J304/305
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
VGS(off) (V)
V(BR)GSS Min (V)
gfs Min (mS)
IDSS Min (mA)
J304
−2 to −6
−30
4.5
5
J305
−0.5 to −3
−30
3
1
FEATURES
BENEFITS
D Excellent High Frequency Gain: J304,
Gps 11 dB (typ) @ 400 MHz
D Very Low Noise: 3.8 dB (typ) @
400 MHz
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA
D
D
D
D
D
APPLICATIONS
Wideband High Gain
Very High System Sensitivity
High Quality of Amplification
High-Speed Switching Capability
High Low-Level Signal Amplification
D
D
D
D
High-Frequency Amplifier/Mixer
Oscillator
Sample-and-Hold
Very Low Capacitance Switches
DESCRIPTION
The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).
For similar products in TO-236 (SOT-23) packages, see the
2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.
TO-226AA
(TO-92)
S
1
D
2
G
3
Top View
ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30 V
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
Notes
a. Derate 2.8 mW/_C above 25_C
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J304/305
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J304
Parameter
Symbol
Test Conditions
Typa
Min
V(BR)GSS
IG = −1 mA , VDS = 0 V
−35
−30
VGS(off)
VDS = 15 V, ID = 1 nA
J305
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain
Currentb
Gate Reverse Current
Gate Operating
Currentb
IDSS
−2
VDS = 15 V, VGS = 0 V
5
VGS = −20 V, VDS = 0 V
IGSS
−2
TA = 100_C
V
−30
−6
−0.5
15
1
−100
−3
V
8
mA
−100
pA
−0.2
nA
IG
VDG = 10 V, ID = 1 mA
−20
ID(off)
VDS = 10 V, VGS = −6 V
2
Drain-Source On-Resistance
rDS(on)
VGS = 0 V, ID = 300 mA
200
W
Gate-Source Forward Voltage
VGS(F)
IG = 1 mA , VDS = 0 V
0.7
V
Drain Cutoff Current
pA
Dynamic
Common-Source
Forward Transconductance
gfs
Common-Source
Output Conductance
gos
Common-Source Input Capacitance
Ciss
Common-Source
Reverse Transfer Capacitance
Crss
Common-Source
Output Capacitance
Coss
Equivalent Input Noise Voltage
7.5
4.5
mS
3
VDS = 15 V
V, VGS = 0 V,
V f = 1 kHz
50
50
mS
2.2
0.7
VDS = 15 V, VGS = 0 V
f = 1 MHz
pF
p
1
VDS = 10 V, VGS = 0 V
f = 100 Hz
en
nV⁄
√Hz
10
TYPICAL HIGH-FREQUENCY SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits (Typ)
J304
J305
Symbol
Test Conditions
100
MHz
400
MHz
100
MHz
Common-Source Input Conductance
giss
VDS = 15 V, VGS = 0 V
80
800
80
mS
Common-Source Input Susceptance
biss
2
7.5
2
mS
Common-Source Output Conductance
goss
mS
Common-Source Output Susceptance
boss
Parameter
400
MHz
Unit
High-Frequency
Common-Source Forward Transconductance
gfs
Common-Source Power Gain
Gps
Noise Figure
NF
VDS = 15 V
V, VGS = 0 V
VDS = 15 V, ID = 5 mA
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms, duty cycle v2%.
