http://www.sanken-ele.co.jp
SANKEN ELECTRIC
２ＳＫ３７１０
Features
･ Low on-state resistance 5.0mΩ VGS=10V
･ Built-in gate protection diode
･SMD PKG
May. 2011
Package
TO220S
Applications
･DC－DC converter
･Mortar drive
Internal Equivalent Circuit
Ｄ(2)
Key Specifications
･V(BR)DSS = 60V (ID=100uA)
･RDS(ON) = 5mΩ max (ID=35A / VGS=10V)
Ｇ(1)
Ｓ(3)
Absolute maximum ratings
(Ta=25°C）
Characteristic
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
±85
A
Pulsed Drain Current
ID(pulse) *１
±170
A
Maximum Power Dissipation
PD
1 0 0 (Tc=2 5 °C)
W
Single Pulse Avalanche Energy
EAS *2
400
mJ
Maximum avalanche current
IAS
25
A
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-5 5 ~ +1 5 0
°C
Maximum Drain to Source dv/dt 1
dv/dt 1*2
0 .5
V/ns
Peak diode recovery dv/dt 2
dv/dt 2*3
3
V/ns
Peak diode recovery di/dt
di/dt*3
100
A/µs
*1 PW≤100µsec. duty cycle≤1％
*2 VDD=20V, L=1mH, IL=25A, unclamped, Rg=50Ω，See Fig.1
*3 ISD=25A，See Fig.2
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 1
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SANKEN ELECTRIC
２ＳＫ３７１０
May. 2011
Electrical characteristics
(Ta=25°C）
Characteristic
Symbol
Test Conditions
Drain to Source breakdown Voltage
V(BR)DSS
ID=100μA
VGS=0V
Gate to Source Leakage Current
IGSS
VGS=±15V
Drain to Source Leakage Current
IDSS
Gate Threshold Voltage
VTH
Forward Transconductance
Re(yfs)
Static Drain to Source On-Resistance
RDS(ON)
Input Capacitance
Ciss
VDS=60V
VGS=0V
VDS=10V,
ID=1mA
VDS=10V
ID=35A
ID=35A,
VGS=10V
Limits
MIN
TYP
MAX
60
Unit
V
2.0
3.4
30
80
5.0
±10
µA
100
µA
4.0
V
S
6.0
mΩ
8400
VDS=10V
Output Capacitance
Coss
VGS=0V
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
ID=35A
tr
RG=22Ω
1200
pF
f=1MHz
Rise Time
930
160
VDD=20V
170
RGS=50Ω
ns
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Diode Forward Voltage
VSD
Source-Drain Diode Reverse Recovery Time
trr
Thermal Resistance Junction to Case
Rth(ch-c)
1.25
°C/W
Thermal Resistance Junction to Ambient
Rth(ch-a)
62.5
°C/W
RL=0.57Ω
VGS=10V
See Fig.3
ISD=50A
VGS=0V
ISD=25A
ｄi/dt=50A/µs
430
185
0.9
65
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 2
1.5
V
ns
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SANKEN ELECTRIC
２ＳＫ３７１０
May. 2011
Characteristic Curves (Tc=25°C)
ID-VDS characteristics (typical)
ID-VGS characteristics (typical)
100
10V
6V
80
80
60
60
ID (A)
ID (A)
VDS=10V
100
8V
40
Tc = 150℃
25℃
-55℃
40
VGS =5V
20
20
0
0
0.0
0.5
1.0
0
1.5
2
RDS(ON)-Tc characteristics (typical)
8
VGS=10V
7
6
10
5
8
RDS(ON) (mΩ )
RDS(ON) (mΩ )
6
RDS(ON)-ID characteristics (typical)
ID=35A
VGS=10V
12
4
VGS (V)
VDS (V)
6
4
2
4
3
2
1
0
0
-75 -50 -25
0
25
50
0
75 100 125 150
Tc (℃)
40
60
80
100
ID (A)
Re(yfs)-ID characteristics (typical)
VDS-VGS characteristics (typical)
1000
1.0
100
VDS (V)
Re(yf s) (S)
1.5
0.5
20
ID=100A
-55℃
25℃
Tc = 150℃
10
ID=70A
ID=35A
0.0
1
1
10
100
1
10
ID (A)
VGS (V)
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 3
100
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SANKEN ELECTRIC
２ＳＫ３７１０
May. 2011
Characteristic Curves (Tc=25°C)
IDR-VSD characteristics (typical)
Capacitance-VDS characteristics
(typical)
VGS=0V
f=1MHz
100000
VGS=0V
100
80
Ciss
IDR (A)
Capacitance (pF)
10000
60
Tc = 150℃
25℃
40
Coss
1000
-55℃
20
Crss
100
0
0
10
20
30
40
0
50
0.2
0.4
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
10
rth(ch-c) (℃/W)
0.6
0.8
1
1.2
VSD (V)
VDS (V)
Single Pulse
1
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
PW (sec)
PD-Ta characteristics (typical)
120
100
With infinite heatsink
PD (W)
80
60
40
20
Without iheatsink
0
0
50
100
150
Ta (℃)
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 4
1.4
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SANKEN ELECTRIC
２ＳＫ３７１０
Fig.1
May. 2011
Unclamped Inductive Test Method
EAS=
V(BR)DSS
1
･L･ILP2・
2
V(BR)DSS  VDD
L
dv/dt 1
V(BR)DSS
IL
V DS
ILp
RG
V DD
V GS
IL
VDD
0V
(ａ) Test Circuit
Fig.2
(b) Waveforms
Diode Reverse Recovery Time Test Method
ISD
trr
di/dt
VDS
D.U.T
ISD
L
IRM
VDD
VDD
dv/dt 2
RG
V GS
0V
VSD
(ａ) Test Circuit
Fig.3
(b) Waveforms
Switching Time Test Method
90%
RL
VGS
10%
ID
VDS
90%
RG
VGS
VDD
VDS
RGS
10%
0V
td(on)
P.W.=10μs
Duty cycle≦1%
tr
td(off)
ton
tf
toff
(b) Waveforms
(ａ) Test Circuit
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 5
http://www.sanken-ele.co.jp
SANKEN ELECTRIC
２ＳＫ３７１０
May. 2011
Outline
TO220S
(1)
(2)
(3)
(1) Gate
(2) Drain
(3) Source
Weight
Approx. 1.4g
The information included herein is believed to be accurate and reliable. However, SANKEN ELECTRIC CO., LTD assumes no
responsibility for its use ; nor for any infringements of patents or other rights of third parties that may result from its use.
Copy Right: SANKEN ELECTRIC CO.,LTD.
Page 6