MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD00HHS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,0.3W
OUTLINE DRAWING
RD00HHS1 is a MOS FET type transistor specifically
designed for HF RF amplifiers applications.
4.4+/-0.1
TYPE NAME
0.
1
High power gain
Pout>0.3W, Gp>19dB @Vdd=12.5V,f=30MHz
LOT No.
0.8 MIN 2.5+/-0.1
FEATURES
1.5+/-0.1
1.6+/-0.1
3.9+/-0.3
DESCRIPTION
1
2
1.5+/-0.1
3
0.4 +0.03
-0.05
1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
APPLICATION
0.1 MAX
For output stage of high power amplifiers in HF Band
mobile radio sets.
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD00HHS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel Temperature
Storage temperature
Thermal resistance
CONDITIONS RATINGS UNIT
Vgs=0V
30
V
Vds=0V
V
±10
Tc=25°C
3.1
W
mW
Zg=Zl=50Ω
10
mA
200
°C
150
-40 to +125 °C
°C/W
Junction to case
40
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
IDSS
IGSS
Vth
Pout
ηD
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
CONDITIONS
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
VDD=12.5V, Pin=4mW,
f=30MHz,Idq=50mA
MIN
1
0.3
55
LIMITS
TYP
MAX.
25
1
2
3
0.7
65
-
UNIT
uA
uA
V
W
%
Note : Above parameters , ratings , limits and conditions are subject to change.
RD00HHS1
MITSUBISHI ELECTRIC
1/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD00HHS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,0.3W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
4
Vgs-Ids CHARACTERISTICS
0.6
CHANNEL DISSIPATION
Pch(W)
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
3
0.4
Ids(A)
On PCB(*1) with Heat-sink
2
0.3
0.2
1
0.1
On PCB(*1)
0.0
0
0
0
40
80
120 160 200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
1
2
3
Vgs(V)
4
5
Vds VS. Ciss CHARACTERISTICS
1.4
20
Ta=+25°C
Ta=+25°C
f=1MHz
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
1.0
Vgs=6V
0.8
0.6
Vgs=5V
0.4
15
Ciss(pF)
1.2
Ids(A)
Ta=+25°C
Vds=10V
0.5
10
5
Vgs=4V
0.2
Vgs=3V
0
0.0
0
2
4
6
Vds(V)
8
0
10
Vds VS. Coss CHARACTERISTICS
15
20
4
Ta=+25°C
f=1MHz
Ta=+25°C
f=1MHz
3
Crss(pF)
15
Coss(pF)
10
Vds(V)
Vds VS. Crss CHARACTERISTICS
20
10
2
5
1
0
0
0
RD00HHS1
5
5
10
Vds(V)
15
20
0
MITSUBISHI ELECTRIC
2/6
5
10
Vds(V)
15
20
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD00HHS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,0.3W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
Pin-Po CHARACTERISTICS
Po
20
40
ηｄ
Ta=+25°C
f=30MHz
Vdd=12.5V
Idq=50mA
15
10
-20 -15 -10 -5
0
Pin(dBm)
5
Pout(W) , Idd(A)
60
ηd(%)
Po(dBm) , Gp(dB) ,
Idd(A)
25
90
1.0
80
Gp
ηd
0.8
70
0.6
0.4
20
0.2
0
0.0
Idd
Vdd-Po CHARACTERISTICS
0.6
0.4
40
Po
4
6
Pin(mW)
8
10
+25°C
Vds=10V
Tc=-25~+75°C
+75°C
0.4
80
Idd
50
-25°C
0.5
Ids(A)
Po(W)
0.8
60
