TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Applications • Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 - 3.7 GHz PSAT: 42.5 dBm PAE: > 50 % Small Signal Gain: 32 dB Return Loss: > 10 dB Bias: VD = 28 V (CW or Pulsed), IDQ = 225 mA, VG = −2.5 V Typical • Package Dimensions: 5.0 x 5.0 x 1.45 mm • • • • • • 32 30 29 28 27 26 25 1 24 2 23 RF OUT 3 22 4 21 5 20 6 19 7 18 8 17 9 General Description 31 10 11 12 13 14 15 RF IN 16 Pin Configuration TriQuint’s TGA2585-SM is a packaged MMIC power amplifier which operates from 2.7 to 3.7 GHz. The TGA2585-SM is designed using TriQuint’s production 0.25-μm GaN on SiC process. The TGA2585-SM typically provides 42.5 dBm of saturated output power, > 50% power-added efficiency, and 32 dB small signal gain. It can operate under both pulse and CW conditions. Pad No. Symbol 1, 3-4, 6, 8-9, 13, 16-17, 19, 21, 23-25, 32 GND 3 5, 7, 10-11, 15, 18, 20, 26-31 12 14 22 RF OUT NC DRAIN GATE RF IN The TGA2585-SM is available in a low-cost, surface mount 32 lead 5x5 AIN QFN. It is ideally suited to support both commercial and defense related radar applications. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 ohms. Ordering Information Lead-free and RoHS compliant Part ECCN Description TGA2585-SM 3A001.b.2.a 2.7 - 3.7 GHz, 18 W GaN Power Amplifier Evaluation Boards are available upon request. Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint - 1 of 13 - Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85°C Input Power (PIN), CW, 50 Ω, 85°C Input Power (PIN), CW, VSWR 10:1, VD = 28 V, 85°C Channel Temperature (TCH) Mounting Temperature (30 Seconds) Storage Temperature Value 40 V −8 to 0 V 1530 mA −7 to 11.5 mA 35 W 30 dBm Value Drain Voltage (VD) Drain Current (IDQ) Drain Current Under RF Drive (ID_DRIVE) Gate Voltage (VG) Gate Current Under RF Drive (IG_DRIVE) 28 V 225 mA See plots p. 7 −2.5 V (Typ.) See plots p. 7 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 23 dBm 275°C 260°C −55 to 150°C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 °C, VD = 28 V, IDQ = 225 mA, VG = −2.5 V Typ, Pulsed VD: PW = 100 us, DC = 10 % Parameter Operational Frequency Range Small Signal Gain Input Return Loss Output Return Loss Output Power at Saturation (PIN = 18 dBm) Power-Added Efficiency (PIN = 18 dBm) Gain Temperature Coefficient Power Temperature Coefficient Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint Min Typical 2.7 32 > 15 > 10 42.5 > 50 -0.05 -0.005 - 2 of 13 - Max Units 3.7 GHz dB dB dB dBm % dB/°C dBm/°C Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Thermal and Reliability Information Parameter Test Conditions Thermal Resistance (θJC) Units 3.65 °C/W °C 153 °C 1.26E+9 Hrs (1) TBASE = 85°C, VD = 28 V Pulse PW = 100 us, DC = 10 % Channel Temperature (TCH) (Under RF drive) At Freq = 3 GHz, PIN = 18 dBm: IDQ = 225 mA, ID_Drive = 1330 mA POUT = 42.7 dBm PDISS = 18.6 W Median Lifetime (TM) Notes: 1. Value Thermal resistance measured to back of package. Test Conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX Median Lifetime vs. Channel Temperature Median Lifetime, TM (Hours) 1E+18 1E+17 1E+16 1E+15 1E+14 1E+13 1E+12 