DATASHEET EPC1007 EPC1007 – Enhancement Mode Power Transistor VDSS , 100 V RDS(ON) , 30 mW ID , 6 A EFFICIENT POWER CONVERSION Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings Drain-to-Source Voltage VDS ID VGS TJ TSTG 100 Continuous (TA = 25˚C, θJA = 90) 6 25 Gate-to-Source Voltage 6 Gate-to-Source Voltage -5 Operating Temperature -40 to 125 Storage Temperature -40 to 150 PARAMETER Applications • High Speed DC-DC conversion • Class D Audio • Hard Switched and High Frequency Circuits V Pulsed (25˚C, Tpulse = 300 µs) EPC Power Transistors are supplied only in passivated die form with solder bumps A Benefits • Ultra High Efficiency • Ultra Low RDS(on) • Ultra low QG • Ultra small footprint V ˚C TEST CONDITIONS MIN 100 TYP MAX UNIT Static Characteristics (TJ= 25˚C unless otherwise stated) BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 75 µA IDSS Drain Source Leakage VDS = 80 V, VGS = 0 V V 20 60 µA Gate-Source Forward Leakage VGS = 5 V .25 2 Gate-Source Reverse Leakage VGS = -5 V 0.1 0.5 VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1.2 mA 1.4 2.5 V RDS(ON) Drain-Source On Resistance VGS = 5 V, ID = 6 A 24 30 mΩ IGSS 0.7 mA Dynamic Characteristics (TJ= 25˚C unless otherwise stated) CISS Input Capacitance 200 VDS = 50 V, VGS = 0 V COSS Output Capacitance CRSS Reverse Transfer Capacitance 10 QG Total Gate Charge (VGS = 5 V) 2.7 QGD Gate-to-drain Charge VDS = 50 V, ID = 6 A 110 pF 1 QGS Gate-to Source Charge QOSS Output Charge 8 QRR Source-Drain Recovery Charge 0 0.75 nC Source-Drain Characteristics (TJ= 25˚C unless otherwise stated) VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V, T = 25˚C 1.8 IS = 0.5 A, VGS = 0 V, T = 125˚C 1.75 EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | V | PAGE 1 DATASHEET EPC1007 Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics 18 VGS = 5 VGS = 4 VGS = 3 VGS = 2 25˚C 125˚C 16 14 ID Drain Current (A) ID Drain Current (A) 20 15 10 VDS = 3V 12 10 8 6 4 5 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VDS – Drain to Source Voltage (V) 1.6 1.8 0 2 .5 Figure 3: RDS(ON) vs VG for Various Current RDS(ON) – Drain to Source Resistance (mΩ) RDS(ON) – Drain to Source Resistance (mΩ) 60 50 40 30 ID = 4 A ID = 6 A ID = 10 A ID = 20 A 10 0 2.5 3 3.5 4 4.5 5 2.5 3 3.5 4 4.5 VGS – Gate to Source Voltage (V) 25˚C 125˚C 80 ID = 6 A 70 60 50 40 30 20 10 Figure 5: Capacitance 3 3.5 4 4.5 5 5.5 1.5 2 2.5 3 VGS – Gate to Source Voltage (V) Figure 6: Gate Charge 5 COSS = CGD + CSD CISS = CGD + CGS CRSS = CGD ID = 6 A VDS = 50 V 4.5 VGS – Gate to Source Voltage (V) 0.3 0.25 C – Capacitance (nF) 2 VGS – Gate to Source Voltage (V) 90 0 2.5 5.5 0.35 0.2 0.15 0.1 0.05 0 1.5 Figure 4: RDS(ON) vs VG for Various Temperature 70 20 1 4 3.5 3 2.5 2 1.5 1 0.5 0 10 20 30 40 50 60 70 VDS – Drain to Source Voltage (V) 80 90 100 0 0 0.5 EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | 1 QG – Gate Charge (nC) | PAGE 2 DATASHEET EPC1007 Figure 7: Reverse Drain-Source Characteristics 1.6 100 10-1 10-2 0 0.5 1 1.5 2 2.5 3 VSD – Source to Drain Voltage (V) 1.4 1.3 1.2 1.1 1 0.9 0.8 -20 3.5 Figure 9: Normalized Threshold Voltage .03 1 0.9 0.8 0.7 0.6 0 20 40 60 80 100 120 TJ – Junction Temperature ( ˚C ) 140 Figure10: Gate Current 25˚C 125˚C .025 IG – Gate Current (A) Normalized Threshold Voltage ID = 6 A VGS = 5 V 1.5 Normalized On-State Resistance – RDS(ON) 25˚C 125˚C 101 ISD – Source to Drain Current (A) Figure 8: Normalized On Resistance Vs Temperature .02 .015 .01 .005 ID = 1.2 mA 0.5 -20 0 20 40 60 80 100 120 TJ – Junction Temperature ( ˚C ) 0 140 0 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) TAPE AND REEL CONFIGURATION 4mm pitch, 8mm wide tape on 7” reel b e d f g Loaded Tape Feed Direction 7” reel a Die orientation dot c Gate Pad bump is under this corner Die is placed into pocket bump side down (face side down) EPC1007 Dimension (mm) target min a b c (see note) d e f (see note) g 8.00 1.75 3.50 4.00 4.00 2.00 1.5 7.90 1.65 3.45 3.90 3.90 1.95 1.5 max 8.30 1.85 3.55 4.10 4.10 2.05 1.6 Note: Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | | PAGE 3 DATASHEET EPC1007 DIE MARKINGS 1007 YYYY Die orientation dot ZZZZ Gate Pad bump is under this corner Laser Markings Part Number Part # Marking Line 1 Lot_Date Code Marking line 2 Lot_Date Code Marking Line 3 1007 YYYY ZZZZ EPC1007 DIE OUTLINE Bottom View DIM MIN 1672 1057 834 327 235 248 400 SEATING PLANE 75 +/- 20 (685) Side View MAX 1732 1117 840 333 265 252 400 795 Max A B c d e f g MICROMETERS Nominal 1702 1087 837 330 250 250 400 1702 RECOMMENDED LAND PATTERN 280 (measurements in µm) 3 4 5 507 787 1087 1 2 200 200 X3 400 400 X2 Pad no. 1 is Gate; Pads no. 3 and 5 are Drain; Pads no. 2 and 4 are Source. Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2011 | Information subject to change without notice. Revised April, 2010 | PAGE 4