SEMICONDUCTOR
DESIGN GUIDE
Hind Rectifiers Ltd
ISO 9001-2000
Contents
Page no.
► Rectifier Diodes
1) Top Hat Type
2) Capsules and
Fast Recovery Diode
3) Modules (Isolated Base)
a) Diode-Diode Modules
b) Single Phase Bridge
c) Three Phase Bridge
1
3
5
5
5
► Phase Control Thyristors
1) Top Hat Type
2) Capsules
3) Modules(Isolated base)
7
9
11
► Fast Turn-off Thyristors
1) Top Hat Type
2) Capsules - Center gate
3) Capsules - Distributed gate
13
13
13
► Power Stacks
1) Thyristor Stack (B6C)
2) Diode Stacks (B6U)
15
15
► Special Products
1) H.V.Disks
2) Water Cooled Assemblies
3) Press Fit Diode Stacks
► IGBT Stacks
17
17
17
19
Rectifier Diodes
Top Hat Type
VRRM
×100 V
Type
[V]
SXHN6
SXHN14
SXHN16
SXHN20
SXBN26
SXHN26
SXHN41
SXHN55
SXBR71
SXHNS100
SXHNS150
SXHBN150
SXHNS201
SXHBN200
SXHNS250
SXHN250
SXHN300
SXHNS320
SXHN350
SXHFN350
SXHN400
SXHFN400
SXHN550
SXHN680
SXHN860
2 - 15
2 - 18
2 - 30
2 - 20
If(av) / Tc
[A]
6
12
16
20
25
25
40
55
70
100
150
150
200
200
250
250
300
320
350
350
400
400
550
680
860
[°C]
130
130
130
130
130
130
130
125
125
130
130
130
130
130
130
130
130
125
125
125
125
125
100
90
100
Ifrms
[A]
9.5
19
25
32
40
63
86
110
160
200
200
300
300
392
392
471
500
430
430
628
628
865
1070
1350
IFSM
10 mS
Tj max
I2t
10mS
Vpk /Ipk
at Tjmax
Vo
r
[A]
200
250
300
350
375
400
500
800
1000
2400
3600
3600
4000
4000
5000
5000
5200
5500
6000
6000
7000
7000
12500
14000
16000
[kA2sec]
0.200
0.312
0.450
0.612
0.703
0.800
1.250
3.200
5.000
28.800
64.800
64.800
80.000
80.000
125.000
125.000
1303.000
151.000
180.000
180.000
245.000
245.000
781.000
980.000
1280.000
[V] [A]
1.30 20
1.50 38
1.55 50
1.50 63
1.45 78
1.25 78
1.25 125
1.35 172
1.35 220
1.30 300
1.25 470
1.25 470
1.30 630
1.30 630
1.30 785
1.30 785
1.20 1000
1.40 1000
1.15 1050
1.15 1050
1.12 1500
1.12 1500
1.65 1500
1.55 2100
1.48 2500
[V]
0.70
0.77
0.82
0.90
0.80
0.80
0.72
0.72
0.77
0.80
0.75
0.75
0.70
0.70
0.75
0.75
0.72
0.77
0.75
0.75
0.75
0.75
0.85
0.80
0.74
[mΩ]
16.50
11.00
8.30
10.00
10.00
4.25
3.60
2.75
2.00
1.22
0.90
0.90
0.60
0.60
0.56
0.56
0.40
0.57
0.36
0.36
0.35
0.35
0.50
0.33
0.20
(j-c)
Rth
(c-h)
[°C/W]
4.500 0.60
2.10 0 0.60
1.50 0 0.25
1.30 0 0.25
1.10 0 0.25
1.000 0.25
0.750 0.25
0.500 0.15
0.400 0.15
0.360 0.05
0.240 0.05
0.240 0.05
0.240 0.05
0.240 0.05
0.180 0.05
0.180 0.05
0.16 0 0.05
0.14 0 0.05
0.140 0.05
0.12 0 0.02
0.120 0.05
0.110 0.02
0.072 0.02
0.070 0.02
0.070 0.20
Tjmax
Fig.No
[°C]
180
160
180
TD1
TD1
TD1
TD1
TD2
TD3
TD3
TD3
TD3
TD4
TD4
TD5
TD4
TD5
TD7
TD6
TD6
TD7
TD6
TD8
TD6
TD8
TD9
TD9
TD9
