Catalytic Stamp Lithography for Sub

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Supplementary Materials
Supplementary Materials for
Electrical and optical interconnection for mechanically stacked
multi- junction solar cells mediated by metal nanoparticle arrays
Hidenori Mizuno, Kikuo Makita, and Koji Matsubara
Research Center for Photovoltaic Technologies, National Institute of Advanced Industrial Science and Technology,
Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Email: [email protected]
S1
Supplementary Materials
1. EDX spectra of the GaAs/Pd/InP stacking
(a)
200
O (K)
180
Pd (L)
160
Counts
In (L)
140
P (K)
120
Ga (K)
As (K)
100
80
60
40
20
0
0
10
20
30
40
Distance (nm)
(b)
P
In
O
Pd
As
Ga
10 nm
Figure S1. (a) EDX spectra of the GaAs/Pd/InP stacking.
(b) Superimpose of the spectra shown in (a) and
the STEM image shown in the main text (Figure 2b). Oxygen peaks (blue line) were observed at the GaAs/Pd
and the Pd/InP interfaces, indicating the presence of oxide layers.
S2
Supplementary Materials
2. Low-magnification STEM image of the GaAs/Pd/InP stacking
Figure S2. STEM image of the GaAs/Pd/InP stacking.
S3
Red arrows indicate the positions of Pd NPs.
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