Professor Manijeh Razeghi
Walter P. Murphy Professor and Director Center for Quantum Devices,
Department of Electrical Engineering and Computer Science, Northwestern University
Degrees:

 1980 Docteur d'etat es Sciences Physiques, Universite de Paris, France
 1977 Docteur 3eme Cycle, Solid State Physics, Universite de Paris, France
1976 DEA, Science des Materiaux, Universite de Paris, France
Academic and Industrial Experience:





1993-present Adjunct Professor, Optical Sciences Center, University of Arizona
1991-present Walter P. Murphy Professor of Electrical and Computer Engineering, and Director, Center for
Quantum Devices, Northwestern University, Evanston, IL
1986-1991 Head, Exploratory Materials Lab, Thomson-CSF, Orsay, France
1986 Visiting Professor, University of Michigan-Ann Arbor, MI
1981-1985 Senior Research Scientist, Thomson-CSF, Orsay, France
Awards and Honors:
















IBM Faculty Award - 2013
Elected Lifetime Fellow of Materials Rearch Society (MRS) - 2008
Elected Fellow of Institute of Electrical and Electronics Engineers (IEEE) - 2005
Elected Fellow of Institute of Physics (IOP) - 2005
Elected Fellow of American Physical Society (APS) - 2004
Elected Fellow of Optical Society of America (OSA) - 2004
R.F. Bunshah Award from Intal Conference on Metallurgical Coatings and Thin Films - 2004
Photonics West Optoelectronics 2004 Symposium Best Paper Award - 2004
Elected Fellow of Optical Society of America( OSA)-2003
Nominated for Northwestern University McCormick Teacher of the Year Award - 2003
Elected Fellow of International Engineering Consortium (IEC) - 2003
Elected Fellow of Society of Photo-Optical Instrumentation Engineers (SPIE)- 2000
Photonics West Optoelectronics 1998 Symposium Best Paper Award - 1998
Elected Fellow of Society of Women Engineers - 1995
Society of Women Engineers (SWE) Achievement Award - 1995
IBM Europe Science and Technology Prize - 1987
Technical Expertise, Areas of Interest and Accomplishments:


Dr. Razeghi is a pioneer in the area of III-V compound semiconductors and optoelectronic devices from the
deep ultraviolet to the far infrared spectral bands, including in particular InP and GaAs based
semiconductors and devices, which were at the heart of the optical fiber telecommunication revolution of
the late 20th Century and the rise of the information age.
From 1981 to 1991, while a Senior Research Scientist at first and then Head of the Exploratory Materials
Laboratory at Thomson-CSF (Orsay, France), Dr. Razeghi developed and implemented most major modern
epitaxial growth techniques such as low pressure metalorganic chemical vapor deposition (MOCVD),
vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), GasMBE, and MOMBE for entire
compositional ranges of III-V compound semiconductors and heterostructures. Developing these tools was







fundamental in enabling her to achieve high purity semiconductor crystals with a consistency and reliability
that was often unmatched, thereby leading to new physics phenomena in InP and GaAs based
semiconductors and quantum structures.
Her pioneering work on InP based compound semiconductors and devices is best illustrated in her book
"The MOCVD Challenge Volume 1: A Survey of GaInAsP-InP for Photonic and Electronic Applications"
(Adam Hilger Press, 1989), which details the realization of some of the first high quality InP, GaInAs/InP
and GaInAsP/InP materials, heterostructures and superlattices, on a variety of substrates, with the first
demonstration of two-dimensional electron gas and observation of quantum Hall effect, the first twodimensional hole gas, and the first observation of room temperature excitons in GaInAs/InP superlattices.
From a more device-oriented viewpoint, as impressive is the realization of 1.3 and 1.55 μm laser diodes for
optical fiber telecommunication laser sources, optical waveguides, the first InP based Gunn diode which
revolutionized radar systems, as well as then futuristic monolithic integration.
Equally comprehensive is her pioneering work on GaAs based semiconductors and devices which is
described in her second book "The MOCVD Challenge Volume 2: A Survey of GaInAsP-GaAs for
Photonic and Electronic Device Applications" (Institute of Physics Publishing, 1995). Some of her
impressive contributions include: the first high quality GaInP/GaAs and GaInAsP/GaAs interfaces,
heterostructures and superlattices, the first two-dimensional electron gas in this system, which led to the
first heterojunction field effect transistor or HFET, modulation-doped FET or MODFET, two-dimensional
electron gas FET or TEGFET in this system.
In 1991, even though many institutions had repeatedly tried to bring Dr. Razeghi to the United States to
join them, Northwestern University (NU) finally succeeded in convincing her to do so and qualified this as
one of the most important hires at NU of the past 20 years. There, she founded the Center for Quantum
Devices and concentrated her research activities on Quantum Mechanics and a wide range of Quantum
Devices, including lasers, photodetectors and focal plane arrays covering a very wide spectral band from
the deep ultraviolet (down to a wavelength of ~0.2 μm) to the very long wavelength infrared (~32 μm).
She has first successfully pioneered in the area of high power aluminum free diode lasers emitting at a
wavelength near 1 μm based on GaInAsP, which revolutionized the high power diode laser industry and
their applications in the early 1990's, including diode pumped solid-state lasers and erbium doped optical
fiber amplifiers for telecommunications. She is also the current world leader on Quantum Cascade Lasers
(QCLs) based on InP. Thanks to this work, such lasers are starting to supplant several other semiconductor,
solid state and gas laser technologies operating in the same waveband, thereby reshaping a portion of the
infrared laser industry with expected use for high accuracy chemical and biological agent sensing, free
space optical communications and pollution monitoring. Her other significant contributions in the field of
semiconductor diode lasers include her research work on InAsSb based multi quantum well and strained
layer superlattice interband lasers with very low threshold operating in the midwave infrared spectral band.
Dr. Razeghi's expertise extends to photodetectors and focal plane arrays operating in the mid, long and very
long wavelength infrared spectral bands (3~32 μm). In particular, she has pioneered and is a world leader in
the area of InAs/GaSb type II quantum heterostructures, photodetectors and focal plane arrays. Thanks to
her work on this topic, this technology is beginning to reshape the infrared sensing industry and possibly
leading to a technological revolution, with a direct impact on applications such as medical and
manufacturing thermal imaging, firefighting, pollution monitoring, surveillance, law enforcement and
many others. She also realized some of the first and only Quantum Dot Infrared Photodetectors (QDIPs)
and focal plane arrays on GaAs and InP. In parallel, she has pioneered in the research on a wide range of
Quantum Well Infrared Photodetectors (QWIPs) on InP for mid, long and very long wavelength spectral
bands (4-19 μm) and demonstrated the first multi spectral QWIP on InP.
Her research has also led to the successful realization of infrared detectors using very exploratory thallium
and bismuth based semiconductor compounds such as InTlSb, InSbBi and InTlAsSb, that of uncooled
InAsSb photon detectors, and of InSb focal plane arrays.
Finally, Dr. Razeghi is also an expert in quantum devices operating in the deep ultraviolet spectral band,
with the demonstration of novel light-emitting diodes, photodetectors and focal plane arrays with world
record characteristics. Such devices are expected to be at the heart of next generation fast and reliable
chemical and biological agent sensors, portable water purification systems, flame sensors, furnace
monitoring, ozone pollution monitors, space UV astronomy, and many other applications.

Based on her scientific research work, Dr. Razeghi is the author of 16 books and the author of 27 book
chapters. She is the author or co-author of more than 1000 papers and gave more than 500 invited and
plenary talks. She holds 55 patents.
Academic Service:



Created the Graduate and Undergraduate Programs in Solid State Engineering (SSE) in the ECE
Department at Northwestern University, a 12 course curriculum.
Supervised 45PhD dissertations, 16 MS theses while at Northwestern.
Currently supervises approximately 20 PhD students, Post-Docs, Visiting Researchers, and Faculty.
Institutional and Professional Service:















Chair and organizing committee of many international conferences
Editorial Board, Applied Physics A, Springer-Verlag
Editorial Board, Current Nanoscience, Bentham Science Publishers
Editorial Board, Journal of Nanoscience and Nanotechnology, American Scientific Publishers
Editorial Board, Journal of Nanotechnology, Institute of Physics Publishers
Editorial Board, Journal of Optoelectronics
Editorial Board, Journal of Science, Technology, and Application of Integrated Optics, Kluwer Academic
Publishers
Editorial Board, Microelectronics Journal
Associate Editor, Opto-Electronics Review, Polish Opto-Electronics Committee
International Editorial Advisory Board, Opto-Electronics Review, Polish Opto-Electronics Committee
International Editorial Advisory Board, The Bulletin PAS (Polish Academy of Sciences)
International Advisory Board on Semiconductors, Polish Committee of Science
United Nations Expert to Telebras, Brazil
International Advisory Board for Sorbonne Paris Cite
Panel Chair for the European Research Council's (ERC's) Condensed matter physics program
Professional Society Associations:











American Association for the Advancement of Science (AAAS)
American Physical Society (APS)
Electrochemical Society
French Academy of Sciences and Technology
Fellow of International Engineering Consortium (IEC)
Fellow of Institute of Electrical and Electronics Engineers (IEEE)
Fellow of Institute of Physics (IOP)
Lifetime Fellow Materials Research Society (MRS)
Fellow of Optical Society of America (OSA)
Fellow of Society of Photo-Optical Instrumentation Engineers (SPIE)
Fellow and Life Member of Society of Women Engineers (SWE)
Awarded Patents
1.
2.
3.
4.
5.
InAs/GaSb infrared superlattice photodiodes doped with Beryllium, US patent number 7638791,
Granted December 29, 2009
Focal Plane Arrays in Type-II Superlattices, US patent number 7001794, Granted February 21, 2006
Focal Plane Arrays in Type-II Superlattices, US patent number 6864552, Granted March 8, 2005
Multi Color Detector, US patent number 6750075, Granted June 15, 2004
III-Nitride Optoelectronic Devices, US patent number 6605485, Granted August 12, 2003
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
26.
27.
28.
29.
30.
31.
32.
High Power IR Semiconductor Laser, US patent number 6577659, Granted June 10, 2003
III-V Semiconductors Separate Confinement Superlattice Optoelectronic Devices, US patent number
6570179, Granted May 27, 2003
Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs), US patent number 6480520,
Granted November 12, 2002
Aluminum-Free Vertical Cavity Surface Emitting Lasers (VCSELs), US patent number 6480520,
Granted November 12, 2002
Diode Laser, US patent number 6461884, Granted October 8, 2002
Multi Quantum Well Grinsch Detector, US patent number 6459096, Granted October 1, 2002
Multi Color Detector, US patent number 6452242, Granted September 17, 2002
Multi-Spectral Quantum Well Infrared Photodetectors, US patent number 6420728, Granted July 16,
2002
Quantum Dots for Optoelectronic Devices, US patent number 6329668, Granted December 11, 2001
Fabrication of Defect Free III-Nitride Materials, US patent number 6271104, Granted August 7, 2001
Long Wavelength DH, SCH, and MQW Lasers Based on Sb, US patent number 6108360,
Granted August 22, 2000
Long Wavelength Infrared Photodetectors/ Growth, Characterization and Fabrication of InSbBi
Long Wavelength Infrared Photodetectors, US patent number 6054706, GrantedApril 15, 2000
III-Nitride Based Emitting Devices, US patent number 5834331, Granted November 10, 1998
Method for Making III-Nitride Laser and Detection Device / III-Nitride Based Detectors, US patent
number 5834331, Granted November 10, 1998
III-Nitride Superlattice Structures / The Method of Increasing Acceptor Level and Decreasing
Contact Resistance III-Nitride Photonic and Opto-electronic Devices, US patent number 5831277,
Granted November 3, 1998
Processing of Sb-based Lasers, US patent number 5807765, Granted September 15, 1998
Buried-Ridge Laser Device / Emitting at 0.78 μm up to 10 μm, US patent number 5726078,
Granted March 10, 1998
Composition for InSb and GaAs Thin Film on Silicon Substrate for Use in Photodetectors and
Method for Making InSb p-i-n Photodetector on Si Substrate Using InSb Doped 5 x 10 Buffer Layer
in Order to Decrease Dark Current of PD, US patent number 5668395, Granted September 16, 1997
Buried-Ridge Laser Device, US patent number 5663976, Granted September 2, 1997
InAsSb/InAsSbP Diode Lasers / High Power Sb-based Laser Diodes, US patent number 5658825,
Granted August 19, 1997
Multiple Stacked Sb-based Heterostructures / Method of Increasing of Resistance and Voltage
Sensitivity of a Photovoltaic Devices, US patent number 5650635, Granted July 22, 1997
Method of Growing III-V Semiconductor Films Using a Coated Reaction Chamber, US patent number
5599732, Granted February 4, 1997
Semiconductor Films, US patent number 5462008, Granted October 31, 1995
Intermetallic Compound Semiconductor Thin Film and Method of Manufacturing Same, US patent
number 5421910, Granted June 6, 1995
New Semiconductor Materials for (FIR) Far Infrared Photodetector and Laser Emitting Between 2
μm up to 9 μm, US patent number 5410178, Granted April 25, 1995
Aluminum Free 650 nm to 1100 nm High Power Lasers grown on GaAs, InP and Si Substrates, US
patent number 5389396, Granted February 14, 1995
LW-SCAW-LD Large Waveguide Separate Confinement Quantum Well Laser Diodes for High
Power Laser, US patent number 5384151, Granted January 24, 1995
Pending Patents
1.
2.
3.
4.
5.
Aluminum-free 980 nm Laser Pump
Fabrication of Type II InAs/GaSb Superlattice Focal Plane Arrays
High Power Mid Wavelength Infrared Laser
Ohmic Contacts for Semiconductor Devices
1.35 μm GaInAsP/InP Laser on Silicon Substrate Grown by Low Pressure MOCVD
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
Thermal Stability of GaN Thin Films Grown by MOCVD on (0001) Si 6H-SiC and (0112) Sapphire
Substrates
Comparison of the Physical Properties of GaN Thin Films Deposited on (0001) and (0112) Sapphire
Substrates
SLOW (Semiconductor Laser Organic Waveguide) Device for Generating Blue Light (with Dr.
Tobin Marks, NU Chemistry)
Wavelength Engineering of the InTlSb-InSb Photoconductor Under Annealing in H2-N2
Atmosphere
Aluminum Free GaInAsP Quantum Well Intersubband Photodetectors
Technology of Heatsink for GaAs-GaInAsP-GaInP High Power Lasers
Technology of GaInAsP-GaInP-GaAs High Power Laser Emitting at 808 nm
Selective Epitaxy for Quantum Devices
Al-free Sb-based Lasers Emitting at 2-5 μm at Room Temperature
InSbBi Materials for Far-infrared Detectors and Focal Plane Arrays
Semiconductor Substrate Preparation for Epitaxial Growth of Optoelectronic Devices
Technology of Far Infrared Lasers - Room Temperature Al-free DH and SCH Lasers
Quantum Dots Infrared Photodetector Material and Structure
Oxide-confined aluminum-free vertical cavity surface emitting lasers (VCSELs)
InAsSb Two-Color Detector Technology
High Power Infrared Lasers
High Power Infrared Semiconductor Laser
Heterogeneous Integration of Optoelectronic Devices
Dry Etching Method of Sb-based Compound Semiconductor for Optoelectronic Devices
Ohmic Contact to P-AlGaN for Optoelectronic and Electronic Devices
Books
1. The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications
Manijeh Razeghi, Leo Esaki, Klaus von Klitzing
SPIE, published 2013
When you look closely, Nature is nanotechnology at its finest. From a single cell, a factory
all by itself, to complex systems, such as the nervous system or the human eye, each is
composed of specialized nanostructures that exist to perform a specific function. This same
beauty can be mirrored when we interact with the tiny physical world that is the realm of
quantum mechanics. The Wonder of Nanotechnology: Quantum Optoelectronic Devices
and Applications, edited by Manijeh Razeghi, Leo Esaki, and Klaus von Klitzing focuses
on the application of nanotechnology to modern semiconductor optoelectronic devices.
Electrons, photons, and even thermal properties can all be engineered at the nanolevel. The
2D quantum well, possibly the simplest aspect of nanotechnology, has dramatically
enhanced the efficiency and versatility of electronic and optoelectronic devices. While this
area alone is fascinating, nanotechnology has now progressed to 1D (quantum wire) and 0D
(quantum dot) systems that exhibit remarkable and sometimes unexpected behaviors. With
these components serving as the modern engineer's building blocks, it is a brave new world
we live in, with endless possibilities for new technology and scientific discovery.
[http://spie.org/x648.xml?product_id=2022876]
2. Antimony: Characteristics, Compounds and Applications
Manijeh Razeghi
Nove: Material Science and Technology, published 2012
his book is a collection of diverse research activities on antimony where 12 groups of
prominent authors from different part of the worlds presented their latest achievement on
antimony-related materials. In the past, despite being widely known and utilized by many
countries and cultures, antimony's status as an alchemical substance and its high toxicity
have obscured understanding of the material, resulting in controversial usage of antimony,
especially in medicine. Today, knowledge about antimony compounds has tremendously
increased, and the application range of antimony has become much wider. Due to the
diversity of the applications of antimony, researchers may stay focused on their own field
while lacking familiarity with antimony-related activities in other fields.
[https://www.novapublishers.com/catalog/product_info.php?products_id=29197]
3. MIOMD-XI Infrared Optoelectronics: Materials and Devices
Manijeh Razeghi, Leo Esaki, Klaus von Klitzing
Self-Published, published 2012
The 11th international conference on Infrared Optoelectronics: Materials and Devices
(MIOMD‐XI) at Northwestern University in Evanston, Illinois assembles the world’s top
scientists, engineers and end‐users who are advancing the latest developments in infrared
optoelectronics. A wealth of critical modern applications rely on new developments in
optoelectronics for medical imaging, industrial failure analysis, target acquisition and
tracking, thermal imaging, standoff chemical‐specific imaging, LIDAR, and free‐space
communication. This conference will explore new topics of research and address the rising
challenges facing infrared emission, detection, and systems development. This year’s
highly selective program consists of a daily plenary session, invited talks, and late breaking
results. The speakers are international leaders in the field who will present the state‐of‐the‐
art in infrared devices, materials, sensors, and emitters. The newest cutting‐edge
developments are highlighted as late breaking results, with the conference designed to give
maximum extended exposure for in‐depth discussion. All late breaking results are
introduced first with a short oral presentation in the general session, and thereafter the work
is exhibited as a poster for discussion in the grand hall overlooking Lake Michigan where
coffee breaks and lunch will take place. Three MIOMD‐XI Best Paper Awards will be
presented each day to the three best‐voted late breaking results.
[http://miomd11.northwestern.edu/files/files/Booklet/Proceedings%20Volume%20(As%20Printed).pdf]
4. Technology of Quantum Devices
M. Razeghi
Springer Science, published 2010
Technology of Quantum Devices covers a wide range of topics in solid state physics,
presenting an overview of areas like photonics, semiconductors and crystals. The book
presents the most up-to-date developments in semiconductor physics and nano-engineering,
with a particular focus on specific areas like compound semiconductors, crystal growth
techniques and silicon and compound semiconductor device technology. The book uses a
thorough set of sample problems, including the use of clear and detailed mathematical
derivations in order to present clear, concise explanations for readers. Other important areas
covered include semiconductor lasers, quantum tunneling transport, quantum well
intersubband photodetectors and quantum dot photodetectors.
[http://www.amazon.com/Technology-Quantum-Devices-ManijehRazeghi/dp/1441910557/]
5. The MOCVD Challenge: A survey of GaInAsP-InP and GaInAsP-GaAs for photonic
and electronic device applications, Second Edition
M. Razeghi
Taylor and Francis/CRC Press, published 2010
MOCVD is a widely used technique in research and industry. The quantum-semiconductor
structures grown by MOCVD will continue to be increasingly integrated into the exciting
world of organic materials and biomaterials. Written by a leader in the field, this volume
provides complete coverage of the MOCVD challenge. It presents a state-of-the art review
of methods for producing ultra thin, accurately controlled epitaxial layers of semiconductor
multilayers and microstructures deposited over a large range of substrates. The book also
focuses on photonic and electronic device applications of GalnAsP-GaAs.
[http://www.amazon.com/gp/product/1439806985/]
6. VLSI Micro- and Nanophotonics: Science, technology, and Applications
Ed. El-Hang Lee, Louay A. Eldada, Manijeh Razeghi, and Chennupati Jagadish
CRC Press, Taylor and Francis, published 2010
There is a significant difference between VLSI (very large scale integration)
micro/nanoelectronics and VLSI micro/nanophotonics. This book is about the latter, which
is meant to define photonic devices, circuits and subsystems in small sizes reaching down
in scale to micron, submicron, nano-scale, and quantum-scale dimensions. This book
examines issues concerning three essential steps in this technology: miniaturization,
interconnection, and integration of microphotonic devices, circuits and systems in micron
or submicron scale. It highlights the technology’s advantages with respect to size as well as
its ability to offer new and unexplored functions toward new applications.
[http://www.amazon.com/VLSI-Micro-Nanophotonics-TechnologyApplications/dp/1574447297]
7. Fundamentals of Solid State Engineering, Third Edition
Manijeh Razeghi
Springer Science, published 2009
Fundamentals of Solid State Engineering, 3rd Edition, provides a multi-disciplinary
introduction to solid state engineering, combining concepts from physics, chemistry,
electrical engineering, materials science, and mechanical engineering. Revised throughout,
this third edition includes new topics such as electron-electron and electron-phonon
interactions, in addition to the Kane effective mass method. A chapter devoted to quantum
mechanics has been expanded to cover topics such as the harmonic oscillator, the hydrogen
atom, the quantum mechanical description of angular momentum and the origin of spin.
This textbook also features an improved transport theory description, which now goes
beyond Drude theory, discussing the Boltzmann approach. Introducing students to the
rigorous quantum mechanical way of thinking about and formulating transport processes,
this textbook presents the basic physics concepts and thorough treatment of semiconductor
characterization technology, designed for solid state engineers.
[http://www.amazon.com/dp/0387921672/]
8. Biosensing: Proceedings of SPIE, Volume 7035
M. Razeghi and H. Mohseni, editors
Society of Photo-Optical Instrumentation Engineers (SPIE), published 2008
The papers included in this volume were part of the technical conference, SPIE Optics and
Photonics Symposium, August 12-14, 2008 in San Diego, CA. Papers were selected and
subject to review by the editors and conference program committee. Some conference
presentations may not be available for publication. The papers published in these
proceedings reflect the work and thoughts of the authors and are published herein as
submitted. The publisher is not responsible for the validity of the information or for any
outcomes resulting from reliance there on.
[http://spie.org/x648.xml?product_id=780591&origin_id=x4318&event_id=840121]
9. Fundamentals of Solid State Engineering, Second Edition
Manijeh Razeghi
Springer, published 2006
Fundamentals of Solid State Engineering, 2nd Edition, provides a multi-disciplinary
introduction to Solid State Engineering, combining concepts from physics, chemistry,
electrical engineering, materials science and mechanical engineering. Basic physics
concepts are introduced, followed by a thorough treatment of the technology for solid state
engineering. Topics include compound semiconductor bulk and epitaxial thin films growth
techniques, current semiconductor device processing and nano-fabrication technologies.
Examples of semiconductor devices and a description of their theory of operation are then
discussed, including transistors, semiconductor lasers and photodetectors. Revised
throughout, this second edition includes new chapters on the reciprocal lattice, optical
properties of semiconductors, semiconductor heterostructures, semiconductor
characterization techniques, and an introduction to lasers. Additions and improvements
have been made to the material on photodetectors and quantum mechanics as well as to the
problem sections.
[http://www.amazon.com/exec/obidos/ASIN/0387281525/102-3225544-1966505]
10. III-Nitride Optoelectronic Devices
edited M. Henini and M. Razeghi
Elsevier Science Publishers, published 2004
Tremendous progress has been made in the last few years in the growth, doping and
processing technologies of the wide bandgap semiconductors. As a result, this class of
materials now holds significant promise for semiconductor electronics in a broad range of
applications. The principal driver for the current revival of interest in III-V Nitrides is their
potential use in high power, high temperature, high frequency and optical devices resistant
to radiation damage. This book provides a wide number of optoelectronic applications of
III-V nitrides and covers the entire process from growth to devices and applications making
it essential reading for those working in the semiconductors or microelectronics.
[http://www.amazon.com/exec/obidos/ASIN/0080444261/102-1383064-9721744]
11. Fundamentals of Solid State Engineering
M. Razeghi
Kluwer Academic Publishers, published 2002
Fundamentals of Solid State Engineering is structured in two major parts. It first addresses
the basic physics concepts, which are at the base of solid state matter in general and
semiconductors in particular. The second part reviews the technology for modern Solid
State Engineering. This includes a review of compound semiconductor bulk and epitaxial
thin films growth techniques, followed by a description of current semiconductor device
processing and nano-fabrication technologies. A few examples of semiconductor devices
and a description of their theory of operational are then discussed, including transistors,
semiconductor lasers, and photodetectors.
[http://www.amazon.com/exec/obidos/ASIN/0792376293/102-7555673-7707346]
12. Proceedings of the International Conference on Materials for Advanced Technologies
(ICMAT)
M. Razeghi (Guest Editor)
Elsevier Sciences Publishers, published 2002
Proceedings of the International Conference on Materials for Advanced Technologies
(ICMAT), Singapore, July 1-6, 2001, special issue of the journal Materials Science in
Semiconductor Processing
13. Handbook of Infrared Detection Technologies
edited M. Henini and M. Razeghi (Series Editor, G. Smaldon)
Elsevier Science Publishers, published 2002
The use of lasers which emit infra-red radiation and sophisticated detectors of IR radiation
is increasing dramatically: they are being used for long-distance fiber-optic
communications and remote environmental monitoring and sensing. Thus they are of
interest to the telecommunications industry and the military in particular. This book has
been designed to bring together what is known on these devices, using an international
group of contributors.
[http://www.amazon.com/exec/obidos/ASIN/1856173887/102-7555673-7707346]
14. Long Wavelength Infrared Detectors
M. Razeghi, Editor
Gordon and Breach Publishers, Inc., published 1996
This series focuses on electro-optical applications of advance semiconductors such as
quantum wells and superlattices. Volume 1 is dedicated to the long wavelength infrared
detectors based on III-V Semiconductor quantum wells and superlattices as a new
generation for infrared detectors based on artificially synthesized quantum structures. The
chapters are contributed by the leading researchers at some of the best industrial, academic
and government laboratories in the world. Although written primarily as a reference work,
this book is appropriate as a supplementary text for graduate courses in this area.
[http://www.amazon.com/exec/obidos/ASIN/2884492089/102-7555673-7707346]
15. The MOCVD Challenge Volume II: A survey of GaAs and related compounds and of
GaInP for photonic and electronic applications
M. Razeghi
Institute of Physics Publishing, published 1995
This second volume focuses on MOCVD growth of GaAs and related alloys and GaInP for
photonic and electronic applications. Coverage begins with III-V compounds and devices
and growth techniques for multilayers and heterostructures. The book then details how an
MOCVD system works and how design affects material growth and sourcing of precursor
materials. It also examines in- and ex-situ growth techniques and the GaInPGaAs system,
including optical investigations of quantum wells and superlattices. The book concludes
with a discussion of the current use, novel developments, and future potential for optical
devices, GaAs-based lasers and heterojunctions, and optoelectronic integrated circuits.
[http://www.amazon.com/exec/obidos/ASIN/0750303093/102-7555673-7707346]
16. Integrated Optics and Optoelectronics, Vol. CR45
K.K. Wong and M. Razeghi, eds.
SPIE Optical Engineering Press, published 1993
Proceedings of a Conference held January 21-23, 1993 in Los Angeles, CA
[http://www.amazon.com/exec/obidos/ASIN/0819410055/102-7555673-7707346]
17. Optoelectronic Materials and Device Concepts
M. Razeghi, ed.
SPIE Optical Engineering Press, published 1991
The plenary paper in this book were delivered at SPIE'a International Conference on
Physical Concepts of Materials for Novel Optoelectronics Device Applications. The invited
and contributed paper form the conference are collected in SPIE Vol. 1361, which focuses
on materials, growth, and Characterization, and Volt 1362, which focuses on device physics
and applications.
[http://www.amazon.com/exec/obidos/ASIN/0819405302/102-7555673-7707346]
18. The MOCVD Challenge Volume 1: A survey of GaInAsP-InP for photonic and
electronic applications
M. Razeghi
Adam Hilger Press, published 1989
The MOCVD Challenge describes how to use MOCVD to grow materials and devices, in
particular indium phosphide, gallium indium arsenide and gallium indium arseno
phosphide. It contains detailed descriptions of reactors, starting materials and growth
conditions. It discusses lattice-matched materials, strained layers and growth on nonmatched substrates such as silicon. It includes results which include the growth,
characterization, application of heterojunctions, quantum wells and superlattices based on
these compounds. It concludes with applications for indium phosphide semiconductors such
as lasers and photodetectors and for electronic components such as optical fibres and
satellite communication systems. Together with The MOCVD Challenge: Volume 2 it
forms a valuable reference for users of MOCVD, and those evaluating MOCVD for use in
their research. Written for physicists, materials scientists, electronics and electrical
engineers involved in semiconducting materials and as-grown device research.
[http://www.amazon.com/exec/obidos/ASIN/0852741618/102-7555673-7707346]
Book Chapters
1.
2.
"Quantum Dots"Stanley Tsao and Manijeh Razeghi - Chapter 6 (p. 169-219) in Photonics Volume 2:
Nanophotonic Structures and Materials, David L. Andrews, John Wiley & Sons, Inc., published 2015
"Recent Advances in IR Laser Diodes with High Power, High WPE, Single Mode, CW Operation at
RT"Manijeh Razeghi , Neelanjan Bandyopadhyay , Quanyong Lu , Yanbo Bai , Steven Slivken , and
David Heydari - Chapter 17, (p. 123-128) in Terahetz and Mid Infrared Radiation: Detection of
Explosives and CBRN (Using Terahertz), Mauro F. Pereira and Oleksiy Shulika, NATO Science for
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
Peace and Security Series-B Physics and Biophysics (Springer), published
2014[http://www.amazon.com/Terahertz-Mid-Infrared-Radiation-Explosives/dp/940178583X]
"High Power, Narrow-Linewidth, and Compact Terahertz Sources for Room Temperature
Applications"Manijeh Razeghi, Quanyong Lu, Neelanjan Bandyopadhyay, Steven Slivken, and Yanbo
Bai - Chapter 4 (p. 75-89) in THz and Security Applications: Detectors, Sources and Associated
Electronics for THz Applications, Carlo Corsi and Fedir Sizov, NATO Science for Peace and Security
Series-B Physics and Biophysics (Springer), published 2014[http://www.amazon.com/THz-SecurityApplications-AssociatedElectronics/dp/9401788308/ref=sr_1_11?s=books&ie=UTF8&qid=1401371029&sr=111&keywords=NATO+Science+for+Peace+and+Security+Series+B%3A+Physics+and+Biophysics]
"Type II Antimonide-Based Superlattices: A One-Dimensional Bulk Semiconductor"Manijeh Razeghi
and Binh-Minh Nguyen - Chapter 19 in One-Dimensional Nanostructures: Principles and
Applications, Tianyou Zhai and Jiannian Yao, John Wiley & Sons, Inc., Hoboken, NJ, USA., published
2013[http://dx.doi.org/10.1002/9781118310342.ch19]
"Type-II Antimonide-based Superlattice Photon Detectors and Focal Plane Arrays"M. Razeghi and
B.M. Nguyen - Chapter 5, (p. 93-124) in Antimony: Characteristics, Compounds and Applications,
edited by M. Razeghi, November Science Publishers, Inc., published
2012[https://www.novapublishers.com/catalog/product_info.php?products_id=29197]
"III-Nitrides-Based Biosensing"M. Razeghi and R. McClintock - Chapter 28, (p. 609-632)
in Integreated Microsystems: Electronics, Photonics, and Biotechnology, edited by K. Iniewski, CRC
Press, published 2011[http://www.crcpress.com/product/isbn/9781439836200]
"The Infrared Physics of Quantum Dots"M. Razeghi and B. Movaghar - Chapter 12 (p. 12-1 to 1225) in VLSI Micro- and Nanophotonics: Science, Technology, and Applications, El-Hang Lee, Louay
Eldada, Manijeh Razeghi, and Chennupati Jagadish, Taylor & Francis Group LLC, published
2010[http://www.crcpress.com/product/isbn/9781574447293]
"Type II InAs/GaSb Superlattice Photon Detectors and Focal Plane Arrays"M. Razeghi, B-M
Nguyen, and P-Y Delaunay - Chapter 24 (p. 24-1 to 24-32) in VLSI Micro- and Nanophotonics:
Science, Technology, and Applications , El-Hang Lee, Louay Eldada, Manijeh Razeghi, and Chennupati
Jagadish, Taylor & Francis Group, LLC, published
2010[http://www.crcpress.com/product/isbn/9781574447293]
"III-Nitride Nanotechnology"M. Razeghi and R. McClintock - Chapter 13 (p. 13-1 to 13-18) in VLSI
Micro- and Nanophotonics: Science, Technology, and Applications , El-Hang Lee, Louay Eldada,
Manijeh Razeghi, and Chennupati Jagadish, Taylor & Francis Group, LLC, published
2010[http://www.crcpress.com/product/isbn/9781574447293]
"Quantum Dot Infrared Photodetectors by Metal-Organic Chemical Vapor Deposition"M. Razeghi,
W. Zhang, H. Lim, and S. Tsao - Chapter 21, p. 620-658 in Handbook of Self Assembled
Semiconductor Nanostructures Novel Devices in Photonics and Electronics, M. Henini, Elsevier
Limited, published 2008[http://www.elsevier.com/wps/product/cws_home/714710]
"High-Power High Temperature Semiconductor Lasers for lambda ~ 9.6 micron"M. Razeghi - p.
103-111 in Semiconductor Science and Technology, Volume 1: Frontiers in Science and Technology,
edited by V. Stefan and N.G. Basov, Stefan University Press, published
2006[http://www.amazon.com/Semiconductor-Science-Technology-University-Frontiers/dp/1889545112]
"Atomic Engineering in Type-II InAs/GaSb for Multicolor Infrared Camera"Y. Wei, A. Gin and M.
Razeghi - Chapter 11 (p. 447-495) in Handbook of Semiconductor Nanostructures and Nanodevices,
edited K.L. Wand and A.A. Balandin, American Scientific Publishers, published
2005[http://www.amazon.com/Handbook-Semiconductor-Nanostructures-NanodevicesNanotechnology/dp/158883073X]
"Quantum Photovoltaic Devices Based on Antimony Compound Semiconductors"Y. Wei, A. Gin and
M. Razeghi - p. 515-545 in Mid-Infrared Optoelectronics, edited A. Krier, Springer-Verlag London
Publishers, published 2005[http://www.springerlink.com/content/a3838727j5337760/]
"Antimony Based Materials for Electro-Optics"W. Zhang and M. Razeghi - Chapter 7 (p. 229-288)
in Semiconductor Nanostructures for Optoelectronic Applications, edited T. Steiner, published
2004[http://www.amazon.com/Semiconductor-Nanostructures-Optoelectronic-ApplicationsMaterials/dp/1580537510]
"Review of Crystal, Thin Film and Nanostructure Growth Technologies"A. Yasan and M. Razeghi Chapter 2 (p. 5-43) in Semiconductor Nanostructures for Optoelectronic Applications, edited T.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
26.
27.
28.
29.
30.
31.
Steiner, published 2004[http://www.amazon.com/Semiconductor-Nanostructures-OptoelectronicApplications-Materials/dp/1580537510]
"III-Nitride UV Photodetectors"R. McClintock and M. Razeghi - Chapter 10 (p. 251-284) in IIINitride Optoelectronic Devices, edited M. Henini and M. Razeghi, Elsevier Ltd. Publishers, published
2004[http://www.amazon.com/exec/obidos/ASIN/0080444261/102-1383064-9721744]
"III-Nitride Ultraviolet Light Emitting Sources"A. Yasan and M. Razeghi - Chapter 9 (p.213-249)
in III-Nitride Optoelectronic Devices, edited M. Henini and M. Razeghi, Elsevier Ltd. Publishers,
published 2004[http://www.amazon.com/exec/obidos/ASIN/0080444261/102-1383064-9721744]
"Introduction"M. Razeghi and M. Henini - Chapter 1 (p. 1-8) in III-Nitride Optoelectronic Devices,
edited M. Razeghi and M. Henini, Elsevier Ltd. Publishers, published
2004[http://www.amazon.com/exec/obidos/ASIN/0080444261/102-1383064-9721744]
"Preface"M. Razeghi and M. Henini - (p. v - vi) in III-Nitride Optoelectronic Devices, edited M.
Razeghi and M. Henini, Elsevier Ltd. Publishers, published
2004[http://www.amazon.com/exec/obidos/ASIN/0080444261/102-1383064-9721744]
"Infrared Detectors Based on InAs/GaSb Superlattices"M. Razeghi, Y. Wei, and G.J. Brown - (p.
263-272) in Future Trends in Microelectronics: The Nano Millennium, A. Zaslavsky, Editor, Wiley
Publishing, published 2002[http://www.wiley.com/WileyCDA/WileyTitle/productCd-0471212474.html]
"GaInAs(P) Based QWIPs on GaAs, InP, and Si Substrates for Focal Plane Arrays"Chapter 4 (p.
122-158) in Handbook of Infrared Detection Technologies, edited M. Henini and M. Razeghi (Series
Editor, G. Smaldon), Elsevier Science Publishers, published 2002[http://www.amazon.com/HandbookInfra-red-Detection-Technologies-Henini/dp/1856173887]
"GaSb/InAs Superlattices for Infra Red FPAs"Chapter 6 (p. 191-232) in Handbook of Infrared
Detection Technologies, edited M. Henini and M. Razeghi (Series Editor, G. Smaldon), Elsevier Science
Publishers, published 2002[http://www.amazon.com/Handbook-Infra-red-Detection-TechnologiesHenini/dp/1856173887]
"Advances in Quantum Dot Structures"S. Kim and M. Razeghi - chapter 5 (p. 199-213)
in Semiconductor and Semimetals (73), Semiconductor and Semimetals (73), Academic Press, published
2001[http://www.amazon.com/Semiconductors-Semimetals-73-Vol-37/dp/0127521828]
"Recent Advances in Quantum Dot Optoelectronic Devices and Future Trends"S. Kim and M.
Razeghi - Chapter 3 (p. 133-153) in Handbook of Advanced Electronic and Photonic Materials and
Devices - Volume 2: Semiconductor Devices, H.S. Nalwa, Editor, Academic Press Publishers, published
2000[http://www.amazon.com/Handbook-Advanced-Electronic-Photonic-Materials/dp/0125137451]
"Photoresistors"M. Razeghi and A. Rogalski - p. 377-387 in Encyclopedia of Electrical and
Electronics Engineering, John G. Webster, Editor, John Wiley and Sons, Inc., published
2000[http://www.amazon.com/Wiley-Encyclopedia-Electrical-Electronics-Engineering/dp/0471139467]
"21st Century: The Final Frontier for III-Nitrides Materials and Devices"M. Razeghi - chapter (p.
381-395) in Future Trends in Microelectronics: The Road Ahead, S. Luryi, J. Xu and A. Zaslavsky,
Editors, John Wiley and Sons, Inc., published 1999[http://www.amazon.com/Future-TrendsMicroelectronics-Road-Ahead/dp/0471321834]
"GaN Based Laser Diodes"chapter (p. 1007-1080) in International Journal of High Speed Electronics
and Systems, (Vol. 9, No. 4), Michael Stroscio and Mitra Dutta, Editors, World Scientific Publishers, Inc.,
published 1998[http://dx.doi.org/10.1142/S0129156498000415]
"Novel InTlSb Infrared Detectors"chapter 8 in Long Wavelength Infrared Detectors, M. Razeghi,
Editor, Gordon and Breach Publishers, Inc., published 1996[http://www.amazon.com/WavelengthOptoelectronic-Properties-Semiconductors-Superlattices/dp/2884492097 ]
"Growth and Characterization of GaInP/GaAs System for Quantum Well Infrared Photodetector
Applications"chapter 2 in Long Wavelength Infrared Detectors, M. Razeghi, Editor, Gordon and
Breach Publishers, Inc., published 1996[http://www.amazon.com/Wavelength-Optoelectronic-PropertiesSemiconductors-Superlattices/dp/2884492097 ]
"Chemical Vapor Deposition of Semiconductor Materials"(p. 517-531) in ASM Handbook, Volume 5,
Surface Engineering, ASM International, Materials Park, OH, published
1994[http://www.amazon.com/ASM-Handbook-Surface-Engineering-Asm/dp/087170384X/]
"MOCVD Technology and its Applications"chapter 3, (p. 183-274) in Handbook on Semiconductors,
Second Edition, Volume 3A: Materials, Properties and Preparations, S.. Mahajan, Volume Editor,
Elsevier Science Publishers, published 1994[http://www.amazon.com/Handbook-SemiconductorsMaterials-Properties-Preparation/dp/0444852743/]
Journal Publications
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
A. Haddadi, X.V. Suo, S. Adhikary, P. Dianat, R. Chevallier, A.M. Hoang, and M. Razeghi, "Highperformance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1xSbx superlattices," Applied Physics Letters 107 141104 (2015) (October 5,
2015) [http://dx.doi.org/10.1063/1.4932518].
N. Bandyopadhyay, M. Chen, S. Sengupta, S. Slivken, and M. Razeghi, "Ultra-broadband quantum
cascade laser, tunable over 760 cm−1, with balanced gain," Opt. Express 2321159-21164 (August 10,
2015) [http://dx.doi.org/10.1364/OE.23.021159].
Manijeh Razeghi, Abbas Haddadi, Guanxi Chen, Romain Chevallier and Ahn Minh Hoang, "InAs/InAs1XSbx Type-II Superlattices for High-Performance Long-Wavelength Infrared Medical
Thermography," ECS Trans. 2015 66(7): 109-116 (June 1,
2015) [http://dx.doi.org/10.1149/06607.0109ecst].
D.J. Rogers, V.E. Sandana, S. Gautier, T. Moudakir, M. Abid, A. Ougazzaden, F. Hosseini Teherani, P.
Bove, M. Molinari, M. Troyon, M. Peres, Manuel J. Soares, A.J. Neves, T. Monteiro, D. McGrouther, J.N.
Chapman, H.-J. Drouhin, R. McClintock, M. Razeghi, "Core-shell GaN-ZnO Moth-eye Nanostructure
Arrays Grown on a-SiO2/Si (111) as a basis for Improved InGaN-based Photovoltaics and
LEDs," Photonics and Nanostructures - Fundamentals and Applications (2015) (March 30,
2015)[http://dx.doi.org/10.1016/j.photonics.2015.03.003].
M. Razeghi, Q. Y. Lu, N. Bandyopadhyay, W. Zhou, D. Heydari, Y. Bai, and S. Slivken, "Quantum
cascade lasers: from tool to product," Optics Express Vol. 23 Issue 7, pp. 8462-8475 (March 25,
2015) [http://dx.doi.org/10.1364/OE.23.008462].
D. J. Rogers, S. Sundaram, Y. El Gmili, F. Hosseini Teherani, P. Bove, V. Sandana, P. L. Voss, A.
Ougazzaden, A. Rajan, K.A. Prior, R. McClintock, & M. Razeghi, "Scale-up of the Chemical Lift-off of
(In)GaN-based p-i-n Junctions from Sapphire Substrates Using Sacrificial ZnO Template
Layers," Proc. SPIE 9364 Oxide-based Materials and Devices VI, 936424 (March 24,
2015) [http://dx.doi.org/10.1117/12.2175897].
V. E. Sandana, D. J. Rogers, F. Hosseini Teherani, P. Bove, N. Ben Sedrine, M. R. Correia, T. Monteiro, R.
McClintock, and M. Razeghi, "Structural, Optical, Electrical and Morphological Study of
Transparent p-NiO/n-ZnO Heterojunctions Grown by PLD," Proc. SPIE 9364 Oxide-based Materials
and Devices VI, 93641O (March 24, 2015) (March 24, 2015) [http://dx.doi.org/10.1117/12.2177427].
D. Heydari, Y. Bai, N. Bandyopadhyay, S. Slivken, and M. Razeghi, "High brightness angled cavity
quantum cascade lasers," Applied Physics Letters 106 091105 (2015) (March 6,
2015) [http://dx.doi.org/10.1063/1.4914477].
C. Bayram, J. Ott, K. T. Shiu, C. W. Cheng, Y. Zhu, J. Kim, D. K. Sadana, M. Razeghi, "Polarization-free
GaN emitters in the ultraviolet and visible spectra via heterointegration on CMOS-compatible Si
(100)," Proc. SPIE 9370 Quantum Sensing and Nanophotonic Devices XII, 93702F (February 8, 2015);
(February 8, 2015) [http://dx.doi.org/10.1117/12.2082894].
Q. Y. Lu, M. Razeghi, S. Slivken, N. Bandyopadhyay, Y. Bai, W. J. Zhou, M. Chen, D. Heydari, A.
Haddadi, R. McClintock, M. Amanti, and C. Sirtori, "High power frequency comb based on midinfrared quantum cascade laser at λ ~9μm," Appl. Phys. Lett. 106 051105 (2015) (February 2, 2015) [
http://dx.doi.org/10.1063/1.4907646].
A. Haddadi, R. Chevallier, G. Chen, A. M. Hoang, and M. Razeghi, "Bias-selectable dual-band mid/long-wavelength infrared photodetectors based on InAs/InAs1−xSbx type-II superlattices," Applied
Physics Letters 106 011104 (2015) (January 8, 2015) [ http://dx.doi.org/10.1063/1.4905565].
Guanxi Chen, Abbas Haddadi, Anh-Minh Hoang, Romain Chevallier, and Manijeh
Razeghi, "Demonstration of type-II superlattice MWIR minority carrier unipolar imager for high
operation temperature application," Optics Letters Vol. 40 Iss. 1, pp. 29–32 (2015) (December 18,
2014) [http://dx.doi.org/10.1364/OL.40.000045].
Q. Y. Lu, S. Slivken, N. Bandyopadhyay, Y. Bai, and M. Razeghi, "Widely tunable room temperature
semiconductor terahertz source ," Appl. Phys. Lett. 105 201102 (2014) (November 17, 2014) [
http://dx.doi.org/10.1063/1.4902245].
A. Haddadi , G. Chen , R. Chevallier , A. M. Hoang , and M. Razeghi, "InAs/InAs1-xSbx type-II
superlattices for high performance long wavelength infrared detection," Appl. Phys. Lett. 105 121104
(2014) (September 22, 2014) [http://dx.doi.org/10.1063/1.4896271].
15. N. Bandyopadhyay, Y. Bai, S. Slivken, and M. Razeghi, "High power operation of λ ∼ 5.2–11 μm strain
balanced quantum cascade lasers based on the same material composition ," Appl. Phys. Lett.
105 071106 (2014) (August 20, 2014) [http://dx.doi.org/10.1063/1.4893746].
16. Manijeh Razeghi and Binh-Minh Nguyen, "Advances in mid-infrared detection and imaging: a key
issues review ," Rep. Prog. Phys. 77 (2014) 082401 (August 4, 2014)[http://iopscience.iop.org/00344885/77/8/082401].
17. Erdem Cicek, Ryan McClintock, Abbas Haddadi, William A. Gaviria Rojas, and Manijeh Razeghi, "High
Performance Solar-Blind Ultraviolet Focal Plane Arrays Based on AlGaN,"IEEE Journal of Quantum
Electronics Vol. 50, Issue 8, p 591-595 (August 1, 2014) [http://dx.doi.org/10.1109/JQE.2014.2328434 ].
18. M. Razeghi, A. Haddadi, A.M. Hoang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, P.R. Bijjam,
and R. McClintock, "Antimonide-Based Type II Superlattices: A Superior Candidate for the Third
Generation of Infrared Imaging Systems," Journal of ELECTRONIC MATERIALS Vol. 43, No. 8, 2014
(August 1, 2014) [http://dx.doi.org/10.1007/s11664-014-3080-y].
19. Q. Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "Monolithic terahertz source," Nature
Photonics | Research Highlights (July 31, 2014)[http://dx.doi.org/10.1038/nphoton.2014.185].
20. A. M. Hoang, G. Chen, R. Chevallier, A. Haddadi, and M. Razeghi, "High performance photodiodes
based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection," Appl. Phys.
Lett. 104 251105 (2014) (June 23, 2014) [http://dx.doi.org/10.1063/1.4884947].
21. Q. Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai, and M. Razeghi, "Continuous operation of a
monolithic semiconductor terahertz source at room temperature," Appl. Phys. Lett. 104 221105 (2014)
(June 3, 2014) [http://dx.doi.org/10.1063/1.4881182].
22. M. Razeghi, "Superlattice-based quantum devices: from theory to practical applications," Waves in
Random and Complex Media (April 23, 2014)[http://dx.doi.org/10.1080/17455030.2014.899724].
23. A. Rajan, S. Sundaram, Y. El Gmili, P. L. Voss, K. Pantzas, T. Moudakir, A. Ougazzaden, D. J. Rogers, F.
Hosseini Teherani, V. E. Sandana, P. Bove, K. Prior, R. McClintock & M. Razeghi, "Novel Method for
Reclaim/Reuse of Bulk GaN Substrates using Sacrifical ZnO Release Layers," Proc. SPIE
8987 Oxide-based Materials and Devices V, 898719 (April 2,
2014) [http://dx.doi.org/10.1117/12.2043704].
24. Bayram, C., Ott, J. A., Shiu, K.-T., Cheng, C.-W., Zhu, Y., Kim, J., Razeghi, M. and Sadana, D. K.
, "Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy," Adv. Funct.
Mater. 2014 (April 1, 2014) [http://dx.doi.org/10.1002/adfm.201304062].
25. G. Chen , A. M. Hoang , and M. Razeghi, "Evaluating the size-dependent quantum efficiency loss in a
SiO2-Y2O3 hybrid gated type-II InAs/GaSb long-infrared photodetector array," Applied Physics
Letters 104 103509 (2014) (March 14, 2014) [ http://dx.doi.org/10.1063/1.4868486].
