VG025
High Linearity Variable Gain Amplifier
• Single +5V Supply Voltage
• 16-pin 4x4mm lead-free/green/
RoHS-compliant QFN Package
• MTTF > 1000 years
Applications
• AGC circuitry
• Temperature compensation circuits
• DCS/PCS, cdma2000TM, W-CDMA
Parameter
Operational Bandwidth
Test Frequency
Gain (2)
Input Return Loss (2)
Output Return Loss (2)
Output P1dB
Output IP3 (3)
Noise Figure (2)
Gain Variation Range (4)
Gain Variation Control Voltage (5)
Supply Voltage
Operating Current Range
Gain Control Pin Current
N/C
N/C
N/C
14
13
12 RF OUT
N/C 2
11 N/C
N/C 3
10
Interstage
Match
9 N/C
RF IN 4
The VG025 is available in a lead-free/green/RoHScompliant 16-pin 4x4mm QFN surface-mount package
with an exposed backside paddle to allow an MTTF
rating of over 1000 years at a mounting temperature of
+85º C. All devices are 100% RF & DC tested and
packaged on tape and reel for automated surface-mount
assembly.
Specifications (1)
15
5
6
7
8
Gain
Control
• Constant +40 dBm OIP3 and +21
dBm P1dB over all gain settings
16
N/C 1
N/C
• 21 dB Attenuation Range
The VG025 is a high dynamic range variable gain
amplifier (VGA) capable of achieving an analog
attenuation range of up to 21 dB. The +21 dBm output
compression point and +40 dBm output intercept point
of the amplifier are maintained over the entire
attenuation range, making the VG025 ideal for use in
temperature compensation circuits or AGC loops.
N/C
• Tunable within 50 – 2200 MHz
Functional Diagram
N/C
Product Description
Interstage
Match
Product Features
Function
RF Input
Gain Control
Interstage Match
RF Output / DC bias
No Connect or GND
Ground
Pin Number
4
8
6, 10
12
All other pins
Backside slug
Typical Performance (1)
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
dB
V
V
mA
mA
Typ
50
13.5
37
16
0
120
800
15
6.3
7.6
21.3
39
5.3
21
5
150
26
Max
Parameter
2200
Frequency
Gain (2)
Input Return Loss (2)
Output Return Loss (2)
Output P1dB
Output IP3 (3)
Noise Figure (2)
Gain Variation Range
Units
MHz
dB
dB
dB
dBm
dBm
dB
dB
Typical
240
15.4
11
11
21.8
42
4.5
20
800
15
6.3
7.6
21.3
39
5.3
21
1960
8.4
12
6.5
22
40
8.1
14
2140
8.4
11
5.6
22
40
8.2
13
24
4.5
180
28
1. Test conditions unless otherwise noted: 25ºC, Vsupply = +5 V, in tuned application circuit. Vctrl
is the control voltage through the 120 Ω dropping resistor as shown in the application circuit on page 2.
2. Specifications refer to the device at the maximum gain setting (Vctrl=0V). The input and output
return loss will be dramatically improved with an attenuation setting greater than 1 dB.
3. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
4. The gain variation range is measured as the difference in gain with Vctrl = 0 and 4.5V at 800 MHz.
5. This voltage refers to the VCTRL as shown in the circuit schematic on page 2. There should be a
series resistance of 120Ω between the control voltage and pin 8 for proper operation.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
Amplifier Supply Voltage (pin 12)
Pin 8 (Gain Control) Current
RF Input Power (continuous)
Junction Temperature
Rating
-40 to +85 °C
-55 to +125 °C
+6 V
30 mA
4 dB above Input P1dB
+220 °C
Operation of this device above any of these parameters may cause permanent damage.
Ordering Information
Part No.
VG025-G
Description
High Linearity Variable Gain Amplifier
(lead-free/green/RoHS-compliant 4x4mm QFN package)
VG025-PCB240 240 MHz Evaluation Board
VG025-PCB800 800 MHz Evaluation Board
VG025-PCB2000 1.7 – 2.2 GHz Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Page 1 of 7
July 2010
VG025
High Linearity Variable Gain Amplifier
Application Circuit Configurations
Circuit Board Material: .014” FR-4, 4 layers, .062” total thickness
The WJ VG025 variable gain amplifier can operate over a very
broad range of frequencies (50 - 2200MHz), but needs specific
matching circuits for specific bands of interest. At the maximum
gain state, reasonable matching is only available for about ±10% of
the reference frequency. The amplifier operates with a typical
current of 150 mA at +5 V while the attenuator current can be varied
from 0 to 30 mA, while maintaining constant OIP3 and P1dB. The
RF matching of the VG025 for the entire frequency range can be
accomplished with the systematic adjustment of only a few parts.
