HITFETÒ II.Generation BSP 78
Smart Lowside Power Switch
Features
Product Summary
· Logic Level Input
Drain source voltage
VDS
42
V
· Input Protection (ESD)
On-state resistance
RDS(on)
50
mW
· Thermal shutdown with
Nominal load current
ID(Nom)
3
A
Clamping energy
EAS
auto restart
500
mJ
· Overload protection
· Short circuit protection
4
· Overvoltage protection
3
· Current limitation
2
· Analog driving possible
1
VPS05163
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded
protection functions.
Vbb
M
HITFET â
Drain
Current
Limitation
In
Pin 2 and 4 (TAB)
OvervoltageProtection
Gate-Driving
Unit
Pin 1
ESD
Overload
Protection
Overtemperature
Protection
Short circuit
Protection
Pin 3
Source
Complete product spectrum and additional information http://www.infineon.com/hitfet
Page 1
2004-03-05
BSP 78
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Drain source voltage
VDS
42
Supply voltage for full short circuit protection
Vbb(SC)
42
Continuous input voltage1)
VIN
Continuous input current2)
IIN
-0.2V £ VIN £ 10V
Value
Unit
V
-0.22) ... +10
mA
self limited
| IIN | £ 2
VIN < -0.2V or VIN > 10V
°C
Operating temperature
Tj
-40 ...+150
Storage temperature
Tstg
-55 ... +150
Power dissipation 5)
Ptot
3.8
W
Unclamped single pulse inductive energy 2)
EAS
500
mJ
Load dump protection VLoadDump2)3) = VA + VS
VIN = 0 and 10 V, td = 400 ms, RI = 2 W,
VLD
53.5
V
2
kV
TC = 85 °C
RL = 4.5 W, VA = 13.5 V
Electrostatic discharge voltage2) (Human Body Model) VESD
according to Jedec norm
EIA/JESD22-A114-B, Section 4
MSL1
Jedec humidity category,J-STD-20-B
IEC climatic category; DIN EN 60068-1
40/150/56
Thermal resistance
RthJA
junction - ambient:
K/W
@ min. footprint
125
@ 6 cm 2 cooling area 4)
72
junction-soldering point:
RthJS
17
K/W
1For input voltages beyond these limits I has to be limited.
IN
2not subject to production test, specified by design
3V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
5not subject to production test, calculated by R
thJA and Rds(on)
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BSP 78
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
42
-
55
Characteristics
Drain source clamp voltage
VDS(AZ)
V
Tj = - 40 ...+ 150, ID = 10 mA
Off-state drain current
µA
IDSS
Tj = -40...+85 °C, V DS = 32 V , VIN = 0 V
-
1.5
8
Tj = 150 °C
-
5
15
Input threshold voltage
V
VIN(th)
ID = 1.4 mA, T j = 25 °C
ID = 1.4 mA, T j = 150 °C
On state input current
IIN(on)
On-state resistance
RDS(on)
1.3
1.7
2.2
0.8
-
-
-
10
30
mW
VIN = 5 V, ID = 3 A, Tj = 25 °C
-
45
60
VIN = 5 V, ID = 3 A, Tj = 150 °C
-
75
100
VIN = 10 V, I D = 3 A, Tj = 25 °C
-
35
50
VIN = 10 V, I D = 3 A, Tj = 150 °C
-
65
90
ID(Nom)
3
4
-
ID(lim)
18
24
30
On-state resistance
µA
RDS(on)
Nominal load current 5)
A
VDS = 0.5 V, Tj < 150°C, VIN = 10 V, T A = 85 °C
Current limit (active if VDS>2.5 V)1)
VIN = 10 V, VDS = 12 V, t m = 200 µs
1Device switched on into existing short circuit (see diagram Determination of I
D(lim) ). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5not subject to production test, calculated by R
thJA and Rds(on)
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BSP 78
Electrical Characteristics
Parameter
Symbol
at Tj = 25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
ton
-
60
100
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID:
toff
-
60
100
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
-dVDS/dt on
-
0.3
1.5
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
dVDS/dtoff
-
0.7
1.5
150
175
-
°C
Dynamic Characteristics
Turn-on time
VIN to 90% ID :
µs
V/µs
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions1)
Thermal overload trip temperature
Tjt
Thermal hysteresis 2)
DTjt
-
10
-
K
Input current protection mode
IIN(Prot)
-
130
300
µA
EAS
500
-
-
mJ
VSD
-
1
1.5
Tj = 150 °C
Unclamped single pulse inductive energy 2)
ID = 3 A, Tj = 25 °C, Vbb = 12 V
Inverse Diode
Inverse diode forward voltage
V
IF = 15 A, tm = 250 µs, V IN = 0 V,
tP = 300 µs
1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
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BSP 78
Block diagram
Inductive and overvoltage
output clamp
Terms
RL
V
I IN
1
D
IN
2
ID
VDS
D
Z
Vbb
HITFET
VIN
S
S
3
HITFET
Short circuit behaviour
Input circuit (ESD protection)
Gate Drive
Input
VIN
Source/
Ground
IIN
IDS
Tj
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BSP 78
1 Maximum allowable power dissipation
2 On-state resistance
Ptot = f(TS) resp.