26. V. E. Sandana ; D. J. Rogers ; F. Hosseini Teherani ; P. Bove ; R. McClintock ; M. Razeghi , "Nickel
oxide growth on Si (111), c-Al2O3 and FTO/glass by pulsed laser deposition,"03/07/2014 (March 7,
2014) [http://dx.doi.org/10.1117/12.2057620].
27. F. Callewaert, A.M. Hoang, and M. Razeghi, "Generation-recombination and trap-assisted tunneling in
long wavelength infrared minority electron unipolar photodetectors based on InAs/GaSb
superlattice," Applied Physics Letters 104, 053508 (2014) (February 6,
2014) [http://dx.doi.org/10.1063/1.4864403].
28. Vinod E. Sandana; David. J. Rogers; Ferechteh Hosseini Teherani; Philippe Bove; Manijeh
Razeghi, "Investigation of the factors influencing nanostructure array growth by PLD towards
reproducible wafer-scale growth," physica status solidi (a) Applications and Materials Science. Volume
211 Issue 2, pages 449–454, (February 2014) (January 14,
2014)[http://dx.doi.org/10.1002/pssa.201300497].
29. S. Slivken, N. Bandyopadhyay, Y. Bai, Q. Y. Lu, and M. Razeghi, "Extended electrical tuning of
quantum cascade lasers with digital concatenated gratings," Appl. Phys. Lett. 103231110 (2013)
(December 6, 2013) [http://dx.doi.org/10.1063/1.4841635].
30. G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, S. R. Darvish, and M. Razeghi, "Effect of sidewall
surface recombination on the quantum efficiency in a Y2O3 passivated gated type-II InAs/GaSb longinfrared photodetector array," Appl. Phys. Lett. 103 223501 (2013) (November 25,
2013) [http://dx.doi.org/10.1063/1.4833026].
31. M. Razeghi; Q.Y. Lu; N. Bandyopadhyay; S. Slivken; Y. Bai, "Room temperature compact THz sources
based on quantum cascade laser technology," Proc. SPIE 8846 Terahertz Emitters, Receivers, and
32.
33.
34.
35.
36.
37.
38.
39.
40.
41.
42.
43.
44.
45.
Applications IV, 884602 (September 24, 2013) (November 24,
2013) [http://dx.doi.org/10.1117/12.2027979].
E. Cicek, R. McClintock, C. Y. Cho, B. Rahnema, and M. Razeghi, "AlxGa1-xN-based back-illuminated
solar-blind photodetectors with external quantum efficiency of 89% ," Appl. Phys. Lett. 103 191108
(2013) (November 5, 2013) [http://dx.doi.org/10.1063/1.4829065].
Manijeh Razeghi; Neelanjan Bandyopadhyay; Yanbo Bai; Quanyong Lu; Steven Slivken, "Recent
advances in mid infrared (3-5 μm) quantum cascade lasers," Optical Materials Express Vol. 3, Issue
11, pp. 1872-1884 (2013) (November 2, 2013) [http://dx.doi.org/10.1364/OME.3.001872].
E. Cicek, R. McClintock, C. Y. Cho, B. Rahnema, and M. Razeghi, "AlxGa1−xN-based solar-blind
ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate," Appl. Phys.
Lett. 103 181113 (2013) (October 30, 2013) [http://dx.doi.org/10.1063/1.4828497].
David J. Rogers; Philippe Bove; Eric V. Sandana; Ferechteh Hosseini Teherani; Ryan McClintock;
Manijeh Razeghi, "SOLID-STATE DEEP UV EMITTERS/DETECTORS: Zinc oxide moves further
into the ultraviolet," Laser Focus World. 2013;49(10):33-36. (October 10,
2013) [http://www.laserfocusworld.com/articles/print/volume-49/issue-10/features/solid-state-deep-uvemitters-detectors-zinc-oxide-moves-further-into-the-ultraviolet.html].
Chuanle Zhou, I. Vurgaftman, C. L. Canedy, C. S. Kim, M. Kim, W. W. Bewley, C. D. Merritt, J. Abell, J.
R. Meyer, A. Hoang, A. Haddadi, M. Razeghi, and M. Grayson, "Thermal conductivity tensors of the
cladding and active layers of antimonide infrared lasers and detectors," Optical Materials
Express. 2013;3(10):1632-1640. (October 1, 2013)[http://dx.doi.org/10.1364/OME.3.001632].
Vinod E. Sandana, David J. Rogers, Ferechteh Hosseini Teherani, Philippe Bove, Michael Molinari,
Michel Troyon, Alain Largeteau, Gérard Demazeau, Colin Scott, Gaelle Orsal, Henri-Jean Drouhin,
Abdallah Ougazzaden, Manijeh Razeghi, "Growth of “moth-eye” ZnO nanostructures on Si(111), cAl2O3, ZnO and steel substrates by pulsed laser deposition,"Phys. Status Solidi C. 1-5 (2013) (August
6, 2013) [http://dx.doi.org/10.1002/pssc.201200975].
G. Chen, A. M. Hoang, S. Bogdanov, A. Haddadi, P. R. Bijjam, B.-M. Nguyen, and M.
Razeghi, "Investigation of impurities in type-II InAs/GaSb superlattices via capacitance-voltage
measurement ," Applied Physics Letters 103 033512 (2013) (July 17,
2013) [http://link.aip.org/link/doi/10.1063/1.4813479].
Q. Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai, and M. Razeghi , "Room temperature terahertz
quantum cascade laser sources with 215 μW output power through epilayer-down mounting ," Appl.
Phys. Lett. 103 011101 (2013) (July 1, 2013) [http://link.aip.org/link/doi/10.1063/1.4812814].
M. Razeghi, A. Haddadi, A.M. Hoang, E.K. Huang, G. Chen, S. Bogdanov, S.R. Darvish, F. Callewaert, R.
McClintock, "Advances in antimonide-based Type-II superlattices for infrared detection and imaging
at center for quantum devices," Infrared Physics & Technology Volume 59, Pages 41-52 (2013) (July 1,
2013)[http://dx.doi.org/10.1016/j.infrared.2012.12.008].
M. Razeghi; A.M. Hoang; A. Haddadi; G. Chen; S. Ramezani-Darvish; P. Bijjam; P. Wijewarnasuriy; E.
Decuir, "High-performance bias-selectable dual-band Short-/Mid-wavelength infrared
photodetectors and focal plane arrays based on InAs/GaSb/AlSb Type-II superlattices," Proc. SPIE
8704 Infrared Technology and Applications XXXIX, 87041W (June 18, 2013) (June 18,
2013) [http://dx.doi.org/10.1117/12.2019145].
M. Razeghi; A. Haddadi; A.M. Hoang; G. Chen; S. Ramezani-Darvish; P. Bijjam, "High-performance
bias-selectable dual-band mid-/long-wavelength infrared photodetectors and focal plane arrays based
on InAs/GaSb Type-II superlattices," Proc. SPIE 8704 Infrared Technology and Applications XXXIX,
87040S (June 11, 2013) (June 11, 2013)[http://dx.doi.org/10.1117/12.2019147].
Yufei Ma; Rafał Lewicki; Manijeh Razeghi; Xin Yu; Frank K. Tittel, "Sensitive detection of CO and
N2O using a high power CW 4.61 μm dfb-QCL based QEPAS sensor," CLEO: Science and
Innovations CLEO_SI 2013. 2013:JW2A.80 (June 9,
2013) [http://dx.doi.org/10.1364/CLEO_AT.2013.JW2A.80].
Chu-Young Cho, Yinjun Zhang, Erdem Cicek, Benjamin Rahnema, Yanbo Bai, Ryan McClintock, and
Manijeh Razeghi , "Surface plasmon enhanced light emission from AlGaN-based ultraviolet lightemitting diodes grown on Si (111) ," Appl. Phys. Lett. 102 211110 (2013) (May 31,
2013) [http://dx.doi.org/10.1063/1.4809521].
S. Gautier, T. Moudakir, G. Patriarche, D.J. Rogers, V.E. Sandana, F. Hosseini Teherani, P. Bove, Y. El
Gmili, K. Pantzas, Suresh Sundaram, D. Troadec, P.L. Voss, M. Razeghi, A. Ougazzaden, "Structural
and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass
46.
47.
48.
49.
50.
51.
52.
53.
54.
55.
56.
57.
58.
59.
substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale
MOVPE growth on ZnO-buffered sapphire," Journal of Crystal Growth Volume 370, Pages 63-67
(2013) (May 1, 2013)[http://dx.doi.org/10.1016/j.jcrysgro.2012.08.048].
C. Bayram ; K. T. Shiu ; Y. Zhu ; C. W. Cheng ; D. K. Sadana ; F. H. Teherani ; D. J. Rogers ; V. E.
Sandana ; P. Bove ; Y. Zhang ; S. Gautier ; C.-Y. Cho ; E. Cicek ; Z. Vashaei ; R. McClintock ; M.
Razeghi, "Engineering future light emitting diodes and photovoltaics with inexpensive materials:
Integrating ZnO and Si into GaN-based devices," Proc. SPIE 8626 Oxide-based Materials and Devices
IV, 86260L (March 18, 2013) (March 18, 2013) [http://dx.doi.org/10.1117/12.2009999].
Sandana, V. E.; Rogers, D. J.; Teherani, F. Hosseini; Bove, P.; Razeghi, M., "Graphene versus oxides for
transparent electrode applications," Proc. SPIE 8626 Oxide-based Materials and Devices IV, 862603
(March 18, 2013) (March 18, 2013) [http://dx.doi.org/10.1117/12.2012865].
D. J. Rogers ; F. Hosseini Teherani ; P. Bove ; A. Lusson ; M. Razeghi , "Investigation of MgZnO/ZnO
heterostructures grown on c-sapphire substrates by pulsed laser deposition,"Proc. SPIE 8626 Oxidebased Materials and Devices IV, 86261X (March 18, 2013) (March 18,
2013) [http://dx.doi.org/10.1117/12.2013601].
D. J. Rogers ; P. Bove ; F. Hosseini Teherani ; K. Pantzas ; T. Moudakir ; G. Orsal ; G. Patriarche ; S.
Gautier ; A. Ougazzaden ; V. E. Sandana ; R. McClintock ; M. Razeghi ,"Comparison of chemical and
laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates," Proc.
SPIE 8626 Oxide-based Materials and Devices IV, 862611 (March 18, 2013) (March 18,
2013) [http://dx.doi.org/10.1117/12.2010046].
Rogers, D. J.; Carroll, C.; Bove, P.; Sandana, V. E.; Goubert, L.; Largeteau, A.; Teherani, F. Hosseini;
Demazeau, G.; McClintock, R.; Drouhin, H.-J.; Razeghi, M., "Energy harvesting from millimetric ZnO
single wire piezo-generators," Oxide-based Materials and Devices III. Edited by Teherani Ferechteh H.;
Look, David C.; Rogers, David J. Proceedings of the SPIE, Volume 8263, article id. 82631X, 7 pp. (2012).
(February 9, 2013) [http://dx.doi.org/10.1117/12.927621].
A.M. Hoang, G. Chen, A. Haddadi and M. Razeghi, "High performance bias-selectable dual-band
short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb
superlattices," SPIE Proceedings Vol. 8631, p. 86311K-1, Photonics West, San Francisco, CA (February
5, 2013) [http://dx.doi.org/10.1117/12.2019103].
E. Cicek, R. McClintock, Z. Vashaei, Y. Zhang, S. Gautier, C.Y. Cho and M. Razeghi, "Crack-free
AlGaN for solar-blind focal plane arrays through reduced area expitaxy," Applied Physics
Letters Vol. 102, No. 05, p. 051102-1 (February 4, 2013) [http://link.aip.org/link/?APL/102/051102].
C. Bayram, K.T. Shiu, Y. Zhu, C.W. Cheng, D.K. Sadana, Z. Vashaei, E. Cicek, R. McClintock and M.
Razeghi, "Gallium nitride on silicon for consumer & scalable photonics," SPIE Proceedings Vol. 8631,
p. 863112-1, Photonics West, San Francisco, CA (February 4,
2013) [http://dx.doi.org/10.1117/12.2008788].
Q.Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "Widely tuned room temperature
terahertz quantum cascade laser sources," SPIE Proceedings Vol. 8631, p. 863108-1, Photonics West,
San Francisco, CA (February 3, 2013) [http://dx.doi.org/10.1117/12.2019101].
S. Slivken, N. Bandyopadhyay, S. Tsao, S. Nida, Y. Bai, Q.Y. Lu and M. Razeghi, "Dual section
quantum cascade lasers with wide electrical tuning," SPIE Proceedings Vol. 8631, p. 86310P-1,
Photonics West, San Francisco, CA (February 3, 2013) [http://dx.doi.org/10.1117/12.2008506].
N. Bandyopadhyay, Y. Bai, S. Tsao, S. Nida, S. Slivken and M. Razeghi, "Continuous wave, room
temperature operation of λ ~ 3μm quantum cascade laser," SPIE Proceedings Vol. 8631, p. 86310M-1,
Photonics West, San Francisco, CA (February 3, 2013) [http://dx.doi.org/10.1117/12.2019105].
Q.Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "High performance terahertz quantum
cascade laser sources based on intracavity difference frequency generation ," Optics Express Vol. 21,
No. 1, p. 968 (January 14, 2013) [http://dx.doi.org/10.1364/OE.21.000968].
Y. Ma, R. Lewicki, M. Razeghi and F. Tittel, "QEPAS based ppb-level detection of CO and N2O using
a high power CW DFB-QCL," Optics Express Vol. 21, No. 1, p. 1008 (January 14,
2013) [http://dx.doi.org/10.1364/OE.21.001008].
A.M. Hoang, G. Chen, A. Haddadi and M. Razeghi, "Demonstration of high performance bias-slectable
dual-band short-/mid-wavelength infrared photodetectors based on type-II InAs/GaSb/AlSb
superlattices," Applied Physics Letters Vol. 102, No. 1, p. 011108-1 (January 7,
2013) [http://link.aip.org/link/?APL/102/011108].
60. Y. Zhang, S. Gautier, C. Cho, E. Cicek, Z, Vashaei, R. McClintock, C. Bayram, Y. Bai and M.
Razeghi, "Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral
epitaxial overgrowth of AlN on Si(111)," Applied Physics Letters Vol. 102, No. 1, p. 011106-1 (January
7, 2013) [http://link.aip.org/link/?APL/102/011106].
61. E.K. Huang, A. Haddadi, G. Chen, A.M. Hoang, and M. Razeghi, "Active and passive infrared imager
based on short-wave and mid-wave type-II superlattice dual-band detectors,"Optics Letters Vol. 38,
no. 1, p. 22-24 (January 1, 2013) [http://dx.doi.org/10.1364/OL.38.000022].
62. Q.Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "Widely tuned room temperature
terahertz quantum cascade laser sources based on difference-frequency generation," Applied Physics
Letters Vol. 101, No. 25, p. 251121-1 (December 17, 2012) [http://link.aip.org/link/?APL/101/251121].
63. N. Bandyopadhyay, Y. Bai, S. Tsao, S. Nida, S. Slivken and M. Razeghi, "Room temperature continuous
wave operation of λ ~ 3-3.2 μm quantum cascade lasers," Applied Physics Letters Vol. 101, No. 24, p.
241110-1 (December 10, 2012) [http://link.aip.org/link/?APL/101/241110].
64. G. Chen, E.K. Huang, A.M. Hoang, S. Bogdanov, S.R. Darvish, and M. Razeghi, "Surface leakage
investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors," Applied Physics
Letters Vol. 101, No. 21, p. 213501-1 (November 19, 2012) [http://link.aip.org/link/?APL/101/213501].
65. E.K. Huang, M.A. Hoang, G. Chen, S.R. Darvish, A. Haddadi, and M. Razeghi, "Highly selective twocolor mid-wave and long-wave infrared detector hybrid based on Type-II superlattices," Optics
Letters Vol. 37, No. 22, p. 4744-4746 (November 15, 2012) [http://dx.doi.org/10.1364/OL.37.004744].
66. Y. Bai, S. Slivken, Q.Y. Lu, N. Bandyopadhyay, and M. Razeghi, "Angled cavity broad area quantum
cascade lasers," Applied Physics Letters Vol. 100, Np. 8, p. 081106-1 (August 20,
2012) [http://link.aip.org/link/?APL/101/081106].
67. M.P. Ulmer, E. Cicek, R. McClintock, Z. Vashaei and M. Razeghi, "Temperature dependence of the
dark current and activation energy at avalanche onset of GaN Avalanche Photodiodes," SPIE
Proceedings Vol. 8460, p. 84601G-1 (August 15, 2012) [http://dx.doi.org/10.1117/12.929138].
68. C. Zhou, B.M. Nguyen, M. Razeghi and M. Grayson, "Thermal Conductivity of InAs/GaSb Type II
Superlattice," Journal of Electronic Materials Vol. 41, No. 9, p. 2322-2325 (August 1,
2012) [http://dx.doi.org/10.1007/s11664-012-2146-y].
69. S. Slivken, N. Bandyopadhyay, S. Tsao, S. Nida, Y. Bai, Q.Y. Lu and M. Razeghi, "Sampled grating,
distributed feedback quantum cascade lasers with broad tunability and continuous operation at
room temperature," Applied Physics Letters Vol. 100, No. 26, p. 261112-1 (June 25,
2012) [http://link.aip.org/link/?APL/100/261112].
70. J. Hubbs, V. Nathan, M. Tidrow, and M. Razeghi, "Radiometric characterization of long-wavelength
infrared type II strained layer superlattice focal plane array under low-photon irradiance
conditions," Optical Engineering Vol. 51, No. 6, p. 064002-1 (June 15,
2012) [http://dx.doi.org/10.1117/1.OE.51.6.064002].
71. E.K. Huang, S. Abdollahi Pour, M.A. Hoang, A. Haddadi, M. Razeghi and M.Z. Tidrow, "Low irradiance
background limited type-II superlattice MWIR M-barrier imager," OSA Optics Letters (OL) Vol. 37,
No. 11, p. 2025-2027 (June 1, 2012) [http://dx.doi.org/10.1364/OL.37.002025].
72. N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "High power, continuous wave, room
temperature operation of λ ~ 3.4 μm and λ ~ 3.55 μm InP-based quantum cascade lasers," Applied
Physics Letters Vol. 100, No. 21, p. 212104-1 (May 21, 2012) [http://link.aip.org/link/?APL/100/212104].
73. A.M. Hoang, G. Chen, A. Haddadi, S. Abdollahi Pour, and M. Razeghi, "Demonstration of
shortwavelength infrared photodiodes based on type-II InAs/GaSb/AlSb superlattices,"Applied
Physics Letters Vol. 100, No. 21, p. 211101-1 (May 21, 2012) [http://link.aip.org/link/?APL/100/211101].
74. E. Cicek, Z. Vashaei, E.K. Huang, R. McClintock and M. Razeghi, "AlGaN-based deep-ultraviolet 320 x
256 focal plane array," OSA Optics Letters Vol. 37, No. 5, p. 896-898 (March 1,
2012) [http://dx.doi.org/10.1364/OL.37.000896].
75. A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen and M. Razeghi, "High operability 1024
x 1024 long wavelength Type-II superlattice focal plane array," IEEE Journal of Quantum Electronics
(JQE) Vol. 48, No. 2, p. 221-228 (February 10, 2012) [http://dx.doi.org/10.1109/JQE.2011.2175903].
76. M. Razeghi, "Superlattice sees colder objects in two colors and high resolution," SPIE
Newsroom (February 10, 2012) [http://spie.org/x85456.xml].
77. Rogers, D. J.; Ougazzaden, A.; Sandana, V. E.; Moudakir, T.; Ahaitouf, A.; Teherani, F. Hosseini; Gautier,
S.; Goubert, L.; Davidson, I. A.; Prior, K. A.; McClintock, R. P.; Bove, P.; Drouhin, H.-J.; Razeghi,
M., "Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template
78.
79.
80.
81.
82.
83.
84.
85.
86.
87.
88.
89.
90.
91.
92.
layers to chemically lift-off GaN from c-sapphire,"Proc. SPIE 8263 Oxide-based Materials and Devices
III, 82630R (February 9, 2012) (February 9, 2012) [http://dx.doi.org/10.1117/12.916013].
Harinipriya, S.; Usmani, B.; Rogers, D. J.; Sandana, V. E.; Teherani, F. Hosseini; Lusson, A.; Bove, P.;
Drouhin, H.-J.; Razeghi, M., "ZnO nanorod electrodes for hydrogen evolution and storage," Proc.
SPIE 8263 Oxide-based Materials and Devices III, 82631Y (February 9, 2012) (February 9,
2012) [http://dx.doi.org/10.1117/12.927622].
Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken, Q.Y. Lu, and M. Razeghi, "Substrate emission quantum
cascade ring lasers with room temperature continuous wave operation,"SPIE Proceedings Vol. 8268,
p. 82680N (January 22, 2012) [http://dx.doi.org/10.1117/12.913655].
A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen and M. Razeghi, "Low frequency noise in
1024 x 1024 long wavelength infrared focal plane array base on Type-II InAs/GaSb
superlattice," SPIE Proceedings Vol. 8268, p. 82680X (January 22,
2012) [http://dx.doi.org/10.1117/12.913983].
E.K. Huang and M. Razeghi, "World's first demonstration of type-II superlattice dual band 640 x 512
LWIR focal plane array," SPIE Proceedings Vol. 8268, p. 82680Z (January 22,
2012) [http://dx.doi.org/10.1117/12.913662].
R. McClintock, A. Haddadi and M. Razeghi, "Free-space optical communication using mid-infrared or
solar-blind ultraviolet sources and detectors," SPIE Proceedings Vol. 8268, p. 826810 (January 22,
2012) [http://dx.doi.org/10.1117/12.913980].
G. Chen, B.M. Nguyen, A.M. Hoang, E.K. Huang, S.R. Darvish and M. Razeghi, "Suppresion of surface
leakage in gate controlled Type-II InAs/GaSb mid-Infrared photodetectors," SPIE Proceedings Vol.
8268, p. 826811 (January 22, 2012) [http://dx.doi.org/10.1117/12.913741].
C. Bayram, D.K. Sadana, Z. Vashaei and M. Razeghi, "Reliable GaN-based resonant tunneling diodes
with reproducible room-temperature negative differential resistance," SPIE Proceedings Vol. 8268, p.
826827 (January 22, 2012) [http://dx.doi.org/10.1117/12.913740].
G. Chen; B.-M. Nguyen; A.M. Hoang; E.K. Huang; S.R. Darvish; M. Razeghi, "Suppression of surface
leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors,"Proc. SPIE 8268 Quantum
Sensing and Nanophotonic Devices IX, 826811 (January 20, 2012) (January 20,
2012) [http://dx.doi.org/10.1117/12.913741].
A. Haddadi, S.R. Darvish, G. Chen, A.M. Hoang, B.M. Nguyen and M. Razeghi, "High operability 1024
x 1024 long wavelength infrared focal plane array base on Type-II InAs/GaSb superlattice," AIP
Conference Proceedings Vol. 1416, p. 56-58_NGS15 Conf_Blacksburg, VA_Aug 1-5, 2011 (December 31,
2011) [http://dx.doi.org/10.1063/1.3671697].
Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken, Q.Y. Lu, D. Caffey, M. Pushkarsky, T. Day and M.
Razeghi, "High power, continuous wave, quantum cascade ring laser," Applied Physics Letters Vol. 99,
No. 26, p. 261104-1 (December 26, 2011) [http://link.aip.org/link/?APL/99/261104].
M. Razeghi, "Stable single mode terahertz semiconductor sources at room temperature," 2011
International Semiconductor Device Research Symposium ISDRS [6135180] (2011). (December 7,
2011) [http://dx.doi.org/10.1109/ISDRS.2011.6135180].
Manijeh Razeghi, "Recent advances of terahertz quantum cascade lasers," Proc. SPIE 8119 Terahertz
Emitters, Receivers, and Applications II, 81190D (September 07, 2011) (November 7,
2011) [http://dx.doi.org/10.1117/12.899131].
Dave Rogers, V. E. Sandana, F. Hosseini Teherani, S. Gautier, G. Orsal, T. Moudakir, M. Molinari, M.
Troyon, M. Peres, M. J. Soares, A. J. Neves, T. Monteiro, D. McGrouther, J. N. Chapman, H. J. Drouhin,
M. Razeghi, and A. Ougazzaden , "Use of PLD-grown moth-eye ZnO nanostructures as templates for
MOVPE growth of InGaN-based photovoltaics,"Renewable Energy and the Environment OSA
Technical Digest paper PWB3, Optical Society of America, (2011) (November 2,
2011) [http://www.opticsinfobase.org/abstract.cfm?uri=PV-2011-PWB3].
G. Chen, B.-M. Nguyen, A.M. Hoang, E.K. Huang, S.R. Darvish, and M. Razeghi, "Elimination of
surface leakage in gate controlled Type-II InAs/GaSb mid-infrared photodetectors," Applied Physics
Letters Vol. 99, No. 18, p. 183503-1 (October 31, 2011) [http://link.aip.org/link/?APL/99/183503].
Q.Y. Lu, N. Bandyopadhyay, S. Slivken, Y. Bai and M. Razeghi, "Room temperature single-mode
terahertz sources based on intracavity difference-frequency generation in quantum cascade
lasers," Applied Physics Letters Vol. 99, Issue 13, p. 131106-1 (September 26,
2011) [http://link.aip.org/link/?APL/99/131106].
93. E. Cicek, Z. Vashaei, R. McClintock, and M. Razeghi, "Deep ultraviolet (254 nm) focal plane
array," SPIE Proceedings Conference on Infrared Sensors, Devices and Applications; and Single Photon
Imaging II, Vol. 8155, p. 81551O-1 (August 21, 2011) [http://dx.doi.org/10.1117/12.904984].
94. B.M. Nguyen, G. Chen, A.M. Hoang, S. Abdollahi Pour, S. Bogdanov, and M. Razeghi, "Effect of contact
doping on superlattice-based minority carrier unipolar detectors," Applied Physics Letters Vol. 99,
No. 3, p. 033501-1 (July 18, 2011) [ http://link.aip.org/link/?APL/99/033501].
95. M. Razeghi; Y. Bai; N. Bandyopadhyay; B. Gokden; Q.Y. Lu; S. Slivken, "Recent advances in IR
semiconductor laser diodes and future trends," Photonics Society Summer Topical Meeting Series IEEE
[6000041], pp. 55-56 (2011) (July 18, 2011) [http://dx.doi.org/10.1109/PHOSST.2011.6000041].
96. E.K. Huang, A. Haddadi, G. Chen, B.M. Nguyen, M.A. Hoang, R. McClintock, M. Stegall, and M.
Razeghi, "Type-II superlattice dual-band LWIR imager with M-barrier and Fabry-Perot
resonance," OSA Optics Letters Vol. 36, No. 13, p. 2560-2562 (July 1,
2011) [http://dx.doi.org/10.1364/OL.36.002560].
97. M. Razeghi, S. Abdollahi Pour, E.K. Huang, G. Chen, A. Haddadi, and B.M. Nguyen, "Type-II
InAs/GaSb photodiodes and focal plane arrays aimed at high operating temperatures," OptoElectronics Review (OER) Vol. 19, No. 3, June 2011, p. 46-54 (June 1,
2011) [http://dx.doi.org/10.2478/s11772-011-0028-0].
98. M. Razeghi, B. Gokden, S. Tsao, A. Haddadi, N. Bandyopadhyay, and S. Slivken, "Widely Tunable,
Single-Mode, High-Power Quantum Cascade Lasers," SPIE ProceedingsIntergreated Photonics:
Materials, Devices and Applications, SPIE Microtechnologies Symposium, Prague, Czech Republic, April
18-20, 2011, Vol. 8069, p. 806905-1 (May 31, 2011)[http://dx.doi.org/10.1117/12.887575].
99. Manijeh Razeghi, "Toward realizing high power semiconductor terahertz laser sources at room
temperature," Proc. SPIE 8023 Terahertz Physics, Devices, and Systems V: Advance Applications in
Industry and Defense, 802302 (May 25, 2011) (May 25, 2011) [http://dx.doi.org/10.1117/12.887986].
100. B.M. Nguyen, G. Chen, M.A. Hoang, and M. Razeghi, "Growth and Characterization of LongWavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer,"IEEE Journal of
Quantum Electronics (JQE) Vol. 47, No. 5, May 2011, p. 686-690 (May 11,
2011) [http://dx.doi.org/10.1109/JQE.2010.2103049].
101. Q.Y. Lu, Y. Bai, N. Bandyopadhyay, S. Slivken and M. Razeghi, "2.4 W room temperature continuous
wave operation of distributed feedback quantum cascade lasers," Applied Physics Letters Vol. 98, No.
18, p. 181106-1 (May 4, 2011) [ http://link.aip.org/link/?APL/98/181106].
102. Y. Bai, N. Bandyopadhyay, S. Tsao, S. Slivken and M. Razeghi, "Room temperature quantum cascade
lasers with 27% wall plug efficiency," Applied Physics Letters Vol. 98, No. 18, p. 181102-1 (May 3,
2011) [http://link.aip.org/link/doi/10.1063/1.3586773].
103. S. Bogdanov, B.M. Nguyen, A.M. Hoang, and M. Razeghi, "Surface leakage current reduction in long
wavelength infrared type-II InAs/GaSb superlattice photodiodes," Applied Physics Letters Vol. 98, No.
18, p. 183501-1 (May 2, 2011) [http://link.aip.org/link/?APL/98/183501].
104. M. Razeghi, "III-Nitride Optoelectronic Devices: From Ultraviolet Toward Terahertz," IEEE
Photonics Journal-Breakthroughs in Photonics 2010 Vol. 3, No. 2, p. 263-267 (April 26,
2011) [http://dx.doi.org/10.1109/JPHOT.2011.2135340].
105. M. Razeghi, S. Abdollahi Pour, E.K. Huang, G. Chen, A. Haddadi and B.M. Nguyen, "High operating
temperature MWIR photon detectors based on Type II InAs/GaSb superlattice," SPIE
Proceedings Infrared Technology and Applications XXXVII, Orlando, FL, Vol. 8012, p. 80122Q-1 (April
26, 2011) [http://dx.doi.org/10.1117/12.888060].
106. E.K. Huang, B.M. Nguyen, S.R. Darvish, S. Abdollahi Pour, G. Chen, A. Haddadi, and M.A.
Hoang, "Recent advances in high performance antimonide-based superlattice FPAs,"SPIE
Proceedings Infrared technology and Applications XXXVII, Orlando, FL, Vol. 8012, p. 80120T-1 (April
25, 2011) [ http://dx.doi.org/10.1117/12.887597].
107. S. Abdollahi Pour, E.K. Huang, G. Chen, A. Haddadi, B.M. Nguyen and M. Razeghi, "High operating
temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb
superlattices," Applied Physics Letters Vol. 98, No. 14, p. 143501-1 (April 4,
2011) [http://link.aip.org/link/?APL/98/143501].
108. S. Abdollahi Pour, B. Movaghar, and M. Razeghi, "Tight-binding theory for the thermal evolution of
optical band gaps in semiconductors and superlattices," American Physical Review Vol. 83, No. 11, p.
115331-1 (March 15, 2011) [http://link.aps.org/doi/10.1103/PhysRevB.83.115331].
109. Y. Bai, S.R. Darvish, N. Bandyopadhyay, S. Slivken and M. Razeghi, "Optimizing facet coating of
quantum cascade lasers for low power consumption," Journal of Applied PhysicsVol. 109, No. 5, p.
053103-1 (March 1, 2011) [http://link.aip.org/link/?JAP/109/053103].
110. D.J. Rogers, V.E. Sandana, F. Hosseini Teherani, R. McClintock, M. Razeghi, and H.J.
Drouhin, "Amorphous ZnO films grown by room temperature pulsed laser deposition on paper and
mylar for transparent electronics applications," SPIE Proceedings San Francisco, CA (January 22-27,
2011), Vol. 7940, p. 79401K (January 24, 2011)[http://dx.doi.org/10.1117/12.879928].
111. Z. Vashaei, C. Bayram, R. McClintock and M. Razeghi, "Effects of substrate quality and orientation on
the characteristics of III-nitride resonant tunneling diodes," SPIE Proceedings San Francisco, CA
(January 22-27, 2011), Vol 7945, p. 79451A (January 23, 2011) [http://dx.doi.org/10.1117/12.879858].
112. B. Gokden, Y. Bai, S. Tsao, N. Bandyopadhyay, S. Slivken and M. Razeghi, "High power 1D and 2D
photonic crystal distributed feedback quantum cascade lasers," SPIE Proceedings San Francisco, CA
(January 22-27, 2011), Vol. 7945, p. 79450C (January 23, 2011) [http://dx.doi.org/10.1117/12.879855].
113. B.M. Nguyen, G. Chen, M.A. Hoang, and M. Razeghi, "Growth and characterization of long
wavelength infrared Type-II superlattice Photodiodes on a 3," SPIE Proceedings San Francisco, CA
(January 22-27, 2011), Vol. 7945, p. 79451O (January 23, 2011) [http://dx.doi.org/10.1117/12.879860].
114. M. Ulmer, R. McClintock and M. Razeghi, "Advances in UV sensitive visible blind GaN-based
APDs," SPIE Proceedings San Francisco, CA (January 22-27, 2011), Vol. 7945, p. 79451G (January 23,
2011) [http://dx.doi.org/10.1117/12.879942].
115. M. Razeghi, C. Bayram, Z. Vashaei, E. Cicek and R. McClintock, "III-Nitride Optoelectronic Devices:
From ultraviolet detectors and visible emitters towards terahertz intersubband devices," IEEE
Photonics Society 23rd Annual Meeting November 7-10, 2010, Denver, CO, Proceedings, p. 351-352
(January 20, 2011)[http://dx.doi.org/10.1109/PHOTONICS.2010.5698904].
116. Y. Bai, N. Bandyopadhyay, S. Tsao, E. Selcuk, S. Slivken and M. Razeghi, "Highly temperature
insensitive quantum cascade lasers," Applied Physics Letters Vol. 97, No. 25 (December 20,
2010) [http://link.aip.org/link/doi/10.1063/1.3529449].
117. Q.Y. Lu, Y. Bai, N. Bandyopadhyay, Sl Slivken, and M. Razeghi, "Room-temperature continuous wave
operation of distributed feedback quantum cascade lasers with watt-level power output," Applied
Physics Letters Vol. 97, No. 23, p. 231119-1 (December 6,
2010) [http://link.aip.org/link/?APL/97/231119].
118. E.K. Huang, P.Y. Delaunay, B.M. Nguyen, S. Abdoullahi-Pour, and M. Razeghi, "Photovoltaic MWIR
type-II superlattice focal plane array on GaAs substrate," IEEE Journal of Quantum Electronics
(JQE) Vol. 46, No. 12, p. 1704-1708 (December 1, 2010) [http://dx.doi.org/10.1109/JQE.2010.2061218].
119. J.S. Yu, S. Slivken, and M. Razeghi, "Injector doping level dependent continuous-wave operation of
InP-based QCLs at λ~ 7.3 µm above room temperature," Semiconductor Science and Technology
(SST) Vol. 25, No. 12, p. 125015 (December 1, 2010) [http://stacks.iop.org/0268-1242/25/125015].
120. M. Razeghi, Y. Bai, S. Slivken, and S.R. Darvish, "High-performance InP-based midinfrared quantum
cascade lasers at Northwestern University," SPIE Optical Engineering Vol. 49, No. 11, November 2010,
p. 111103-1 (November 15, 2010) [http://dx.doi.org/10.1117/1.3497623].
121. P. Manurkar, S.R. Darvish, B.M. Nguyen, M. Razeghi and J. Hubbs, "High performance long
wavelength infrared mega-pixel focal plane array based on type-II superlattices,"Applied Physics
Letters Vol. 97, No 19, p. 193505-1 (November 8, 2010) [http://link.aip.org/link/?APL/97/193505].
122. C. Bayram, Z. Vashaei, and M. Razeghi, "Reliability in room-temperature negative differential
resistance characteristics of low-aluminum contact AlGaN/GaN double-barrier resonant tunneling
diodes," Applied Physics Letters Vol. 97, No. 18, p. 181109-1 (November 1,
2010) [http://link.aip.org/link/?APL/97/181109].
123. N. Bandyopadhyay, Y. Bai, B. Gokden, A. Myzaferi, S. Tsao, S. Slivken and M. Razeghi, "Watt level
performance of quantum cascade lasers in room temperature continuous wave operation at λ ∼ 3.76
μm," Applied Physics Letters Vol. 97, No. 13 (September 27,
2010) [http://link.aip.org/link/?APL/97/131117].
124. B. Gokden, Y. Bai, N. Bandyopadhyay, S. Slivken and M. Razeghi, "Broad area photonic crystal
distributed feedback quantum cascade lasers emitting 34 W at λ ~ 4.36 μm,"Applied Physics
Letters Vol. 97, No. 13, p. 131112-1 (September 27,
2010) [http://apl.aip.org/resource/1/applab/v97/i13/p131112_s1].
125. Z. Vashaei, C. Bayram, P. Lavenus, and M. Razeghi, "Photoluminescence characteristics of polar and
nonpolar AlGaN/GaN superlattices," Applied Physics Letters Vol. 97, No. 12, p. 121918-1 (September
20, 2010) [http://link.aip.org/link/?APL/97/121918].
126. C. Bayram, Z. Vashaei, and M. Razeghi, "Room temperature neagtive differential resistance
characteristics of polar III-nitride resonant tunneling diodes," Applied Physics LettersVol. 97, No. 9, p.
092104-1 (August 30, 2010) [http://link.aip.org/link/?APL/97/092104].
127. E. Cicek, Z. Vashaei, C. Bayram, R. McClintock, M. Razeghi and M. Ulmer, "Comparison of ultraviolet
APDs grown on free-standing GaN and sapphire substrates," ProceedingsVol. 7780, p. 77801P, SPIE
Optics and Photonics Symposium, Conference on Detectors and Imaging Devices: Infrared, Focal Plane
and Single Photon, San Diego, CA (August 4, 2010)[http://dx.doi.org/10.1117/12.863905].
128. R. McClintock, E. Cicek, Z. Vashaei, C. Bayram, M. Razeghi and M. Ulmer, "III-nitride based
avalanche photo detectors," Proceedings Vol. 7780, p. 77801B, SPIE Optics and Photonics Symposium,
Conference on Detectors and Imaging Devices: Infrared, Focal Plane and Single Photon, San Diego, CA
(August 4, 2010) [http://dx.doi.org/10.1117/12.863962].
129. E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, and M. Razeghi , "Geiger-mode operation of
ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates," Applied
Physics Letters Vol. 96, No. 26, p. 261107 (2010); (June 28,
2010) [http://link.aip.org/link/APPLAB/v96/i26/p261107/s1].
130. Z. Vashaei, E. Cicek, C. Bayram, R. McClintock and M. Razeghi, "GaN avalanche photodiodes grown
on m-plane freestanding GaN substrate," Applied Physics Letters Vol. 96, No. 20, p. 201908-1 (May 17,
2010) [http://link.aip.org/link/?APL/96/201908].
131. Manijeh Razeghi, Edward Kwei-wei Huang, Binh-Minh Nguyen, Siamak Abdollahi Pour, and Pierre-Yves
Delaunay, "Type-II Antimonide-based Superlattices for the Third Generation Infrared Focal Plane
Arrays," SPIE Proceedings Infrared Technology and Applications XXXVI, Vol. 7660, pp. 76601F (May
10, 2010)[http://dx.doi.org/10.1117/12.849527].
132. M. Razeghi, C. Bayram, R. McClintock, F. Hosseini Teherani, D.J. Rogers, and V.E. Sandana, "Novel
Green Light Emitting Diodes: Exploring Droop-Free Lighting Solutions for a Sustainable
Earth," Journal of Light Emitting Diodes Vol. 2, No. 1, p. 1-33 (April 30,
2010) [http://www.slssl.org/paper/paperview.asp?key=15].
133. Z. Vashaei, C. Bayram and M. Razeghi, "Demonstration of negative differential resistance in GaN/AlN
resonant tunneling didoes at room temperature," Journal of Applied PhysicsVol. 107, No. 8, p. 083505
(April 15, 2010) [http://dx.doi.org/10.1063/1.3372763].
134. P.Y. Delaunay and M. Razeghi, "Spatial Noise and Correctability of Type-II InAs/GaSb Focal Plane
Arrays," IEEE Journal of Quanutm Electronics April 2010, Vol. 46, No. 4, p. 584-588 (April 1,
2010) [http://dx.doi.org/10.1109/JQE.2009.2035715].
135. D.J. Rogers; V.E. Sandana; F. Hosseini Teherani; M. Razeghi, "Thin film transistors with wurtzite ZnO
channels grown on Si3N4/SiO2/Si (111) substrates by pulsed laser deposition," Proc. SPIE 7603 Oxidebased Materials and Devices, 760318 (March 02, 2010) (March 7,
2010) [http://dx.doi.org/10.1117/12.848512].
136. Y. Bai, S. Slivken, S. Kuboya, S.R. Darvish and M. Razeghi, "Quantum cascade lasers that emit more
light than heat," Nature Photonics February 2010, Vol. 4, p. 99-102 (February 1,
2010) [http://dx.doi.org/10.1038/nphoton.2009.263].
137. J.L. Pau, J. Piqueras, D.J. Rogers, F. Hosseini Teherani, K. Minder, R. McClintock, and M. Razeghi, "On
the interface properties of ZnO/Si electroluminescent diodes," Journal of Applied Physics Vol. 107,
No. 3, p. 033719-1 (February 1, 2010) [http://link.aip.org/link/?JAP/107/033719].
138. M. Razeghi and B.M. Nguyen, "Band gap tunability of Type-II Antimonide-based
superlattices," Physics Procedia Vol. 3, Issue 2, p. 1207-1212 (14th International Conference on Narrow
Gap Semiconductors and Systems NGSS-14, Sendai, Japan, July 13-17, 2009) (January 31,
2010) [http://dx.doi.org/10.1016/j.phpro.2010.01.164].
139. S. Tsao, A. Myzaferi, and M. Razeghi, "High performance quantum dot-quantum well infrared focal
plane arrays," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol. 7605, p. 76050J-1
(January 27, 2010) [http://dx.doi.org/10.1117/12.846252].
140. D.J. Rogers, F. Hosseini Teherani, V.E. Sandana, and M. Razeghi, "ZnO Thin Films & Nanostructures
for Emerging Optoelectronic Applications," SPIE Proceedings San Francisco, CA (January 22-28,
2010), Vol. 7605, p. 76050K-1 (January 27, 2010) [http://dx.doi.org/10.1117/12.862634].
141. C. Bayram, Z. Vashaei and M. Razeghi, "AlN/GaN double-barrier resonant tunneling diodes grown by
metal-organic chemical vapor deposition," Applied Physics Letters Vol. 96, No. 4, p. 042103-1 (January
25, 2010) [http://link.aip.org/link/?APL/96/042103].
142. B. Gokden, S. Slivken and M. Razeghi, "High power photonic crystal distributed feedback quantum
cascade lasers emitting at 4.5 micron," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol.
7608, p. 760806-1 (January 22, 2010) [http://dx.doi.org/10.1117/12.855649].
143. S. Slivken, Y. Bai, B. Gokden, S.R. Darvish and M. Razeghi, "Current status and potential of high
power mid-infrared intersubband lasers," SPIE Proceedings San Francisco, CA (January 22-28, 2010),
Vol. 7608, p. 76080B-1 (January 22, 2010) [http://dx.doi.org/10.1117/12.842637].
144. Y. Bai, S. Slivken, S.R. Darvish, and M. Razeghi, "Very high wall plug efficiency of quantum cascade
lasers," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol. 7608, p. 76080F-1 (January 22,
2010) [http://dx.doi.org/10.1117/12.855650].
145. M. Razeghi, B.M. Nguyen, P.Y. Delaunay, S. Abdollahi Pour, E.K.W. Huang, P. Manukar, S. Bogdanov,
and G. Chen, "High operating temperature MWIR photon detectors based on Type-II InAs/GaSb
superlattice," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol. 7608, p. 76081Q-1
(January 22, 2010) [http://dx.doi.org/10.1117/12.840422].
146. B.M. Nguyen, S. Abdollahi Pour, S. Bogdanov and M. Razeghi, "Minority electron unipolar
photodetectors based on Type-II InAs/GaSb/AlSb superlattices for very long wavelength infrared
detection," SPIE Proceedings San Francisco, CA (January 22-28, 2010), Vol. 7608, p. 760825-1 (January
22, 2010) [http://dx.doi.org/10.1117/12.855635].
147. M. Razeghi, S. Slivken, Y. Bai, B. Gokden, and S.R. Darvish, "High power quantum cascade
lasers," New Journal of Physics (NJP) Volume 11, p. 125017 (December 1,
2009)[http://stacks.iop.org/1367-2630/11/125017].
148. Y. Bai, S. Slivken, S.R. Darvish, A. Haddadi, B. Gokden and M. Razeghi, "High power broad area
quantum cascade lasers," Applied Physics Letters Vol. 95, No. 22, p. 221104-1 (November 30,
2009) [http://link.aip.org/link/?APL/95/221104].
149. C. Bayram, N. Pere-Laperne, and M. Razeghi, "Effects of well width and growth temperature on
optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical
vapor deposition," Applied Physics Letters Vol. 95, No. 20, p. 201906-1 (November 16,
2009) [http://link.aip.org/link/?APL/95/201906].
150. M. Razeghi; Y. Bai; S. Slivken; S. Kuboya; S.R. Darvish, "Recent performance records for mid-IR
quantum cascade lasers," Terahertz and Mid Infrared Radiation: Basic Research and Practical
Applications 2009. TERA-MIR International Workshop [5379656], (2009) (November 9,
2009) [http://dx.doi.org/10.1109/TERAMIR.2009.5379656].
151. B.M. Nguyen, S. Bogdanov, S. Abdollahi Pour, and M. Razeghi, "Minority electron unipolar
photodetectors based on Type-II InAs/GaSb/AlSb superlattices for very long wavelength infrared
detection," Applied Physics Letters Vol. 95, No. 18, p. 183502 (November 2,
2009) [http://link.aip.org/link/?APL/95/183502].
152. S. Abdollahi Pour, B.M. Nguyen, S. Bogdanov, E.K. Huang, and M. Razeghi, "Demonstration of high
performance long wavelength infrared Type-II InAs/GaSb superlattice photodidoe grown on GaAs
substrate," Applied Physics Letters Vol. 95, No. 17, p. 173505 (October 26,
2009) [http://link.aip.org/link/?APL/95/173505].
153. P.Y. Delaunay and M. Razeghi, "Noise analysis in Type-II InAs/GaSb Focal Plane Arrays," Virtual
Journal of Nanoscale Science and Technology Vol. 20, No. 14 (October 5, 2009)[http://www.vjnano.org ].
154. F. Hosseini Teherani; M. Razeghi; D.J. Rogers; Can Bayram; R. McClintock, "Hybrid green LEDs with
n-type ZnO substituted for N-type GaN in an inverted P-N junction," LEOS Annual Meeting
Conference Proceedings LEOS '09. IEEE, [5343231] (2009) (October 4,
2009) [http://dx.doi.org/10.1109/LEOS.2009.5343231].
155. N. Péré-Laperne, C. Bayram, L. Nguyen-Thê, R. McClintock, and M. Razeghi, "Tunability of
intersubband absorption from 4.5 to 5.3 µm in a GaN/Al 0.2Ga0.8N superlattices grown by
metalorganic chemical vapor deposition," Applied Physics Letters Vol. 95, No. 13, p. 131109
(September 28, 2009) [http://link.aip.org/link/?APL/95/131109].
156. P.Y. Delaunay and M. Razeghi, "Noise analysis in type-II InAs/GaSb focal plane arrays," Journal of
Applied Physics Vol. 106, Issue 6, p. 063110 (September 15,
2009)[http://link.aip.org/link/?JAPIAU/106/063110/1].
157. T. Yamanaka, B. Movaghar, S. Tsao, S. Kuboya, A. Myzaferi and M. Razeghi, "Gain-length scaling in
quantum dot/quantum well infrared photodetectors," Virtual Journal of Nanoscale Science &
Technology (September 14, 2009) [http://www.vjnano.org].
158. Can Bayram; Manijeh Razeghi , "Nitrides push performance of UV photodiodes," Laser Focus
World. 45(9) pp. 47-51 (2009) (September 1, 2009)[http://www.laserfocusworld.com/articles/print/volume45/issue-9/features/ultraviolet-detectors-nitrides-push-performance-of-uv-photodiodes.html].
159. T. Yamanaka, B. Movaghar, S. Tsao, S. Kuboya, A. Myzaferi and M. Razeghi, "Gain-length scaling in
quantum dot/quantum well infrared photodetectors," Applied Physics LettersVol. 95, No. 9 (August
31, 2009) [http://link.aip.org/link/?APL/95/093502].
160. M. Razeghi, B.M. Nguyen, P.Y. Delaunay, E.K. Huang, S. Abdollahi Pour, P. Manurkar, and S.
Bogdanov, "State-of-the-art Type II Antimonide-based superlattice photodiodes for infrared
detection and imaging," SPIE Proceedings Nanophotonics and Macrophotonics for Space Environments
II, San Diego, CA, Vol. 7467, p. 74670T-1 (August 5,
2009)[http://spiedigitallibrary.org/proceedings/resource/2/psisdg/7467/1/74670T_1].
161. J.S. Yu, H.K. Lee, S. Slivken, and M. Razeghi, "Thermal characteristics and analysis of quantum
cascade lasers for biochemical sensing applications," SPIE Proceedings Biosensing II, San Diego, CA
(August 2-6, 2009), Vol. 7397, p. 739705-1 (August 2, 2009) [http://dx.doi.org/10.1117/12.825594 ].
162. C. Bayram and M. Razeghi, "Stranski-Krastanov growth of InGaN quantum dots emitting in green
spectra," Applied Physics A: Materials Science and Processing Vol. 96, No. 2, p. 403-408 (August 1,
2009) [http://dx.doi.org/10.1007/s00339-009-5186-2].
163. Y. Bai, B. Gokden, S.R. Darvish, S. Slivken, and M. Razeghi, "Photonic crystal distributed feedback
quantum cascade lasers with 12 W output power," Applied Physics Letters Vol. 95, No. 3 (July 20,
2009) [http://link.aip.org/link/?APL/95/031105].
