4X4D
4x4 Silicon Array Detectors
The PIN-4X4D is a 4 by 4 array of superblue enhanced Photodetectors.
Our proprietary design provides virtually complete isolation between all of
the 16 elements. The standard LCC package allows easy integration into
your surface mount applications. Numerous applications include Ratio
and Scattering measurements, as well as Position Sensing. For custom
packages, special electro-optic requirements, or to order these parts in
die form, please contact our Applications group.
APPLICATIONS
FEATURES
•Scattering Measurements
•Position Sensing
•Speedy Response
•Extremely Low Cross-talk
•Surface Mount Design
Typical Spectral Response
0. 60
0. 50
0. 40
0. 30
0. 20
PIN-4X4D
0. 10
UDT-4X4D
0. 00
300
400
500
600
800
900
1000
Responsivity
(A/W)
λp
Capacitance
(pF)
Package
Style ¶
Storage
0V
632nm
1.96
1.4 x 1.4
850
---
0.35
75
50
0.01
5.2e-14
1
-20
~
+80
0V
632nm
Temp.
Range
(˚C)
Crosstalk
Ceramic LCC
1.0
1.0 x 1.0
810
0.35
0.40
35
1.0
0.01
1.0e-14*
0.02%
-20
~
+80
-10 mV
NEP
(W/√Hz)
Operating
0V
Shunt
Resistance
(MΩ)
-20
~
+60
632nm
1100
-20
~
+60
Dimensions (mm)
Area (mm2)
Model Number
Active Area
700
Peak
Responsivity
Wavelength
200
Ceramic LCC
nm
0V
810nm*
typ.
min.
typ.
typ.
min
typ.
typ.
typ.
4 x 4 Array Detectors
PIN-4X4D
UDT-4X4D*
• Non-condensing temperature and storage range, Non-condensing environment.
• All Electro-Optical specifications are given on a per element basis.
• UDT-4X4D: NEP tested at 810nm*
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Mechanical Specifications
4x4 Silicon Array Detectors
PIN-4X4D
Top views are shown
without window
All units in inches.
UDT-4X4D
Top views are shown
without window
All units in inches.
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Photodiode Care and Handling Instructions
AVOID DIRECT LIGHT
Since the spectral response of silicon photodiode includes the visible light region, care must be taken to avoid photodiode exposure to
high ambient light levels, particularly from tungsten sources or sunlight. During shipment from OSI Optoelectronics, your photodiodes are
packaged in opaque, padded containers to avoid ambient light exposure and damage due to shock from dropping or jarring.
AVOID SHARP PHYSICAL SHOCK
Photodiodes can be rendered inoperable if dropped or sharply jarred. The wire bonds are delicate and can become separated from the
photodiode’s bonding pads when the detector is dropped or otherwise receives a sharp physical blow.
CLEAN WINDOWS WITH OPTICAL GRADE CLOTH / TISSUE
Most windows on OSI Optoelectronics photodiodes are either silicon or quartz. They should be cleaned with isopropyl alcohol and a soft
(optical grade) pad.
OBSERVE STORAGE TEMPERATURES AND HUMIDITY LEVELS
Photodiode exposure to extreme high or low storage temperatures can affect the subsequent performance of a silicon photodiode. Storage
temperature guidelines are presented in the photodiode performance specifications of this catalog. Please maintain a non-condensing
environment for optimum performance and lifetime.
OBSERVE ELECTROSTATIC DISCHARGE (ESD) PRECAUTIONS
OSI Optoelectronics photodiodes, especially with IC devices (e.g. Photops) are considered ESD sensitive. The photodiodes are shipped in
ESD protective packaging. When unpacking and using these products, anti-ESD precautions should be observed.
DO NOT EXPOSE PHOTODIODES TO HARSH CHEMICALS
Photodiode packages and/or operation may be impaired if exposed to CHLOROTHENE, THINNER, ACETONE, or TRICHLOROETHYLENE.
INSTALL WITH CARE
Most photodiodes in this catalog are provided with wire or pin leads for installation in circuit boards or sockets. Observe the soldering
temperatures and conditions specified below:
Soldering Iron:
Soldering 30 W or less
Temperature at tip of iron 300°C or lower.
Dip Soldering:
Bath Temperature:
Immersion Time:
Soldering Time:
Vapor Phase Soldering:
DO NOT USE
Reflow Soldering:
DO NOT USE
260±5°C.
within 5 Sec.
within 3 Sec.
Photodiodes in plastic packages should be given special care. Clear plastic packages are more sensitive to environmental stress than those
of black plastic. Storing devices in high humidity can present problems when soldering. Since the rapid heating during soldering stresses
the wire bonds and can cause wire to bonding pad separation, it is recommended that devices in plastic packages to be baked for 24 hours
at 85°C.
The leads on the photodiode SHOULD NOT BE FORMED. If your application requires lead spacing modification, please contact OSI
Optoelectronics Applications group at (310)978-0516 before forming a product’s leads. Product warranties could be voided.
*Most of our standard catalog products are RoHS Compliant. Please contact us for details
World Class Products - Light Sensing Solutions
59
A
a
B
c
=
=
=
=
Distance from top of chip to top of glass.
Photodiode Anode.
Distance from top of glass to bottom of case.
Photodiode Cathode
(Note: cathode is common to case in metal package products unless otherwise noted).
W = Window Diameter.
F.O.V. = Filed of View (see definition below).
2. Dimensions are in inches (1 inch = 25.4 mm).
3. Pin diameters are 0.018 ± 0.002" unless otherwise specified.
4. Tolerances (unless otherwise noted)
General: 0.XX ±0.01"
0.XXX ±0.005"
Chip Centering: ±0.010"
Dimension ‘A’: ±0.015"
5. Windows
All ‘UV’ Enhanced products are provided with QUARTZ glass windows, 0.027 ± 0.002" thick.
All ‘XUV’ products are provided with removable windows.
All ‘DLS’ PSD products are provided with A/R coated glass windows.
All ‘FIL’ photoconductive and photovoltaic products are epoxy filled
instead of glass windows.
Mechanical Drawings
Mechanical Specifications and Die Topography
1. Parameter Definitions:
For Further Assistance
Please Call One of Our Experienced
Sales and Applications Engineers
310-978-0516
- Or visit our website at
www.osioptoelectronics.com
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