APM2054NV
N-Channel Enhancement Mode MOSFET
Features
•
Pin Description
20V/5A,
RDS(ON)= 35mΩ (Typ.) @ VGS= 10V
RDS(ON)= 45mΩ (Typ.) @ VGS= 4.5V
G
D
RDS(ON)= 110mΩ (Typ.) @ VGS= 2.5V
•
Super High Dense Cell Design
•
Reliable and Rugged
•
Lead Free and Green Devices Available
S
Top View of SOT-223
(2)
D
(RoHS Compliant)
(1)
G
Applications
•
•
Switching Regulators
Switching Converters
S
(3)
N-Channel MOSFET
Ordering and Marking Information
Package Code
V : SOT-223
Operating Junction Temperature Range
C : -55 to 150 oC
Handling Code
TR : Tape & Reel
Assembly Material
G : Halogen and Lead Free Device
APM2054N
Assembly Material
Handling Code
Temperature Range
Package Code
APM2054N
V:
APM2054N
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements
of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC defines “Green” to
mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
1
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APM2054NV
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Symbol
Parameter
Rating
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±16
ID*
Continuous Drain Current
IDM*
Pulsed Drain Current
IS*
Diode Continuous Forward Current
TJ
Maximum Junction Temperature
V
5
VGS=10V
A
20
A
3
150
TSTG
Storage Temperature Range
PD*
Power Dissipation for Single Operation
RθJA*
Unit
°C
-55 to 150
TA=25°C
1.47
TA=100°C
0.58
Thermal Resistance-Junction to Ambient
W
°C/W
85
Note : *Surface Mounted on 1in pad area, t ≤ 10sec.
2
Electrical Characteristics
Symbol
Parameter
(TA = 25°C unless otherwise noted)
Test Conditions
APM2054NV
Min.
Typ.
Max.
20
-
-
-
-
1
-
-
30
Unit
STATIC CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
a
VSD
a
VDS=16V, VGS=0V
TJ=85°C
V
µA
Gate Threshold Voltage
VDS=VGS, IDS=250µA
0.6
0.9
1.5
V
Gate Leakage Current
VGS=±16V, VDS=0V
-
-
±100
nA
VGS=10V, IDS=5A
-
35
40
VGS=4.5V, IDS=3.5A
-
45
54
VGS=2.5V, IDS=2.5A
-
110
130
ISD=3A, VGS=0V
-
0.85
1.3
-
11
13
-
3.8
-
-
5.2
-
Drain-Source On-state Resistance
Diode Forward Voltage
GATE CHARGE CHARACTERISTICS
Qg
VGS=0V, IDS=250µA
Gate-Source Charge
Qgd
Gate-Drain Charge
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
V
b
Total Gate Charge
Qgs
mΩ
VDS=10V, VGS=4.5V,
IDS=6A
2
nC
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APM2054NV
Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)
Symbol
Parameter
DYNAMIC CHARACTERISTICS
td(ON)
Test Conditions
Turn-On Rise Time
td(OFF)
Turn-Off Delay Time
Min.
Typ.
Max.
-
7
10
-
15
25
-
19
26
-
6
7
-
2.5
-
-
450
-
-
100
-
-
60
-
Unit
b
Turn-On Delay Time
Tr
APM2054NV
Tf
Turn-Off Fall Time
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS=20V,
Frequency=1.0MHz
ns
Ω
pF
Note a : Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note b : Guaranteed by design, not subject to production testing.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
3
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APM2054NV
Typical Operating Characteristics
Drain Current
Power Dissipation
6
1.6
1.4
5
ID - Drain Current (A)
Ptot - Power (W)
1.2
1.0
0.8
0.6
0.4
4
3
2
1
0.2
o
o
0.0
TA=25 C
0
20
40
60
0
80 100 120 140 160
20
40
60
80 100 120 140 160
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
it
Lim
n)
o
(
s
Rd
Normalized Transient Thermal Resistance
ID - Drain Current (A)
0
Tj - Junction Temperature (°C)
100
10
TA=25 C,VG=10V
300µs
1ms
1
10ms
100ms
1s
0.1
DC
o
T =25 C
0.01 A
0.1
1
10
60
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
2
1E-3
1E-4 1E-3 0.01
Mounted on 1in pad
o
RθJA :85 C/W
0.1
1
10
100
Square Wave Pulse Duration (sec)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
2
4
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APM2054NV
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
20
160
VGS= 4, 5, 6, 7, 8, 9, 10V
18
RDS(ON) - On - Resistance (mΩ)
140
ID - Drain Current (A)
16
14
12
3V
10
8
6
4
2
0
120
100
80
60
VGS=4.5V
40
20
0
0
2
4
6
8
10
0
4
8
12
16
VDS - Drain - Source Voltage (V)
ID - Drain Current (A)
Transfer Characteristics
Gate Threshold Voltage
20
1.6
IDS =250µA
Normalized Threshold Voltage
18
16
ID - Drain Current (A)
VGS=10V
2V
20
14
12
10
o
Tj=125 C
8
6
o
Tj=-55 C
o
Tj=25 C
4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
2
0
VGS=2.5V
0
1
2
3
4
0.0
-50 -25
5
25
50
75 100 125 150
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
0
5
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APM2054NV
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.0
IDS = 5A
10
1.8
o
Tj=150 C
IS - Source Current (A)
Normalized On Resistance
2.2
20
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
o
Tj=25 C
0.4
0.2
o
RON@Tj=25 C: 35mΩ
0.0
-50 -25
0
25
50
1
0.0
75 100 125 150
0.6
0.8
1.0
1.2
1.4
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
VDS=10V
Frequency=1MHz
9
ID = 5A
500
VGS - Gate-source Voltage (V)
600
C - Capacitance (pF)
0.4
Tj - Junction Temperature (°C)
700
Ciss
400
300
200
Coss
100
0
0.2
Crss
8
7
6
5
4
3
2
1
0
0
4
8
12
16
20
4
8
12
16
20
24
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
0
6
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APM2054NV
Package Information
SOT-223
D
b2
E
E1
SEE
VIEW A
e
c
0.25°
L
b
0
A
A1
A2
e1
GAUGE PLANE
SEATING PLANE
VIEW A
S
Y
M
B
O
L
SOT-223
MILLIMETERS
MIN.