164. B.M. Nguyen, D. Hoffman, E.K. Huang, S. Bogdanov, P.Y. Delaunay, M. Razeghi and M.Z.
Tidrow, "Demonstration of mid-infrared type-II InAs/GaSb superlattice photodiodes grown on GaAs
substrate," Applied Physics Letters Vol. 94, No. 22 (June 8,
2009) [http://link.aip.org/link/?APPLAB/94/223506/1].
165. M. Razeghi, "High-Performance InP-Based Mid-IR Quantum Cascade Lasers," IEEE Journal of
Selected Topics in Quantum Electronics Vol. 15, No. 3, May-June 2009, p. 941-951. (June 5,
2009) [http://dx.doi.org/10.1109/JSTQE.2008.2006764].
166. M. Razeghi, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E.K. Huang, M.Z. Tidrow, and V.
Nathan, "Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane
Arrays at the Center for Quantum Devices," IEEE Proceedings Vol. 97, No. 6, p. 1056-1066 (June 1,
2009) [http://dx.doi.org/10.1109/JPROC.2009.2017108].
167. V.E. Sandana, D.J. Rogers, F. Hosseini Teherani, R. McClintock, C. Bayram, M. Razeghi, H-J Drouhin,
M.C. Clochard, V. Sallett, G. Garry, and F. Falyouni, "Comparison of ZnO nanostructures grown using
pulsed laser deposition, metal organic chemical vapor deposition, and physical vapor
transport," Journal of Vacuum Science and Technology B Vol. 27, No. 3, May/June, p. 1678-1683 (May
29, 2009) [http://dx.doi.org/10.1116/1.3137990].
168. C. Bayram, D. Rogers, F. H. Teherani, and M. Razeghi, "Fabrication and characterization of novel
hybrid green light emitting didoes based on substituting n-type ZnO for n-type GaN in an inverted pn junction," Journal of Vacuum Science and Technology B Vol. 27, No. 3, May/June, p. 1784-1788 (May
29, 2009) [http://dx.doi.org/10.1116/1.3116590].
169. D.J. Rogers, F. Hosseini Teherani, T. Moudakir, S. Gautier, F. Jomard, M. Molinari, M. Troyon, D.
McGrouther, J.N. Chapman, M. Razeghi and A. Ougazzaden, "Microstructural compositional, and
optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO
epilayers," Journal of Vacuum Science and Technology B Vol. 27, No. 3, May/June, p. 1655-1657 (May
29, 2009) [http://dx.doi.org/10.1116/1.3137967].
170. M. Razeghi and C. Bayram, "Material and design engineering of (Al)GaN for high-performance
avalanche photodiodes and intersubband applications," SPIE ProceedingsDresden, Germany (May 4-6,
2009), Vol. 7366, p. 73661F-1 (May 20, 2009) [http://dx.doi.org/10.1117/12.819390].
171. M. Razeghi and R. McClintock, "A Review of III-Nitride Research at the Center for Quantum
Devices," Journal of Crystal Growth Vol. 311, No. 10 (May 1,
2009)[http://dx.doi.org/10.1016/j.jcrysgro.2009.01.097 ].
172. B.M. Nguyen, D. Hoffman, E.K. Huang, P.Y. Delaunay, and M. Razeghi, "High performance antimony
based type-II superlattice photodiodes on GaAs substrates," SPIE Porceedings Vol. 7298, Orlando, FL
2009, p. 72981T (April 13, 2009) [http://dx.doi.org/10.1117/12.818373].
173. P.Y. Delaunay, B.M. Nguyen and M. Razeghi, "Background limited performance of long wavelength
infrared focal plane arrays fabricated from type-II InAs/GaSb M-structure superlattice," SPIE
Porceedings Vol. 7298, Orlando, FL 2009, p. 72981Q (April 13,
2009) [http://dx.doi.org/10.1117/12.818271].
174. C. Bayram, N. Pere-Laperne, R. McClintock, B. Fain and M. Razeghi, "Pulsed metal-organic chemical
vapor deposition of high quality AlN/GaN superlattices for near-infrared intersubband
transitions," Applied Physics Letters Vol. 94, No. 12, p. 121902-1 (March 23,
2009) [http://link.aip.org/link/?APL/94/121902].
175. D. J. Rogers ; F. Hosseini Teherani ; C. Sartel ; V. Sallet ; F. Jomard ; P. Galtier ; M. Razeghi
, "Characterization of ZnO thin films grown on c-sapphire by pulsed laser deposition as templates
for regrowth of zno by metal organic chemical vapor deposition," Proc. SPIE 7217 Zinc Oxide
Materials and Devices IV, 72170F (February 17, 2009) (February 17,
2009)[http://dx.doi.org/10.1117/12.817032].
176. D.J. Rogers; V.E. Sandana; F. Hosseini Teherani; M. Razeghi; H.-J. Drouhin, "Fabrication of
nanostructured heterojunction LEDs using self-forming Moth-Eye Arrays of n-ZnO Nanocones
Grown on p-Si (111) by PLD," Proc. SPIE 7217 Zinc Oxide Materials and Devices IV, 721708 (February
17, 2009) (February 17, 2009)[http://dx.doi.org/10.1117/12.817030].
177. E.K. Huang, D. Hoffman, B.M. Nguyen, P.Y. Delaunay and M. Razeghi, "Surface leakage reduction in
narrow band gap type-II antimonide-based superlattice photodiodes,"Applied Physics Letters Vol. 94,
No. 5, p. 053506-1 (February 2, 2009) [http://link.aip.org/link/?APL/94/053506].
178. H.K. Lee, K.S. Chung, J.S. Yu and M. Razeghi, "Thermal analysis of buried heterostructure quantum
cascade lasers for long-wavelength infrared emission using 2D anisotropic heat-dissipation
model," Physica Status Solidi (a) Vol. 206, p. 356-362 (February 1,
2009) [http://dx.doi.org/10.1002/pssa.200824314 ].
179. P.Y. Delaunay, B.M. Nguyen, D. Hoffman, E.K. Huang, and M. Razeghi, "Background limited
performance of long wavelength infrared focal plane arrays fabricated from M-structure InAs-GaSb
superlattices," IEEE Journal of Quantum Electronics Vol. 45, No. 2, p. 157-162. (February 1,
2009) [http://dx.doi.org/10.1109/JQE.2008.916701].
180. R. McClintock, J.L. Pau, C. Bayram, B. Fain, P. Giedratis, M. Razeghi and M. Ulmer, "III-Nitride
avalanche photodiodes," SPIE Proceedings San Jose, CA Volume 7222-0U (January 26,
2009) [http://dx.doi.org/10.1117/12.809704].
181. Y. Bai, B. Gokden, S. Slivken, S.R. Darvish, S.A. Pour, and M. Razeghi, "Mid-infrared quantum
cascade lasers with high wall plug efficiency," SPIE Proceedings San Jose, CA Volume 7222-0O
(January 26, 2009) [http://dx.doi.org/10.1117/12.810281].
182. C. Bayram, B. Fain, N. Pere-Laperne, R. McClintock and M. Razeghi, "Pulsed metalorganic chemical
vapor deposition of high quality AlN/GaN superlattices for intersubband transitions," SPIE
Proceedings San Jose, CA Volume 7222-12 (January 26, 2009) [http://dx.doi.org/10.1117/12.809829].
183. J.L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi, "GaN-based nanostructured
photodetectors," SPIE Proceedings San Jose, CA Volume 7222-14 (January 26,
2009)[http://dx.doi.org/10.1117/12.814983].
184. D. Hoffman, B.M. Nguyen, E.K. Huang, P.Y. Delaunay, S. Bogdanov, P. Manukar, M. Razeghi, and V.
Nathan, "The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing
the M-structure barrier," SPIE Proceedings San Jose, CA Volume 7222-15 (January 26,
2009) [http://dx.doi.org/10.1117/12.810033 ].
185. P.Y. Delaunay, B.M. Nguyen, D. Hoffman, E.K. Huang, P. Manurkar, S. Bogdanov and M.
Razeghi, "Background limited performance of long wavelength infrared focal plane arrays
fabricated from M-structure InAs/GaSb superlattices," SPIE Proceedings San Jose, CA Volume 72220W (January 26, 2009) [http://dx.doi.org/10.1117/12.810032].
186. E.K. Huang, B.M. Nguyen, D. Hoffman, P.Y. Delaunay and M. Razeghi, "Inductively coupled plasma
etching and processing techniques for type-II InAs/GaSb superlattices infrared detectors toward
high fill factor focal plane arrays," SPIE Proceedings San Jose, CA Volume 7222-0Z (January 26,
2009) [http://dx.doi.org/10.1117/12.810030].
187. C. Bayram, F. Hosseini Teherani, D.J. Rogers and M. Razeghi, "Hybrid green LEDs based on nZnO/(InGaN/GaN) multi-quantum-wells/p-GaN," SPIE Proceedings San Jose, CA Volume 7217-0P
(January 26, 2009) [http://dx.doi.org/10.1117/12.817033].
188. M. Razeghi, "High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on
InP/GaInAs/InAlAs material system," SPIE Proceedings San Jose, CA Volume 7230-11 (January 26,
2009) [http://dx.doi.org/10.1117/12.813923].
189. S. Tsao, T. Yamanaka, S. Abdollahi Pour, I-K Park, B. Movaghar and M. Razeghi, "Quantum dot in a
well infrared photodetectors for high operating temperature focal plane arrays," SPIE
Proceedings San Jose, CA Volume 7234-0V (January 25, 2009) [http://dx.doi.org/10.1117/12.809251].
190. J.L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi, "GaN nanostructured p-i-n
photodiodes," Applied Physics Letters Vol. 93, No. 22, p. 221104-1 (December 1,
2008)[http://link.aip.org/link/?APL/93/221104].
191. C. Bayram, J.L. Pau, R. McClintock and M. Razeghi, "Comprehensive study of blue and green multiquantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth
GaN," Applied Physics B: Lasers and Optics Vol. 95, p. 307-314 (November 29,
2008) [http://dx.doi.org/10.1007/s00340-008-3321-y].
192. C. Bayram, J.L. Pau, R. McClintock, M. Razeghi, M.P. Ulmer, and D. Silversmith, "High quantum
efficiency back-illuminated GaN avalanche photodiodes," Applied Physics LettersVol. 93, No. 21, p.
211107-1 (November 24, 2008) [http://link.aip.org/link/?APL/93/211107].
193. J.S. Yu, S. Slivken, A. Evans, and M. Razeghi, "High-performance, continuous-wave quantum-cascade
lasers operating up to 85° C at λ ~ 8.8 μm ," Applied Physics A: Materials Science & Processing Vo. 93,
No. 2, p. 405-408 (November 1, 2008) [http://dx.doi.org/10.1007/s00339-008-4783-9].
194. B.M. Nguyen, D. Hoffman, P.Y. Delaunay, E.K. Huang, M. Razeghi, and J. Pellegrino, "Band edge
tunability of M-structure for heterojunction design in Sb based Type-II superlattice
photodiodes," Applied Physics Letters Vol. 93, No. 16, p. 163502-1 (October 20,
2008) [http://link.aip.org/link/?APL/93/163502].
195. C. Bayram, J.L. Pau, R. McClintock and M. Razeghi, "Delta-doping optimization for high qualityp-type
GaN," Journal of Applied Physics Vol. 104, No. 8 (October 15,
2008)[http://link.aip.org/link/?JAPIAU/104/083512/1].
196. B. Movaghar, S. Tsao, S. Abdollahi Pour, T. Yamanaka, and M. Razeghi, "Gain and recombination
dynamics in photodetectors made with quantum nanostructures: the quantum dot in a well and the
quantum well," Virtual Journal of Nanoscale Science & Technology Vol. 18, No. 14 (October 6,
2008) [http://www.vjnano.org].
197. B.M. Nguyen, D. Hoffman, E.K. Huang, P.Y. Delaunay, and M. Razeghi, "Background limited long
wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K," Applied Physics
Letters Vol. 93, No. 12, p. 123502-1 (September 22, 2008) [http://link.aip.org/link/?APL/93/123502].
198. M. Razeghi, "Quantum Devices Based on Modern Band Structure Engineering and Epitaxial
Technology," Modern Physics Letters B Vol. 22, No. 24, p. 2343-2371 (September 20,
2008) [http://dx.doi.org/10.1142/S0217984908016893].
199. B. Movaghar, S. Tsao, S. Abdollahi Pour, T. Yamanaka, and M. Razeghi, "Gain and recombination
dynamics in photodetectors made with quantum nanostructures: The quantum dot in a well and the
quantum well," Physical Review B Vol. 78, No. 11 (September 15,
2008) [http://link.aps.org/abstract/PRB/v78/e115320].
200. B.M. Nguyen, D. Hoffman, P.Y. Delaunay, E.K. Huang and M. Razeghi, "Very high performance LWIR
and VLWIR type-II InAs/GaSb superlattice photodiodes with M-structure barrier," SPIE
Proceedings Vol. 7082, San Diego, CA 2008, p. 708205 (September 3,
2008) [http://dx.doi.org/10.1117/12.794210].
201. C. Bayram, F. Hosseini Teherani, D.J. Rogers and M. Razeghi, "A hybrid green light-emitting diode
comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN," Applied Physics Letters Vol. 93, No.
8, p. 081111-1 (August 25, 2008) [http://link.aip.org/link/?APL/93/081111].
202. M. Razeghi, B.M. Nguyen, D. Hoffman, P.Y. Delaunay, E.K. Huang, M.Z. Tidrow and V.
Nathan, "Development of material quality and structural design for high performance type-II
InAs/GaSb superlattice photodiodes and focal plane arrays," SPIE Porceedings Vol. 7082, San Diego,
CA 2008, p. 708204 (August 11, 2008) [http://dx.doi.org/10.1117/12.794218].
203. J.S. Yu, S. Slivken, A. Evans and M. Razeghi, "High-performance, continuous-wave operation of λ ~
4.6 μm quantum-cascade lasers above room temperature ," IEEE Journal of Quantum Electronics Vol.
44, No. 8, p. 747-754 (August 1, 2008) [http://dx.doi.org/10.1109/JQE.2008.924434].
204. D. Hoffman, B.M. Nguyen, E.K. Huang, P.Y. Delaunay, M. Razeghi, M.Z. Tidrow and J. Pellegrino, "The
effect of doping the M-barrier in very long-wave type-II InAs/GaSb heterodiodes," Applied Physics
Letters Vol. 93, No. 3, p. 031107-1 (July 21, 2008) [http://link.aip.org/link/?APL/93/031107].
205. Y. Bai, S. Slivken, S.R. Darvish, and M. Razeghi, "Room temperature continuous wave operation of
quantum cascade lasers with 12.5% wall plug efficiency," Applied Physics Letters Vol. 93, No. 2, p.
021103-1 (July 14, 2008) [http://link.aip.org/link/?APL/93/021103].
206. D.J. Rogers, D.C. Look, F.H. Teherani, K. Minder, M. Razeghi, A. Largeteau, G. Demazeau, J. Morrod,
K.A. Prior, A. Lusson, and S. Hassani, "Investigations of ZnO thin films grown on c-Al(2)O(3) by
pulsed laser deposition in N(2) + O(2) ambient," Physica Status Solidi (c) Vol. 5, No. 9, p. 3084-3087
(July 1, 2008) [http://dx.doi.org/10.1002/pssc.200779315].
207. C. Bayram, J.L. Pau, R. McClintock and M. Razeghi, "Performance enhancement of GaN ultraviolet
avalanche photodiodes with p-type delta-doping," Applied Physics Letters Vol. 92, No. 24, p. 241103-1
(June 16, 2008) [http://link.aip.org/link/?apl/92/241103].
208. S. Tsao, H. Lim, H. Seo, W. Zhang and M. Razeghi, "InP-based quantum-dot infrared photodetectors
with high quantum efficiency and high temperature imaging," IEEE Sensors Journal Vol. 8, No. 6, p.
936-941 (June 1, 2008) [http://dx.doi.org/10.1109/JSEN.2008.923940].
209. Manijeh Razeghi, "New frontiers in InP based quantum devices," Indium Phosphide and Related
Materials 2008. IPRM 2008. 20th International Conference on, pp.1,4, (2008) (May 29,
2008) [http://dx.doi.org/10.1109/ICIPRM.2008.4703051].
210. P.Y. Delaunay, B.M. Nguyen, D. Hoffman and M. Razeghi, "High-Performance Focal Plane Arrays
Based on InAs-GaSb Superlattices with a 10-micron Cutoff Wavelegth," IEEE Journal of Quantum
Electronics Vol. 44, No. 5, p. 462-467 (May 1, 2008) [http://dx.doi.org/10.1109/JQE.2008.916701].
211. J.L. Pau, R. McClintock, C. Bayram, K. Minder, D. Silversmith and M. Razeghi, "High Optical Response
in Forward Biased (In,Ga)N-GaN Multiquantum-Well Diodes Under Barrier Illumination," IEEE
Journal of Quantum Electronics Vol. 44, No. 4, p. 346-353. (April 1,
2008) [http://dx.doi.org/10.1109/JQE.2007.914766].
212. P.Y. Delaunay, B.M. Nguyen, D. Hoffman, A. Hood, E.K. Huang, M. Razeghi, and M.Z. Tidrow, "High
quantum efficiency two color type-II InAs/GaSb n-i-p-p-i-n photodiodes,"Applied Physics Letters Vol.
92, No. 11, p. 111112-1 (March 17, 2008) [http://link.aip.org/link/?APL/92/111112/].
213. M. Razeghi, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E.K. Huang, and M.Z. Tidrow, "Recent advances
in LWIR type-II InAs/GaSb superlattice photodetectors and focal plane arrays at the Center for
Quantum Devices," SPIE Porceedings Vol. 6940, Orlando, FL 2008, p. 694009 (March 17,
2008) [http://dx.doi.org/10.1117/12.782854].
214. Y. Bai, S.R. Darvish, S. Slivken, W. Zhang, A. Evans, J. Nguyen and M. Razeghi, "Room temperature
continuous wave operation of quantum cascade lasers with watt-level optical power," Applied Physics
Letters Vol. 92, No. 10, p. 101105-1 (March 10, 2008) [http://link.aip.org/link/?APL/92/101105].
215. J.L. Pau, C. Bayram, R. McClintock, M. Razeghi and D. Silversmith, "Back-illuminated separate
absorption and multiplication GaN avalanche photodiodes," Applied Physics LettersVol. 92, No. 10, p.
101120-1 (March 10, 2008) [ http://link.aip.org/link/?APL/92/101120].
216. V.E. Sandana, D.J. Rogers, F.H. Teherani, R. McClintock, M. Razeghi, H.J. Drouhin, M.C. Clochard, V.
Sallett, G. Garry and F. Fayoud, "MOCVD Growth of ZnO Nanostructures Using Au Droplets as
Catalysts," SPIE Conference January 20-25, 2008, San Jose, CA Proceedings – Zinc Oxide Materials and
Devices III, Vol. 6895, p. 68950Z-1-6. (February 1, 2008)[http://dx.doi.org/10.1117/12.775632].
217. A. Hood, A. Evans and M. Razeghi, "Type-II Superlattices and Quantum Cascade Lasers for MWIR
and LWIR Free-Space Communications," SPIE Conference January 20-25, 2008, San Jose, CA
Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 690005-1-9. (February 1,
2008) [http://dx.doi.org/10.1117/12.776376].
218. Y. Bai, P. Sung, S.R. Darvish, W. Zhang, A. Evans, S. Slivken, and M. Razeghi, "Electrically pumped
photonic crystal distributed feedback quantum cascade lasers," SPIE Conference January 20-25, 2008,
San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000A-1-8.
(February 1, 2008)[http://dx.doi.org/10.1117/12.776272].
219. S. Slivken, A. Evans, J. Nguyen, Y. Bai, P. Sung, S.R. Darvish, W. Zhang and M. Razeghi, "Overview of
Quantum Cascade Laser Research at the Center for Quantum Devices,"SPIE Conference January 20-
25, 2008, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p.
69000B-1-8. (February 1, 2008)[http://dx.doi.org/10.1117/12.767315].
220. P.Y. Delaunay and M. Razeghi, "High performance focal plane array based on type-II InAs/GaSb
superlattice heterostructures," SPIE Conference January 20-25, 2008, San Jose, CA Proceedings –
Quantum Sensing and Nanophotonic Devices V, Vol. 6900, p. 69000M-1-10. (February 1,
2008) [http://dx.doi.org/10.1117/12.776257].
221. R. McClintock, J.L. Pau, K. Minder, C. Bayram and M. Razeghi, "III-Nitride photon counting avalanche
photodiodes," SPIE Conference January 20-25, 2008, San Jose, CA Proceedings – Quantum Sensing and
Nanophotonic Devices V, Vol. 6900, p. 69000N-1-11. (February 1,
2008) [http://dx.doi.org/10.1117/12.776265].
222. P.Y. Delaunay, B.M. Nguyen, D. Hoffman and M. Razeghi, "Substrate removal for high quantum
efficiency back side illuminated type-II InAs/GaSb photodetectors," Applied Physics Letters Vol. 91,
No. 23, p. 231106 (December 3, 2007) [ http://link.aip.org/link/?APL/91/231106].
223. Melville P. Ulmer; Ryan M. McClintock; Jose L. Pau; Manijeh Razeghi, "Advances in APDs for UV
astronomy," Proc. SPIE 6686 UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XV,
668605 (September 13, 2007) (November 13, 2007) [http://dx.doi.org/10.1117/12.739919].
224. M. Razeghi and B.M. Nguyen, "Research activity on Type-II InAs/GaSb superlattice for LWIR
detection and imaging at the Center for Quantum Devices," American Institute of Physics Conference
Proceedings Vol. 949 Issue 1, p. 35-42, 6th International Workshop on Information Optics (WIO'07),
Reykjavik, Iceland, June 25-30, 2007 (October 24, 2007)[http://link.aip.org/link/?APCPCS/949/35/1].
225. M. Razeghi; H. Lim; S. Tsao; H. Seo; W. Zhang, "Thermal imaging based on high-performance
InAs/InP quantum-dot infrared photodetector operating at high temperature,"Conference
Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS.15-16:[4382251] (2007). (October
21, 2007) [http://dx.doi.org/10.1109/LEOS.2007.4382251].
226. B.M. Nguyen, D. Hoffman, P.Y. Delaunay, and M. Razeghi, "Dark current suppression in Type-II
InAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier," Applied
Physics Letters Vol. 91, No. 16, p. 163511-1 (October 15, 2007) [http://link.aip.org/link/?APL/91/163511].
227. D. Hoffman, B.M. Nguyen, P.Y. Delaunay, A. Hood, M. Razeghi and J. Pellegrino, "Beryllium
compensation doping of InAs/GaSb infrared superlattice photodiodes," Applied Physics Letters Vol.
91, No. 14, p. 143507-1 (October 1, 2007) [http://link.aip.org/link/?APL/91/143507].
228. Y. Bai, S.R. Darvish, S. Slivken, P. Sung, J. Nguyen, A. Evans, W. Zhang, and M. Razeghi, "Electrically
pumped photonic crystal distributed feedback quantum cascade lasers,"Applied Physics Letters Vol.
91, No. 14, p. 141123-1 (October 1, 2007) [http://link.aip.org/link/?APL/91/141123].
229. J.M. Jung, C.R. Kim, H. Ryu, M. Razeghi and W.G. Jung, "ZnO 3D flower-like nanostructure
synthesized on GaN epitaxial layer by simple route hydrothermal process," Journal of Alloys and
Compounds (September 15, 2007) [http://dx.doi.org/10.1016/j.jallcom.2007.09.077].
230. B.M. Nguyen, D. Hoffman, P.Y. Delaunay, M. Razeghi and V. Nathan, "Polarity inversion of Type-II
InAs/GaSb superlattice photodiodes," Applied Physics Letters Vol. 91, No. 10, p. 103503-1 (September
3, 2007) [http://dx.doi.org/10.1063/1.2779855].
231. P.Y. Delaunay, A. Hood, B.M. Nguyen, D. Hoffman, Y. Wei, and M. Razeghi, "Passivation of type-II
InAs/GaSb double heterostructure," Applied Physics Letters Vol. 91, No. 9, p. 091112-1 (August 27,
2007) [http://link.aip.org/link/?APL/91/091112].
232. A. Evans, S.R. Darvish, S. Slivken, J. Nguyen, Y. Bai and M. Razeghi, "Buried heterostructure
quantum cascade lasers with high continuous-wave wall plug efficiency," Applied Physics Letters Vol.
91, No. 7, p. 071101-1 (August 13, 2007) [http://link.aip.org/link/?APL/91/071101].
233. K. Minder, J.L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi and D. Silversmith, "Scaling in
back-illuminated GaN avalanche photodiodes," Applied Physics Letters Vol. 91, No. 7, p. 073513-1
(August 13, 2007) [http://link.aip.org/link/?APL/091/073513].
234. D.J. Rogers, F. Hosseini Teherani, A. Ougazzaden, S. Gautier, L. Divay, A. Lusson, O. Durand, F.
Wyczisk, G. Garry, T. Monteiro, M.R. Correira, M. Peres, A. Neves, D. McGrouther, J.N. Chapman, and
M. Razeghi, "Use of ZnO thin films as sacrifical templates for metal organic vapor phase epitaxy and
chemical lift-off of GaN," Applied Physics Letters Vol. 91, No. 7, p. 071120-1 (August 13, 2007) [
http://link.aip.org/link/?APL/091/071120].
235. J. L. Pau, R. McClintock, K. Minder, C. Bayram, P. Kung, M. Razeghi, E. Muñoz, and D.
Silversmith, "Geiger-mode operation of back-illuminated GaN avalanche photodiodes ,"Applied
Physics Letters Vol. 91, No. 04, p. 041104 -1 (July 23, 2007) [http://link.aip.org/link/?APL/091/041104].
236. M. Razeghi; A. Evans; J. Nguyen; Y. Bai; S. Slivken; S.R. Darvish; K. Mi, "High-power mid- and farwavelength infrared lasers for free space communication," Proc. SPIE 6593Photonic Materials,
Devices, and Applications II, 65931V (June 12, 2007) (June 12,
2007) [http://dx.doi.org/10.1117/12.718784].
237. B.M. Nguyen, D. Hoffman, Y. Wei, P.Y. Delaunay, A. Hood and M. Razeghi, "Very high quantum
efficiency in type-II InAs/GaSb superlattice photodiode with cutoff of 12 µm ,"Applied Physics
Letters Vol. 90, No. 23, p. 231108-1 (June 4, 2007) [http://link.aip.org/link/?APL/90/231108].
238. Andrew Hood, Pierre-Yves Delaunay, Darin Hoffman, Binh-Minh Nguyen, Yajun Wei, Manijeh Razeghi,
and Vaidya Nathan, "Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb
superlattice photodiodes with polyimide surface passivation," Applied Physics Letters 90 233513 (June
4, 2007) [http://link.aip.org/link/?APL/90/233513].
239. S. Tsao, H. Lim, W. Zhang, and M. Razeghi, "High operating temperature 320 x 256 middlewavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot
infrared photodetector," Virtual Journal of Nanoscale Science and Technology (May 28,
2007) [http://scitation.aip.org/dbt/dbt.jsp?KEY=VIRT01&Volume=15&Issue=21#MAJOR7].
240. S. Tsao, H. Lim, W. Zhang, and M. Razeghi, "High operating temperature 320 x 256 middlewavelength infrared focal plane array imaging based on an InAs/InGaAs/InAlAs/InP quantum dot
infrared photodetector," Applied Physics Letters Vol. 90, No. 20, p. 201109 (May 14, 2007) [
http://link.aip.org/link/?APL/090/201109].
241. M. Razeghi; A. Evans; Y. Bai; J. Nguyen; S. Slivken; S.R. Darvish; K. Mi, "Current status of high
performance quantum cascade lasers at the center for quantum devices,"Conference Proceedings International Conference on Indium Phosphide and Related Materials. 588-593:[4266015] (2007) (May
14, 2007)[http://dx.doi.org/10.1109/ICIPRM.2007.381258].
242. Jagmohan Bajaj; Gerry Sullivan; Don Lee; Ed Aifer; Manijeh Razeghi, "Comparison of type-II
superlattice and HgCdTe infrared detector technologies," Proc. SPIE 6542 Infrared Technology and
Applications XXXIII, 65420B (May 14, 2007) (May 14, 2007) [http://dx.doi.org/10.1117/12.723849].
243. Ho-Chul Lim; Stanley Tsao; Wei Zhang; Manijen Razeghi, "Self-assembled semiconductor quantum
dot infrared photodetector operating at room temperature and focal plane array," Proc. SPIE
6542 Infrared Technology and Applications XXXIII, 65420R (May 14, 2007) (May 14,
2007) [http://dx.doi.org/10.1117/12.719670].
244. Vaidya Nathan; Manijeh Razeghi, "Type II superlattice infrared detectors and focal plane
arrays," Proc. SPIE 6542 Infrared Technology and Applications XXXIII, 654209 (May 14, 2007) (May
14, 2007) [http://dx.doi.org/10.1117/12.723730].
245. S. Slivken, A. Evans, W. Zhang and M. Razeghi, "High-power, continuous-operation intersubband
laser for wavelengths greater than 10 micron," Applied Physics Letters Vol. 90, No. 15, p. 151115-1
(April 9, 2007) [http://link.aip.org/link/?APL/90/151115].
246. P.Y. Delaunay, B.M. Nguyen, D. Hoffman, and M. Razeghi, "320x256 infrared focal plane array based
on type-II InAs/GaSb superlattice with a 12 μm cutoff wavelength," SPIE Porceedings Vol. 6542,
Orlando, FL 2007, p. 654204 (April 9, 2007) [http://dx.doi.org/10.1117/12.723832].
247. R. McClintock, J.L. Pau, K. Minder, C. Bayram, P. Kung and M. Razeghi, "Hole-initiated multiplication
in back-illuminated GaN avalanche photodiodes," Applied Physics LettersVol. 90 No. 14, p. 141112-1
(April 2, 2007) [http://link.aip.org/link/?APL/90/141112].
248. D. Rogers, F.H. Teherani, P. Kung, K. Minder, and M. Razeghi, "Materials characterization of nZnO/p-GaN:Mg/c-Al(2)O(3) UV LEDs grown by pulsed laser deposition and metal-organic chemical
vapor deposition," Superlattices and Microstructures (April 1,
2007) [http://dx.doi.org/10.1016/j.spmi.2007.04.075 ].
249. H. Lim, S. Tsao, W. Zhang, and M. Razeghi, "High-performance InAs quantum-dot infrared
photodetectors grown on InP substrate operating at room temperature," Applied Physics Letters Vol.
90, No. 13, p. 131112-1 (March 26, 2007) [http://link.aip.org/link/?APL/90/131112].
250. Allan J. Evans; Manijeh Razeghi, "Quantum cascade laser: A tool for trace chemical
detection," American Filtration and Separations Society - 20th Annual Conference and Exposition of the
American Filtration and Separations Society 2:914-923 (2007) (March 26, 2007).
251. K. Minder, F.H. Teherani, D. Rogers, C. Bayram, R. McClintock, P. Kung, and M. Razeghi, "Etching of
ZnO Towards the Development of ZnO Homostructure LEDs," SPIE Conference January 25-29, 2007,
San Jose, CA Proceedings – Zinc Oxide Materials and Devices II, Vol. 6474, p. 64740Q-1-6 (January 29,
2007) [http://Link.aip.org/link/?PSISDG/6474/64740Q/1].
252. M. Razeghi, A. Hood and A. Evans, "Type-II InAs/GaSb Superlattice Focal Plane Arrays for HighPerformance Third Generation Infrared Imaging and Free-Space Communication," SPIE
Conference January 25-29, 2007, San Jose, CA Proceedings – Optoelectronic Integrated Circuits IX, Vol.
6476, p. 64760Q-1-9 (January 29, 2007)[http://dx.doi.org/10.1117/12.712783].
253. P. Kung, R. McClintock, J. Pau Vizcaino, K. Minder, C. Bayram and M. Razeghi, "III-Nitride Avalanche
Photodiodes," SPIE Conference January 25-29, 2007, San Jose, CA Proceedings – Quantum Sensing and
Nanophotonic Devices IV, Vol. 6479, p. 64791J-1-12 (January 29,
2007) [http://link.aip.org/link/?PSISDG/6479/64791J/1].
254. J. Nguyen and M. Razeghi, "Techniques for High-Quality SiO2 Films," SPIE Conference January 25-29,
2007, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic Devices IV, Vol. 6479, p. 64791K1-8 (January 29, 2007) [http://dx.doi.org/10.1117/12.716608].
255. B-M. Nguyen, M. Razeghi, V. Nathan, and G.J. Brown, "Type-II ‘M’ Structure Photodiodes: An
Alternative Material Design for Mid-Wave to Long Wavelength Infrared Regimes," SPIE
Conference January 25-29, 2007, San Jose, CA Proceedings – Quantum Sensing and Nanophotonic
Devices IV, Vol. 6479, p. 64790S-1-10 (January 29,
2007)[http://link.aip.org/link/?PSISDG/6479/64790S/1].
256. S.R. Darvish, W. Zhang, A. Evans, J.S. Yu, S. Slivken, and M. Razeghi, "High-power continuous-wave
operation of distributed-feedback quantum-cascade lasers at λ ~ 7.8 µm,"Applied Physics Letters 89
(25) (December 18, 2006) [http://link.aip.org/link/?APPLAB/89/251119/1].
257. E.C.F. da Silva, D. Hoffman, A. Hood, B. Nguyen, P.Y. Delaunay and M. Razeghi, "Influence of
Residual Impurity Background on the Non-radiative Recombination Processes in High Purity
InAs/GaSb superlattice Photodiodes," Applied Physics Letters 89 (24) (December 11,
2006) [http://dx.doi.org/10.1063/1.2405877].
258. H. Lim, B. Movaghar, S. Tsao, M. Taguchi, W. Zhang, A.A. Quivy, and M. Razeghi, "Gain and
recombination dynamics of quantum-dot infrared photodetecto," Virtual Journal of Nanoscale Science
& Technology (December 4, 2006) [http://www.vjnano.org].
259. H. Lim, B. Movaghar, S. Tsao, M. Taguchi, W. Zhang, A.A. Quivy, and M. Razeghi, "Gain and
recombination dynamics of quantum-dot infrared photodetectors," Physical Review B74 (20)
(November 15, 2006) [http://link.aps.org/doi/10.1103/PhysRevB.74.205321].
260. S. Slivken and M. Razeghi, "Recent advances in high power mid- and far-wavelength infrared lasers
for free space communication," SPIE Optics East Conference October 1-4, 2006, Boston, MA
Proceedings – Active and Passive Optical Components for Communications VI, Vol. 6389, p. 63890S-1
(October 4, 2006) [http://link.aip.org/link/?PSISDG/6389/63890S/1].
261. M. Razeghi, P.Y. Delaunay, B.M. Nguyen, A. Hood, D. Hoffman, R. McClintock, Y. Wei, E. Michel, V.
Nathan and M. Tidrow, "First Demonstration of ~ 10 microns FPAs in InAs/GaSb SLS," IEEE LEOS
Newsletter 20 (5) (October 1,
2006) [http://oai.dtic.mil/oai/oai?verb=getRecord&metadataPrefix=html&identifier=ADA464072].
262. J. Nguyen, J.S. Yu, A. Evans, S. Slivken and M. Razeghi, "Optical Coatings by ion-beam sputtering
deposition for long-wave infrared quantum cascade lasers," Applied Physics Letters 89 (11) (September
11, 2006) [http://link.aip.org/link/?APPLAB/89/111113/1].
263. A. Hood, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E. Michel and M. Razeghi, "High differential
resistance type-II InAs/GaSb superlattice photodiodes for the long-wavelength infrared," Applied
Physics Letters 89 (9) (August 28, 2006) [http://link.aip.org/link/?APPLAB/89/093506/1].
264. M. Razeghi, H. Lim, S. Tsao, M. Taguchi, W. Zhang and A.A. Quivy, "High performance midwavelength quantum dot infrared photodetectors for focal plane arrays," SPIE Conference San Diego,
CA, Vol. 6297, pp. 62970C (August 13, 2006) [http://dx.doi.org/10.1117/12.682091].
265. A. Evans and M. Razeghi, "Reliability of strain-balanced Ga0.331In0.669As/Al0.659In0.341As/InP quantumcascade lasers under continuous-wave room-temperature operation,"Applied Physics Letters 88 (26)
(June 26, 2006) [http://link.aip.org/link/?APPLAB/88/261106/1].
266. J.S. Yu, A. Evans, S. Slivken, S.R. Darvish and M. Razeghi, "Temperature dependent characteristics of
λ ~ 3.8 µm room-temperature continuous-wave quantum-cascade lasers,"Applied Physics Letters 88
(25) (June 19, 2006) [http://link.aip.org/link/?APPLAB/88/251118].
267. M. Razeghi, H. Lim, S. Tsao, M. Taguchi, W. Zhang, and A.A. Quivy, "Quantum Dots in
GaInP/GaInAs/GaAs for Infrared Sensing," Advances in Science and Technology 51 (June 4,
2006) [http://dx.doi.org/10.4028/www.scientific.net/AST.51.201].
268. S.R. Darvish, S. Slivken, A. Evans, J.S. Yu, and M. Razeghi, "Room-temperature, high-power and
continuous-wave operation of distributed-feedback quantum-cascade lasers at λ ~ 9.6 µm," Applied
Physics Letters 88 (20) (May 15, 2006) [http://link.aip.org/link/?APL/88/201114/1].
269. M. Razeghi, Y. Wei, A. Hood, D. Hoffman, B.M. Nguyen, P.Y. Delaunay, E. Michel and R.
McClintock, "Type-II superlattice photodetectors for MWIR to VLWIR focal plane arrays," SPIE
Infrared Technology and Applications Conference April 17-21, 2006, Orlando, FL Proceedings – Infrared
Technology and Applications XXXII, Vol. 6206, p. 62060N-1 (April 21,
2006) [http://link.aip.org/link/?PSISDG/6206/62060N/1].
270. M. Razeghi, H. Lim, S. Tsao, M. Taguchi, W. Zhang, and A.A. Quivy, "Quantum-dot infrared
photodetectors and focal plane arrays," SPIE Infrared Technology and Applications Conference April
17-21, 2006, Orlando, FL Proceedings – Infrared Technology and Applications XXXII, Vol. 6206, p.
62060I-1 (April 21, 2006) [http://link.aip.org/link/?PSISDG/6206/62060I/1].
271. D.J. Rogers, F.Hosseini Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, "Electroluminescence
at 375 nm from a Zn0/GaN:Mg/c-Al2O3 heterojunction light emitting diodes," Applied Physics
Letters 88 (14) (April 13, 2006) [http://link.aip.org/link/?APL/88/141918/1].
272. A. Tsekoun, R. Go, M. Pushkarsky, M. Razeghi, and C. Kumar N. Patel, "Improved performance of
quantum cascade lasers through a scalable, manufacturable epitaxial-side-down mounting
process," Proceedings of the National Academy of Sciences 103 (13) (March 26,
2006) [http://www.pnas.org/cgi/content/abstract/103/13/4831].
273. J. Szafraniec, S. Tsao, W. Zhang, H. Lim, M. Taguchi, A.A. Quivy, B. Movaghar and M. Razeghi, "Highdetectivity quantum-dot infrared photodetectors grown by metal-organic chemical-vapor
deposition," Applied Physics Letters 88 (121102) (March 20,
2006) [http://link.aip.org/link/?APL/88/121102/1].
274. D.J. Rogers, F. Hosseini Teherani, T. Monteiro, M. Soares, A. Neves, M. Carmo, S. Periera, M.R. Correia,
A. Lusson, E. Alves, N.P. Barradas, J.K. Morrod, K.A. Prior, P. Kung, A. Yasan, and M.
Razeghi, "Investigations of p-type signal for ZnO thin films grown on (100) GaAs substrates by
pulsed laser deposition," Phys. Stat. Sol. C 3 (4) (March 1,
2006)[http://dx.doi.org/10.1002/pssc.200564756].
275. J.S. Yu, S. Slivken, A. Evans, S.R. Darvish, J. Nguyen, and M. Razeghi, "High-power λ ~ 9.5 µm
quantum-cascade lasers operating above room temperature in continuous-wave mode," Applied
Physics Letters 88 (9) (February 27, 2006) [http://link.aip.org/link/?APL/88/091113/1].
276. F. Fuchs, D. Hoffman, A. Gin, A. Hood, Y. Wei, and M. Razeghi, "Negative luminescence of InAs/GaSb
superlattice photodiodes," Phys. Stat. Sol. C 3 (3) (February 22,
2006)[http://doi.wiley.com/10.1002/pssc.200564175].
277. D. Hoffman, A. Hood, F. Fuchs and M. Razeghi, "Non-equilibrium radiation of long wavelength
InAs/GaSb superlattice photodiodes," Journal of Applied Physics 99 (February 15,
2006) [http://link.aip.org/link/?JAP/99/043503/1].
278. A. Hood, D. Hoffman, Y. Wei, F. Fuchs, and M. Razeghi, "Capacitance-voltage investigation of high
purity InAs/GaSb superlattice photodiodes," Applied Physics Letters 88 (6)(February 6,
2006) [http://dx.doi.org/10.1063/1.2172399 ].
279. D. Hoffman, A. Hood, E. Michel, F. Fuchs, and M. Razeghi, "Electroluminescence of InAs/GaSb
heterodiodes," IEEE Journal of Quantum Electronics 42 (2) (February 1,
2006)[http://dx.doi.org/10.1109/JQE.2005.861621].
280. A. Evans, J. Nguyen, S. Slivken, J.S. Yu, S.R. Darvish, and M. Razeghi, "Quantum-Cascade Lasers
Operating in Continuous-Wave Mode Above 90°C at λ ~5.25 µm," Applied Physics Letters 88
(5) (January 30, 2006) [http://link.aip.org/link/?APPLAB/88/051105/1].
281. J.S. Yu, S.R. Darvish, A. Evans, J. Nguyen, S. Slivken, and M. Razeghi, "Room-temperature
continuous-wave operation of quantum-cascade lasers at λ ~ 4 µm," Applied Physics Letters 88
(4) (January 23, 2006) [http://link.aip.org/link/?APL/88/041111/1].
282. D. Hoffman and M. Razeghi, "Positive and negative luminescence in binary Type-II InAs/GaSb
superlattice photodiodes," SPIE Conference San Jose, CA, Vol. 6127, pp. 61271H (January 23,
2006) [http://link.aip.org/link/?PSISDG/6127/61271H/1].
283. R. McClintock, K. Minder, A. Yasan, C. Bayram, F. Fuchs, P. Kung and M. Razeghi, "Solar-blind
avalanche photodiodes," SPIE Conference San Jose, CA, Vol. 6127, pp. 61271D (January 23,
2006) [http://dx.doi.org/10.1117/12.660147].
284. A. Hood, M. Razeghi, V. Nathan and M.Z. Tidrow, "Performance characteristics of high-purity midwave and long-wave infrared type-II InAs/GaSb superlattice infrared photodiodes," SPIE
Conference San Jose, CA, Vol. 6127, pp. 61270U (January 23,
2006) [http://link.aip.org/link/?PSISDG/6127/61270U/1].
285. H. Lim, S. Tsao, M. Taguchi, W. Zhang, A. Quivy and M. Razeghi, "InGaAs/InGaP Quantum-Dot
Photodetector with a High Detectivity," SPIE Conference San Jose, CA, Vol. 6127, pp. 61270N (January
23, 2006) [http://link.aip.org/link/?PSISDG/6127/61270N/1].
286. W. Zhang, H. Lim, M. Taguchi, A. Quivy and M. Razeghi, "InAs quantum dot infrared photodetectors
on InP by MOCVD," SPIE Conference San Jose, CA, Vol. 6127, pp. 61270M (January 23,
2006) [http://link.aip.org/link/?PSISDG/6127/61270M/1].
287. W.G. Jung, S.H. Jung, P. Kung, and M. Razeghi, "Fabrication of GaN nanotubular material using
MOCVD with aluminum oxide membrane," SPIE Conference San Jose, CA, Vol. 6127, pp. 61270K
(January 23, 2006) [http://link.aip.org/link/?PSISDG/6127/61270K/1].
288. W.W. Bewley, I. Vurgaftman, C.S. Kim, J.R. Meyer, J. Nguyen, A.J. Evans, J.S. Yu, S.R. Darvish, S.
Slivken and M. Razeghi, "High-Power Distributed-Feedback Quantum Cascade Lasers," SPIE
Conference San Jose, CA, Vol. 6127, pp. 612704 (January 23,
2006) [http://link.aip.org/link/?PSISDG/6127/612704/1].
289. S. Slivken, A. Evans, J.S. Yu, S.R. Darvish and M. Razeghi, "High Power, Continuous-Wave, Quantum
Cascade Lasers for MWIR and LWIR Applications," SPIE Conference San Jose, CA, Vol. 6127, pp.
612703 (January 23, 2006) [http://link.aip.org/link/?PSI/6127/612703/1].
290. A. Tsekoun, R. Go, M. Pushkarsky, M. Razeghi, C.K.N. Patel, "Improved performance of quantum
cascade lasers via manufacturable quality epitaxial side down mounting process utilizing aluminum
nitride heatsinks," SPIE Conference San Jose, CA, Vol. 6127, pp. 612702 (January 23,
2006) [http://link.aip.org/link/?PSISDG/6127/612702/1].
291. W.G. Jung, S.H. Jung, P. Kung, and M. Razeghi, "Fabrication of GaN Nanotubular Material using
MOCVD with an Aluminium Oxide Membrane," Nanotechnology 17 (January 1,
2006) [http://www.iop.org/EJ/abstract/0957-4484/17/1/010].
292. R. McClintock, A. Yasan, K. Minder, P. Kung, and M. Razeghi, "Avalanche multiplication in AlGaN
based solar-blind photodetectors," Applied Physics Letters 87 (24) (December 12,
2005) [http://link.aip.org/link/?APL/87/241123/1].
293. D. Hoffman, A. Gin, Y. Wei, A. Hood, F. Fuchs, and M. Razeghi, "Negative and positive luminescence
in mid-wavelength infrared InAs/GaSb superlattice photodiodes," IEEE Journal of Quantum
Electronics 41 (12) (December 1, 2005) [http://dx.doi.org/10.1109/JQE.2005.858783].
294. D. Hoffman, A. Hood, Y. Wei, A. Gin, F. Fuchs, and M. Razeghi, "Negative luminescence of longwavelength InAs/GaSb superlattice photodiodes," Applied Physics Letters 87 (20)(November 14,
2005) [http://dx.doi.org/10.1063/1.2130536].
295. W.W. Bewley, I. Vurgaftman, C.S. Kim, J.R. Meyer, J. Nguyen, A. Evans, J.S. Yu, S.R. Darvish, S.
Slivken, and M. Razeghi, "Characterization and Analysis of Single-Mode High-Power CW QuantumCascade Laser," Journal of Applied Physics 98 (October 15, 2005) [http://dx.doi.org/10.1063/1.2112170].
296. A. Hood, M. Razeghi, E. Aifer, G.J. Brown, "On the performance and surface passivation of type-II
InAs/GaSb superlattice photodiodes for the very-long- wavelength infrared,"Applied Physics Letters
87 (1) (October 10, 2005) [http://dx.doi.org/10.1063/1.2089170].
297. H. Lim, W. Zhang, S. Tsao, T. Sills, J. Szafraniec, K. Mi, B. Movaghar, and M. Razeghi, "Quantum Dot
Infrared Photodetectors: Comparison Experiment and Theory," Virtual Journal of Nanoscale Science
and Technology 12 (9) (August 29, 2005) [http://www.vjnano.org].
298. H. Lim, W. Zhang, S. Tsao, T. Sills, J. Szafraniec, K. Mi, B. Movaghar, and M. Razeghi, "Quantum Dot
Infrared Photodetectors: Comparison Experiment and Theory," Physical Review B 72 (August 17,
2005) [http://dx.doi.org/10.1103/PhysRevB.72.085332].
299. J.S. Yu, S. Slivken, S.R. Darvish, A. Evans, B. Gokden and M. Razeghi, "High-power, roomtemperature and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ =
4.8 µm," Virtual Journal of Nanoscale Science and Technology 12 (5) (August 1,
2005) [http://www.vjnano.org].
300. J.S. Yu, S. Slivken, S.R. Darvish, A. Evans, B. Gokden and M. Razeghi, "High-power, roomtemperature and continuous-wave operation of distributed-feedback quantum-cascade lasers at λ =
4.8 µm," Applied Physics Letters 87 (4) (July 25, 2005) [http://dx.doi.org/10.1063/1.2408639 ].
301. A. Gin, B. Movaghar, M. Razeghi and G.J. Brown, "Infrared detection from GaInAs/InP nanopillar
arrays," Nanotechnology 16 (July 1, 2005) [http://dx.doi.org/10.1088/0957-4484/16/9/067].
302. Manijeh Razeghi; Wei Zhang; Ho-Chul Lim; Stanley Tsao; John Szafraniec; Maho Taguchi; Bijan
Movaghar, "Focal plane arrays based on quantum dot infrared photodetectors,"Proc. SPIE
5838 Nanotechnology II, 125 (June 28, 2005); (June 28, 2005) [http://dx.doi.org/10.1117/12.607534].
303. Y. Wei, A. Hood, H. Yau, A. Gin, M. Razeghi, M.Z. Tidrow, V. Natha, "Uncooled operation of Type-II
InAs/GaSb superlattice photodiodes in the mid- wavelength infrared range,"Applied Physics
Letters 86 (23) (June 6, 2005) [http://link.aip.org/link/?APL/086/233106 ].
304. J.S. Yu, A. Evans, S. Slivken, S.R. Darvish, and M. Razeghi, "Short Wavelength (λ~ 4.3 μm) HighPerformance Continuous-Wave Quantum-Cascade Lasers," IEEE Photonics Technology Letters 17 (6)
(June 1, 2005) [http://dx.doi.org/10.1109/LPT.2005.846568].
305. W.W. Bewley, J.R. Lindle, C.S. Kim, I. Vurgaftman, J.R. Meyer, A.J. Evans, J.S. Yu, S. Slivken, and M.
Razeghi, "Beam Steering in High-Power CW Quantum Cascade Lasers,"IEEE Journal of Quantum
Electronics 41 (6) (June 1, 2005) [http://dx.doi.org/10.1109/JQE.2005.846691].
