APM4532K
Dual Enhancement Mode MOSFET (N-and P-Channel)
Features
•
Pin Description
N-Channel
D1
D1
D2
D2
30V/5A,
RDS(ON) =35mΩ(Typ.) @ VGS = 10V
RDS(ON) =60mΩ(Typ.) @ VGS = 4.5V
•
S1
G1
S2
G2
P-Channel
-30V/-3.5A,
Top View of SOP − 8
RDS(ON) =85mΩ(Typ.) @ VGS =-10V
RDS(ON) =135mΩ(Typ.) @ VGS =-4.5V
•
•
•
(3)
S2
(8) (7)
D1 D1
Super High Dense Cell Design
Reliable and Rugged
Lead Free and Green Devices Available
(4)
G2
(RoHS Compliant)
(2)
G1
Applications
•
Power Management in Notebook Computer,
S1
(1)
Portable Equipment and Battery Powered
N-Channel MOSFET
Systems
D2
(5)
D2
(6)
P-Channel MOSFET
Ordering and Marking Information
APM4532
Package Code
K : SOP-8
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
L : Lead Free Device
G : Halogen and Lead Free Device
Assembly Material
Handling Code
Temperature Range
Package Code
APM4532 K :
APM4532
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
1
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APM4532K
Absolute Maximum Ratings
Symbol
(TA = 25°C unless otherwise noted)
Rating
Parameter
N Channel P Channel
VDSS
Drain-Source Voltage
30
-30
VGSS
Gate-Source Voltage
±20
±20
5
-3.5
20
-14
1.7
-1.7
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
VGS=±10V
TSTG
Storage Temperature Range
PD*
Power Dissipation
RθJA*
Unit
V
A
A
150
°C
-55 to 150
TA=25°C
2
TA=100°C
0.8
Thermal Resistance-Junction to Ambient
W
°C/W
62.5
Note : *Surface Mounted on 1in pad area, t ≤ 10 sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM4532K
Test Conditions
Min.
Typ.
Max.
Unit
STATIC CHARACTERISTICS
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V, IDS=250µA
N-Ch
30
-
-
VGS=0V, IDS=-250µA
P-Ch
-30
-
-
-
-
1
-
-
30
-
-
-1
-
-
-30
VDS=24V, VGS=0V
Zero Gate Voltage Drain
Current
IDSS
TJ=85°C
VDS=-24V, VGS=0V
TJ=85°C
VGS(th)
Gate Threshold Voltage
IGSS
RDS(ON)
Gate Leakage Current
a
Drain-Source On-State
Resistance
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
N-Ch
P-Ch
VDS=VGS, IDS=250µA
N-Ch
1
1.5
2
VDS=VGS, IDS=-250µA
P-Ch
-1
-1.5
-2
N-Ch
-
-
±100
P-Ch
-
-
±100
VGS=10V, IDS=5A
N-Ch
-
35
45
VGS=-10V, IDS=-3.5A
P-Ch
-
85
95
VGS=4.5V, IDS=4A
N-Ch
-
60
70
VGS=-4.5V, IDS=-2.5A
P-Ch
-
135
150
VGS=±20V, VDS=0V
2
V
µA
V
nA
mΩ
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APM4532K
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25°C unless otherwise noted)
APM4532K
Test Conditions
Unit
Min.
Typ.
Max.
