MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD15HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
OUTLINE
3.2+/-0.4
2
9+/-0.4
High power and High Gain:
Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ. on VHF Band
High Efficiency: 55%typ. on UHF Band
1.3+/-0.4
3.6+/-0.2
4.8MAX
FEATURES
DRAWING
9.1+/-0.7
12.3+/-0.6
RD15HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers applica
-tions.
12.3MIN
DESCRIPTION
1.2+/-0.4
0.8+0.10/-0.15
1 2 3
APPLICATION
0.5+0.10/-0.15
5deg
9.5MAX
RoHS COMPLIANT
4.5+/-0.5
2.5 2.5
3.1+/-0.6
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
PINS
1:GATE
2:SOURCE
3:DRAIN
note:
RD15HVF1-101 is a RoHS compliant products.
Torelance of no designation means typical value.
RoHS compliance is indicate by the letter “G” after the lot
Dimension in mm.
marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD15HVF1
MITSUBISHI ELECTRIC
1/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25°C
Zg=Zl=50Ω
junction to case
RATINGS
30
+/-20
48
1.5(Note2)
4
150
-40 to +150
2.6
UNIT
V
V
W
W
A
°C
°C
°C/W
Note 1: Above parameters are guaranteed independently.
Note 2: Over 300MHz use spec is 6W
ELECTRICAL CHARACTERISTICS (Tc=25°C , UNLESS OTHERWISE NOTED)
SYMBOL
IDSS
IGSS
VTH
Pout1
ηD1
Pout2
ηD2
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
Load VSWR tolerance
CONDITIONS
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
VDD=12.5V, Pin=0.6W,
f=175MHz,Idq=0.5A
VDD=12.5V, Pin=3W,
f=520MHz,Idq=0.5A
VDD=15.2V,Po=15W(PinControl)
f=175MHz,Idq=0.5A,Zg=50Ω
Load VSWR=20:1(All Phase)
VDD=15.2V,Po=15W(PinControl)
f=520MHz,Idq=0.5A,Zg=50Ω
Load VSWR=20:1(All Phase)
MIN
1.5
15
55
15
50
LIMITS
TYP MAX.
100
1
2.0
2.5
18
60
18
55
No destroy
No destroy
UNIT
uA
uA
V
W
%
W
%
-
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD15HVF1
MITSUBISHI ELECTRIC
2/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD15HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
10
CHANNEL DISSIPATION
Pch(W)
100
Vgs-Ids CHARACTERISTICS
8
60
6
Ids(A)
80
40
Ta=+25°C
Vds=10V
4
2
20
0
0
0
40
80
120 160 200
AMBIENT TEMPERATURE Ta(°C)
0
Vds-Ids CHARACTERISTICS
8
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
10
6
Vgs=6V
4
Vgs=5V
Ta=+25°C
f=1MHz
60
Ciss(pF)
Ids(A)
8
80
Ta=+25°C
Vgs=3V
0
0
0
2
4
6
Vds(V)
8
40
20
Vgs=4V
2
0
10
Vds VS. Coss CHARACTERISTICS
5
10
Vds(V)
15
20
Vds VS. Crss CHARACTERISTICS
100
10
Ta=+25°C
f=1MHz
80
Ta=+25°C
f=1MHz
8
60
Crss(pF)
Coss(pF)
4
6
Vgs(V)
Vds VS. Ciss CHARACTERISTICS
10
40
6
4
2
20
0
0
0
RD15HVF1
2
5
10
Vds(V)
15
20
0
MITSUBISHI ELECTRIC
3/9
5
10
Vds(V)
15
20
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD15HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
100
Po
Po
20
30
60
ηｄ
Gp
40
20
10
80
ηd
15
60
10
40
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=0.5A
20
5
0
0
0.0
ηd(%)
80
Pout(W) , Idd(A)
40
25
100
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=0.5A
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
50
Pin-Po CHARACTERISTICS
20
Idd
Ｉｄｄ
0
0
10
20
Pin(dBm)
30
0
0.5
40
Pin-Po CHARACTERISTICS
100
25
80
20
100
Po
80
20
40
ηｄ
Gp
10
60
15
Po
Ta=25°C
f=520MHz
Vdd=12.5V
Idq=0.5A
10
20
5
0
0
40
ηd(%)
60
30
Pout(W) , Idd(A)
ηd
ηd(%)
Po(dBm) , Gp(dB) , Idd(A)
Ta=+25°C
f=520MHz
Vdd=12.5V
Idq=0.5A
1.5
Pin(W)
Pin-Po CHARACTERISTICS
50
1.0
20
Idd
Ｉｄｄ
0
10
20
Pin(dBm)
30
40