* for further details refer individual datasheets @ www.hirect.com
TD1
TD3
TD2
10.0
Ø2
Ø16
4
Ø8.2
Ø5.5
N
R
R
N
135 ±10
17 A/F
M6x1 P. ROLLED THREAD
1
N
45 ±5
11 A/F
11.0
11
11 A/F
M6x1 P. ROLLED THREAD
N
R
158 ±10
R
45 ± 5
N
21
N
11
R
R
M8 X 1.25P ROLLED THREAD
Rectifier Diodes
19
TD5
10
19
R
10.5
N
N
R
R
N
177±5
185±5
N
65
65
R
10
Ø10
10.5
10
TD4
21
27 A/F
Ø38
Ø40
M16x1.5P ROLLED THREAD
TD6
TD7
R
22
Ø1
11
.5
0.5
N
R
R
N
240 ±5
N
N
85.5
80 ±5
240±5
R
Ø10
11
1.1 1.1
22
20 ±0.5
32 A/F
Ø38
Ø40
M20x1.5P ROLLED THREAD
TD8
TD9
26
Ø11
14
22
18
11 11
Ø11
R
N
N
25
121± 5
90 ±5
245 ±5
R
260 ±10
R HFN
N
8.6
X
04 HOLES
Ø11
46SQ
60SQ
27
9.5x4 HOLES
46SQ
61SQ
2
Rectifier Diodes
Capsules
Type
SHXC450
SHXC540
SHXC760
SHXC1130
SHXC1850
SHXC2230
SHXXC2300
SHXXC2500
SHXXC6400
VRRM
×100 V
If(av) / Tc
Ifrms
IFSM
10 mS
Tj max
[V]
[A] [°C]
[A]
[A]
2 - 18
2-6
2 - 18
2-6
2 - 44
2 - 26
2-6
450
540
760
1130
1850
2230
2300
2500
6400
95
700
91
850
104 1200
65 1775
63 2900
109 3500
71 3600
90 3925
85 10048
4900
6000
8500
11000
20500
25000
26000
26000
55000
I2t
[kA2sec]
120
180
361
605
2100
3125
3380
3380
15125
Vpk /Ipk
at Tjmax
Vo
r
[V]
[A]
[V]
[mΩ]
1.52
1.85
1.39
1.83
1.44
1.10
1.70
1.30
0.88
1500
1600
2000
3000
3000
3000
3000
3000
4500
0.70
0.75
0.70
0.78
0.74
0.70
0.88
0.87
0.70
0.700
0.650
0.300
0.350
0.200
0.100
0.245
0.127
0.040
(j-c)
Rth
(c-h)
[°C/W]
0.112 0
0.0900
0.0790
0.0450
0.0380
0.0255
0.0170
0.0220
0.0170
0.015
0.015
0.015
0.015
0.005
0.005
0.005
0.004
0.005
Tjmax
Fig No
[°C]
160
150
190
CD1
CD1
CD1
CD2
CD3
CD3
CD4
CD5
CD6
Tjmax
Fig No
170
180
160
180
Fast Recovery Diode
Type
HD368SXX
VRRM
×100
If(av) / Tc
Ifrms
IFSM
10 mS
Tj max
[V]
2 - 14
[A] [ 0C]
368 100
[A]
730
[A]
5200
I2t
Vpk /Ipk
at Tjmax
[kA2sec]
[V] [A]
2.25 1400
135.20
* for further details refer individual datasheets @ www.hirect.com
3
Vo
r
[V]
[mΩ]
0.80
1.00
0
Rth
(j-c)
(c-h)
[°C/W]
0.015
0.08
[°C]
150
CD1
Rectifier Diodes
CD2
Ø3.6x19=2HOLES
ANODE
Ø3.6x19=2HOLES
0.8
K
1.3
Ø42
Ø25
14.15-15.1
CATHODE
0.8
Ø42
Ø19
0.8
CATHODE
13.1/14.1
CD1
K
ANODE
A
A
25°
20°
CD4
CD3
Ø74
Ø 47
25.9/27.7
CATHODE
26±1
CATHODE
Ø58.5
Ø34
K
ANODE
Ø3.6x19=2 HOLES
K
A
3.6X3 DEPTH
2 HOLES
ANODE
A
20°
CD6
Ø77
Ø48
ANODE
Ø60
Ø56
Ø44
26±4
CATHODE
8±1
CD5
CATHODE
ANODE
Ø3.5x1.5DEPTH
Ø3.5x 2DEPTH
K
K
A
A
4
Diode Modules
Diode- Diode Modules - Isolated base
Type
VRRM
×100
[V]
HDD25N
HDD56N
HDD95N
HDD100N
HDD170N
HDD250N
HDD350N
2 - 18
If(av) / Tc
[A] [°C]
25 100
55 100
95 100
100 100
170 100
250 100
350 100
Ifrms
Ifrms
2
10ms
@ Tjmax
It
[kA2sec]
1.25
9.80
21.00
31.25
