tm
FDS6576
P-Channel 2.5V Specified PowerTrench“ MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is in a rugged
gate version ®of Fairchild Semiconductor's advanced
®
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V - 12V).
–11 A, –20 V. RDS(ON) = 0.014 :@ VGS = –4.5 V
RDS(ON) = 0.020 :@ VGS = –2.5 V
Applications
• Load switch
• Battery protection
• Power management
•
Extended VGSS range (r12V) for battery applications.
•
Low gate charge (43nC typical).
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(ON).
• High power and current handling capability.
• RoHS Compliant.
D
D
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
r 12
V
ID
Drain Current
–11
A
– Continuous
(Note 1a)
– Pulsed
–50
Power Dissipation for Single Operation
PD
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1.0
–55 to +150
qC
Thermal Characteristics
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
qC/W
RTJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
qC/W
RTJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
qC/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6576
FDS6576
13’’
12mm
2500 units
”2006 Fairchild Semiconductor Corporation
FDS6576 Rev E3
FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET
December 2006
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
–20
V
BVDSS
'BVDSS
'TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = –250 PA
Zero Gate Voltage Drain Current
VDS = –16 V, VGS = 0 V
–1
PA
IGSSF
Gate–Body Leakage, Forward
VGS = 12 V, VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –12 V, VDS = 0 V
–100
nA
–1.5
V
On Characteristics
–13
ID = –250 PA, Referenced to 25qC
mV/qC
(Note 2)
–0.6
–0.83
VGS(th)
'VGS(th)
'TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = –4.5 V,
ID = –11 A
VGS = –2.5 V,
ID = –8.8 A
VGS = –4.5 V, ID = –11 A, TJ =125qC
VGS = –4.5 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –4.5 V,
ID = –11 A
50
S
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
4044
pF
VDS = VGS, ID = –250 PA
ID = –250 PA, Referenced to 25qC
3.5
8.2
11.5
11.1
mV/qC
14
20
23
–25
m:
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
955
pF
504
pF
(Note 2)
VDD = –10 V, ID = –1 A,
VGS = –4.5 V,
RGEN = 6 :
VDS = –10 V,
VGS = –4.5 V
ID = –11 A,
18
32
ns
17
31
ns
124
198
ns
79
126
ns
43
60
nC
7
nC
12
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –2.1 A
Voltage
(Note 2)
–0.66
–2.1
A
–1.2
V
Notes:
1. RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJC is guaranteed by design while RTCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
FDS6576 Rev E3
FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET
Electrical Characteristics
2.25
50
4.5V
6.0V
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
40
3.5V
3.0V
30
20
10
2.5V
2
1.75
VGS = 3.0V
1.5
3.5V
1.25
4.5V
6.0V
10V
1
0.75
0
0
0.5
1
1.5
2
0
2.5
10
Figure 1. On-Region Characteristics.
30
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
0.03
ID = 6 A
ID = 12A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.025
0.02
TA = 125oC
0.015
0.01
TA = 25oC
0.6
-50
-25
0
25
50
75
125
100
0.005
150
2
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
TA = -55oC
VDS = 5V
25oC
IS, REVERSE DRAIN CURRENT (A)
50
ID, DRAIN CURRENT (A)
10
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
125oC
40
30
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6576 Rev E3
FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET
Typical Characteristics
3000
VDS = 10V
ID = 12A
15V
f = 1MHz
VGS = 0 V
2500
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
4
2
CISS
2000
1500
1000
COSS
500
CRSS
0
0
0
5
10
15
20
25
30
35
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
20
25
30
P(pk), PEAK TRANSIENT POWER (W)
50
100⼡
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
15
Figure 8. Capacitance Characteristics.
100
1ms
10ms
10
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
RTJA = 125oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
10
SINGLE PULSE
RTJA = 125Ⱌ /W
TA = 25Ⱌ
40
30
20
10
0
0.001
100
0.01
VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RTJA(t) = r(t) + RTJA
RTJA = 125 Ⱌ /W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RTJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6576 Rev E3
FDS6576 P-Channel 2.5V Specified PowerTrench“ MOSFET
Typical Characteristics
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS
WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body, or
(b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I22
FDS6576 Rev E3
Mouser Electronics
Authorized Distributor
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FDS6576