TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Applications
• Commercial and Military Radar
QFN 5x5 mm 32L
Product Features
Functional Block Diagram
Frequency Range: 2.7 - 3.7 GHz
PSAT: 42.5 dBm
PAE: > 50 %
Small Signal Gain: 32 dB
Return Loss: > 10 dB
Bias: VD = 28 V (CW or Pulsed), IDQ = 225 mA,
VG = −2.5 V Typical
• Package Dimensions: 5.0 x 5.0 x 1.45 mm
•
•
•
•
•
•
32
30
29
28
27
26
25
1
24
2
23
RF OUT 3
22
4
21
5
20
6
19
7
18
8
17
9
General Description
31
10
11
12
13
14
15
RF IN
16
Pin Configuration
TriQuint’s TGA2585-SM is a packaged MMIC power
amplifier which operates from 2.7 to 3.7 GHz. The
TGA2585-SM is designed using TriQuint’s production
0.25-μm GaN on SiC process.
The TGA2585-SM typically provides 42.5 dBm of
saturated output power, > 50% power-added efficiency,
and 32 dB small signal gain. It can operate under both
pulse and CW conditions.
Pad No.
Symbol
1, 3-4, 6, 8-9, 13, 16-17, 19,
21, 23-25, 32
GND
3
5, 7, 10-11, 15, 18, 20, 26-31
12
14
22
RF OUT
NC
DRAIN
GATE
RF IN
The TGA2585-SM is available in a low-cost, surface
mount 32 lead 5x5 AIN QFN. It is ideally suited to
support both commercial and defense related radar
applications.
Both RF ports have integrated DC blocking capacitors
and are fully matched to 50 ohms.
Ordering Information
Lead-free and RoHS compliant
Part
ECCN
Description
TGA2585-SM
3A001.b.2.a
2.7 - 3.7 GHz, 18 W
GaN Power Amplifier
Evaluation Boards are available upon request.
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Parameter
Drain Voltage (VD)
Gate Voltage Range (VG)
Drain Current (ID)
Gate Current (IG)
Power Dissipation (PDISS), 85°C
Input Power (PIN), CW, 50 Ω, 85°C
Input Power (PIN), CW, VSWR 10:1,
VD = 28 V, 85°C
Channel Temperature (TCH)
Mounting Temperature
(30 Seconds)
Storage Temperature
Value
40 V
−8 to 0 V
1530 mA
−7 to 11.5 mA
35 W
30 dBm
Value
Drain Voltage (VD)
Drain Current (IDQ)
Drain Current Under RF Drive (ID_DRIVE)
Gate Voltage (VG)
Gate Current Under RF Drive (IG_DRIVE)
28 V
225 mA
See plots p. 7
−2.5 V (Typ.)
See plots p. 7
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
23 dBm
275°C
260°C
−55 to 150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25 °C, VD = 28 V, IDQ = 225 mA, VG = −2.5 V Typ, Pulsed VD: PW = 100 us, DC = 10 %
Parameter
Operational Frequency Range
Small Signal Gain
Input Return Loss
Output Return Loss
Output Power at Saturation (PIN = 18 dBm)
Power-Added Efficiency (PIN = 18 dBm)
Gain Temperature Coefficient
Power Temperature Coefficient
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
Min
Typical
2.7
32
> 15
> 10
42.5
> 50
-0.05
-0.005
- 2 of 13 -
Max
Units
3.7
GHz
dB
dB
dB
dBm
%
dB/°C
dBm/°C
Disclaimer: Subject to change without notice
www.triquint.com
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Thermal Resistance (θJC)
Units
3.65
°C/W
°C
153
°C
1.26E+9
Hrs
(1)
TBASE = 85°C, VD = 28 V Pulse
PW = 100 us, DC = 10 %
Channel Temperature (TCH) (Under RF drive) At Freq = 3 GHz, PIN = 18 dBm:
IDQ = 225 mA, ID_Drive = 1330 mA
POUT = 42.7 dBm
PDISS = 18.6 W
Median Lifetime (TM)
Notes:
1.
Value
Thermal resistance measured to back of package.
