MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD01MUS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
OUTLINE DRAWING
RD01MUS1 is a MOS FET type transistor specifically
designed for VHF/UHF RF amplifiers applications.
4.4+/-0.1
TYPE NAME
LOT No.
0.8 MIN 2.5+/-0.1
FEATURES
High power gain:
Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz
High Efficiency: 65%typ.
APPLICATION
1.5+/-0.1
1.6+/-0.1
φ
1
2
1.5+/-0.1
3.9+/-0.3
DESCRIPTION
1
0.
3
0.4 +0.03
-0.05
1.5+/-0.1
0.4+/-0.07 0.5+/-0.07 0.4+/-0.07
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
0.1 MAX
Terminal No.
1 : GATE
2 : SOURSE
3 : DRAIN
UNIT : mm
RoHS COMPLIANT
RD01MUS1-101,T113 is a RoHS compliant products.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Channel Temperature
Storage temperature
Thermal resistance
CONDITIONS RATINGS UNIT
Vgs=0V
30
V
Vds=0V
+/-10
V
Tc=25°C
3.6
W
Zg=Zl=50Ω
60
mW
600
mA
°C
150
-40 to +125 °C
°C/W
Junction to case
34.5
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25°C, UNLESS OTHERWISE NOTED)
SYMBOL
PARAMETER
IDSS
IGSS
Vth
Pout
ηD
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
CONDITIONS
VDS=17V, VGS=0V
VGS=10V, VDS=0V
VDS=12V, IDS=1mA
VDD=7.2V, Pin=30mW
f=520MHz,Idq=100mA
MIN
1
0.8
50
LIMITS
TYP
1.8
1.4
65
UNIT
MAX
50
1
3
-
uA
uA
V
W
%
Note : Above parameters , ratings , limits and conditions are subject to change.
RD01MUS1
MITSUBISHI ELECTRIC
1/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD01MUS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
*1:The material of the PCB
Glass epoxy (t=0.6 mm)
On PCB(*1) with Heat-sink
2
1
On PCB(*1)
0.6
0.4
0.2
0.0
0
0
0
40
80
120
160
200
AMBIENT TEMPERATURE Ta(°C)
Vds-Ids CHARACTERISTICS
Vgs=10V
Vgs=9V
Vgs=8V
Ta=+25°C
2
Vgs=7V
Vgs=5V
1
Ciss(pF)
Ids(A)
Vgs=6V
1.5
Vgs=4V
0.5
Vgs=3V
0
0
2
4
6
Vds(V)
8
20
18
16
14
12
10
8
6
4
2
0
4
5
5
10
Vds(V)
15
20
Vds VS. Crss CHARACTERISTICS
4
Ta=+25°C
f=1MHz
Ta=+25°C
f=1MHz
3
Crss(pF)
Coss(pF)
2
3
Vgs(V)
Ta=+25°C
f=1MHz
0
10
Vds VS. Coss CHARACTERISTICS
20
18
16
14
12
10
8
6
4
2
0
1
Vds VS. Ciss CHARACTERISTICS
2.5
2
1
0
0
RD01MUS1
Ta=+25°C
Vds=10V
0.8
3
Ids(A)
CHANNEL DISSIPATION
Pch(W)
4
Vgs-Ids CHARACTERISTICS
1.0
5
10
Vds(V)
15
20
0
MITSUBISHI ELECTRIC
2/6
5
10
Vds(V)
15
20
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD01MUS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
Pin-Po CHARACTERISTICS
Po
Gp
25
1.6
80
70
15
60
10
50
Ta=+25°C
f=520MHz
Vdd=7.2V
Idq=100mA
5
0
-10
ηd(%)
ηｄ
20
40
10
80
1.4
ηd
1.2
60
1.0
0.8
40
Ta=25°C
f=520MHz
Vdd=7.2V
Idq=100mA
0.6
Idd
0.4
20
0.2
0.0
30
0
100
Po
1.8
90
Pout(W) , Idd(A)
30
Po(dBm) , Gp(dB) , Idd(A)
2.0
100
ηd(%)
35
20
0
0
Pin(dBm)
20
40
60
Pin(mW)
Vdd-Po CHARACTERISTICS
4.0
0.8
Ta=25°C
f=520MHz
Pin=30mW
Idq=100mA
Zg=ZI=50 ohm
3.0
0.6
2.5
Po(W)
0.7
0.5
Idd
2.0
0.4
1.5
0.3
1.0
0.2
0.5
0.1
0.0
0.0
4
RD01MUS1
Idd(A)
3.5
Po
6
8
10
Vdd(V)
12
14
MITSUBISHI ELECTRIC
3/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD01MUS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
TEST CIRCUIT(f=520MHz)
Vgg
Vdd
C1
10uF,50V
C2
11m m
18m m
68pF
5m m
RD 01MUS1
4.7kO HM
4m m
30m m
6.5m m
L1
4m m 5.5m m
13m m
R F-IN
17.5m m 25.5m m 4m m
RF-O UT
3m m
62pF
68O HM
3pF
24pF
62pF
10pF
240pF
L1: Enam eled wire 5Turns,D:0.43m m ,2.46m m O .D
Note:Board m aterial-glass epoxi substrate
C 1,C2: 1000pF,0.022uF in parallel
Micro strip line width=1.0m m /50O HM,er:4.8,t=0.6m m
INPUT/OUTPUT IMPEDANCE VS. FREQUENCY CHARACTERISTICS
520MHz Zin* Zout*
Zo=50Ω
Vdd=7.2V, Idq=100mA(Vgg adj.),Pin=0.03W
Zin* =3.11+j11.56
Zout*=11.64+j4.74
520MHz Zin*
520MHz Zout*
Zin*: Complex conjugate of input impedance
Zout*: Complex conjugate of input impedance
RD01MUS1
MITSUBISHI ELECTRIC
4/6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
RD01MUS1
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
Silicon MOSFET Power Transistor 520MHz,1W
RD01MSU1 S-PARAMETER DATA (@Vdd=7.2V, Id=100mA)
Freq.
