2N3819
Vishay Siliconix
N-Channel JFET
PRODUCT SUMMARY
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IDSS Min (mA)
v –8
–25
2
2
FEATURES
BENEFITS
APPLICATIONS
D Excellent High-Frequency Gain:
Gps 11 dB @ 400 MHz
D Very Low Noise: 3 dB @ 400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA
D
D
D
D
D
D
D
D
D
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
DESCRIPTION
The 2N3819 is a low-cost, all-purpose JFET which offers good
performance at mid-to-high frequencies. It features low noise
and leakage and guarantees high gain at 100 MHz.
Its TO-226AA (TO-92) package is compatible with various
tape-and-reel options for automated assembly (see
Packaging Information). For similar products in TO-206AF
(TO-72) and TO-236 (SOT-23) packages, see the
2N4416/2N4416A/SST4416 data sheet.
TO-226AA
(TO-92)
S
1
G
2
D
3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 V
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
Notes
a. Derate 2.8 mW/_C above 25_C
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2N3819
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typa
V(BR)GSS
IG = –1 mA , VDS = 0 V
–25
–35
VGS(off)
VDS = 15 V, ID = 2 nA
Max
Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
IDSS
Gate Reverse Current
VDS = 15 V, VGS = 0 V
IGSS
Gate Operating Currentc
Drain Cutoff Current
Drain-Source On-Resistance
Gate-Source Voltage
Gate-Source Forward Voltage
2
VGS = –15 V, VDS = 0 V
TA = 100_C
–8
10
20
mA
–0.002
–2
nA
–0.002
–2
mA
IG
VDG = 10 V, ID = 1 mA
–20
ID(off)
VDS = 10 V, VGS = –8 V
2
rDS(on)
VGS = 0 V, ID = 1 mA
VGS
VDS = 15 V, ID = 200 mA
VGS(F)
IG = 1 mA , VDS = 0 V
V
–3
pA
W
150
–0.5
–2.5
–7.5
V
0.7
Dynamic
Common-Source Forward Transconductancec
gfs
Common-Source Output Conductancec
gos
Common-Source Input Capacitance
Ciss
Common-Source Reverse Transfer Capacitance
Crss
Equivalent Input Noise Voltagec
VDS = 15 V
VGS = 0 V
f = 1 kHz
2
5.5
f = 100 MHz
1.6
5.5
f = 1 kHz
VDS = 15 V, VGS = 0 V, f = 1 MHz
en
VDS = 10 V, VGS = 0 V, f = 100 Hz
6.5
mS
25
50
2.2
8
0.7
4
mS
pF
nV⁄
√Hz
6
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms, duty cycle v2%.
c. This parameter not registered with JEDEC.
NH
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
10
8
6
gfs
12
4
8
IDSS @ VDS = 15 V, VGS = 0 V
gfs @ VDS = 15 V, VGS = 0 V
f = 1 kHz
4
2
0
0
0
–2
–4
–6
–8
VGS(off) – Gate-Source Cutoff Voltage (V)
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7-2
–10
rDS(on) – Drain-Source On-Resistance ( Ω )
16
100
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
400
80
rDS
300
60
gos
200
40
100
20
0
gos – Output Conductance (mS)
IDSS
500
gfs – Forward Transconductance (mS)
IDSS – Saturation Drain Current (mA)
20
0
0
–2
–4
–6
–8
–10
VGS(off) – Gate-Source Cutoff Voltage (V)
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Forward Transconductance
vs. Drain Current
Gate Leakage Current
100 nA
10
5 mA
VGS(off) = –3 V
gfs – Forward Transconductance (mS)
1 mA
10 nA
IG – Gate Leakage
0.1 mA
1 nA
TA = 125_C
IGSS @
125_C
100 pA
5 mA
1 mA
10 pA
0.1 mA
TA = 25_C
1 pA
IGSS @ 25_C
0.1 pA
8
TA = –55_C
6
25_C
4
125_C
2
0
0
10
20
0.1
1
VDG – Drain-Gate Voltage (V)