DIODE CHARACTERISTICS
a
VSD
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
td(OFF)
Tf
ISD=1.7A, VGS=0V
N-Ch
-
0.7
1.3
ISD=-1.7A, VGS=0V
P-Ch
-
-0.7
-1.3
N-Ch
-
3
-
P-Ch
-
13
-
N-Channel
VGS=0V,
VDS=25V,
Frequency=1.0MHz
N-Ch
-
440
-
P-Ch
-
530
-
N-Ch
-
90
-
P-Channel
VGS=0V,
VDS=-25V,
Frequency=1.0MHz
P-Ch
-
90
-
N-Ch
-
40
-
P-Ch
-
40
-
N-Ch
-
10
15
P-Ch
-
8
15
N-Ch
-
8
20
P-Ch
-
7
20
N-Ch
-
20
28
P-Ch
-
15
28
N-Ch
-
5
15
P-Ch
-
7
18
N-Ch
-
12.6
17
P-Ch
-
8
12
N-Ch
-
4.7
-
P-Ch
-
2
-
N-Ch
-
1.1
-
P-Ch
-
1
-
b
Turn-off Delay Time
Turn-off Fall Time
VGS=0V,VDS=0V,F=1MHz
N-Channel
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
P-Channel
VDD=-15V, RL=15Ω,
IDS=-1A, VGEN=-10V,
RG=6Ω
GATE CHARGE CHARACTERISTICS
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
V
Gate-Drain Charge
Ω
pF
ns
b
N-Channel
VDS=15V, VGS=10V,
IDS=5A
P-Channel
VDS=-15V, VGS=-10V,
IDS=-3.5A
nC
Note a : Pulse test ; pulse width ≤ 300µs, duty cycle ≤ 2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
3
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APM4532K
Typical Operating Characteristics
N-Channel
Drain Current
Power Dissipation
2.5
6
5
ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
0.5
4
3
2
1
o
TA=25 C
0.0
0
20
40
o
60
0
80 100 120 140 160
0
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
10
Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
100
ID - Drain Current (A)
TA=25 C,VG=10V
300µs
1ms
10ms
1
100ms
1s
0.1
DC
O
TA=25 C
0.01
0.01
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
4
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APM4532K
Typical Operating Characteristics (Cont.)
N-Channel
Output Characteristics
Drain-Source On Resistance
20
100
VGS=5,6,7,8,9,10V
90
RDS(ON) - On - Resistance (mΩ)
18
ID - Drain Current (A)
16
14
12
4V
10
8
6
4
3V
2
0
80
VGS=4.5V
70
60
50
40
VGS=10V
30
20
10
0
1
2
3
4
0
5
0
4
8
12
16
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.6
20
20
IDS=250µΑ
Normalized Threshold Voltage
18
ID - Drain Current (A)
16
14
12
10
8
o
Tj=125 C
6
o
Tj=-55 C
o
4
Tj=25 C
1.4
1.2
1.0
0.8
0.6
0.4
2
0
0
1
2
3
4
5
0.2
-50 -25
6
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
5
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APM4532K
Typical Operating Characteristics (Cont.)
N-Channel
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
VGS = 10V
10
IDS = 5A
1.6
o
IS - Source Current (A)
Normalized On Resistance
1.8
20
1.4
1.2
1.0
0.8
Tj=150 C
o
Tj=25 C
1
0.6
o
0.4
-50 -25
RON@Tj=25 C: 35mΩ
0
25
50
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
700
Frequency=1MHz
VDS=10V
9
IDS= 5A
VGS - Gate - source Voltage (V)
C - Capacitance (pF)
600
500
Ciss
400
300
200
Coss
100
0
Crss
0
5
10
15
20
25
7
6
5
4
3
2
1
0
30
0
3
6
9
12
15
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
8
6
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APM4532K
Typical Operating Characteristics (Cont.)
P-Channel
Power Dissipation
Drain Current
4
2.5
3
-ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
2
1
0.5
o
TA=25 C,VG=-10V
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
Normalized Transient Thermal Resistance
10
Lim
it
300µs
Rd
s(o
n)
-ID - Drain Current (A)
20
Tj - Junction Temperature (°C)
100
1ms
10ms
1
100ms
1s
0.1
DC
O
TA=25 C
0.01
0.01
0
0.1
1
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
2
Mounted on 1in pad
o
RθJA : 62.5 C/W
1E-3
0.01
0.1
1
10 30
Square Wave Pulse Duration (sec)
7
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APM4532K
Typical Operating Characteristics (Cont.)
