TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Applications
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•
•
•
Communications
Electronic Warfare
Test Instrumentation
EMC Amplifier
Product Features
•
•
•
•
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Functional Block Diagram
Frequency Range: 2.5 – 6 GHz
Psat: 45.5 dBm @ Pin = 26 dBm
PAE: 35 %
Small Signal Gain: 26 dB
Bias: Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V Typical
Dimensions: 11.4 x 17.3 x 3.0 mm
General Description
1
10
2
9
3
8
4
7
5
6
Pin out Configuration
TriQuint’s TGA2576-FL is a packaged wideband power
amplifier fabricated on TriQuint’s production-released
0.25um GaN on SiC process. Operating from 2.5 GHz
to 6 GHz, it achieves 45.5 dBm saturated output power,
35% PAE and 26 dB small signal gain.
Fully matched to 50 ohms and with integrated DC
blocking caps on both I/O ports, the TGA2576-FL is
ideally suited to support both commercial and defense
related opportunities.
Pin #
Symbol
1,5
2,4,7,9
3
6
8
10
Vg
NC
RF In
Vd Bot
RF Out
Vd Top
Ordering Information
Part No.
TGA2576-FL
Preliminary Data Sheet: Rev A
08/25/11
© 2011 TriQuint Semiconductor, Inc.
- 1 of 11 -
ECCN
Description
3A001.b.2.a
2.5-6 GHz Power Amplifier
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Drain to Gate Voltage, Vd - Vg
Drain Voltage,Vd
Gate Voltage,Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, 50Ω,T = 25ºC
Channel Temperature, Tch
Mounting Temperature
(30 Seconds)
Storage Temperature
80 V
40 V
-10 to 0 V
4500 mA
-18 to 50 mA
84 W
28 dBm
275 oC
Vd
Idq
Id_drive (Under RF
Drive)
Vg
260 oC
Min
Typical
Max Units
30
1550
V
mA
2500 - 3500
-3.3
4000
mA
V
Electrical specifications are measured at specified test
conditions.
Specifications are not guaranteed over all recommended
operating conditions.
-40 to 150 oC
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the
device at these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC, Vd = 30 V, Idq = 1550 mA, Vg = -3.3 V Typical.
Parameter
Min
Operational Frequency Range
Small Signal Gain
Output Power @ Saturation
Power-added efficiency
Gain Temperature Coefficient
Power Temperature Coefficient
Preliminary Data Sheet: Rev A
Typical
2.5
26
45.5
35
- 0.04
- 0.02
08/25/11
© 2011 TriQuint Semiconductor, Inc.
- 2 of 11 -
Max
Units
6
GHz
dB
dBm
%
dB/°C
dBm/°C
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Specifications (cont.)
Thermal and Reliability Information
Parameter
Condition
Rating
Thermal Resistance, θJC, measured to back of package
Tbase = 85 °C
Tbase = 85 °C, Vd = 30 V, Idq =
1550 mA, Pdiss = 46.5 W
Tbase = 85 °C, Vd = 30 V, Id =
3000 mA, Pout = 44 dBm, Pdiss =
64.9 W
θJC = 1.47 °C/W
Tch = 153 °C
Tm = 5.5 E+7 Hours
Tch = 180 °C
Tm = 6.3 E+6 Hours
Channel Temperature (Tch), and Median Lifetime (Tm)
Channel Temperature (Tch), and Median Lifetime (Tm)
Under RF Drive
Note: Thermal model to backside of package
Median Lifetime (Tm) vs. Channel Temperature (Tch)
Median Lifetime, Tm (Hours)
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
FET7
1E+04
25
50
75
100
125
150
175
200
225
250
275
Channel Temperature, Tch (°C)
Preliminary Data Sheet: Rev A
08/25/11
© 2011 TriQuint Semiconductor, Inc.
