LND150
N-Channel Depletion-Mode
MOSFET
Ordering Information
Product marking for TO-243AA:
Order Number / Package
BVDSX /
BVDGX
RDS(ON)
(max)
IDSS
(min)
TO-92
TO-243AA*
Die
500V
1.0KΩ
1.0mA
LND150N3
LND150N8
LND150ND
LN1E
Where
= 2-week alpha date code
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.
Features
Advanced DMOS Technology
ESD gate protection
The LND1 is a high voltage N-channel depletion mode (normallyon) transistor utilizing Supertex’s lateral DMOS technology. The
gate is ESD protected.
Free from secondary breakdown
Low power drive requirement
The LND1 is ideal for high voltage applications in the areas of
normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low CISS
Package Options
Applications
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
S
Input protection circuits
G
S
D
TO-243AA
(SOT-89)
Absolute Maximum Ratings
Drain-to-Source Voltage
BVDSX
Drain-to-Gate Voltage
BVDGX
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
* Distance of 1.6 mm from case for 10 seconds.
SGD
TO-92
±20V
-55°C to +150°C
300°C
Note: See Package Outline section for dimensions.
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
1 refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products,
LND150
Thermal Characteristics
θjc
θja
Package
ID (continuous)*
ID (pulsed)
Power Dissipation
@TA = 25°C
°C/W
°C/W
TO-92
30mA
30mA
0.74W
125
30mA
†
TO-243AA
30mA
1.2W
15
IDR
IDRM*
170
30mA
30mA
†
30mA
30mA
78
* ID (continuous) is limited by max rated Tf.
† Mounted on FR4 Board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min
BVDSX
Drain-to-Source Breakdown Voltage
500
VGS(OFF)
Gate-to-Source OFF Voltage
-1.0
Typ
Max
Unit
Conditions
V
VGS = -10V, ID = 1.0mA
-3.0
V
VDS = 25V, ID = 100nA
∆VGS(OFF) Change in VGS(OFF) with Temperature
5.0
mV/°C
VDS = 25V, ID = 100nA
IGSS
Gate Body Leakage Current
100
nA
VGS = ±20V, VDS = 0V
ID(OFF)
Drain-to-Source Leakage Current
100
nA
VGS = -10V, VDS = 450V
100
µA
VGS = -10V, VDS = 0.8V max rating
TA =125°C
3.0
mA
VGS = 0V, VDS = 25V
1000
Ω
VGS = 0V, ID = 0.5mA
1.2
%/°C
VGS = 0V, ID = 0.5mA
Ω
VGS = 0V, ID = 1.0mA
IDSS
Saturated Drain-to-Source Current
1.0
RDS(ON)
Static Drain-to-Source ON-State Resistance
850
∆RDS(ON) Change in RDS(ON) with Temperature
GFS
Forward Transconductance
1.0
2.0
m
CISS
Input Capacitance
7.5
10
COSS
Output Capacitance
2.0
3.5
CRSS
Reverse Transfer Capacitance
0.5
1.0
td(ON)
Turn-ON Delay Time
0.09
tr
Rise Time
0.45
td(OFF)
Turn-OFF Delay Time
0.1
tf
Fall Time
1.3
VSD
Diode Forward Voltage Drop
trr
Reverse Recovery Time
pF
VGS = -10V, VDS = 25V
f = 1 MHz
µs
VDD = 25V, ID = 1.0mA,
RGEN = 25Ω
0.9
200
V
VGS = -10V, ISD = 1.0mA
ns
VGS = -10V, ISD = 1.0mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
VDD
RL
0V
90%
PULSE
GENERATOR
INPUT
-10V
10%
t(ON)
td(ON)
t(OFF)
tr
td(OFF)
OUTPUT
Rgen
tF
D.U.T.
VDD
10%
INPUT
10%
OUTPUT
0V
90%
90%
2
LND150
Typical Performance Curves
Output Characteristics
Saturation Characteristics
6
6
5
4
3
0.5V
2
0V
1
ID (milliamps)
ID (milliamps)
VGS = 1.0V
VGS =1.0V
5
4
3
0.5V
2
0V
1
-0.5V
-0.5V
-1.0V
0
-1.0V
0
0
250
500
0
1
2
3
4
5
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
10
2
VDS = 400V
TA = -55°C
TO-243AA
6
PD (watts)
GFS (millisiemens)
8
TA = 25°C
4
1
TO-92
TA = 125°C
2
0
0
0
2
4
6
8
0
10
75
100
125
TA (°C)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
100
150
Thermal Resistance (normalized)
1.0
TO-243AA (DC)
TO-243AA (DC)
TO-92 (DC)
TA = 25°C
10
ID (milliamps)
50
25
ID (milliamps)
1
10
100
TO-243AA
0.6
1000
VDS (volts)
TA = 25°C
PD = 1.2W
0.4
TO-92
P D = 1W
0.2
0
0.001
0.1
1
0.8
T C = 25°C
0.01
0.1
tP (seconds)
3
1.0
10
LND150
Typical Performance Curves
BVDSS Variation with Temperature
ID vs. RSOURCE
1.4
VGS = -5V
1.1
ID
↓
LND1
1.2
1.0 125°C
ID (milliamps)
BVDSS (normalized)
25°C
1.0
RSOURCE
0.8
0.6
0.4
0.2
0.9
-50
0
50
100
0.0
10
150
100
1K
10K
100K
Tj (°C)
RSOURCE (ohms)
Transfer Characteristics
VGS(OFF) and RDS Variation with Temperature
1.8
10
2.0
1.6
VGS(OFF) (normalized)
ID (milliamps)
TA = -55°C
TA = 25°C
TA = 125°C
5
RDS(ON) @ ID = 1mA
1.6
1.4
1.2
1.2
0.8
RDS(ON) (normalized)
VDS = 400V
VGS(OFF) @ 100nA
1.0
0.4
0
0.8
-1
0
1
2
-50
3
0
50
VGS (volts)
100
150
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
10
10
VGS = -10V
8.7pF
5
VGS (volts)
C (picofarads)
CISS
5
VDS = 20V
40V
60V
0
COSS
CRSS
-5
0
0
10
20
30
0
40
0.1
0.2
0.3
QC (nanocoulombs)
VDS (volts)
08/16/06
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
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www.supertex.com