O W Y.C 0 0 1 M.T . O W C . W WW .100Y M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W 0 0 M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W W .T M.T .100 .TW 100 M . O W M O W C .CO .TW SERIES WW .100Y. .TW WW .100Y.C M.TW M 00Y O 1 W M . O W C . O W W C W Y .C W WW .100Y. .TW M.T .100 .TW 00Y M O 1 W M . COMMERCIAL O W C . W .CO .TW WW .100Y .TW WW .100Y.C M.TW M 00Y O 1 W M . O W .C SENSITIVE TO-5 WW RELAYS WW 00Y.CO .TW .TW 00Y WW .100Y.C M.TW 1 M . O 1 W O W OM W. WW .100Y.C M.TW WW .100Y.C M.TW DPDT WW .100Y.C M.TW O W O W O W WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW O WW 00Y.CO .TW W WW 00Y.CO .TW C . W W W Y W W M .1 .T 1 00 WW 00Y.CO .TW W.1 Y.COM W SERIES WW. 0Y.COM W W W W .T 0 W .T RELAY TYPE 00 W.1 Y.COM W W.1 Y.COM W W W.1 Y.COM DESIGNATION W W W W .T W M.T .100 .TW 732 100basic relay 00 M . O 1 W M . O W DPDT C O W WW .100Y. .TW WW .100Y.C M.TW WW .100Y.C M.TW M O W 732D DPDT suppression W relay withOinternal diode for coil transient O W WW .100Y.C M.TW W WW .100Y.C M.TW WW .100Y.C M.T732TN DPDT coilW transient suppression O transistor driver and W .CO .Tdiode O W W .Cinternal Y WW relay00with C W . 0 Y W W W 0 Y W T . 1 W M . .T 1 00 M . O 1 W M . O W O W WW .100Y.C M.TW W Y.C WW .100Y.C M.TW 0 WW INTERNAL T . 0 1 CONSTRUCTION DESCRIPTION OM WW 00Y.CO .TW W. WW 00Y.CO .TW C . W W W Y W W .T 00 .1 TO-5 relay, OM has become W.1 Yby.CTeledyne, OM originally conceived and WThe Wdeveloped W.1 Y.COM W C . W W 0 Y W W .TW W one.1of .Tstandards for low-level 10 00the industry W switching from dry circuit to 1 M . .T 00 M O 1 W M . O for high-density PC board W C . O W W C . Y W C ampere. Designed mounting, the 732 relay W . 0 Y W T . Wis one of 0 W .T WW .100Y Msmall .1because .TW 100versatile M . O W M the most ultraminiature relays available of its size and O W C O W W Y.Cdissipation. WW .100Y. TW UNI-FRAME . 0 WW T . low coil power 0 WW .100Y.C M.TW M M .1 UPPER WW 00Y.CO .TW WW 00Y.CO .TW W WW 00Y.CO STATIONARY W W 1 W T M .1 ARMATURE W.manufacturing M.CONTACT .1 The W following unique and OMconstruction features W .CO techniques O W C . Y W C W . 0 Y W W .TWhigh W 0 0 Y W T . to environmental extremes provide excellent resistance and overall 1 0 W M . .T LOWER 1 00 M . O 1 W M . O W O STATIONARY W reliability: WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.CONTACT TW W O WW 00Y.CO .TW W .CO .TW W C . Y W W W 0 Y W • All welded construction. W MOVING.T 00 .10 OM W.1 Y.Cmechanical OM W OM W W.1 Y.CCONTACT C • Unique uni-frameY design providing high magnetic efficiency0and . W W W W .TW W 0 0 W T . 1 0 0 W T M . . 1 0 M . rigidity. O 1 W O .C OM W W. W WW 0ratios 00Y 0Y.Cfor resistance Wforce/mass • High and vibration. .TW to shock W 1 WW .100Y.C M.TW M.T . 