Vgs-Ids CHARACTORISTICS 2
Idd(mA)
Ta=25°C
f=30MHz
Pin=4mW
Icq=50mA
Zg=ZI=50 ohm
2
0.6
120
1.0
Ta=25°C
f=30MHz
Vdd=12.5V
Idq=50mA
40
0
10
1.2
80
ηd(%)
Po
30
100
1.2
100
35
0.3
0.2
0.1
0.2
0
0.0
2
4
6
8 10
Vdd(V)
12
0.0
14
0
1
2
3
Vgs(V)
4
5
Vgs-gm CHARACTORISTICS
0.6
Vds=10V
Tc=-25~+75°C
0.5
gm(S)
0.4
-25°C
0.3
+25°C
0.2
+75°C
0.1
0.0
0
RD00HHS1
1
2
3
Vgs(V)
4
5
MITSUBISHI ELECTRIC
3/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD00HHS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,0.3W
TEST CIRCUIT(f=30MHz)
V gg
V dd
330uF,50V
10uF,50V
C2
C1
180pF
L4
82pF
4m m
3m m
13m m
7m m
9m m
9m m
7m m
2.5m m
RF-OUT
RD00HHS 1
1k OHM
RF-IN
8m m
22m m
L3
6m m
L1
470pF
L2
40pF
220pF
14m m
7.5m m
15OHM
15pF
470pF
40pF
10pF
L1:LA L04NAR27(0.27m H)
L2:LA L04NA R39(0.39uH)
L3:LA L04NA R39(0.39uH)
Note:B oard m aterial-glas s epox i s ubs trate
M ic ro s trip line width=1.0m m /50OHM ,er:4.8,t=0.6m m
L4:LAL04NA 1R0(1uH)
C1,C2:100pF,0.022uF,0.1uF in parallel
RD00HHS1
MITSUBISHI ELECTRIC
4/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD00HHS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 30MHz,0.3W
RD00HHS1 S-PARAMETER DATA (@Vdd=12.5V, Id=50mA)
Freq.
[MHz]
10
30
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
RD00HHS1
S11
(mag)
1.002
1.003
1.005
1.007
0.989
0.963
0.936
0.911
0.892
0.872
0.857
0.846
0.834
0.830
0.826
0.821
0.815
0.812
0.814
0.816
0.811
0.814
S21
(ang)
-3.6
-9.9
-16.8
-33.5
-49.8
-64.0
-76.9
-87.9
-97.7
-106.2
-113.7
-120.1
-126.0
-131.0
-135.9
-140.2
-144.0
-147.5
-151.0
-153.9
-156.8
-159.5
(mag)
12.533
12.631
12.784
12.820
12.355
11.571
10.697
9.791
8.972
8.202
7.533
6.921
6.386
5.894
5.484
5.097
4.749
4.443
4.167
3.904
3.670
3.471
S12
(ang)
178.3
174.6
170.6
159.1
147.5
136.8
127.3
119.1
111.4
104.9
98.9
93.4
88.4
83.7
79.3
75.1
71.0
67.3
63.8
60.1
56.8
53.7
(mag)
0.003
0.008
0.013
0.025
0.035
0.042
0.048
0.053
0.055
0.057
0.058
0.058
0.059
0.058
0.057
0.056
0.055
0.053
0.051
0.049
0.048
0.046
MITSUBISHI ELECTRIC
5/6
S22
(ang)
90.3
82.8
79.5
67.4
56.5
47.5
38.2
30.6
24.6
18.5
13.1
8.7
4.7
0.2
-2.8
-6.9
-9.8
-13.0
-15.0
-17.6
-20.8
-22.2
(mag)
0.920
0.919
0.918
0.898
0.866
0.824
0.781
0.745
0.711
0.685
0.665
0.649
0.640
0.630
0.625
0.623
0.623
0.623
0.627
0.630
0.634
0.640
(ang)
-2.7
-6.9
-11.2
-22.4
-32.8
-42.2
-50.4
-57.9
-64.6
-70.2
-75.5
-80.5
-85.2
-89.2
-93.3
-97.1
-100.7
-104.3
-107.7
-110.9
-113.9
-117.1
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
RD00HHS1
Silicon MOSFET Power Transistor 30MHz,0.3W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme
short current flow between the drain and the source of the device. These results causes in fire or injury.
RD00HHS1
MITSUBISHI ELECTRIC
6/6
10 Jan 2006