306. M. Razeghi; A. Yasan; R. McClintock; K. Mayes; P. Kung, "Short-wavelength ultraviolet light-emitting
diodes based on AlGaN," 2005 Conference on Lasers and Electro-OpticsCLEO. 153-155 [CMI5] (2005)
(May 22, 2005) [http://www.opticsinfobase.org/abstract.cfm?uri=CLEO-2005-CMI5].
307. W. Zhang, H. Lim, M. Taguchi, S. Tsao, B. Movaghar, and M. Razeghi, "High Detectivity InAs
Quantum-Dot Infrared Photodetectors Grown on InP by Metalorganic Chemical Vapor
Deposition," Applied Physics Letters 86 (19) (May 9, 2005) [http://dx.doi.org/10.1063/1.1923176 ].
308. M. Razeghi, Y. Wei, A. Gin, A. Hood, V. Yazdanpanah, M.Z. Tidrow, and V. Nathan, "High
performance Type-II InAs/GaSb superlattices for mid, long, and very long wavelength infrared focal
plane arrays," SPIE Conference Orlando, FL, Vol. 5783, pp. 86 (March 28,
2005) [http://dx.doi.org/10.1117/12.605291 ].
309. Y. Wei, A. Hood, H. Yau, V. Yazdanpanah, M. Razeghi, M.Z. Tidrow and V. Nathan, "HighPerformance Type-II InAs/GaSb Superlattice Photodiodes with Cutoff Wavelength Around 7
µm," Applied Physics Letters 86 (9) (February 28, 2005) [http://link.aip.org/link/?APPLAB/86/091109/1].
310. J.R. Meyer, W.W. Bewley, J.R. Lindle, I. Vurgaftman, A.J. Evans, J.S. Yu, S. Slivken, and M.
Razeghi, "High-Power CW Mid-IR Quantum Cascade Lasers," SPIE Conference Jose, CA, (January
22, 2005) [http://dx.doi.org/10.1117/12.597072].
311. R. McClintock, A. Yasan, K. Mayes, P. Kung, and M. Razeghi, "Back-illuminated solar-blind
photodetectors for imaging applications," SPIE Conference Jose, CA, Vol. 5732, pp.175 (January 22,
2005) [http://dx.doi.org/10.1117/12.597077].
312. A. Yasan, R. McClintock, K. Mayes, P. Kung, and M. Razeghi, "AlGaN-based deep UV light emitting
diodes with peak emission below 255 nm," SPIE Conference Jose, CA, Vol. 5732, pp. 197 (January 22,
2005) [http://dx.doi.org/10.1117/12.597078].
313. Y. Wei, A. Hood, A. Gin, V. Yazdanpanah, M. Razeghi and M. Tidrow, "High performance LWIR
Type-II InAs/GaSb superlattice photodetectors and infrared focal plane array,"SPIE
Conference Jose, CA, Vol. 5732, pp. 309 (January 22, 2005) [http://dx.doi.org/10.1117/12.597141].
314. A. Hood, Y. Wei, A. Gin, M. Razeghi, M. Tidrow, and V. Nathan, "Passivation of Type-II InAs/GaSb
superlattice photodetectors," SPIE Conference Jose, CA, Vol. 5732, pp. 316 (January 22,
2005) [http://dx.doi.org/10.1117/12.597140].
315. W. Zhang, H. Lim, M. Taguchi, S. Tsao, J. Szafraniec, B. Movaghar, M. Razeghi, and M. Tidrow, "High
performance InAs quantum dot infrared photodetectors (QDIP) on InP by MOCVD," SPIE
Conference Jose, CA, Vol. 5732, pp. 326 (January 22, 2005) [http://dx.doi.org/10.1117/12.597139].
316. S. Tsao, K. Mi, J. Szafraniec, W. Zhang, H. Lim, B. Movaghar, and M. Razeghi, "High performance
InGaAs/InGaP quantum dot infrared photodetector achieved through doping level
optimization," SPIE Conference Jose, CA, Vol. 5732, pp. 334 (January 22,
2005) [http://dx.doi.org/10.1117/12.597208].
317. A. Gin, Y. Wei, A. Hood, D. Hoffman, M. Razeghi and G.J. Brown, "GaInAs/InP nanopillar arrays for
long wavelength infrared detection," SPIE Conference Jose, CA, Vol. 5732, pp. 350 (January 22,
2005) [http://dx.doi.org/10.1117/12.597073].
318. D.J. Rogers, F. Hosseini Teherani, A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, M. Razeghi
and G. Garry, "ZnO Thin Film Templates for GaN-based Devices," SPIE Conference Jose, CA, Vol.
5732, pp. 412 (January 22, 2005) [http://dx.doi.org/10.1117/12.596912].
319. M. Razeghi, H. Lim, S. Tsao, J. Szafraniec, W. Zhang, K. Mi, and B. Movaghar, "Transport and
Photodetection in Self-Assembled Semiconductor Quantum Dots," Nanotechnology16 (January 7,
2005) [http://dx.doi.org/10.1088/0957-4484/16/2/007].
320. R. McClintock, K. Mayes, A. Yasan, D. Shiell, P. Kung, and M. Razeghi, "320x256 Solar-Blind Focal
Plane Arrays based on AlxGa1-xN," Applied Physics Letters 86 (1) (January 3,
2005) [http://link.aip.org/link/?APL/086/011117].
321. J. Jiang, S. Tsao, K. Mi, M. Razeghi, G.J. Brown, C. Jelen and M.Z. Tidrow, "Advanced Monolithic
Quantum Well Infrared Photodetector Focal Plane Array Integrated with Silicon Readout
Integrated Circuit," Infrared Physics and Technology 46 (3) (January 1,
2005) [http://dx.doi.org/10.1016/j.infrared.2004.02.002].
322. A. Evans, J.S. Yu, S. Slivken, and M. Razeghi, "Continuous-wave operation of λ ~ 4.8 µm quantumcascade lasers at room temperature," Applied Physics Letters 85 (12) (September 20,
2004) [http://link.aip.org/link/?APPLAB/85/2166/1].
323. M. Razeghi, A. Yasan, R. McClintock, K. Mayes, D. Shiell, S. Darvish, and P. Kung, "Review of IIINitride Optoelectronic Materials for light Emission and Detection," Physica Status Solidi C S141 S148 (September 10, 2004) [http://dx.doi.org/10.1002/pssc.200405133].
324. J. Jiang, K. Mi, S. Tsao, W. Zhang, H. Lim, T.O'Sullivan, T. Sills, M. Razeghi, G.J. Brown, and M.Z.
Tidrow, "Demonstration of a 256x256 Middle-Wavelength Infrared Focal Plane Array based on
InGaAs/InGaP Quantum Dot Infrared Photodetectors (QDIPs)," Applied Physics Letters 84 (13)
(April 29, 2004) [http://link.aip.org/link/?APL/084/2232].
325. J. Jiang, S. Tsao, T. O'Sullivan, W. Zhang, H. Lim, T. Sills, K. Mi, M. Razeghi, G.J. Brown, and M.Z.
Tidrow, "High Detectivity InGaAs/InGaP Quantum-Dot Infrared Photodetectors Grown by Low
Pressure Metalorganic Chemical Vapor Deposition," Applied Physics Letters 84 (12) (April 22,
2004) [http://link.aip.org/link/?APPLAB/84/2166/1].
326. J. Jiang, K. Mi, S. Tsao, W. Zhang, H. Lim, T.O'Sullivan, T. Sills, M. Razeghi, G.J. Brown, and M.Z.
Tidrow, "Demonstration of a 256x256 Middle-Wavelength Infrared Focal Plane Array based on
InGaAs/InGaP Quantum Dot Infrared Photodetectors (QDIPs)," Virtual Journal of Nanoscale Science
and Technology 9 (13) (April 5, 2004)[http://www.vjnano.org].
327. J. Jiang, S. Tsao, T. O'Sullivan, W. Zhang, H. Lim, T. Sills, K. Mi, M. Razeghi, G.J. Brown, and M.Z.
Tidrow, "High Detectivity InGaAs/InGaP Quantum-Dot Infrared Photodetectors Grown by Low
Pressure Metalorganic Chemical Vapor Deposition," Virtual Journal of Nanoscale Science and
Technology 9 (12) (March 29, 2004)[http://www.vjnano.org].
328. A. Gin, Y. Wei, A. Hood, A. Bajowala, V. Yazdanpanah, M. Razeghi and M.Z. Tidrow, "Ammonium
Sulfide Passivation of Type-II InAs/GaSb Superlattice Photodiodes," Applied Physics Letters 84 (12)
(March 22, 2004) [http://link.aip.org/link/?APPLAB/84/2037/1].
329. J. Jiang, S. Tsao, T. O'Sullivan, M. Razeghi, and G.J. Brown, "Fabrication of Indium Bumps for Hybrid
Infrared Focal Plane Array Applications," Infrared Physics and Technology45 (2) (March 1,
2004) [http://dx.doi.org/10.1016/j.infrared.2003.08.002].
330. J.S. Yu, A. Evans, J. David, L. Doris, S. Slivken and M. Razeghi, "High-Power Continuous-Wave
Operation of Quantum-Cascade Lasers Up to 60 °C," IEEE Photonics Technology Letters 16 (3)
(March 1, 2004) [http://dx.doi.org/10.1109/LPT.2004.823686].
331. S. Slivken, J.S. Yu, A. Evans, L. Doris, J. David, and M. Razeghi, "Ridge-Width Dependence on HighTemperature Continuous-Wave Quantum-Cascade Laser Operation," IEEE Photonics Technology
Letters 16 (3) (March 1, 2004) [http://dx.doi.org/10.1109/LPT.2004.823746].
332. R. McClintock, A. Yasan, K. Mayes, D. Shiell, S.R. Darvish, P. Kung and M. Razeghi, "High Quantum
Efficiency AlGaN Solar-Blind Photodetectors," Applied Physics Letters 84 (8) (February 23,
2004) [http://link.aip.org/link/?APL/084/1248].
333. K. Mayes, A. Yasan, R. McClintock, D. Shiell, S.R. Darvish, P. Kung, and M. Razeghi, "High Power 280
nm AlGaN Light Emitting Diodes Based on an Asymmetric Single Quantum Well," Applied Physics
Letters 84 (7) (February 16, 2004) [http://link.aip.org/link/?APL/84/1046].
334. Y. Wei and M. Razeghi, "Modeling of Type-II InAs/GaSb Superlattices Using Empirical TightBinding Method and Interface Engineering," Physical Review B 69 (8) (February 15,
2004) [http://dx.doi.org/10.1103/PhysRevB.69.085316 ].
335. A. Gin, Y. Wei, J. Bae, A. Hood, J. Nah, and M. Razeghi, "Passivation of Type-II InAs/GaSb
Superlattice Photodiodes," International Conference on Metallurgical Coatings and Thin Films
(ICMCTF) San Diego, CA; Thin Solid Films 447-448 (January 30,
2004) [http://dx.doi.org/10.1016/j.tsf.2003.09.002].
336. R. McClintock, A. Yasan, K. Mayes, D. Shiell, S. Darvish, P. Kung and M. Razeghi, "High Quantum
Efficiency Solar-Blind Photodetectors," SPIE Conference Jose, CA, Vol. 5359, pp. 434 (January 25,
2004) [http://dx.doi.org/10.1117/12.529348].
337. A. Yasan, R. McClintock, K. Mayes, D. Shiell, S. Darvish, P. Kung and M. Razeghi, "Growth of Deep
UV Light Emitting Diodes by Metalorganic Chemical Vapor Deposition," SPIE Conference Jose, CA,
Vol. 5359, pp. 400 (January 25, 2004) [http://dx.doi.org/10.1117/12.529343].
338. Y. Wei, M. Razeghi, G.J. Brown, and M.Z. Tidrow, "Modeling Type-II InAs/GaSb Superlattices Using
Empirical Tight-Binding Method: New Aspects," SPIE Conference Jose, CA, Vol. 5359, pp. 301
(January 25, 2004) [http://dx.doi.org/10.1117/12.528297].
339. A. Evans, J. David, L. Doris, J.S. Yu, S. Slivken and M. Razeghi, "High Power, Room Temperature,
Continuous-Wave Operation of Quantum Cascade Lasers Grown by GasMBE," SPIE
Conference Jose, CA, Vol. 5359, pp. 188 (January 25, 2004) [http://dx.doi.org/10.1117/12.529664].
340. A. Evans, J.S. Yu, J. David, L. Doris, K. Mi, S. Slivken, and M. Razeghi, "High-temperature high-power
continuous-wave operation of buried heterostructure quantum-cascade lasers," Applied Physics
Letters 84 (3) (January 19, 2004) [http://link.aip.org/link/?APPLAB/84/314/1].
341. J.S. Yu, A. Evans, J. David, L. Doris, S. Slivken, and M. Razeghi, "Cavity Length Effects of HighTemperature High-Power Continuous Wave Characteristics in Quantum-Cascade Lasers," Applied
Physics Letters 83 (25) (December 22, 2003) [http://link.aip.org/link/?APPLAB/83/5136/1].
342. A. Yasan, R. McClintock, K. Mayes, D. Shiell, L. Gautero, S.R. Darvish, P. Kung and M. Razeghi, "4.5
mW Operation of AlGaN-based 267 nm Deep-Ultraviolet Light-Emitting Diodes," Applied Physics
Letters 83 (23) (December 8, 2003) [http://link.aip.org/link/?APL/83/4701].
343. A. Yasan, R. McClintock, K. Mayes, D.H. Kim, P. Kung, and M. Razeghi, "Photoluminescence Study of
AlGaN-based 280 nm Ultraviolet Light-Emitting Diodes," Applied Physics Letters 83 (20) (November
17, 2003) [http://link.aip.org/link/?APL/83/4083].
344. Y. Wei, J. Bae, A. Gin, A. Hood, M. Razeghi, G.J. Brown, and M. Tidrow, "High Quality Type-II
InAs/GaSb Superlattices with Cutoff Wavelength ~3.7 µm Using Interface Engineering," Journal of
Applied Physics 94 (7) (October 1, 2003) [http://link.aip.org/link/?JAPIAU/94/4720/1].
345. J.S. Yu, S. Slivken, A. Evans, L. Doris, and M. Razeghi, "High-Power Continuous-Wave Operation of a
6 µm Quantum-Cascade Laser at Room Temperature," Applied Physics Letters 83 (13) (September 29,
2003) [http://link.aip.org/link/?APPLAB/83/2503/1].
346. M. Razeghi, "Overview of Antimonide Based III-V Semiconductor Epitaxial Layers and their
Applications at the Center for Quantum Devices," The European Physical Journal-Applied Physics Vol.
23 (September 15, 2003) [http://dx.doi.org/10.1051/epjap:2003056].
347. J. Jiang, K. Mi, R. McClintock, M. Razeghi, G.J. Brown, and C. Jelen, "Demonstration of 256x256 Focal
Plane Arrays Based on Al-free GaInAs/InP QWIP," IEEE Photonics Technology Letters 15
(9) (September 1, 2003) [http://dx.doi.org/10.1109/LPT.2003.816667].
348. J.S. Yu, S. Slivken, A. Evans, J. David and M. Razeghi, "Very High Average Power at Room
Temperature from λ ~ 5.9 μm Quantum Cascade Lasers," Virtual Journal of Nanoscale Science &
Technology 26 (May 26, 2003) [http://www.vjnano.org].
349. J.S. Yu, S. Slivken, A. Evans, J. David and M. Razeghi, "Very High Average Power at Room
Temperature from λ ~ 5.9 μm Quantum Cascade Lasers," Applied Physics Letters 82 (20) (May 19,
2003) [http://dx.doi.org/10.1063/1.1574404 ].
350. M. Razeghi, A. Gin, Y. Wei, J. Bae, and J. Nah, "Quantum Sensing Using Type-II InAs/GaSb
Superlattice for Infrared Detection," Microelectronics Journal 34 (5-8) (May 1,
2003)[http://dx.doi.org/10.1016/S0026-2692(03)00035-1].
351. M. Razeghi, S. Slivken, J. Yu, A. Evans, and J. David, "High Performance Quantum Cascade Lasers at
λ ~ 6 μm," Microelectronics Journal 34 (5-8) (May 1, 2003)[http://dx.doi.org/10.1016/S00262692(03)00030-2].
352. M. Razeghi, S. Slivken, A. Tahraoui, A. Matlis, and Y.S. Park, "High Power 3-12 μm Infrared Lasers:
Recent Improvements and Future Trends," Advanced Research Workshop on Semiconductor
Nanostructures Queenstown, New Zealand; Proceedings (February 5,
2003) [http://dx.doi.org/10.1016/S1386-9477(01)00210-7].
353. M. Razeghi and S. Slivken, "High Power Quantum Cascade Lasers Operating at Room
Temperature," Journal of the Korean Physical Society Vol. 42, pp. S637-S641 (February 1,
2003) [http://www.kps.or.kr/home/kor/journal/library/journal.asp?journaluid=%7B358C63CB-9841-41CA8BE0-9463416F01AD%7D].
354. G.J. Brown, F. Szmulowicz, K. Mahalingam, S. Houston, Y. Wei, A. Gin and M. Razeghi, "Recent
Advances in InAs/GaSb Superlattices for Very Long Wavelength Infrared Detection," SPIE
Conference San Jose, CA, Vol. 4999, pp. 457 (January 27, 2003) [http://dx.doi.org/10.1117/12.483916].
355. S. Slivken and M. Razeghi, "Very High Average Power Quantum Cascade Lasers by GasMBE," SPIE
Conference San Jose, CA, Vol. 4999, pp. 59 (January 27, 2003)[http://dx.doi.org/10.1117/12.507398].
356. A. Yasan and M. Razeghi, "Very high quality p-type AlxGa1-xN/GaN superlattice," special ISDRS issue
of Solid State Electronics Journal 47 (January 1, 2003)[http://dx.doi.org/10.1016/S0038-1101(02)00211-3].
357. M. Razeghi, "Artificial Atoms: Solution for Infrared Multicolor Focal Plane Arrays," Proceedings of
the American Physical Society Annual APS March Meeting (January 1,
2003)[http://flux.aps.org/meetings/YR02/MAR02/baps/abs/S80001.html].
358. M. Razeghi and S. Slivken, "High Performance Quantum Cascade Laser Results at the Centre for
Quantum Devices," Physica Status Solidi 195 (1) (January 1,
2003)[http://dx.doi.org/10.1002/pssa.200306221].
359. M. Razeghi and S. Slivken, "High Power Quantum Cascade Lasers (QCLs) Grown by
GasMBE," Opto-Electronics Review 11 (2) (January 1,
2003)[http://www.wat.edu.pl/review/optor/abstract11_2.htm#85].
360. S. Slivken, A. Evans, J. David, and M. Razeghi, "High-Average-Power, High-Duty-Cycle (~6 μm)
Quantum Cascade Lasers," Virtual Journal of Nanoscience & Technology 9(December 9,
2002) [http://www.vjnano.org].
361. S. Slivken, A. Evans, J. David, and M. Razeghi, "High-Average-Power, High-Duty-Cycle (~6 μm)
Quantum Cascade Lasers," Applied Physics Letters 81 (23) (December 2,
2002)[http://dx.doi.org/10.1063/1.1526462 ].
362. Y. Wei, A. Gin, M. Razeghi and G.J. Brown, "Type-II InAs/GaSb superlattice photovoltaic detectors
with cutoff wavelength approaching 32 μm," Applied Physics Letters 81 (19) (November 4,
2002) [http://link.aip.org/link/APPLAB/v81/i19/p3675/s1].
363. M. Razeghi and S. Slivken, "High Power Quantum Cascade Lasers (QCLs) Grown by
GasMBE," SPIE Proceedings International Conference on Solid State Crystals (ICSSC), Zakopane,
Poland, (October 14, 2002) [http://dx.doi.org/10.1117/12.519745].
364. A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, H. Zhang, P. Kung, M. Razeghi, S.K. Lee and J.Y.
Han, "Comparison of ultraviolet light-emitting diodes with peak emission at 340 nm grown on GaN
substrate and sapphire," Applied Physics Letters 81 (12) (September 16,
2002) [http://link.aip.org/link/?APL/81/2151].
365. A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, and M. Razeghi, "Top-emission ultraviolet
light-emitting diodes with peak emission at 280 nm," Virtual Journal of Nanoscale Science &
Technology 5 (August 5, 2002) [http://www.vjnano.org].
366. A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, and M. Razeghi, "Top-emission ultraviolet
light-emitting diodes with peak emission at 280 nm," Applied Physics Letters 81 (5) (July 29,
2002) [http://link.aip.org/link/?APL/81/801].
367. M. Razeghi and S. Slivken, "Optoelectronic Integrated Circuits (OEICs) for Next Generation WDM
Communications," SPIE Conference Boston, MA, (July 29, 2002)[http://dx.doi.org/10.1117/12.475555 ].
368. S. Slivken, Z. Huang, A. Evans, and M. Razeghi, "High-Power (~9 μm) Quantum Cascade
Lasers," Applied Physics Letters 80 (22) (June 3,
2002)[http://link.aip.org/link/APPLAB/v80/i22/p4091/s1].
369. M. Razeghi, "Low-Pressure Metal Organic Chemical Vapor Deposition Growth of InAsSbP Based
Materials for Infrared Laser Applications," 15th Annual Solid State and Diode Laser Technology
Review (SSDLTR) Albuquerque, NM; Technical Digest MIR1 (June 3, 2002).
370. W. Zhang and M. Razeghi, "High power InAsSbP based electrical injection laser diodes emitting
between 3-5 μm," 15th Annual Solid State and Diode Laser Technology Review (SSDLTR) Albuquerque,
NM; Technical Digest MIR1 (June 3, 2002).
371. S. Slivken, Z. Huang, A. Evans, and M. Razeghi, "High-Power (~9 μm) Quantum Cascade
Lasers," Virtual Journal of Nanoscale Science and Technology 5 (22) (June 3,
2002)[http://www.vjnano.org].
372. M. Razeghi and S. Slivken, "Optoelectronics: Learning From Nature," Business Briefing: Global
Optical Communications (June 1, 2002).
373. M. Razeghi, "Short Wavelength Solar-Blind Detectors: Status, Prospects, and Markets," IEEE
Proceedings Wide Bandgap Semiconductor Devices: The Third Generation Semiconductor Comes of Age
90 (6) (June 1, 2002) [http://dx.doi.org/10.1109/JPROC.2002.1021565].
374. Y. Wei, A. Gin, M. Razeghi, and G.J. Brown, "Advanced InAs/GaSb Superlattice Photovoltaic
Detectors for Very-Long Wavelength Infrared Applications," Applied Physics Letters 80 (18) (May 6,
2002) [http://link.aip.org/link/APPLAB/v80/i18/p3262/s1].
375. P. Kung, A. Yasan, R. McClintock, S. Darvish, K. Mi, and M. Razeghi, "Future of AlxGa1-xN Materials
and Device Technology for Ultraviolet Photodetectors," SPIE Conference San Jose, CA, Vol. 4650, pp.
199 (May 1, 2002) [http://dx.doi.org/10.1117/12.467650].
376. A. Yasan, R. McClintock, S.R. Darvish, Z. Lin, K. Mi, P. Kung, and M. Razeghi, "Characteristics of high
quality p-type AlxGa1-xN/GaN superlattices," Applied Physics Letters 80 (12) (March 18,
2002) [http://link.aip.org/link/?APL/80/2108].
377. J. Jiang, C. Jelen, M. Razeghi and G.J. Brown, "High Detectivity GaInAs/InP Quantum Well Infrared
Photodetectors Grown on Si Substrates," IEEE Photonics Technology Letters 14 (3) (March 1,
2002) [http://dx.doi.org/10.1109/68.986817].
378. M. Razeghi, Y. Wei, A. Gin, G.J. Brown and D. Johnstone, "Type-II InAs/GaSb Superlattices and
Detectors with Cutoff Wavelength Greater Than 18 μm," Proceedings of the SPIESan Jose, CA, Vol.
4650, 111 (2002) (January 25, 2002) [http://dx.doi.org/10.1117/12.467673].
379. S. Slivken and M. Razeghi, "Development of Quantum Cascade Lasers for High Peak Output Power
and Low Threshold Current Density," Solid State Electronics 46 (January 1,
2002) [http://dx.doi.org/10.1016/S0038-1101(02)00100-4].
380. A. Yasan, R. McClintock, K. Mayes, S.R. Darvish, P. Kung, M. Razeghi, and R.J. Molnar, "280 nm UV
LEDs Grown on HVPE GaN Substrates," Opto-Electronics Review 10 (4) (January 1,
2002) [http://www.wat.edu.pl/review/optor/abstract10_4.htm].
381. H. Ohsato, K. Wada, T. Kato, C.J. Sun, and M. Razeghi, "Crystallographic Growth Models of WurtziteType Thin Films on 6H-SiC," Materials Science Forum Vol. 389-393 no. 2, pp. 1489-1492. (January 1,
2002) [http://www.scientific.net/MSF.389-393.1489].
382. M. Razeghi, H. Mohseni and G.J. Brown, "Type-II Binary Superlattices for Infrared
Detector," Journal of the Korean Physical Society 39 (December 1,
2001)[http://www.kps.or.kr/jkps/abstract_view.asp?articleuid=894634D7-8A72-4D85-9852E67A4A1F83C0].
383. M. Razeghi, Y. Wei, A. Gin and G.J. Brown, "Quantum Dots of InAs/GaSb Type-II Superlattice for
Infrared Sensing," Materials Research Society Fall Meeting Boston, MA; MRS Symposium Proceedings,
Vol. 692 (H3.1) (November 26,
2001) [http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2496&DID=135405].
384. M. Razeghi, S. Slivken, A. Tahraoui, A. Matlis, and Y.S. Park, "High Power 3-12 μm Infrared Lasers:
Recent Improvements and Future Trends," Physica E: Low-Dimensional Systems and Nanostructures
11 (2-3) (October 1, 2001) [http://dx.doi.org/10.1016/S1386-9477(01)00210-7].
385. H. Mohseni and M. Razeghi, "Long Wavelength Type-II Photodiodes Operating at Room
Temperature," IEEE Photonics Technology Letters 13 (5) (May 1,
2001)[http://dx.doi.org/10.1109/68.920771 ].
386. H. Mohseni, M. Razeghi, G.J. Brown, Y.S. Park, "High Performance InAs/GaSb Superlattice
Photodiodes for the Very Long Wavelength Infrared Range," Applied Physics Letters 78 (15) (April 9,
2001) [http://link.aip.org/link/APPLAB/v78/i15/p2107/s1].
387. M. Razeghi and H. Mohseni, "Miniaturization: enabling technology for the new millennium," SPIE
International Conference on Solid State Crystals Zakopane, Poland, (April 1,
2001)[http://dx.doi.org/10.1117/12.425401].
388. A. Tahraoui, A. Matlis, S. Slivken, J. Diaz, and M. Razeghi, "High performance quantum cascade lasers
(~11 μm) operating at high temperature (T>= 425K)," Applied Physics Letters 78 (4) (January 22,
2001) [http://link.aip.org/link/APPLAB/v78/i4/p416/s1].
389. M. Razeghi, S. Slivken, A. Tahraoui and A. Matlis, "High Performance Quantum Cascade Lasers
Grown by Gas-Source Molecular Beam Epitaxy," SPIE Conference San Jose, CA, (January 22,
2001) [http://dx.doi.org/10.1117/12.429791].
390. C. Jelen, M. Erdtmann, S. Kim, and M. Razeghi, "Quantum Dot Intersubband Photodetectors," SPIE
Conference San Jose, CA, (January 22, 2001)[http://dx.doi.org/10.1117/12.429402].
391. M. Erdtmann and M. Razeghi, "Monolithic Integration of GaInAs/InP Quantum Well Infrared
Photodetectors on Si Substrate," SPIE Conference San Jose, CA, (January 22,
2001)[http://dx.doi.org/10.1117/12.429426].
392. H. Mohseni, Y. Wei, and M. Razeghi, "High Performance Type-II InAs/GaSb Superlattice
Photodiodes," SPIE Conference San Jose, CA, (January 22, 2001)[http://dx.doi.org/10.1117/12.429406].
393. R. McClintock, P. Sandvik, K. Mi, F. Shahedipour, A. Yasan, C. Jelen, P. Kung, and M. Razeghi, "AlxGa1xN Materials and Device Technology for Solar Blind Ultraviolet Photodetector Applications," SPIE
Conference San Jose, CA, Vol. 4288, pp. 219 (January 22, 2001) [http://dx.doi.org/10.1117/12.429409 ].
394. M. Razeghi, "Novel Sb-based Alloys for Uncooled Infrared Photodetector Applications," SPIE
Conference San Jose, CA, (January 22, 2001) [http://dx.doi.org/10.1117/12.429414].
395. M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino and Y.S. Park, "Long-Wavelength Quantum
Well Infrared Photodetectors," Defense Science Journal 51 (1) (January 1, 2001).
396. M. Razeghi and H. Mohseni, "Miniaturization: enabling technology for the new millennium," OptoElectronics Review 9 (2) (January 1, 2001).
397. M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino, G.J. Brown, and Y.S. Park, "Development of
Quantum Well Infrared Photodetectors at the Center for Quantum Devices," Infrared Physics and
Technology 42 (3-5) (January 1, 2001).
398. P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, "AlxGa1-xN for
Solar-Blind UV Detectors," Journal of Crystal Growth 231 (2001) (January 1,
2001) [http://dx.doi.org/10.1016/S0022-0248(01)01467-1].
399. J.J. Lee and M. Razeghi, "Novel Sb-based Materials for Uncooled Infrared Photodetector
Applications," Journal of Crystal Growth 221 (1-4) (December 1, 2000).
400. B. Lane and M. Razeghi, "High Power Electrically Injected Mid-Infrared Interband Lasers Grown by
LP-MOCVD," Journal of Crystal Growth 221 (1-4) (December 1, 2000).
401. M. Razeghi, "Optoelectronic Devices Based on III-V Compound Semiconductors Which Have Made
a Major Scientific and Technological Impact in the Past 20 Years," IEEE Journal of Selected Topics in
Quantum Electronics 6 (6) pp.1344 - 1354 (November 1, 2000) [http://dx.doi.org/10.1109/2944.902188].
402. A. Matlis, S. Slivken, A. Tahraoui, K.J. Luo, J. Diaz, Z. Wu, A. Rybaltowski, C. Jelen, and M.
Razeghi, "Low-threshold and high power (~9.0 μm) quantum cascade lasers operating at room
temperature," Applied Physics Letters 77 (12) (September 18,
2000) [http://link.aip.org/link/APPLAB/v77/i12/p1741/s1].
403. H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, G.J. Brown, W.C. Mitchel, and Y.S. Park, "Very
Long Wavelength Infrared Type-II Detectors Operating at 80K," Applied Physics Letters 77
(11) (September 11, 2000) [http://link.aip.org/link/APPLAB/v77/i11/p1572/s1].
404. P. Kung and M. Razeghi, "III-Nitride Wide Bandgap Semiconductors: A Survey of the Current Status
and Future Trends of the Material and Device technology," Opto-Electronics Review 8 (3) (September
1, 2000) [http://baztech.icm.edu.pl/baztech/cgi-bin/btgetdoc.cgi?BWA1-0001-0864].
405. M. Razeghi, M. Erdtmann, C. Jelen, J. Diaz, F. Guastavino, G. J. Brown, and Y.S. Park, "Quantum Well
Infrared Photodetectors (3 - 20 μm) Focal Plane Arrays: Monolithic Integration with Si-based
Readout-integrated Circuitry for Low Cost and High Performance," SPIE Conference Infrared
Technology and Applications XXVI, San Diego, CA, (July 30, 2000).
406. M. Razeghi, P. Sandvik, P. Kung, D. Walker, K. Mi, X. Zhang, V. Kumar, J. Diaz, and F.
Shahedipour, "Lateral Epitaxial Overgrowth of GaN on Sapphire and Silicon Substrates for
Ultraviolet Photodetector Applications," Materials Science and Engineering B: Solid-State Materials for
Advanced Technology Vol. B74 (1-3) (May 1, 2000).
407. B. Lane, S. Tong, J. Diaz, Z. Wu, and M. Razeghi, "High Power InAsSb/InAsSbP Electrical Injection
Laser Diodes Emitting Between 3—5 μm," Materials Science and Engineering B: Solid-State Materials
for Advanced Technology Vol. B74 (1-3) (May 1, 2000).
408. D. Walker and M. Razeghi, "The Development of Nitride-based UV Photodetector," Opto-Electronics
Review 8 (1) (March 1, 2000).
409. H. Mohseni, A. Tahraoui, J. Wojkowski, M. Razeghi, W. Mitchel, and A. Saxler, "Growth and
Characterization of Very Long Wavelength Type-II Infrared Detectors," SPIE Conference San Jose,
CA, (January 26, 2000) [http://dx.doi.org/10.1117/12.382113].
410. H. Mohseni, J. Wojkowski, A. Tahraoui, M. Razeghi, G. Brown and W. Mitche, "Growth and
Characterization of Type-II Non-Equilibrium Photovoltaic Detectors for Long Wavelength Infrared
Range," SPIE Conference San Jose, CA, (January 26, 2000) [http://dx.doi.org/10.1117/12.382114].
411. M. Erdtmann, A. Matlis, C. Jelen, M. Razeghi, and G. Brown, "High-responsivity GaInAs/InP Quantum
Well Infrared Photodetectors Grown by Low-Pressure Metalorganic Chemical Vapor
Deposition," SPIE Conference San Jose, CA, (January 26, 2000) [http://dx.doi.org/10.1117/12.382122].
412. M. Erdtmann, J. Jiang, A. Matlis, A. Tahraoui, C. Jelen, M. Razeghi, and G. Brown, "Growth and
Optimization of GaInAsP/InP Material System for Quantum Well Infrared Photodetector
Applications," SPIE Conference San Jose, CA, (January 26, 2000) [http://dx.doi.org/10.1117/12.382123].
413. P. Sandvik, D. Walker, P. Kung, K. Mi, F. Shahedipour, V. Kumar, X. Zhang, J. Diaz, C. Jelen, and M.
Razeghi, "Solar-Blind AlxGa1-xN p-i-n Photodetectors grown on LEO and non-LEO GaN," SPIE
Conference San Jose, CA, Vol. 3948, pp. 265 (January 26, 2000) [http://dx.doi.org/10.1117/12.382126].
414. M. Razeghi, P. Kung, P. Sandvik, K. Mi, X. Zhang, V.P. Dravid, J. Freitas, and A. Saxler, "LEO of IIINitride on Al2O3 and Si Substrates," SPIE Conference San Jose, CA, (January 26,
2000) [http://dx.doi.org/10.1117/12.382133].
415. M. Wraback, H. Shen, P. Kung, M. Razeghi, J.C. Carrano, T. Li, and J.C. Campbell, "Ultraviolet Detector
Materials and Devices Studied by Femtosecond Nonlinear Optical Techniques," SPIE Conference San
Jose, CA, (January 26, 2000) [http://dx.doi.org/10.1117/12.382137].
416. D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X.H. Zhang, and M. Razeghi, "Solar-blind AlGaN
photodiodes with very low cutoff wavelength," Applied Physics Letters 76 (4)(January 24,
2000) [http://link.aip.org/link/?APL/76/403].
417. J.J. Lee and M. Razeghi, "Tl incorporation in InSb and lattice contraction of In1-xTlxSb," Applied
Physics Letters 76 (3) (January 17, 2000)[http://link.aip.org/link/APPLAB/v76/i3/p297/s1].
418. M. Razeghi, "Advanced Semiconductor Lasers in the 3—10 μm Wavelength Range," International
Journal of High Speed Electronics and Systems 10 (1 (January 1, 2000).
419. M. Razeghi, P. Kung, P. Sandvik, X. Zhang, K. Mi, D. Walker, V. Kumar, and J. Diaz, "Future Trends of
III-Nitrides Using Lateral Epitaxial Overgrowth," 10th International Workshop on the Physics of
Semiconductor Devices (IWPSD-99) New Delhi, India; Proceedings (December 14, 1999).
420. A. Streltsov, K.D. Moll, A. Gaeta, P. Kung, D. Walker, and M. Razeghi, "Pulse Autocorrelation
Measurements Based on Two- and Three-Photon Conductivity in a GaN Photodiode," Applied
Physics Letters 75 (24) (December 13, 1999) [http://link.aip.org/link/APPLAB/v75/i24/p3778/s1].
421. M. Razeghi, "Kinetics of Quantum States in Quantum Cascade Lasers: Device Design Principles and
fabrication," special issue of Microelectronics Journal 30 (10) (October 1, 1999).
422. H. Mohseni, J. Wojkowski, M. Razeghi, G. Brown, and W. Mitchel, "Uncooled InAs/GaSb Type-II
infrared detectors grown on GaAs substrate for the 8–12 μm atmospheric window," IEEE Journal of
Quantum Electronics 35 (7) (July 1, 1999) [http://dx.doi.org/10.1109/68.920771].
423. J.J. Lee, J.D. Kim, and M. Razeghi, "Exploration of Novel InSbBi Alloy for Uncooled Infrared
Photodetector Applications," special issue of the Journal of the Korean Physical Society 35 (July 1,
1999).
424. S. Kim, M. Erdtmann, and M. Razeghi, "Growth and characterization of InGaAs/InGaP quantum dots
for mid-infrared photodetectors," special issue of the Journal of the Korean Physical Society 35 (July 1,
1999).
425. H.J. Yi and M. Razeghi, "Theoretical and Experimental Analysis of High Power Al-free
InGaAsP/GaAs (808 nm) Laser Diodes," special issue of the Journal of the Korean Physical Society
35 (July 1, 1999).
426. B. Lane, Z. Wu, A. Stein, J. Diaz, and M. Razeghi, "InAsSb/InAsP strained-layer superlattice injection
lasers operating at 4.0 μm grown by metal-organic chemical vapor deposition," Applied Physics
Letters 74 (23) (June 7, 1999) [http://link.aip.org/link/APPLAB/v74/i23/p3438/s1].
427. M. Razeghi, P. Kung, D. Walker, E. Monroy, M. Hamilton, and P. Sandvik, "Development of Highperformance III-Nitride-based Semiconductor Devices," special issue of the Journal of the Korean
Physical Society 34 (June 1, 1999).
428. S. Slivken, A. Matlis, A. Rybaltowski, Z. Wu and M. Razeghi, "Low-Threshold 7.3 μm Quantum
Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy," Applied Physics Letters 74
(19) (May 19, 1999) [http://link.aip.org/link/APPLAB/v74/i19/p2758/s1].
429. V.I. Litvinov and M. Razeghi, "Exciton localization in group-III nitride quantum wells," Physical
Review B 59 (15) (May 15, 1999)[http://link.aps.org/doi/10.1103/PhysRevB.59.9783].
430. A. Saxler, W.C. Mitchel, P. Kung and M. Razeghi, "Aluminum gallium nitride short-period
superlattices doped with magnesium," Applied Physics Letters 74 (14) (April 9,
1999)[http://link.aip.org/link/APPLAB/v74/i14/p2023/s1].
431. D. Wu, B. Lane, H. Mohseni, J. Diaz and M. Razeghi, "High power asymmetrical
InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm," Applied Physics Letters
74 (9) (March 1, 1999) [http://link.aip.org/link/APPLAB/v74/i9/p1194/s1].
432. D.N. Hahn, G.T. Kiehne, G.K.L. Wong, J.B. Ketterson, P. Kung, A. Saxler and M. Razeghi, "Phasematched optical second-harmonic generation in GaN and AlN slab waveguides,"Journal of Applied
Physics 85 (5) (March 1, 1999) [http://link.aip.org/link/JAPIAU/v85/i5/p2497/s1].
433. C. Jelen and M. Razeghi, "AlGaInAs/InP-based Quantum Well Infrared Photodetectors," OptoElectronics Review 7 (1) (March 1, 1999).
434. J.J. Lee, J.D. Kim, and M. Razeghi, "Novel InTlSb Alloy for Uncooled Long-Wavelength Infrared
Photodetectors," Opto-Electronics Review 7 (1) (March 1, 1999).
435. M. Razeghi, "Recent Advance in Semiconductor Mid-Infrared Lasers Emitting at 3–12 μm," OptoElectronics Review 7 (1) (March 1, 1999).
436. E. Monroy, M. Hamilton, D. Walker, P. Kung, F.J. Sanchez, and M. Razeghi, "High-quality visible-blind
AlGaN p-i-n photodiodes," Applied Physics Letters 74 (8) (February 22,
1999)[http://link.aip.org/link/APPLAB/v74/i8/p1171/s1].
437. D. Walker, E. Monroy, P. Kung, J. Wu, M. Hamilton, F.J. Sanchez, J. Diaz, and M. Razeghi, "High-speed,
low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN," Applied Physics
Letters 74 (5) (February 1, 1999) [http://link.aip.org/link/APPLAB/v74/i5/p762/s1].
438. M. Razeghi, D. Wu, B. Lane, A. Rybaltowski, A. Stein, J. Diaz, and H. Yi, "Recent achievement in MIR
high power injection laser diodes (3 to 5 μm)," LEOS Newsletter 13 (1)(February 1, 1999).
439. M. Razeghi, "Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century," SPIE
Conference San Jose, CA, (January 27, 1999)[http://dx.doi.org/10.1117/12.344549].
440. C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi, "Multi-color 4–20 μm In-P-based Quantum Well
Infrared Photodetectors," SPIE Conference San Jose, CA, (January 27,
1999)[http://dx.doi.org/10.1117/12.344552].
441. D. Walker, P. Kung, P. Sandvik, J. Wu, M. Hamilton, I.H. Lee, J. Diaz, and M. Razeghi, "AlxGa1-xN p-i-n
Photodiodes on Sapphire Substrates," SPIE Conference San Jose, CA, (January 27,
1999) [http://dx.doi.org/10.1117/12.344556].
442. A. Saxler, M. Ahoujja, W.C. Mitchel, P. Kung, D. Walker, and M. Razeghi, "Electrical Characterization
of AlxGa1-xN for UV Photodetector Applications," SPIE Conference San Jose, CA, (January 27,
1999) [http://dx.doi.org/10.1117/12.344558].
443. P. Kung, D. Walker, P. Sandvik, M. Hamilton, J. Diaz, I.H. Lee and M. Razeghi, "Schottky MSM
Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial Overgrowth," SPIE
Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344586].
444. J.D. Kim, H. Mohseni, J.S. Wojkowski, J.J. Lee and M. Razeghi, "Growth of InAsSb Alloys on GaAs
and Si Substrates for Uncooled Infrared Photodetector Applications," SPIE Conference San Jose, CA,
(January 27, 1999) [http://dx.doi.org/10.1117/12.344571].
445. J.S. Wojkowski, H. Mohseni, J.D. Kim, and M. Razeghi, "Demonstration of InAsSb/AlInSb Double
Heterostructure Detectors for Room Temperature Operation in the 5–8 μm Wavelength
Range," SPIE Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344573].
446. S. Kim, M. Erdtmann, and M. Razeghi, "Characteristics of Self-Assembled InGaAs/InGaP Quantum
Dot Mid-Infrared Photoconductive Detectors Grown by Low Pressure MOCVD," SPIE
Conference San Jose, CA, (January 27, 1999) [http://dx.doi.org/10.1117/12.344572].
447. H. Ohsato, T. Kato, T. Okuda and M. Razeghi, "Internal Stress Around Micropipes in 6H-SiC
Substrates," SPIE Conference San Jose, CA, (January 27, 1999)[http://dx.doi.org/10.1117/12.344576].
448. P. Kung, D. Walker, M. Hamilton, J. Diaz, and M. Razeghi, "Lateral epitaxial overgrowth of GaN films
on sapphire and silicon substrates," Applied Physics Letters 74 (4) (January 25,
1999) [http://link.aip.org/link/?APPLAB/74/570/1].
449. S. Slivken, V. Litvinov, M. Razeghi, and J.R. Meyer, "Relaxation kinetics in quantum cascade
laser," Journal of Applied Physics 85 (2) (January 15,
1999)[http://link.aip.org/link/JAPIAU/v85/i2/p665/s1].
450. S. Slivken, A. Matlis, C. Jelen, A. Rybaltowski, J. Diaz, and M. Razeghi, "High Temperature
Continuous Wave Operation of ~8 μm Quantum Cascade Lasers," Applied Physics Letters 74
(2) (January 11, 1999) [http://link.aip.org/link/APPLAB/v74/i2/p173/s1].
451. I.H. Lee, J.J. Lee, P. Kung, F.J. Sanchez, and M. Razeghi, "Band-gap narrowing and potential
fluctuation in Si-doped GaN," Applied Physics Letters 74 (1) (January 4,
1999)[http://link.aip.org/link/APPLAB/v74/i1/p102/s1].
452. H. Mohseni, V.I. Litvinov and M. Razeghi, "Interface-induced Suppression of the Auger
Recombination in Type-II InAs/GaSb Superlattices," Physical Review B 58 (23) (December 15, 1998) [
http://link.aps.org/doi/10.1103/PhysRevB.58.15378].
453. M. Razeghi, "Current Status and Future Trends of Infrared Detectors," Opto-Electronics Review 6
(3) (December 1, 1998).
454. D. Wu and M. Razeghi, "Recent development in Sb-based MWIR interband laser diodes," OptoElectronics Review 6 (3) (December 1, 1998).
455. S. Slivken, V.I. Litvinov, M. Razeghi, and J.R. Meyer, "Relaxation kinetics in mid-infrared quantum
cascade lasers," Opto-Electronics Review 6 (3) (December 1, 1998).
456. J.D. Kim and M. Razeghi, "Investigation of InAsSb Infrared Photodetectors for Near Room
Temperature Operation," Opto-Electronics Review 6 (3) (December 1, 1998).
457. M. Razeghi, S. Slivken, A. Matlis, A. Rybaltowski, C. Jelen, and J. Diaz, "Low Threshold Quantum
Cascade Lasers Grown by GSMBE," LEOS Newsletter 12 (6) (December 1, 1998).
458. M. Razeghi, P. Kung, D. Walker, M. Hamilton, and P. Sandvik, "Development of High-performance IIINitride-based Semiconductor Devices," International Symposium on the Physics of Semiconductors and
Applications (ISPSA-98) Seoul, Korea; Proceedings (November 6, 1998).
459. H. Mohseni and M. Razeghi, "Growth and Characterization of InAs/GaSb Type-II Superlattice for 8–
12 μm Room Temperature Detectors," Sixth International Symposium on Long Wavelength Infrared
Detectors and Arrays Electrochemical Society Fall Meeting, Boston, MA; Proceedings 98 (21) (November
5, 1998).
460. S. Kim and M. Razeghi, "Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum
Dots for Mid-Infrared Photoconductive Detector by LP-MOCVD," Sixth International Symposium on
Long Wavelength Infrared Detectors and Arrays Electrochemical Society Fall Meeting, Boston, MA;
Proceedings 98 (21) (November 5, 1998).
461. M. Razeghi, P. Kung, D. Walker, M. Hamilton, and J. Diaz, "High quality LEO growth and
characterization of GaN films on Al2O3 and Si substrates," SPIE International Conference on Solid
State Crystals Zakopane, Poland; Proceedings 3725 (October 12,
1998) [http://dx.doi.org/10.1117/12.344718].
462. M. Razeghi, J. Wojkowski, J.D. Kim, H. Mohseni and J.J. Lee, "Uncooled long-wavelength infrared
photodetectors using narrow bandgap semiconductors," Symposium on Compound
Semiconductors Nara, Japan; Proceedings (October 12, 1998).
463. C. Jelen, S. Slivken, V. Guzman, M. Razeghi, and G. Brown, "InGaAlAs/InP Quantum Well Infrared
Photodetectors for 8-20 μm Wavelengths," IEEE Journal of Quantum Electronics 34 (10) (October 1,
1998).
464. S. Kim, H. Mohseni, M. Erdtmann, E. Michel, C. Jelen and M. Razeghi, "Growth and characterization
of InGaAs/InGaP quantum dots for mid-infrared photoconductive detector,"Applied Physics Letters
73 (7) (August 17, 1998) [http://link.aip.org/link/APPLAB/v73/i7/p963/s1].
465. J.J. Lee, J.D. Kim, and M. Razeghi, "Room temperature operation of 8-12 μm InSbBi infrared
photodetectors on GaAs substrates," Applied Physics Letters 73 (5) (August 3,
1998)[http://link.aip.org/link/APPLAB/v73/i5/p602/s1].
466. C. Jelen, S. Slivken, T. David, M. Razeghi and G. J. Brown, "Noise performance of InGaAs/InP
quantum well infrared photodetectors," IEEE Journal of Quantum Electronics 34 (7)(July 7, 1998).
467. D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz and M. Razeghi, "Solar blind GaN p-i-n
photodiodes," Applied Physics Letters 72 (25) (June 22,
1998)[http://link.aip.org/link/APPLAB/v72/i25/p3303/s1].
468. S. Slivken and M. Razeghi, "8.5 μm Room Temperature Quantum Cascade Lasers Grown by GasSource Molecular Beam Epitaxy," SPIE Conference San Jose, CA, (January 28,
1998) [http://dx.doi.org/10.1117/12.298215].
469. M. Razeghi, A. Saxler, P. Kung, D. Walker, X. Zhang, A. Rybaltowski, Y. Xiao, H.J. Yi and J.
Diaz, "Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers
grown by low-pressure metalorganic chemical vapor deposition," SPIE Conference San Jose, CA, Vol.
3284, pp. 113 (January 28, 1998)[http://dx.doi.org/10.1117/12.304463].
470. A. Rogaski and M. Razeghi, "Narrow gap semiconductor photodiodes," SPIE Conference San Jose, CA,
(January 28, 1998).
471. P. Kung, X. Zhang, D. Walker, A. Saxler, and M. Razeghi, "GaN p-i-n photodiodes with high visible-toultraviolet rejection ratio," SPIE Conference San Jose, CA, (January 28,
1998)[http://dx.doi.org/10.1117/12.304484].
472. C. Jelen, S. Slivken, T. David, G. Brown, and M. Razeghi, "Responsivity and Noise Performance of
InGaAs/InP Quantum Well Infrared Photodetectors," SPIE Conference San Jose, CA, (January 28,
1998) [http://dx.doi.org/10.1117/12.304470].