1 M . O W O W C O W • Advanced provide maximum .C Yof. internal.TW WWassurance WW cleaning0Ytechniques .TW 100 WW .100Y.C M.TW M . M cleanliness. W.10 W O .CO .TW O W W C . Y W C W . 0 Y W W W • Precious with gold plating assures 0 excellent Y W metal alloy W 100 contactOmaterial M.T capabilities. .dry W.1 Y.COM W M.T .100 W O high current and circuit switching W W C . W C W Y W .T W W WW .100Y. .100 M.T .100 OM W M.T O W C . O W W C W W has an00internal 0Y Y. W for coil relay discrete .TW silicon diode WW .100Y.C M.TWThe 732D W M.T .10transient 1 M . O W O W C . TheW hybrid Series.C 732TN relayW has an internalW silicon diodeYand W .CO .Tsuppression. .TW W W The integrated .T of the relayWwith itsWassociated 100 00Y packaging WW AND M . 1 00Y transistor driver. M . ENVIRONMENTAL O 1 M . O O W W .C PC.Tboard Y.C WWgreatly W floor space WW semiconductor devices reduces requirements PHYSICAL SPECIFICATIONS W W 100 as OM.T 00Y WW .100Y.C M.T . 1 M . W W costs. O O well as component installation WW .100Y.C M.TW WWto +125°C W Temperature Storage W–65°C Y.C WW .100Y.C M.TW 0 T . 0 O 1 O (Ambient) W OMBy virtue of its inherently WW circuit W to .+85°C Operating –55°C W 0Y.C M.T Y.C intercontact capacitance andW contact 0 0 WW low T . 1 0 WW .100Y.C M TW . . M .1 to be an Wswitch Y.CO losses, the 732 relay has proven ultraminiatureW RF Vibration .CO excellent WW 10 g’s toW 500 Hz Y.CO W Y W W W 00 0 W T . (General Note 1) W .1for for frequency ranges well into .the A typical RF application .T 10 UHF spectrum. 00 M 1 W M . O W O W .C W handheld radio combined WW Shock 30 W g’s,W .TWwherein the 00Y transceivers, 0Y.C theMTO-5 TWrelay is inW . 1 0 M . 1 . O (General Note 1) 6 msec, half-sine features of good RF performance, small.C size, low coil power dissipation and W O W W .TW 00Y of Transmit-Receive WW .100Y.ChighM reliability preferred.1 method switching (see .TW make it aW M Enclosure Hermetically sealed O W O 1). W .C W C Figure . Y W W 0 Y W 0 .T 00 Weight 0.16 oz.W (4.50g) max. W.1 W.1 Y.COM W W W W W M.T .100 O W C W WW .100Y. M.T O W WW .100Y.C 732 CENTIGRID® AND TO-5 LOAD VOLTAGE (VDC) VSWR dB CENTIGRID® AND TO-5 O W Y.C 0 0 1 M.T . O W C . W WW .100Y M.T O W SERIES 732 .C W .TW 003)Y .TW (@25°C)W(Notes GENERAL ELECTRICAL SPECIFICATIONS 2.1& M M O W .CO .TW WW .100Y.C M.TW 00Y Contact Arrangement 2 Form C M (DPDT) 1 . O W O W Rated Duty WW .100Y.C M.TW 0Y.C M.TW WW .10Continuous O (measured 1/8" from header) Contact Resistance ohm life; 0.25 ohm max. after life at 1A/28Vdc WW W .COmax. before Y.C WW 0.15 W 0 Y W W 0 0 W T . 1 0 M.T . .T Load Ratings (DC) W.1Resistive: OM1 Amp/28Vdc Contact O W M C O Fig. 2 for other DC W Inductive: (320 mH) .C 200.TmA/28Vdc W .C(See WW .100Y. .TW W W 00Y M Lamp: 100 mA/28Vdc .Tvoltage/current ratings) 1 00Y resistive M . O 1 W M . O W Level: .C O W 50W µs/10 to 50mVWW W W 00Y 0Y.C 10Mto.T Y.C WW Low 1 0 0 T M.T . . 