FDN361BN
30V N-Channel, Logic Level, PowerTrench® MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
• 1.8 A, 30 V.
RDS(ON) = 110 mΩ @ VGS = 10 V
RDS(ON) = 160 mΩ @ VGS = 4.5 V
• Low gate charge
These devices are particularly suited for low voltage
applications in notebook computers, portable phones,
PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are
needed in a very small outline surface mount package.
• Industry standard outline SOT-23 surface mount
package using proprietary SuperSOTTM-3 design for
superior thermal and electrical capabilities
• High performance trench technology for extremely
low RDS(ON)
D
D
S
S
G
G
TM
SuperSOT -3
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
1.4
A
– Continuous
(Note 1a)
– Pulsed
10
Power Dissipation for Single Operation
PD
TJ, TSTG
(Note 1a)
0.5
(Note 1b)
0.46
W
–55 to +150
°C
(Note 1a)
250
°C/W
(Note 1)
75
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
361B
FDN361BN
7’’
8mm
3000 units
©2005 Fairchild Semiconductor Corporation
FDN361BN Rev A(W)
www.fairchildsemi.com
FDN361BN 30V N-Channel, Logic Level, PowerTrench® MOSFET
October 2005
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250 μA
VGS = 0 V,
ID = 250 μA,Referenced to 25°C
Zero Gate Voltage Drain Current
VDS = 24 V,
30
V
26
VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55°C
IGSS
Gate–Body Leakage
On Characteristics
VGS = ±20 V,
VDS = 0 V
ID = 250 μA
mV/°C
1
μA
10
μA
±100
nA
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
RDS(on)
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = 10 V,
ID = 1.4 A
ID = 1.2 A
VGS = 4.5 V,
VGS = 10 V, ID = 1.4 A, TJ = 125°C
VGS = 4.5 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 1.4 A
4
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
145
193
pF
35
47
pF
15
23
pF
1
2.1
3
V
92
120
114
110
160
150
mΩ
3.5
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
Ω
VGS = 15 mV,
f = 1.0 MHz
1.6
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
3
6
ns
8
16
ns
(Note 2)
td(off)
Turn–Off Delay Time
16
29
ns
tf
Turn–Off Fall Time
2
4
ns
1.3
1.8
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V,
VGS = 4.5 V
ID = 1.4 A,
nC
0.5
nC
0.5
nC
Drain–Source Diode Characteristics
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IF = 1.4 A,
IS = 0.42 A
(Note 2)
diF/dt = 100 A/µs
0.8
1.2
11
22
4
V
nS
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%
FDN361BN Rev A(W)
www.fairchildsemi.com
FDN361BN 30V N-Channel, Logic Level, PowerTrench® MOSFET
Electrical Characteristics
5
2.8
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
ID, DRAIN CURRENT (A)
6.0V
4
3
3.5V
2
1
3.0V
2.6
2.4
VGS = 3.5V
2.2
2
1.8
1.6
4.0V
4.5V
1.4
5.0V
1.2
6.0V
10V
1
0.8
0
0
0.5
1
1.5
0
2
1
2
Figure 1. On-Region Characteristics.
5
0.25
ID = 1.4A
VGS = 10V
ID = 0.7A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
0.225
0.2
0.175
TA = 125oC
0.15
0.125
0.1
TA = 25oC
0.075
-50
-25
0
25
50
75
100
125
3
150
4
5
TJ, JUNCTION TEMPERATURE (oC)
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
5
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
3
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
3
2
TA = 125oC
1
25oC
-55oC
0
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
FDN361BN Rev A(W)
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
www.fairchildsemi.com
FDN361BN 30V N-Channel, Logic Level, PowerTrench® MOSFET
Typical Characteristics
10
200
VGS, GATE-SOURCE VOLTAGE (V)
ID =1.4A
VDS = 10V
180
15V
8
CAPACITANCE (pF)
20V
6
4
140
120
100
2
80
60
COSS
40
20
CRSS
0
0
0
0.5
1
1.5
2
2.5
0
3
5
Qg, GATE CHARGE (nC)
15
20
25
30
Figure 8. Capacitance Characteristics.
100
5
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100μs
10
RDS(ON) LIMIT
1ms
10ms
100ms
1
1s
VGS = 10V
SINGLE PULSE
RθJA = 270oC/W
0.1
DC
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
4
3
2
1
0
0.01
0.1
1
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
f = 1 MHz
VGS = 0 V
CISS
160
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
RθJA = 270 C/W
0.1
o
0.1
P(pk)
0.05
t1
0.02
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN361BN Rev A(W)
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FDN361BN 30V N-Channel, Logic Level, PowerTrench® MOSFET
Typical Characteristics
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support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16