473. H. Mohseni, E. Michel, M. Razeghi, W. Mitchel, and G. Brown, "Growth and characterization of
InAs/GaSb Type-II superlattices for long-wavelength infrared detectors," SPIE Conference San Jose,
CA, (January 28, 1998) [http://dx.doi.org/10.1117/12.304497].
474. H.J. Lee, M.G. Cheong, E.K. Suh, and M. Razeghi, "Electrical Transport Properties of Highly Doped
N-type GaN Epilayers," SPIE Conference San Jose, CA, (January 28,
1998)[http://dx.doi.org/10.1117/12.304496].
475. M. Razeghi, A. Saxler, P. Kung, D. Walker, X. Zhang, K.S. Kim, H.R. Vydyanath, J. Solomon, M.
Ahoujja, and W.C. Mitchel, "New Developments in III-Nitride Material and Device
Applications," Physics of Semiconductor Devices Vol. 1, V. Kumar and S.K. Agarwal eds.,Narosa
Publishing House, New Delhi, India, (January 1, 1998).
476. M. Razeghi, "Infrared Photodetectors and Imaging Arrays Using Advanced III-V Materials," Physics
of Semiconductor Devices Vol. 2 (V. Kumar and S.K. Agarwal eds.), Narosa Publishing House, New Delhi,
India (January 1, 1998).
477. P. Kung, A. Saxler, D. Walker, A. Rybaltowski, X. Zhang, J. Diaz, and M. Razeghi, "GaInN/GaN MultiQuantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor
Deposition," MRS Internet Journal of Nitride Semiconductor Research 3 (1) (January 1,
1998) [http://nsr.mij.mrs.org/3/1/].
478. T. Kato, P. Kung, A. Saxler, C.J. Sun, H. Ohsato, M. Razeghi and T. Okuda, "Simultaneous growth of
two differently oriented GaN epilayers on (11.0) sapphire (II) a growth model of (00.1) and (10.0)
GaN," Journal of Crystal Growth 183 (January 1, 1998).
479. E. Michel and M. Razeghi, "Recent advances in Sb-based materials for uncooled infrared
photodetectors," Opto-Electronics Review 6 (1) (January 1, 1998).
480. J.J. Lee and M. Razeghi, "Exploration of InSbBi for uncooled long-wavelength infrared
photodetectors," Opto-Electronics Review 6 (1) (January 1, 1998).
481. M. Razeghi and H. Yi, "High-Power Al-free InGaAsP/GaAs Near-Infrared Semiconductor
Lasers," Opto-Electronics Review 6 (2) (January 1, 1998).
482. Manijeh Razeghi, "GaN-Based Laser Diodes," International Journal of High Speed Electronics and
Systems (IJHSES) Volume: 9, Issue: 4, pp. 1007-1080 (1998) (January 1,
1998)[http://dx.doi.org/10.1142/S0129156498000415].
483. C. Jelen and M. Razeghi, "InP-based Multi-Spectral Quantum Well Infrared
Photodetectors," International Semiconductor Device Research Symposium (ISDRS 97) Charlottesville,
VA; Proceedings (December 11, 1997).
484. S. Slivken and M. Razeghi, "Mid-Infrared Quantum Cascade Lasers Grown by Gas-Source Molecular
Beam Epitaxy," International Semiconductor Device Research Symposium (ISDRS 97) Charlottesville,
VA; Proceedings (December 11, 1997).
485. A. Saxler, D. Walker, P. Kung, X. Zhang, M. Razeghi, J. Solomon, W. Mitchel, and H.R.
Vydyanath, "Comparison of Trimethylgallium and Triethylgallium for the Growth of GaN,"Applied
Physics Letters 71 (22) (December 1, 1997) [http://link.aip.org/link/APPLAB/v71/i22/p3272/s1].
486. J. Diaz, H. Yi, M. Razeghi and G.T. Burnham, "Long-term reliability of Al-free InGaAsP/GaAs λ = 808
nm) lasers at high-power high-temperature operation," Applied Physics Letters 71 (21) (November 24,
1997) [http://link.aip.org/link/APPLAB/v71/i21/p3042/s1].
487. M. Razeghi, "Reliable High-Power Uncoated Al-free InGaAsP/GaAs Lasers for Cost-Sensitive
Optical Communication and Processing Applications," SPIE Conference Dallas, TX, (November 4,
1997) [http://dx.doi.org/10.1117/12.300921].
488. S. Slivken, C. Jelen, A. Rybaltowski, J. Diaz and M. Razeghi, "Gas-Source Molecular Beam Epitaxy
Growth of 8.5 μm Quantum Cascade Laser," Applied Physics Letters 71 (18)(November 1,
1997) [http://link.aip.org/link/APPLAB/v71/i18/p2593/s1].
489. A. Rybaltowski, Y. Xiao, D. Wu, B. Lane, H. Yi, H. Feng, J. Diaz, and M. Razeghi, "High power
InAsSb/InPAsSb/InAs mid-infrared lasers," Applied Physics Letters 71 (17) (October 27,
1997) [http://link.aip.org/link/APPLAB/v71/i17/p2430/s1].
490. J.J. Lee, J.D. Kim, and M. Razeghi, "Long-Wavelength Infrared Photodetectors Based on InSbBi
Grown on GaAs Substrates," Applied Physics Letters 71 (16) (October 20,
1997)[http://link.aip.org/link/APPLAB/v71/i16/p2298/s1].
491. S. Slivken, C. Jelen, J. Diaz, and M. Razeghi, "High-Quality Quantum Cascade Lasers Grown by
GSMBE," LEOS Newsletter 11 (5) (October 1, 1997).
492. M. Razeghi, "The Center for Quantum Devices - extending the scope of photonics," III-Vs Review 10
(6) (October 1, 1997).
493. M. Tadic, C. Jelen, S. Slivken, and M. Razeghi, "Photoresponse of InGaAsP-based p-doped quantum
well infrared photodetectors," 21st International Conference on Microelectronics (MIEL97) Yugoslavia;
Proceedings - Vol. 1 (September 14, 1997).
494. M. Tadic, C. Jelen, S. Slivken, and M. Razeghi, "In-plane electron dynamics and hot electron effects in
a quantum cascade laser," 21st International Conference on Microelectronics (MIEL97) Yugoslavia;
Proceedings - Vol. 1 (September 14, 1997).
495. H. Mohseni, E. Michel, J. Sandven, M. Razeghi, W. Mitchel, and G. Brown, "Growth and
characterization of InAs/GaSb photoconductors for long wavelength infrared range,"Applied Physics
Letters 71 (10) (September 8, 1997) [http://dx.doi.org/10.1063/1.119906 ].
496. E. Michel, H. Mohseni, J.D. Kim, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, R. Bredthauer, P. Vu, W.
Mitchel, and M. Ahoujja, "High Carrier Lifetime InSb Grown on GaAs Substrates," Applied Physics
Letters 71 (8 (August 25, 1997) [http://dx.doi.org/10.1063/1.119731 ].
497. J.K. Lee, Y.H. Cho, B.D. Choe, K.S. Kim, H.I. Jeon, H. Lim and M. Razeghi, "Schottky barrier heights
and conduction-band offsets of In1-xGaxAs1-yPy lattice matched to GaAs,"Applied Physics Letters 71
(7) (August 18, 1997) [http://link.aip.org/link/APPLAB/v71/i7/p912/s1].
498. H. Yi and M. Razeghi, "Generalized k·p perturbation theory for atomic-scale superlattices," Physical
Review B 56 (7) (August 15, 1997)[http://link.aps.org/doi/10.1103/PhysRevB.56.3933].
499. K.S. Kim, A. Saxler, P. Kung, M. Razeghi, and K.Y. Lim, "Determination of of Band Gap Energy of
Al1-xInxN Grown by Metal Organic Chemical Vapor Deposition in the High Al Composition
Regime," Applied Physics Letters 71 (6) (August 11,
1997) [http://link.aip.org/link/APPLAB/v71/i6/p800/s1].
500. A. Saxler, P. Kung, X. Zhang, D. Walker, J. Solomon, W.C. Mitchel and M. Razeghi, "GaN Grown Using
Trimethylgallium and Triethylgallium," Defects in Semiconductors Aveiro, Portugal; Materials Science
Forum, 258-263 (July 1, 1997).
501. A. Saxler, P. Kung, X. Zhang, D. Walker, J. Solomon, M. Ahoujja, W.C. Mitchel, H.R. Vydyanath, and M.
Razeghi, "GaN Doped with Sulfur," Defects in Semiconductors Aveiro, Portugal; Materials Science
Forum, 258-263 (July 1, 1997).
502. A. Saxler, K.S. Kim, D. Walker, P. Kung, X. Zhang, G.J. Brown, W.C. Mitchel and M.
Razeghi, "Electroluminescence of III-Nitride Double Heterostructure Light Emitting Diodes with
Silicon and Magnesium Doped InGaN," Defects in Semiconductors Aveiro, Portugal; Materials Science
Forum, 258-263 (July 1, 1997).
503. M. Erdtmann, S. Kim and M. Razeghi, "Localized Epitaxy for Vertical Cavity Surface Emitting Laser
Applications," Defects in Semiconductors Aveiro, Portugal; Materials Science Forum, 258-263 (July 1,
1997).
504. S. Kim, M. Erdtmann, and M. Razeghi, "The Long Wavelength Luminescence Observation from the
Self-Organized InGaAs Quantum Dots Grown on (100) GaAs Substrate by Metalorganic Chemical
Vapor Deposition," Defects in Semiconductors Aveiro, Portugal; Materials Science Forum, 258-263 (July
1, 1997).
505. M. Razeghi, P. Kung, X. Zhang, D. Walker, A. Saxler, K.Y. Lim and K.S. Kim, "Structural and
Microstructural Characterization of GaN Thin Films and GaN-based Heterostructures Grown on
Sapphire Substrates," Journal of the Korean Physical Society Proceedings Supplement 30 (S1-S6) (June
30, 1997).
506. H. Yi, A. Rybaltowski, J. Diaz, D. Wu, B. Lane, Y. Xiao, and M. Razeghi, "Stability of far fields in
double heterostructure and multiple quantum well InAsSb/InPAsSb/InAs midinfrared
lasers," Applied Physics Letters 70 (24) (June 16,
1997) [http://link.aip.org/link/APPLAB/v70/i24/p3236/s1].
507. J.J. Lee, J.D. Kim, and M. Razeghi, "Growth and characterization of InSbBi for long wavelength
infrared photodetectors," Applied Physics Letters 70 (24) (June 16,
1997)[http://link.aip.org/link/APPLAB/v70/i24/p3266/s1].
508. W. Pan, D. Shahar, D.C. Tsui, H.P. Wei, and M. Razeghi, "Quantum Hall liquid-to-insulator transition
in In1-xGaxAs/InP heterostructures," Physical Review B 55 (23) (June 15,
1997) [http://link.aps.org/doi/10.1103/PhysRevB.55.15431].
509. B. Lane, D. Wu, H.J. Yi, J. Diaz, A. Rybaltowski, S. Kim, M. Erdtmann, H. Jeon and M. Razeghi, "Study
on the effects of minority carrier leakage in InAsSb/InPAsSb double heterostructure," Applied
Physics Letters 70 (11) (April 17, 1997) [http://link.aip.org/link/APPLAB/v70/i11/p1447/s1].
510. D. Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, and M. Razeghi, "AlxGa1-xN (0 ≤ x ≤ 1) Ultraviolet
Photodetectors Grown on Sapphire by Metal-organic Chemical-vapor Deposition," Applied Physics
Letters 70 (8) (February 24, 1997) [http://dx.doi.org/10.1063/1.118450].
511. M. Razeghi and A. Rogalski,, "AlGaN ultraviolet detectors," SPIE Conference San Jose, CA, (February
12, 1997) [http://dx.doi.org/10.1117/12.271196].
512. D. Walker, X. Zhang, A. Saxler, P. Kung, J. Xu, and M. Razeghi, "Intrinsic AlGaN photodetectors for
the entire compositional range," SPIE Conference San Jose, CA, (February 12,
1997) [http://dx.doi.org/10.1117/12.271200].
513. C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi, "Very Long Wavelength GaAs/GaInP Quantum Well
Infrared Photodetectors," SPIE Conference San Jose, CA, (February 12,
1997) [http://dx.doi.org/10.1117/12.271184].
514. J.D. Kim, E. Michel, H. Mohseni, J. Wojkowski, J.J. Lee and M. Razeghi, "Sb-based infrared materials
and photodetectors for the near room temperature applications," SPIE Conference San Jose, CA, Vol.
2999, pp. 55 (February 12, 1997) [http://dx.doi.org/10.1117/12.271212 ].
515. H. Ohsato and M. Razeghi, "Growth models of GaN thin films based on crystal chemistry: Hexagonal
and cubic GaN on Si substrates," SPIE Conference San Jose, CA, (February 12, 1997).
516. M. Razeghi, H. Yi, J. Diaz, S. Kim, and M. Erdtmann, "Temperature insensitivity of the Al-free
InGaAsP/GaAs lasers for λ = 808 and 908 nm," SPIE Conference San Jose, CA; Proceedings 3001
(February 12, 1997) [http://dx.doi.org/10.1117/12.273792].
517. D. Wu, E. Kaas, J. Diaz, B. Lane, A. Rybaltowski, H.J. Yi, and M. Razeghi, "InAsSbP/InAsSb/InAs
Diode Lasers Emitting at 3.2 μm Grown by Metalorganic Chemical Vapor Deposition," IEEE
Photonics Technology Letters 9 (2) (February 1, 1997).
518. B. Lane, D. Wu, A. Rybaltowski, H. Yi, J. Diaz, and M. Razeghi, "Compressively-strained multiple
quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor
deposition," Applied Physics Letters 70 (4) (January 27,
1997) [http://link.aip.org/link/APPLAB/v70/i4/p443/s1].
519. C. Jelen, S. Slivken, J. Hoff, M. Razeghi, and G. Brown, "Aluminum free GaInP/GaAs Quantum Well
Infrared Photodetectors for Long Wavelength Detection," Applied Physics Letters 70 (3) (January 20,
1997) [http://link.aip.org/link/APPLAB/v70/i3/p360/s1].
520. J. Diaz, G. Lukas, D. Wu, S. Kim, M. Erdtmann, E. Kaas, and M. Razeghi, "InAsSbP/InAsSb/InAs Laser
Diodes λ = 3.2 μm) Grown by Low-Pressure Metalorganic Chemical Vapor Deposition," Applied
Physics Letters 70 (1) (January 6, 1997) [http://link.aip.org/link/APPLAB/v70/i1/p40/s1].
521. M. Razeghi, J.D. Kim, C. Jelen, S. Slivken, E. Michel, H. Mohseni, J.J. Lee, J. Wojkowski, K.S. Kim, H.I.
Jeon, and J. X, "Infrared Imaging Arrays Using Advanced III-V Materials and technology," IEEE
Proceedings Advanced Workshop on Frontiers in Electronics (WOFE), Tenerife, Spain; (January 6,
1997) [http://dx.doi.org/10.1109/WOFE.1997.621147].
522. H. Ohsato, T. Kato, M. Razeghi, and T. Okuda, "Epitaxial growth models of hexagonal and cubic GaN
on (100) Si substrates," Bulletin of the Ceramic Society of Japan Ceramics Japan (January 1, 1997).
523. T. Kato, P. Kung, A. Saxler, C.J. Sun, H. Ohsato, M. Razeghi and T. Okuda, "Morphology of Twinned
GaN Grown on (11.0) Sapphire Substrates," Solid-State Electronics 41 (2)(January 1, 1997).
524. T. Kato, H. Ohsato, T. Okuda, P. Kung, A. Saxler, C.J. Sun, and M. Razeghi, "Simultaneous growth of
two different oriented GaN epilayers on (11.0) sapphire (I) morphology and orientation," Journal of
Crystal Growth 173 (January 1, 1997).
525. P. Kung, X. Zhang, A. Saxler, D. Walker, M. Razeghi, W. Qian, and V.P. Dravid, "MOCVD Growth of
High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with Dislocation Density less than
107cm-2," Journal of European Ceramics Society 17 (January 1, 1997).
526. C. Besikci, Y. Civan, S. Ozder, O. Sen, C. Jelen, S. Slivken, and M. Razeghi, "Gas Source Molecular
Beam Epitaxy Growth and Characterization of Ga 0.51In0.49P/InxGa1-xAs/GaAs Modulation-doped
Field-effect Transistor Structures," Semiconductor Science Technology 12 (January 1,
1997) [http://dx.doi.org/10.1088/0268-1242/12/11/025].
527. M. Razeghi, J. Diaz, H.J. Yi, D. Wu, B. Lane, A. Rybaltowski, Y. Xiao, and H. Jeon, "High Power
InAsSb/InAsSbP Laser Diodes Emitting at 3-5 μm Range," Materials Research Society
Symposium (December 2, 1996).
528. C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi, "GaAs/GaInP Quantum Well Intersubband
Photodetectors for Focal Plane Array Infrared Imaging," Materials Research Society
Symposium "Infrared Applications of Semiconductors-Materials, Processing and Devices"; Proceedings
450 (December 2, 1996).
529. E. Michel, H. Mohseni, J. Wojkowski, J. Sandven, J. Xu, M. Razeghi, P. Vu, R. Bredthauer, W. Mitchel,
and M. Ahoujja, "InSb Detectors and Focal Plane Arrays on GaAs, Si, and
Al2O3 Substrates," Materials Research Society Symposium (December 2, 1996).
530. A. Saxler, M.A. Capano, W.C. Mitchel, P. Kung, X. Zhang, D. Walker and M. Razeghi, "High Resolution
X-ray Diffraction of GaN Grown on Sapphire Substrates," Materials Research Society Symposium "IIIV Nitrides"; Proceedings 449 (December 2, 1996).
531. P. Kung, A. Saxler, D. Walker, X. Zhang, R. Lavado, K.S. Kim, and M. Razeghi, "AlGaN Based
Materials and Heterostructures," Materials Research Society Symposium "III-V Nitrides"; Proceedings
449 (December 2, 1996).
532. X. Zhang, P. Kung, A. Saxler, D. Walker, and M. Razeghi, "Observation of Room Temperature
Surface-Emitting Stimulated Emission from GaN:Ge by Optical pumping," Journal of Applied
Physics 80 (11) (December 1, 1996) [http://link.aip.org/link/JAPIAU/v80/i11/p6544/s1].
533. H. Yi, J. Diaz, B. Lane, and M. Razeghi, "Optical losses of Al-free lasers for λ = 0.808 and 0.98
μm," Applied Physics Letters 69 (20) (November 11,
1996)[http://link.aip.org/link/APPLAB/v69/i20/p2983/s1].
534. J.R. Hoff, M. Razeghi and G. Brown, "Effect of the spin split-off band on optical absorption in p-type
Ga1 xInxAsyP1-y quantum-well infrared detectors," Physical Review B 54 (15) (October 15,
1996) [http://link.aps.org/doi/10.1103/PhysRevB.54.10773].
535. M. Razeghi, X. Zhang, P. Kung, A. Saxler, D. Walker, K.Y. Lim, and K.S. Kim, "Recent advances in IIINitride materials, characterization and device applications," SPIE Conference: Solid State Crystals in
Optoelectronics and Semiconductor Technology; Proceedings 3179 (October 7,
1996) [http://dx.doi.org/10.1117/12.276195].
536. P. Kung, A. Saxler, X. Zhang, D. Walker, R. Lavado, and M. Razeghi, "Metalorganic chemical vapor
deposition of monocrystalline GaN thin films on β-LiGaO2substrates," Applied Physics Letters 69
(14) (September 30, 1996) [http://dx.doi.org/10.1063/1.116898].
537. M. Razeghi, C. Jelen, S. Slivken and J. Hoff, "III-V interband and intraband far-infrared
detectors," 23rd International Symposium on Compound Semiconductors St. Petersburg, Russia;
Proceedings 155 (5) (September 23, 1996).
538. S. Kim, M. Erdtmann, D. Wu, E. Kaas, H. Yi, J. Diaz, and M. Razeghi, "Photoluminescence study of
InAsSb/InAsSbP heterostructures grown by low-pressure metalorganic chemical vapor
deposition," Applied Physics Letters 69 (11) (September 9,
1996) [http://link.aip.org/link/APPLAB/v69/i11/p1614/s1].
539. J.D. Kim, E. Michel, S. Park, J. Xu, S. Javadpour and M. Razeghi, "Room Temperature Operation of
InTlSb Infrared Photodetectors on GaAs," Applied Physics Letters 69 (3)(August 15,
1996) [http://dx.doi.org/10.1063/1.118054].
540. X. Zhang, D. Walker, A. Saxler, P. Kung, J. Xu, and M. Razeghi, "Observation of inversion layers at
AlN-Si interfaces fabricated by metal organic chemical vapour deposition,"IEEE Electronic Letters 32
(17) (August 15, 1996).
541. X. Zhang, D. Walker, A. Saxler, P. Kung, J. Xu, and M. Razeghi, "Demonstration of an Electronic
Grade Ti/AlN/Si Metal-Insulator-Semiconductor Capacitor," International Conference on Solid State
Devices and Materials (SSDM '96) Yokohama, Japan; Proceedings (August 1, 1996).
542. E. Michel, J. Kim, J. Xu, S. Javadpour, I. Ferguson, and M. Razeghi, "The Molecular Beam Epitaxial
Growth of InSb on (111) GaAs," Applied Physics Letters 69 (2) (July 8,
1996)[http://dx.doi.org/10.1063/1.117376 ].
543. H.J. Yi, J. Diaz, I. Eliashevich, G. Lukas, S. Kim, D. Wu, M. Erdtmann, C. Jelen, S. Slivken, L.J. Wang,
and M. Razeghi, "Comparison of Gain and Threshold Current Density for InGaAsP/GaAs λ = 808
nm) Lasers with Different Quantum-Well Thickness," Journal of Applied Physics 79 (11) (July 1,
1996) [http://link.aip.org/link/JAPIAU/v79/i11/p8832/s1].
544. M. Razeghi and A. Rogalski, "Semiconductor ultraviolet detectors," Journal of Applied Physics Applied
Physics Review 79 (10) (May 15, 1996)[http://link.aip.org/link/JAPIAU/v79/i10/p7433/s1].
545. E. Michel, J. Xu, J.D. Kim, I. Ferguson, and M. Razeghi, "InSb Infrared Photodetectors on Si
Substrates Grown by Molecular Beam Epitaxy," IEEE Photonics Technology Letters 8 (5) pp.
673 (May 1, 1996) [http://dx.doi.org/10.1109/68.491591].
546. D. Walker, X. Zhang, P. Kung, A. Saxler, S. Javadpour, J. Xu, and M. Razeghi, "AlGaN ultraviolet
photoconductors grown on sapphire," Applied Physics Letters 68 (15) (April 8,
1996) [http://link.aip.org/link/APPLAB/v68/i15/p2100/s1].
547. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, "Aluminum nitride films on different
orientations of sapphire and silicon," Journal of Applied Physics79 (5) (March 1,
1996) [http://link.aip.org/link/JAPIAU/v79/i5/p2439/s1].
548. J. Hoff, C. Jelen, S. Slivken, G.J. Brown, and M. Razeghi, "Optical Absorption and Photoresponse in
fully Quaternary p-type Quantum Well Detectors," SPIE Photonics West '96 Photodetectors: Materials
and Devices; Proceedings 2685 (January 27, 1996) [http://dx.doi.org/10.1117/12.237713].
549. E. Michel, J.D. Kim, S. Park, J. Xu, I. Ferguson, and M. Razeghi, "Sb-based infrared materials and
photodetectors for the 3-5 and 8-12 μm range," SPIE Photonics West '96 'Photodetectors: Materials and
Devices'; Proceedings 2685 (January 27, 1996) [http://dx.doi.org/10.1117/12.237694 ].
550. M. Razeghi and A. Rogalski, "Semiconductor ultraviolet detectors," SPIE Photonics West '96
Photodetectors: Materials and Devices; Proceedings 2685 (January 27,
1996)[http://dx.doi.org/10.1117/12.237695].
551. P. Kung, A. Saxler, X. Zhang, D. Walker, M. Razeghi, and M. Ulmer, "GaN, GaAlN, and AlN for use in
UV Detectors for Astrophysics: An Update," SPIE Photonics West '96 Photodetectors: Materials and
Devices; Proceedings 2685 (January 27, 1996) [http://dx.doi.org/10.1117/12.237696].
552. A. Saxler, D. Walker, X. Zhang, P. Kung, J. Xu, and M. Razeghi, "UV photodetectors based on AlxGa1xN grown by MOCVD," SPIE Photonics West '96 Photodetectors: Materials and Devices; Proceedings
2685 (January 27, 1996) [http://dx.doi.org/10.1117/12.237697].
553. J.D. Kim, D. Wu, J. Wojkowski, J. Piotrowski, J. Xu, and M. Razeghi, "Long-Wavelength InAsSb
Photoconductors Operated at Near Room Temperatures (200-300 K)," Applied Physics Letters. 68 (1),
(January 1, 1996) [http://link.aip.org/link/APPLAB/v68/i1/p99/s1].
554. J. Diaz, H. Yi, C. Jelen, S. Kim, S. Slivken, I. Eliashevich, M. Erdtmann, D. Wu, G. Lukas, and M.
Razeghi, "High-Temperature Reliability of Aluminum-free 980nm and 808nm Laser
Diodes," International Symposium on Compound Semiconductors (ISCS-22) Cheju Island, Korea;
Compound Semiconductors 145 (8) (January 1, 1996).
555. M. Razeghi, J.D. Kim, S.J. Park, Y.H. Choi, D. Wu, E. Michel, J. Xu, and E. Bigan, "New Infrared
Materials and Detectors," International Symposium on Compound Semiconductors (ISCS-22) Cheju
Island, Korea; Compound Semiconductors 145 (8) (January 1, 1996).
556. J. Hoff, J. Piotrowski, E. Bigan, M. Razeghi, and G.J. Brown, "Background limited performance in pdoped quantum well intersubband photodetectors," International Symposium on Compound
Semiconductors (ISCS-22) Cheju Island, Korea; Compound Semiconductors 145 (8) (January 1, 1996).
557. D. Walker, P. Kung, A. Saxler, X. Zhang, and M. Razeghi, "GaN Based Semiconductors for Future
Optoelectronics," International Symposium on Compound Semiconductors (ISCS-22) Cheju Island, Korea;
Compound Semiconductors 145 (8) (January 1, 1996).
558. M. Razeghi, J. Hoff, M. Erdtmann, S. Kim, D. Wu, E. Kaas, C. Jelen, S. Slivken, I. Eliashevich, J. Diaz, E.
Bigan, G.J. Brown, S. Javadpour, "MOCVD Growth of Ga1-xInxAsyP1-y-GaAs Quantum
Structures," NATO 2nd International Workshop on Heterostructures Epitaxy and Devices (HEAD '95)
Smolenice Castle Slovakia; Heterostructure Epitaxy and Devices (January 1, 1996).
559. A. Rogalski and M. Razeghi, "Semiconductor ultraviolet photodetectors," Opto-Electronics Review 4
(1/2) (January 1, 1996).
560. P. Kung, X. Zhang, D. Walker, A. Saxler, J. Piotrowski, A. Rogalski, and M. Razeghi, "Kinetics of
photoconductivity in n-type GaN photodetector," Applied Physics Letters 67 (25)(December 18,
1995) [http://link.aip.org/link/APPLAB/v67/i25/p3792/s1].
561. J.M. Redwing, J.S. Flynn, M.A. Tischler, W. Mitchel, and A. Saxler, "MOVPE Growth of High Electron
Mobility AlGaN/GaN Heterostructures," Proceedings of Materials Research Society Boston, MA
Gallium Nitride and related Materials; Proceedings 395 (November 27, 1995).
562. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, "The Microstructural Study of Aluminum
Nitride Thin Films: Epitaxy on the Two Orientations of Sapphire and Texturing on Si," Proceedings
of Materials Research Society Boston, MA; Gallium Nitride and related Materials; Proceedings 395
(November 27, 1995).
563. D. Walker, X. Zhang, P. Kung, A. Saxler, J. Xu and M. Razeghi, "Spectral response on GaN p-n
junction photovoltaic structures," Proceedings of Materials Research Society Boston, MA; Gallium
Nitride and related Materials; Proceedings 395 (November 27, 1995).
564. X. Zhang, P. Kung, D. Walker, A. Saxler, and M. Razeghi, "Growth of GaN without yellow
luminescence," Proceedings of Materials Research Society Boston, MA; Gallium Nitride and related
Materials; Proceedings 395 (November 27, 1995).
565. J.D. Kim, S. Kim, D. Wu, J. Wojkowski, J. Xu, J. Piotrowski, E. Bigan, and M. Razeghi, "8-13 μm
InAsSb heterojunction photodiode operating at near room temperature," Applied Physics Letters 67
(18) (October 30, 1995) [http://link.aip.org/link/APPLAB/v67/i18/p2645/s1].
566. X. Zhang, P. Kung, D. Walker, J. Piotrowski, A. Rogalski, A. Saxler, and M. Razeghi, "Photovoltaic
effects in GaN structures with p-n junction," Applied Physics Letters 67 (14)(October 2,
1995) [http://link.aip.org/link/APPLAB/v67/i14/p2028/s1].
567. X. Zhang, P. Kung, A. Saxler, D. Walker, T.C. Wang, and M. Razeghi, "Growth of AlxGa1-xN:Ge on
sapphire and silicon substrates," Applied Physics Letters 67 (12) (September 18,
1995) [http://dx.doi.org/10.1063/1.115036].
568. K. Dovidenko, S. Oktyabrsky, J. Narayan, and M. Razeghi, "Epitaxial Growth of Aluminum Nitride on
Sapphire and Silicon," Proceedings of Symposium F Materials Research Society (MRS), Boston, MA
(September 1, 1995).
569. M. Razeghi, "InGaAsP-based High Power Laser Diodes," Optics and Photonics News (August 1, 1995).
570. J. Hoff, X. He, M. Erdtmann, E. Bigan, M. Razeghi, and G.J. Brown, "p-doped GaAs/Ga0.51In0.49P
quantum well intersub-band photodetectors," Journal of Applied Physics 78 (3)(August 1,
1995) [http://link.aip.org/link/JAPIAU/v78/i3/p2126/s1].
571. J. Hoff, S. Kim, M. Erdtmann, R. Williams, J. Piotrowski, E. Bigan, M. Razeghi and G.
Brown, "Background Limited Performance in p-doped GaAs/Ga[0.71]In[0.29]As[0.39]P[0.61]
Quantum Well Infrared Photodetectors," Applied Physics Letters 67 (1) (July 3,
1995) [http://link.aip.org/link/APPLAB/v67/i1/p22/s1].
572. H. Yi, J. Diaz, L.J. Wang, I. Eliashevich, S. Kim, R. Williams, M. Erdtmann, X. He, E. Kolev and M.
Razeghi, "Optimized structure for InGaAsP/GaAs 808nm high power lasers,"Applied Physics Letters
66 (24) (June 12, 1995) [http://link.aip.org/link/APPLAB/v66/i24/p3251/s1].
573. I. Eliashevich, J. Diaz, H. Yi, L. Wang, and M. Razeghi, "Reliability of Aluminum-Free 808 nm HighPower Laser Diodes with Uncoated Mirrors," Applied Physics Letters 66 (23)(June 5,
1995) [http://link.aip.org/link/APPLAB/v66/i23/p3087/s1].
574. P. Kung, A. Saxler, X. Zhang, D. Walker, T.C. Wang, I. Ferguson, and M. Razeghi, "High quality AlN
and GaN epilayers grown on (00*1) sapphire, (100) and (111) silicon substrates," Applied Physics
Letters 66 (22) (May 29, 1995) [http://link.aip.org/link/APPLAB/v66/i22/p2958/s1].
575. X. Zhang, P. Kung, A. Saxler, D. Walker, T. Wang, and M. Razeghi, "Photoluminescence study of
GaN," Acta Physica Polonica A 88 (4) (May 29, 1995).
576. M. Razeghi, I. Eliashevich, J. Diaz, H.J. Yi, S. Kim, M. Erdtmann, D. Wu, and L.J. Wang, "High Power
Aluminum-free InGaAsP/GaAs Pumping Diode Lasers," Materials Science and Engineering B 35 (May
8, 1995).
577. P.M. Lundquist, W.P. Lin, G.K. Wong, M. Razeghi, and J.B. Ketterson, "Second harmonic generation in
hexagonal silicon carbide," Applied Physics Letters 66 (15) (April 10,
1995)[http://link.aip.org/link/APPLAB/v66/i15/p1883/s1].
578. G. Singh, E. Michel, C. Jelen, S. Slivken, J. Xu, P. Bove, I. Ferguson, and M. Razeghi, "Molecular Beam
Epitaxial Growth of High Quality InSb for p-i-n Photodetectors," Journal of Vacuum Science and
Technology B 13 (2) (March 1, 1995) [http://dx.doi.org/10.1109/68.491591 ].
579. M. Ulmer, M. Razeghi, and E. Bigan, "Ultraviolet Detectors for AstroPhysics Present and
Future," Optoelectronic Integrated Circuit Materials Physics and Devices, SPIE Conference, San Jose,
CA; Proceedings, Vol. 239 (February 6, 1995) [http://dx.doi.org/10.1117/12.206870].
580. J. Piotrowski and M. Razeghi, "Improved performance of IR photodetectors with 3D gap
engineering," Optoelectronic Integrated Circuit Materials Physics and Devices, SPIE Conference, San
Jose, CA; Proceedings, Vol. 2397 (February 6, 1995) [http://dx.doi.org/10.1117/12.206868].
581. J. Diaz, H. Yi, S. Kim, M. Erdtmann, L.J. Wang, I. Eliashevich, E. Bigan and M. Razeghi, "Investigation
of 0.8 μm InGaAsP-GaAs laser diodes with Multiple Quantum Wells,"Optoelectronic Integrated
Circuit Materials Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397 (February
6, 1995) [http://dx.doi.org/10.1117/12.206931].
582. E. Michel, R. Peters, S. Slivken, C. Jelen, P. Bove, J. Xu, I. Ferguson, and M. Razeghi, "Molecular beam
epitaxial growth of InSb p-i-n photodetectors on GaAs and Si,"Optoelectronic Integrated Circuit
Materials Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397 (February 6,
1995) [http://dx.doi.org/10.1117/12.206888].
583. J. Hoff, E. Bigan, G.J. Brown, and M. Razeghi, "Aluminum-free Quantum Well Intersubband
Photodetectors with p-type GaAs Wells and lattice-matched ternary and quaternary
barriers," Optoelectronic Integrated Circuit Materials Physics and Devices, SPIE Conference, San Jose,
CA; Proceedings, Vol. 2397 (February 6, 1995)[http://dx.doi.org/10.1117/12.206893].
584. P. Kung, X. Zhang, E. Bigan, and M. Razeghi, "Low pressure metalorganic chemical vapor deposition
of high quality AlN and GaN thin films on sapphire and silicon substrates,"Optoelectronic Integrated
Circuit Materials Physics and Devices, SPIE Conference, San Jose, CA; Proceedings, Vol. 2397 (February
6, 1995) [http://dx.doi.org/10.1117/12.206881].
585. H. Yi, J. Diaz, I. Eliashevich, M. Stanton, M. Erdtmann, X. He, L. Wang, and M. Razeghi, "Temperature
dependence of threshold current density Jth and differential efficiency of High Power InGaAsP/GaAs
( λ = 0.8 μm) lasers," Applied Physics Letters 66 (3) (January 16,
1995) [http://link.aip.org/link/APPLAB/v66/i3/p253/s1].
586. S. Elhamri, M. Ahoujja, K. Ravindran, D.B. Mast, R.S. Newrock, W.C. Mitchel, G.J. Brown, I. Lo, M.
Razeghi and X. He, "Persistent photoconductivity in thin undoped GaInP/GaAs quantum
wells," Applied Physics Letters 66 (2) (January 9, 1995) [http://link.aip.org/link/APPLAB/v66/i2/p171/s1].
587. M. Razeghi, Y.H. Choi, X. He, and C.J. Sun, "Exploration of entire range of III-V semiconductors and
their device applications," Materials Science and Technology 11 (January 1, 1995).
588. T. Kato, H. Ohsato, M. Razeghi, and T. Okuda, "Defects of 6H-SiC substrates made by Acheson's
method and by modified Lely's method," Proceedings - Silicon Carbide and Related Materials
Conference Kyoto, Japan; Institute of Physics Conference Seris 142 (2) (January 1, 1995).
589. J. Hoff, C. Jelen, S. Slivken, E. Bigan, M. Razeghi, and G.J. Brown, "Analysis of Spectral Response in ptype GaAs/GaInP QWIPs," Superlattices and Microstructures 8 (4) (January 1, 1995).
590. E. Michel, G. Singh, S. Slivken, C. Besikci, P. Bove, I. Ferguson, and M. Razeghi, "Molecular Beam
Epitaxial Growth of High Quality InSb," Applied Physics Letters 65 (26)(December 26,
1994) [http://link.aip.org/link/APPLAB/v65/i26/p3338/s1].
591. X.G. He, M. Erdtmann, R. Williams, S. Kim, and M. Razeghi, "The correlation between x-ray
diffraction patterns and strain distribution inside GaInP/GaAs superlattices," Applied Physics Letters
65 (22) (November 28, 1994) [http://link.aip.org/link/APPLAB/v65/i22/p2812/s1].
592. C. Besikci, Y.H. Choi, G. Labeyrie, E. Bigan and M. Razeghi with J.B. Cohen, J. Carsello, and V.P.
Dravid, "A detailed analysis of carrier transport in InAs0.3Sb0.7 layers grown on GaAs substrates by
metalorganic chemical vapor deposition," Journal of Applied Physics 76 (10) (November 15,
1994) [http://link.aip.org/link/JAPIAU/v76/i10/p5820/s1].
593. H.J. Yi, I. Eliashevich, J. Diaz, L.J. Wang, and M. Razeghi, "Theoretical Investigation of Jth and hd vs.
Cavity Length for InGaAsP/GaAs High Power Lasers," IEEE/LEOS Photonics East
Conference Boston, MA; Proceedings, Vol. 2, SL 13.4 (October 31, 1994).
594. J. Diaz, I. Eliashevich, H.J. Yi, L.J. Wang, and M. Razeghi, "Optimization of InGaAsP/GaAs Laser
Diode Processing for High-Power Operation," IEEE/LEOS Photonics East Conference Boston, MA;
Proceedings, Vol. 2, SL 13.3 (October 31, 1994).
595. J. Diaz, I. Eliashevich, H.J. Yi, M. Stanton, and M. Razeghi, "Theoretical investigation of minority
carrier leakage of high-power 0.8 μm InGaAsP/InGaP/GaAs laser diodes,"Applied Physics Letters 65
(18) (October 31, 1994) [http://link.aip.org/link/APPLAB/v65/i18/p2260/s1].
596. W. C. Mitchel, G.J. Brown, I. Lo, S. Elhamri, M. Aboujja, K. Ravindran, R.S. Newrock, M. Razeghi, and
X. He, "Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells," Applied
Physics Letters 65 (12) (September 19, 1994) [http://link.aip.org/link/APPLAB/v65/i12/p1578/s1].
597. J. Hoff, C. Jelen, S. Slivken, E. Michel, O. Duchemin, E. Bigan, and M. Razeghi with G. Brown and S.M.
Hegde (Wright Laboratory), "Intersubband hole absorption in GaAs-GaInP Quantum Wells grown by
Gas Source Molecular Beam Epitaxy," Applied Physics Letters 65 (9) (August 29,
1994) [http://link.aip.org/link/APPLAB/v65/i9/p1130/s1].
598. J. Diaz, I. Eliashevich, X. He, H. Yi, L. Wang, E. Kolev, D. Garbuzov, and M. Razeghi, "High-power
InGaAsP/GaAs 0.8 μm laser diodes and peculiarities of operational characteristics," Applied Physics
Letters 65 (8) (August 22, 1994) [http://link.aip.org/link/APPLAB/v65/i8/p1004/s1].
599. C. Besikci and M. Razeghi, "On the Description of the Collision Terms in Three-Valley
Hydrodynamic Models for GaAs Device Modeling," IEEE Transactions on Electron Devices 41
(8) (August 1, 1994).
600. J. Diaz, H.J. Yi, M. Erdtmann, X. He, E. Kolev, D. Garbuzov, E. Bigan, and M. Razeghi, "Efficiency of
photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metalorganic chemical vapor deposition," Journal of Applied Physics 76 (2) (July 15,
1994) [http://link.aip.org/link/JAPIAU/v76/i2/p700/s1].
601. C.J. Sun, P. Kung, A. Saxler, H. Ohsato, E. Bigan, M. Razeghi, and D.K. Gaskill, "Thermal stability of
GaN thin films grown on (0001) Al2O3, (0112) Al2O3 and (0001)Si 6H-SiC substrates," Journal of
Applied Physics 76 (1) (July 1, 1994) [http://link.aip.org/link/JAPIAU/v76/i1/p236/s1].
602. M. Razeghi, "High-power laser diodes based on InGaAsP alloys," Nature Vol.369, p.631-633 (June 23,
1994) [http://www.nature.com/nature/journal/v369/n6482/abs/369631a0.html].
603. C. Besikci and M. Razeghi, "Electron Transport Properties of Ga[0.51]In[0.49]P for Device
Applications," IEEE Transactions on Electron Devices 41 (6) (June 1, 1994).
604. P. Kung, C.J. Sun, A. Saxler, H. Ohsato, and M. Razeghi, "Crystallography of epitaxial growth of
wurtzite-type thin films on sapphire substrates," Journal of Applied Physics 75 (9)(May 1,
1994) [http://link.aip.org/link/JAPIAU/v75/i9/p4515/s1].
605. C.J. Sun, P. Kung, A. Saxler, H. Ohsato, M. Razeghi, and K. Haritos, "A Crystallographic Model of
(00*1) Aluminum Nitride Epitaxial Thin Film Growth on (00*1) Sapphire Substrate," Journal of
Applied Physics 75 (8) (April 15, 1994) [http://dx.doi.org/10.1063/1.109862].
606. Y.H. Choi, P. Staveteig, E. Bigan, and M. Razeghi, "Characterization of InTlSb/InSb Grown by Low
Pressure Metalorganic Chemical Vapor Deposition on GaAs Substrat,"Journal of Applied Physics 75
(6) (March 15, 1994) [http://link.aip.org/link/JAPIAU/v75/i6/p3196/s1].
607. C. Jelen, S. Slivken, X.G. He, and M. Razeghi and S. Shastry, "Characterization of high quality
GaInP/GaAs superlattices grown on GaAs and Si substrates by gas source molecular beam
epitaxy," Journal of Vacuum Science and Technology B 12 (2) (March 1,
1994) [http://dx.doi.org/10.1116/1.587059].
608. J. Diaz, I. Eliashevich, K. Mobarhan, L.J. Wang, D.Z. Garbuzov, and M.
Razeghi, "InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodes grown by metalorganic
chemical vapor deposition," IEEE Photonics Technology Letters 6 (2) (February 1, 1994).
609. P.T. Staveteig, Y.H. Choi, G. Labeyrie, E. Bigan, and M. Razeghi, "Photoconductance measurements on
InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition," Applied Physics
Letters 64 (4) (January 24, 1994) [http://link.aip.org/link/APPLAB/v64/i4/p460/s1].
610. E. Bigan, Y.H. Choi, G. Labeyrie, and M. Razeghi, "InTlSb alloys for infrared
detection," Proceedings SPIE Nonlinear Optics for High-Speed Electronics and Optical Frequency
Conversion, Vol. 2145 (January 24, 1994) [http://dx.doi.org/10.1117/12.177130].
611. A. Saxler, P. Kung, C.J. Sun, E. Bigan and M. Razeghi, "High Quality Aluminum Nitride Epitaxial
Layers Grown on Sapphire Substrates," Applied Physics Letters 64 (3) (January 17,
1994) [http://dx.doi.org/10.1063/1.111168].
612. C.J. Sun, P. Kung, A. Saxler, H. Ohsato, and M. Razeghi, "AlxGa1-xN Grown on (00*1) and (01*2)
Sapphire," Proceedings of the 5th International Conference on Silicon Carbide and Related
Materials Washington, DC (November 1, 1993).
613. Y.H. Choi, G. Labeyrie, P.T. Staveteig, E. Bigan, and M. Razeghi, "The Effects of V/III Ratio on
Optical, Electrical and Structural Properties of InAs0.3Sb0.7Grown by LPMOCVD," Electrochemical Society Conference New Orleans, LA; Proceedings, 94-5, Long Wavelength
Infrared Detectors and Arrays: Physics and Applications, F. Radpour and V.R. McCrary (eds.) (October 15,
1993).
614. Y.H. Choi, P.T. Staveteig, E. Bigan, and M. Razeghi, "In1- x TlxSb for Long-Wavelength Infrared
Photodetectors," Electrochemical Society Conference New Orleans, LA; Proceedings, Vol. 94-5 (October
10, 1993).
615. C.J. Sun and M. Razeghi, "Comparison of the Physical Properties of GaN Thin Films Deposited on
(0112) and (0001) Sapphire Substrates," Applied Physics Letters 63 (7) (August 16,
1993) [http://link.aip.org/link/APPLAB/v63/i7/p973/s1].
616. S.N. Song, J.B. Ketterson, Y.H. Choi, R. Sudharsanan, and M. Razeghi, "Transport properties in n-type
InSb films grown by metalorganic chemical vapor deposition," Applied Physics Letters 63 (7) (August
16, 1993) [http://apl.aip.org/applab/v63/i7/p964_s1].
617. Y.H. Choi, R. Sudharsanan, C, Besikci, and M. Razeghi, "Growth of In1-xTlxSb, a New Infrared
Material, by Low-Pressure Metalorganic Chemical Vapor Deposition," Applied Physics Letters 63
(3) (July 19, 1993) [http://dx.doi.org/10.1063/1.110043 ].
618. K. Mobarhan, C. Jelen, E. Kolev, and M. Razeghi, "GaInAsP/InP 1.35 μm Double Heterostructure
Laser Grown on Silicon Substrate by Metalorganic Chemical Vapor Deposition," Journal of Applied
Physics 74 (1) (July 1, 1993) [http://link.aip.org/link/JAPIAU/v74/i1/p743/s1].
619. C. Besikci, Y.H. Choi, R. Sudharsanan, and M. Razeghi, "Anomalous Hall Effect in InSb Layers Grown
by MOCVD on GaAs Substrates," Journal of Applied Physics 73 (10) (May 15,
1993) [http://link.aip.org/link/JAPIAU/v73/i10/p5009/s1].
620. Xiaoguang He and Manijeh Razeghi, "Investigation of the Heteroepitaxial Interfaces in the
GaInP/GaAs Superlattices by High Resolution X-Ray Diffraction and Dynamical Solutions," Journal
of Applied Physics 73 (7) (April 1, 1993) [http://link.aip.org/link/JAPIAU/v73/i7/p3284/s1].
621. Xiaoguang He and Manijeh Razeghi, "Well Resolved Room Temperature Photovoltage Spectra of
GaAs-GaInP Quantum Wells and Superlattices," Applied Physics Letters 62 (6)(February 8,
1993) [http://dx.doi.org/10.1063/1.108874 ].
622. C. Francis, M.A. Bradley, P. Boucaud, F.H. Julien and M. Razeghi, "Intermixing of GaInP/GaAs
Multiple Quantum Wells," Applied Physics Letters 62 (2) (January 11,
1993)[http://dx.doi.org/10.1063/1.109363 ].
623. Razeghi M., S. Koch, R.J. Hang, K.V. Klitzing, K. Ploog, "Finite-Size Scaling in the Dissipative
Transport Regime Between Quantum Hall Plateaus," Physical Review (January 1, 1993).
624. Razeghi M., S. Koch, R.J. Hang, K.V. Klitzing, "Splitting of the Landau Level Coincidence: A Novel
Phase Transition in Tilted Magnetic Fields," Physical Review (January 1, 1993).
625. C. Jelen, S. Charriere, M. Razeghi, and V.J. Leppert, "Growth of InSb/GaAs layers on YIG-coated
GGG substrate," Mat. Res. Soc. Symp. Proc. Vol. 281 (January 1, 1993).
626. K. Mobarhan, M. Razeghi, G. Marquebielle and E. Vassilaki, "High Power 0.98 μm
GaInAs/GaAs/GaInP Multiple Quantum Well Laser," Journal of Applied Physics 72 (9)(November 1,
1992) [http://link.aip.org/link/JAPIAU/v72/i9/p4447/s1].
627. Y.H. Choi, R. Sudharsanan, C. Besikci, E. Bigan, and M. Razeghi, "High Quality InSb Epitaxial Film
Grown by Low Pressure Metalorganic Chemical Vapor Deposition,"Proceeding of Materials Research
Society Conference Proceedings Vol. 281 (November 1, 1992).
628. H. Xiaoguang, M. Razeghi, "Optical Investigations of GaAs-GaInP Quantum Wells Grown on the
GaAs, InP, and Si Substrates," Applied Physics Letters 61 (14) (October 5,
1992)[http://link.aip.org/link/APPLAB/v61/i14/p1703/s1].
629. M. Razeghi, R. Sudharsanan, and J.C.C. Fan, "Frontiers of Monolithic Integration of Semiconductor
III-V Optoelectronic Devices with Si Technology," Proceedings of International Conference on Solid
State Devices and Materials Tsukuba, Japan (August 1, 1992).
630. K. Mobarhan, M. Razeghi and R. Blondeau, "GaInAs/GaAs/GaInP Buried Ridge Structure Single
Quantum Well Laser Emitting at 0.98 μm," IEEE Electronics Letters 28 (16) (July 30, 1992).
631. Razeghi M., D. Yang, J.W. Garland, Z. Zhang, D. Xue, "Evaluation of the Band Offsets of GaAs-GaInP
Multilayers by Electroreflectance," SPIE Proceedings Vol. 1676, pp. 130 (January 1,
1992) [http://dx.doi.org/10.1117/12.137652 ].
632. Acher O., Omnes F., Razeghi M., Drevillion B., "Caracterisation optique des semiconducteurs III-V
par ellipsometrie et reflectance differentielle spectroscopique," Thomson-CSF Revue Technique Vol.
23, No. 3, (September 1, 1991).
633. Razeghi M., and M.A. di Forte-Poisson, "Incorporation of Impurities in GaAs Grown by
MOCVD," Thomson-CSF Revue Technique Vol. 23, No. 3 (September 1, 1991).