INCHES
MIN.
MAX.
A
MAX.
0.071
1.80
A1
0.02
0.10
0.001
0.004
A2
1.50
1.70
0.059
0.067
0.033
b
0.66
0.84
0.026
b2
2.90
3.10
0.114
0.122
0.013
c
0.23
0.33
0.009
D
6.30
6.70
0.248
0.264
E
6.70
7.30
0.264
0.287
E1
3.30
3.70
0.130
0.146
e
2.30 BSC
e1
L
0
0.091 BSC
4.60 BSC
0.181 BSC
0.030
0.75
0°
0°
10 °
10 °
Note : 1. Follow from JEDEC TO-261 AA.
2. Dimension D and E1 are determined at the outermost extremes
of the plastic exclusive of mold flash, tie bar burrs, gate burrs,
and interlead flash, but including any mismatch between the top
and bottom of the plastic body.
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
7
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APM2054NV
Carrier Tape & Reel Dimensions
P0
P2
P1
A
B0
W
F
E1
OD0
K0
A0
A
OD1 B
B
T
SECTION A-A
SECTION B-B
H
A
d
T1
Application
SOT-223
A
H
T1
C
d
12.4+2.00 13.0+0.50
320.0±
2.00 50 MIN.
1.5 MIN.
-0.00
-0.20
P0
P1
P2
D0
D1
1.5+0.10
4.00±0.10 8.00±0.10 2.00±0.50
1.5 MIN.
-0.00
D
W
E1
F
20.2 MIN. 12.00±0.30 1.75±0.10 5.50±0.05
T
A0
B0
K0
0.6+0.00
6.90±0.20 7.50±0.20 2.10±0.20
-0.40
(mm)
Devices Per Unit
Package Type
Unit
Quantity
SOT-223
Tape & Reel
2500
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
8
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APM2054NV
Taping Direction Information
SOT-223
USER DIRECTION OF FEED
Reflow Condition
(IR/Convection or VPR Reflow)
tp
TP
Critical Zone
TL to TP
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 °C to Peak
Time
Reliability Test Program
Test item
SOLDERABILITY
HOLT
PCT
TST
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B, A102
MIL-STD-883D-1011.9
9
Description
245°C, 5 sec
1000 Hrs Bias @125°C
168 Hrs, 100%RH, 121°C
-65°C~150°C, 200 Cycles
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APM2054NV
Classification Reflow Profiles
Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5°C of actual
Peak Temperature (tp)
Ramp-down Rate
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6°C/second max.
6°C/second max.
6 minutes max.
Time 25°C to Peak Temperature
Note: All temperatures refer to topside of the package. Measured on the body surface.
8 minutes max.
Table 1. SnPb Eutectic Process – Package Peak Reflow Temperatures
3
Package Thickness
Volume mm
<350
<2.5 mm
≥2.5 mm
240 +0/-5°C
225 +0/-5°C
Volume mm
≥350
3
225 +0/-5°C
225 +0/-5°C
Table 2. Pb-free Process – Package Classification Reflow Temperatures
Package Thickness
Volume mm
<350
3
Volume mm
350-2000
3
Volume mm
>2000
3
<1.6 mm
260 +0°C*
260 +0°C*
260 +0°C*
1.6 mm – 2.5 mm
260 +0°C*
250 +0°C*
245 +0°C*
≥2.5 mm
250 +0°C*
245 +0°C*
245 +0°C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated
classification temperature (this means Peak reflow temperature +0°C. For example 260°C+0°C) at the rated MSL
level.
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
2F, No. 11, Lane 218, Sec 2 Jhongsing Rd.,
Sindain City, Taipei County 23146, Taiwan
Tel : 886-2-2910-3838
Fax : 886-2-2917-3838
Copyright  ANPEC Electronics Corp.
Rev. B.3 - Dec., 2008
10
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