P-Channel
Output Characteristics
Drain-Source On Resistance
14
240
VGS= -5,-6,-7,-8,-9,-10V
220
RDS(ON) - On - Resistance (mΩ)
-ID - Drain Current (A)
12
10
8
-4V
6
4
2
-3V
200
VGS= -4.5V
180
160
140
120
VGS= -10V
100
80
60
40
20
0
0
1
2
3
4
0
5
4
6
8
10
12
-ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
1.8
14
IDS= -250µΑ
1.6
Normalized Threshold Voltage
12
o
-ID - Drain Current (A)
2
-VDS - Drain - Source Voltage (V)
14
Tj=-55 C
10
o
Tj=125 C
o
Tj=25 C
8
6
4
2
0
0
0
1
2
3
4
5
6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
7
-VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
1.4
0
25
50
75 100 125 150
Tj - Junction Temperature (°C)
8
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APM4532K
Typical Operating Characteristics (Cont.)
P-Channel
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
20
VGS = -10V
o
1.4
-IS - Source Current (A)
Normalized On Resistance
10
IDS = -3.5A
1.6
1.2
1.0
0.8
0.6
Tj=150 C
o
Tj=25 C
1
0.1
o
0.4
-50 -25
RON@Tj=25 C: 85mΩ
0
25
50
0.04
0.0
75 100 125 150
0.8
1.2
1.6
2.0
Tj - Junction Temperature (°C)
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
800
VDS= -10V
Frequency=1MHz
9
-VGS - Gate - source Voltage (V)
700
600
C - Capacitance (pF)
0.4
Ciss
500
400
300
200
Coss
100
IDS= -3.5A
8
7
6
5
4
3
2
1
Crss
0
0
5
10
15
20
25
0
30
1
2
3
4
5
6
7
8
QG - Gate Charge (nC)
-VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
0
9
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APM4532K
Package Information
SOP-8
D
E
E1
SEE VIEW A
h X 45
°
c
A
0.25
b
GAUGE PLANE
SEATING PLANE
A1
A2
e
L
VIEW A
S
Y
M
B
O
L
SOP-8
MILLIMETERS
MIN.
INCHES
MAX.
A
MIN.
MAX.
1.75
0.069
0.004
0.25
0.010
A1
0.10
A2
1.25
b
0.31
0.51
0.012
0.020
c
0.17
0.25
0.007
0.010
D
4.80
5.00
0.189
0.197
E
5.80
6.20
0.228
0.244
E1
3.80
4.00
0.150
0.157
e
0.049
1.27 BSC
0.050 BSC
h
0.25
0.50
0.010
0.020
L
0.40
1.27
0.016
0.050
0
0°
8°
0°
8°
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension “D” does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension “E” does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
10
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APM4532K
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
A
330.0±
2.00
P0
SOP-8
4.0±0.10
H
T1
C
d
D
W
E1
F
12.4+2.00 13.0+0.50
0.05
50 MIN.
1.5 MIN. 20.2 MIN. 12.0±0.30 1.75±0.10 5.5±
-0.00
-0.20
P1
P2
D0
D1
T
A0
B0
K0
1.5+0.10
0.6+0.00
8.0±0.10 2.0±0.05
6.40±0.20 5.20±0.20 2.10±0.20
1.5 MIN.
-0.00
-0.40
(mm)
Devices Per Unit
Package Type
Unit
Quantity
SOP-8
Tape & Reel
2500
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
11
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APM4532K
Taping Direction Information
SOP-8
USER DIRECTION OF FEED
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
ESD
Latch-Up
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9
MIL-STD-883D-3015.7
JESD 78
12
Description
245°C, 5 sec
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
VHBM > 2KV, VMM > 200V
10ms, 1tr > 100mA
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APM4532K
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
Package Thickness
Volume mm
<350
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25°C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3
Volume mm
≥350
<2.5 mm
240 +0/-5°C
≥2.5 mm
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm
<350
3
Volume mm
350-2000
3
3
225 +0/-5°C
225 +0/-5°C
Volume mm
>2000
3
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the
stated classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C)
at the rated MSL level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. B.2 - Sep., 2008
13
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