157.00
344.00
605.00
[A] [k A]
40 0.50
85 1.15
150 2.10
165 2.50
270 5.60
395 8.30
550 11.00
Vpk / Ipk
at 25°C
Vo
[V] [A]
80
175
300
325
535
785
1100
0.85
0.85
0.91
0.80
0.77
0.70
0.75
1.40
1.40
1.45
1.30
1.25
1.40
1.45
r
[mΩ]
[V]
6.00
4.00
1.86
1.50
0.80
0.68
0.40
Rth(J-C)
/chip
Rth(C-H)
/module
Tjmax
[°C/W]
[°C/W]
0.10
0.10
0.10
0.10
0.03
0.02
0.02
[°C]
1.00
0.50
0.39
0.39
0.26
0.17
0.13
Fig No
150
DD1
DD1
DD1
DD1
DD2
DD3
DD3
Fig No
Single Phase bridges (Isolated base)
Type
MB35
HB62
HB82
VRRM
×100
IDC/Tc
Ifrms
10ms
Tjmax
[V]
[A] [°C]
[A]
2 - 12
30 67
50 85
80 85
550
750
Vo
r
Rth(J-C)
/Diode
Rth(C-H)
/bridge
Tjmax
[V]
[mΩ]
[°C/W]
[°C/W]
[°C]
0.8
8
8
6
5.40
1.93
1.60
1.350
0.310
0.483
150
DB1
DB3
DB3
Vpk /Ipk
at 25°C
Vo
r
Rth(J-C)
/Diode
Rth(C-H)
/bridge
Tjmax
Fig No
[V]
[V]
[mΩ]
[°C/W]
[°C/W]
[°C]
0.8
7.5
8.0
5.0
3.0
8.40
1.87
1.52
0.83
1.400
0.310
0.253
0.140
150
150
150
150
It
2
Vpk /Ipk
at 25°C
[kA2sec]
1.25
9.80
2.80
[V] [A]
1.30 50
1.50 75
1.50 125
2
Three phse bridge (Isolated base)
Type
HD35
HD62
HD82
HD162
VRRM
×100
IDC/Tc
Ifsm
10ms
Tjmax
[V]
[A] [°C]
[A]
2 - 12
35 62
63 100
82 100
160 100
550
550
750
1800
It
[kA2sec]
1.50
1.52
2.18
16.20
[A]
1.7
1 .50
1 .30
1.55
* for further details refer individual datasheets @ www.hirect.com
5
75
75
185
DB2
DB3
DB3
DB4
Diode Modules
DD1
DD2
M6 PHILIPS SCREW 3 NOS.
5
30
30
M5 X 10 PHILIPS SCREW 3 NOS.
Ø 6.5x2 HOLES
TE-5115
24
34
2
20
1
34
Ø 6.5 X2 HOLES
3
20
26
23
23
80
24
80
92
94
DB1
DD3
DB2
6.3
0.8
22
10
51.5
7.5
30
48
6.3
0.8
22
M8X3 NOS.
10
20
Ø 5.2
Ø 5.2
80
~
35
92.5
41
118
DB3
-
~
~
+
+
24.2
24.2
28.5
28.5
30
37
DB4
~
+
~
-
23
60
72
27
42
~
20
21.6
20
~
27
~
+
~
-
21.6
13
~
28.5
24.2
16
3
2
38
50
22.5
1
~
28.5
242
16
-
25
80
94
6
Phase Control Thyristors
Top Hat Type
Type
VDRM / VRRM
×100
IT(av)/Tc
Itrms
Vpk / Ipk
at Tjmax
[V]
[A] [°C]
[A]
[V]
[A]
2.05
1.72
1.72
1.82
1.87
1.75
2.00
1.80
1.76
1.75
1.70
1.65
1.65
1.45
1.60
1.35
53
100
150
175
200
265
400
470
550
785
1000
1000
1100
1260
1570
2000
H16TL/TB
H30TL/TB
H45TB
H55TB
H65TB
H85TB
H125TB
H150TB
H175TB
H250TB
H285TB
H300TB
H350TB
H400TB
H500TB
H650TB
16
30
45
55
65
85
125
150
175
250
285
300
350
400
500
650
2 - 15
2 - 16
2 - 15
2 - 16
2 - 16
2 - 18
2 - 60
2 - 16
2 - 60
85
85
85
75
75
85
70
70
85
78
82
85
85
85
75
70
25
50
70
85
100
135
195
235
275
392
450
470
550
628
785
1020
Itsm
10m
Tjmax
Vo
[kA2sec]
[kA]
[V]
[mΩ]
[°C/W]
0.61
1.25
3.20
4.05
5.00
13.60
31.00
45 .00
106 .00
106 .00
211.00
281.00
320 .00
500 .00
720 .00
980 .00
0.35
0.50
0.80
0.90
1.00
1.65
2.50
3.00
