BTS949 - Digi-Key Corporation

HITFET=BTS 949
Smart Lowside Power Switch
Features
Product Summary
• Logic Level Input
Drain source voltage
VDS
60
V
• Input Protection (ESD)
On-state resistance
RDS(on)
18
mΩ
•=Thermal shutdown with latch
Current limit
I D(lim)
9.5
A
• Overload protection
Nominal load current
I D(ISO)
19
A
• Short circuit protection
Clamping energy
EAS
6000 mJ
• Overvoltage protection
• Current
limitation
• Maximum current adjustable with external resistor
1
• Current sense
5
• Status feedback with external input resistor
VPT05166
• Analog driving possible
Application
1
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits
5
VPT05165
General Description
N channel vertical power FET in Smart SIPMOS  chip on chip technology. Fully protected by embedded protected functions.
V bb
+
LOAD
2
M
NC
1
4
dv/dt
limitation
IN
3
Current
limitation
Source
5
CC
ESD
R
CC
Drain
Overvoltage
protection
Overload
protection
Overtemperature
protection
Short circuit
circuit
Short
protection
protection
HITFET
Page 1
07.06.2000
BTS 949
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Drain source voltage
VDS
Drain source voltage for short circuit protection
RCC = 0 Ω
VDS(SC)
Value
60
Unit
V
15
without RCC
50
Continuous input current 1)
mA
IIN
-0.2V ≤ VIN ≤ 10V
no limit
VIN < -0.2V or VIN > 10V
| IIN | ≤ 2
Operating temperature
Tj
- 40 ... +150
°C
Storage temperature
Tstg
- 55 ... +150
Power dissipation
Ptot
240
W
EAS
6000
mJ
3000
V
TC = 25 °C
Unclamped single pulse inductive energy
ID(ISO) = 19 A
Electrostatic discharge voltage (Human Body Model) VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection VLoadDump2) = VA + VS
VIN=low or high; VA =13.5 V
VLD
td = 400 ms, RI = 2 Ω, ID =0,5*19A
110
td = 400 ms, RI = 2 Ω, ID = 19A
92
DIN humidity category, DIN 40 040
E
IEC climatic category; DIN IEC 68-1
40/150/56
Thermal resistance
junction - case:
RthJC
0.7
junction - ambient:
RthJA
75
SMD version, device on PCB:3)
RthJA
45
K/W
1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3).
2V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for drain
connection. PCB mounted vertical without blown air.
Page 2
07.06.2000
BTS 949
Electrical Characteristics
Parameter
Symbol
at Tj=25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
60
-
73
V
-
-
25
µA
1.3
1.7
2.2
V
IIN(1)
-
-
100
µA
Input current - current limitation mode, ID=ID(lim): IIN(2)
-
400
1000
1500
3000
6000
Tj = 25 °C
500
-
-
Tj = 150 °C
300
-
-
Characteristics
Drain source clamp voltage
VDS(AZ)
Tj = - 40 ...+ 150°C, ID = 10 mA
Off state drain current
IDSS
VDS = 32 V, Tj = -40...+150 °C, VIN = 0 V
Input threshold voltage
VIN(th)
ID = 3,9 mA
Input current - normal operation, ID<ID(lim):
VIN = 10 V
VIN = 10 V
Input current - after thermal shutdown, ID=0 A:
VIN = 10 V
IIN(3)
Input holding current after thermal shutdown 1)
IIN(H)
On-state resistance
RDS(on)
mΩ
VIN = 5 V, ID = 19 A, Tj = 25 °C
-
18
22
VIN = 5 V, ID = 19 A, Tj = 150 °C
-
30
44
VIN = 10 V, I D = 19 A, Tj = 25 °C
-
14
18
VIN = 10 V, I D = 19 A, Tj = 150 °C
-
25
36
19
-
-
On-state resistance
RDS(on)
Nominal load current (ISO 10483)
ID(ISO)
A
VIN = 10 V, VDS = 0.5 V, TC = 85 °C
1If the input current is limited by external components, low drain currents can flow and heat the device.
Auto restart behaviour can occur.
Page 3
07.06.2000
BTS 949
Electrical Characteristics
Parameter
Symbol
at Tj=25°C, unless otherwise specified
Values
Unit
min.
typ.
max.
-
175
-
Tj = -40...+150 °C, without RCC
9.5
19
40
VIN = 10 V, VDS = 12 V, tm = 350 µs,
150
220
270
ton
-
40
100
toff
-
70
170
-dVDS/dton
-
1
3
dVDS/dtoff
-
1
3
150
165
-
Characteristics
Initial peak short circuit current limit
ID(SCp)
A
VIN = 10 V, VDS = 12 V
Current limit 1)
ID(lim)
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C, RCC = 0 Ω
Dynamic Characteristics
Turn-on time
VIN to 90% ID :
µs
RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time
VIN to 10% ID :
RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb :
V/µs
RL = 1 Ω, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 1 Ω, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions
Thermal overload trip temperature
Tjt
Unclamped single pulse inductive energy
EAS
°C
mJ
ID = 19 A, Tj = 25 °C, Vbb = 32 V
6000
-
-
ID = 19 A, Tj = 150 °C, Vbb = 32 V
1800
-
-
-
1,1
-
Inverse Diode
Inverse diode forward voltage
VSD
V
IF = 5*19A, tm = 300 µS, VIN = 0 V
1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
Page 4
07.06.2000
BTS 949
Block Diagramm
Terms
Inductive and overvoltage output clamp
RL
I IN
1
V
4
ID
CC
S
D
3
VDS
Vbb
S
HITFET
RCC
V IN
D
IN
V
Z
5
CC
HITFET
Short circuit behaviour
The ground lead impedance of RCC
should be as low as possible
V IN
Input circuit (ESD protection)
I D(SCp)
I D(Lim)
ID
IN
ESD-ZD I
Source
t0
t0:
ESD zener diodes are not designed
for DC current > 2 mA @ VIN >10V.
