.75 (1.565)
Min. Typ. Max. Units
Test Conditions
––– 36 –––
––– 90 140
ns
––– 160 240
––– 9.3 17
A
––– 15
30
––– 420 1100
nC
––– 1200 3200
––– 360 –––
A/µs
––– 260 –––
IF = 1.0A, di f /dt = 200A/µs, VR = 30V
TJ = 25°C See Fig.
TJ = 125°C
5
IF = 80A
TJ = 25°C See Fig.
TJ = 125°C
6
VR = 200V
TJ = 25°C See Fig.
TJ = 125°C
7
dif /dt = 200A/µs
TJ = 25°C See Fig.
TJ = 125°C
8
10.41 (0.410)
DIA.
9.65 (0.380)
2
20.32 (0.800)
17.78 (0.700)
7.49 (0.295)
DIA.
6.99 (0.275)
(2 PLCS.)
34.925 (1.375)
REF.
63.50 (2.500)
60.96 (2.400)
1
4.95 (0.195)
DIA.
4.70 (0.185)
LEAD ASSIGNMENTS
1 - ANODE
2 - CATHODE
3 - ANODE
1/4-20 SLOTTED HEX
3
23.55 (0.927)
20.42 (0.804)
15.75 (0.620)
14.99 (0.590)
CONFORMS TO JEDEC
OUTLINE TO-244AB
Dimensions in Millimeters and (Inches)
92.71 (3.650)
90.17 (3.550)
2
3.35 (0.132)
3.02 (0.119)
HFA160NJ40C
PD-2.467 rev. B 02/99
Reverse Current - IR (µA)
10000
TJ = 150°C
100
TJ = 125°C
TJ = 150°C
1000
TJ = 125°C
100
10
1
TJ = 25°C
TJ = 25°C
0.1
0
100
200
300
400
Reverse Voltage - VR (V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage, (per Leg)
10
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
1000
10000
A
TJ = 25°C
1000
1
0.4
0.8
1.2
1.6
2.0
Forward Voltage Drop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current,
(per Leg)
100
1
10
100
1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage, (per Leg)
Thermal Impedance - Z thJC (K/W)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
PDM
t
1
t2
D = 0.08
0.01
Notes:
1. Duty factor D = t1 / t 2
Single Pulse
(Thermal Resistance)
2. Peak TJ = PDM x Z thJC + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t 1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics, (per Leg)
3
HFA160NJ40C
PD-2.467 rev. B 02/99
240
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
200
I IRRM - (A)
IF = 200A
t rr - (ns)
160
I F = 200A
I F = 80A
120
IF = 80A
I F = 40A
10
I F = 40A
80
40
100
di f /dt - (A/µs)
1
100
1000
Fig. 5 - Typical Reverse Recovery vs. dif/dt,
(per Leg)
di f /dt - (A/µs)
1000
Fig. 6 - Typical Recovery Current vs. dif/dt,
(per Leg)
5000
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
3000
di(rec)M/dt - (A/µs)
Q RR - (nC)
4000
IF = 200A
I F = 80A
2000
IF = 40A
I F = 40A
1000
I F = 80A
IF = 200A
1000
0
100
di f /dt - (A/µs)
Fig. 7 - Typical Stored Charge vs. dif/dt,
(per Leg)
4
1000
100
100
di f /dt - (A/µs)
Fig. 8 - Typical di(rec)M/dt vs. dif/dt,
(per Leg)
1000
HFA160NJ40C
PD-2.467 rev. B 02/99
3
t rr
IF
tb
ta
0
REVERSE RECOVERY CIRCUIT
VR = 200V
Q rr
2
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.01 Ω
0.75 I RRM
L = 70µH
1
D.U.T.
1. dif /dt - Rate of change of current
through zero crossing
D
dif/dt
ADJUST G
di f /dt
IRFP250
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going I F to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
L = 100µH
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Definitions
I L(PK)
HIGH-SPEED
SWITCH
DUT
Rg = 25 ohm
CURRENT
MONITOR
FREE-WHEEL
DIODE
+
DECAY
TIME
Vd = 50V
V (AVAL)
V R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
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Data and specifications subject to change without notice.
5