The RF matching is not influenced by different attenuator drive
methods provided there is adequate decoupling of the attenuator bias.
This reference application circuit uses voltage applied between 0
and 4.5V onto the Vctrl as shown on the schematic above. The R2 is
a current limiting resistor to help linearize the drive of the attenuator
and give better attenuator current control.
To properly design the VG025 for an application, pick the frequency
of interest. Choose blocking capacitor values which give RF
impedance of less than 3 ohms. Choose the RF chokes for the
largest inductance while still having resonant frequency about 30%
Reference Frequency
C1, C5
C2
C3, C4
C6
C9
L1, L2
L3
L4
R1
R2
Attenuation Range
Maximum Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Noise Figure
MHz
pF
pF
μF
pF
pF
nH
nH
nH
Ω
Ω
dB
dB
dB
dB
dBm
dBm
dB
64
1000
0Ω
.01
DNP
27
470
220
DNP
DNP
120
20.8
14.9
14
10.7
21.8
40
5.9
127
1000
0Ω
.01
DNP
8.2
220
100
DNP
DNP
120
20.4
15.4
14.5
10.7
21.5
42
5.2
greater than the Reference frequency (this allows for good isolation
and inductor variation). Next choose L3 and C9 for interstage
matching. C9 is only needed for lower frequencies and determines
the low frequency roll off of the gain. L3 will have dominant
control over the input and output return losses at maximum gain
state (0 mA gain control pin current). C2 is needed to resonate the
package parasitics to achieve the maximum attenuation values with
attenuator current. With attenuator control pin current of 26 mA, C2
can be chosen to provide maximum attenuation. See the chart below
for suggested component values and predicted performance at
various reference frequencies.
Component values can be
interpolated for reference frequencies not listed.
For lower frequencies the lumped element values can be used and
the layout with unplaced component pads does not greatly affect the
RF performance of the circuit. For frequencies greater than 500
MHz, component size and trace length have more influence on
circuit performance. Smaller components and shorter trace lengths
reduce the affects of the external component parasitics and
interaction with the multichip module parasitics.
170
1000
0Ω
.01
DNP
5.6
120
68
DNP
DNP
120
19.6
14.8
14.5
10
21.5
42
5.4
240
1000
0Ω
.01
DNP
1.2
220
47
DNP
DNP
120
20
15.4
11
11
21.8
42
4.5
800
56
27
.01
DNP
DNP
22
8.2
82
DNP
120
21
15
6.3
7.6
21.3
39
5.3
1850
56
3.6
.01
DNP
DNP
12
DNP
33
DNP
120
12
8.6
11
7.7
22
40
7.9
1960
56
3.6
.01
DNP
DNP
12
DNP
33
DNP
120
14
8.4
12
6.5
22
40
8.1
2140
56
3.6
.01
DNP
DNP
12
DNP
33
DNP
120
13
8.4
11
5.6
22
40
8.2
DNP = Do Not Place (Component is not used in the design)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Page 2 of 7
July 2010
VG025
High Linearity Variable Gain Amplifier
240 MHz Circuit Performance (VG025-PCB240)
S21 vs. Frequency
S11 vs. Frequency
-5
-5
16
14
S22 (dB)
18
-10
-15
10
200
220
240
+25 °C
260
-40 °C
+85 °C
280
-25
200
300
220
-15
260
-40 °C
+85 °C
280
-25
200
300
S11 vs. Frequency vs. Control Voltage
0
15
-5
-5
0
-10
Vctrl=0.784V
Vctrl=1.844V
Vctrl=4.230V
220
240
260
-15
-20
Vctrl=0.000V
Vctrl=0.784V
Vctrl=1.133V
Vctrl=1.844V
Vctrl=1.133V
-25
Vctrl=4.230V
280
-30
200
-5
Vctrl=0.000V
-10
280
300
Vctrl=0.000V
Vctrl=0.784V
Vctrl=1.133V
Vctrl=1.844V
300
220
240
Frequency (MHz)
P1dB vs. Frequency
-25
260
280
-30
200
300
20
18
+85 °C
245
40
5
30
20
3
2
0
4
8
12
16
Attenuation (dB)
OIP3 vs. Attenuation Setting
20
24
30
35
30
25
25
8
10
-4
0
Normalized Gain vs. Vctrl
25 °C, 240 MHz
0
-5
-10
12
10
15
20
Pin 8 Attenuation Control Current (mA)
25
-80
-100
-4
16
0
4
8
Output Power (dBm)
12
16
4
5
Ictrl vs. Vctrl
25 °C
0
30
-4
25
-8
20
-12
-16
15
10
5
-20
0
-24
5
-60
Ictrl (mA)
Normalized Gain (dB)
5
IMD_Low
IMD_High
-120
4
8
Output Power (dBm)
25 °C, 240 MHz
10
260
-40 °C
Gain vs. Pin 8 Attn. Control Current
15
250
IMD products vs. Output Power
40
+25 °C
+85 °C
240
+85 °C
fundamental frequency = 240, 241 MHz; +25 °C, 0dB Atten
-40
IMD products (dBc)
OIP3 (dBm)
35
4
6
Attenuation (dB)
230
+25 °C
Frequency (MHz)
frequency = 240, 241 MHz, 0dB Atten.