- 3 of 11 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Typical Performance
Gain vs. Frequency
Return Loss vs. Frequency
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V
35
IRL and ORL (dB)
30
25
Gain (dB)
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V, 25 °C
0
20
25 °C
15
10
5
10
15
IRL
20
5
ORL
0
25
2
2.5
3
3.5
4
4.5
5
5.5
6
2
2.5
3
3.5 4 4.5 5 5.5
Frequency (GHz)
Frequency (GHz)
Pin = 26 dBm
4
48
47
46
45
44
3
2
1
43
0
42
2
2.5
3
3.5
4
4.5
5
5.5
2
6
2.5
3
4.5
5
5.5
6
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V, 25 °C
46
Pin = 26 dBm
Pin = 26 dBm
Output Pout (dBm)
60
4
Output Pout vs. Input Power vs. Frequency
PAE vs. Frequency
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V, 25 °C
70
3.5
Frequency (GHz)
Frequency (GHz)
50
PAE (%)
7
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V, 25 oC
5
Pin = 26 dBm
49
6.5
Drain Current vs. Frequency
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V, 25 °C
Id (A)
Saturated Output Power (dBm)
Saturated Output Power vs. Frequency
50
6
40
30
20
10
0
44
42
2.5 GHz
4.0 GHz
6.0 GHz
40
38
36
2
2.5
3
3.5
4
4.5
5
5.5
10
6
Frequency (GHz)
Preliminary Data Sheet: Rev A
08/25/11
© 2011 TriQuint Semiconductor, Inc.
12
14
16
18
20
22
24
26
28
Input Power (dBm)
- 4 of 11 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Typical Performance (cont.)
Current vs. Frequency vs. Temperature
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V
5
Pin = 26 dBm
Pin = 26 dBm
4
Id (A)
Saturated Output Power (dBm)
Power vs. Frequency vs. Temperature
50
49
48
47
46
45
44
43
42
41
40
3
2
25 °C
25 °C
1
85 °C
85 °C
0
2
2.5
3
3.5
4
4.5
5
5.5
6
2
2.5
3
Frequency (GHz)
PAE vs. Frequency vs. Temperature
6
25
Gain (dB)
PAE (%)
5.5
Pin = 10 dBm
30
40
30
20
25 °C
15
20
85 C
10
10
25 C
5
0
85 °C
0
2
2.5
3
3.5
4
4.5
5
5.5
6
2
Frequency (GHz)
2.5
3
3.5
4
4.5
5
5.5
6
Frequency (GHz)
IM3 vs. Pout/Tone vs. Frequency
IM3 vs. Pout/Tone vs. Frequency
Vd =IM3
30 V,vs.
Idq Pout/Tone
= 1.55 A, Vg = vs.
-3.3 V
Typical, +25 0C
Frequency
Vd =IM3
30 V,vs.
Idq =Pout/Tone
1.55 A, Vg = vs.
-3.3 V
Typical, +85 0C
Frequency
-20
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V Typical, +25 0C
55
55
-25
50
-25
50
45
-30
IM3 (dBc)
IM3 (dBc)
IM3 (dBc)
IM3 (dBc)
5
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V
50
-20
4.5
35
Pin = 26 dBm
60
4
Gain vs. Frequency vs. Temperature
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V
70
3.5
Frequency (GHz)
2.5GHz
4GHz
5GHz
2.5GHz6GHz
40
-35
35
30
-40
4GHz
5GHz
6GHz
25
-45
20
Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V Typical, +85 0C
45
-30
2.5GHz
4GHz
5GHz
2.5GHz
6GHz
40
-35
35
30
-40
4GHz
5GHz
6GHz
25
-45
20
-50
15
-50
15
24 26
26 28
28 30
30 32
24
34
36
38
40
42
44
24
24 26
26 28
28 30
30 32
32 34
34 36
36 38
38
Pout/Tone (dBm)
(dBm)
Pout/Tone
Preliminary Data Sheet: Rev A
08/25/11
© 2011 TriQuint Semiconductor, Inc.
40
42
44
Pout/Tone
Pout/Tone(dBm)
(dBm)
- 5 of 11 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Application Circuit
Vg
C6
1uF
C8
0.1uF
1uF
1
10
2
9
C2
0.1uF
3
RF IN
Vg
C4
TGA2576-FL
Vd
8
RF OUT
7
4
5
C5
1uF
C1
0.1uF
6
C3
0.1uF
C7
1uF
Vg can be biased from either side (pins 1 or 5).
