http://www.sanken-ele.co.jp
SANKEN ELECTRIC
DKG1020
Aug. 2011
Package
Features
・Low on-state resistance
・Built-in gate protection diode
・SMD PKG
TO252
Applications
・DC / DC converter
・Switching
Key Specifications
・V(BR)DSS =100V (ID=100uA)
・R DS(ON)=52 mΩ max. (VGS=10V, ID=10A)
・R DS(ON)=59 mΩ max. (VGS=4.5V, ID=10A)
Internal Equivalent Circuit
Ｄ(2)
Ｇ(1)
Ｓ(3)
Absolute maximum ratings
(Ta=25°C)
Characteristic
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
100
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
±20
A
Maximum Power Dissipation
PD
40 (Tc= 25°C)
W
Single Pulse Avalanche Energy
EAS *1
62. 5
mJ
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 t o + 150
°C
Maximum Drain to Source dv/dt
dv/dt 1*1
0. 6
V/ns
Peak diode recovery dv/dt
dv/dt 2*2
5
V/ns
Peak diode recovery di/dt
di/dt*2
100
A/μs
*1 VDD=14V, L=1mH, IL=11A, unclamped, See Fig.1
*2 IsD=20A, See Fig.2
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 1
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SANKEN ELECTRIC
DKG1020
Aug. 2011
Electrical characteristics
(Ta=25°C)
Symbol
Drain to Source breakdown Voltage
V(BR)DSS
Gate to Source Leakage Current
IGSS
VGS=±20V
±10
μA
Drain to Source Leakage Current
IDSS
VDS=100V, VGS=0V
100
μA
Gate Threshold Voltage
VTH
VDS=10V, ID=1mA
1.5
2.5
V
Forward Transconductance
Re(yfs)
VDS=10V, IDD=10A
9.0
Static Drain to Source On-Resistance
Test Conditions
Limits
Characteristic
ID=100μA,VGS=0V
MIN
TYP
MAX
100
V
2.0
S
ID=10A, VGS=10V
41
52
ID=10A, VGS=4.5V
45
59
RDS(ON)
mΩ
2200
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
11 0
Turn-On Delay Time
td(on)
40
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Source Charge
Qgd
Source-Drain Diode Forward Voltage
VSD
Source-Drain Diode Reverse Recovery Time
trr
Source-Drain Diode Reverse Recovery Time
Qrr
Tharmal Resistance Junction to Case
Rth(ch-c)
VDS=10V
VGS=0V
f=1MHz
ID=10A, VDD=50V
RG=20Ω, RL=5Ω
VGS=10V
See Fig.3
210
pF
140
ns
280
340
47
VDD=50V
VGS=10V
ID=20V
8
nC
7
ISD=20A,VGS=0V
ISD =20A
ｄi/dt=100A/μs
0.9
1.2
ns
60
nC
3.125
Page 2
V
50
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Unit
°C/W
http://www.sanken-ele.co.jp
SANKEN ELECTRIC
DKG1020
Aug. 2011
Characteristic Curves (Tc=25°C)
ID - VGS characteristics (typical)
ID - VDS characteristics (typical)
VDS=10V
4.5V
20
20
3.5V
VGS=10V
3.0V
15
ID (A)
ID (A)
15
10
10
Tc=-125℃
75℃
5
25℃
5
0
-30℃
0
0
0.5
1
1.5
0
1
2
3
5
VGS （V)
RDS(ON) - Tc characteristics (typical)
RDS(ON) - ID characteristics (typical)
ID=10A
100
60
VGS=4.5V
80
40
VGS=4.5V
60
RDS(ON) (mΩ)
RDS(ON) (mΩ)
4
VDS （V)
40
10V
20
10V
20
0
0
-75 -50 -25
0
25
50
0
75 100 125 150
Tc (℃)
5
10
15
20
ID (A)
Re(yfs) - ID characteristics (typical)
VDS - VGS characteristics (typical)
VDS=10V
1000
1
100
ID=20A
0.5
Re(yfs) (S)
VDS (V)
1.5
10A
Tc=-30℃
25℃
10
75℃
125℃
5A
0
1
0
5
10
15
20
1
10
100
ID （A)
VGS (V)
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 3
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SANKEN ELECTRIC
DKG1020
Aug. 2011
Characteristic Curves (Tc=25°C)
Capacitance - VDS characteristics
VGS=0V
(typical)
f=1MHz
IDR - VSD characteristics (typical)
10000
20
Ciss
15
IDR (A)
Capa (pF)
1000
Coss
100
Tc=125℃
10
75℃
25℃
-30℃
5
Crss
10
0
10
20
30
40
VDS (V)
0
50
0
0.5
1
1.5
VSD （V)
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
Single Pulse
rth(ch-c) (℃/W)
10
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
PW (sec)
SAFE OPARATING AREA
PD-Tc characteristics
Tc=25℃
Single Pulse
50
100
With infinite heatsink
40
PT=100us
10
PT=1ms
ID (A)
ＰＤ (W)
30
20
1
10
0.1
0
0
50
100
150
Tc (℃)
1
10
100
VDS (V)
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 4
1000
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SANKEN ELECTRIC
DKG1020
Fig.1
Aug. 2011
Unclamped Inductive Test Method
EAS=
(b) Waveforms
(a) Test Circuit
Fig.2
1
V(BR)DSS
･L･ILP2・
V(BR)DSS - VDD
2
Diode Reverse Recovery Time Test Method
ISD
trr
di/dt
IRM
VDD
dv/dt 2
V GS
0V
VSD
(b) Waveforms
(a) Test Circuit
Fig.3
Switching Time Test Method
90%
VGS
10%
90%
VDS
10%
td(on)
Duty cycle≤1%
tr
ton
(a) Test Circuit
td(off)
tf
toff
(b) Waveforms
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 5
http://www.sanken-ele.co.jp
SANKEN ELECTRIC
DKG1020
Aug. 2011
Outline
TO252
Pin assignment
(1) Gate
(2) Drain
(3) Source
Weight
Approx.0.33g
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 6