Silicon Germanium BICMOS Technology
p. 3
Transforming MMICs
p. 7
A 2.4 & 5 GHz Dual Band 802.11 WLAN Supporting Data Rates to 108 Mb/s
p. 11
High-Speed Optoelectronic Packaging
p. 15
Integrated Circuits for Fiber Systems
p. 19
Overview of GaAs MMICs for Automotive Radar
p. 29
A Four-Stage Ku-Band 1 Watt PHEMT MMIC Power Amplifier
p. 33
A Compact 30 GHz MMIC High Power Amplifier (3W CW) in Chip and Packaged Form
p. 37
1-Watt Broad Ka-band Ultra Small High Power Amplifier MMICs Using 0.25-[mu]m GaAs p. 40
PHEMTs
Multi-stage G-band (140-220 GHz) IaP HBT Amplifiers
p. 44
Indium Gallium Arsenide Avalanche Photodiodes ... Not Just for Telecom Anymore
p. 51
Monolithic Integration of In[subscript 0.53]Ga[subscript 0.47]As Photodiodes and
p. 55
In[subscript 0.53]Ga[subscript 0.47]As/In[subscript 0.52]Al[subscript 0.48]As HEMTs on GaAs
Substrates for Long Wavelength OEIC Applications
A 40 Gb/s Integrated Differential PIN+TIA with DC Offset Control Using InP SHBT
Technology
p. 59
40GHz Transimpedance Amplifier with Differential Outputs using InP/InGaAs
Heterojunction Bipolar Transistors
p. 63
SiGe Differential Transimpedance Amplifier with 50 GHz Bandwidth
p. 67
Reliability of InGaP Emitter HBTs at High Collector Voltage
p. 73
0.1 [mu]m InGaAs/InAlAs/InP HEMT MMICs - a Flight Qualified Technology
p. 77
High Reliability in Low Noise InGaP Gated PHEMTs
p. 81
Impact of RF stress on Dispersion and Power Characteristics of AlGaS/GaN HEMTs
p. 85
Reliability of Commercial InP HBTs under High Current Density Lifetests
p. 89
A 3-V Fully Differential Distributed Limiting Driver for 40 Gb/s Optical Transmission
Systems
p. 95
An Over 100-GHz InP HEMT Flip-chip Distributed Baseband Amplifier with Inverted
Microstrip Line Structure for Optical Transmission Systems
p. 99
A High Gain-Bandwidth Product InP HEMT Distributed Amplifier with 92 GHz Cut-off
Frequency for 40 Gbit/s Applications and Beyond
p. 103
Adaptive Modeling and Design of Highly Integrated 3D Microwave-Millimeter Wave Radio p. 109
Front-Ends
Direct Up-Conversion MMIC with RF Bandwidth of 4 to 12 GHz
p. 113
A 16 GHz MMIC Image-Rejection Resistive Mixer with InP HEMTs
p. 117
Architectural Trade-offs for SiGe BiCMOS Direct Conversion Receiver Front-ends for
IEEE802.11a
p. 120
RF Power Amplifiers for Wireless Communications
p. 127
Gallium Nitride: Use in High Power Control Applications
p. 131
Product Applications and Technology Directions with SiGe BiCMOS
p. 135
DC and RF Characteristics of Depletion-mode GaAs MOSFET employing a thin Ga[subscript
p. 139
2]O[subscript 3] (GD[subscript 2]O[subscript 3]) Gate Dielectric Layer
Improvement of Microscopic and Macroscopic Uniformity in 4-inch InP Substrate for IC
Application by Vertical Boat Growth
p. 147
1.1 W/mm High Power GaAs/InGaP Composite Channel FET with Asymmetrical LDD structure
p. 151
at 26V Operation
An InP Common-Base Amplifier with Tunable Transimpedance for 40 GB/S Applications p. 155
1.7-W 50-Gbit/s InP HEMT 4:1 Multiplexer 1C with a Multiphase Clock Architecture
p. 159
40 Gbit/High Performance GaAs HEMT High Voltage Modulator Driver for Long Haul Optical
p. 163
Fiber Communications
1.4-THz Gain-Bandwidth Product InP-HEMTs Preamplifier using An Improved
Cherry-Hooper topology
p. 167
InP HBT Ring Oscillator with 2.0ps/stage Gate Delay
p. 171
An MMIC Smart Power Amplifier Of 21% PAE Al 16 dBm Power Level for W-CDMA Mobilep. 181
Communication Terminals
An 8-Watt 3.5 GHz Power Amplifier with Tunable Matching
p. 185
A 4-Watt X-Band Compact Coplanar High Power Amplifier MMIC with 18-dB Gain and 25%
p. PAE
189
X-Band Successive Detection Log Amplifier/Limiter MMIC Implemented in 0.15 [mu]m
Double Recess PHEMT
p. 193
A 23/3-dB Dual-Gain Low-Noise Amplifier for 5-GHz-Band Wireless Applications
p. 197
The Evolution of Test Methodologies for High-speed Digital Communications
Components
p. 203
50-Gbit/s 4-bit Multiplexer/Demultiplexer Chip-set using InP HEMTs
p. 207
STS-768 Multiplexer with Full Rate Output Data Retimer in InP HBT
p. 211
InP DHBT Technology and Design for 40 Gbit/s Full-Rate-Clock Communication Circuits p. 215
Designing High-Speed MMICs and OEICs for 10 Gb/s and 40 Gb/s Optical Transponder p. 221
Front-Ends
Direct Extraction of InGaP/GaAs HBT Large Signal Model
p. 225
Three-Dimensional Analysis of Leakage Currents in III-V HBTs
p. 229
Simulations of Quantum Transport in HEMT using Density Gradient Model
p. 233
Bias Dependence of 0.25[mu]m pHEMT Parasitic Elements As Determined With A Direct p. 237
Extraction Method
Gallium Nitride (GaN) HEMT's: Progress and Potential for Commercial Applications
p. 243
A C-band Fully Organic-Based Transmitter Module
p. 247
High Power Monolithic AlGaN/GaN HEMT Oscillator
p. 251
A Broadband (1-20 GHz) SiGe Monolithic SPDT Switch
p. 255
A New MMIC Sampling Phase Detector Design for Space Applications
p. 259
InP/GaAsSb/InP Double Heterojunction Bipolar Transistors
p. 265
High-Performance and High-Uniformity InP/InGaAs/InP DHBT Technology For
High-Speed Optical Communication Systems
p. 269
Enhanced CDMA Performance from an InGaP/InGaAsN/GaAs N-p-N Double Heterojunction
p. 273
Bipolar Transistor
High Dynamic Range InP HBT Delta-Sigma Analog-to-Digital Converters
p. 279
A 12-GS/s Track-and-Hold Amplifier in InP DHBT Technology
p. 283
44 GHz Fully Integrated and Differential Monolithic VCOs with Wide Tuning Range in
AIInAs/InGaAs/InP DHBT
p. 287
100+ GHz Static Divide-By-2 Circuit in InP-DHBT Technology
p. 291
87 GHz Static Frequency Divider in an InP-based Mesa DHBT Technology
p. 294
Table of Contents provided by Blackwell's Book Services and R.R. Bowker. Used with permission.