Vd must be biased from both sides (pins 6 and 10).
Bias-up Procedure
Bias-down Procedure
Vg set to -5.0 V
Vd set to +30 V
Adjust Vg more positive until quiescent Id is 1400 mA.
This will be ~ Vg = -3.3 V typical
Apply RF signal
Turn off RF signal
Reduce Vg to -5.0 V. Ensure Id ~ 0 mA
Preliminary Data Sheet: Rev A
08/25/11
© 2011 TriQuint Semiconductor, Inc.
Set Vd to 0 V
Set Vg to 0 V
- 6 of 11 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Pin Description
1
10
2
9
3
8
4
7
5
6
Pin
Symbol
Description
3
1
10
8
6
5
2,4,7,9
RF In
Vg
Vd Top
RF Out
Vd Bot
Vg
N/C
(Package
Base)
Input, matched to 50 ohms.
Gate voltage. See Note 1.
Top Drain voltage. See Note 2.
Output, matched to 50 ohms.
Bottom Drain voltage. See Note 2.
Gate voltage. See Note 1.
No internal connection; may be grounded or left open on PCB
RF and DC ground
Notes:
1. Bias network is required; can be biased from either side (pin 1 or pin 5); see Application Circuit on page 6 as an
example.
2. Bias network is required; must be biased from both sides (pins 6 and 10); see Application Circuit on page 6 as an
example.
Preliminary Data Sheet: Rev A
08/25/11
© 2011 TriQuint Semiconductor, Inc.
- 7 of 11 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Evaluation Board Layout
Vg
C8 Vd
C6
C2
C4
C1
C3
Vg C5
C7 Vd
Bill of Material
Ref Des
Value
Description
C1- C4
C5-C8
0.1 uF
1 uF
Cap, 0603, 50V, 10%, X7R
Cap, 1206, 50V, 10%, X7R
Preliminary Data Sheet: Rev A
08/25/11
© 2011 TriQuint Semiconductor, Inc.
Manufacturer
- 8 of 11 -
Part Number
various
various
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Mechanical Information
Package Information and Dimensions
All dimensions are in millimeters.
1.27
8.89
4X Ø1.78
4.22
4.72
17.32
14.63
8.89
10X .254
4X 2.29
1.37
1.35
8.69
11.43
3.00 ± 0.25
4X 1.02
2.95
10X 2.54 `0.25
10X .127
1.07
Notes:
1.
2.
3.
4,
Preliminary Data Sheet: Rev A
Unless specified otherwise, dimensions are in millimeters
Unless specified otherwise, tolerance are +/- 0.127
Materials:
Package base:
Copper Tungsten (CuW) composite
Package lid:
LCP (liquid crystal polymer)
Package leads: Kovar, MIL I 23011C Class 1
Plating Finish: Gold (Au) 1.27um minimum over Nickel
(Ni) 2.54-8.89um
Part Marking:
YY
Part Assembly Year
WW
Part Assembly Week
MXXX
Batch ID
08/25/11
© 2011 TriQuint Semiconductor, Inc.
- 9 of 11 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Product Compliance Information
Solderability
ESD Information
ESD Rating:
Value:
Test:
Standard:
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
TBD
Passes ≥ TBD V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating
Level TBD at +260 °C convection reflow
The part is rated Moisture Sensitivity Level TBD at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce 3A001.b.2.a
Assembly Notes
1. 0-80 screws are recommended for mounting the TGA2576-FL.
2. We recommend attaching a heat sink to the base of the TGA2576-FL. Use a thermal
compound or 4 mils Indium shim between the heat sink and the TGA2576-FL base.
3. Apply solder to each pin of the TGA2576-FL.
Preliminary Data Sheet: Rev A
08/25/11
© 2011 TriQuint Semiconductor, Inc.
- 10 of 11 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
TGA2576-FL
2.5 to 6 GHz GaN HEMT Power Amplifier
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: info-sales@tqs.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Preliminary Data Sheet: Rev A
08/25/11
© 2011 TriQuint Semiconductor, Inc.
- 11 of 11 -
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®