APM4008NU
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
40V/60A,
RDS(ON)=6.5mΩ (typ.) @ VGS=10V
G
RDS(ON)=10.5mΩ (typ.) @ VGS=4.5V
•
•
•
D
Super High Dense Cell Design
S
Reliable and Rugged
Top View of TO-252-3
Lead Free and Green Devices Available (RoHS
D
Compliant)
Applications
G
•
Power Management in Desktop Computer or
DC/DC Converters
S
N-Channel MOSFET
Ordering and Marking Information
Package Code
U : TO-252-3
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM4008N
Assembly Material
Handling Code
Temperature Range
Package Code
APM4008N U :
XXXXX - Date Code
APM4008N
XXXXX
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
1
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APM4008NU
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
40
VGSS
Gate-Source Voltage
±20
Maximum Junction Temperature
150
°C
-55 to 150
°C
20
A
TJ
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
IDP
300µs Pulse Drain Current Tested
TC=25°C
150
TC=100°C
80
TC=25°C
60*
TC=100°C
40
TC=25°C
50
TC=100°C
20
V
A
Mounted on Large Heat Sink
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
2.5
Thermal Resistance-Junction to Case
A
W
°C/W
2
Mounted on PCB of 1in pad area
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
TA=25°C
14
TA=100°C
9
TA=25°C
2.5
TA=100°C
1
Thermal Resistance-Junction to Ambient
50
A
W
°C/W
Mounted on PCB of Minimum Footprint
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJA
Thermal Resistance-Junction to Ambient
TA=25°C
11
TA=100°C
7
TA=25°C
1.5
TA=100°C
0.5
75
A
W
°C/W
Note : * Current limited by bond wire.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
2
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APM4008NU
Electrical Characteristics
Symbol
(TA = 25°C)
Parameter
Test Conditions
APM4008NU
Min.
Typ.
Max.
40
-
-
-
-
1
-
-
30
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
VGS=0V, IDS=250µA
VDS=32V, VGS=0V
TJ=85°C
V
µA
Gate Threshold Voltage
VDS=VGS, IDS=250µA
1.3
2
3
V
Gate Leakage Current
VGS=±20V, VDS=0V
-
-
±100
nA
VGS=10V, IDS=40A
-
6.5
8
VGS=4.5V, IDS=20A
-
10.5
14
ISD=20A, VGS=0V
-
0.7
1.1
-
51
71
-
8
-
-
14
-
-
1.3
-
-
2600
-
-
260
-
-
210
-
-
18
33
-
16
30
-
57
104
-
18
33
-
32
-
ns
-
29
-
nC
RDS(ON) a Drain-Source On-state Resistance
mΩ
Diode Characteristics
VSD
a
Diode Forward Voltage
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Dynamic Characteristics
VDS=20V, VGS=10V,
IDS=40A
nC
b
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
Turn-off Fall Time
trr
Reverse Recovery Time
Qrr
V
b
Reverse Recovery Charge
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=20V,
Frequency=1.0MHz
VDD=20V, RL=20Ω,
IDS=1A, VGEN=10V,
RG=6Ω
IDS=40A, dlSD/dt=100A/µs
Ω
pF
ns
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
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APM4008NU
Typical Operating Characteristics
Drain Current
Power Dissipation
70
60
60
ID - Drain Current (A)
Ptot - Power (W)
50
40
30
20
10
50
40
30
20
10
o
0
o
TC=25 C
0
0
20 40 60 80 100 120 140 160 180
TC=25 C,VG=10V
0
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
400
Lim
it
300us
1ms
Rd
s(o
n)
ID - Drain Current (A)
100
Normalized Effective Transient
1
10ms
10
100ms
1s
DC
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
O
T =25 C
0.1 C
0.01
0.1
1
10
1E-3
0.01
0.1
1
10
100
100 300
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
Mounted on 1in pad
o
RθJA :50 C/W
4
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APM4008NU
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
18
150
RDS(ON) - On - Resistance (mΩ)
5.5V
VGS= 6,7,8,9,10V
120
ID - Drain Current (A)
5V
90
4.5V
60
4V
30
15
VGS=4.5V
12
9
VGS=10V
6
3
3.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
3.0
0
30
60
90
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
20
IDS =250µA
18
Normalized Threshold Voltage
