DATASHEET
EPC1007
EPC1007 – Enhancement Mode Power Transistor
VDSS , 100 V
RDS(ON) , 30 mW
ID , 6 A
EFFICIENT POWER CONVERSION
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
Maximum Ratings
Drain-to-Source Voltage
VDS
ID
VGS
TJ
TSTG
100
Continuous (TA = 25˚C, θJA = 90)
6
25
Gate-to-Source Voltage
6
Gate-to-Source Voltage
-5
Operating Temperature
-40 to 125
Storage Temperature
-40 to 150
PARAMETER
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
V
Pulsed (25˚C, Tpulse = 300 µs)
EPC Power Transistors are supplied only in
passivated die form with solder bumps
A
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra low QG
• Ultra small footprint
V
˚C
TEST CONDITIONS
MIN
100
TYP
MAX
UNIT
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 75 µA
IDSS
Drain Source Leakage
VDS = 80 V, VGS = 0 V
V
20
60
µA
Gate-Source Forward Leakage
VGS = 5 V
.25
2
Gate-Source Reverse Leakage
VGS = -5 V
0.1
0.5
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1.2 mA
1.4
2.5
V
RDS(ON)
Drain-Source On Resistance
VGS = 5 V, ID = 6 A
24
30
mΩ
IGSS
0.7
mA
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
CISS
Input Capacitance
200
VDS = 50 V, VGS = 0 V
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
10
QG
Total Gate Charge (VGS = 5 V)
2.7
QGD
Gate-to-drain Charge
VDS = 50 V, ID = 6 A
110
pF
1
QGS
Gate-to Source Charge
QOSS
Output Charge
8
QRR
Source-Drain Recovery Charge
0
0.75
nC
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C
1.8
IS = 0.5 A, VGS = 0 V, T = 125˚C
1.75
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
V
| PAGE 1
DATASHEET
EPC1007
Figure 1: Typical Output Characteristics
Figure 2: Transfer Characteristics
18
VGS = 5
VGS = 4
VGS = 3
VGS = 2
25˚C
125˚C
16
14
ID Drain Current (A)
ID Drain Current (A)
20
15
10
VDS = 3V
12
10
8
6
4
5
2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VDS – Drain to Source Voltage (V)
1.6
1.8
0
2
.5
Figure 3: RDS(ON) vs VG for Various Current
RDS(ON) – Drain to Source Resistance (mΩ)
RDS(ON) – Drain to Source Resistance (mΩ)
60
50
40
30
ID = 4 A
ID = 6 A
ID = 10 A
ID = 20 A
10
0
2.5
3
3.5
4
4.5
5
2.5
3
3.5
4
4.5
VGS – Gate to Source Voltage (V)
25˚C
125˚C
80
ID = 6 A
70
60
50
40
30
20
10
Figure 5: Capacitance
3
3.5
4
4.5
5
5.5
1.5
2
2.5
3
VGS – Gate to Source Voltage (V)
Figure 6: Gate Charge
5
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
ID = 6 A
VDS = 50 V
4.5
VGS – Gate to Source Voltage (V)
0.3
0.25
C – Capacitance (nF)
2
VGS – Gate to Source Voltage (V)
90
0
2.5
5.5
0.35
0.2
0.15
0.1
0.05
0
1.5
Figure 4: RDS(ON) vs VG for Various Temperature
70
20
1
4
3.5
3
2.5
2
1.5
1
0.5
0
10
20
30
40
50
60
70
VDS – Drain to Source Voltage (V)
80
90
100
0
0
0.5
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
1
QG – Gate Charge (nC)
| PAGE 2
DATASHEET
EPC1007
Figure 7: Reverse Drain-Source Characteristics
1.6
100
10-1
10-2
0
0.5
1
1.5
2
2.5
3
VSD – Source to Drain Voltage (V)
1.4
1.3
1.2
1.1
1
0.9
0.8
-20
3.5
Figure 9: Normalized Threshold Voltage
.03
1
0.9
0.8
0.7
0.6
0
20
40
60
80
100
120
TJ – Junction Temperature ( ˚C )
140
Figure10: Gate Current
25˚C
125˚C
.025
IG – Gate Current (A)
Normalized Threshold Voltage
ID = 6 A
VGS = 5 V
1.5
Normalized On-State Resistance – RDS(ON)
25˚C
125˚C
101
ISD – Source to Drain Current (A)
Figure 8: Normalized On Resistance Vs Temperature
.02
.015
.01
.005
ID = 1.2 mA
0.5
-20
0
20
40
60
80
100
120
TJ – Junction Temperature ( ˚C )
0
140
0
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
TAPE AND REEL CONFIGURATION
4mm pitch, 8mm wide tape on 7” reel
b
e
d
f
g
Loaded Tape Feed Direction
7” reel
a
Die
orientation
dot
c
Gate Pad
bump is
under this
corner
Die is placed into pocket
bump side down
(face side down)
EPC1007
Dimension (mm) target min
a
b
c (see note)
d
e
f (see note)
g
8.00
1.75
3.50
4.00
4.00
2.00
1.5
7.90
1.65
3.45
3.90
3.90
1.95
1.5
max
8.30
1.85
3.55
4.10
4.10
2.05
1.6
Note: Pocket position is relative to the sprocket hole
measured as true position of the pocket, not the pocket hole
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
| PAGE 3
DATASHEET
EPC1007
DIE MARKINGS
1007
YYYY
Die orientation dot
ZZZZ
Gate Pad bump is
under this corner
Laser Markings
Part
Number
Part #
Marking Line 1
Lot_Date Code
Marking line 2
Lot_Date Code
Marking Line 3
1007
YYYY
ZZZZ
EPC1007
DIE OUTLINE
Bottom View
DIM MIN 1672 1057 834 327 235 248 400 SEATING PLANE
75 +/- 20
(685)
Side View
MAX 1732 1117 840 333 265 252 400 795 Max
A B c d e f g MICROMETERS Nominal 1702 1087 837 330 250 250 400 1702
RECOMMENDED
LAND PATTERN
280
(measurements in µm)
3
4
5
507
787
1087
1
2
200
200
X3
400
400
X2
Pad no. 1 is Gate;
Pads no. 3 and 5 are Drain;
Pads no. 2 and 4 are Source.
Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to
improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 |
Information subject to
change without notice.
Revised April, 2010
| PAGE 4