1 0 . O 1 Resistive: 250 mA/115Vac, 60 and 400 Hz (Case not grounded) W Contact Load Ratings (AC) M . O W C . W .CO .TW 0Y mA/115Vac, Hz (Case 0 WW .TW WW .100Y.C 100M .TW 60 and 400 1 grounded) M . 00Y O 1 W M . O W 10,000,000 cycles at low level O W .C (typical) 0Y.C M.TW WW 00Contact W 0Ycycles Y.C Life.Ratings WW 1,000,000 TW . (typical) at 0.5A/28VdcW resistive .10 0 T 1 M . 1 W 100,000 cycles other loads specified OM W above 00Y.CO .TW W. .COmin. at.TallW WW C . Y W W W 0 Y W 0 W M .1 .T 00 Mcycles min.) Overload 2A/28Vdc (100 O W.1 Resistive OM Rating WW 00Y.CO .TW W.1 Contact C . W C W . Y W W W WContact factory Contact 00 W .T 00Y CarryMRating M.T W.1 Y.COM W .1Coil Onominal W.1 typical O W W C Operating Power 200 milliwatts at rated voltage . W C W . Y W .T W .T WW .Operate .100 100at nominal 00Y Time M.TW M . 6.0 msec max. rated coil voltage OM 1 W O W C . O W W C . Y W .C W .TW 0Y 732D,M732TN: W 3.0 msec 732: .TW7.5 msec max. 100 0max. WW Release M . 1 00YTime M.TW . O 1 W . W O W Intercontact 0.4 pf W typical .CO .TW .CCapacitance WW .100Y.C M.TW W 0Ybetween YResistance W megohms 0 0 WW Insulation T . 1 0 M . 1,000 min. mutually isolated terminals O W W W.1 Y.COM W .CO W Y350 WW .100Y.C M.TW 0 WW pressure: Strength Atmospheric Vrms/60Hz T . 0 0 WWDielectric T . 1 0 M . M WW 00Y.CO .TW 2.0 max W.1 CoilYTransient Negative 732D, 732TN WW 00Y.CO .TW .CO (Vdc) W W W 0 WW T .1 Diode P.I.V. 732D, 732TN W.1 Y.COM W60 min. .10 (Vdc) OM. OM W W W C . W C W W .T 0.3 min W Base Voltage 00 0Y(Vdc) M.TW Y. W to Turn W732TN .10Off W.1 Y.COM W Transistor M.T .100 O W O W W C Emitter-base breakdown Voltage (BV EBO ) (Vdc) . W W W Characteristics .T 6.0 min W 00 0YVoltage M Y.C WWbreakdown T . 1 0 0 W T M . . 1 0 . Collector-base (BV CBO ) (@25°C & lc = 100 µA) (Vdc) 60 min O 1 W OM W W. W Y.C WW 00Y.CO .TW C . 0 W T W . W 0 Y W W T M .1 .SPECIFICATIONS 1 (Note 00 M . O 1 W M . O W DETAILED ELECTRICAL (@25°C) 3) O W WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW O 732-5 732-6 732-9 WW 732-12 732-18 732-26 BASE PART C O W W .CO .732D-6 Y.732D-18 WW 00Y732D-5 C W . 0 W W .T732D-26 W 0 Y W T NUMBERS 732D-9 732D-12 1 0 W T M . . 1 0 M . W O 732TN-6 732TN-9 W 732TN-5 732TN-18 .CO .732TN-26 W.1 (See NoteO8Mfor full P/N example) WW W 0Y Y.C W 732TN-12 TW 0 0 T . 1 0 WW .100Y.C M.TW Nom. W M . 1 M . O W 9.0 18.0 26.5 O 6.0 .C O W12.0 W W WW 005.0 Coil VoltageW Y.C .TW 15.0 W 20.0W.100Y30.0 OM.T W (Vdc) .100Y.C M.TW Max. W 7.5 10.0 40.0 1 M . O W C O (732TN: See Note 4)W W ±20% Y. Coil Resistance 200 TW 400 850 .C@25°C) WW .TW 0Y.C M W . 1001600 OM3300 0100 WW (Ohms . .TW 1 00YPulse Operated . 1 W M . Pick-up Voltage (Vdc, Max.) 3.5 4.5 6.8 9.0 13.5 18.0 O W O W .C(mAdc, 0Y.C M W0.47 WW 00YOn .TW W(Note 5) WW .1.50 00.38 0Y.C 1.00 TW 0.75 . 