0
0
1
Vdd-Po CHARACTERISTICS
15
4
20
3
15
Idd
10
2
5
0
4
RD15HVF1
25
6
8
10
Vdd(V)
12
14
Po(W)
Po
5
Idd(A)
Po(W)
20
3
Pin(W)
4
5
6
Vdd-Po CHARACTERISTICS
25
Ta=25°C
f=175MHz
Pin=0.6W
Idq=0.5A
Zg=ZI=50 ohm
2
5
Ta=25°C
f=520MHz
Pin=3W
Idq=0.5A
Zg=ZI=50 ohm
4
Po
3
Idd
10
2
1
5
1
0
0
Idd(A)
0
0
4
MITSUBISHI ELECTRIC
4/9
6
8
10
Vdd(V)
12
14
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD15HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2
10
Vds=10V
Tc=-25~+75°C
Ids(A)
8
-25°C
+25°C
6
+75°C
4
2
0
0
2
4
6
Vgs(V)
8
10
TEST CIRCUIT(f=175MHz)
Vdd
Vgg
C1
9.1kOHM
C3
L3
8.2kOHM
100OHM
C2
175MHz
RD15HVF1
L1
RF-IN
L2
RF-OUT
56pF
82pF
56pF
25pF
10pF 25pF 25pF
7
25pF 25pF 25pF
25pF
7
22
12
40
42
45
62
73
74
92
95
100
100
Note:Board material-Teflon substrate
C1:2200pF 10uF in parallel
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
Dimensions:mm
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
RD15HVF1
MITSUBISHI ELECTRIC
5/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD15HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TEST CIRCUIT(f=520MHz)
Vdd
Vgg
C1
9.1kOHM
8.2kOHM
C3
L3
100OHM
10pF
L1
15pF
C2
520MHz
RD15HVF1
RF-IN
L2
RF-OUT
56pF
56pF
5pF
12pF
7
7
90
90
100
100
Note:Board material-Teflon substrate
C1:2200pF 10uF in parallel
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
Dimensions:mm
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:2Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
RD15HVF1
MITSUBISHI ELECTRIC
6/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD15HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS
f=520MHz Zout
f=520MHz Zin
f=175MHz Zout
Zo=50ohm
f=175MHz Zin
RD15HVF1
Zin , Zout
f
(MHz)
Zin
(ohm)
Zout
(ohm)
Conditions
175
2.34-j8.01
3.06+j0.74
Po=15W, Vdd=12.5V,Pin=0.6W
520
5.42+j9.22
6.02+j12.34
Po=15W, Vdd=12.5V,Pin=3.0W
MITSUBISHI ELECTRIC
7/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD15HVF1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
RD15HVF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA)
Freq.
[MHz]
50
100
150
175
200
250
300
350
400
450
500
520
550
800
850
900
950
1000
1050
RD15HVF1
S11
(mag)
0.717
0.726
0.744
0.748
0.755
0.770
0.787
0.804
0.821
0.838
0.849
0.854
0.862
0.900
0.904
0.909
0.910
0.910
0.911
S21
(ang)
-145.9
-163.9
-171.1
-173.6
-175.9
-179.0
177.6
174.6
171.2
168.2
165.1
163.7
161.7
145.0
141.3
137.9
134.6
131.2
127.5
(mag)
23.274
12.054
8.049
6.804
5.886
4.622
3.731
3.092
2.623
2.229
1.938
1.845
1.695
0.971
0.864
0.790
0.738
0.662
0.612
S12
(ang)
101.8
85.7
74.7
70.2
66.3
58.6
51.5
45.3
39.1
33.2
28.3
26.1
22.9
4.2
0.0
-1.4
-4.4
-6.8
-8.4
(mag)
0.023
0.024
0.025
0.025
0.026
0.030
0.036
0.044
0.053
0.062
0.072
0.076
0.082
0.135
0.143
0.153
0.163
0.170
0.178
MITSUBISHI ELECTRIC
8/9
S22
(ang)
26.0
27.7
36.1
41.8
48.1
57.7
65.3
70.3
73.5
74.6
73.9
73.9
72.6
62.8
59.6
57.8
54.8
51.4
49.4
(mag)
0.556
0.547
0.560
0.571
0.588
0.625
0.647
0.683
0.716
0.734
0.765
0.777
0.788
0.859
0.870
0.877
0.880
0.886
0.892
(ang)
-130.2
-150.4
-157.8
-160.1
-161.8
-164.3
-167.5
-170.9
-173.7
-176.8
179.4
178.0
176.3
159.0
155.7
152.4
149.0
145.7
142.1
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme
short current flow between the drain and the source of the device. These results causes in fire or injury.
RD15HVF1
MITSUBISHI ELECTRIC
9/9
7 Mar 2008