4.60
4.60
6.50
7.50
8 .00
10.00
12.00
14.00
1.10
0.95
0.95
0.90
0.87
1.20
1.20
0.90
1.08
0.92
0.80
1.04
0.80
0.90
0.90
1.00
16.00
6.40
4.50
4.35
4.10
2.60
1.90
1.80
1.30
0.99
0.75
0.61
0.50
0.40
0.35
0.12
1.400 0.300
0.930 0.300
2
It
r
(j-c)
Rth
(c-h)
Tjmax
[°C]
0.600 0.200
0.500
0.270
0.245
0.234
0.135
0.120
0.113
0.200
0.080
0.080
0.080
0.040
0.040
0.050
125
0.080 0.02 0
0.076 0.015
0.070 0.015
* for further details refer induvidual datasheets @ www.hirect.com
TH1B
TH1A
6.5
Ø12
Ø
4 Ø7
3
Ø 6.3
G
K
160 ±5
K
180 ±5
30
Ø4
A
14 A/F
11
11
A
14 A/F
1/4"-28unf rolled thread
TH3
170± 5
K
190±5
G
Ø8
Ø 8.3
G
K
A
16
.5
Ø8
55
A
Ø4
165±5
Ø16
Ø7
Ø4
175 ±5
TH2
1/4"-28unf rolled thread
10
G
1/4” unf
7
27 A/F
21
11
TE-5585
17 A/F
Fig No
½”,20UNF
TH1-A/B
TH1-A/B
TH2
TH2
TH2
TH3
TH4
TH5
TH6
TH6
TH6
TH7
TH7
TH8
TH8
TH9
Phase Control Thyristors
.5
TH5
G
19 MAX
Ø4
Ø8
0
Ø1
177±5
100±5
K
180±5
K
175±5
G
10
10
10
0
Ø1
Ø4
10
+0
19
Ø8
165±5
TH4
A
55
A
27 A/F
21
21
27 A/F
1/2",20 UNF,2A THREADS
1/2", 20 UNF
TH6
Ø8
Ø4
TH7
22
Ø11
11
Ø8
190±5
Ø4
1
Ø1
11
22
G
A
K
260 ±5
K
232 ±5
G
21
165 ±5
80 ±5
A
TH8
TH9
Ø4
Ø4
Ø8
18
268 ±5
G
125 ±5
232 ±5
A
46 SQ
60 SQ
Ø 8.5x4 HOLES
K
260 ±10
K
A
135± 5
Ø8
27 Ø13.5
1
Ø1
14
26
G
46SQ
60 max.sq.
Ø 8.4 X 4 HOLES
3/4" UNF
13 13
33 A/F
46 SQ
60 SQ
fTechnic|b0|i0|c2|p2;20°
8
Phase Control Thyristors
Capsules
Type
H445CH
H507CH
H955CH
H1450CH
H1500CH
H1590CH
H1800CH
H2000CH
H2900CH
H3200CH
H4350CH
VDRM /
VRRM
IT(av)/Tc
[V]
[A] [°C]
2 - 16
2 - 14
2 - 16
2 - 28
2 - 18
2 - 60
2 - 20
2 - 18
2 - 25
2 - 20
2 - 14
445
507
955
1450
1500
1590
1800
2000
2900
3200
4350
69
85
64
82
63
65
54
73
78
68
85
Itrms
[A]
700
1500
2280
2355
2500
2830
3140
4550
5000
6829
Vpk /Ipk
at Tjmax
[V]
[A]
2.07 1200
1.92 1600
2.00 3000
1.55
1.37
1.68
1.45
1.42
1.30
1.18
3000
3000
3000
3000
3000
3000
4000
I2t
Vo
r
Tjmax
[kA2sec]
106
320
781
4500
2420
2000
2880
6480
7683
12701
18000
* for further details refer induvidual datasheets @ www.hirect.com
9
Itsm
10mS
(j-c)
Rth
(c-h)
[kA]
[V]
[mΩ]
[°C/W]
4.60
8.00
12.50
30.00
22.00
20.00
24.00
36.00
39.20
50.40
60.00
0.85
0.80
0.85
0.97
0.84
1.00
1.05
0.82
0.85
0.95
0.88
0.900
0.600
0.350
0.270
0.195
0.100
0.185
0.180
0.175
0.127
0.075
0.0680 0.015
0.0530 0.015
0.0380 0.005
0.0150 0.005
0.0265 0.005
0.0330 0.005
0.0210 0.005
0.0150 0.005
0.0090 0.002
0.0090 0.002
0.0095 0.002
Tjmax
Fig No
[°C]
125
140
125
CH1
CH2
CH3
CH4
CH4
CH3
CH4
CH4
CH5
CH5
CH6
Phase Control Thyristors
CH2
25
G
Ø3.6x19=2HOLES
0.8
ANODE
1.3
Ø42
0.8
25
CATHODE
GATE
GATE
14±0.5
Ø42
0.8
CATHODE
13.1/14.1
