VP2106
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
General Description
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The Supertex VP2106 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode
Applications
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Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Ordering Information
Device
VP2106
Package Option
RDS(ON)
ID(ON)
(V)
(max)
(Ω)
(min)
(mA)
-60
12
-500
BVDSS/BVDGS
TO-92
VP2106N3-G
-G indicates package is RoHS compliant (‘Green’)
Pin Configuration
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±20V
Operating and storage temperature
Soldering temperature*
-55 C to +150 C
O
O
300OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
GATE
TO-92 (N3)
Product Marking
S iV P
2106
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92 (N3)
Distance of 1.6mm from case for 10 seconds.
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
VP2106
Thermal Characteristics
ID
ID
Power Dissipation
θjc
IDR†
θja
IDRM
Package
(continuous)†
(mA)
(pulsed)
(mA)
@TA = 25OC
(W)
( C/W)
( C/W)
(mA)
(mA)
TO-92
-250
-800
0.74
125
170
-250
-800
O
O
Notes:
† ID (continuous) is limited by max rated Tj .
Electrical Characteristics (T
A
= 25OC unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
-60
-
-
V
VGS = 0V, ID = -1.0mA
VGS(th)
Gate threshold voltage
-1.5
-
-3.5
V
VGS = VDS, ID= -1.0mA
Change in VGS(th) with temperature
-
5.8
6.5
Gate body leakage
-
-1.0
-100
nA
VGS = ± 20V, VDS = 0V
-
-
-10
µA
VGS = 0V, VDS = Max Rating
-
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
-0.5
-1.0
-
A
VGS = -10V, VDS = -25V
-
11
15
-
9.0
12
-
0.55
1.0
150
200
-
ΔVGS(th)
IGSS
IDSS
Zero gate voltage drain current
ID(ON)
On-state drain current
RDS(ON)
ΔRDS(ON)
Static drain-to-source on-state resistance
Change in RDS(ON) with temperature
Conditions
mV/ C VGS = VDS, ID= -1.0mA
O
Ω
%/OC
VGS = -5.0V, ID = -100mA
VGS = -10V, ID = -500mA
VGS = -10V, ID = -500mA
GFS
Forward transductance
CISS
Input capacitance
-
45
60
COSS
Common source output capacitance
-
22
30
CRSS
Reverse transfer capacitance
-
3.0
8.0
td(ON)
Turn-on delay time
-
4.0
5.0
Rise time
-
5.0
8.0
Turn-off delay time
-
5.0
9.0
Fall time
-
4.0
8.0
Diode forward voltage drop
-
-1.2
-2.0
V
VGS = 0V, ISD = -500mA
Reverse recovery time
-
400
-
ns
VGS = 0V, ISD = -500mA
tr
td(OFF)
tf
VSD
trr
mmho VDS = -25V, ID = -500mA
pF
ns
VGS = 0V,
VDS = -25V,
f = 1.0MHz
VDD = -25V,
ID = -500mA,
RGEN = 25Ω
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
PULSE
GENERATOR
10%
INPUT
-10V
td(ON)
RGEN
90%
t(OFF)
t(ON)
td(OFF)
tr
D.U.T.
tF
0V
OUTPUT
VDD
Output
INPUT
90%
10%
90%
RL
10%
VDD
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2
VP2106
Typical Performance Curves
Output Characteristics
-2.0
Saturation Characteristics
-1.0
VGS = -10V
-1.6
-9V
-0.8
-1.2
ID (amperes)
ID (amperes)
-8V
VGS = -10V
-9V
-8V
-0.8
-0.6
-7V
-0.4
-6V
-7V
-6V
-0.4
-5V
-0.2
-5V
-4V
0
0
-10
-20
-30
-40
VDS (volts)
-0
0
-50
-10
TO-92
TA = 25°C
150
TA = 125°C
100
-8
-6
Power Dissipation vs. Ambient Temperature
PD (watts)
GFS (millisiemens)
200
-4
1.0
TA= -55°C
VDS = 25V
-2
VDS (volts)
Transconductance vs. Drain Current
250
-4V
-3V
0.5
50
0
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
0
25
50
ID (amperes)
75
100
125
150
TA (°C)
Thermal Response Characteristics
Maximum Rated Safe Operating Area
-1.0
1.0
Thermal Resistance (normalized)
TO-92 (pulsed)
ID (amperes)
TO-92 (DC)
-0.1
-0.01
TA = 25°C
-0.001
-0.1
-1.0
-10
VDS (volts)
-100
0.8
0.6
0.4
TO-92
P D = 1.0W
T A = 25°C
0.2
0
0.001
0.01
0.1
1.0
tp (seconds)
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
3
10
VP2106
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
On-Resistance vs. Drain Current
-1.1
20
RDS(ON) (ohms)
BVDSS (normalized)
16
-1.0
VGS = -5V
12
VGS = -10V
8
4
-0.9
0
-50
0
50
100
0
150
-0.2
-0.4
-0.6
-0.8
-1.0
ID (amperes)
Tj (°C)
V(th) and RDS Variation with Temperature
Transfer Characteristics
2.0
-1.0
ID (amperes)
VGS(th) (normalized)
TA = -55°C
-0.8
-0.6
25°C
-0.4
125°C
1.6
RDS(ON) @ -10V, 0.5A
1.2
1.2
1.0
0.8
0.8
V(th)@ 1mA
0.4
-0.2
0.6
0
0
0
-2
-4
-6
-8
-50
-10
0
VGS (volts)
50
100
150
Tj (°C)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
-10
100
f = 1MHz
VGS (volts)
75
C (picofarads)
VDS = -10V
-8
50
CISS
25
VDS = -40V
-6
101 pF
-4
35 pF
-2
COSS
CRSS
0
0
0
-10
-20
-30
VDS (volts)
-40
0
1.0
2.0
QG (nanocoulombs)
● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com
4
RDS(ON) (normalized)
VDS = -25V
1.4
VP2106
3-Lead TO-92 Package Outline (N3)
D
A
1
Seating Plane
2
3
L
b
e1
e
c
Side View
Front View
E1
E
3
1
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
D
E
E1
e
e1
L
MIN
.170
.014†
.014†
.175
.125
.080
.095
.045
.500
NOM
-
-
-
-
-
-
-
-
-
MAX
.210
.022†
.022†
.205
.165
.105
.105
.055
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version D080408.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com.
©2009
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VP2106
A012409
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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Authorized Distributor
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