634. Omnes F., Defour M., Razeghi M., "Etude du dopage de type n et p des materiaux GaAs et
GaInP," Thomson-CSF Revue Technique Vol. 23, No. 3 (September 1, 1991).
635. Omnes F., and Razeghi M., "GaAs-GaInP Multipayers for High Performance Electronic
Devices," Thomson-CSF Revue Technique Vol. 23, No. 3 (September 1, 1991).
636. Omnes F., and Razeghi M., "A Review of the Band Offsets Measurements in the GaAs/Ga0.49In0.51P
System," Thomson-CSF Revue Technique Vol. 23, No. 3 (September 1, 1991).
637. Omnes F., and Razeghi M., "Optical Investigations of GaAs-GaInP Quantum Wells and Superlattices
Grown by Metalorganic Chemical Vapor Deposition," Applied Physics Letters 59 (9) p. 1034 (May 28,
1991) [http://link.aip.org/link/APPLAB/v59/i9/p1034/s1].
638. Feng S.L., Bourgoin J.C., Omnes F., and Razeghi M., "Defects in Organometallic Vapor-Phase EpitaxyGrown GaInP Layers," Applied Physics Letters 59 (8) p. 941 (May 28,
1991)[http://link.aip.org/link/?APL/59/941].
639. Julien F.H., Bradley M., Rao E.V.K., Razeghi M., Goldstein L., "InGaAs(P)/InP MQW Mixing by Zn
Diffusion Ge and S Implantation for Optoelectronic Applications,," Optical and Quantum
Electronics 23 (November 30, 1990).
640. Feng S.L., Bourgoin J.C., and Razeghi M., "Defects in High Purity GaAs Grown by Low Pressure
Metalorganic Chemical Vapor Deposition," Semiconductor Science and Technology 6 pp. 229-230
(November 30, 1990).
641. Razeghi M., "Recent Advances in MOCVD Growth of GaAs/GaInP System for OEICs
Applications," Proceeding of the 7th International Conference on Vapor Growth and EpitaxyNagoya,
Japan (November 30, 1990).
642. N. Bandyopadhyay, M. Chen, S. Sengupta, S. Slivken, and M. Razeghi, "Ultra-broadband quantum
cascade laser, tunable over 760 cm−1, with balanced gain," Opt. Express 2321159-21164 (November
30, 1999) [http://dx.doi.org/10.1364/OE.23.021159].
Conferences & Conference Proceedings
1.
2.
3.
4.
5.
6.
7.
8.
9.
Invited Speaker, "High-Performance Mid-and Long-wavelength Infrared Photodectors based on
InAs/InAs1-xSbx Type-II Superlattices" , SPIE DSS 2016, Infrared Technology & Applications
XLII , Baltimore, MD. -- April 17, 2016, [http://www.spie.org/ds100].
Invited Speaker, "High Performance Short-wavelength Infrared Photodetectors based on
InAs/InAs1-xSbx/AIAs1-xSbx Type-II Superlattices for High Operating Temporary
Applications" , SPIE DSS 2016, Infrared Technology & Applications XLII , Baltimore, MD. -- April
17, 2016, [http://www.spie.org/ds100].
Program Committee Member, "Infrared Technology and Applications XLII" , SPIE DSS 2016,
Infrared Technology & Applications XLII , Baltimore, MD. -- April 17,
2016,[http://www.spie.org/ds100].
Keynote Speaker, "Recent Advances in RT-CW, widely tunable semiconductor THz sources" , SPIE
DSS 2016, Infrared Technology & Applications XLII , Baltimore, MD. -- April 17,
2016, [www.spie.org/ds100].
Keynote Speaker, "Optical Properties of GaN Fabricated by Chemical Lift-off Using Sacrificial ZnO
Layers" , SPIE 2016 Photonics West Conference , San Francisco, CA. -- February 13,
2016, [http://spie.org/x2584.xml].
Invited Speaker, "Quantum Science and Technology: Applications for Daily Life" , University of
Maryland , Baltimore, MD. -- January 29, 2016.
Plenary Speaker, "Optoelectronics for any Occasion with Modern Band Structure
Engineering" , Workshop on Multifunctional Nanomaterials and Workshop on Frontier in
Electronics , San Juan, PR -- December 16, 2015, [http://www.multifunctionalnanomaterials.org/].
Invited Speaker, "Room tempature. widely tunable, compact THz sources for the diagnosis and
detection of CBRN and explosives" , NATO Tera-Mir Workshop , Izmir, Turkey -- November 3,
2015, [http://www.tera-mir.org/main/node/80].
Plenary Speaker, "Developing Better Light Sources with Band Structure Engineering" , Ashton
Year of Light Workshop , Birmingham, UK -- October 6,
2015,[http://www.aston.ac.uk/eas/research/groups/photonics/events-seminars/the-aston-year-of-lightworkshop-2015/].
10. Keynote Speaker, "Recent Breakthrough in Quantum Cascade Lasers" , SPIE DSS Europe 2015 ,
Toulose, France -- September 21, 2015, [http://spie.org/x6201.xml].
11. Organizing Commitee Member , International Conference and Exhibiton on Lasers, Optics and
Photonics , Valencia, Spain -- September 1, 2015,[http://optics.conferenceseries.com/index.php].
12. Conference Chair , International Conference and Exhibiton on Lasers, Optics and Photonics ,
Valencia, Spain -- September 1, 2015, [http://optics.conferenceseries.com/index.php].
13. Keynote Speaker, "Recent Advances of III-V Semiconductor Quantum Devices from Deep UV
(200nm) to THz (300 microns)" , International Conference and Exhibition on Lasers, Optics, and
Photonics , Valencia, Spain -- September 1, 2015, [http://optics.conferenceseries.com/index.php].
14. Conference Chair, "Terahertz Emitters, Receivers, and Applications VI" , SPIE 2015 - Optics &
Photonics , San Diego, CA. -- August 9, 2015, [http://spie.org/x30535.xml ].
15. Program Committee Member, "Organic Sensors and Bioelectronics VIII" , SPIE 2015 - Optics &
Photonics , San Diego, CA. -- August 9, 2015, [http://spie.org/x30535.xml ].
16. Conference Chair, "Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and
Applications" , SPIE 2015 - Optics & Photonics , San Diego, CA. -- August 9,
2015, [http://spie.org/x30535.xml ].
17. Conference Chair, "Biosensing and Nanomedicine VIII" , SPIE 2015 - Optics & Photonics , San
Diego, CA. -- August 9, 2015, [http://spie.org/x30535.xml].
18. Conference Chair, "Spintronics VIII" , SPIE 2015 - Optics & Photonics , San Diego, CA. -- August 9,
2015, [http://spie.org/x30535.xml].
19. Conference Chair, "Carbon Nanotubes, Graphene and Emerging 2D Materials for Electronic and
Photonic Devices VIII" , SPIE 2015 - Optics & Photonics , San Diego, CA. -- August 9,
2015, [http://spie.org/x30535.xml].
20. Invited Speaker, "Recent Development of High Power, Widely Tunable, THz Quantum Cascasde
Laser Sources Based on Difference-Frequuency Generation" , SPIE 2015 - Optics & Photonics , San
Diego, CA. -- August 9, 2015, [http://spie.org/x30535.xml ].
21. Invited Speaker, "Ultraviolet Avanlanche Photodiodes" , SPIE 2015 - Optics & Photonics , San
Diego, CA. -- August 9, 2015, [http://spie.org/x30535.xml ].
22. Invited Speaker, "Solar-Bind Photodetectors and Focal Plane Arrays Based on AIGaN" , SPIE 2015
- Optics & Photonics , San Diego, CA. -- August 9, 2015,[http://spie.org/x30535.xml ].
23. Invited Speaker, "High-Performance Near Infrared Photodectors Based on Gallium-Free
InAs1xSbx/AlAs1-xSbx Type II Superlattices" , SPIE 2015 - Optics & Photonics , San Diego, CA. -August 9, 2015, [http://spie.org/x30535.xml ].
24. Invited Speaker, "Growth of AIGan on Silicon Substrates: a Novel Way to Make Back-Illuminated
Ultraviolet Photodetectors" , SPIE 2015 - Optics & Photonics , San Diego, CA. -- August 9,
2015, [http://spie.org/x30535.xml ].
25. Organizing Commitee Member , Conference and Trade Fair in Laser Technology , Florida -- July 20,
2015, [http://laser-technology.conferenceseries.net/].
26. Plenary Speaker, "High Power Semiconductor Laser Source at Room Temperature for Sensing and
Telecommunication" , Conference and Trade Fair in Laser Technology , Florida -- July 20,
2015, [http://laser-technology.conferenceseries.net/].
27. Invited Speaker, "Applications and Thermal Challenges for Quantum Cascade Lasers" , InterPACK
2015 and ICNMM 2015 Workshop , San Francisco, CA. -- July 6,
2015,[http://www.asmeconferences.org/InterPACKICNMM2015/index.cfm].
28. Invited Speaker, "Atomic Engineeing of III-V Semiconductors for Quantum Devices from Deep UV
(200 nm) to Terahertz (300 microns) at CQD/NU: Recent Advances and Future Trends" , Argonne
National Labs , Argonne, IL. -- June 24, 2015.
29. Invited Speaker, "Recent Breakthroughs in Quantum Cascade Lasers" , Collaborative Conference
on 3D and Materials Research (CC3DMR) 2015 Conference , Busan, South Korea -- June 15,
2015, [http://www.cc3dmr.org/2015/].
30. Invited Speaker, "InAs/InAs1-xSbx Type-II Superlattices for High-performance Long-wavelength
Infrared Medical Thermography" , ECS Meeting , Chicago, IL. -- May 24,
2015, [http://www.electrochem.org/meetings/biannual/227/].
31. Scientific Committee Member , WSEAS - World Scientific and Engineering Academy and Society
Conference" , Konya, Turkey -- May 20, 2015, [http://wseas.org/cms.action?id=8960].
32. Plenary Speaker, "From Terahertz to Deep UV, Science, Technology, and Applications of Quantum
Devices" , WSEAS - World Scientific and Engineering Academy and Society Conference , Konya,
Turkey -- May 20, 2015, [http://wseas.org/cms.action?id=8960].
33. Program Committee Member, "Infrared Technology and Applications XLI" , SPIE DSS 2015 ,
Baltimore, MD. -- April 20, 2015, [http://spie.org/defense-security-sensing.xml].
34. Invited Speaker, "InAs/InAs1-xSbx type-II superlattices for high performance long wavelength
infrared detection" , SPIE DSS 2015 , Baltimore, MD. -- April 20, 2015,[http://spie.org/defense-securitysensing.xml].
35. Invited Speaker, "High-Performance Bias-selectable Dual-band Mid-/Long-wavelength Infrared
Photodetectors based on InAs/InAs1-xSbxType-II Superlattices" , SPIE DSS 2015 , Baltimore, MD. -April 20, 2015, [http://spie.org/defense-security-sensing.xml].
36. Keynote Speaker, "Recent advances in room temperature THz emitter based on DFG at
CQD/NU" , SPIE DSS 2015 , Baltimore, MD. -- April 20, 2015, [http://spie.org/defense-securitysensing.xml].
37. Invited Speaker, "Recent Breakthroughs in Quantum Cascade Lasers" , MIRSENS III , Wurzburg,
Germany -- March 5, 2015, [http://www.mirsens.org/].
38. Invited Speaker, "Atomic Engineering of III-V Semiconductor for Quantum Devices" , ECE
Colloquim , Champaign, IL -- February 19, 2015, [https://www.youtube.com/watch?v=N9gP9MUd65Q].
39. Symposium Chair, "Nanotechnologies in Photonics" , SPIE 2015 Photonics West Conference , San
Francisco, CA. -- February 7, 2015, [http://spie.org/photonics-west.xml].
40. Conference Chair, "Quantum Sensing and Nanophotonic Devices XII" , SPIE 2015 Photonics West
Conference , San Francisco, CA. -- February 7, 2015, [http://spie.org/photonics-west.xml].
41. Invited Speaker, "Hetero-Integration of GaN on Si (100)" , SPIE 2015 Photonics West Conference ,
San Francisco, CA. -- February 7, 2015, [http://spie.org/photonics-west.xml].
42. Program Committee, "Oxide-based Materials and Devices VI" , SPIE 2015 Photonics West
Conference , San Francisco, CA. -- February 7, 2015, [http://spie.org/photonics-west.xml].
43. Invited Speaker, "MOVPE growth of InGaN alloys with high in content on ZnO template
substrates" , SPIE 2015 Photonics West Conference , San Francisco, CA. -- February 7,
2015, [http://spie.org/photonics-west.xml].
44. Invited Speaker, "Wafer-scale chemical lift-off of GaN thin films from sapphire substrates using
ZnO sacrificial layers" , SPIE 2015 Photonics West Conference , San Francisco, CA. -- February 7,
2015, [http://spie.org/photonics-west.xml].
45. Invited Speaker, "Optical studies of nickel oxide growth on Si (111), c-AI203, and FTO/glass by
pulsed laser deposition" , SPIE 2015 Photonics West Conference , San Francisco, CA. -- February 7,
2015, [http://spie.org/photonics-west.xml].
46. Keynote Speaker, "Atomic and Gap Engineering for Biosensing - Inspiration from
Nature" , International Conference on Bioinspired and Biobased Chemistry & Materials , Nice,
France -- October 15, 2014, [http://sites.unice.fr/nice2014-conference/].
47. Invited Speaker, "Recent Advances in Room Temperature THz emitter based on DFG at
CQD/NU , National Meeting at CNRS, , Paris, France -- October 14, 2014.
48. Scientific Committee Member , MIOMD XII , Montpellier, France -- October 5, 2014, [
http://www.miomd2014.org/].
49. Invited Speaker, "GaN based Optoelectronic Devices: From Ultraviolet Detectors and Visible
Emitters Towards THz Intersubband Devices" , Fall 2014 ECS Symposium Q3: GaN and SiC Power
Technologies 4 , Cancun, Mexico -- October 5, 2014, [http://www.electrochem.org/meetings/biannual/226/
].
50. Conference Chair , Fall 2014 ECS Symposium Q3: GaN and SiC Power Technologies 4 , Cancun,
Mexico -- October 5, 2014,[https://ecs.confex.com/ecs/226/webprogram/programs.html].
51. Invited Speaker, "Electrically Tunable Quantum Cascade Lasers for Broadband
Applicaions" , MIOMD XII , Montpellier, France -- October 5,
2014,[https://ecs.confex.com/ecs/226/webprogram/programs.html].
52. Invited Speaker, "Quantum Engineering of Semiconductor Atomic Structures for Quantum Devices
from 0.2-300 Microns" , National Science Foundation Wireless and Communications and Sensing
Devices, Components and Systems , Dublin, Ireland -- September 28, 2014.
53. Conference Chair , Workshop on Defects in Wide Bandgap (WBG) Semiconductors , College Park,
MD. -- September 23, 2014, [http://widebandgap.umd.edu/].
54. Keynote Speaker, "Novel Approaches to Addressing the Challenge of Growing Defect-Free Wide
Bandgap Semiconductors" , Workshop on Defects in Wide Bandgap (WBG) Semiconductors ,
College Park, MD. -- September 23, 2014, [http://www.nanocenter.umd.edu/events/wbg/program/].
55. Invited Speaker, "The Quantum Cascade Laser: A Broadband, Tunable Light Source for NASA
Applications" , Meeting at NASA , Washington DC -- September 22, 2014.
56. Invited Speaker, "Recent Advances of Room Temperature Continous Wave High Power Terahertz
Sources Based on Difference Frequency Generation in Quantum Cascade Lasers" , European
Semiconductor Laser Workshop (ESLW) , Paris, France -- September 18,
2014, [http://www.lpn.cnrs.fr/fr/PHODEV/ESLW2014/].
57. Invited Speaker, "Electrically Tunable Quantum Cascade Lasers for Broadband
Applicaions" , International Conference and Exhibition on Lasers, Optics, and Photonics ,
Philadelphia, PA. -- September 8, 2014, [http://www.omicsgroup.com/lasers-optics-photonics-conference2014/cfa.php].
58. Plenary Speaker, "Quantum Cascade Laser: From Tool to Product" , International Quantum
Cascade Lasers School & Workshop 2014 , Policoro, Italy -- September 7,
2014,[http://www.iqclsw2014.cnr.it/].
59. Conference Chair, "Terahertz Emitters, Receivers, and Applications V" , SPIE 2014 - Optics &
Photonics , San Diego, CA. -- August 17, 2014, [http://spie.org/optics-photonics.xml].
60. Invited Speaker, "RT,CW operation of 3.5 THz laser diode based on DFG-QCL" , SPIE 2014 Optics & Photonics , San Diego, CA. -- August 17, 2014, [http://spie.org/optics-photonics.xml].
61. Conference Chair, Carbon Nanotubes, Graphene, and Associated Devices VII , SPIE 2014 - Optics &
Photonics , San Diego, CA. -- August 17, 2014, [http://spie.org/optics-photonics.xml ].
62. Conference Chair, Spintronics VII , SPIE 2014 - Optics & Photonics , San Diego, CA. -- August 17,
2014, [http://spie.org/optics-photonics.xml ].
63. Symposium Chair, Nano Science + Engineering 2014 , SPIE 2014 - Optics & Photonics , San Diego,
CA. -- August 17, 2014, [http://spie.org/optics-photonics.xml ].
64. Conference Chair, Biosensing and Nanomedicine IV , SPIE 2014 - Optics & Photonics , San Diego,
CA. -- August 17, 2014, [http://spie.org/optics-photonics.xml ].
65. Invited Speaker, "Recent Progress of Room Temperature THz Sources Based on Nonlinear
Frequency Mixing in Quantum Cascade Laser" , SPIE 2014 - Optics & Photonics , San Diego, CA. -August 17, 2014, [http://spie.org/optics-photonics.xml ].
66. Invited Speaker, "Recent Advances in Mid-Infrared Laser Diodes for Infrared Countermeasures at
Center for Quantum Devices (CQD) at Northwestern University" , NATO Specialist Meeting on
"Novel Infrared Laser Technology for Modern Battlefield Requirements" , Salisbury, England -- July
24, 2014.
67. Invited Speaker, "High Performance III-Nitride Based Deep UV Photonic Devices on Silicon
Substrates" , CCMR 2014 Conference , Seoul, South Korea -- June 23,
2014,[http://www.cc3dmr.org/m2014/].
68. Session Chair , CCMR 2014 Conference , Seoul, South Korea -- June 23,
2014, [http://www.cc3dmr.org/m2014/].
69. Organizing Committee Member and Keynote Speaker, "From Terahertz to Deep UV, Science and
Technology for Space Applications" , Microelectronics Workshop , Istanbul, Turkey -- June 19, 2014.
70. Invited Speaker, "III-Nitride based Semiconductor for Optoelectronic Devices From Deep UV
(200nm) to THz (300 microns) , WOCSDICE/EXMATWC 2014 , Delfi, Greece -- June 15,
2014, [http://exmatec-wocsdice-2014.iesl.forth.gr/index.html].
71. Session Chair, "Optoelectronic Devices" , WOCSDICE/EXMATWC 2014 , Delfi, Greece -- June 15,
2014, [http://exmatec-wocsdice-2014.iesl.forth.gr/index.html].
72. Keynote Speaker "A Review on Antimonide-based Semiconductors for High-Performance
Optoelectronic Devices in Center for Quantum Devices" , SPIE DSS 2014 - Image Sensing
Technologies: Materials, Devices, Systems, and Applications Conference , Baltimore, MD. -- May 5,
2014, [http://spie.org/defense-security-sensing.xml].
73. Invited Speaker "Antimonide-based Superlattices for LWIR imaging" , SPIE DSS 2014 - Image
Sensing Technologies: Materials, Devices, Systems, and Applications Conference, Baltimore, MD. -May 5, 2014, [http://spie.org/defense-security-sensing.xml].
74. Invited Speaker "Type-II Superlattices for HOT Infrared Imagers" , SPIE DSS 2014 - Image
Sensing Technologies: Materials, Devices, Systems, and Applications Conference , Baltimore, MD. -May 5, 2014, [http://spie.org/defense-security-sensing.xml].
75. Session Chair, "Type II Superlattice FPAs I" , SPIE DSS 2014 - Image Sensing Technologies:
Materials, Devices, Systems, and Allpications Conference , Baltimore, MD. -- May 5,
2014, [http://spie.org/defense-security-sensing.xml].
76. Invited Speaker, , 3rd Annual Conference and Expo of AnalytiX 2014 , Dalian, China -- April 25,
2014, [http://www.bitlifesciences.com/analytix2014/program.asp].
77. General Chair and Keynote Speaker, "Recent Advances and Future Trends on Atomic Engineering
III-V Semiconductor for Quantum Devices from Deep UV (200nm) up to THZ (300 microns)" , 2014
International Conference on Chemical Engineering and Material Science , Venice, Italy -- March 15,
2014,[http://www.europment.org/conferences/2014/venice/cems.htm ].
78. Invited Speaker, , NGC 2014 Conference, 6th NANA & GIGA Forum , Tempe, AZ. -- March 10,
2014, [http://nanoandgiga.com/ngc2014/].
79. Keynote Speaker, "Recent progress in high-power single-mode quantum cascade lasers" , SPIE 2014
Photonics West Conference , San Francisco, CA. -- February 1, 2014,[http://spie.org/x2584.xml].
80. Conference Chair, "Quantum Sensing and Nanophotonic Devices XI" , SPIE 2014 Photonics West
Conference , San Francisco, CA. -- February 1, 2014, [http://spie.org/x2584.xml].
81. Keynote Speaker, "III-V semiconductor optoelectronic devices from Uv to THz: recent advances and
future trends" , SPIE 2014 Photonics West Conference , San Francisco, CA. -- February 1,
2014, [http://spie.org/x2584.xml].
82. International Commitee Member , International Conference on Materials Science , Cambridge, MA. - January 29, 2014.
83. Invited Speaker, , 20th Anniversary of QCL , Zurich, Switzerland -- January 16,
2014, [http://www.20yearsqcl.ethz.ch/].
84. Women in THz Pushing the Frontiers of Monolithic Integration: A Compact THz
Revolution , International Conference on THz and Mid Infrared Radiation and Applications to
Cancer Detection Using Laser Imaging , Sheffield Hallam University, Sheffield, UK -- October 10,
2013, [http://tera-mir.org/].
85. Quantum Engineering of Semiconductor Atomic Structures for Biosensing and Photonics , The
International Conference and Exhibition on Lasers, Optics, and Photonics , San Antonio, TX -October 3, 2013, [http://www.omicsgroup.com/conferences/lasers-optics-photonics-2013/].
86. Invited Talk, "III-V Sb Based Type-II Superlattices for Third Generation Infrared
Imagers" , Workshop on the Physics and Chemistry of II-VI Materials , Chicago, IL. -- October 1,
2013.
87. Invited Speaker, "High power THz sources with wide tenability based on intracavity difference
frequency generation semiconductor THz sources" , SPIE 2013 Optics + Photonics Conference , San
Diego, CA. -- August 25, 2013.
88. Symposium Chair, "NanoScience + Engineering" , SPIE 2013 Optics + Photonics Conference , San
Diego, CA. -- August 25, 2013.
89. Conference Chair, "Terahertz Emitters, Receivers, and Applications IV" , SPIE 2013 Optics +
Photonics Conference , San Diego, CA. -- August 25, 2013.
90. Conference Chair, "Biosensing and Nanomedicine VI" , SPIE 2013 Optics + Photonics Conference ,
San Diego, CA. -- August 25, 2013.
91. Conference Chair, "Spintronics VI" , SPIE 2013 Optics + Photonics Conference , San Diego, CA. -August 25, 2013.
92. Conference Chair, "Carbon Nanotubes, Graphene and Associated Devices VI , SPIE 2013 Optics +
Photonics Conference , San Diego, CA. -- August 25, 2013.
93. Invited Speaker, "High power THz sources with wide tenability based on intracavity difference
frequency generation semiconductor THz sources" , ARW NARO WORKSHOP, Kiev, Ukraine -May 26, 2013.
94. Invited Speaker, "High-Performance Bias-selectable Dual-band Mid-/Long-wavelength Infrared
Photodetectors and Focal Plane Arrays based on InAs/GaSb Type-II Superlattices” , SPIE Defense,
Security and Sensing (DSS) Conference , Baltimore, MD. -- April 29, 2013.
95. Invited Speaker,"Widely-tuned room-temperature high semiconductor THz sources" , Terahertz
Days and GDR‐I Workshop , Cargèse, Corsica, France -- March 25, 2013.
96. "High performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors based
on type-II InAs/GaSb/AlSb superlattices" , SPIE Photonics West Symposium in Quantum Sensing
and Nanophotonic Devices X Conference , San Francisco, CA -- February 5, 2013.
97. "Effect of gating technique on the type-II InAs/GaSb long-wavelength infrared
photodetectors" , SPIE Photonics West Symposium in Quantum Sensing and Nanophotonic Devices
X Conference , San Francisco, CA -- February 5, 2013.
98. Invited talk, "Room-temperature high-performance laser diodes from 3 micron to 300 micron , SPIE
Photonics West Symposium in Photonic and Phononic Properties of Engineering Nanostructures
Conference , San Francisco, CA -- February 4, 2013.
99. "Ultraviolet light-emitting diode on Si substrate" , SPIE Photonics West Symposium in Quantum
Sensing and Nanophotonic Devices X Conference , San Francisco, CA -- February 4, 2013.
100. Conference Chair, Quantum Sensing and Nanophotonic Devices X , SPIE Photonics West
Symposium , San Francisco, CA -- February 3, 2013.
101. Program Committee Member, Oxide-based Materials and Devices IV Conference , SPIE Photonics
West Symposium , San Francisco, CA -- February 3, 2013.
102. Program Committee Member, Optoelectronic Integrated Circuits IV Conference , SPIE Photonics
West Symposium , San Francisco, CA -- February 3, 2013.
103. "Widely-tuned room-temperature terahertz quantum cascade lasers sources" , SPIE Photonics West
Symposium in Quantum Sensing and Nanophotonic Devices X Conference , San Francisco, CA -February 3, 2013.
104. "Continuous-wave room-temperature operation of lambda ~ 3 micron quantum cascade
laser" , SPIE Photonics West Symposium in Quantum Sensing and Nanophotonic Devices X
Conference , San Francisco, CA -- February 3, 2013.
105. "Dual section quantum cascade lasers with wide electrical tuning" , SPIE Photonics West
Symposium in Quantum Sensing and Nanophotonic Devices X Conference , San Francisco, CA -February 3, 2013.
106. Keynote Talk, "State-of-the-art IR laser diodes with high power, high WPE, single mode, CW
operation at RT" , TERA-MIR 2012 , Izmir, Turkey -- November 3, 2012.
107. Plenary Talk, "Recent progress in mid-infrared laser sources at Center for Quantum Devices,
Northwestern University" , MIRSENS-II Workshop , Wroclaw, Poland -- October 19, 2012.
108. Plenary Talk, , SPIE Security and Defence/Europe - Technologies for Optical Countermeasures ,
Edinburgh, Scotland -- September 26, 2012.
109. Panel Member , European Research Council (ERC) Grants Panel , Brussels, Belgium -- September 13,
2012.
110. Conference Chair , International Conference on Infrared Optoelectronics: Materials and Devices
(MIOMD-XI) , Evanston, IL -- September 5, 2012.
111. Invited Talk, "Intersubband laser diodes from IR to THz: recent advances and future trends" , SPIE
Optics and Photonics Symposium - Terahertz Emitters, Receivers and Application III Conference ,
San Diego, CA -- August 13, 2012.
112. Plenary Talk, "Semiconductor nano photonics for bio sensing" , SPIE Optics and Photonics
Symposium - Joint Session of Nanobiosystems: Processing, Characterization, & Applications V and
Optical Processes in organic Materials and Nanostructures Conferences , San Diego, CA -- August 13,
2012.
113. International Advisory Committee , 4th International Symposium on Growth of III-Nitride
(ISGN4) , St. Petersburg, Russia -- July 19, 2012.
114. Invited Talk, , International Symposium on Optoelectronic Materials and Devices (ISOMD) ,
Chicago, IL -- July 13, 2012.
115. Invited Talk, , International Symposium on Optoelectronic Materials and Devices (ISOMD) ,
Chicago, IL -- July 12, 2012, [http://www.sivananthanlabs.us/Razeghi.html].
116. Invited Talk, "Frontiers of Intersubband Quantum Cascade Lasers" , 15th International Laser
Optics Conference , St. Petersburg, Russia -- June 26, 2012.
117. Invited Talk, “Antimode-based Type-II Superlattice-based Photon Detectors: An Emerging
Candidate for the Third-Generation of Infrared Imagers” , International Conference on Quantum
Structure Infrared Photodetector (QSIP) , Cargese, Corsica -- June 19, 2012.
118. Panel Member , European Research Council (ERC) Grants Panel , Brussels, Belgium -- May 4, 2012.
119. Invited Talk, Competing technology for high-speed HOT-IR-FPAs , SPIE Defense, Security and
Sensors Symposium , Baltimore, MD -- April 26, 2012.
120. Keynote Talk, Intersubband Lasers Diodes from IR to THz: Recent Advances and Future
Trends , SPIE Defense, Security and Sensors Symposium , Baltimore, MD -- April 24, 2012.
121. Keynote Talk, Recent advances in room temperature semiconductor terahertz sources , SPIE
Defense, Security and Sensors Symposium , Baltimore, MD -- April 24, 2012.
122. Keynote Talk, Revolutionary development of Type-II GaSb/InAs superlattices for third generation of
IR imaging , SPIE Defense, Security and Sensors Symposium , Baltimore, MD -- April 24, 2012.
123. Invited Talk, Recent advances in 2 color FPAs based on T2SL: InAs/GaSb , SPIE Defense, Security
and Sensors Symposium , Baltimore, MD -- April 24, 2012.
124. Program Committee, Nanophotonics Conference , SPIE Photonics Europe , Brussels, Belgium -- April
16, 2012.
125. Invited Talk, "Toward realizing high power semiconductor terahertz laser sources at room
temperature" , Defense Threat Reduction Agency (DTRA) THz Workshop Forum , Falls Church, VA
-- April 3, 2012.
126. Invited Talk, Overview of Activity at the Center for Quantum Devices (CQD) especially Toward
Realizing High Power Semiconductor Terahertz Laser Source at Room Temperature for Sensing and
Telecommunication , Thales Research and Technology (TRT) , Paris, France -- December 20, 2011.
127. Invited Talk, Overview of Activity at the Center for Quantum Devices (CQD) especially Toward
Realizing High Power Semiconductor Terahertz Laser Source at Room Temperature for Sensing and
Telecommunication , Universite Montpellier 2, Institut d'Electronique du Sud (IES) , Montpellier,
France -- December 15, 2011.
128. Invited Talk, Stable single mode terahertz semiconductor sources at room
temperature , International Semiconductor Device Research Symposium (ISDRS) , Collage Park, MD
-- December 9, 2011.
129. High power, High WPE, High operating temperature, reliability, yield, beam quality of QCL for
IRCM and other applications , Workshop on Challenges in Power Sclaing of High Power Diode
Laser Emitters and Arrays , Marina del Rey, CA -- November 3, 2011.
130. International Advisory Committee , 11th International Conference on Intersubband Transitions in
Quantum Wells (ITQW) , Badesi, North Sardinia, Italy -- September 11,
2011,[http://www.itqw2011.nano.cnr.it].
131. Deep ultraviolet (254 nm) focal plane arrays , SPIE Optics and Photonics Syposium, Conference on
Single Photon Detectors , San Diego, CA -- August 25, 2011.
132. Conference Co-Chair , Conference on Single-Photon Imaging II, SPIE Optics and Photonics
Symposium , San Diego, CA -- August 24, 2011.
133. Conference Co-Chair , Conference on Carbon Nanotubes, Graphene and Associated Devices IV,
SPIE Optics and Photonics Symposium , San Diego, CA -- August 22, 2011.
134. Invited Talk, "Recent advances of terahertz quantum cascade lasers" , SPIE Optics and Photonics
Syposium, Conference on Infrared Remote Sensing and Instrumentation XIX, San Diego, CA -August 21, 2011.
135. Session Chair , Conference on Terahertz Emitters, Receivers and Applications II, SPIE Optics and
Photonics Symposium , San Diego, CA -- August 21, 2011.
136. Conference Co-Chair , Conference on Terahertz Emitters, Receivers and Applications II, SPIE
Optics and Photonics Symposium , San Diego, CA -- August 21, 2011.
137. Member, International Advisory Committee , 15th International Conference on Narrow Gap
Systems (NGS15) , Blacksburg, VA -- August 1, 2011.
138. High Operability 1024 x 1024 Long Wavelength Infrared Focal Plane Array Based on Type-II
InAs/GaSb Superlattice , 15th International Conference on Narrow Gap System (NGS15) ,
Blacksburg, VA -- August 1, 2011, [http://www.phys.vt.edu/~khodapar/NGS15.htm].
139. Room temperature stable and narrow THz emission from quantum cascade lasers based on
intracavity difference frequency generation , 15th International Conference on Narrow Gap System
(NGS15) , Blacksburg, VA -- August 1, 2011.
140. Invited Talk, "Recent Advanced in IR Semiconductor Laser Diodes and Future Trends," Session on
"Progress in Semiconductor Sources" , IEEE Photonics Society Summer Topical Meeting Series ,
Montreal, Canada -- July 18, 2011, [http://www.photonicsconferences.org/SUM2011].
141. Invited Talk, "Recent Quantum Cascade Laser Accomplishments and New Research
Directions" , Technical Interchange Meeting (TIM) , U.S. Naval Research Laboratory, Washington, DC
-- June 1, 2011.
142. Invited Talk, "Overview of Activity at the Center for Quantum Devices (CQD) especially Toward
Realizing High Power Semiconductor Terahertz Laser Source at Room Temperature for Sensing and
Telecommunication" , Samsung Telecommunications America Inc. , Richardson, TX -- May 27, 2011.
143. Invited Talk, High-operating temperature MWIR photon detectors based on Type II InAs/GaSb
superlattice , SPIE Defense, Security and Sensing Syposium, conference on Infrared Technology and
Applications XXXVII , Orlando, FL -- April 28, 2011.
144. Session Co-Chair, Type II Superlattices FPAs I , SPIE Defense, Security and Sensing Syposium,
conference on Infrared Technology and Applications XXXVII , Orlando, FL -- April 26, 2011.
145. Invited Talk, Recent advances in high-performance antimonide-based superlattice FPAs , SPIE
Defense, Security and Sensing Syposium, conference on Infrared Technology and Applications
XXXVII , Orlando, FL -- April 26, 2011.
146. Session Co-Chair, Type II Superlattice FPAs II , SPIE Defense, Security and Sensing Syposium,
conference on Infrared Technology and Applications XXXVII , Orlando, FL -- April 26, 2011.
147. Keynote Talk, Toward realizing high power semiconductor terahertz lasers sources at room
temperature , SPIE Defense, Security and Sensing Syposium, conference on Terahertz Physics,
Devices and Systems V , Orlando, FL -- April 25, 2011.
148. Program Committee , SPIE Defense, Security and Sensing Syposium, conference on Infrared
Technology and Applications XXXVII , Orlando, FL -- April 25, 2011.
149. Invited Talk: Widely tunable, single mode, high power quantum cascade lasers , Integrated
Photonics: Materials, Devices and Applications Conference at SPIE 5th International Symposium on
Microtechnologies for the New Millennium , Prague, Czech Republic -- April 19, 2011.
150. Member, Conference Committee , Integrated Photonics: Materials, Devices and Applications
Conference at SPIE 5th International Symposium on Microtechnologies for the New Millennium ,
Prague, Czech Republic -- April 18, 2011.
151. Distinguished Speaker, "Modern Atomic Engineering: Building Better Optoelectronics from the
Atoms Up" , Centenary Celebrations of the Electrical and Computer Engineering Department at the
University of Dayton , Dayton, OH -- April 8, 2011.
152. III-nitride resonant tunneling devices from growth to fabrication , SPIE Photonics West
Symposium , San Francisco, CA -- January 26, 2011.
153. High power 1D and 2D photonic crystal distributed feedback quantum casacde laser , SPIE
Photonics West Symposium , San Francisco, CA -- January 26, 2011.
154. Use of PLD-grown ZnO thin films and Nanostructures .... , SPIE Photonics West Symposium , San
Francisco, CA -- January 26, 2011.
155. Growth and characterization of long wavelength infrared type II superlattice photodiodes on a 3"
GaSb wafer , Conference on "Quantum Sensing and Nanophotonic Devices VIII," SPIE Photonics
West Symposium , San Francisco, CA -- January 25, 2011.
156. Development of a sacrificial ZnO/c-Al(2)O(3) template approach to enable... , SPIE Photonics West
Symposium , San Francisco, CA -- January 25, 2011.
157. Advances in UV sensitive visible blind GaN-based APDs , SPIE Photonics West Symposium , San
Francisco, CA -- January 25, 2011.
158. High peak power (34 W) photonic crystal distributed feedback quantum cascade lasers , Conference
on "Photonic and Phononic Properties of Engineered Nanostructures," SPIE Photonics West
Symposium , San Francisco, CA -- January 24, 2011.
159. Chair , Conference on "Quantum Sensing and Nanophotonic Devices VIII," SPIE Photonics West
Symposium , San Francisco, CA -- January 24, 2011.
160. Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling
diodes , Conference on "Quantum Sensing and Nanophotonic Devices VIII," SPIE Photonics West
Symposium , San Francisco, CA -- January 24, 2011.
161. Committee Member , Conference on "Oxide-based Materials and Devices II," SPIE Photonics West
Symposium , San Francisco, CA -- January 24, 2011.
162. Committee Member , Conference on "Optoelectronic Integrated Circuits XIII," SPIE Photonics
West Symposium , San Francisco, CA -- January 24, 2011.
163. Committee Member , Conference on "Quantum Dots and Nanostructures..." SPIE Photonics West
Symposium , San Francisco, CA -- January 24, 2011.
164. Opening Remarks , Solid-State and Photonic Initiative (SSPI) Workshop , Evanston, IL -- December
7, 2010.
165. III-Nitride Optoelectronic Devices: From ultraviolet detectors and visible emitters towards terahertz
intersubband devices , IEEE Photonics Society Annual Meeting - Integrated Optics, Optoelectronics
and Interconnect (IOOI) Conference , Denver, CO -- November 10, 2010.
166. Panel Member , National Science Foundation (NSF) SBIR Phase II Proposals - Optical Materials ,
Arlington, VA -- October 14, 2010.
167. Penary Talk, Mastering power and efficiency of mid-infrared semiconductor lasers , European
Semiconductor Laser Workshop (ESLW) , Pavia, Italy -- September 24, 2010.
168. Grant Panel , European Research Council (ERC) , Brussels, Belgium -- September 14, 2010.
169. Member, MIOMD-X Scientific Committee , 10th International Conference on Mid-Infrared
Optoelectronics: Materials and Devices (MIOMD-X) , Shanghai, China -- September 5, 2010.
170. Plenary Talk, State-of-art mid-infrared quantum cascade lasers , 10th International Conference on
Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X) , Shanghai, China -- September 5,
2010.
171. Plenary Talk, Revolutionary development of infrared optoelectronics , 10th International Conference
on Mid-Infrared Optoelectronics: Materials and Devices (MIOMD-X) , Shanghai, China -- September
5, 2010.
172. Plenary Talk, Quantum optoelectronic devices from UV to THz at CQD: Recent advances and future
trends , International Union of Materials Research Society-International Conference on Electronic
Materials (IUMRS-ICEM) , Kintex, Seoul, Korea -- August 22, 2010.
173. Co-Chair , Quantum Structure Infrared Photodetector (QSIP) International Conference , Istanbul,
Turkey -- August 15, 2010.
174. Comparison of APDs grown on c- and m-plane substrates , SPIE Optics and Photonics Symposium ,
San Diego, CA -- August 5, 2010.
175. III-nitride based avalanche photo detectors , SPIE Optics and Photonics Symposium , San Diego, CA
-- August 4, 2010.
176. Conference Co-Chair , Single-Photon Imaging, SPIE Optics and Photonics Symposium , San Diego,
CA -- August 1, 2010.
177. Plenary Talk, Revolutionary development of infrared optoelectronics , 1st International DNTAC
Symposium on Nano Technology , Seoul, Korea -- July 14, 2010.
178. International Advisory Committee , 3rd International Symposium on Growth of III-Nitrides (ISGN3) , Montpellier, France -- July 4, 2010.
179. Grant Panel , European Research Council (ERC) , Brussels, Belgium -- June 7, 2010.
180. Program Committee , Silicon Photonics and Photonic Integrated Circuits Conference, SPIE
Photonics Europe , Brussels, Belgium -- April 12, 2010.
181. Plenary Talk: State-of-art mid-infrared quantum cascade lasers , SPIE Defense and Security
Symposium (DSS) , Orlando, FL -- April 5, 2010.
182. Novel Green Light Emitting Diodes: Innovative Droop-free Lighting Solutions for a Sustainable
Earth , 4th International Conference on LED and Solid State Lighting (LED 2010) , COEX, Seoul,
Korea -- February 3, 2010.
183. Current status and potential of high power mid-infrared intersubband lasers , SPIE International
Photonics West Symposium , San Francisco, CA -- January 25, 2010.
184. High performance quantum dot and quantum well infrared focala plane arrays , SPIE International
Photonics West Symposium , San Francisco, CA -- January 24, 2010.
185. Watt level performance of photonic crystal distributed feedback quantum cascade laser , SPIE
International Photonics West Symposium , San Francisco, CA -- January 23, 2010.
186. Type-II InAs/GaSb Superlattices: A Developing Material System vs. Mercury Cadmium Telluride The State-of-the-Art Infrared Detection Technology , DRS RSTA Inc. - Infrared Technologies
Division , Dallas, TX -- December 14, 2009.
187. Modern Atomic Engineering: Building Better Optoelectronics from the Atoms Up , IEEE Boston
Photonics Society , MIT LIncoln Labs, Lexington, MA -- December 10, 2009.
188. Type II InAs/GaSb superlattices: A developing material system vs. Mercury Cadium Telluride; the
state-of-the-art infrared detection technology , National Research Council Committee on the
Developments in Detector Technoloiges, The National Academies , Washington, DC -- December 8,
2009.
189. Recent advances in quantum cascade lasers at the Center for Quantum Devices , International
Workshop on Terahertz and Mid Infrared Radiation (TERA-MIR): Basic Research and
Applications , Turunc-Marmaris, Turkey -- November 3, 2009.
190. Hybrid Green LEDs with n-type ZnO Substituted for n-type GaN in an Inverted p-n Junction , IEEE
LEOS Photonics Annual Meeting , Belek-Antalya, Turkey -- October 7, 2009.
191. High power, high WPE, CW, RT operation of quantum cascade lasers: Recent results and future
trends , IEEE LEOS Photonics Annual Meeting , Belek-Antalya, Turkey -- October 6, 2009.
192. State of the art Type II superlattices in infrared detection and imaging , IEEE LEOS Photonics
Annual Meeting , Belek-Antalya, Turkey -- October 4, 2009.
193. State-of-the-art Type II antimonide-based superlattice photodiodes for infrared detection and
imaging , SPIE Optics and Photonics Symposium , San Diego, CA -- August 4, 2009.
194. Conference Co-Chair , Conference on Spintronics II, SPIE Optics and Photonics Symposium , San
Diego, CA -- August 2, 2009.
195. Conference Co-Chair , Conference on Biosensing II, SPIE Optics and Photonics Symposium , San
Diego, CA -- August 2, 2009.
196. Conference Co-Chair , Conference on Carbon Nanotubes and Associated Devices II, SPIE Optics
and Photonics Symposium , San Diego, CA -- August 2, 2009.
197. Organizing Committee , Photo-cathode Workshop , University of Chicago (Illinois) -- July 20, 2009.
198. State of the art of Type II superlattices in infrared detection and imaging , International Conference
on Narrow Gap Semiconductors and Systems (NGS-2) , Sendai, Japan -- July 13, 2009.
199. Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared
detection and imaging , International Symposium on Photoelectronic Detection and Imaging ,
Beijing, China -- June 17, 2009.
200. Plenary Talk - III-Nitride Optoelectronic Devices: High Performance GaN Avalanche Photodiodes,
Novel Green Light Emitting Diodes and III-Nitride Intersubband Devices ,AFOSR Joint Electronics
Program Review , Arlington, VA -- May 27, 2009.
201. Quantum dot in a well infrared photodetectors for high operating temperature focal plane
arrays , SPIE International Symposium on Microtechnologies for the New Millennium, Dresden,
Germany -- May 6, 2009.
202. Material and design engineering of (Al)GaN for high-performance avalanche photodiodes and
intersubband applications , SPIE International Symposium on Microtechnologies for the New
Millennium , Dresden, Germany -- May 5, 2009.
203. Program Committee , Photonic Materials, Devices and Applications Conference, SPIE International
Symposium on Microtechnologies for the New Millennium , Dresden, Germany -- May 4, 2009.
204. Background limited performance of long wavelength infrared focal plane arrays fabricated from
Type-II InAs/GaSb M-structure superlattice , SPIE Defense and Security Symposium, Infrared
Technology and Applications XXXV Conference , Orlando, FL -- April 14, 2009.
205. High performance antimony base Type-II superlattice photodiodes on GaAs substrate , SPIE Defense
and Security Symposium, Infrared Technology and Applications XXXV Conference , Orlando, FL -April 14, 2009.
206. Conference Committee , Infrared Technology and Applications XXXV Conference, SPIE Defense
and Security Symposium , Orlando, FL -- April 13, 2009.
207. Modern Optoelectronics: Building Better Materials from the Atoms Up , Invited Colloquium
Speaker, Physics Department, Texas Tech University , Lubbock, TX -- March 6, 2009.
208. III-Nitride avalanche photodiodes , SPIE Photonics West Symposium, Quantum Sensing and
Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
209. Mid-infrared quantum cascade lasers with high wall plug efficiency , SPIE Photonics West
Symposium, Quantum Sensing and Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
210. Pulsed metalorganic chemical vapor deposition of high quality AlN/GaN superlattices for
intersubband transitions , SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic
Devices VI , San Jose, CA -- January 26, 2009.
211. GaN-based nanostructured photodetectors , SPIE Photonics West Symposium, Quantum Sensing
and Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
212. The importance of band alignment in VLWIR type-II InAs/GaSb heterodiodes containing the Mstructure barrier , SPIE Photonics West Symposium, Quantum Sensing and Nanophotonic Devices
VI , San Jose, CA -- January 26, 2009.
213. Background limited performance of long wavelength infrared focal plane arrays fabricated from Mstructure InAs/GaSb superlattices , SPIE Photonics West Symposium, Quantum Sensing and
Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
214. Inductively coupled plasma etching and processing techniques for type-II InAs/GaSb superlattices
infrared detectors toward high fill factor focal plane arrays , SPIE Photonics West Symposium,
Quantum Sensing and Nanophotonic Devices VI , San Jose, CA -- January 26, 2009.
215. Hybrid green LEDs based on n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN , SPIE Photonics
West Symposium, Zinc Oxide Materials and Devices IV , San Jose, CA -- January 25, 2009.
216. Quantum dot in a well infrared photodetectors for high operating temperature focal plane
arrays , SPIE Photonics West Symposium, Quantum Dots, Particles and Nanoclusters VI , San Jose,
CA -- January 25, 2009.
217. High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on
InP/GaInAs/InAlAs material system , SPIE Photonics West Symposium, Novel In-Plane
Semiconductor Lasers VIII , San Jose, CA -- January 25, 2009.
218. Conference Chair , Quantum Sensing and Nanophotonic Devices VI Conference, SPIE International
Photonics West Symposium , San Jose, CA -- January 24, 2009.
219. Program Committee , Conference on Optoelectronic Intergrated Circuits XI, SPIE International
Photonics West Symposium , San Jose, CA -- January 24, 2009.
220. High performance type-II InAs/GaSb superlattice photodiodes for infrared detection and
imaging , Quantum Structure Infrared Photodetector (QSIP) , Yosemite, CA -- January 20, 2009.
221. Quantum dot in a well infrared photodetectors for high operating temperature focal plane
arrays , Quantum Structure Infrared Photodetector (QSIP) , Yosemite, CA -- January 19, 2009.
222. Modern Atomic Engineering: Inspiration from Nature , Distinguished Speaker, EECS Department,
Northwestern University , Evanston, IL -- December 3,
2008,[http://www.eecs.northwestern.edu/video/razeghi.html].
223. High performance type-II InAs/GaSb superlattices photodetectors and focal plane arrays , 26th
Army Conference , Orlando, FL -- December 1, 2008.
224. High performance type-II InAs/GaSb long wavelength infrared photodetectors and focal plane
arrays , U.S. Workshop on the Physics and Chemistry of II-VI Materials , Las Vegas, NV -- November
11, 2008.
225. Building a Better Infrared Laser with Band Structure Engineering , Invited Seminar, Department of
Physics and Optical Science , University of North Carolina at Charlotte -- October 17, 2008.
226. Atomic engineering of low dimensional quantum systems in III-V semiconductors for infrared
detection and imaging , NRO, Invited Seminar , Chantilly, VA -- October 7, 2008.
227. Heterogeneous Monolithic Integration of III-V Semiconductors on GaAs and Si Substrates for Large
Format Infrared Focal Plane Array Development , DARPA Common Platform Composite Wafer
Technology: IR Materials Workshop , Chicago, IL -- October 6, 2008.
228. High Performance QC Lasers: Latest Achievements and Future Trends , International Quantum
Cascade Lasers School and Workshop (IQCLSW) , Monte Verita, Switzerland -- September 14, 2008.
229. Conference Co-Chair , Conference on Spintronics, SPIE Optics and Photonics Symposium , San
Diego, CA -- August 14, 2008.
230. Session Co-Chair, Spin and Charge Currents , Conference on Spintronics, SPIE Optics and
Photonics Symposium , San Diego, CA -- August 12, 2008.
231. Session Chair, Field Emission from CNTs , Conference on Carbon Nanotubes and Associated
Devices, SPIE Optics and Photonics Symposium , San Diego, CA -- August 12, 2008.
232. Very High Performance LWIR Type-II InAs/GaSb Superlattice Photodiodes with MStructure , SPIE Optics and Photonics Symposium, Conference on Advanced Detectors and
Technologies , San Diego, CA -- August 11, 2008.