CH1
ANODE
K
G
A
Ø3.6x19=2HOLES
K
A
20°
20°
CH4
CH3
CATHODE
Ø74
Ø47
GATE
GATE
0.8
26±1
27±0.5
0.8
CATHODE
Ø58.5
Ø34
ANODE
G
Ø3.6x3=2 HOLES
Ø3.6x19=2 HOLES
ANODE
K
G
CATHODE
20°
CH5
A
20°
A
K
CH6
CATHODE
Ø101
Ø73
Ø119
GATE
GATE
0.8
35±2
26±1
0.8
Ø80
ANODE
ANODE
K
G
A
K
20°
A
20°
G
10
Thyristors Modules
Modules (Isolated Base)
Type
VDRM / VRRM
×100
IT(av) / Tc
Itrms
[V]
[A] [°C]
[A]
40
65
85
120
140
180
205
255
265
395
HTT/HTD25N
HTT/HTD40N
HTT/HTD55N
HTT/HTD76N
HTT/HTD90N
HTT/HTD116N
HTT/HTD132N
HTT/HTD162N
HTT/HTD170N
HTT/HTD250N
25
40
55
75
90
116
130
162
170
250
2 - 18
85
85
85
85
85
85
85
85
85
85
Vpk /Ipk
at Tjmax
[V]
1.80
1.80
1.60
1.60
1.60
1.75
1.50
1.50
1.54
1.55
I 2t
[A] [kA2sec]
80
1.06
2.45
125
7.81
175
235 10.51
300 14.45
300 24.00
410 51.20
500 96.80
550 106.00
800 245.00
Itsm
10m
@T
jmax
Vo
[kA]
0.46
0.70
1.25
1.45
1.70
2.20
3.20
4.40
4.60
7.00
[V]
1.00
0.88
0.90
0.82
0.84
0.80
0.85
0.85
0.95
0.80
Itsm
10mS
Tjmax
IGT
VGT
Rth(J-C) Rth(C-H)
/chip /module
r
[mΩ] [°C/W] [°C/W]
11.00 0.92
0.10
5.80 0.69
0.10
3.50 0.55
0.10
2.60 0.39
0.10
2.10 0.38
0.10
0.10
2.40 0.22
1.50 0.23
0.03
0.95 0.20
0.03
1.00 0.17
0.02
0.70 0.13
0.02
Tjmax
Fig No
[°C]
TT1
TT1
TT1
TT1
TT1
TT1
TT2
TT2
TT3
TT3
125
130
125
3 Thyristor Modules (Non-Isolated Base)
Type
VDRM / VRRM
×100
IT(av) / Tc
Itrms
[V]
[A] [°C]
[A]
2-4
80 116
130 112
200 121
125
204
314
H3T80N
H3T130N
H3T200N
Vpk /Ipk
I2t
0
at 25 C
[V]
[A]
1.20 240
1.20 410
1.20 630
[kA2sec]
26
51
145
Rth(J-C) Rth(C-H)
/chip /module
[KA]
[mA]
[ V]
2.28
3.20
5.40
150
2.00
Itsm
10mS
Tjmax
Vo
r
Rth(J-C) Rth(C-H)
/chip /module
[°C/W] [°C/W]
[°C/W] [°C/W]
0.35
0.03
0.03
0.20
0.12
0.03
Tjmax
Fig No
[°C]
TT4
TT4
TT5
Single Phase Half Controlled Bridge
Type
VDRM / VRRM
×100
IT(av) / Tc
Itrms
Vpk /Ipk
at Tjmax
[V]
[A] [°C]
[A]
[V]
40
28
1.45 45
HCH40
8 - 12
85
I2t
[A]
[kA2sec]
0.5
[kA]
[V]
[mΩ]
320
0.85
13.00
1.15
0.20
Tjmax
Fig No
[°C]
125
TT6
High Voltage modules (Isolated Base)
Type
HTT70N
HTT100N
HTT165N
VDRM /
VRRM
×100
IT(av) / Tc
Itrms
[V]
[A] [°C]
[A]
2 - 24
70 85
100 85
165 85
110
157
259
2 - 22
Vpk /Ipk
0
at 25 C
[V]
[A]
1.65 320
1.74 300
1.36 300
I2t at
450C
Itsm
10mS
Tjmax
[kA2sec]
[KA]
13.50
14.45
180.00
1.60
1.70
6.00
* Pressure contact devices available on request
* for further details refer induvidual datasheets @ www.hirect.com
11
Rth(C-H)
T
/module jmax
VO
r
Rth(J-C)
/chip
[A]
0.85
0.85
0.80
[mΩ]
[°C/W]
[°C/W]
[°C]
3.20
3.20
1.60
0.30 0
0.22 0
0.155
0.10
0.03
0.03
125
Fig
No
TT1
TT1
TT2
Thyristor Modules
TT2
M6 PHILLIPS SCREW 3 NOS.