Test Conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX
Median Lifetime vs. Channel Temperature
Median Lifetime, TM (Hours)
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
1E+04
FET13
25
50
75
100 125 150 175 200 225 250 275
Channel Temperature, TCH (°C)
Thermal Resistance vs. PDISS
5.4
TBASE = 85
5.2
Pulsed VD = 28 V, IDQ = 225 mA, PIN = 18 dBm,
PW = 100 us, DC = 10%
24
23
4.8
22
4.4
4.2
4.0
3.8
Pulse: 100us 10%
Pulse: 100us 20%
Pulse: 300us 10%
Pulse: 300us 10%
CW
3.6
3.4
3.2
3.0
Power Dissipation (W)
5.0
4.6
RJC (C/W)
PDISS vs. Frequency vs. TBASE
25
0C
21
20
19
18
17
16
+85°C
15
+25°C
14
−40°C
13
16
17
18
19 20 21 22
23
24
25
26
27 28 29
2.3
PDISS (W)
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
Frequency (GHz)
- 3 of 13 -
Disclaimer: Subject to change without notice
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TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Typical Performance: Small Signal
Condition: CW
40
38
36
36
34
34
32
32
30
25 V
28
28 V
26
30 V
24
Gain vs. Frequency vs. Temperature
40
Temp. = +25 °C
S21 (dB)
S21 (dB)
38
Gain vs. Frequency vs. VD
IDQ = 225 mA
30
28
+85°C
26
+25°C
24
−40°C
22
22
20
20
18
18
16
VD = 28 V, IDQ = 225 mA
16
2.1
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
2.1
2.3
2.5
2.7
Frequency (GHz)
Input Return Loss vs. Frequency vs. VD
0
IDQ = 225 mA
-3
Temp. = +25 °C
-3
30 V
S11 (dB)
S11 (dB)
28 V
-12
-15
-18
+25°C
-12
−40°C
3.7
3.9
4.1
-15
-18
-21
-24
-24
-27
-27
-30
-30
2.1
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
2.1
2.3
2.5
2.7
Frequency (GHz)
Output Return Loss vs. Frequency vs. VD
IDQ = 225 mA
3.3
3.5
3.7
3.9
4.1
VD = 28 V, IDQ = 225 mA
-3
-6
-6
-9
-9
-12
-12
-15
25 V
28 V
-21
3.1
Output Return Loss vs. Freq. vs. Temperature
0
Temp. = +25 °C
-18
2.9
Frequency (GHz)
S22 (dB)
S22 (dB)
3.5
+85°C
-9
-21
-3
3.3
VD = 28 V, IDQ = 225 mA
-6
25 V
-9
3.1
Input Return Loss vs. Freq. vs. Temperature
0
-6
0
2.9
Frequency (GHz)
-15
+85°C
-18
+25°C
-21
30 V
-24
-24
-27
-27
-30
−40°C
-30
2.1
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
2.1
Frequency (GHz)
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
Frequency (GHz)
- 4 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Typical Performance: Large Signal
Condition: Pulsed VD, Pulse Width = 100 us, Duty Cycle = 10%
45
44
Output Power vs. Frequency vs. VD
45
IDQ = 225 mA, PIN = 18 dBm
44
43
Output Power (dBm)
Output Power (dBm)
43
Output Power vs. Frequency vs. IDQ
VD = 28 V, PIN = 18 dBm
42
41
25 V
40
28 V
39
32 V
38
42
41
40
225 mA
39
450 mA
38
37
37
36
36
35
35
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
2.3
2.5
2.7
2.9
Frequency (GHz)
3.1
3.3
3.5
3.7
3.9
4.1
Frequency (GHz)
Output Power vs. Input Power vs. Freq.
46
Temp. = +25 °C
VD = 28 V, IDQ = 225 mA
44
Output Power (dBm)
42
40
38
36
34
32
30
2.7 GHz
28
3.1 GHz
26
3.5 GHz
24
22
-10 -8 -6 -4 -2 0
2
4
6
8 10 12 14 16 18 20 22
Input Power (dBm)
Output Power vs. Frequency vs. Temp.
45
44
46
VD = 28 V, IDQ = 225 mA, PIN = 18 dBm
44
42
Output Power (dBm)
43
Output Power (dBm)
Output Power vs. Input Power vs. Temp.