1E+11 1E+10 1E+09 1E+08 1E+07 1E+06 1E+05 1E+04 FET13 25 50 75 100 125 150 175 200 225 250 275 Channel Temperature, TCH (°C) Thermal Resistance vs. PDISS 5.4 TBASE = 85 5.2 Pulsed VD = 28 V, IDQ = 225 mA, PIN = 18 dBm, PW = 100 us, DC = 10% 24 23 4.8 22 4.4 4.2 4.0 3.8 Pulse: 100us 10% Pulse: 100us 20% Pulse: 300us 10% Pulse: 300us 10% CW 3.6 3.4 3.2 3.0 Power Dissipation (W) 5.0 4.6 RJC (C/W) PDISS vs. Frequency vs. TBASE 25 0C 21 20 19 18 17 16 +85°C 15 +25°C 14 −40°C 13 16 17 18 19 20 21 22 23 24 25 26 27 28 29 2.3 PDISS (W) Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 Frequency (GHz) - 3 of 13 - Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Typical Performance: Small Signal Condition: CW 40 38 36 36 34 34 32 32 30 25 V 28 28 V 26 30 V 24 Gain vs. Frequency vs. Temperature 40 Temp. = +25 °C S21 (dB) S21 (dB) 38 Gain vs. Frequency vs. VD IDQ = 225 mA 30 28 +85°C 26 +25°C 24 −40°C 22 22 20 20 18 18 16 VD = 28 V, IDQ = 225 mA 16 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 2.1 2.3 2.5 2.7 Frequency (GHz) Input Return Loss vs. Frequency vs. VD 0 IDQ = 225 mA -3 Temp. = +25 °C -3 30 V S11 (dB) S11 (dB) 28 V -12 -15 -18 +25°C -12 −40°C 3.7 3.9 4.1 -15 -18 -21 -24 -24 -27 -27 -30 -30 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 2.1 2.3 2.5 2.7 Frequency (GHz) Output Return Loss vs. Frequency vs. VD IDQ = 225 mA 3.3 3.5 3.7 3.9 4.1 VD = 28 V, IDQ = 225 mA -3 -6 -6 -9 -9 -12 -12 -15 25 V 28 V -21 3.1 Output Return Loss vs. Freq. vs. Temperature 0 Temp. = +25 °C -18 2.9 Frequency (GHz) S22 (dB) S22 (dB) 3.5 +85°C -9 -21 -3 3.3 VD = 28 V, IDQ = 225 mA -6 25 V -9 3.1 Input Return Loss vs. Freq. vs. Temperature 0 -6 0 2.9 Frequency (GHz) -15 +85°C -18 +25°C -21 30 V -24 -24 -27 -27 -30 −40°C -30 2.1 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 2.1 Frequency (GHz) Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 Frequency (GHz) - 4 of 13 - Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Typical Performance: Large Signal Condition: Pulsed VD, Pulse Width = 100 us, Duty Cycle = 10% 45 44 Output Power vs. Frequency vs. VD 45 IDQ = 225 mA, PIN = 18 dBm 44 43 Output Power (dBm) Output Power (dBm) 43 Output Power vs. Frequency vs. IDQ VD = 28 V, PIN = 18 dBm 42 41 25 V 40 28 V 39 32 V 38 42 41 40 225 mA 39 450 mA 38 37 37 36 36 35 35 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 2.3 2.5 2.7 2.9 Frequency (GHz) 3.1 3.3 3.5 3.7 3.9 4.1 Frequency (GHz) Output Power vs. Input Power vs. Freq. 46 Temp. = +25 °C VD = 28 V, IDQ = 225 mA 44 Output Power (dBm) 42 40 38 36 34 32 30 2.7 GHz 28 3.1 GHz 26 3.5 GHz 24 22 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) Output Power vs. Frequency vs. Temp. 45 44 46 VD = 28 V, IDQ = 225 mA, PIN = 18 dBm 44 42 Output Power (dBm) 43 Output Power (dBm) Output Power vs. Input Power vs. Temp. VD = 28 V, IDQ = 225 mA, 3.1 GHz 42 41 +85°C 40 +25°C −40°C 39 38 37 40 38 36 34 32 +85°C 30 +25°C 28 −40°C 26 36 24 35 22 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 -10 -8 -6 -4 -2 0 4.1 Frequency (GHz) Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) - 5 of 13 - Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Typical