5
30
M5 PHILLIPS SCREW 3 NOS.
Ø6.5x2 HOLES
Ø 5.7x2 HOLES
2
20
1
3
14
20
30
TT1
K2 G2
G2
K2
K1
G1
20
26
23
80
K1 G1
23
24
80
94
92
TT3
TT4
M5 PHILLIPS SCREW 3 NOS.
36
7.7
48.5
60
35
10
Ø 6.5x2 HOLES
2
3
34
K3
G3
K1
G1
23
17
80
92.5
23
7 6
38
50
11 10
1
2
G1
K1
G2
K2
K
5 8 5
3
K2
G2
1
5 4
115
17
94
12.4
12.4
25
14.35
17
Ø5x2 holes
K1
1
2
7
G2
G1
6
8
32
TT6
Ø5
TT5
5
3
K2
4
48.5
63.4
12
Fast Turn-off Thyristors
Top Hat Type
Type
HF80TB
HF120TB
HF196TB
ITsm
VDRM / VRRM
×100
IT(av) / Tc
[V]
[A] [°C]
[kA]
2 - 12
80 85
120 85
195 85
2.45
2.90
6.00
Vpk /Ipk
at Tjmax
IGT /VGT
TJ =125°C.
Tq
Reapplied
dv/dt
Tjmax
[mA] [V]
[μSec]
[V/MSec]
[°C]
20-25
D,F,H
D,F
D,F
125
TH10
TH11
TH12
IIGT/VGT
GT/ VGT
TTj=125°C
=125°C.
J
Tq
Reapplied
dv/dt
Tjmax
Fig No
[mA] [V]
[μSec]
[V/MSec]
[°C]
2.2 800
2.3 1400
250 / 2.5
250 / 2.5
20-25
D,F
125
FH1
FH2
Vpk /Ipk
at Tjmax
I IGT/ /VVGT
TJ =125°C.
Tq
Reapplied
dv/dt
Tjmax
Fig No
[μSec]
20-25
40-55
60-80
[V/MSec]
500
500
1000
[°C]
I2t
10mS
Tjmax
[kA2sec]
30
42
180
2.40 400
2.20 500
2.05 800
I2t
A sec
Vpk /Ipk
at Tjmax
[V]
[A]
150 / 2.5
250 / 2.5
Fig No
Capsules (Center gate type)
ITsm
IT(av) / Tc 10mSec
Tjmax
VDRM / VRRM
×100
Type
HF188CH
HF408CH
[V]
[A] [°C]
[kA]
2 - 12
188 85
408 85
2.90
6.40
2
[kA2sec]
42
205
[V]
[A]
Capsules (Distributed gate type)
VDRM / VRRM
×100
Type
HS800CH
HS1250CH
HS2550CH
[V]
15
16-20
IT(av)/Tc
ITsm
10mSec
Tjmax
[A] [°C]
800 55
1250 55
2500 55
[kA]
10.00
14.00
37.20
I2t
[V] [A]
[kA2sec]
2.30 1600
500
2.00 2000
980
6920
2.15 4000
[mA] [V]
250 / 3.0
300 / 3.0
125
FH3
FH4
FH5
* for further details refer induvidual datasheets @ www.hirect.com
Ø8
Ø10
Ø4
22
Ø11
Ø7
10
A
A
13
80±5
21
21
1/2", 20 unf, 2a threads
33 A/F
3/4" UNF
255±10
K
110±10
G
44 A/F
27 A/F
Ø11
255±10
K
110±10
A
G
22
N
190±5
K
177±5
G
180±5
R
Ø4
27
19
Ø8
TH12
10
Ø4
TH11
11
11
TH10
3/4" UNF(2A)
Fast Turn-off Thyristors
FH2
FH1
Ø42
GATE
1.3
ANODE
K
G
A
Ø3.6x19=2HOLES
K
0.8
0.8
14±0.5
Ø25.15
0.8
Ø3.6x19=2HOLES
ANODE
A
25°
20°
FH4
FH3
CATHODE
CATHODE
GATE
Ø75
Ø50
GATE
26±1
2
2
Ø65
Ø42
26±1
G
CATHODE
GATE
Ø42
Ø19
13.1/14.1
CATHODE
2
Ø3.5x3.5,2 NOS.