233. Development of Material Quality and Structural Design for High Performance Type II InAs/GaSb
Superlattice Photodiodes , SPIE Optics and Photonics Symposium, Conference on Advanced
Detectors and Technologies , San Diego, CA -- August 11, 2008.
234. Conference Co-Chair , Biosensing Conference, SPIE Optics and Photonics Symposium , San Diego,
CA -- August 11, 2008.
235. Technical Organizing Committee , NanoScience and NanoEngineering Conference, SPIE Optics and
Photonics Symposium , San Diego, CA -- August 10, 2008.
236. Conference Co-Chair , Conference on Spintronics, SPIE Optics and Photonics Symposium , San
Diego, CA -- August 10, 2008.
237. III-Nitride Based UV Single Photon Detection (APDs) , 2nd International Symposium on Growth of
III-Nitrides (ISGN-2) , Laforet Shuzenji Izu, Japan -- July 6, 2008.
238. Review Panel Member , European Research Council (ERC) , Brussels, Belgium -- June 24, 2008.
239. Panel Member , NASA Proposal Review Panel , Minneapolis, MN -- June 10, 2008.
240. Type II InAs/GaSb Superlattices: A Promising Material System for Infrared , 2008 Euro American
Workshop on Information Optics , Annecy, France -- June 1, 2008.
241. Plenary Talk, New Frontiers in InP Based Quantum Devices , 20th International Conference on
Indium Phosphide and Related Materials (IPRM) 2008 , Versailles, France -- May 25, 2008.
242. Quantum Dots or Artificial Atoms: Solution for High Performance IR Thermal Imaging , Particles
2008 Conference , Orlando, FL -- May 10, 2008.
243. UV laser diodes based on AlGaN nanostructures , 2008 AFRL-AFOSR Nanotechnology Initiative
Review , Fairborn, OH -- May 6, 2008.
244. Keynote Speaker, A Strong History of US-Korea Collaborations with the Center for Quantum
Devices , US-AFOSR/South Korea-MOST Nanoscience Meeting , Arlington, VA -- April 25, 2008.
245. Conference Committee , IR Technology & Applications XXXV Conference, SPIE Defense and
Security Symposium , Orlando, FL -- April 13, 2008.
246. Modeling, Material Growth and Processing, Detector and FPA Fabrication and Characterization
and Comparison of Type-II Superlattice and HgCdTe Performance and Cost ,Type-II Strained
Layer Superlattice (T2SL) IRFPA Workshop , Arlington, VA -- April 8, 2008.
247. Atomic Control of Materials: Building Bloc for High Performance Quantum Devices , Workshop on
Recent Advances of Low Dimensional Structures and Devices , Nottingham, England -- April 7, 2008.
248. New optoelectronic components based on quantum structures , EOS Topical Meeting , Utrecht,
Netherlands -- March 31, 2008.
249. Electrically pumped photonic crystal distributed feedback quantum cascade lasers , MRS
Symposium on Materials and Devices for Laser Remote Sensing & Optical Communication , San
Francisco, CA -- March 24, 2008.
250. Recent Advances in LWIR Type-II InAs/GaSb Superlattice Photodetectors and Focal Plane Arrays
at the Center for Quantum Devices , SPIE Defense and Security Symposium, Infrared Technology
and Applications XXXIV Conference , Orlando, FL -- March 17, 2008.
251. Quest for Material Perfection: Atomic Engineering Shapes the Future , College of Optical Sciences
Colloquium Lecture Series , University of Arizona, Tucson, AZ -- March 6, 2008.
252. Panelist , "Publishing in Academia," Female Researchers in Electrical Engineering and Computer
Science (FREECS) , Northwestern University, Evanston, IL -- February 19, 2008.
253. Beryllium compensation doping of InAs/GaSb infrared superlattice photodiodes , Military Sensors
Symposium (MSS) , Las Vegas, NV -- February 6, 2008.
254. Program Committee, Conference on Quantum Sensing and Nanophotonic Devices V,” SPIE
International Photonics West Symposium , San Jose, CA -- January 24, 2008.
255. High quantum efficiency QDIP and FPA based on self-assembled semiconductor quantum
dots , Workshop on Nano Optoelectronics (WNO) , Seoul, Korea -- January 8, 2008.
256. Review Panel Member , Science Foundation of Ireland , Cork, Ireland -- November 23, 2007.
257. State-of-the-Art Type II Superlattices , Missile Defense Agency (MDA)-Lockheed Martin Industry
Day , Sunnyvale, CA -- November 13, 2007.
258. Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector
operating at high temperature , IEEE LEOS Conference , Orlando, FL -- October 22, 2007.
259. Scientific Committee, 3rd International American Filtration Society (AFS) Conference on Emission
Solutions in Transportation , Ann Arbor, MI -- October 18, 2007.
260. High performance type-II InAs/GaSb long wavelength infrared photodetectors and focal plane
arrays , Advanced Infrared Technology and Applications 9 (AITA) , Leon, Guanajuato, Mexico -October 9, 2007.
261. Quantum Well and Quantum Dot-Based IR Detectors , Session Organizer, Advanced Infrared
Technology and Applications (AITA) International Workshop , Leon, Guanajuato, Mexico -- October
8, 2007.
262. Self-Assembled Semiconductor Quantum Dot Infrared Photodetector Operating at Room
temperature and Focal Plane Array , Advanced Infrared Technology and Applications (AITA)
International Workshop , Leon, Guanajuato, Mexico -- October 8, 2007.
263. Session Organizer, Quantum Dot Infrared Photodetectors , Advanced Infrared Technology and
Applications (AITA) International Workshop , Leon, Guanajuato, Mexico -- October 8, 2007.
264. Research progress in type-II superlattice photodiodes for the long wavelength infrared at CQD , Air
Force Research Laboratory , Kirtland AFB, NM -- September 27, 2007.
265. Quantum Dot IR Detectors , Workshop on Nanoscale Epitaxial Semiconductor Structures (NESS) ,
Albuquerque, NM -- September 26, 2007.
266. Evaluation Panel Meeting - Swedish Research Council , Stockholm, Sweden -- September 4, 2007.
267. Current Status of Type II InAs/GaSb Superlattices MWIR-LWIR Photodiodes and FPA at the
Center for Quantum Devices , Conference on Infrared Spaceborne Remote Sensing and
Instrumentation XV, SPIE International Symposium on Optics and Photonics , San Diego, CA -August 30, 2007.
268. InAs Quantum Dots for High Performance Thermal Imaging Operating at High
Temperature , Particle-Based Device Technologies , Toronto, Canada -- August 20,
2007,[http://nanoparticles.org/Particles2007/].
269. Session Chair, General Session 2 , Particle-Based Device Technologies , Toronto, Canada -- August 19,
2007.
270. Keynote Address: Quantum Sensing Through Nano-Photonics: Inspiration from Nature , 6th Euro
American Workshop on Information Optics , Reykjavik, Iceland -- June 27, 2007.
271. Thermal Imaging based on High-Performance InAs/InP Quantum-Dot Infrared Photodetector
Operating at High Temperature , Nanoelectronic Devices for Defense and Security (NANO-DDS) ,
Crystal City, VA -- June 20, 2007.
272. On the performance of type-II superlattice photodiodes for the long wavelength infrared , 2nd Spacebased Sensing and Protection Conference , Kirtland AFB, NM -- May 31, 2007.
273. Band Gap Lasers -- Session Chair , MIOMD-8 Conference , Bad Ischl, Austria -- May 16, 2007.
274. Current Status of High Performance Quantum Cascade Lasers at the Center for Quantum
Devices , Conference on Indium Phosphide and Related Materials (IPRM'07) , Kunibiki Messe,
Matsue-shi, Shimane Pref., Japan -- May 14, 2007.
275. Program Committee, MIOMD-8 Conference , Bad Ischl, Austria -- May 14, 2007.
276. Infrared Imaging Using Quantum Dot Infrared Photo Detectors , MIOMD-8 Conference , Bad Ischl,
Austria -- May 14, 2007.
277. Telecom Amplifiers -- Session Chair , Conference on Photonic Materials, Devices and Applications,
SPIE International Symposium on Mircotechnologies for the New Millennium , Gran Canaria, Spain -May 4, 2007.
278. Program Committee, Conference on Photonic Materials, Devices and Applications, SPIE
International Symposium on Mircotechnologies for the New Millennium , Gran Canaria, Spain -- May
2, 2007.
279. High Power Mid- and Far-Wavelength Infrared Lasers for Free Space Communications , Conference
on Photonic Materials, Devices and Applications, SPIE International Symposium on
Mircotechnologies for the New Millennium , Gran Canaria, Spain -- May 2, 2007.
280. Self-assembled Semiconductor Quantum Dot Infrared Photodetector Operating at Room
temperature and Focal Plane Array , Conference on Photonic Materials, Devices and Applications,
SPIE International Symposium on Mircotechnologies for the New Millennium , Gran Canaria, Spain -May 2, 2007.
281. Steering Committee, Sixth International Conference on Low Dimensional Structures and Devices
(LDSD 2007) , The Archipelago of San Andres, Colombia -- April 15, 2007.
282. Infrared Imaging with Quantum-Dot Infrared Photodetectors , Sixth International Conference on
Low Dimensional Structures and Devices (LDSD 2007) , The Archipelago of San Andres, Colombia -April 15, 2007.
283. Type II Super Lattice FPAs II , Session Chair, SPIE Conference on Infrared Technology and
Application, Defense and Security Symposium , Orlando, FL -- April 9, 2007.
284. Type II Super Lattice FPAs I , Session Chair, SPIE Conference on Infrared Technology and
Application, Defense and Security Symposium , Orlando, FL -- April 9, 2007.
285. Self-Assembled Semiconductor Quantum Dot Infrared Photodetector Operating at Room
temperature and Focal Plane Array , SPIE Conference on Infrared Technology and Application,
Defense and Security Symposium , Orlando, FL -- April 9, 2007.
286. 256x256 Infrared Focal Plane Array Based on Type II InAs/GaSb Superlattice with a 12 mm Cutoff
Wavelengt , SPIE Conference on Infrared Technology and Application, Defense and Security
Symposium , Orlando, FL -- April 9, 2007.
287. The Quantum Cascade Laser: A Fast, Convenient Tool for Trace Chemical Detection , American
Filtration and Separations Society (AFS) Annual Conference, Homeland Security Session , Orlando,
FL -- March 27, 2007.
288. Infrared Imaging by High Performance Quantum Dot Infrared Photodetector Operating at High
Temperature , Optical Society of America (OSA), Optical Fiber Communication (OFC) Conference ,
Anaheim, CA -- March 25, 2007.
289. Self-assembled Semiconductor Quantum Dot Infrared Photodetector Operating at Room
temperature and Focal Plane Array , Nano and Giga Challenges (NGC) in Electronics and Photonics
Symposium , Phoenix, AZ -- March 12, 2007.
290. High Performance QDIP with High Quantum Efficiency and High Operating
Temperature , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) ,
Savannah, GA -- February 18, 2007.
291. Optimization of Mid-Wave Quantum Cascade Lasers for Highly Efficient Operation , Efficient MidWave Infrared Lasers (EMIL) Kickoff Meeting, DARPA/ONR , Washington, DC -- February 16, 2007.
292. Quantum Sensing and Nanophotonic Devices IV , Chair, SPIE International Photonics West
Symposium, San Jose , San Jose, CA -- January 20, 2007.
293. Optoelectronic Integrated Circuits (OEIC)XI , Program Committee, SPIE International Photonics
West Symposium , San Jose, CA -- January 20, 2007.
294. Zinc Oxide Materials and Devices II , Program Committee,SPIE International Photonics West
Symposium , San Jose, CA -- January 20, 2007.
295. Thin Film Epitaxy and Interfaces , Session Chair, SPIE International Photonics West Symposium,
Zinc Oxide Materials and Devices II , San Jose, CA -- January 20, 2007.
296. Spintronics I , Session Chair, SPIE International Photonics West Symposium, Quantum Sensing and
Nanophotonic Devices IV , San Jose, CA -- January 20, 2007.
297. Hot Subjects , Session Chair, SPIE International Photonics West Symposium, Quantum Sensing and
Nanophotonic Devices IV , San Jose, CA -- January 20, 2007.
298. Quantum Cascade Lasers Emitting at Wavelengths Shorter than 4 mm , SPIE International
Photonics West Symposium, Novel In-Plane Semiconductor Lasers VI , San Jose, CA -- January 20,
2007.
299. Type_II InAs/GaSb Superlattice Focal Plane Arrays for High-Performance Third Generation
Infrared Imaging and Free-Space Communications , SPIE International Photonics West Symposium,
Optoelectronic Integrated Circuits (OEIC) XI , San Jose, CA -- January 20, 2007.
300. III-Nitride Avalanche Photodiodes , SPIE International Photonics West Symposium, Quantum
Sensing and Nanophotonic Devices IV , San Jose, CA -- January 20, 2007.
301. Type-II M Structure Photodiodes: An Alternative Material Design for Mid-Wave to Long
Wavelength Infrared Regimes , SPIE International Photonics West Symposium, Quantum Sensing
and Nanophotonic Devices IV , San Jose, CA -- January 20, 2007.
302. Techniques for High Quality SiO2 Films , SPIE International Photonics West Symposium, Quantum
Sensing and Nanophotonic Devices IV , San Jose, CA -- January 20, 2007.
303. Dry Etching of ZnO Towards the Development of ZnO Homostructure LEDs , SPIE International
Photonics West Symposium, Zinc Oxide Materials and Devices , San Jose, CA -- January 20, 2007.
304. Infrared Imaging with self-assembled InGaAs Quantum Dot Infrared Photodetectors , 25th U.S.
Army Science Conference , Orlando, FL -- November 27, 2006.
305. International Scientific Committee, Conference on Advanced Optoelectronics and Lasers (CAOL
�2006) , Guanajuato, Mexico -- November 7, 2006.
306. Recent Advances in High Power Mid-and Far-Wavelength Infrared Lasers for Free Space
Communication , SPIE Optics East , Boston, MA -- October 1, 2006.
307. Type-II Superlattice Photodetectors for Mid-Wavelength Infrared to Long-Wavelength Infrared
Focal Plane Arrays , SPIE Optics East , Boston, MA -- October 1, 2006.
308. Mid-Infrared Quantum Cascade Lasers at the Center for Quantum Devices , CLEO/EQEC Europe
Conference , Pisa, Italy -- September 10, 2006.
309. High Power, High Reliability Quantum Cascade Lasers at the Center for Quantum Devices , 2nd
International Workshop on Quantum Cascade Lasers , Rosa Marina, Ostuni, Italy -- September 5,
2006.
310. Applications and Industrial Development of QCLs II , Session Chair, 2nd International Workshop
on Quantum Cascade Lasers , Rosa Marina, Ostuni, Italy -- September 5, 2006.
311. High Performance Mid-Wavelength Quantum Dot Infrared Photodetectors for Focal Plane
Arrays , SPIE Optics and Photonics, Infrared Spaceborne Remote Sensing XIV Conference , San
Diego, CA -- August 13, 2006.
312. First Demonstration of 10 mm FPAs in InAs/GaSb Superlattices , IEEE LEOS Summer Topical
Meeting on Infrared Sensors, , Quebec City, Canada -- July 17, 2006.
313. Quantum Well Infrared Photodetectors , Session Chair, IEEE LEOS Summer Topical Meeting on
Infrared Sensors , Quebec City, Canada -- July 17, 2006.
314. Quantum Sensing Through Nano-Optoelectronics: Inspiration from Nature , Invited Seminar at
Physics Department, Ecole Normale , Cachan, France -- July 13, 2006.
315. Conference Technical Program Committee, International Conference on Laser and Fiber-Optical
Networks Modeling (LFNM 2006) , Kharkov, Ukraine -- June 29, 2006.
316. QWIP vs QDIP , QWIP 2006 Conference , Sri Lanka -- June 18, 2006.
317. Novel Directions (Multi/Broad Band Detectors) , Session Chair, QWIP 2006 Conference , Sri Lanka -June 18, 2006.
318. Detector Panel Discussion , Panel Member, QWIP 2006 Conference , Sri Lanka -- June 18, 2006.
319. Research Collaboration Panel Discussion , Panel Member, QWIP 2006 Conference , Sri Lanka -- June
18, 2006.
320. High Power, High Reliability Quantum Cascade Lasers at the Center for Quantum Devices , Solid
State and Diode Laser Technology Review (SSDLTR) , Albuquerque, NM -- June 13, 2006.
321. Quantum Dots in GaInP/GaInAs/GaAs for Infrared Sensing , International Conference on Modern
Materials and Technologies (CIMTEC) , Acireale, Sicily, Italy -- June 4, 2006.
322. Long-Wavelength Infrared Focal Plane Arrays based on InGaAs/GaAs/InGaP Quantum-dot
Infrared Photodetectors (QDIPs) grown by MOCVD , CLEO/QELS Conference , Long Beach, CA -May 21, 2006.
323. First Demonstration of 270 nm AlGaN solar-blind p-i-n Avalanche Photodiodes , 30th Workshop on
Compound Semiconductor Devices and Integrated Circuits (WOCSDICE2006) , Fiskebackskil,
Sweden -- May 14, 2006.
324. Infrared Sensing with Nanostructures: High Sensitivity InGaAs Quantum Dot Photodetectors for
Focal Plane Arrays , 30th Workshop on Compound Semiconductor Devices and Integrated Circuits
(WOCSDICE2006) , Fiskebackskil, Sweden -- May 14, 2006.
325. Type II Superlattice Infrared Photodetectors for MWIR to VLWIR Focal Plane Arrays , SPIE
Infrared Technology & Applications Conference , Orlando, FL -- April 17, 2006.
326. Quantum-Dot Infrared Photodetectors and Focal Plane Arrays , SPIE Infrared Technology &
Applications Conference , Orlando, FL -- April 17, 2006.
327. Program Committee, SPIE Europe Conference on Nanophotonics , Strasbourg, France -- April 3, 2006.
328. Layers and Gratings , Session Chair, SPIE Europe Conference on Nanophotonics , Strasbourg, France
-- April 3, 2006.
329. Quantum Sensing Through Nano-Optoelectronics: Inspiration from Nature , Invited Seminar at
Kansas State University , Manhattan, KS -- March 27, 2006.
330. U.S.-Japan Young Researchers Exchange Program for Nanotechnology and
Nanomanufacturing , Host, Site Visit sponsored by the National Science Foundation , Evanston, IL -March 10, 2006.
331. High-Power, Continuous-Wave Quantum Cascade Lasers Operating at Room
Temperature , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) ,
Scottsdale, AZ -- February 19, 2006.
332. Survival Skills for Female Graduate Students and Junior Faculty , Northwestern University
Women�s Center , Evanston, IL -- February 15, 2006.
333. Quantum Sensing and Nanophotonic Devices III , Chair, SPIE International Photonics West
Symposium , San Jose, CA -- January 21, 2006.
334. InAs quantum dot infrared photodetectors on InP by MOCVD , SPIE International Photonics West
Symposium, Quantum Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
335. Quantum dot infrared photodetectors: Comparison of experiment and theory , SPIE International
Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III, San Jose, CA -- January
21, 2006.
336. Performance characteristics of high-purity mid-wave and long-wave infrared type-II InAs/GaSb
superlattice infrared photodiodes , SPIE International Photonics West Symposium, Quantum
Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
337. Optical coatings for improved performance of quantum cascade lasers by ion-beam sputtering
deposition and comparison to other techniques , SPIE International Photonics West Symposium,
Quantum Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
338. InGaAs/InGaP/GaAs quantum dot infrared photodetector focal plane array development , SPIE
International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San
Jose, CA -- January 21, 2006.
339. InGaAs/InGaP quantum-dot infrared photodetector with a high detectivity , SPIE International
Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San Jose, CA -January 21, 2006.
340. Positive and negative luminescence in binary type II InAs/GaSb superlattice photodiodes , SPIE
International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San
Jose, CA -- January 21, 2006.
341. High Power, Continuous-Wave, Quantum Cascade Lasers for MWIR and LWIR Applications , SPIE
International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices III , San
Jose, CA -- January 21, 2006.
342. Solar-Blind Avalanche Photodiodes , SPIE International Photonics West Symposium, Quantum
Sensing and Nanophotonic Devices III , San Jose, CA -- January 21, 2006.
343. Dry Etching of ZnO Towards the Development of ZnO Homostructure LEDs , SPIE International
Photonics West Symposium, Zinc Oxide Materials and Devices , San Jose, CA -- January 21, 2006.
344. IEEE International Electron Devices Meeting (IEDM) , Washington, DC -- December 5, 2005.
345. Mid-Infrared Quantum Cascade Lasers for High Temperature Applications , 2nd Symposium on IR
Materials and Technologies , State College, PA -- November 21, 2005.
346. DARPA Workshop on Standoff Detection of IEDs (Improvised Explosive Devices) , Arlington, VA -November 15, 2005.
347. American Physical Society (APS) Annual Meeting , Tucson, AZ -- October 16, 2005.
348. Infrared Sensing Technology with Nanostructures � Quantum Dot and Nanopillar , Nanostructured
Materials: Environmental, Energy, and Sensing Applications Symposium , Barga, Italy -- September
18, 2005.
349. High Power, CW, RT, DFB-CQD Lasers Emitting at 4.8 Microns , International Conference on
Advanced Optoelectronics and Lasers (CAOL 2005) , Yalta, Crimea, Ukraine -- September 12, 2005.
350. High power, CW, QCLs operating at high temperature , MIOMD-VII , Lancaster, United Kingdom -September 12, 2005.
351. Quantum Dot Infrared Photodetectors & Focal Plane Arrays , MIOMD-VII , Lancaster, United
Kingdom -- September 12, 2005.
352. Session Chair, MIOMD-VII , Lancaster, United Kingdom -- September 12, 2005.
353. High Temperature, High Power, CW Operation of Quantum Cascade Lasers , 8th International
Conference on Intersubband Transitions in Quantum Wells (ITQW�20005) , Cape Cod, MA -September 11, 2005.
354. Type II InAs/GaSb Superlattice as an Excellent Candidate for the Next Generation Infrared
FPAs , SPIE International Congress on Optics and Optoelectronics , Warsaw, Poland -- August 28,
2005.
355. AlGaN p-n Junctions for 280 nm APDs and UV Lasers , DARPA Workshop on Deep Ultraviolet
Photodetectors , Arlington, VA -- August 26, 2005.
356. International Advisory Committee, International Conference on Materials for Advanced
Technologies (ICMAT-2005) , Singapore -- July 3, 2005.
357. Recent Improvements in Quantum Cascade Lasers at the Center for Quantum Devices , 12th
international Conference on Narrow Gap Semiconductors (NGS) , Toulouse, France -- July 3, 2005.
358. QWIP, QDIP, and FPA at Center for Quantum Devices , 12th international Conference on Narrow
Gap Semiconductors (NGS) , Toulouse, France -- July 3, 2005.
359. Recent Achievements of Type II InAs/GaSb Superlattices for LWIR Focal Plane Arrays , 12th
International Conference on Narrow Gap Semiconductors (NGS) , Toulouse, France -- July 3, 2005.
360. Recent Advances in 3-5 mm InGaAs/InAlAs/InP Quantum Cascade Lasers , CLEO/EUROPE-EQEC
Conference , CLEO/EUROPE-EQEC Conference -- June 12, 2005.
361. Quantum Cascade and Long Wavelength Lasers I , Session Chair, CLEO/EUROPE-EQEC
Conference , Munich, Germany -- June 12, 2005.
362. Quantum Cascade Laser Development at the Center for Quantum Devices , Solid State and Diode
Laser Technology Review (SSDLTR) , Los Angeles, CA -- June 7, 2005.
363. Recent Results from SLS FPAs , III-V IR Detectors Workshop at Army Research Laboratory ,
Adelphi, MD -- May 28, 2005.
364. Short-wavelength Ultraviolet Light-Emitting Diodes Based on AlGaN , CLEO/QELS Conference ,
Baltimore, MD -- May 22, 2005.
365. High-Power, Continuous-Wave, DFB-Quantum Cascade Lasers Operating Above Room
Temperature , CLEO/QELS Conference , Baltimore, MD -- May 22, 2005.
366. Photonics and Optoelectronics Conference , Program Committee, SPIE 2nd International
Symposium on Microtechnologies for the New Millennium 2005 , Sevilla, Spain -- May 9, 2005.
367. Organic Lasers and LEDs , Session Chair, SPIE 2nd International Symposium on Microtechnologies
for the New Millennium 2005 , Sevilla, Spain -- May 9, 2005.
368. Focal Plane Arrays Based on Quantum Dot Infrared Photodetectors , SPIE 2nd International
Symposium on Microtechnologies for the New Millennium 2005, Nanotechnology II Conference ,
Sevilla, Spain -- May 9, 2005.
369. High Power, Continuous-Wave, Mid-Infrared Quantum Cascade Lasers based on Strain-Balanced
Heterostructures , SPIE 2nd International Symposium on Microtechnologies for the New Millennium
2005, Photonics and Optoelectronics Conference , Sevilla, Spain -- May 9, 2005.
370. DARPA L-PAS Project Review Meeting at Pranalytica, Inc. , Santa Monica, CA -- April 18, 2005.
371. DARPA L-PAS PI Review Meeting , Laguna Beach, CA -- April 18, 2005.
372. High Performance Type II InAs/GaSb Superlattices for Mid, Long, and Very Long Wavelength
Infrared Focal Plane Arrays , SPIE International Defense and Security Symposium, Infrared
Technology and Applications XXXI Conference , Orlando, FL -- March 28, 2005.
373. Quantum Dot Based Focal Plane Arrays for Infrared Sensing , AFRL Nano Materials for Defense
Applications Symposium , Kona, Hawaii -- February 21, 2005.
374. Quantum Sensing and Nanophotonic Devices II , Chair, SPIE International Photonics West
Symposium , San Jose, CA -- January 22, 2005.
375. VLSI Microphotonics: Miniaturization, Interconnection and Interaction , Co-Chair, SPIE
International Photonics West Symposium , San Jose, CA -- January 22, 2005.
376. High-Power Quantum Cascade Lasers , SPIE International Photonics West Symposium, Novel InPlane Semiconductor Lasers IV Conference , San Jose, CA -- January 22, 2005.
377. Deep Ultraviolet Light-Emitting Diodes and Photodetectors for UV Communication , SPIE
International Photonics West Symposium, Optoelectronic Integrated Circuits IX , San Jose, CA -January 22, 2005.
378. Back-Illuminated Solar-Blind Photodetectors for Imaging Applications , SPIE International
Photonics West Symposium, Optoelectronic Integrated Circuits IX , San Jose, CA -- January 22, 2005.
379. Steering Committee, 5th International Conference on Low Dimensional Structures and Devices
(LDSD 2004) , Cancun, Mexico -- December 12, 2004.
380. AlGaN-based Deep Ultraviolet Light-Emitting Diodes with Emission Wavelength Below 255 nm , 5th
International Conference on Low Dimensional Structures and Devices (LDSD 2004) , Cancun, Mexico
-- December 12, 2004.
381. High Power Quantum Cascade Lasers in the 3-12 mm Wavelength Range , IEEE LEOS
Semiconductor Laser Conference , Rio Grande Province, Puerto Rico -- November 7, 2004.
382. QCL Progress and Outlook , SPIE Europe Symposium on Optics/Photonics in Security and Defence,
Optically Based Biological and Chemical Sensing for Defence , London, United Kingdom -- October 27,
2004.
383. National Science Foundation (NSF) Site Team for Science and Technology Center Proposal Review,
University of South Carolina , Columbia, SC -- October 24, 2004.
384. Overview of Activities in IR at the Center for Quantum Devices , Symposium on Infrared Materials
and Technologies, Pennsylvania State University , University Park, PA -- October 4, 2004.
385. Type II Superlattices for Photodetection , DoD Advisory Group on Electron Devices Special
Technology Area Review on High Operating Temperature Near Blip Infrared Detectors , Arlington,
VA -- September 29, 2004.
386. Overview of High Power, High Temperature, CW Operation of InP based Quantum Cascade Lasers
(QCL) in the Center for Quantum Devices (CQD) at Northwestern University , 5th Quantum
Cascade Laser (QCL) Workshop , Freiburg, Germany -- September 23, 2004.
387. LWIR Focal Plane Array Based on Type-II InAs/GaSb Superlattices , Focal Plane Array Missile
Defense Agency/AS Industry Day Meeting , Falls Chruch, VA -- September 14, 2004.
388. DARPA Laser Photoacoustic Spectroscopy (L-PAS) Program Kickoff Meeting , Seattle, WA -September 1, 2004.
389. Atomic Engineering of AlGaN for Deep UV Optoelectronic Devices - Contributions from the Center
for Quantum Devices , AFOSR Workshop on Nanoscale Issues Nitride Semiconductors , Anchorage,
Alaska -- August 22, 2004.
390. High Temperature Operation InAs Quantum Dot Infrared Photodetectors (QDIP) on InP by
MOCVD , SPIE Conference on Infrared Spaceborne Remote Sensing , Denver, CO -- August 2, 2004.
391. Growth and Characterization of InGaAs/InGaP Quantum Dots for Middle-Wavelength Infrared
Focal Plane Array Application , SPIE Conference on Infrared Spaceborne Remote Sensing , Denver,
CO -- August 2, 2004.
392. InP X-ray Detector , DARPA Workshop on X-ray Detectors for Military Space Applications ,
Arlington, VA -- June 30, 2004.
393. Member of the Scientific Committee, MIOMD-VI Conference , St. Petersburg, Russia -- June 28, 2004.
394. Photodetection-I , Session Chai, MIOMD-VI Conference , St. Petersburg, Russia -- June 28, 2004.
395. Short Wavelength Quantum Cascade Lasers for High Temperature Operation , MIOMD-VI
Conference , St. Petersburg, Russia -- June 28, 2004.
396. From Atomic Engineering to Artificial Atoms: Enabling Technologies for the Next Generation of
Photonics , National Reconnaissance Office (NRO) JASON Panel Committee Meeting , La Jolla, CA -June 15, 2004.
397. High Power Quantum Cascade Lasers at the Center for Quantum Devices , Solid State and Diode
Laser Technology Review (SSDLTR) , Albuquerque, NM -- June 8, 2004.
398. High Power Quantum Cascade Lasers , CLEO/IQEC Conference , San Francisco, CA -- May 16, 2004.
399. Quantum Dot Infrared Photodetectors (QDIPs) by MOCVD and QDIP Focal Plane
Array , CLEO/IQEC Conference , San Francisco, CA -- May 16, 2004.
400. Recent Advances in Quantum Cascade Lasers at CQD/NU , U.S.-Korea Workshop on
Nanoelectronics , Seoul, Korea -- May 10, 2004.
401. Mimicking Nature with Photonic Technologies , Keynote Speaker, SPIE Photonics Europe ,
Strasbourg, France -- April 26, 2004.
402. Nanotechnology at the Center for Quantum Device , Solid State Physics Department, University of
Sao Paulo , Sao Paulo, Brazil -- March 30, 2004.
403. III-Nitride Optoelectronic Materials and Devices at the Center for Quantum Devices , 3rd Annual
Meeting of the Cooperative Network for Research on Semiconductor Nanodevices and
Nanostructured Materials (NanoSemiMat-3) , Salvador, Brazil -- March 24, 2004.
404. QDIP vs. QWIP: Theory and Experiment , American Physical Society Meeting, Optical Properties of
Nanostructures and Nanophotonics , Montreal, Canada -- March 22, 2004.
405. International Advisory Committee, 5th International Symposium on Blue Laser and Light Emitting
Diodes (ISBLLED-2004) , Gyeongju, Korea -- March 16, 2004.
406. Evolution of III-Nitride Technology for Ultraviolet Optoelectronics Applications , 5th International
Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004) , Gyeongju, Korea -- March
16, 2004.
407. High Sensitivity Quantum-Dot Infrared Photodetectors and Focal Plane Arrays Developed at the
Center for Quantum Devices , 2nd Annual U.S. Air Force Research Lab Nano Materials for Defense
Applications Symposium, Sensor Materials Session , Wailea, Maui, Hawaii -- February 19, 2004.
408. Quantum Sensing and Nanophotonic Devices , Chair, SPIE International Photonics West
Symposium , San Jose, CA -- January 24, 2004.
409. Quantum Dots, Nanoparticles, and Nanoclusters , Program Committee, SPIE International
Photonics West Symposium , San Jose, CA -- January 24, 2004.
410. Optoelectronic Integrated Circuits VIII , Program Committee, SPIE International Photonics West
Symposium , San Jose, CA -- January 24, 2004.
411. High Quantum Efficiency Solar-Blind Photodetectors , SPIE International Photonics West
Symposium, Quantum Sensing and Nanophotonic Devices , San Jose, CA -- January 24, 2004.
412. High Power and Reliable Semiconductor Laser Diodes for WDM Application , SPIE International
Photonics West Symposium, Optoelectronic Integrated Circuits VIII , San Jose, CA -- January 24,
2004.
413. Nanopillars for Bandgap-Engineering in III-V Optoelectronic Devices , SPIE International Photonics
West Symposium, Quantum Dots, Nanoparticles, and Nanoclusters , San Jose, CA -- January 24, 2004.
414. Modeling Type II InAs/GaSb Superlattices Using Empirical Tight-Binding Method: Interface
Engineering , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic
Devices , San Jose, CA -- January 24, 2004.
415. High Power Room Temperature Continuous-Wave Operation of Quantum Cascade Lasers
GasMBE , SPIE International Photonics West Symposium, Quantum Sensing and Nanophotonic
Devices , San Jose, CA -- January 24, 2004.
416. Growth of Deep UV Light Emitting Diodes by Metalorganic Chemical Vapor Deposition , SPIE
International Photonics West Symposium, Quantum Sensing and Nanophotonic Devices , San Jose,
CA -- January 24, 2004.
417. Nanophotonics and Quantum Sensing at the Center for Quantum Devices at ECE/NU , SPIE
International Photonics West Symposium, Nano Technical Group Meeting , San Jose, CA -- January
24, 2004.
418. Overview of Research Activities in the Center for Quantum Devices , Northrop Grumman
Corporation , Rolling Meadows, IL -- January 15, 2004.
419. The Route to High-Power, Continuous-Wave, Quantum Cascade Lasers at Room
Temperature , International Workshop on Quantum Cascade Lasers , Sevilla, Spain -- January 4,
2004.
420. International Advisory Committee, 12th International Workshop on the Physics of Semiconductor
Devices (IWPSD) , Madras, Chennai, India -- December 16, 2003.
421. Session Chair, 12th International Workshop on the Physics of Semiconductor Devices (IWPSD) ,
Madras, Chennai, India -- December 16, 2003.
422. Deep Ultraviolet AlGaN Light-Emitting Diodes , 12th International Workshop on the Physics of
Semiconductor Devices (IWPSD) , Madras, Chennai, India -- December 16, 2003.
423. High Power CW, RT Operation of Quantum Cascade Lasers , 12th International Workshop on the
Physics of Semiconductor Devices (IWPSD) , Madras, Chennai, India -- December 16, 2003.
424. Proposal Review Panel, National Science Foundation (NSF), Nano Science and Engineering
Program , Arlington, VA -- December 9, 2003.
425. International Engineering Consortium (IEC) Executive ComForum , Palm Beach, FL -- November 6,
2003.
426. High Power AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Metalorganic Chemical Vapor
Deposition , Brazilian Materials Research Society Meeting , Rio de Janeiro, Brazil -- October 26, 2003.
427. Cascaded Lasers I , Session Chair, Optical Society of America (OSA) , Tucson, AZ -- October 7, 2003.
428. High Performance Quantum Cascade Lasers at the Center for Quantum Devices , Optical Society of
America (OSA), Frontiers in Optics � Laser Science XIX , Tucson, AZ -- October 7, 2003.
429. High Power Deep UV AlGaN Light-Emitting Diodes , Optical Society of America (OSA), Frontiers in
Optics � Laser Science XIX , Tucson, AZ -- October 7, 2003.
430. Materials Issues for Future Mid-IR Sources and Detectors , Army Research Office (ARO) Workshop
on Infrared Physics and Applications , Ann Arbor, MI -- September 29, 2003.
431. High Power Deep UV Light Emitting Diodes by Metalorganic Chemical Vapor Deposition , 8th Wide
Bandgap III-Nitride Workshop , Richmond, VA -- September 29, 2003.
432. DARPA/MTO Photonic WASSP Program Review , Chicago, IL -- September 23, 2003.
433. Type II InAs/GaSb Superlattices for High-Performance Photodiodes and FPAs , SPIE Conference on
Active and Passive Optical Components for WDM Communications III , Orlando, FL -- September 7,
2003.
434. IEEE/LEOS International Conference on Optical MEMS , Waikoloa, Hawaii -- August 18, 2003.
435. Recent Advances in Type II InAs/GaSb VLWIR Detectors , International Conference on Computer,
Communication and Control Technologies (CCCT �03) , Orlando, FL -- July 31, 2003.
436. Very High Average Power Quantum Cascade Lasers by GasMBE , Solid State and Diode Laser
Technology Review (SSDLTR) , Albuquerque, NM -- May 20, 2003.
437. Type II SLS , Missile Defense Agency (MDA)/AS EO/IR Program Review , Arlington, VA -- May 20,
2003.
438. Recent Advances in GaSb/InAs Superlattices for VLWIR Detector at CQD , Space-Based EO/IR
Surveillance Technology Conference , Kirtland AFB, NM -- May 13, 2003.
439. Passivation of Type II InAs/GaSb Superlattice Photodiodes , New Horizons in Coatings and Thin
Films, International Conference on Metallurgical Coatings and Thin Films , San Diego, CA -- March
28, 2003.
440. Ring Filter and Wavelength Division Multiplexer (WDM) , DARPA Optical Domain Workshop ,
Arlington, VA -- March 18, 2003.
441. Improvement in output power of UV LEDs utilizing Current Blocking Layers , Workshop on
Compound Semiconductor Materials and Devices (WOCSEMMAD) , Atlanta, GA -- February 16,
2003.
442. Type II InAs/GaSb Superlattice Infrared Photodiodes , Workshop on Compound Semiconductor
Materials and Devices (WOCSEMMAD) , Atlanta, GA -- February 16, 2003.
443. The First Infrared Focal Plane Arrays based on GaInAs/InP QWIP , Workshop on Compound
Semiconductor Materials and Devices (WOCSEMMAD) , Atlanta, GA -- February 16, 2003.
444. High Performance Quantum Cascade Lasers at l -6 mm , Workshop on Compound Semiconductor
Materials and Devices (WOCSEMMAD) , Atlanta, GA -- February 16, 2003.
445. Development of AlGaN Based UV LED and Lasers (l ~ 280 nm) , DARPA SUVOS Program Review ,
Dana Point, CA -- February 5, 2003.
446. Quantum Sensing: Evolution and Revolution from Past to Future , Co-Chair, SPIE International
Symposium on Optoelectronics 2003 , San Jose, CA -- January 25, 2003.
447. Optoelectronic Integrated Circuits (OEIC�s) , Technical Program Committee, SPIE International
Symposium on Optoelectronics 2003 , San Jose, CA -- January 25, 2003.
448. Optoelectronic Integrated Circuits (OEIC�s) , Session Chair, SPIE International Symposium on
Optoelectronics 2003 , San Jose, CA -- January 25, 2003.
449. OEIC for Next Generation WDM Communications , SPIE International Symposium on
Optoelectronics 2003, Optoelectronic Integrated Circuits (OEIC�s) , San Jose, CA -- January 25,
2003.
450. Secrets Behind the Invention of High Power Al-free Semiconductor Lasers , SPIE International
Symposium on Optoelectronics 2003, Women in Optics Working Group Meeting, San Jose, CA -January 25, 2003.
451. Quantum Sensing Using Artificial Atoms: Inspiration from Nature , SPIE International Symposium
on Optoelectronics 2003, Quantum Sensing: Evolution and Revolution from Past to Future , San Jose,
CA -- January 25, 2003.
452. Very High Average Power Quantum Cascade Lasers by GasMBE , SPIE International Symposium
on Optoelectronics 2003, Quantum Sensing: Evolution and Revolution from Past to Future , San Jose,
CA -- January 25, 2003.
453. Type II Superlattices for VLWIR , AFOSR Semiconductor Materials Program Review Meeting ,
Anaheim, CA -- January 8, 2003.
454. Back-Side Illuminated Solar Blind AlGaN Based Ultraviolet Photodiodes , AFOSR Semiconductor
Materials Program Review Meeting , Anaheim, CA -- January 8, 2003.
455. International Steering Committee, 4th International Conference on Low Dimensional Structures and
Devices (LDSD�02 , Fortaleza, Brazil -- December 8, 2002.
456. High Performance Quantum Cascade Lasers at l = 6 �m , 4th International Conference on Low
Dimensional Structures and Devices (LDSD�02) , Fortaleza, Brazil -- December 8, 2002.
457. Quantum Sensing Using Type II InAs/GaSb Superlattices for Infrared Detection , 4th International
Conference on Low Dimensional Structures and Devices (LDSD�02) , Fortaleza, Brazil -- December
8, 2002.
458. Quantum Dots Lasers Applications , Session Chair, 4th International Conference on Low
Dimensional Structures and Devices (LDSD�02) , Fortaleza, Brazil -- December 8, 2002.
459. Next Generation of Infrared Multispectral FPAs: Artificial Eyes � Inspiration from
Nature , Department of Physics, Temple University , Philadelphia, PA -- November 18, 2002.
460. Artificial Eyes Based on Semiconductor Quantum Devices: Inspiration from Nature , Department of
Physics, University of Missouri-St. Louis , St. Louis, MO -- November 15, 2002.
461. Quantum Sensing Using Artificial Atoms: Inspiration from Nature , SPIE International Symposium
on Photonics Fabrication Europe , Brugge, Belgium -- October 28, 2002.
462. Artificial Atoms: Next Generation of Infrared Multispectral FPAs , Electrochemical Society
Symposium on Narrow Bandgap Optoelectronic Materials and Devices , Salt Lake City, UT -- October
20, 2002.
463. International Advisory Board, International Conference on Solid State Crystals-Materials Science
and Applications (ICSSC) , Zakopane, Poland -- October 14, 2002.
464. High Power Quantum Cascade Lasers Grown by GasMBE , International Conference on Solid State
Crystals-Materials Science and Applications (ICSSC) , Zakopane, Poland -- October 14, 2002.
465. Recent advances in III-nitride-based UV optoelectronics , International Conference on Solid State
Crystals-Materials Science and Applications (ICSSC) , Zakopane, Poland -- October 14, 2002.
466. AFOSR/MDA Materials for Infrared Detector Applications Review Meeting , Arlington, VA -October 8, 2002.
467. Scientific Committee, MIOMD-V Conference , Annapolis, MD -- September 8, 2002.
468. Recent Advances in Quantum Cascade Lasers Grown by GasMBE , 11th Seoul International
Symposium on the Physics of Semiconductors and Applications (ISPSA) , Cheju Island, Korea -August 20, 2002.
469. Nitride Nanostructure Devices , Session Chair, 11th Seoul International Symposium on the Physics of
Semiconductors and Applications (ISPSA) , Cheju Island, Korea -- August 20, 2002.
470. DARPA/MTO Photonic WASSP PI Review Conference , Alexandria, VA -- August 12, 2002.
471. OEIC for Next Generation WDM Communications , ITCOm 2002 + Opticom2002 SPIE Symposium,
Active and Passive Optical Components for WDM Communication II , Boston, MA -- July 29, 2002.
472. DARPA High Average Power Solid-state Lasers (HAPSL) Diode Pump Workshop , Arlington, VA -June 27, 2002.
473. Further Advances in Quantum Cascade Laser Performance , Solid State and Diode Laser
Technology Review (SSDLTR) , Albuquerque, NM -- June 3, 2002.
474. High Performance Quantum Cascade Laser Results at the Center for Quantum
Devices , EXMATEC 2002 6th International Workshop on Expert Evaluation & Control of
Compound Semiconductor Materials & Technologies , Budapest, Hungary -- May 26, 2002.
475. Defense Advanced Research Projects Agency (DARPA), , �Semiconductor UV Optical Sources
(SUVOS)� Kickoff Meeting , Daytona Beach, FL -- May 21, 2002.
476. Federal Programs to Encourage Innovation in the United States, a Cooperative Symposium by the
National Academy of Technologies in France (NATF) and Board on Science, Technology and
Economic Policy of the U.S. National Academies of Sciences and Engineering , Paris, France -- March
21, 2002.
477. Artificial Atoms: Solution for Infrared Multicolor Focal Plane Arrays , Quantum IR Structures
Session, American Physical Society Meeting , Indianapolis, IN -- March 18, 2002.
478. AlInGaN/AlInGaN UV LED Grown by Low-Pressure MOCVD , 7th Wide Bandgap III-Nitride
Workshop , Richmond, VA -- March 10, 2002.
479. Society of Women Engineers (SWE) Executive Leadership Conference , Washington, DC -- March 8,
2002.
480. Type II InAs/GaSb Superlattice Photovoltaic Detector with 50% Cutoff at 18.8 �m , Workshop on
Compound Semiconductor Materials and Devices (WOCSEMMAD) , Austin, TX -- February 17, 2002.
481. 9 �m High Power, Low Threshold Quantum Cascade Lasers Grown by Gas-Source
MBE , Workshop on Compound Semiconductor Materials and Devices (WOCSEMMAD) , Austin,
TX -- February 17, 2002.
482. UV AlInGaN/AlInGaN LED Grown by LP-MOCVD , Workshop on Compound Semiconductor
Materials and Devices (WOCSEMMAD) , Austin, TX -- February 17, 2002.
483. Quantum Dot Sources and Detectors , Program Committee, SPIE International Symposium on
Optoelectronics 2002 , San Jose, CA -- January 21, 2002.
484. Photodetector Materials and Devices VII , Co-Chair, SPIE International Symposium on
Optoelectronics 2002 , San Jose, CA -- January 21, 2002.
485. Photodetector Materials and Devices II , Session Chair, SPIE International Symposium on
Optoelectronics 2002 , San Jose, CA -- January 21, 2002.
486. High Performance VLWIR Photodetectors based on InAs/GaSb type-II Superlattices , SPIE
International Symposium on Optoelectronics 2002, Photodetector Materials and Devices II , San Jose,
CA -- January 21, 2002.
487. Optoelectronic Integrated Circuit (OEIC�s) Application in WDM , SPIE International Symposium
on Optoelectronics 2002, Optoelectronic Integrated Circuits , San Jose, CA -- January 21, 2002.
488. Future of AlxGa1-xN Materials and Device Technology for Ultraviolet Photodetectors , SPIE
International Symposium on Optoelectronics 2002, Photodetector Materials and Devices VII , San
Jose, CA -- January 21, 2002.
489. Recent Advances and Future Trends in Mid-Infrared Semiconductor Lasers , Contemporary
Photonics Technology (CPT) Symposium , Tokyo, Japan -- January 15, 2002.
490. Session D: Lasers for Network , Session Chair, Contemporary Photonics Technology (CPT)
Symposium , Tokyo, Japan -- January 15, 2002.
491. Steering Committee, Advanced Workshop on Frontiers in Electronics (WOFE-02) , St. Croix, Virgin
Islands -- January 6, 2002.
492. Artificial Atoms and Molecules: Enabling Technology for the New Millenium , Advanced Workshop
on Frontiers in Electronics (WOFE-02) , St. Croix, Virgin Islands -- January 6, 2002.
493. Emerging Technologies , Session Chair, Advanced Workshop on Frontiers in Electronics (WOFE02) , St. Croix, Virgin Islands -- January 6, 2002.
494. International Advisory Committee, International Workshop on the Physics of Semiconductor
Devices (IWPSD) , Delhi, India -- December 11, 2001.
495. Quantization for High Performance Infrared Laser Diodes , International Workshop on the Physics
of Semiconductor Devices (IWPSD) , Delhi, India -- December 11, 2001.
496. Recent Advances and Future Trends of InAs/GaSb Superlattice for Very Long Wavelength Infrared
Focal Plane Arrays (FPAs) , International Semiconductor Device Research Symposium
(ISDRS�01) , Washington, DC -- December 5, 2001.
497. Development of Quantum Cascade Lasers for High Peak Output Power and Low Threshold Current
Density , International Semiconductor Device Research Symposium (ISDRS�01 , Washington, DC -December 5, 2001.
498. Very High Quality p-type AlxGa1-xN/GaN Superlattice , International Semiconductor Device
Research Symposium (ISDRS�01 , Washington, DC -- December 5, 2001.
499. Quantum Dots of InAs/GaSb Type II Superlattice for Infrared Sensing , Materials Research Society
(MRS) Fall Meeting, Symposium on Progress on Semiconductor Materials for Optoelectronic
Applications , Boston, MA -- November 26, 2001.
500. Low Resistivity AlxGa1-xN/GaN Superlattices for UV Emitters: Development of AlGaN Based UV
LED and Lasers (l ~ 280 nm) , III-Nitride UV Emitter Coordination Meeting, DARPA Workshop ,
University of Texas at Austin, TX -- November 7, 2001.
501. Overview of CQD Research Activity on Nanotechnology: Toward Atomic Scale , Distinguished
Lecture Series, Materials and Nuclear Engineering Department , University of Maryland, MD -November 2, 2001.
502. Tuning of QWIPs: New Possibilities , Workshop on Reconfigurable Focal Plane Arrays, Defense
Advanced Research Projects Agency , Arlington, VA -- October 22, 2001.
503. Invited Talk, Workshop on Antimonide Strained Layer Superlattices, Ballistic Missile Defense
Organization (BMDO)/Science and Technology Division , Arlington, VA -- October 19, 2001.
504. Invited Talk, Workshop on Quantum Cascade Laser Technology, U.S. Army Research Office ,
Arlington, VA -- October 9, 2001.
505. Editorial Board Meeting, Nanotechnology Journal, Institute of Physics Publishing , London, England - October 5, 2001.
506. Program Committee and Program Chair, 28th International Symposium on Compound
Semiconductors (ISCS 2001) , University of Tokyo, Japan -- October 1, 2001.
507. Invited Talk, Optical Sciences Center, University of Arizona , Tucson, AZ -- September 9, 2001.
508. InAs-GaSb Type II Superlattice for VLWIR Detectors , Quantum Electronics Conference , Glasgow,
Scotland -- September 3, 2001.