RON = f(Tj ); ID=3A; VIN=10V
Ptot = f(TA) @ R thJA=72 K/W
10
100
mW
W
8
80
RDS(on)
max.
7
Ptot
max.
6
70
60
5
50
4
40
3
30
2 6cm2
20
1
10
0
-75
-50
-25
0
25
50
75
100 °C
0
-50
150
typ.
-25
0
25
50
75
100 125 °C
TS ;TA
3 On-state resistance
4 Typ. input threshold voltage
RON = f(T j); ID= 3A; VIN=5V
VIN(th) = f(Tj); ID = 0.7 mA; V DS = 12V
2
110
mW
V
max.
90
1.6
80
typ.
70
VGS(th)
RDS(on)
175
Tj
1.4
1.2
60
1
50
0.8
40
0.6
30
20
0.4
10
0.2
0
-50
-25
0
25
50
75
100 125 °C
0
-50
175
Tj
-25
0
25
50
75
100
°C
150
Tj
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BSP 78
5 Typ. transfer characteristics
6 Typ. short circuit current
I D=f(V IN); VDS=12V; T Jstart=25°C
ID(lim) = f(Tj); VDS=12V
Parameter: VIN
A
A
20
20
ID
30
ID
30
Vin=10V
15
15
10
10
5
5
0
0
1
2
3
4
5
6
7
8
V
0
-50
10
5V
-25
0
25
50
75
VIN
100 125 °C
175
Tj
7 Typ. output characteristics
8 Off-state drain current
I D=f(V DS); T Jstart=25°C
Parameter: VIN
IDSS = f(Tj)
35
16
max.
µA
A
10V
7V
12
25
ID
IDSS
6V
5V
20
4V
10
8
15
6
typ.
10
Vin=3V
4
5
0
0
2
1
2
3
4
V
0
-40
6
VDS
-15
10
35
60
85
110 135 °C
185
Tj
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BSP 78
9 Typ. overload current
10 Typ. transient thermal impedance
ID(lim) = f(t), Vbb=12 V, no heatsink
ZthJA=f(tp) @ 6 cm2 cooling area
Parameter: Tjstart
Parameter: D=tp/T
10 2
40
K/W
D=0.5
A
10 1
0.1
-40°C
ZthJA
ID(lim)
30
0.2
25
0.05
10 0
0.02
0.01
20
10 -1
15
10
85°C
150°C
25°C
10 -2
Single pulse
5
0
0
0.5
1
1.5
2
2.5
3
ms
10 -3 -7
-6
-5
-4
-3
-2
-1
0
1
10 10 10 10 10 10 10 10 10
4
s
10
3
tp
t
11 Determination of ID(lim)
ID(lim) = f(t); t m = 200µs
Parameter: TJstart
40
A
ID(lim)
30
-40°C
25
25°C
20
85°C
15
150°C
10
5
0
0
0.1
0.2
0.3
0.4
ms
0.6
t
Page 8
2004-03-05
BSP 78
Package
Ordering Code
SOT-223
Q67060-S7203-A3
1.6 ±0.1
6.5 ±0.2
+0.2
acc. to
DIN 6784
1
2
3
3.5 ±0.2
4
7 ±0.3
B
15˚ max
0.1 max
3 ±0.1
0.5 min
A
0.28 ±0.04
2.3
0.7 ±0.1
4.6
0.25
M
A
0.25
M
B
GPS05560
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BSP 78
Revision History :
Previous version :
2004-03-05
2003-04-22
Page
Subjects (major changes since last revision)
2, 4
Footnote 2 extended to Vin<0V, Etot and ∆TjT
2, 3
Footnote 5 implemented to Ptot and ID(nom)
2
ESD test condition changed from MIL STD 883D, methode 3015.7 and EOS/ESD assn.
standard S5.1-1993 to Jedec Norm EIA/JESD22-A114-B, Section 4
2
Humidity category classification changed from DIN 40040 value E to J-STD-20-B value MSL1
2
climatic category changed from DIN IEC 68-1 to DIN EN 60068-1
3
VIN(th) test conditions from ID=0.7mA to ID=1.4mA
For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany
or the Infineon Technologies Companies and Representatives worldwide: see our webpage at
http://www.infineon.com
HITFET®, SIPMOS® are registered trademarks of Infineon Technologies AG.
Edition 2004-02-02
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
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