45
40
2
-40 °C
1
220
OIP3 vs. Output Power
frequency = 240, 241 MHz, +5 dBm/tone, +25 °C
300
4
10
250
280
Vctrl=0V (Minimum attenuation)
6
Frequency (MHz)
260
Noise Figure vs. Frequency
50
0
240
240
Frequency (MHz)
NF (dB)
phase change (deg)
22
235
220
25 °C, 240 MHz
24
16
230
-20
Phase change vs. Attenuation
26
+25 °C
-15
Frequency (MHz)
Vctrl=0V (Minimum attenuation)
-40 °C
-10
S22 (dB)
S11 (dB)
5
0
260
Vctrl=4.230V
10
0
240
+85 °C
S22 vs. Frequency vs. Control Voltage
0
45
+25 °C
Frequency (MHz)
20
-15
200
220
Frequency (MHz)
S21 vs. Frequency vs. Control Voltage
S21 (dB)
+25 °C
240
Frequency (MHz)
P1dB (dBm)
-10
-20
-20
-40 °C
OIP3 (dBm)
Vctrl=0V (Maximum Gain Setting)
0
12
Gain (dB)
S22 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
0
S11 (dB)
S21 (dB)
Vctrl=0V (Maximum Gain Setting)
20
0
1
2
3
4
5
0
1
2
3
Vctrl (V)
Vctrl (V)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Page 3 of 7
July 2010
VG025
High Linearity Variable Gain Amplifier
800 MHz Circuit Performance (VG025-PCB800)
S21 vs. Frequency
S11 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
16
14
12
10
700
+25 °C
800
900
0
0
-5
-5
-10
-15
-40 °C
-25
700
1000
S21 vs. Frequency vs. Control Voltage
900
-25
700
1000
0
-5
-10
-15
700
Vctrl=0.00V
Vctrl=0.78V
Vctrl=1.73V
Vctrl=4.50V
800
900
-5
-5
-10
-15
-20
-30
700
1000
Vctrl=0.00V
Vctrl=0.78V
Vctrl=1.73V
Vctrl=4.50V
800
Vctrl=1.10V
900
-30
700
1000
800
Vctrl=1.10V
900
1000
P1dB vs. Frequency
Phase change vs. Attenuation
Noise Figure vs. Frequency
25 °C, 800 MHz
Vctrl=0V (Maximum Gain Setting)
+85 °C
Noise Figure (dB)
phase change (deg)
+25 °C
6
60
40
20
800
900
1000
0
4
8
12
Attenuation (dB)
OIP3 vs. Attenuation Setting
16
20
2
35
30
25
25
+25 °C
8
10
-40 °C
0
4
8
Output Power (dBm)
Normalized Gain vs. Vctrl
25 °C, 800 MHz
25 °C, 800 MHz
4
0
-4
-8
12
Pin 8 Attenuation Control Current (mA)
25
-60
-80
16
-4
0
4
8
Output Power (dBm)
12
16
4
5
Ictrl vs. Vctrl
25 °C
0
30
-4
25
-8
20
-12
-16
15
10
5
-20
0
-24
20
IMD_Low
IMD_High
Ictrl (mA)
Normalized Gain (dB)
8
1000
+85 °C
Gain vs. Pin 8 Attn. Control Current
12
900
-100
-4
16
800
IMD products vs. Output Power
40
30
+85 °C
fundamental frequency = 800, 801 MHz; +25 °C, 0dB Atten
-40
IMD products (dBc)
OIP3 (dBm)
35
+25 °C
Frequency (MHz)
frequency = 800, 801 MHz, 0dB Atten.