1 0 T 732TN BaseW Current to Turn Min.) 0.24 . . 1 M O 1 W M . O W C . O W WW .100Y .TW WW .100Y.C M.TW WW .100Y.C M.TW M O W O W O 2) W PERFORMANCE CURVES (Note WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW O W TYPICAL RF DC CONTACT RATINGW (RESISTIVE) O WPERFORMANCE W Y.C WW 00Y.CO TYPICAL C W . 0 W W W 0 Y W T . 0 W T M.T .1 . 1 0 M . O 1 W M . O W C 0 O WIN WW .100Y. .TW WW .100Y.C M.TW WW S.E1R0TIO0NYLO.C M.TW .1 M O 300 W O W SS O W .2 WW .100Y.C M.TW WW250 .100Y.C M.TW WW .100Y.C M.TW .3 O W O W O W W Y.C WW .100Y.C M.TW .4 0 WW T . 0 WW .100Y.C M.TW 1 M . 200 10 O1.92 WW 00Y.CO .TW WW 00Y.CO .TW W ) Y.C WW W WR0 W S (V 20 1.22 W T S S 150 M .1 RN LO W.1 Y.COM W M. .N1TA0CTS O W RETU O W W C 30 1.07 . W C W Y W CO .T Y. W OSS WRW .100 .TW 100 M.T .100 40 OM N AC 10OL0ES 1.02 W M O W S.S P C ATIO O . L O W W R C O C . IS NA W 50 .TW 00Y Y.C1.01 .TW WW .100Y TW ATIO W . 1 0 M . 50 ISOL W 0 M O 1 W . O 60 1.00OM W C WW .100Y.C M.TW WW 00Y.1.00 W WW .100Y.C M.TW 70 W T . O W .01 0.5 .1 O 0.5 0.6 0.7 0.8 W 0 0.1 W 0.2 0.3 .C0.4 W..51 1.0 OM W 0Y.C M.T W 0.9 1.0 0 WW .100YLOAD T . 1 CURRENT (AMPS DC) WW .100Y.C M.TW FREQUENCY (GHz) . OM 2 O WW 00Y.CO WW 00Y.CFIGURE FIGURE 1 WW C W . W W Y W T . W .1 .T 00 W.1 Y.COM W WW W.1 Y.COM W W W W 0 W .T 0 W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W .100 M.T .100 OM W O W C . W C Y W W WW .100Y. .100 M.T W O W WW WW .100Y.C M.TW O W WW .100Y.C M.TW O W WW .100Y.C O W Y.C 0 0 1 M.T . O W C . W WW .100Y M.T O W SERIES 732 WW .100Y.C M.TW .TW M WW 00Y.CO .TW SCHEMATIC DIAGRAM OUTLINE DIMENSIONS 0Y.CO W W T . 0 W.1 Y COM W W.1 Y.COM TERMINAL CASE DETAIL LOCATIONS ANDW PIN NUMBERS (REF. .ONLY) W W W (Viewed from Terminals) .T .370 W .100 (9.40) M.T .100 OM W O W C DIA. MAX. . W C W . Y W .031 (.79) W M.T .100 .TW .335 W W.100Y OM.TW ± .003 (0.08) 732 O W M C O WBASE 0010Y. W .C W C (8.51) TRANSISTOR W . Y W T . W 0 Y W T . 0 M CONNECTION FOR .1 .T DIA. MAX. 00 OM W.1 Y.035 732TN ONLY WW 9 00Y.1CO .TW W.1 Y.COM W C . W (.89) W W W 8 .1 00 .010 (0.25) M.T .T 00 2 OM .385 (9.76) MAX. W.1 W O .C W W.1 Y.COM W C . Y W W 0 Y W .TW 0 0 W T . 1 3 0 M . 7 .T 1 00 M . O 1 W M . .200 (5.08) O C DIA. TW WW .010 Y.(.25) WW 6 .51040Y.C M.TW 732D 732TN WW 00Y.CO .TW WIRE LEAD:W 36° ±3° .75 (19.05) MIN. 00 . 1 M . O TYP. 1 W M . O W C . O W W Y.C WW .100Y TW ARE VIEWED FROM TERMINALS .TW WW .100Y.C M.TW +.002 (.05) W M.SCHEMATICS 100 DIMENSIONS M . O W ARE SHOWN IN INCHES (MILLIMETERS) O .017 (.43) DIA. W O –.001 (.03) W WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW O WW 00Y.CO .TW W WW 00Y.CO .TW C . W W W Y W W M .1 .T 00 W.1 Y.COM W WW 00Y.CO .TW W.1 Y.COM W W W W 0 W .T 0 W MLOGIC INTERFACE .1 TYPICAL .T 00 W.1 Y.COM W Note 5) WW 00Y.CO (See W.1 Y.COM W W W W .TW 0 W T . 1 0 0 W T M . . 