2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
V(BR)DSS Min (V)
2N7000
2N7002
rDS(on) Max (W)
VGS(th) (V)
ID (A)
5 @ VGS = 10 V
0.8 to 3
0.2
7.5 @ VGS = 10 V
1 to 2.5
0.115
5.5 @ VGS = 10 V
0.8 to 2.5
0.225
VQ1000P
5.5 @ VGS = 10 V
0.8 to 2.5
0.225
BS170
5 @ VGS = 10 V
0.8 to 3
0.5
60
VQ1000J
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
Low On-Resistance: 2.5 W
Low Threshold: 2.1 V
Low Input Capacitance: 22 pF
Fast Switching Speed: 7 ns
Low Input and Output Leakage
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
TO-226AA
(TO-92)
S
TO-236
(SOT-23)
1
G
G
1
3
2
S
D
D
2
3
Top View
Top View
Marking Code: 72wll
2N7000
72 = Part Number Code for 2N7002
w = Week Code
ll = Lot Traceability
Dual-In-Line
N
D1
1
14
D4
S1
2
13
S4
G1
3
12
G4
4
11
G2
5
10
G3
S2
6
9
S3
D2
7
8
D3
NC
N
Top View
Plastic: VQ1000J
Sidebraze: VQ1000P
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
N
NC
TO-92-18RM
(TO-18 Lead Form)
D
1
G
2
N
S
3
Top View
BS170
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11-1
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single
Parameter
Drain-Source Voltage
Gate-Source Voltage—Non-Repetitive
Gate-Source Voltage—Continuous
Continuous Drain Current
(TJ = 150_C)
TA= 25_C
TA= 100_C
Pulsed Drain Currenta
Power Dissipation
Symbol
2N7000
2N7002
VQ1000J
VQ1000P
VDS
60
60
60
60
VGSM
"40
"40
"30
VGS
"20
"20
"20
"20
ID
IDM
TA= 25_C
TA= 100_C
Thermal Resistance, Junction-to-Ambient
Operating Junction and
Storage Temperature Range
Total Quad
PD
RthJA
VQ1000J/P
BS170
"25
V
"20
0.2
0.115
0.225
0.225
0.5
0.13
0.073
0.14
0.14
0.175
0.5
0.8
1
1
0.4
0.2
1.3
1.3
2
0.16
0.08
0.52
0.52
0.8
312.5
625
96
96
62.5
TJ, Tstg
Unit
60
A
0.83
W
156
_C/W
_C
–55 to 150
Notes
a. Pulse width limited by maximum junction temperature.
b. tp v 50 ms.
SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000
Parameter
Symbol
Test Conditions
Typa
Min
Max
2N7002
Min
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V(BR)DSS
VGS(th)
IGSS
VGS = 0 V, ID = 10 mA
70
60
VDS = VGS, ID = 1 mA
2.1
0.8
VDS = VGS, ID = 0.25 mA
2.0
IDSS
V
1
VDS = 0 V, VGS = "15 V
"100
Drain-Source On-Resistanceb
ID(on)
rDS(on)
VDS = 60 V, VGS = 0 V
1
0.35
VDS = 7.5 V, VGS = 10 V
1
VGS = 4.5 V, ID = 0.075 A
4.5
VGS = 5 V, ID = 0.05 A
3.2
7.5
5.8
13.5
VGS = 10 V, ID = 0.5 A
TJ = 125_C
Forward Transconductanceb
gfs
VDS = 10 V, ID = 0.2 A
Common Source Output Conductanceb
gos
VDS = 5 V, ID = 0.05 A
m
mA
500
VDS = 10 V, VGS = 4.5 V
TC = 125_C
nA
1
1000
TC = 125_C
TC = 125_C
On-State Drain Currentb
2.5
"10
VDS = 0 V, VGS = "20 V
VDS = 48 V, VGS = 0 V
Zero Gate Voltage Drain Current
60
3
0.075
A
0.5
5.3
2.4
5
4.4
9
100
W
7.5
13.5
80
mS
0.5
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
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11-2
VDS = 25 V, VGS = 0 V
f = 1 MHz
22
60
50
11
25
25
2
5
5
pF
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000
2N7002
Symbol
Test Conditions
Typa
Turn-On Time
tON
10
tOFF
VDD = 15 V, RL = 25 W
ID ^0.5 A, VGEN = 10 V, RG = 25 W
7
Turn-Off Time
7
10
Turn-On Time
tON
7
20
Turn-Off Time
tOFF
VDD = 30 V, RL = 150 W
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W
11
20
Parameter
Min
Max
Min
Max
Unit
Switchingd
ns
SPECIFICATIONSĊVQ1000J/P AND BS170 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VQ1000J/P
Parameter
Typa
Symbol
Test Conditions
Min
V(BR)DSS