VD = 28 V, IDQ = 225 mA, 3.1 GHz
42
41
+85°C
40
+25°C
−40°C
39
38
37
40
38
36
34
32
+85°C
30
+25°C
28
−40°C
26
36
24
35
22
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
-10 -8 -6 -4 -2 0
4.1
Frequency (GHz)
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
2
4
6
8 10 12 14 16 18 20 22
Input Power (dBm)
- 5 of 13 -
Disclaimer: Subject to change without notice
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TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Typical Performance: Large Signal
Condition: Pulsed VD, Pulse Width = 100 us, Duty Cycle = 10%
PAE vs. Frequency vs. VD
65
VD = 28 V, PIN = 18 dBm
60
Power-Added Efficiency (%)
60
Power-Added Efficiency (%)
PAE vs. Frequency vs. IDQ
65
IDQ = 225 mA, PIN = 18 dBm
55
50
45
25 V
40
28 V
35
32 V
30
25
55
50
45
225 mA
40
450 mA
35
30
25
20
20
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
2.3
2.5
2.7
2.9
Frequency (GHz)
Power-Added Efficiency (%)
55
PAE vs. Input Power vs. Freq.
VD = 28 V, IDQ = 225 mA
Temp. = +25 °C
45
40
35
2.7 GHz
30
3.1 GHz
25
3.5 GHz
20
15
10
3.9
4.1
3.9
4.1
55
50
45
+85°C
40
+25°C
−40°C
35
30
25
0
20
-10 -8 -6 -4 -2 0
2
4
6
8 10 12 14 16 18 20 22
2.3
2.5
2.7
2.9
Input Power (dBm)
Power Gain vs. Input Power vs. Freq.
40
Temp. = +25 °C
VD = 28 V, IDQ = 225 mA
3.1
3.3
3.5
3.7
Frequency (GHz)
38
36
36
34
34
Power Gain vs. Input Power vs. Temp.
VD = 28 V, IDQ = 225 mA, 3.1 GHz
32
30
2.7 GHz
28
3.1 GHz
26
3.5 GHz
Gain (dB)
32
Gain (dB)
3.7
VD = 28 V, IDQ = 225 mA, PIN = 18 dBm
5
38
3.5
60
50
40
3.3
PAE vs. Frequency vs. Temp.
65
Power-Added Efficiency (%)
60
3.1
Frequency (GHz)
30
28
24
24
22
22
20
20
18
18
16
+85°C
26
+25°C
−40°C
16
-10 -8 -6 -4 -2 0
2
4
6
8 10 12 14 16 18 20 22
-10 -8 -6 -4 -2 0
Input Power (dBm)
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
2
4
6
8 10 12 14 16 18 20 22
Input Power (dBm)
- 6 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Typical Performance: Large Signal
Condition: Pulsed VD, Pulse Width = 100 us, Duty Cycle = 10%
Drain Current vs. Frequency vs. VD
1.8
4.0
3.5
1.4
3.0
Gate Current (mA)
Drain Current (A)
IDQ = 225 mA, PIN = 18 dBm
1.6
1.2
25 V
1.0
28 V
0.8
32 V
0.6
0.4
Gate Current vs. Frequency vs. VD
IDQ = 225 mA, PIN = 18 dBm
2.5
2.0
25 V
1.5
28 V
32 V
1.0
0.5
0.0
0.2
-0.5
0.0
-1.0
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
2.3
2.5
2.7
2.9
Frequency (GHz)
Drain Current vs. Input Power vs. Freq.
VD = 28 V, IDQ = 225 mA
Temp. = +25 °C
1.6
3.5
1.4
3.0
1.2
1.0
0.8
2.7 GHz
3.1 GHz
0.6
3.5 GHz
0.4
3.5
3.7
3.9
4.1
Temp. = +25 °C
VD = 28 V, IDQ = 225 mA
2.5
2.7 GHz
2.0
3.1 GHz
1.5
3.5 GHz
1.0
0.5
0.0
0.2
-0.5
0.0
-1.0
-10 -8 -6 -4 -2 0
2
4
6
8 10 12 14 16 18 20 22
-10 -8 -6 -4 -2 0
Input Power (dBm)
3.5
1.4
3.0
Gate Current (mA)
1.6
1.2
1.0
+85°C
+25°C
−40°C
0.6
4
6
8 10 12 14 16 18 20 22
Gate Current vs. Frequency vs. Temp.