Performance: Large Signal Condition: Pulsed VD, Pulse Width = 100 us, Duty Cycle = 10% PAE vs. Frequency vs. VD 65 VD = 28 V, PIN = 18 dBm 60 Power-Added Efficiency (%) 60 Power-Added Efficiency (%) PAE vs. Frequency vs. IDQ 65 IDQ = 225 mA, PIN = 18 dBm 55 50 45 25 V 40 28 V 35 32 V 30 25 55 50 45 225 mA 40 450 mA 35 30 25 20 20 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 2.3 2.5 2.7 2.9 Frequency (GHz) Power-Added Efficiency (%) 55 PAE vs. Input Power vs. Freq. VD = 28 V, IDQ = 225 mA Temp. = +25 °C 45 40 35 2.7 GHz 30 3.1 GHz 25 3.5 GHz 20 15 10 3.9 4.1 3.9 4.1 55 50 45 +85°C 40 +25°C −40°C 35 30 25 0 20 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 2.3 2.5 2.7 2.9 Input Power (dBm) Power Gain vs. Input Power vs. Freq. 40 Temp. = +25 °C VD = 28 V, IDQ = 225 mA 3.1 3.3 3.5 3.7 Frequency (GHz) 38 36 36 34 34 Power Gain vs. Input Power vs. Temp. VD = 28 V, IDQ = 225 mA, 3.1 GHz 32 30 2.7 GHz 28 3.1 GHz 26 3.5 GHz Gain (dB) 32 Gain (dB) 3.7 VD = 28 V, IDQ = 225 mA, PIN = 18 dBm 5 38 3.5 60 50 40 3.3 PAE vs. Frequency vs. Temp. 65 Power-Added Efficiency (%) 60 3.1 Frequency (GHz) 30 28 24 24 22 22 20 20 18 18 16 +85°C 26 +25°C −40°C 16 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 -10 -8 -6 -4 -2 0 Input Power (dBm) Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint 2 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) - 6 of 13 - Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Typical Performance: Large Signal Condition: Pulsed VD, Pulse Width = 100 us, Duty Cycle = 10% Drain Current vs. Frequency vs. VD 1.8 4.0 3.5 1.4 3.0 Gate Current (mA) Drain Current (A) IDQ = 225 mA, PIN = 18 dBm 1.6 1.2 25 V 1.0 28 V 0.8 32 V 0.6 0.4 Gate Current vs. Frequency vs. VD IDQ = 225 mA, PIN = 18 dBm 2.5 2.0 25 V 1.5 28 V 32 V 1.0 0.5 0.0 0.2 -0.5 0.0 -1.0 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 2.3 2.5 2.7 2.9 Frequency (GHz) Drain Current vs. Input Power vs. Freq. VD = 28 V, IDQ = 225 mA Temp. = +25 °C 1.6 3.5 1.4 3.0 1.2 1.0 0.8 2.7 GHz 3.1 GHz 0.6 3.5 GHz 0.4 3.5 3.7 3.9 4.1 Temp. = +25 °C VD = 28 V, IDQ = 225 mA 2.5 2.7 GHz 2.0 3.1 GHz 1.5 3.5 GHz 1.0 0.5 0.0 0.2 -0.5 0.0 -1.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 -10 -8 -6 -4 -2 0 Input Power (dBm) 3.5 1.4 3.0 Gate Current (mA) 1.6 1.2 1.0 +85°C +25°C −40°C 0.6 4 6 8 10 12 14 16 18 20 22 Gate Current vs. Frequency vs. Temp. 4.0 VD = 28 V, IDQ = 225 mA, PIN = 18 dBm 0.8 2 Input Power (dBm) Drain Current vs. Frequency vs. Temp. 1.8 Drain Current (A) 3.3 Gate Current vs. Input Power vs. Freq. 4.0 Gate Current (mA) Drain Current (A) 1.8 3.1 Frequency (GHz) +85°C +25°C −40°C 2.5 2.0 1.5 1.0 0.5 0.4 0.0 0.2 -0.5 0.0 VD = 28 V, IDQ = 225 mA, PIN = 18 dBm -1.0 2.3 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 2.3 Frequency (GHz) Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint 2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 Frequency (GHz) - 7 of 13 - Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Applications Information 32 31 30 29 28 27 26 25 1 24 2 23 3 22 4 21 5 20 6 19 7 18 8 17 RF OUT 9 10 11 12 13 14 15 RF IN 16 VD VG R1 (1) 15 Ohm C1 (1) 0.01 uF C2 R2 0.01 uF 15 Ohm C3 (1) C4 1 uF 1 uF Notes: 1. Remove if pulsing on drain Bias-up Procedure Bias-down Procedure 1. Set ID limit to 1.53 A, IG limit to 8 mA 2. Apply −5 V to VG 3. Apply +28 V to VD; ensure IDQ is approx. 