RDS(ON) - On - Resistance (mΩ)
150
1.8
ID=40A
16
14
12
10
8
6
1.6
1.4
1.2
1.0
0.8
0.6
0.4
4
2
120
2
3
4
5
6
7
8
9
0.2
-50 -25
10
25
50
75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
0
5
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APM4008NU
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
150
2.0
VGS = 10V
IDS = 40A
1.6
o
1.4
IS - Source Current (A)
Normalized On Resistance
1.8
100
1.2
1.0
0.8
0.6
0.4
Tj=150 C
10
o
Tj=25 C
1
0.2
o
0.0
-50 -25
RON@Tj=25 C: 6.5mΩ
0
25
50
0.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Capacitance
Gate Charge
4000
10
Frequency=1MHz
VDS= 15V
9 I = 40A
D
VGS - Gate-source Voltage (V)
3500
C - Capacitance (pF)
3000
Ciss
2500
2000
1500
1000
500
0
5
7
6
5
4
3
2
1
Coss
Crss
0
8
0
10
15
20
25
30
35
40
10
20
30
40
50
60
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
0
6
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APM4008NU
Avalanche Test Circuit and Waveforms
VDS
L
tp
VDSX(SUS)
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Avalanche Test Circuit and Waveforms
VDS
RD
VDS
DUT
90%
VGS
RG
VDD
10%
tp
VGS
td(on) tr
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
7
td(off) tf
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APM4008NU
Package Information
TO-252-3
E
A
E1
c2
L4
H
D
D1
L3
b3
c
b
e
SEE VIEW A
0
GAUGE PLANE
SEATING PLANE
0.25
A1
L
VIEW A
TO-252-3
S
Y
M
B
O
L
MIN.
MAX.
MIN.
MAX.
A
2.18
2.39
0.086
0.094
MILLIMETERS
INCHES
0.005
0.13
A1
b
0.50
0.89
0.020
0.035
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
c2
0.46
0.89
0.018
0.035
D
5.33
6.22
0.210
0.245
D1
4.57
6.00
0.180
0.236
E
6.35
6.73
0.250
0.265
E1
3.81
6.00
0.150
0.236
0.410
e
2.29 BSC
0.090 BSC
H
9.40
10.41
0.370
L
0.90
1.78
0.035
0.070
L3
0.89
2.03
0.035
0.080
L4
0
0.040
1.02
0°
8°
0°
8°
Note : Follow JEDEC TO-252 .
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
8
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APM4008NU
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
TO-252-3
A
H
T1
C
d
D
W
E1
F
330.0±2.00 50 MIN. 16.4+2.00 13.0+0.50 1.5 MIN. 20.2 MIN. 16.0±0.30 1.75±0.10 7.50±0.05
-0.00
-0.20
P0
P1
P2
D0
D1
T
A0
B0
K0
10.40±
4.0±0.10 8.0±0.10 2.0±0.05 1.5+0.10 1.5 MIN. 0.6+0.00 6.80±0.20
2.50±0.20
-0.00
-0.40
0.20
(mm)
Devices Per Unit
Package Type
TO-252-3
Unit
Tape & Reel
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
Quantity
2500
9
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APM4008NU
Taping Direction Information
TO-252-3
USER DIRECTION OF FEED
Classification Profile
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
10
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APM4008NU
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
60-120 seconds
150 °C
200 °C
60-120 seconds
3 °C/second max.
3°C/second max.
183 °C
60-150 seconds
217 °C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5°C of the specified
classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 °C/second max.
6 °C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak
Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak
(Tp)*
package
body
Temperature
Time 25°C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
3
Package
Volume mm
Thickness
<350
<2.5 mm
235 °C
≥2.5 mm
Volume mm
≥350
220 °C
220 °C
3
220 °C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
1.6 mm – 2.5 mm
≥2.5 mm
Volume mm
<350
260 °C
260 °C
250 °C
3
3
Volume mm
350-2000
260 °C
250 °C
245 °C
Volume mm
>2000
260 °C
245 °C
245 °C
3
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
11
Description
5 Sec, 245°C
1000 Hrs, Bias @ 125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
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APM4008NU
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. A.3 - Apr., 2009
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