IRF540A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
RDS(on) = 0.052 Ω
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 28 A
Improved Gate Charge
Extended Safe Operating Area
TO-220
Ο
175 C Operating Temperature
Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.041 Ω (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
Characteristic
Drain-to-Source Voltage
28
19.8
Ο
Drain Current-Pulsed
VGS
Gate-to-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TL
A
1
O
110
+
_ 20
A
O
1
O
1
O
O3
523
mJ
28
A
2
V
10.7
mJ
6.5
V/ns
Total Power Dissipation (TC=25 C )
107
W
Linear Derating Factor
0.71
W/ C
Ο
TJ , TSTG
V
Continuous Drain Current (TC=100 C)
IDM
PD
Units
100
Continuous Drain Current (TC=25 C)
Ο
ID
Value
Operating Junction and
Ο
- 55 to +175
Storage Temperature Range
Ο
Maximum Lead Temp. for Soldering
C
300
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
R θJC
Junction-to-Case
--
1.4
R θCS
Case-to-Sink
0.5
--
R θJA
Junction-to-Ambient
--
62.5
Units
Ο
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRF540A
Electrical Characteristics (TC=25 C unless otherwise specified)
Ο
Symbol
Characteristic
BVDSS
Drain-Source Breakdown Voltage
∆ BV/ ∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
Min. Typ. Max. Units
100
--
--
V
Ο
0.11
--
V C
2.0
--
4.0
V
Gate-Source Leakage , Forward
--
--
100
Gate-Source Leakage , Reverse
--
--
-100
--
--
10
--
--
100
--
--
0.052
Ω
VGS=10V,ID=14A
4
O
--
Ω
VDS=40V,ID=14A
4
O
Gate Threshold Voltage
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
--
22.56
Ciss
Input Capacitance
--
1320 1710
Coss
Output Capacitance
--
325
380
Crss
Reverse Transfer Capacitance
--
148
170
td(on)
Turn-On Delay Time
--
18
50
Rise Time
--
18
50
Turn-Off Delay Time
--
90
180
Fall Time
--
56
120
Qg
Total Gate Charge
--
60
78
Qgs
Gate-Source Charge
--
10.8
--
Qgd
Gate-Drain(“Miller”) Charge
--
27.9
--
td(off)
tf
VGS=0V,ID=250 µ A
ID=250 µ A
See Fig 7
--
Breakdown Voltage Temp. Coeff.
gfs
tr
Test Condition
nA
µA
pF
VDS=5V,ID=250 µA
VGS=20V
VGS=-20V
VDS=100V
Ο
VDS=80V,TC=150 C
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=50V,ID=28A,
ns
RG=9.1 Ω
See Fig 13
4 O
5
O
VDS=80V,VGS=10V,
nC
ID=28A
See Fig 6 & Fig 12
4 O
5
O
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
IS
Continuous Source Current
--
--
28
ISM
Pulsed-Source Current
1
O
--
--
110
VSD
Diode Forward Voltage
4
O
--
--
1.5
V
TJ=25 C ,IS=28A,VGS=0V
trr
Reverse Recovery Time
--
132
--
TJ=25 C ,IF=28A
Qrr
Reverse Recovery Charge
--
0.63
--
ns
µC
A
Notes ;
Temperature
1
O Repetitive Rating : Pulse Width Limited by Maximum Junction
o
2
L=1mH, I AS=28A, V DD=25V, R G=27 Ω, Starting T J =25 C
O
O3 ISD <_ 28A, di/dt <_ 400A/ µs, V DD<_ BVDSS , Starting T J =25 oC
_2%
4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <
O
Essentially
Independent
of
Operating
Temperature
5
O
Integral reverse pn-diode
in the MOSFET
Ο
Ο
diF/dt=100A/ µs
4
O
N-CHANNEL
POWER MOSFET
IRF540A
Fig 1. Output Characteristics
102
Fig 2. Transfer Characteristics
102
VGS
ID , Drain Current
ID , Drain Current
[A]
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
[A]
Top :
101
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
10-1
100
175 oC
101
25 oC
- 55 oC
3. 250 µs Pulse Test
100
101
2
4
[A]
IDR , Reverse Drain Current
RDS(on) , [Ω]
Drain-Source On-Resistance
Fig 3. On-Resistance vs. Drain Current
0.08
VGS = 10 V
0.04
VGS = 20 V
0.02
@ Note : TJ
= 25 oC
30
60
8
10
90
Fig 4. Source-Drain Diode Forward Voltage
102
101
120
@ Notes :
1. VGS = 0 V
175 oC
25 oC
100
0.4
0.00
0
6
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
0.06
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
0.6
0.8
ID , Drain Current [A]
2. 250 µs Pulse Test
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
C iss
[V]
2000
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
VGS , Gate-Source Voltage
Capacitance
[pF]
2500
1500
C oss
1000
@ Notes :
1. VGS = 0 V
C rss
2. f = 1 MHz
500
00
10
101
VDS , Drain-Source Voltage [V]
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID =28.0 A
0
0
10
20
30
40
50
QG , Total Gate Charge [nC]
60
70
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized)
Drain-Source On-Resistance
BVDSS , (Normalized)
Drain-Source Breakdown Voltage
IRF540A
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75
-50
-25
0
25
50
75
100
125
150
175
3.0
2.5
2.0
1.5
1.0
2. ID = 14.0 A
0.0
-75
200
-25
0
25
50
75
100
125
150
175
200
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
30
[A]
[A]
-50
TJ , Junction Temperature [ oC]
103
Operation in This Area
is Limited by R DS(on)
ID , Drain Current
25
102
10 µs
100 µs
1 ms
10 ms
101
DC
@ Notes :
1. TC = 25 oC
100
10-1
100
20
15
10
5
2. TJ = 175 oC
3. Single Pulse
101
0
25
102
50
75
100
125
Tc , Case Temperature [ oC]
VDS , Drain-Source Voltage [V]
Thermal Response
Fig 11. Thermal Response
100
D=0.5
@ Notes :
1. Zθ J C (t)=1.4 o C/W Max.
2. Duty Factor, D=t1 /t2
0.2
0.1
10- 1
3. TJ M -TC =PD M *Zθ J C (t)
0.05
PDM
0.02
0.01
t1
single pulse
t2
θ
Z JC(t) ,
ID , Drain Current
@ Notes :
1. VGS = 10 V
0.5
10- 2
10- 5
10- 4
10- 3
10- 2
10- 1
t 1 , Square Wave Pulse Duration
100
[sec]
101
150
175
N-CHANNEL
POWER MOSFET
IRF540A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
12V
VGS
Same Type
as DUT
50K Ω
Qg
200nF
10V
300nF
VDS
Qgd
Qgs
VGS
DUT
3mA
R1
R2
Current Sampling (I G)
Resistor
Charge
Current Sampling (I D)
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
Vin
( 0.5 rated V DS )
RG
DUT
Vin
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
BVDSS
IAS
ID
RG
C
DUT
ID (t)
VDD
VDS (t)
VDD
10V
tp
tp
Time
N-CHANNEL
POWER MOSFET
IRF540A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
Driver
VGS
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.