0 mA 4. Adjust VG until IDQ = 225 mA (VG ~ −2.5 V Typ.). 5. Turn on RF supply 1. Turn off RF supply Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint 2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA 3. Set VD to 0 V 4. Turn off VD supply 5. Turn off VG supply - 8 of 13 - Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Pin Layout Pin Description Pin No. Symbol Description 1, 3-4, 6, 8-9, 13, 16-17, 19, 21, 23-25, 32 GND Connected to ground paddle (pin 33); must be grounded on PCB 3 RF OUT Output; matched to 50 Ω; DC blocked 5, 7, 10-11, 15, 18, 20, 26-31 NC No connection 12 DRAIN Drain voltage; bias network is required; see recommended Application Information on page 8 14 GATE Gate voltage; bias network is required; see recommended Application Information on page 8 22 RF IN Input; matched to 50 Ω; DC blocked 33 GND Ground Paddle. Multiple vias should be employed to minimize inductance and thermal resistance. Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint - 9 of 13 - Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Evaluation Board Bill of Material Reference Des. Value Description Manuf. C1, C2 0.01 μF Cap, 0402, 50 V, 10%, X7R Various C3, C4 1 μF Cap, 0805, 50 V, 10%, X7R Various R1, R2 15 Ohm Res, 0402, 5% Various Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint - 10 of 13 - Part Number Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Mechanical Information Units: inches Tolerances: unless specified x.xx = ± 0.01 x.xxx = ± 0.005 Materials: Base: Ceramic Lid: Plastic All metalized features are gold plated Part is epoxy sealed Marking: 2583: Part number YY: Part Assembly year WW: Part Assembly week MXXX: Batch ID Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint - 11 of 13 - Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Recommended Soldering Temperature Profile Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint - 12 of 13 - Disclaimer: Subject to change without notice www.triquint.com TGA2585-SM 2.7 to 3.7GHz, 18W GaN Power Amplifier Product Compliance Information ESD Sensitivity Ratings Solderability Caution! ESD-Sensitive Device Compatible with the latest version of J-STD-020, Leadfree solder, 260°C RoHS Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). ESD Rating: TBD Value: TBD Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) MSL Rating • Antimony Free • TBBP-A (C15H12Br402) Free Level TBD at TBD°C convection reflow • PFOS Free The part is rated Moisture Sensitivity Level TBD at TBD°C • SVHC Free per JEDEC standard IPC/JEDEC J-STD-020. ECCN US Department of Commerce: 3A001.b.2.a Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@triquint.com Tel: Fax: For technical questions and application information: +1.972.994.8465 +1.972.994.8504 Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Datasheet: Rev- 03-25-14 © 2014 TriQuint - 13 of 13 - Disclaimer: Subject to change without notice www.triquint.com