4.0
VD = 28 V, IDQ = 225 mA, PIN = 18 dBm
0.8
2
Input Power (dBm)
Drain Current vs. Frequency vs. Temp.
1.8
Drain Current (A)
3.3
Gate Current vs. Input Power vs. Freq.
4.0
Gate Current (mA)
Drain Current (A)
1.8
3.1
Frequency (GHz)
+85°C
+25°C
−40°C
2.5
2.0
1.5
1.0
0.5
0.4
0.0
0.2
-0.5
0.0
VD = 28 V, IDQ = 225 mA, PIN = 18 dBm
-1.0
2.3
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
2.3
Frequency (GHz)
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
2.5
2.7
2.9
3.1
3.3
3.5
3.7
3.9
4.1
Frequency (GHz)
- 7 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Applications Information
32
31
30
29
28
27
26
25
1
24
2
23
3
22
4
21
5
20
6
19
7
18
8
17
RF OUT
9
10
11
12
13
14
15
RF IN
16
VD
VG
R1 (1)
15 Ohm
C1 (1)
0.01 uF
C2
R2
0.01 uF
15 Ohm
C3 (1)
C4
1 uF
1 uF
Notes:
1. Remove if pulsing on drain
Bias-up Procedure
Bias-down Procedure
1. Set ID limit to 1.53 A, IG limit to 8 mA
2. Apply −5 V to VG
3. Apply +28 V to VD; ensure IDQ is approx. 0 mA
4. Adjust VG until IDQ = 225 mA (VG ~ −2.5 V Typ.).
5. Turn on RF supply
1. Turn off RF supply
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA
3. Set VD to 0 V
4. Turn off VD supply
5. Turn off VG supply
- 8 of 13 -
Disclaimer: Subject to change without notice
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TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Pin Layout
Pin Description
Pin No.
Symbol
Description
1, 3-4, 6, 8-9, 13, 16-17, 19, 21, 23-25, 32
GND
Connected to ground paddle (pin 33); must be grounded
on PCB
3
RF OUT
Output; matched to 50 Ω; DC blocked
5, 7, 10-11, 15, 18, 20, 26-31
NC
No connection
12
DRAIN
Drain voltage; bias network is required; see recommended
Application Information on page 8
14
GATE
Gate voltage; bias network is required; see recommended
Application Information on page 8
22
RF IN
Input; matched to 50 Ω; DC blocked
33
GND
Ground Paddle. Multiple vias should be employed to
minimize inductance and thermal resistance.
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
- 9 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Evaluation Board
Bill of Material
Reference Des.
Value
Description
Manuf.
C1, C2
0.01 μF
Cap, 0402, 50 V, 10%, X7R
Various
C3, C4
1 μF
Cap, 0805, 50 V, 10%, X7R
Various
R1, R2
15 Ohm
Res, 0402, 5%
Various
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
- 10 of 13 -
Part Number
Disclaimer: Subject to change without notice
www.triquint.com
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Mechanical Information
Units: inches
Tolerances: unless specified
x.xx = ± 0.01
x.xxx = ± 0.005
Materials:
Base: Ceramic
Lid: Plastic
All metalized features are gold plated
Part is epoxy sealed
Marking:
2583: Part number
YY: Part Assembly year
WW: Part Assembly week
MXXX: Batch ID
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
- 11 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Recommended Soldering Temperature Profile
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
- 12 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com
TGA2585-SM
2.7 to 3.7GHz, 18W GaN Power Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Caution! ESD-Sensitive Device
Compatible with the latest version of J-STD-020, Leadfree solder, 260°C
RoHS Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating: TBD
Value:
TBD
Test:
Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
MSL Rating
• Antimony Free
• TBBP-A (C15H12Br402) Free
Level TBD at TBD°C convection reflow
• PFOS Free
The part is rated Moisture Sensitivity Level TBD at TBD°C
• SVHC Free
per JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce: 3A001.b.2.a
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
For technical questions and application information:
+1.972.994.8465
+1.972.994.8504
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Preliminary Datasheet: Rev- 03-25-14
© 2014 TriQuint
- 13 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com