10
ID – Drain Current (mA)
Output Characteristics
Output Characteristics
15
10
VGS(off) = –2 V
VGS(off) = –3 V
12
8
VGS = 0 V
6
ID – Drain Current (mA)
ID – Drain Current (mA)
VDS = 10 V
f = 1 kHz
–0.2 V
–0.4 V
4
–0.6 V
–0.8 V
2
–1.0 V
–1.2 V
0
–1.4 V
VGS = 0 V
–0.3 V
9
–0.6 V
–0.9 V
6
–1.2 V
–1.5 V
3
–1.8 V
2
0
4
6
8
0
2
0
10
VDS – Drain-Source Voltage (V)
4
6
8
10
VDS – Drain-Source Voltage (V)
Transfer Characteristics
Transfer Characteristics
10
10
VGS(off) = –2 V
VDS = 10 V
VGS(off) = –3 V
VDS = 10 V
8
8
ID – Drain Current (mA)
ID – Drain Current (mA)
TA = –55_C
TA = –55_C
25_C
6
125_C
4
25_C
6
125_C
4
2
2
0
0
0
–0.4
–0.8
–1.2
–1.6
VGS – Gate-Source Voltage (V)
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
–2
0
–0.6
–1.2
–1.8
–2.4
–3
VGS – Gate-Source Voltage (V)
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7-3
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltgage
10
10
VDS = 10 V
f = 1 kHz
VGS(off) = –3 V
8
gfs – Forward Transconductance (mS)
gfs – Forward Transconductance (mS)
VGS(off) = –2 V
TA = –55_C
6
25_C
4
125_C
2
0
8
TA = –55_C
6
25_C
4
125_C
2
0
0
–0.4
–0.8
–1.2
–1.6
–2
0
On-Resistance vs. Drain Current
–2.4
–3
Circuit Voltage Gain vs. Drain Current
100
TA = –55_C
g fs R L
AV + 1 ) R g
L os
Assume VDD = 15 V, VDS = 5 V
80
240
VGS(off) = –2 V
AV – Voltage Gain
rDS(on) – Drain-Source On-Resistance ( Ω )
–1.8
VGS – Gate-Source Voltage (V)
300
180
–3 V
120
RL +
60
10 V
ID
VGS(off) = –2 V
40
60
20
0
0
–3 V
0.1
1
10
0.1
1
10
ID – Drain Current (mA)
ID – Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
3.0
Crss – Reverse Feedback Capacitance (pF)
f = 1 MHz
4
Ciss – Input Capacitance (pF)
–1.2
–0.6
VGS – Gate-Source Voltage (V)
VDS = 0 V
3
2
VDS = 10 V
1
0
f = 1 MHz
2.4
1.8
VDS = 0 V
1.2
VDS = 10 V
0.6
0
0
–4
–8
–12
–16
VGS – Gate-Source Voltage (V)
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7-4
VDS = 10 V
f = 1 kHz
–20
0
–4
–8
–12
–16
–20
VGS – Gate-Source Voltage (V)
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
2N3819
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Input Admittance
Forward Admittance
100
100
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
bis
10
10
gfs
(mS)
(mS)
gis
1
–bis
1
0.1
100
200
500
0.1
100
1000
f – Frequency (MHz)
1000
Output Admittance
10
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
500
f – Frequency (MHz)
Reverse Admittance
10
200
–brs
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
bos
1
gos
(mS)
(mS)
1
–grs
0.1
0.1
0.01
100
200
500
0.01
100
1000
f – Frequency (MHz)
Equivalent Input Noise Voltage vs. Frequency
1000
Output Conductance vs. Drain Current
20
VDS = 10 V
VGS(off) = –3 V
gos – Output Conductance (mS)
VGS(off) = –3 V
Hz
500
f – Frequency (MHz)
20
en – Noise Voltage nV /
200
16
12
8
ID = 5 mA
4
VDS = 10 V
f = 1 kHz
16
TA = –55_C
12
25_C
8
125_C
4
ID = IDSS
0
10
100
1k
f – Frequency (Hz)
Document Number: 70238
S–04028—Rev. D ,04-Jun-01
10 k
100 k
0
0.1
1
10
ID – Drain Current (mA)
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7-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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