45
40
15
3
OIP3 vs. Output Power
frequency = 800, 801 MHz, +5 dBm/tone, +25 °C
10
4
-40 °C
Frequency (MHz)
4
6
Attenuation (dB)
5
1
700
0
5
Vctrl=4.50V
Vctrl=0V (Minimum attenuation)
18
0
Vctrl=0.78V
Vctrl=1.73V
Frequency (MHz)
20
2
Vctrl=0.00V
Frequency (MHz)
22
0
-20
Frequency (MHz)
24
45
1000
-15
-25
80
16
700
900
S22 vs. Frequency vs. Control Voltage
-10
-25
Vctrl=1.10V
26
-40 °C
800
+85 °C
0
S22 (dB)
S11 (dB)
5
+25 °C
Frequency (MHz)
S11 vs. Frequency vs. Control Voltage
10
S21 (dB)
-40 °C
+85 °C
0
15
P1dB (dBm)
-15
Frequency (MHz)
20
OIP3 (dBm)
+25 °C
800
Frequency (MHz)
Gain (dB)
-10
-20
-20
+85 °C
Vctrl=0V (Maximum Gain Setting)
5
S22 (dB)
S11 (dB)
S21 (dB)
18
-40 °C
S22 vs. Frequency
Vctrl=0V (Maximum Gain Setting)
20
0
1
2
3
4
5
0
1
2
3
Vctrl (V)
Vctrl (V)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Page 4 of 7
July 2010
VG025
High Linearity Variable Gain Amplifier
1960 MHz Circuit Performance (VG025-PCB2000)
S21 vs. Frequency vs. Control Voltage
S11 vs. Frequency vs. Control Voltage
S11 (dB)
0
-5
-10
1700
Vctrl=0.00V
Vctrl=0.82V
Vctrl=1.72V
Vctrl=4.50V
1750
1800
-5
-5
-10
-15
-20
Vctrl=1.15V
Vctrl=0.82V
Vctrl=1.15V
Vctrl=1.72V
-15
-20
1850
1900
1950
-25
1700
2000
1750
1800
1850
1900
1950
-25
1700
2000
1850
1900
1950
P1dB vs. Frequency
Phase change vs. Attenuation
Noise Figure vs. Frequency
25 °C, 1900 MHz
phase change (deg)
1900
2000
2100
Vctrl=0V (Maximum Gain Setting)
8
10
0
7
6
-10
2200
5
0
2
4
Frequency (MHz)
OIP3 vs. Attenuation Setting
6
8
10
Attenuation (dB)
12
4
1700
14
35
30
40
35
30
+25 °C
25
-40 °C
8
10
2200
IMD_Low
IMD_High
-60
-80
-100
-120
-4
0
4
8
Output Power (dBm)
12
16
-4
0
4
8
Output Power (dBm)
12
16
4
5
Ictrl vs. Vctrl
Normalized Gain vs. Vctrl
25 °C, 1900 MHz
Gain vs. Pin 8 Attn. Control Current
25 °C, 1900 MHz
2100
+85 °C
25
4
6
Attenuation (dB)
2000
fundamental frequency = 800, 801 MHz; +25 °C, 0dB Atten
-40
IMD products (dBc)
OIP3 (dBm)
40
1900
IMD products vs. Output Power
frequency = 1900, 1961 MHz, 0dB Atten.
45
1800
Frequency (MHz)
OIP3 vs. Output Power
frequency = 1960, 1961 MHz, +5 dBm/tone, +25 °C
2000
9
-20
2
1800
Vctrl=0V (Minimum attenuation)
18
0
1750
Frequency (MHz)
20
45
Vctrl=1.72V
Frequency (MHz)
22
1800
Vctrl=0.82V
Vctrl=1.15V
Vctrl=4.50V
20
16
1700
Vctrl=0.00V
Frequency (MHz)
24
OIP3 (dBm)
Vctrl=0.00V
-10
Vctrl=4.50V
26
P1dB (dBm)
0
NF (dB)
S21 (dB)
5
S22 vs. Frequency vs. Control Voltage
0
S22 (dB)
10
25 °C
0
30
-2
25
8
Gain (dB)
6
4
2
0
-2
-4
Ictrl (mA)
Normalized Gain (dB)
10
-6
-8
-10
0
5
10
15
20
Pin 8 Attenuation Control Current (mA)
25
10
0
-14
-6
15
5
-12
-4
20
0
1
2
3
4
5
0
1
2
3
Vctrl (V)
Vctrl (V)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Page 5 of 7
July 2010
VG025
High Linearity Variable Gain Amplifier
2140 MHz Circuit Performance (VG025-PCB2000)
S21 vs. Frequency vs. Control Voltage
S11 vs. Frequency vs. Control Voltage
S11 (dB)
0
-5
Vctrl=0.00V
Vctrl=1.72V
-10
2100
2120
Vctrl=0.82V
Vctrl=4.50V
2140
2160
-10
-15
Vctrl=0.00V
Vctrl=1.72V
2200
2120
2160
2180
2200
phase change (deg)
1900
2000
2100
9
40
8
30
20
7
6
5
10
0
2
4
6
8
10
Attenuation (dB)
12
4
1700
14
IMD products (dBc)
