Huajing Discrete Devices
Silicon
N-Channel
R
○
(Depletion Mode)
Power MOSFET
F501
Features：
VDSX
500
V
z N-Channel
IDSS,min
0.001
A
z Depletion Mode
RDS(ON),max
750
Ω
z dv/dt rated
z Available with Vgs(th) indicator on reel
z Pb-free lead plating;ROHS compliant
z Halogen Free
Ordering Information
TYPE
PACKAGE
Tape and Reel Information
F501
SOT-23
3000pcs/reel
F501
SOT-23
3000pcs/reel(sorted in Vgs(th) Bands)
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol
Parameter
VDSX
Drain-to-Source Voltage
Rating
Units
500
V
Continuous Drain Current
0.030
A
Continuous Drain Current TC =70 °C
0.024
A
Pulsed Drain Current
0.120
A
Gate-to-Source Voltage
±20
V
Peak Diode Recovery dv/dt
5.0
V/ns
PD
Power Dissipation
0.5
W
VESD(G-S)
Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
50
V
TJ，Tstg
Operating Junction and Storage Temperature Range
150，–55 to 150
℃
TL
MaximumTemperature for Soldering
300
℃
ID
IDM
a1
VGS
dv/dt
a2
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics
Symbol
Parameter
Test Conditions
VDSX
Drain to Source Breakdown Voltage
V GS =-5V, I D =250µA
ID(off)
Off-state Drain to Source Current
V DS =500V, V GS = -5V
Ta=25 °C
V DS =400V, V GS = -5V
Ta=125 °C
IGSS(F)
Gate to Source Forward Leakage
IGSS(R)
Gate to Source Reverse Leakage
Rating
Un
its
Min.
Typ.
Max.
500
--
--
--
--
0.1
µA
--
--
10
µA
V GS =+20V
--
--
100
nA
V GS =-20V
--
--
-100
nA
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V
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Huajing Discrete Devices
F501
R
○
ON Characteristics
Symbol
Parameter
Test Conditions
Idss
On-state drain current
VGS =0V, V DS =25V
RDS(ON)
Drain-to-Source On-Resistance
VGS(TH)
Gate Threshold Voltage
VGS =0V,I D =3mA
Rating
Min.
Max.
--2.7
Units
mA
1.0
VGS =10V,I D =16mA
VDS = 3V, I D =8.0µA
Typ.
350
750
360
850
-2.0
-1.0
Ω
V
Threshold Voltage Vgs(th) Sorted in Bands
J
K
L
Vgs(th)
VDS = 3V, I D =8.0µA
M
-1.0
-1.5
-1.5
-2.0
-2.0
-2.5
-2.5
-2.7
V
Dynamic Characteristics
Symbol
Parameter
Test Conditions
gfs
Forward Transconductance
VDS =50V, I D =0.01A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS =-5V V DS = 25V
f = 1.0MHz
Rating
Min.
Typ.
Max.
0.008
0.017
--
--
50
--
4.53
--
1.08
Units
S
pF
Resistive Switching Characteristics
Symbol
Parameter
td(ON)
Turn-on Delay Time
tr
Rise Time
td(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain (“Miller”)Charge
Test Conditions
I D =0.01A V DD =300V
V GS = -5…7V
RG =6.0Ω
I D =0.01A V DD =400V
V GS = -5V to 5V
Rating
Min.
Typ.
Max.
--
9.9
--
--
55.8
--
--
56.4
--
--
136
--
--
1.14
--
0.5
--
0.37
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Units
ns
nC
2 0 11
Huajing Discrete Devices
F501
R
○
Source-Drain Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Maximum Pulsed Current (Body Diode)
VSD
Diode Forward Voltage
trr
Test Conditions
Rating
Units
Min.
Typ.
Max.
--
--
0.025
A
--
--
0.100
A
I F =16mA,V GS =-5V
--
--
1.2
V
Reverse Recovery Time
I F =0.01A,Tj = 25°C
--
243
--
ns
Qrr
Reverse Recovery Charge
dI F /dt=100A/us,
V R =300V
--
636
--
nC
Symbol
Parameter
Typ.
Units
Rθ JA
Junction-to-Ambient
250
℃/W
a1
a2
Ta=25°C
：Repetitive rating; pulse width limited by maximum junction temperature
：I F =0.01A,di/dt ≤100A/us,VDD≤BVDS, Start TJ =25℃
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Huajing Discrete Devices
R
○
F501
Characteristics Curve：
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Huajing Discrete Devices
R
○
F501
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Huajing Discrete Devices
R
○
F501
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Huajing Discrete Devices
R
○
F501
Package Information：
项
目
规范(mm)
MIN
MAX
A
2.80
3.00
B
1.20
1.40
C
0.90
1.10
E
0.30
0.50
F
0.05
0.15
H
0.20
L
2.20
2.60
N
1.80
2.00
SOT-23 Package
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Huajing Discrete Devices
R
○
F501
The name and content of poisonous and harmful material in products
Part’s Name
Limit
Hazardous Substance
Pb
≤0.1%
Hg
Cd
≤0.1%
≤0.01%
Cr(VI)
≤0.1%
PBB
≤0.1%
PBDE
≤0.1%
Lead Frame
○
○
○
○
○
○
Molding Compound
○
○
○
○
○
○
Chip
○
○
○
○
○
○
Wire Bonding
○
○
○
○
○
○
Solder
○
○
○
○
○
○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
Note
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.
Warnings
1.
2.
3.
4.
Exceeding the maximun ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximun ratings of the device.
When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
VDMOSFETs is the device which is sensitive to the static electricity, it is necessory to protect
the device from being damaged by the static electricity when using it.
This publication is made by Huajing Microelectronics and subject to regular change without
notice.
Marketing Part：
http://www.wimtel.com
Tel: 0755-82389111
Fax: 0755-33065120
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