K
G
GATE
Ø119
Ø80
2
CATHODE
Ø3.5x4,2 HOLES
35±2
FH5
20°
A
20°
A
K
2
ANODE
G
K
A
20°
G
ANODE
Ø3.5x3.5,2NOS.
2
ANODE
14
Power Stacks
Thyristor Stack (B6C)
Sr
I/P
Device type
No
Voltage
1
2
3
4
5
6
7
8
9
10
11
12
13
H445CH16
450V
H505CH16
450V
500V
H509CH18
H955CH16
450V
H1800CH18 500V
H2000CH18 500V
H1800CH18 500V
H2000CH18 500V
H3200CH20 550V
H2900CH25 700V
H1450CH28 750V
H1450CH28 750V
H1663CH36 1000V
Class - I Class - II
100%
cont.
800A
860A
1010A
1375A
1675A
2090A
2350A
2990A
3675A
3550A
1740A
2475A
2350A
Class - IV
Class - V
150% for 125% for 2 hrs 150% for 2 hrs
1 minute 200% for 10 secs 200% for 1 Min
560A
440A
410A
475A
450A
600A
525A
710A
575A
975A
800A
725A
1225A
1025A
900A
1540A
1325A
1125A
1740A
1360A
1275A
2225A
1770A
1625A
2850A
2325A
2050A
2375A
2225A
1975A
925A
1275A
1100A
1850A
1470A
1350A
1450A
1400A
1275A
Class - VI
150% for 2 Hrs
300% for 1 Mn
280A
340A
360A
500A
640A
800A
910A
1175A
1525A
1475A
670A
975A
925A
Arm Fuse
(For Class II)
Fuse Type
170M3269
400A /690V
170M3270
450A/690V
170M3271
500A/690V
700A/690V
170M4267
170M5265
900A/690V
1100A/690V
170M5267
1250A/690V
170M5268
170M6269
1600A/690V
170M7082
2000A/690V
2X170M6247 2X900A/1250V
170M6247
900A/1250V
170M6251 1400A/1100V
170M6723 1000A/1500V
Diode Stack (B6U)
I/P
Sr
Device type
No
Voltage
1
2
3
4
SH16C540
SH18C1130
SH18C1850
SH18C2500
415Vac
415Vac
415Vac
660Vac
Class - I Class - II
100%
cont.
1200A
1800A
2500A
3000A
150% for
1 minute
800A
1200A
1800A
2000A
Arm Fuse
(For Class II)
Fuse Type
170M3272
170M5265
170M5268
170M6251
Recommanded
Fuse Rating
550A/690V
900A/690V
1250A/690V
1400A/1100V
Panel size in mm
(w x d x h)
800 X 800 X 2200
800 X 800 X 2200
800 X 800 X 2200
800 X 800 X 2200
NOTE: - Current Ratings are valid for Forced cooling of 5 m/sec air outlet and ambient temp of 450C
15
Recommanded
Fuse Rating
Panel size in mm
(w x d x h)
800 x 800 x 2200
800 x 800 x 2200
800 x 800 x 2200
800 x 800 x 2200
800 x 800 x 2200
800 x 800 x 2200
1000 x 800 x 2200
1000 x 800 x 2200
1000 x 800 x 2200
1000 x 800 x 2200
800 x 800 x 2200
1000 x 800 x 2200
1000 x 800 x 2200
Power Stacks
PS1
Canopy
1065
S/C Fuses
~r
+
~y
~b
1000
16
Special Products
SP1
High Voltage Disks
Type
Current
[A]
0.65 A
Ø40
FEMALE TERMINAL M8 THREADS.