OIP3 (dBm)
-40
40
35
30
+25 °C
25
-40 °C
8
10
0
-80
-100
4
8
Output Power (dBm)
12
-4
16
4
8
Output Power (dBm)
25
-4
-6
-8
-10
-4
-12
-6
-14
20
Pin 8 Attenuation Control Current (mA)
25
Ictrl (mA)
Normalized Gain (dB)
-2
-2
16
4
5
25 °C
8
0
12
Ictrl vs. Vctrl
30
15
0
25 °C, 2140 MHz
0
10
IMD_Low
IMD_High
Normalized Gain vs. Vctrl
25 °C, 2140 MHz
2
2200
-120
-4
Gain vs. Pin 8 Attn. Control Current
4
2100
fundamental frequency = 2140, 2141 MHz; +25 °C, 0dB Atten
-60
10
6
2000
+85 °C
25
4
6
Attenuation (dB)
1900
IMD products vs. Output Power
OIP3 vs. Output Power
30
1800
Frequency (MHz)
frequency = 2140, 2141 MHz, 0dB Atten.
45
35
2200
Vctrl=0V (Maximum Gain Setting)
50
2200
40
5
2180
Noise Figure vs. Frequency
OIP3 vs. Attenuation Setting
0
2160
25 °C, 2140 MHz
0
2
2140
Vctrl=1.15V
Phase change vs. Attenuation
frequency = 2140, 2141 MHz, +5 dBm/tone, +25 °C
0
2120
Vctrl=0.82V
Vctrl=4.50V
P1dB vs. Frequency
20
1800
Vctrl=0.00V
Vctrl=1.72V
-25
2100
Vctrl=0V (Minimum attenuation)
Frequency (MHz)
OIP3 (dBm)
-20
Vctrl=1.15V
Frequency (MHz)
18
Gain (dB)
2140
-15
Frequency (MHz)
22
45
Vctrl=0.82V
Vctrl=4.50V
-10
Frequency (MHz)
24
P1dB (dBm)
-5
-25
2100
26
16
1700
-5
-20
Vctrl=1.15V
2180
0
NF (dB)
S21 (dB)
5
S22 vs. Frequency vs. Control Voltage
0
S22 (dB)
10
20
15
10
5
0
0
1
2
3
4
5
0
1
2
3
Vctrl (V)
Vctrl (V)
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
Page 6 of 7
July 2010
VG025
High Linearity Variable Gain Amplifier
VG025-G Mechanical Information
This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260°C reflow temperature) and leaded (maximum
245°C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Product Marking
The component will be marked with a
“VG025-G” designator with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
ESD / MSL Information
Mounting Configuration / Land Pattern
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes 1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL:
Standard:
Level 2 @ 260 ˚C convection reflow
JEDEC Standard J-STD-020
N/C
N/C
N/C
N/C
Functional Pin Layout
16
15
14
13
N/C 1
12 RF OUT
N/C 2
11 N/C
N/C 3
10
9 N/C
Parameter
Rating
Operating Case Temperature
Thermal Resistance, Rth (1)
Junction Temperature, Tjc (2)
-40 to +85 °C
59 °C / W
129 °C
1. The thermal resistance is referenced from the hottest part of the
junction to the backside ground copper tab.
2. This corresponds to the typical biasing condition of +5V, 150 mA at
an 85° C case temperature. A minimum MTTF of 1 million hours is
achieved for junction temperatures below 160° C.
6
7
N/C
N/C
Function
RF Input
Gain Control
Interstage Match
RF Output / DC bias
No Connect or GND
Ground
8
Gain
Control
5
Interstage
Match
RF IN 4
Thermal Specifications
Interstage
Match
Pin No
4
8
6, 10
12
All other pins
Backside slug
MTTF vs. GND Tab Temperature
1000
100
10
1
60
70
80
90
100
Tab Temperature (°C)
110
Specifications and information are subject to change without notice
TriQuint Semiconductor Inc • Phone 1-503-615-9000 • FAX: 503-615-8900 • e-mail: info-sales@tqs.com • Web site: www.TriQuint.com
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July 2010