tm
t1
t2
Turn on into a short circuit
tm: Measurementpoint for ID(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
Page 5
07.06.2000
BTS 949
Maximum allowable power dissipation
On-state resistance
Ptot = f(Tc )
RON = f(Tj ); ID=19A; VIN =10V
BTS 949
40
260
W
mΩ
220
RDS(on)
200
Ptot
180
160
30
25
max.
140
20
120
typ.
15
100
80
10
60
40
5
20
0
0
20
40
60
80
100
120
°C
0
-50
160
-25
0
25
50
75
100
150
Tj
150
On-state resistance
Typ. input threshold voltage
RON = f(Tj ); ID= 19A; V IN=5V
VIN(th) = f(Tj); ID =3,9A; VDS=12V
45
2.0
mΩ
V
1.6
VIN(th)
35
RDS(on)
°C
30
max.
1.4
1.2
25
1.0
typ.
20
0.8
15
0.6
10
0.4
5
0
-50
0.2
-25
0
25
50
75
100
°C
150
Tj
0.0
-50
-25
0
25
50
75
100
°C
150
Tj
Page 6
07.06.2000
BTS 949
Typ. transfer characteristics
Typ. short circuit current
ID = f(VIN); VDS =12V; Tj =25°C
IDlim = f(Tj); RCC =0Ω, VDS =12V
Parameter: VIN
250
160
A
10V
A
9V
8V
100
ID
ID
120
150
7V
80
6V
100
60
5V
40
4V
50
20
0
0
3V
1
2
3
4
5
V
0
-50
7
-25
0
25
50
75
100
VIN
°C
150
Tj
Typ. output characteristic
Safe Operating Area
I D = f(VDS); T j=25°C
ID(SC) = f(VDS ); Tj =25°C
Parameter: VIN
150
300
10V
A
A
6V
100
ID
ID
200
5V
75
150
4V
50
100
25
50
VIN=3V
0
0
1
2
3
4
5
V
0
0
7
VDS
10
20
30
V
50
VDS
Page 7
07.06.2000
BTS 949
Typ. current limit versus RCC
Typ. current sense characteristics
ID(lim) = f(RCC ); Tj=25°C
VCC = f(ID); VIN=10V
Parameter: VIN
Parameter: RCC , Tj
250
A
600
mV
10V
500
200
450
VCC
175
ID
no Rcc
150
300
100
250
5V
82 Ohm
350
125
75
25°C
400
125°C
47 Ohm
200
150
50
22 Ohm
100
25
0 -2
10
50
-1
10
10
0
10
1
10
2
10
Ω
RCC
4
0
0
10
20
30
40
50
A
65
ID
Transient thermal impedance
ZthJC = f (t p)
parameter : D = t p/T
10 0
K/W
Z thJC
10 -1
D=0.5
0.2
0.1
0.05
10 -2
0.02
0.01
0.005
10 -3
0
10 -4 -7
-6
-5
-4
-3
-2
-1
0
10 10 10 10 10 10 10 10
s
10
2
tP
Page 8
07.06.2000
BTS 949
Application examples:
Current Sense Features and Status
Signals
IN
D
HITFET
µC
CC
V
bb
S
RCC
V
CC
IN
open
load
thermal
shutdown
V cc
V cc
reached triptemperature
The accuray of Vcc is at each
temperature about ±10 %
Status signal of thermal shutdown by
monitoring input current
R St
IN
µC
V
IN
D
HITFET
CC
V
bb
S
∆V
V
IN
thermal shutdown
∆V = RST *IIN(3)
Page 9
07.06.2000
BTS 949
Package
Ordering Code
Package
Ordering Code
P-TO220-5-62
Q67060-S6703-A4
P-TO220-5-3
Q67060-S6703-A2
9.9
9.5
3.7
4.4
0.8
0.8
0.2
M
GPT05166
1) shear and punch direction no burrs this surface
Package
Ordering Code
P-TO220-5-43
On request
5.6
2.4
0.5
4x1.7=6.8
4 x 1.7 = 6.8
15˚
1.7
0.5
1.7
9.2
12.8
15.6
1.5
1.5
3.6
9.2
1)
1)
3)
9.75
5 2)
10.5
2.8
1.3
0.2
2.4
9.9
8
4.4
1.3
4.5
8.2
GPT05165
1) shear and punch direction no burrs this surface
2) min. length by tinning
3) max. 11 mm allowable by tinning
9.9
4.4
9.5
3.7
9.2
12.8
15.6
2.8
1.3
2)
13.5 3)
1
1)
0.8
0.5
2.4
1.7
4 x 1.7 = 6.8
0,3
M
GPT05896
1) Punch direction, burr max. 0.04
2) Dip tinning
3) Max. 14.5 by dip tinning press burr
max. 0.05 radii not dimensioned max. 0.2
Page 10
07.06.2000
BTS 949
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 11
07.06.2000