Fig No
26 NOS. DIODE
ANODE
SP1
8
9
HVD19K/0.65
Voltage
[V]
19K
CATHODE
MALE TERMINAL M8 SCREW
2 X H505
2 X H604
2 X H955
2 X H1500
2 X H2000
VDRM /
VDRM
[V]
1600
1600
1600
1600
1600
IRMS /
TWATER
0
[A / C]
625 / 40
880 / 40
1120 / 40
1500 / 40
1810 / 40
ITSM
Weight
Sine wave
10 ms
[kA]
5.6
6.5
12.5
24.6
36.0
[g]
2540
2600
3000
8500
8500
Fig No
W1
W2
W3
Water Flow Rate - 4.5L /min
Max Water Pressure - 10 Bar
NOTE: - dv/dt - 1000V/μSec available on request
3 Phase Press Fit Diode Stack For Welding Application
Type
PTS 240
PTS 400
PTS 600
In
VOUT
Ed
[A]
[V]
[/]
240
400
600
100
100
100
60
60
60
Air Speed
[M/s]
4
4
4
VRRM
[V]
400
400
400
Current rating other than the above are available on request
17
Ø22
Thyristors
19A/F
Water cooled Assemblies
Ø90
Special Products
W1
K
W2
A
110±1
52±1
A
K
162
51
K
A
95±2
K
130±1
63
A
59
27±2
51
59±1
38.5±2
162±2
W3
18
IGBT Sacks
HIRECT now offer reliable and highest quality IGBT
based SAFEStacks and assemblies with best thermal
management. This will help optimize system costs and
shorten the time to manufacture final equipment.
SAFE Stack is a complete switch assembly for power
electronic circuits. It contains all components necessary
for current, voltage and temperature feedback. The
62mm Infineon make IGBT modules are used along
with the superior and most reliable Eice Driver, which
provides quality and reliability to SAFEStacks.
HIRECT CAN NOW CONTRIBUTE TO YOUR SUCCESS BY
1. Shortening production time due to ready
to use power section.
2. Reduce system cost.
3. Modular designs offer flexible systems for
power solutions
4. Suitable for industrial standard design
cabinets.
5. Optimised thermal designs.
6. Can be readily paralleled for easy
expansions.
7. Low inductance IGBT Stack designs.
8. Various power electronic designs can be
offered.
USEFUL IN APPLICATIONS
1. Drives and Elevators
2. Renewable Energy and Distributed Power
Generation Systems
3. Un-interrupted Power Supplies (UPS)
4. Traction Drives
5. Medical Equipments
6. Energy Treatment and HVDC conversion
7. Electrolysis and Electroplating
8. Pulsed Power
AVAILABLE IN RATINGS 1000AMPS TO 1600AMPS AND WITH IGBTs OF 600, 1200 AND
1700 VOLTS.
By this technology tie-up, world class technology product is now locally available for manufacturers of
heavy duty drives, distributed power generators & industrial application in the form of HIRECT make
SAFEStacks & assemblies.
19
This Design guide is intended to give a survey of our current Products line of
power semiconductors together with their typical characteristics. Detailed
characteristics can be found in data sheets of each type available on request
from us.
Hind Rectifiers Ltd
Lake Road, Bhandup (W),Mumbai - 400 078
Tel: +91-22-25968027 / 28 / 29 / 31 / 25962432 Fax: +91-22-25964114 / 4352
Website : www.hirect.com E-mail : marketing@hirect.com
Nashik Plant
Plot No.110/111M.I.D.C. Satpur,Nashik - 422 007
Dehradun Plant
New Khasra No. 64 - 67& 74, Village Charba, Langa Road,
Vikas Nagar, Dehradun - 248197
EASTERN REGION
KOLKATA
1st Main Street, 10,Chatterjee Intl.
Centre, 33A, Jawaharlal Nehru Rd.
Kolkata- 700 071
Tel: +91-33-22267546,4443
Fax: +91-33-22497532
Email: tkbhattcharya@hirect.com
NORTHERN REGION
DELHI
62,Dayanand Road, Daryaganj
New Delhi-110 002
Tel: +91-11-23275571 / 7026
Fax: +91-11-23282586
Email: danial@hirect.com
SOUTHERN REGION
CHENNAI
Anna Mansion, 1st Floor No.7/1
Avenue Road, Nungambakkam,
Chennai- 600 034
Tel: +91-44-28241797,28221271
Fax: +91-44-28241796
Email: gdhanasekaran@hirect.com
WESTERN REGION
MUMBAI
Lake Road, Bhandup (W),
Mumbai - 400 078
Tel: +91-22-25968027 / 28 / 29 / 31
Fax: +91-22-25964114 / 4352
E-mail : marketing@hirect.com
BANGALORE
No.199, 1st Floor
HVR Layout, Magadi Road
(Near KHB Bus Stop)
Bangalore - +91-80-560 079
Telefax : - +91-80-23484615
Email: hkanantharamiah@vsnl.net
SECUNDARABAD
6-103/50, Padmarao Nagar,
Secundarabad- 500025
Tel: +91-40-27506239
Fax: +91-40-27505016
Email:rsnagabhushanam@hirect.com
In the Interest of product improvement Hirect reserves the Right to change the
specification without Notice
Issue No. 1
September - 08