Smart Lowside Power Switch

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HITFET=BTS 133
Smart Lowside Power Switch
Features
Product Summary
• Logic Level Input
Drain source voltage
VDS
60
V
• Input Protection (ESD)
On-state resistance
RDS(on)
50
mΩ
•=Thermal shutdown with latch
Current limit
I D(lim)
21
A
• Overload protection
Nominal load current
I D(ISO)
7
A
• Short circuit protection
Clamping energy
EAS
2000 mJ
• Overvoltage protection
• Current
limitation
• Status feedback with external input resistor
• Analog driving possible
Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS  chip on chip technology. Fully protected by embedded protected functions.
V bb
+
LOAD
D rain
1
dv /d t
lim ita tio n
IN
ESD
O v erloa d
pro te ctio n
C u rre n t
lim ita tio n
O ve rte m pe rature
p ro te ctio n
M
2
O ve rvoltag e
p rotection
Sh
ho
rt circ
c ircu
it
S
ort
uit
pprotection
ro te ctio n
S o u rce
3
H IT F E T
Page 1
19.05.2000
BTS 133
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Value
Drain source voltage
VDS
60
Drain source voltage for short circuit protection
Continuous input current 1)
VDS(SC)
32
Unit
V
mA
IIN
-0.2V ≤ VIN ≤ 10V
no limit
VIN < -0.2V or VIN > 10V
| IIN | ≤ 2
Operating temperature
Tj
- 40 ... +150
°C
Storage temperature
Tstg
- 55 ... +150
Power dissipation
Ptot
90
W
EAS
2000
mJ
3000
V
TC = 25 °C
Unclamped single pulse inductive energy
ID(ISO) = 7 A
Electrostatic discharge voltage (Human Body Model) VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA =13.5 V
VLD
td = 400 ms, RI = 2 Ω, ID =0,5*7A
90
td = 400 ms, RI = 2 Ω, ID = 7A
74
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
RthJC
1.4
junction - ambient:
RthJA
75
SMD version, device on PCB: 3)
RthJA
45
K/W
1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3).
2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Drain connection.
PCB mounted vertical without blown air.
Page 2
19.05.2000
BTS 133
Electrical Characteristics
Parameter
Symbol
at Tj=25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
60
-
73
V
-
-
10
µA
1.3
1.7
2.2
V
-
30
55
µA
60
150
350
1000
2500
4000
Tj = 25 °C
500
-
-
Tj = 150 °C
300
-
-
Characteristics
Drain source clamp voltage
VDS(AZ)
Tj = - 40 ...+ 150°C, ID = 10 mA
Off state drain current
IDSS
VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V
Input threshold voltage
VIN(th)
ID = 1,4 mA
Input current - normal operation, ID<ID(lim):
IIN(1)
VIN = 10 V
Input current - current limitation mode, ID=ID(lim): IIN(2)
VIN = 10 V
Input current - after thermal shutdown, ID=0 A:
VIN = 10 V
IIN(3)
Input holding current after thermal shutdown 1)
IIN(H)
On-state resistance
RDS(on)
mΩ
VIN = 5 V, ID = 7 A, Tj = 25 °C
-
50
60
VIN = 5 V, ID = 7 A, Tj = 150 °C
-
90
120
VIN = 10 V, I D = 7 A, Tj = 25 °C
-
40
50
VIN = 10 V, I D = 7 A, Tj = 150 °C
-
75
100
7
-
-
On-state resistance
RDS(on)
Nominal load current (ISO 10483)
ID(ISO)
A
VIN = 10 V, VDS = 0.5 V, TC = 85 °C
1If the input current is limited by external components, low drain currents can flow and heat the device.
Auto restart behaviour can occur.
Page 3
19.05.2000
BTS 133
Electrical Characteristics
Parameter
Symbol
at Tj=25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
ID(SCp)
-
65
-
ID(lim)
21
28
40
ton
--
40
100
toff
--
70
170
-dVDS/dton
--
1
3
dVDS/dtoff
--
1
3
150
165
-
Characteristics
Initial peak short circuit current limit
A
VIN = 10 V, VDS = 12 V
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C
Dynamic Characteristics
Turn-on time
VIN to 90% ID :
µs
RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID :
RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb :
V/µs
RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions
Thermal overload trip temperature
Tjt
Unclamped single pulse inductive energy
EAS
°C
mJ
ID = 7 A, Tj = 25 °C, Vbb = 32 V
2000
-
-
ID = 7 A, Tj = 150 °C, Vbb = 32 V
450
-
-
-
1.08
-
Inverse Diode
Inverse diode forward voltage
VSD
V
IF = 5*7A, tm = 300 µS, VIN = 0 V
1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Page 4
19.05.2000
BTS 133
Block Diagramm
Terms
Inductive and overvoltage output clamp
RL
I IN
1
D
IN
V
Z
D
2
ID
S
VDS Vbb
HITFET
S
VIN
3
HITFET
Short circuit behaviour
Input circuit (ESD protection)
V IN
I D(SCp)
IN
I D(Lim)
ID
ESD-ZD I
Source
ESD zener diodes are not designed
for DC current > 2 mA @ VIN >10V.
t0
t0:
tm
t1
t2
Turn on into a short circuit
tm: Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
Page 5
19.05.2000
BTS 133
Maximum allowable power dissipation
On-state resistance
Ptot = f(Tc )
RON = f(Tj ); ID=7A; VIN =10V
100
BTS 133
100
mΩ
W
80
RDS(on)
80
Ptot
70
60
70
60
max.
50
50
40
40
30
30
20
20
10
10
0
0
20
40
60
80
100
120
°C
0
-50
160
typ.
-25
0
25
50
75
100
150
Tj
150
On-state resistance
Typ. input threshold voltage
RON = f(Tj ); ID= 7A; VIN=5V
VIN(th) = f(Tj); ID =1,4mA; VDS =12V
2.0
120
mΩ
V
100
1.6
90
VIN(th)
RDS(on)
°C
80
70
1.4
1.2
max.
60
1.0
50
typ.
0.8
40
0.6
30
0.4
20
0.2
10
0
-50
-25
0
25
50
75
100
°C
150
Tj
0.0
-50
-25
0
25
50
75
100
°C
150
Tj
Page 6
19.05.2000
BTS 133
Typ. transfer characteristics
Typ. output characteristic
ID = f(VIN); VDS =12V; Tj =25°C
ID = f(VDS); Tj =25°C
Parameter: VIN
25
24
10V
6V
5V
A
A
4V
ID
ID
16
15
12
10
8
Vin=3V
5
4
0
0
1
2
3
4
5
V
6
0
0
8
VIN
1
2
3
V
5
VDS
Transient thermal impedance
Z thJC = f (t p)
parameter : D = t p/T
10
1
K/W
0
D=0.5
ZthJC
10
0.2
10
0.1
-1
0.05
0.02
10
-2
10
-3
0.01
0.005
0
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
s
10
2
tP
Page 7
19.05.2000
BTS 133
Application examples:
Status signal of thermal shutdown by
monitoring input current
R St
IN
µC
V
IN
D
HITFET
V
bb
S
∆V
V
IN
thermal shutdown
∆V = RST *IIN(3)
Page 8
19.05.2000
BTS 133
Package
Ordering Code
Package
Ordering Code
P-TO220-3-45
Q67060-S6501-A3
P-TO220-3-1
Q67060-S6501-A2
4.4
1.3
0.2
2.4
10.5
9.9
8
0.75
1.05
2.54
0.5
1.5
1.5
3.6
9.2
1)
GPT05164
1) shear and punch direction no burrs this surface
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D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
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Page 9
19.05.2000
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