RG = 1 kW
60
80
60
0.8
3.6
0.8
4.4
4.2
3
20
11
1.7
3.8
mS
dB
NH
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 70236
S-50077—Rev. E, 24-Jan-05
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
10
6
gfs
12
4
8
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
4
2
0
0
0
−2
−4
−6
−8
rDS @ ID = 300 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V
rDS
300
200
20
100
10
0
0
0
−10
10
−6
VGS(off) = −3 V
gfs − Forward Transconductance (mS)
0.1 mA
TA = 125_C
IGSS
@
125_C
100 pA
5 mA
1 mA
10 pA
0.1 mA
TA = 25_C
IGSS @ 25_C
0.1 pA
−8
−10
VDS = 10 V
f = 1 kHz
8
TA = −55_C
6
25_C
4
125_C
2
0
0
4
8
12
16
0.1
20
1
VDG − Drain-Gate Voltage (V)
10
ID − Drain Current (mA)
Output Characteristics
Output Characteristics
15
10
VGS(off) = −2 V
VGS(off) = −3 V
12
8
ID − Drain Current (mA)
VGS = 0 V
ID − Drain Current (mA)
−4
Common-Source Forward Transconductance
vs. Drain Current
1 mA
1 pA
−2
Gate Leakage Current
5 mA
1 nA
30
gos
VGS(off) − Gate-Source Cutoff Voltage (V)
10 nA
50
40
f = 1 kHz
400
VGS(off) − Gate-Source Cutoff Voltage (V)
100 nA
IG − Gate Leakage (A)
rDS(on) − Drain-Source On-Resistance ( Ω )
8
500
g os− Output Conductance ( µS)
IDSS
gfs − Forward Transconductance (mS)
IDSS − Saturation Drain Current (mA)
20
16
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
−0.2 V
6
−0.4 V
4
−0.6 V
−0.8 V
−1.0 V
−1.2 V
2
VGS = 0 V
−0.3 V
9
−0.6 V
−0.9 V
6
−1.2 V
−1.5 V
3
−1.8 V
−1.4 V
0
0
2
4
6
VDS − Drain-Source Voltage (V)
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
8
0
10
0
2
4
6
8
10
VDS − Drain-Source Voltage (V)
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J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
Transfer Characteristics
10
10
VGS(off) = −2 V
VDS = 10 V
VGS(off) = −3 V
8
TA = −55_C
ID − Drain Current (mA)
ID − Drain Current (mA)
8
25_C
6
125_C
4
TA = −55_C
6
25_C
125_C
4
2
2
0
0
0
−0.4
−0.8
−1.2
−1.6
0
−2
−0.6
Transconductance vs. Gate-Source Voltage
VGS(off) = −2 V
VDS = 10 V
f = 1 kHz
8
TA = −55_C
6
25_C
4
125_C
2
−2.4
−3
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
8
TA = −55_C
6
25_C
4
125_C
2
0
0
0
−0.4
−0.8
−1.2
−1.6
0
−2
VGS − Gate-Source Voltage (V)
−0.6
−1.2
−1.8
−2.4
−3
VGS − Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
100
300
g fs R L
AV + 1 ) R g
L os
TA = 25_C
80
240
VGS(off) = −2 V
AV − Voltage Gain
rDS(on) − Drain-Source On-Resistance ( Ω )
−1.8
Transconductance vs. Gate-Source Voltgage
10
gfs − Forward Transconductance (mS)
gfs − Forward Transconductance (mS)
10
−1.2
VGS − Gate-Source Voltage (V)
VGS − Gate-Source Voltage (V)
180
120
VGS(off) = −3 V
1
ID − Drain Current (mA)
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Assume VDD = 15 V, VDS = 5 V
RL +
60
10
0
10 V
ID
VGS(off) = −2 V
40
20
60
0
0.1
4
VDS = 10 V
VGS(off) = −3 V
0.1
1
10
ID − Drain Current (mA)
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
3
5
Crss − Reverse Feedback Capacitance (pF)
f = 1 MHz
Ciss − Input Capacitance (pF)
4
3
VDS = 0 V
2
VDS = 10 V
1
0
0
−4
−8
−12
−16
f = 1 MHz
2.4
1.8
VDS = 0 V
1.2
VDS = 10 V
0.6
0
0
−20
VGS − Gate-Source Voltage (V)
100
−12
−16
−20
Forward Admittance
100
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
bis
10
−8
VGS − Gate-Source Voltage (V)
Input Admittance
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
−4
10
gfs
(mS)
(mS)
gis
1
0.1
100
−bfs
1
200
500
0.1
100
1000
f − Frequency (MHz)
1000
500
f − Frequency (MHz)
Reverse Admittance
Output Admittance
10
10
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
200
bos
−brs
1
gos
(mS)
(mS)
1
−grs
0.1
0.1
TA = 25_C
VDS = 15 V
VGS = 0 V
Common Source
0.01
100
0.01
200
500
f − Frequency (MHz)
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
1000
100
200
500
1000
f − Frequency (MHz)
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J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Equivalent Input Noise Voltage vs. Frequency
20
Output Conductance vs. Drain Current
20
VGS(off) = −3 V
VDS = 10 V
en − Noise Voltage nV /
Hz
gos − Output Conductance (µS)
16
12
8
ID = 5 mA
4
16
TA = −55_C
12
25_C
8
125_C
4
VDS = 10 V
f = 1 kHz
VGS = 0 V
0
0
10
100
1k
f − Frequency (Hz)
10 k
100 k
0.1
1
10
ID − Drain Current (mA)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70236.
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Document Number: 70236
S-50077—Rev. E, 24-Jan-05
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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