PD -2.452 rev. B 03/99
HFA180NH40
HEXFRED
Ultrafast, Soft Recovery Diode
TM
LUG
TERMINAL
ANODE
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
Recovery Parameters
a
d
BASE CATHODE
VR = 400V
V F(typ.)ƒ = 1.1V
IF(AV) = 180A
Qrr (typ.) = 420nC
IRRM(typ.) = 8.7A
trr(typ.) = 45ns
di(rec)M/dt (typ.)ƒ = 280A/µs
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
TM
HALF-PAK
Absolute Maximum Ratings (per Leg)
Parameter
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
EAS
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current 
Non-Repetitive Avalanche Energy ‚
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
Units
400
321
160
1200
1.4
625
250
V
A
mJ
W
-55 to +150
°C
Thermal - Mechanical Characteristics
Parameter
RthJC
RthCS
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Weight
Mounting Torque „
Terminal Torque
Vertical Pull
2 inch Lever Pull
Note:  Limited by junction temperature
‚ L = 100µH, duty cycle limited by max TJ
ƒ 125°C
Min.
Typ.
Max.
Units
––––
––––
––––
15 (1.7)
30 (3.4)
––––
––––
––––
0.15
26 (0.9)
––––
––––
––––
––––
0.20
––––
––––
25 (2.8)
40 (4.6)
35
35
°C/W
K/W
g (oz)
lbf•in
(N•m)
lbf•in
„ Mounting surface must be smooth, flat, free or burrs or other
protrusions. Apply a thin even film or thermal grease to mounting
surface. Gradually tighten each mounting bolt in 5-10 lbf•in steps
until desired or maximum torque limits are reached. Module
1
HFA180NH40
PD-2.452 rev. B 03/99
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
VBR
V FM
Min. Typ. Max. Units
Cathode Anode Breakdown Voltage
Max Forward Voltage
See Fig. 1
IRM
Max Reverse Leakage Current
See Fig. 2
CT
Junction Capacitance
LS
Series Inductance
See Fig. 3
400 ––– –––
––– 1.10 1.35
––– 1.40 1.65
––– 1.10 1.30
––– 2.0
12
––– 3.0
16
––– 370 500
µA
mA
pF
–––
nH
5.0
–––
V
V
Test Conditions
IR = 100µA
IF = 180A
IF = 360A
IF = 180A, T J = 125°C
VR = VR Rated
TJ = 125°C, VR = 320V
VR = 200V
From top of terminal hole to mounting
plane
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M /dt1
di(rec)M /dt2
Min. Typ. Max. Units
Reverse Recovery Time
See Fig. 5
Test Conditions
––– 45 –––
IF = 1.0A, dif /dt = 200A/µs, VR = 30V
––– 90 140
ns TJ = 25°C
––– 290 440
TJ = 125°C
IF = 180A
––– 8.7
20
TJ = 25°C
A
––– 18
30
TJ = 125°C
VR = 200V
––– 420 1100
TJ = 25°C
nC
––– 2600 7000
TJ = 125°C
dif /dt = 200A/µs
––– 300 –––
TJ = 25°C
A/µs
––– 280 –––
TJ = 125°C
Peak Recovery Current
See Fig. 6
Reverse Recovery Charge
See Fig. 7
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8
30.40 (1.197)
29.90 (1.177)
1/4-20 UNC-2B
19.69 (0.775)
18.42 (0.725)
4.11 (0.162)
3.86 (0.152)
12.83 (0.505)
DIA.
12.57 (0.495)
4.11 (0.162)
DIA.
3.86 (0.152)
19.18 (0.755)
SQ.
18.92 (0.745)
LEAD ASSIGNMENTS
1 - ANODE
2 - CATHODE
1
15.75 (0.620)
14.99 (0.590)
14.10 (0.555)
13.59 (0.535)
2
2
39.62 (1.560)
38.61 (1.520)
3.30 (0.130)
3.05 (0.120)
HALF-PAK
Dimensions in millimeters and inches
HFA180NH40
PD-2.452 rev. B 03/99
100000
Reverse Current - I R (µA)
TJ = 150°C
100
TJ = 125°C
TJ = 25°C
TJ = 150°C
10000
1000
TJ = 125°C
100
10
TJ = 25°C
1
0.1
0
100
200
300
400
Reverse Voltage - VR (V)
10
Junction Capacitance - C T (pF)
Instantaneous Forward Current - IF (A)
1000
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
10000
A
TJ = 25°C
1000
1
0.4
0.8
1.2
1.6
2.0
Forward Voltage Drop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
100
1
10
100
1000
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Impedance - Z thJC (K/W )
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
PDM
t
1
t2
D = 0.08
0.01
0.001
0.00001
Notes:
1. Duty factor D = t / t
1 2
Single Pulse
(Thermal Resistance)
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
100
t 1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
3
HFA180NH40
PD-2.452 rev. B 03/99
100
500
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
IF = 200A
I F = 200A
300
I IRRM - (A)
t rr - (ns)
IF = 180A
IF = 70A
I F = 180A
10
I F = 70A
200
100
0
100
di f /dt - (A/µs)
1
100
1000
Fig. 5 - Typical Reverse Recovery vs. dif/dt
1000
di f /dt - (A/µs)
Fig. 6 - Typical Recovery Current vs. dif/dt
10000
6000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
di(rec)M/dt - (A/µs)
IF = 200A
4000
Q RR - (nC)
I F = 180A
I F = 70A
2000
0
100
di f /dt - (A/µs)
1000
Fig. 7 - Typical Stored Charge vs. dif/dt
4
IF = 70A
1000
IF = 180A
100
100
I F = 200A
di f /dt - (A/µs)
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
1000
HFA180NH40
PD-2.452 rev. B 03/99
3
t rr
IF
tb
ta
0
REVERSE RECOVERY CIRCUIT
VR = 200V
Q rr
2
I RRM
4
0.5 I RRM
di(rec)M/dt
5
0.01 Ω
0.75 I RRM
L = 70µH
1
D.U.T.
D
dif/dt
ADJUST G
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
IRFP250
4. Qrr - Area under curve defined by trr
and I RRM
t rr X IRRM
Qrr =
2
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 I RRM
extrapolated to zero current
S
Fig. 9 - Reverse Recovery Parameter Test
Circuit
L = 100µH
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Definitions
I L(PK)
HIGH-SPEED
SWITCH
DUT
Rg = 25 ohm
CURRENT
MONITOR
FREE-WHEEL
DIODE
+
DECAY
TIME
Vd = 50V
V (AVAL)
V R(RATED)
Fig. 11 - Avalanche Test Circuit and Waveforms
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Data and specifications subject to change without notice.
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