VGS = 0 V, ID = 100 mA
70
60
VGS(th)
VDS = VGS, ID = 1 mA
2.1
0.8
BS170
Max
Min
2.5
0.8
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
VDS = 0 V, VGS = "10 V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-Resistanceb
IDSS
VDS = 25 V, VGS = 0 V
0.5
500
10
VDS = 10 V, VGS = 10 V
1
VGS = 5 V, ID = 0.2 A
4
VGS = 10 V, ID = 0.2 A
2.3
VGS = 10 V, ID = 0.3 A
2.3
5.5
4.2
7.6
TJ = 125_C
gfs
Common Source Output Conductanceb
gos
mA
m
0.5
A
7.5
5
VDS = 10 V, ID = 0.2 A
W
100
VDS = 10 V, ID = 0.5 A
VDS =5 V, ID = 0.05 A
V
nA
"10
VDS = 60 V, VGS = 0 V
rDS(on)
Forward Transconductanceb
"500
VDS = 0 V, VGS = "15 V
VDS = 48 V, VGS = 0 V, TJ = 125_C
ID(on)
3
"100
TJ = 125_C
IGSS
60
100
mS
0.5
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
22
60
11
25
2
5
VDD = 15 V, RL = 23 W
ID ^ 0.6 A, VGEN = 10 V, RG = 25 W
7
10
7
10
VDD = 25 V, RL = 125 W
ID ^ 0.2 A, VGEN = 10 V, RG = 25 W
7
10
7
10
VDS =25 V, VGS = 0 V
f = 1 MHz
60
pF
Switchingd
Turn-On Time
tON
Turn-Off Time
tOFF
Turn-On Time
tON
Turn-Off Time
tOFF
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW v80 ms duty cycle v1%.
c. This parameter not registered with JEDEC.
d. Switching time is essentially independent of operating temperature.
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
ns
VNBF06
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11-3
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
Transfer Characteristics
1.0
1.0
6.5 V
VGS = 10, 9, 8, 7 V
0.8
0.8
6V
ID – Drain Current (A)
ID – Drain Current (A)
TJ = –55_C
5.5 V
0.6
5V
0.4
4.5 V
4V
0.2
3.5 V
3V
0
1
2
3
4
5
125_C
0.4
0.2
2.5 V
2, 1 V
0.0
25_C
0.6
0.0
6
0
1
2
VDS – Drain-to-Source Voltage (V)
3
5
6
7
8
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
7
60
VGS = 0 V
f = 1 MHz
6
50
rDS @ 5 V = VGS
5
C – Capacitance (pF)
rDS(on) – On-Resistance ( Ω )
4
4
3
rDS @ 10 V = VGS
2
40
30
Ciss
20
Coss
10
1
Crss
0
0.0
0
0.2
0.4
0.6
0.8
0
1.0
5
ID – Drain Current (A)
15
20
25
30
35
VDS – Drain-to-Source Voltage (V)
Gate Charge
20
10
2.0
On-Resistance vs. Junction Temperature
12
VDS = 30 V
8
4
0
0
400
800
1200
1600
Qg – Total Gate Charge (pC)
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11-4
VGS = 10 V, rDS @ 0.5 A
16
rDS(on) – On-Resistance ( Ω )
(Normalized)
VGS – Gate-to-Source Voltage (V)
ID = 0.5 A
2000
2400
1.5
1.0
VGS = 5 V, rDS @ 0.05 A
0.5
0.0
–55
–30
–5
20
45
70
95
120
145
TJ – Junction Temperature (_C)
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.000
rDS(on) – On-Resistance ( Ω )
6
IS – Source Current (A)
TJ = 125_C
0.100
TJ = 25_C
0.010
5
ID = 50 mA
4
500 mA
3
2
1
0
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1.4
2
VSD – Source-to-Drain Voltage (V)
4
6
8
10
12
14
16
18
20
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
0.50
ID = 250 mA
VGS(th) – Variance (V)
0.25
–0.00
–0.25
–0.50
–0.75
–50
–25
0
25
50
75
100
125
150
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, BS170 Only)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
0.01
t1
t2
2. Per Unit Base = RthJA = 156_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
0.01
0.1
1
10
100
1K
10 K
t1 – Square Wave Pulse Duration (sec)
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
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11-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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