1 0 M . GENERAL NOTES O W O W OM W.1 Relay W .C 0Y.C M.TW contacts willW exhibit no chatter transfer in WW Yof.C10 µsec .or 0 0 WW in excess T 1 0 WW 1..1excess T . . 1 00Y of 1 M OM W. Oµsec. WW 00Y.CO .TW W .Cand Wavailable W .Ccharacteristics Y W W 0 are based on data are best estimates. Y W T . 0 0 WW 2. .“Typical” T .1 10on-goingOverification W.1 Y.COM W M. OM W No tests are performed. W W C . W C W . Y W .T 00 W are intial 0Yotherwise WW3. Unless .TW parameters .100values.OM.T W.1 Y.COM W Mspecified, .10Reference W O W W C 4. For Only. Coil resistance not directly measurable on 732TN relays. . W .C Y W WValues .TW relay WW M.T .100 .TW 100 are forO732TN-5 00isYtypical for 5. Circuit all Series 732TN. shown M . O 1 W M . W C . O W applyYfor.Cfull temperature C W range.LimitW base-emitter to.T 15W mADC. WW .100Y 0Y.current 0 W6.Wand M.T .TW relays willW 10with 0otherwise M . O 1 Unless specified, be supplied either gold-plated or W M . O W O W WW .100Y.C M.TW solder-coated leads. WW .100Y.C M.TW 0Y.C WW TW . 0 1 M . O on the 7. TheW slash and characters appearing after the slash not.C marked O WW 00Y.CO .TW WW are C W . Y W W W 0 Y W T relay. . W M .1 .T 00 M .10 8. WW 00Y.CO .TW W.1 Y.COM W WW 00Y.CO .TW W W W W M .1 .T 00 W.1 Y.COM W WW 00Y.CO .TW W.1 Y.COM W W W W W .T 1 00 W M .1Numbering Teledyne Part System M.T .100 OM for Commercial RelaysWW. W .CO .TW O W C . Y W C W . 0 Y W W W 0 0 Y W T W M .1 .T 00 M/. S Q .10 X M -O26 W732 WW 00Y.CO .TW W.1 Y.COM W C . W W Y W W W .T W .100 W.1 Y.COM W M.T .100 OM W O W W C . W C W Y W .T W 00 W WW .100Y. M Q=.1Solder Coated Leads M.T .100 OLeads W M.T O W C . O W W C G= Gold Plated W . Y W (Notes WW .100Y .TW Relay Series 1060and 7) OM.T WW .100Y.C M.TW . M W O W O W W Y.C Optional Ground WWS= 0.187" WPin W 00leads Y.C WW .100Y.C M.TW 1 0 W T M.T . . 0 O 1 (See Appendix ) W M . (Note 7) O W C WW .100Y. WW 00Y.CO .TW .TW WW .100Y.C M.TW Pad Option W M O 1 W Coil Voltage M . O W O (See Appendix) WW WW .100Y.C M.TW W Y.C WW .100Y.C M.TW 0 W T . 0 O W O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW O W O W O W WW .100Y.C M.TW WW .100Y.C M.TW WW .100Y.C M.TW O WW 00Y.CO .TW W WW 00Y.CO .TW C . W W W Y W W M .1 .T 00 W.1 Y.COM W WW 00Y.CO .TW W.1 Y.COM W W W W W .T 00 W W.1 Y.COM W M.T .100 W.1 Y.COM W O W W W C . W .T W 00 W WW .100Y M.T .100 W.1 Y.COM M.T O W O W W C . W W WW .100Y WW .100Y.C M.TW M.T .100 M.T O W O W C . O W W Y W WW .100Y.C M.TW WW .100Y.C M.TW .100 W O W O W WW WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C WW .100Y.C M.TW W O W WW WW .100Y.C M.TW O W WW .100Y.C M.TW O W WW .100Y.C Vcc Vr Pin 1 Notes: Logic 1 activates the relay. Logic 0 de-activates the relay. Vcc = logic bias power. Vr = coil energization voltage. Logic element 1 = 0.24 to 1.50mA 0 = 0.3Vdc min. Pin 10 Pin 9 CENTIGRID® AND TO-5