[MHz]
100
150
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
S11
(mag)
0.927
0.875
0.833
0.811
0.798
0.791
0.790
0.788
0.794
0.796
0.798
0.801
0.807
0.813
0.817
0.825
0.831
0.837
0.845
0.851
0.857
0.862
(ang)
-77.0
-101.2
-117.9
-129.5
-138.0
-144.5
-149.7
-154.1
-158.0
-159.2
-161.2
-164.2
-167.0
-169.3
-171.6
-174.0
-176.0
-178.0
-179.9
178.2
176.5
174.7
S21
(mag)
(ang)
19.536
132.3
15.657
116.5
12.662
105.0
10.427
96.2
8.814
89.3
7.548
83.3
6.541
78.2
5.789
73.5
5.106
69.0
4.876
67.5
4.576
65.2
4.120
61.3
3.714
58.0
3.389
54.7
3.092
51.3
2.820
48.6
2.616
46.0
2.401
42.8
2.207
40.9
2.076
38.4
1.912
35.5
1.773
34.0
S12
(mag)
0.043
0.050
0.053
0.054
0.053
0.052
0.051
0.049
0.047
0.046
0.045
0.043
0.041
0.039
0.036
0.033
0.031
0.028
0.026
0.023
0.021
0.018
S22
(ang)
41.3
26.5
16.1
8.4
2.6
-2.4
-6.6
-9.9
-13.3
-14.1
-15.8
-18.5
-21.0
-22.3
-24.9
-25.7
-26.8
-27.8
-27.3
-27.0
-26.3
-23.8
(mag)
0.772
0.687
0.630
0.600
0.588
0.583
0.590
0.597
0.608
0.615
0.622
0.636
0.650
0.666
0.680
0.694
0.711
0.723
0.734
0.749
0.760
0.771
(ang)
-63.0
-83.1
-97.3
-107.1
-114.4
-120.1
-124.6
-128.4
-131.7
-133.1
-134.8
-137.3
-140.1
-142.4
-144.6
-146.8
-148.8
-150.9
-152.9
-154.5
-156.3
-158.2
RD01MSU1 S-PARAMETER DATA (@Vdd=12.5V, Id=100mA)
Freq.
[MHz]
100
150
200
250
300
350
400
450
500
520
550
600
650
700
750
800
850
900
950
1000
1050
1100
RD01MUS1
S11
(mag)
0.945
0.896
0.856
0.833
0.819
0.810
0.806
0.804
0.808
0.809
0.812
0.813
0.819
0.824
0.827
0.834
0.841
0.845
0.852
0.857
0.864
0.868
(ang)
-72.3
-96.7
-113.9
-126.2
-135.1
-141.9
-147.7
-152.2
-156.4
-157.8
-159.9
-163.0
-166.0
-168.6
-171.0
-173.3
-175.5
-177.4
-179.4
178.6
176.9
175.0
S21
(mag)
(ang)
19.517
135.2
15.937
119.5
13.050
107.7
10.830
98.6
9.194
91.6
7.890
85.3
6.868
80.1
6.084
75.3
5.382
70.7
5.139
69.1
4.831
66.7
4.356
62.7
3.931
59.3
3.597
56.0
3.283
52.4
2.991
49.8
2.779
47.1
2.554
43.8
2.350
41.9
2.209
39.4
2.035
36.3
1.889
34.8
S12
(mag)
0.039
0.046
0.049
0.050
0.050
0.049
0.047
0.046
0.044
0.044
0.042
0.040
0.038
0.036
0.034
0.031
0.029
0.026
0.024
0.022
0.019
0.017
MITSUBISHI ELECTRIC
5/6
S22
(ang)
44.5
29.2
18.5
11.2
5.0
-0.3
-4.2
-7.7
-11.0
-12.4
-13.7
-16.2
-18.7
-20.8
-22.3
-23.7
-24.6
-25.9
-25.4
-24.3
-23.5
-20.1
(mag)
0.742
0.665
0.612
0.581
0.568
0.565
0.571
0.580
0.591
0.596
0.605
0.618
0.633
0.649
0.664
0.678
0.695
0.708
0.720
0.736
0.747
0.759
(ang)
-57.4
-76.6
-90.6
-100.4
-107.8
-113.8
-118.5
-122.3
-126.1
-127.5
-129.4
-132.2
-135.1
-137.6
-140.1
-142.5
-144.5
-146.7
-148.9
-150.7
-152.4
-154.6
10 Jan 2006
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RoHS Compliance,
RD01MUS1
Silicon MOSFET Power Transistor 520MHz,1W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to
personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable
material or (iii) prevention against any malfunction or mishap.
warning !
Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme
short current flow between the drain and the source of the device. These results causes in fire or injury.
RD01MUS1
MITSUBISHI ELECTRIC
6/6
10 Jan 2006