509. Invited Talk, DARPA Photonic WASSP Review Meeting , Los Angeles, CA -- July 31, 2001.
510. Gated Nano-pillars for Uncooled Tunable Infrared Detectors , 3rd Workshop on the Fabrication,
Characterization and Application of III-V Semiconductors , Snowbird, UT -- July 31, 2001.
511. Materials for Infrared Detectors , Program Committee, SPIE International Symposium on Optical
Science and Technology , San Diego, CA -- July 29, 2001.
512. Type II Superlattices (InAs/GaSb/AlAs): Alternative for MCT for Infrared FPA , SPIE International
Symposium on Optical Science and Technology, Materials for Infrared Detectors , San Diego, CA -July 29, 2001.
513. Invited Talk, InterOpto 2001 , Tokyo, Japan -- July 16, 2001.
514. Materials for Opto-Electronics and High Frequency Electronics Applications , Symposium Co-Chair,
International Conference on Materials for Advanced Technologies (ICMAT) , Singapore -- July 1,
2001.
515. Gated Nano-pillars for Uncooled Tunable Infrared Detectors , Future Trends in Microelectronics
(FTM): The Nano Millennium , Ile de Bendor, France -- June 25, 2001.
516. Type II Superlattices for VLWIR , Air Force Office of Scientific Research, Semiconductor Detector
Program Review , Williamsburg, VA -- June 4, 2001.
517. AlxGa1-xN for Solar Blind Focal Plane Arrays , DARPA MTO IR/UV Imaging Technologies Review
Meeting , Panama City, FL -- May 22, 2001.
518. Recent Advances in Mid-Infrared Semiconductor Laser Diodes , Solid State Diode Laser Review
(SSDLTR) Conference , Albuquerque, NM -- May 21, 2001.
519. Quantization for High Performance Infrared Laser Diodes , 1st Annual U.S.-Korea-Japan Workshop
on Nanostructure Science/Technology (WNST) , Hanyang University, Seoul, Korea -- April 23, 2001.
520. Enabling Technologies for the 21st Century, Overview of CQD Research Activity , Review of Center
for Optoelectronic Devices, Interconnects and Packaging (COEDIP) , University of Arizona, Tucson -April 11, 2001.
521. Quantum Dots of GaN Based Materials for 280 nm Lasers , III-Nitride UV Emitters Study Group
Conference, Defense Advanced Research Projects Agency , Arlington, VA -- April 9, 2001.
522. CQD Vision of the III-V Semiconductor Sb-based Mesoscopic Optoelectronic Devices , Mid-Infrared
Optoelectronics Materials and Devices (MIOMD) 4th International Conference , Montpellier, France - April 1, 2001.
523. Workshop on Developments in Optoelectronics: Opportunities for Solid State Lighting, National
Research Council Board on Science, Technology and Economic Policy, National Academy of
Sciences , Washington, DC -- March 26, 2001.
524. Infrared Quantum Well Laser Diodes: State of the Art and Future Trends , Advanced Research
Workshop on Semiconductor Nanostructures , Queenstown, New Zealand -- February 5, 2001.
525. Low-dimensional Transport , Session Co-Chair, Advanced Research Workshop on Semiconductor
Nanostructures , Queenstown, New Zealand -- February 5, 2001.
526. NSF Review Panel Member, Nanoscale Interdisciplinary Research Teams (NIRT) for Nanoscale
Science Engineering (NSE) Initiative, National Science Foundation , Arlington, VA -- January 22,
2001.
527. Photodetectors Materials and Devices VI Conference , Conference Chair, SPIE International
Symposium on Optoelectronics 2001 , San Jose, CA -- January 22, 2001.
528. Competition of Infrared Detector Technologies II , Session Chair, SPIE International Symposium on
Optoelectronics 2001 , San Jose, CA -- January 22, 2001.
529. High Performance Quantum Cascade Lasers Grown by Gas-Source Molecular Beam Epitaxy , SPIE
International Symposium on Optoelectronics 2001, In-Plane Semiconductor Lasers V , San Jose, CA - January 22, 2001.
530. Novel Sb-based Alloy for Uncooled Infrared Photodetector Applications , SPIE International
Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI , San Jose, CA -January 22, 2001.
531. AlxGa1-xN Materials and Device Technology for Solar Blind Ultraviolet Photodetector
Applications , SPIE International Symposium on Optoelectronics 2001, Photodetectors Materials and
Devices VI , San Jose, CA -- January 22, 2001.
532. High Performance Type-II InAs/GaSb Superlattice Photodiodes , SPIE International Symposium on
Optoelectronics 2001, Photodetectors Materials and Devices VI , San Jose, CA -- January 22, 2001.
533. Monolithic Integration of GaInAs/InP Quantum Well Infrared Photodetectors on Si Substrate , SPIE
International Symposium on Optoelectronics 2001, Photodetectors Materials and Devices VI , San
Jose, CA -- January 22, 2001.
534. Quantum Dot Infrared Photodetectors Compared with QWIPs , SPIE International Symposium on
Optoelectronics 2001, Photodetectors Materials and Devices VI , San Jose, CA -- January 22, 2001.
535. Enabling Technology for the New Millenium: Toward Atomic Scale , Colloquium Seminar,
Department of Physics, University of Illinois at Chicago , Chicago, IL -- January 17, 2001.
536. AlxGa1-xN for Solar Blind UV Detectors , International Specialist Meeting on Bulk Nitride Growth
and Related Techniques , Parana, Brazil -- November 12, 2000.
537. Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based
Superlattices , 10th International Symposium on the Physics of Semiconductors and Applications
(ISPSA-2000) , Cheju Island, Korea -- November 1, 2000.
538. Chair Session, 10th International Symposium on the Physics of Semiconductors and Applications
(ISPSA-2000) , Cheju Island, Korea -- November 1, 2000.
539. Uncooled Integrated Sensors , DARPA Optoelectronics Review Meeting , Cincinnati, OH -- October
17, 2000.
540. High Performance Type-II Superlattices for Uncooled and Very Long Wavelength Infrared
Detection , DARPA Optoelectronics Review Meeting , Cincinnati, OH -- October 17, 2000.
541. Advanced Lasers and Detector Integrated Systems , DARPA Optoelectronics Review Meeting ,
Cincinnati, OH -- October 17, 2000.
542. International Advisory Board, International Conference on Solid State Crystals - Materials Science
and Application , Zakopane, Poland -- October 9, 2000.
543. Session Chair, International Conference on Solid State Crystals - Materials Science and Application ,
Zakopane, Poland -- October 9, 2000.
544. Miniaturization: Enabling Technology for the New Millenium , Keynote Address, International
Conference on Solid State Crystals - Materials Science and Application , Zakopane, Poland -- October
9, 2000.
545. Quantum Sensing , Office of Naval Research , Washington, DC -- September 15, 2000.
546. Past, Present and Future of Infrared Photodetectors , Air Force Office of Scientific Research ,
Arlington, VA -- September 14, 2000.
547. Advanced Lasers and Detector Integrated Systems (ALADINS) , DARPA Photonic Wavelength and
Spatial Signal Processing (PWASSP) Review Meeting , Williamsburg, VA -- September 12, 2000.
548. Quantum Well Infrared Photodetectors (3-20 �m) FPA: Monolithic Integration with Si-based ROIC
for Low Cost and High Performance , SPIE International Symposium on Optical Science and
Technology: Infrared Technology and Applications XXVI , San Diego, CA -- July 30, 2000.
549. Development of Quantum Well Infrared Photodetectors at the Center for Quantum Devices , QWIP
Workshop , Dana Point, CA -- July 27, 2000.
550. Recent Advances and Future Trends of High Power IR Laser Diodes , Tenth International
Conference on Laser Optics , St. Petersburg, Russia -- June 26, 2000.
551. Material Development and Applications for UV Detectors , Nagoya Institute of Technology , Nagoya,
Japan -- June 12, 2000.
552. Low Threshold, High Power Quantum Cascade Lasers Emitting at 9 �m Grown by GasMBE , Solid State and Diode Laser Technology Review (SSDLTR) , Albuquerque, NM -- June 5, 2000.
553. Program Committee, Tenth International Conference on Metalorganic Vapor Phase Epitaxy
(ICMOVPE-X) , Sapporo, Japan -- June 5, 2000.
554. Session Chair, Tenth International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPEX) , Sapporo, Japan -- June 5, 2000.
555. Novel Sb-based Materials for Uncooled Infrared Photodetector Applications , Tenth International
Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X) , Sapporo, Japan -- June 5, 2000.
556. UV Photodetectors , 6th Annual Widegap III-Nitride Workshop 2000 , Richmond, VA -- March 12,
2000.
557. DARPA Solar Blind Detector (SBD) Review Meeting , Westlake Village, CA -- February 29, 2000.
558. Current Progress on Infrared (IR) and Ultraviolet (UV) Photodetectors , Rockwell Science Center ,
Thousand Oaks, CA -- February 28, 2000.
559. Photodetectors Materials and Devices V Conference , Conference Chair, SPIE International
Symposium on Optoelectronics 2000 , San Jose, CA -- January 26, 2000.
560. Infrared Detectors and Materials I , Session Chair, SPIE International Symposium on
Optoelectronics 2000 , San Jose, CA -- January 26, 2000.
561. LEO of III-Nitride on Al2O3and Si Substrates , SPIE International Symposium on Optoelectronics
2000, Photodetectors Materials and Devices V , San Jose, CA -- January 26, 2000.
562. Ultraviolet Detector Materials and Devices Studied by Femtosecond Nonlinear Optical
Techniques , SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and
Devices V , San Jose, CA -- January 26, 2000.
563. Growth and Characterization of Very Long-Wavelength Type-II Infrared Detectors , SPIE
International Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V , San
Jose, CA -- January 26, 2000.
564. Growth and Characterization of Type-II Non-Equilibrium Photovoltac Detectors for LongWavelength Infrared Range , SPIE International Symposium on Optoelectronics 2000,
Photodetectors Materials and Devices V , San Jose, CA -- January 26, 2000.
565. High-Responsivity GaInAs/InP Quantum Well Infrared Photodetectors Grown by Low-Pressure
Metalorganic Chemical Vapor Deposition , SPIE International Symposium on Optoelectronics 2000,
Photodetectors Materials and Devices V , San Jose, CA -- January 26, 2000.
566. Growth and Optimization of GaInAs/InP Material System for Quantum Well Infrared Photodetector
Applications , SPIE International Symposium on Optoelectronics 2000, Photodetectors Materials and
Devices V , San Jose, CA -- January 26, 2000.
567. Very High-Efficiency AlxGa1-xN p-i-n Solar Blind Ultraviolet Photodetectors , SPIE International
Symposium on Optoelectronics 2000, Photodetectors Materials and Devices V, San Jose, CA -January 26, 2000.
568. U.S. Army Research Laboratory , Adelphi, MD -- January 12, 2000.
569. International Advisory Committee, 10th International Workshop on Physics of Semiconductor
Devices (IWPSD �99) , New Delhi, India -- December 14, 1999.
570. Future Trends of III-Nitrides Using Lateral Epitaxial Overgrowth , 10th International Workshop on
Physics of Semiconductor Devices (IWPSD �99) , New Delhi, India -- December 14, 1999.
571. Inaugural/Keynote Address, 10th International Workshop on Physics of Semiconductor Devices
(IWPSD �99) , New Delhi, India -- December 14, 1999.
572. New Approaches in Uncooled Infrared Photodetectors: Sb-Based III-V Compound
Semiconductors , 10th International Workshop on Physics of Semiconductor Devices (IWPSD �99) ,
New Delhi, India -- December 14, 1999.
573. Defense Advanced Research Projects Agency, Advanced Technology Office, Home Day , Arlington,
VA -- December 6, 1999.
574. U.S. Air Force Office of Scientific Research Review Meeting , Wright-Patterson AFB, OH -- December
2, 1999.
575. Chair Session, Photonics and Optoelectronics Sessions, International Semiconductor Device
Research Symposium (ISDRS �99) , Charlottesville, VA -- December 1, 1999.
576. Enabling Technologies for the New Millenium , Panel Discussion Member, International
Semiconductor Device Research Symposium (ISDRS �99) , Charlottesville, VA -- December 1, 1999.
577. Advanced Electronic and Optoelectronic Devices from Engineered type-II Sb-based
Superlattices , International Semiconductor Device Research Symposium (ISDRS �99) ,
Charlottesville, VA -- December 1, 1999.
578. High Quality, Low Noise III-N Photodiodes , International Semiconductor Device Research
Symposium (ISDRS �99) , Charlottesville, VA -- December 1, 1999.
579. First Demonstration of High-Speed Uncooled Type-II Superlattices for Long Wavelength Infrared
Detection , International Semiconductor Device Research Symposium (ISDRS �99) , Charlottesville,
VA -- December 1, 1999.
580. Lateral Epitaxial Overgrowth of GaN: Materials and Devices , International Semiconductor Device
Research Symposium (ISDRS �99) , Charlottesville, VA -- December 1, 1999.
581. DARPA University Optoelectronics Centers Program Workshop , San Francisco, CA -- November 11,
1999.
582. High Power 3-12 �m Laser Diodes: Recent Advances and Future Trends , LEOS Annual Meeting ,
San Francisco, CA -- November 8, 1999.
583. Roadmap of Semiconductor Laser Diodes for WDM: Recent Advances and Future Trends , WDMSA �99 - Wavelength Division Multiplexing - Systems and Applications, National Institute of
Standards and Technology (NIST) , Gaithersburg, MD -- November 3, 1999.
584. GaInAsP-GaAs VLW QWIPs , Air Force Office of Scientific Research Program Review Meeting ,
Dayton, OH -- September 28, 1999.
585. Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector
applications , Low Dimensional Structures and Devices (LDSD�99) , Alanya, Turkey -- September 15,
1999.
586. High power mid-infrared III-V semiconductor injection laser diodes , Low Dimensional Structures
and Devices (LDSD�99) , Alanya, Turkey -- September 15, 1999.
587. International Advisory Committee, Low Dimensional Structures and Devices (LDSD�99) , Alanya,
Turkey -- September 15, 1999.
588. Seminar Presentation , Office of Naval Research , Washington, DC -- August 18, 1999.
589. MOCVD Growth and Characterization of GaN on Si Substrates , Gallium Nitride Electronic Device
Workshop, Cornell University , Ithaca, NY -- August 16, 1999.
590. LEO of III-Nitride on Al2 O3 and Si substrates , Lateral Epitaxial Overgrowth (From Theory to
Design) Workshop , Juneau, Alaska -- August 2, 1999.
591. Solard Blind Detectors Arrays , DARPA/MTO Optoelectronics Review Meeting , San Diego, CA -August 2, 1999.
592. DARPA Solar Blind Detectors Program Kickoff Meeting , Alexandria, VA -- June 16, 1999.
593. U.S. Army Research Laboratory , Adelphi, MD -- June 15, 1999.
594. Organzing Committee, Workshop on Frontier in Electronics (WOFE-99) , Grenoble, France -- May
30, 1999.
595. High Power 3-12 �m Semiconductor Lasers: Roadmap for the 21st Century , Workshop on Frontier
in Electronics (WOFE-99) , Grenoble, France -- May 30, 1999.
596. High power InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3-4 �m , Conference
on Lasers and Electro-Optics (CLEO) , Baltimore, MD -- May 23, 1999.
597. InAsSb/InAsP strained-layer superlattice injection lasers operating at 4.0 �m grown by low
pressure metal-organic chemical vapor deposition , Conference on Lasers and Electro-Optics
(CLEO) , Baltimore, MD -- May 23, 1999.
598. Application of a GaN photodiode for autocorrelation measurements of visible femtosecond
pulses , Conference on Lasers and Electro-Optics (CLEO) , Baltimore, MD -- May 23, 1999.
599. High Power Infrared Injection Laser Diodes (3-10 �m) , Diode Laser Technology Review (DLTR) ,
Ft. Walton Beach, FL -- May 11, 1999.
600. Highlights of High Power Infrared Injection Laser Diodes (3-10 �m) , Naval Research Laboratory ,
Washington, DC -- May 5, 1999.
601. High Power 3-5 �m InAsSb-based Lasers , DARPA Workshop - Photonic Wavelength and Spatial
Signal Processing (WASSP) , Arlington, VA -- May 3, 1999.
602. American Physical Society Centennial Meeting , Atlanta, GA -- March 20, 1999.
603. Large Area Lateral Epitaxial Overgrowth of GaN on Si (LALEOSI) , Naval Research Laboratory ,
Washington, DC -- March 16, 1999.
604. Demonstration of Uncooled InAsSb Photodetectors for Military Sensors , DARPA Workshop on
Uncooled Thermal Imaging Sensors and Infrared Three-Dimensional Imaging , Alexandria, VA -March 16, 1999.
605. Recent Advances and Future Trends for Compound Semiconductor Optoelectronic
Devices , Compound Semiconductor Outlook �99 Conference , San Diego, CA -- March 1, 1999.
606. LEO of GaN on sapphire and Si substrates , Workshop on Compound Semiconductor Materials and
Devices (WOCSEMMAD �99) , New Orleans, LA -- February 22, 1999.
607. UV, MSM and p-i-n detectors, UV blue laser diodes , Workshop on Compound Semiconductor
Materials and Devices (WOCSEMMAD �99) , New Orleans, LA -- February 22, 1999.
608. Photodetectors: Materials and Devices IV , Conference Co-Chair, SPIE Photonics West '99 , San
Jose, CA -- January 24, 1999.
609. Photodetectors: Materials and Devices IV , Session Chair, SPIE Photonics West '99 , San Jose, CA -January 24, 1999.
610. Roadmap of Semiconductor Infrared Lasers and Detectors for the 21st Century , SPIE Photonics
West '99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
611. Electrical Characterization of AlxGa1-xN for UV Photodetector Applications , SPIE Photonics West
'99, Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
612. Multi-color 4-20 �m InP-based Quantum Well Infrared Detectors , SPIE Photonics West '99,
Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
613. Room Temperature InAsSb for Long Wavelength Photovoltaic Detectors , SPIE Photonics West '99,
Photodetectors: Materials and Devices IV , San Jose, CA -- January 24, 1999.
614. Growth and Characetrization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared
Photoconductive Detector by LP-MOCVD , SPIE Photonics West '99, Photodetectors: Materials and
Devices IV , San Jose, CA -- January 24, 1999.
615. Demonstration of InAsSb/AllnSb Double Heterostructure Detectors for Room Temperature
Operation in the 5-8 �m Wavelength Range , SPIE Photonics West '99, Photodetectors: Materials
and Devices IV , San Jose, CA -- January 24, 1999.
616. Internal Street Around Micropipes in 6H-SiC Substrates , SPIE Photonics West '99, Photodetectors:
Materials and Devices IV , San Jose, CA -- January 24, 1999.
617. Growth of InAsSb Alloys on GaAs and Si Substrates for Uncooled Infrared Photodetector
Applications , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -January 24, 1999.
618. AlxGa1-xN p-i-n Photodiodes on Sapphire Substrates , SPIE Photonics West '99, Photodetectors:
Materials and Devices IV , San Jose, CA -- January 24, 1999.
619. Schottky MSM Photodetectors on GaN Films Grown on Sapphire by Lateral Epitaxial
Overgrowth , SPIE Photonics West '99, Photodetectors: Materials and Devices IV , San Jose, CA -January 24, 1999.
620. Characteristics of Self-Assembled InGaAs/InGaP Quantum Dot Mid-Infrared Photoconductive
Detectors Grown by Low Pressure MOCVD , SPIE Photonics West '99, Photodetectors: Materials
and Devices IV , San Jose, CA -- January 24, 1999.
621. Recent Advances in Semiconductor Infrared Lasers , Chemistry Department, Texas A&M
University , College Station, TX -- December 10, 1998.
622. Development of high-performance III-Nitride-based semiconductor devices , 9th International
Symposium on the Physics of Semiconductors and Applications (ISPSA-98) , Seoul, Korea -November 6, 1998.
623. Growth and Characterization of InAsGaSb Type II Superlattices for 8-12 �m Room Temperature
Detectors , 6th International Symposium on Long Wavelength Infrared Detectors and Arrays:
Physics and Applications, Electrochemical Society , Boston, MA -- November 5, 1998.
624. Growth and Characterization of Self-Assembled InGaAs/InGaP Quantum Dots for Mid-Infrared
Photoconductive Detector by LP-MOCVD , 6th International Symposium on Long Wavelength
Infrared Detectors and Arrays: Physics and Applications, Electrochemical Society , Boston, MA -November 5, 1998.
625. Recent Advance of III-Nitrides for Photonic and Optoelectronic Devices , International Conference
on Solid State Crystals - Materials Science and Applications , Zakopane, Poland -- October 12, 1998.
626. Uncooled Long-Wavelength Infrared Photodetectors Using Narrow Band Gap
Semiconductors , International Symposium on Compound Semiconductors (ISCS) , Nara, Japan -October 12, 1998.
627. Intersubband Transition and Relaxation , Session Chair, International Symposium on Compound
Semiconductors (ISCS) , Nara, Japan -- October 12, 1998.
628. Mid-Infrared Type II Bipolar LEDs and Lasers for Chemcial Sensing , OSA Annual
Meeting/Interdisciplinary Laser Science Conference XIV , Baltimore, MD -- October 4, 1998.
629. Quantum Well Infrared Photodetectors (QWIPs) for IR Imaging , Physics at the Turn of the 21st
Century Conference , St. Petersburg, Russia -- September 28, 1998.
630. Recent Advance fo Mid-Infrared Semiconductor Lasers , Semiconductor Science and Technology
�98 , La Jolla, CA -- September 7, 1998.
631. Growth of InGaAs/InGaP Quantum Dots Light Emitting Sources by Low-Pressure MOCVD , 4th
International Conference on Electronic Materials (ICEM-98) , Cheju Island, Korea -- August 24, 1998.
632. Growth and Characterization of InGaAs/InGaP Quantum Dots for Mid-Infrared
Photodetectors , 4th International Conference on Electronic Materials (ICEM-98) , Cheju Island,
Korea -- August 24, 1998.
633. Theoretical and Experimental Analysis of High Power Al-free InGaAsP/GaAs (l = 0.808 �m) Laser
Diodes , 4th International Conference on Electronic Materials (ICEM-98) , Cheju Island, Korea -August 24, 1998.
634. Lateral Epitaxial Overgrowth of GaN Thin Films on Sapphire and Silicon , Wide Bandgap Nitride
Semiconductor Workshop , St. Louis, MO -- August 4, 1998.
635. Exploration of the Entire Spectrum of III-V Semiconductors for Opto-electronics , 23rd
International Summer College on Physics and Contemporary Needs , Bhurban, Pakistan -- June 26,
1998.
636. 21st Century: The Final Frontier for III-Nitride Materials and Devices , Future Trends in
Microelectronics , Ile des Embiez, France -- May 31, 1998.
637. InAsSb(P)-based Interband Mi-Infrared (3-5 �m) Laser: Problems and Future Directions , CLEO
Conference, �Semiconductor Laser Workshop" , San Francisco, CA -- May 8, 1998.
638. Low Threshold Aluminum Free GaInN/GaN Multi-Quantum Well Blue Lasers: Material growth,
Characterization, Device Fabrication and Testing , Cornell University , Ithaca, NY -- March 10, 1998.
639. Quantum Cascade Lasers Grown by Gas-Source Molecular beam Epitaxy , Diode Laser Technology
Review (DLTR) , Albuquerque, NM -- March 2, 1998.
640. High Power InAsSb/InPAsSb/InAs Mid-Infrared Lasers , Diode Laser Technology Review (DLTR) ,
Albuquerque, NM -- March 2, 1998.
641. Growth, Characterization and Device Fabrication of Mid-Infrared Type II Bipolar Lasers , Diode
Laser Technology Review (DLTR) , Albuquerque, NM -- March 2, 1998.
642. Photodetectors: Materials and Devices III , Conference Co-Chair, SPIE Photonics West '98 , San
Jose, CA -- January 24, 1998.
643. Integrated Optic Devices II , Program Committee, SPIE Photonics West '98 , San Jose, CA -- January
24, 1998.
644. Narrow gap semiconductor photodiodes , SPIE Photonics West '98, Photodetectors: Materials and
Devices III , San Jose, CA -- January 24, 1998.
645. Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared
detectors , SPIE Photonics West '98, Photodetectors: Materials and Devices III , San Jose, CA -January 24, 1998.
646. Electrical transport properties of highly doped N-type GaN epilayers , SPIE Photonics West '98,
Photodetectors: Materials and Devices III , San Jose, CA -- January 24, 1998.
647. Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors grown by
gas-source molecular beam epitaxy , SPIE Photonics West '98, Photodetectors: Materials and
Devices III , San Jose, CA -- January 24, 1998.
648. Multiple quantum well structures for multicolor infrared detectors , SPIE Photonics West '98,
Photodetectors: Materials and Devices III , San Jose, CA -- January 24, 1998.
649. GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio , SPIE Photonics West '98,
Photodetectors: Materials and Devices III , San Jose, CA -- January 24, 1998.
650. Investigation of novel InTlSb and InSbBi alloys for uncooled photodetector applications , SPIE
Photonics West '98, Photodetectors: Materials and Devices III , San Jose, CA -- January 24, 1998.
651. 8.5 �m room-temperature quantum cascade lasers grown by gas-source molecular beam
epitaxy , SPIE Photonics West '98, Integrated Optic Devices II , San Jose, CA -- January 24, 1998.
652. Continuous-wave room temperature operation of InGaN/GaN multi-quantum well lasers grown by
low-pressure metalorganic chemical vapor deposition , SPIE Photonics West '98, In-Plane
Semiconductor Laser , San Jose, CA -- January 24, 1998.
653. Infrared Photodetectors and Imaging Arrays Using Advanced III-V Materials , 9th International
Workshop on Physics of Semiconductor Devices (IWPSD) , New Delhi, India -- December 16, 1997.
654. New Developments in III-Nitride Material and Device Applications , 9th International Workshop on
Physics of Semiconductor Devices (IWPSD) , New Delhi, India -- December 16, 1997.
655. InP-based Multi-Spectral Quantum Well Infrared Photodetectors , International Semiconductor
Device Research Symposium (ISDRS �97) , Charlottesville, VA -- December 11, 1997.
656. Mid-Infrared Quantum Cascade Lasers Grown by Gas-Source Molecular Beam
Epitaxy , International Semiconductor Device Research Symposium (ISDRS �97) , Charlottesville,
VA -- December 11, 1997.
657. Trends in Optoelectronics , Conference on Gallium Arsenide & Other Compound Semiconductors ,
San Diego, CA -- November 12, 1997.
658. Reliable High-Power Uncoated Al-free InGaAsP/GaAs Lasers for Cost-Sensitive Optical
Communication and Processing Applications , SPIE Conference, Design and Manufacturing of
WDM Devices , Dallas, TX -- November 4, 1997.
659. Sb-based Infrared Materials for Uncooled Photodetector Applications , 192nd Meeting of the
Electrochemical Society, Fifth International Symposium on Long Wavelength Infrared Detectors and
Arrays-Physcs and Applications , Paris, France -- August 31, 1997.
660. III-Nitrides Grown Using Trimethygallium and Triethylgallium , 19th International Conference on
Defects in Semiconductors (ICDS) , Aveiro, Portugal -- June 21, 1997.
661. High Power Midwave-Infrared InAsSb/InPAsSb Lasers for 3-5 �m , Diode Laser Technology
Review Meeting , Albuquerque, NM -- June 9, 1997.
662. Microscopes: Tools for Probing Atomic Arrangements in Semiconductor Thin Films , Scanning
Microscopy Meeting, Formation and Properties of Nanoscaled Structures Symposium , Chicago, IL -May 12, 1997.
663. Exploration of entire range III-V semiconductor materials and devices , Department of Electrical
Engineering , University of Notre Dame, IN -- April 22, 1997.
664. Quantum Well Infrared Photodetectors (QWIPs) , Electrical Engineering and Computer Science
Department , University of Illinois at Chicago, IL -- April 3, 1997.
665. Heteroepitaxial AlGaN films for ultraviolet photodetector applications , III-Nitride Workshop , St.
Louis, MO -- March 11, 1997.
666. Photodetectors: Materials and Devices II , Conference Co-Chair, SPIE Photonics West '97 , San Jose,
CA -- February 8, 1997.
667. Integrated Optic Devices: Potential and Commercialization , Program Committee, SPIE Photonics
West '97 , San Jose, CA -- February 8, 1997.
668. Materials for Lasers and New Lasers Session , Session Chair, SPIE Photonics West '97, Integrated
Optics Devices: Potential and Commercialization Conference , San Jose, CA -- February 8, 1997.
669. MBE of InSb for focal plane arrays , SPIE Photonics West '97, Photodetectors: Materials and
Devices II , San Jose, CA -- February 8, 1997.
670. Growth models of GaN thin films based on crystal chemistry , SPIE Photonics West '97,
Photodetectors: Materials and Devices II , San Jose, CA -- February 8, 1997.
671. InAsSb/InAsSbP high-power laser diodes emitting 3-5 �m range on InAs and GaSb
substrates , SPIE Photonics West '97, Integrated Optics Devices: Potential and Commercialization
Conference , San Jose, CA -- February 8, 1997.
672. Temperature insensitivity of the Al-free InGaAs(P)/GaAs lasers for l = 808 and 980 nm , SPIE
Photonics West '97, In-Plane Semiconductor Lasers , San Jose, CA -- February 8, 1997.
673. InSb growth on (111) and (100) GaAs and Si substrates for near room temperature focal plane
arrays , SPIE Photonics West '97, Photodetectors: Materials and Devices II , San Jose, CA -- February
8, 1997.
674. InTlSb and InAsSb for 8-12 �m near room temperature operation , SPIE Photonics West '97,
Photodetectors: Materials and Devices II , San Jose, CA -- February 8, 1997.
675. Very long wavelength GaAs/GaInP quantum Weiol infrared photodetectors , SPIE Photonics West
'97, Photodetectors: Materials and Devices II , San Jose, CA -- February 8, 1997.
676. AlGaN ultraviolet detectors , SPIE Photonics West '97, Photodetectors: Materials and Devices II ,
San Jose, CA -- February 8, 1997.
677. Intrinsic AlGaN photoconductors for the entire compositional range , SPIE Photonics West '97,
Photodetectors: Materials and Devices II , San Jose, CA -- February 8, 1997.
678. Infrared Imaging Arrays Using Advanced III-V Materials , Advanced Workshop on Frontiers in
Electronics (WOFE) , Canary Islands, Spain -- January 6, 1997.
679. High Power InAsSb/InAsSbP Laser Diodes Emitting at 3-5 �m Range , Materials Research Society
Fall Meeting , Boston, MA -- December 2, 1996.
680. GaInAsP/GaAs Quantum Well Intrasubband Photodetectors (QWIPs) for 8-12 �m Focal Plane
Array Infrared Imaging , Materials Research Society Fall Meeting , Boston, MA -- December 2, 1996.
681. Very Low Dislocation Densities in GaN-AlGaN Heterostructures, , Materials Research Society Fall
Meeting , Boston, MA -- December 2, 1996.
682. High Resolution X-Ray Diffraction of GaN Grown on Sapphire Substrates , Materials Research
Society Fall Meeting , Boston, MA -- December 2, 1996.
683. Growth of InSb on GaAs and Si for Infrared Imaging Focal Plane Arrays , Materials Research
Society Fall Meeting , Boston, MA -- December 2, 1996.
684. Recent Advances in III-Nitride Materials, Characterization and Device Applications , 8th Seoul
International Symposium on the Physics of Semiconductors and Applications (ISPSA-96) , Seoul,
Korea -- October 21, 1996.
685. Sb-based Infrared FPA on GaAs and Si , DARPA/ETO Optoelectronics Program Review , Orlando,
FL -- October 7, 1996.
686. Recent Advances in III-Nitride Materials, Characterization and Device Applications , XII
Conference on Solid State Crystals, Materials Science and Applications , Zakopane, Poland -- October
7, 1996.
687. III-V Interband and Intraband Far-Infrared Detectors , 23rd International Symposium on
Compound Semiconductors , St. Petersburg, Russia -- September 23, 1996.
688. GaAs-GaInP(As) p-type and n-type QWIPs , Air Force Office of Scientific Research Semiconductor
and Electromagnetic Materials Review , Wright-Patterson AFB, OH -- August 22, 1996.
689. Epitaxial Growth of III-V Nitride Wide Bandgap Semiconductors , Air Force Wright Laboratory ,
Wright-Patterson AFB, OH -- June 17, 1996.
690. Sb-based Infrared Photodetectors and Focal Plane Arrays for Operation in the 3-14 �m
Range , CLEO/QELS '96 , Anaheim, CA -- June 2, 1996.
691. MOCVD Growth of High Quality GaN-AlGaN Based Structures on Al2O3 Substrates with
Dislocation Density Less than 10^7 cm^-2 , International Symposium on Nitrides , St. Malo, France -May 29, 1996.
692. DARPA Uncooled Integrated Imaging Sensors Workshop , Alexandria, VA -- May 14, 1996.
693. Development of III-Nitride Technology for Optoelectronic Devices , DARPA/ETO GaN Workshop ,
Reston, VA -- May 9, 1996.
694. MOCVD Growth of InAsSb(P)-InAs Based Alloys for Long Wavelength Lasers , IEEE 9th
International Conference on Semiconducting and Insulating Materials , Toulouse, France -- April 29,
1996.
695. Diode Laser Technology Review, Air Force Phillips Laboratory , Albuquerque, NM -- April 14, 1996.
696. Wide Bandgap III-Nitride Semiconductors and Their Applications , Electrical Engineering
Department, University of Minnesota , Minneapolis, MN -- March 28, 1996.
697. The Advantages of Aluminum-free InGaAsP/GaAs Lasers for Applications in WDM Systems , SPIE
Photonics West '96, "WDM Components" , San Jose, CA -- January 27, 1996.
698. Semiconductor Ultraviolet Detectors , SPIE Photonics West '96, "WDM Components" , San Jose, CA
-- January 27, 1996.
699. Sb-based Infrared Materials and Photodetectors for the 3-5 and 8-12 �m Range , SPIE Photonics
West '96 , San Jose, CA -- January 27, 1996.
700. UV Photodetectors Based on AlGaN Grown by MOCVD , SPIE Photonics West '96 , San Jose, CA -January 27, 1996.
701. GaN, GaAlN, and AlN for Use in UV Detectors for Astrophysics: An Update , SPIE Photonics West
'96 , San Jose, CA -- January 27, 1996.
702. Optical Absorption and Photoresponse in Fully Quaternary p-type Quantum Well Detectors , SPIE
Photonics West '96 , San Jose, CA -- January 27, 1996.
703. Photoconductivity in N-type GaN , Materials Research Society Fall Meeting , Boston, MA -November 27, 1995.
704. Spectral Response of GaN p-n-Junction Photovoltaic Structure , Materials Research Society Fall
Meeting , Boston, MA -- November 27, 1995.
705. Characterization of InGaP Regrown on Patterned Wafers by MBE , Materials Research Society Fall
Meeting , Boston, MA -- November 27, 1995.
706. Growth of GaN Without Yellow Luminescence , Materials Research Society Fall Meeting , Boston,
MA -- November 27, 1995.
707. MOCVD Growth of Quantum Devices , Heterostructure Epitaxy and Devices (HEAD '95) ,
Smolenice, Slovakia -- October 15, 1995.
708. Symposium Organizer, 3rd International Symposium on Quantum Confinement: Quantum Wires
and Dots, 188th Meeting of the Electrochemical Society , Chicago, IL -- October 8, 1995.
709. Background Limited Performance in p-doped GaAs/GaInAsP QWIPs , 188th Meeting of the
Electrochemical Society , Chicago, IL -- October 8, 1995.
710. Characterization of a Normal Incidence p-doped GaAs/GaInP QWIP , 188th Meeting of the
Electrochemical Society , Chicago, IL -- October 8, 1995.
711. Long Wavelength InAsSb-based Heterostructure Infrared Photodetectors , 188th Meeting of the
Electrochemical Society , Chicago, IL -- October 8, 1995.
712. High Power Semiconductor Diode Lasers , Center for Nonlinear Optical Materials (CNOM) Annual
Affiliates Meeting , Stanford University -- September 19, 1995.
713. High Power Diode Lasers , Symposium Organizer, 1995 Annual Meeting of the Optical Society of
America , Portland, OR -- September 10, 1995.
714. Sb-based Materials for Long Wavelength Infrared Focal Plane Arrays , International Symposium on
Compound Semiconductors (ISCS-22) , Cheju Island, Korea -- August 29, 1995.
715. (Ga, In)(As, P) Superlattices for Optoelectronic Applications , 8th International Conference on
Superlattices, Microstructures, Microdevices (ICSMM-8) , Cincinnati, OH -- August 20, 1995.
716. III-Nitride Semiconductor Materials for Future Optoelectronics , Physics of Semiconducting
Compounds , Jaszowiec, Poland -- May 29, 1995.
717. High Power Laser Diodes , International Symposium on Low Dimensional Structures and Devices
(LDSD '95) , Singapore -- May 8, 1995.
718. Future Semiconductor Materials for Optoelectronics , International Symposium on Heterostructures
in Science and Technology , Wurzburg, Germany -- March 13, 1995.
719. Optoelectronic Integrated Circuit Materials, Physics, and Devices , Conference Chair, SPIE
Photonics West '95 , San Jose, CA -- February 4, 1995.
720. Theoretical investigation of Jth and hd vs. Cavity Length for InGaAsP/GaAs High Power
Lasers , Lasers and Electro-Optics Society (LEOS) '94 7th Annual Meeting , Boston, MA -- November
1, 1994.
721. Optimization of InGaAsP/GaAs Laser Diode Processing for High-Power Operation , Lasers and
Electro-Optics Society (LEOS) '94 7th Annual Meeting , Boston, MA -- November 1, 1994.
722. Exploration in the Whole Spectrum of III-V Semiconductors for Optoelectronic Device
Applications , Department of Electrical and Computer Engineering, University of California at
Davis , Davis, CA -- October 28, 1994.
723. Exploration in the Whole Spectrum of III-V Semiconductors , 1st International Conference on
Materials for Microelectronic , Barcelona, Spain -- October 17, 1994.
724. Co-chair of Session at 1st International Conference on Materials for Microelectronics , Barcelona,
Spain -- October 17, 1994.
725. Session Chair, The Electrochemical Society Meeting on 2-20�m Wavelength Infrared Detectors:
Physics and Applications , Miami Beach, FL -- October 12, 1994.
726. Development of InTlSb Infrared Photodetectors Grown by LP-MOCVD , The Electrochemical
Society Meeting on 2-20�m Wavelength Infrared Detectors: Physics and Applications , Miami
Beach, FL -- October 11, 1994.
727. Peculiarities of Operation Characteristics of High-Power InGaAsP/GaAs 0.8 �m Laser
Diodes , IEEE 14th International Semiconductor Laser Conference , Maui, Hawaii -- September 19,
1994.
728. Defense Advanced Research Projects Agency/Office of Naval Research Project Review Meetings ,
Arlington, VA -- September 7, 1994.
729. M2S-HTSC (IV) Conference , Grenoble, France -- July 5, 1994.
730. Member Proposal Review Panel for the Quantum Electronics, Waves, and Beams Program, National
Science Foundation , Arlington, VA -- June 22, 1994.
731. Novel Devices , Advanced Research Projects Agency/Microelectronics Technology Office
(DARPA/MTO) Program Reviews , Alexandria, VA -- June 9, 1994.
732. International Advisory Board on Semiconductors, Polish Committee of Science , Warsaw, Poland -May 11, 1994.
733. InGaAsP/GaAs High-Power Lasers for Nd:YAG Pumping , Conference on Lasers and ElectroOptics (CLEO '94) , Anaheim, CA -- May 8, 1994.
734. Diode Laser Technology Conference (DLTC) , Ft. Walton Beach, FL -- April 19, 1994.
735. Program Committee, Conference on Receivers, Transmitters, and WDMs for Fiber Optic Networks ,
Amsterdam, Netherlands -- March 20, 1994.
736. Nanophase Materials Conference, Engineering Foundation , Davos, Switzerland -- March 12, 1994.
737. Kopin Corporation Phase II Presentation, U.S. Space and Strategic Defense Command , Huntsville,
AL -- March 11, 1994.
738. Physics and Applications of Advanced Semiconductor Technology and Future Trends , Physics
Department, University of Western Ontario , London, Canada -- March 9, 1994.
739. GaN Based Materials for Blue Lasers , Workshop on Compound Semiconductor Materials and
Devices (WOCSEMMAD '94) , San Francisco, CA -- February 20, 1994.
740. InGaAsP/GaAs diode lasers for Nd:YAG pumping , SPIE Conference OE/LASE '94 , Los Angeles,
CA -- January 24, 1994.
741. International Advisory Board on Semiconductors, Polish Committee of Science , Warsaw, Poland -January 4, 1994.
742. Growth of III-V Nitrides , National Research Council, Committee on Materials for HighTemperature Semiconductor Devices , Washington, DC -- December 14, 1993.
743. Optoelectronic Research at Northwestern and Industry Relations , Italian Trade Commission and
Northwestern's International Business Development Program , Chicago, IL -- December 9, 1993.
744. Optoelectronic Materials and Devices , University of Arizona , Tucson, AZ -- November 18, 1993.
745. IEEE Lasers and Electro-Optics Society 1993 Annual Meeting , San Jose, CA -- November 15, 1993.
746. International Conference on Silicon Carbide and Related Materials , Washington, DC -- November 1,
1993.
747. Electrochemical Society Conference, International Symposium on Long Wavelength Infrared
Detectors and Arrays: Physics and Applications , New Orleans, LA -- October 10, 1993.
748. Materials for Bloch Oscillations Devices , Army Research Office, Bloch Oscillations Workshop ,
Research Triangle Park, NC -- September 13, 1993.
749. GaN via MOCVD , Office of Naval Research, Electronic/Optical Materials Program review ,
Arlington, VA -- June 14, 1993.
750. Chair & Host, International Workshop on Future Trends of Quantum Structures and Device
Applications , Evanston, IL -- June 7, 1993.
751. Thermal Stability of GaN Thin Films Grown by MOCVD on 6H-SiC and Sapphire Substrates , U.S.
Naval Research Laboratory, Tri-Service SIC Workshop , Washington, DC -- May 13, 1993.
752. Next Generation Semiconductor Materials for High Performance Optoelectronic Devices , Institute
of Electrical and Electronic Engineers (IEEE), Motorola, Inc., IEEE Electron Devices Society
Chapter Meeting , Schaumburg, IL -- May 5, 1993.
753. Optoelectronic Material , Consultate General of France, University of Michigan-Ann Arbor,
National Science Foundation, and U.S. Air Force Office of Scientific Research, French and American
Midwestern Symposium , Ann Arbor, MI -- April 28, 1993.
754. InGaAsP Diodes , U.S. Air Force Phillips Laboratory, Diode Laser Technology Program
Conference , Albuquerque, NM -- April 20, 1993.
755. Semiconductor Materials and Their Applications , School of Electrical Engineering, Cornell
University , Ithaca, NY -- March 30, 1993.
756. Current and Future Objectives of the Center for Quantum Devices , Department of Physics and
Astronomy, Northwestern University , Evanston, IL -- February 10, 1993.
757. Defense Advanced Research Programs Agency, Workshop on Intelligent Processing for MBE and
MOCVD , Santa Fe, NM -- January 27, 1993.
758. Chair, SPIE Integrated Optics and Optoelectronics Conference , Los Angeles, CA -- January 20, 1993.
759. U.S. Army Research Office , Research Triangle Park, NC -- January 14, 1993.
760. Defense Advanced Research Programs Agency, Materials Technology Office Program Review
Meeting , MacLean, VA -- December 11, 1992.
761. Materials Research Society Fall 1992 Meeting , Boston, MA -- November 28, 1992.
762. Office of Naval Research, Workshop on Optoelectronics , Charlottesville, VA -- November 16, 1992.
763. French Consulate , Chicago, IL -- October 3, 1992.
764. 6th International Conference on Ferrites , Tokyo, Japan -- September 29, 1992.
765. 13th IEEE International Semiconductor Laser Conference , Tokyo, Japan -- September 21, 1992.
PhD Degrees Conferred
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
Dr. Abbas Haddadi, Dissertation Title: Type-II Antimonide-based Superlattices for High Performance
Infrared Detectors and Imagers, Graduated: August 2015, Current Appointment: Postdoctral Fellow,
Northwestern University, Evanston IL
Neelanjan Bandyopadhyay, Dissertation Title: Modeling, design, growth, & characterization of strain
balanced quantum cascade lasers (3-11 um), grown by gas-source molecular beam epitaxy, Graduated: June
2015, Current Appointment: Post-Doctoral Scholar, Northwestern University
Dr. Andy Guanxi Chen, Dissertation Title: Type-II InAs/GaSb Superlattices Photodetector for 3rd
Generation Infrared Imaging, Graduated: January 2015, Current Appointment: Intel
Dr. Simeon Bogdanov, Dissertation Title: Planar Engineering for Dark Current Suppression in Type-II
Superlattice Infrared Photodiodes, Graduated: April 2014, Current Appointment: Research Scientist,
Purdue University
Dr. Kevin Kim, Dissertation Title: Advanced Design Techniques for Si LDMOS RFIC Operation Beyond
2GHz, Graduated: June 2013, Current Appointment: Senior Manager R&D, RFIC at Infineon
Technologies, San Francisco, California
Dr. Stanley Tsao, Dissertation Title: Quantum dot-quantum Well Infrared Photodetectors for Focal Plane
Arrays, Graduated: June 2013
Dr. Edward Kwei-wei Huang, Dissertation Title: Multi-spectral Infrared Photodetectors and Focal Plane
Arrays based on Band-engineered Type-II InAs / GaSb Superlattices and its Variants, Graduated: June
2013, Current Appointment: Senior Engineer, Teledyne Scientific and Imaging
Dr. Siamak Abdollahi Pour, Dissertation Title: Theoretical investigation, design and characterization of
type-II InAs/GaSb material and photodetectors aimed at realization of high performance, high temperature
and low cost infrared detection and imaging, Graduated: June 2012, Current Appointment: Senior Manager
of Strategy and M&A at Microsoft, Chicago, Illinois
Dr. Yanbo Bai, Dissertation Title: High Wallplug Efficiency Quantum Cascade Lasers, Graduated: June
2011, Current Appointment: Research Assistant Professor, Northwestern University, Evanston, IL
Dr. Can Bayram, Dissertation Title: III-NITRIDE OPTOELECTRONIC DEVICES: AlGaInN Gap
Engineering from Ultraviolet and Visible Wavelengths towards Terahertz Regime, Graduated: June 2011,
Current Appointment: Postdoctoral Research Scientist Thomas J. Watson Research Center, Yorktown
Heights, New York
Dr. Burç Gökden, Dissertation Title: Photonic Crystal Distributed Feedback Quantum Cascade Lasers,
Graduated: June 2011, Current Appointment: Integration Engineer at Intel Corporation, Portland, Oregon
Dr. Binh-Minh Nguyen, Dissertation Title: Theoretical Design and Material Growth of Type-II
Antimonide-based Superlattices for Infrared Detection and Imaging, Graduated: December 2010, Current
Appointment: Director's Postdoctoral Fellow at Los Alamos National Laboratory, Albuquerque, New
Mexico
Dr. Pierre-Yves Delaunay, Graduated: June 2010, Current Appointment: Research engineer at Hughes
Research Laboratories (HRL), Santa Monica, California
Dr. Darin Hoffman, Dissertation Title: Minority carrier dynamics of type-II InAs/GaSb superlattice
photodiodes via optical and electrical
characterization, Graduated: December 2009, Current Appointment: Price to Win Lead at Raytheon Space
and Airborne Systems, Los Angeles, CA
Dr. Kathryn Minder, Dissertation Title: AlGaN UV Optoelectronic Devices: Device Design, Fabrication
and Characterization, Graduated: December 2008, Current Appointment: Raytheon Systems, Waltham, MA
Dr. Allan J. Evans, Dissertation Title: GasMBE Growth and Characterization of Strained Layer InPGaInAs-AlInAs Quantum Cascade Lasers, Graduated: June 2008, Current Appointment: Program Manager
for National & DoD Space / Advanced Technologies, Teledyne Scientific and Imaging, Camarillo, CA
Dr. Jean Nguyen, Dissertation Title: Dielectric Thin Films by Ion-Beam Sputtering Deposition for III-V
based Infrared Optoelectronic Imaging, Graduated: June 2008, Current Appointment: Patent Agent at
Morrison & Foerster LLP, San Francisco, California
Dr. Ho-Chul Lim, Dissertation Title: Modeling of Quantum Dot Infrared Photodetectors,
Graduated: December 2007, Current Appointment: Process Engineer, Intel Corporation, Portland, Oregon
19. Dr. Andrew Hood, Dissertation Title: Surface Passivation and performance characteristics of type-II InAsGaSb Superlattice infrared detectors for FPAs, Graduated: December 2007, Current Appointment: FLIR
Electro-Optical Components; Ventura, California
20. Dr. Ryan McClintock, Dissertation Title: UV Photodetectors, Focal Plane Arrays, and Avalanche
Photodiodes, Graduated: June 2007, Current Appointment: Research Associate Professor, Northwestern
University, Evanston IL
21. Dr. Wei Zhang, Dissertation Title: Quantum dot infrared photodetectors (QDIPs)., Graduated: June 2006,
Current Appointment: Staff Scientist, Veeco Corporation, Turbodisc Division, Summerset, New Jersy
22. Dr. Alireza Yasan, Dissertation Title: Ultraviolet light emitters based on Al(x)Ga(1-x)N/AlN quantum
structures., Graduated: June 2006, Current Appointment: Sensor manager at Heptagon Advanced Micro
Optics , San Francisco, California
23. Dr. Aaron Gin, Dissertation Title: Electron beam lithography for the fabrication of nanopillars in type II
InAs/GaSb superlattices for multicolor infrared focal plane arrays, Graduated: December 2005, Current
Appointment: Pattent Agent, McDonnell Boehnen Hulbert & Berghoff, LLP
24. Dr. Yajun Wei, Dissertation Title: Type II InAs/GaSb superlattice photodiodes and infrared focal plane
arrays, Graduated: December 2005, Current Appointment: Technology Development Engineer at L-3
Communications , Austin, Texas
25. Dr. Jutao Jiang, Dissertation Title: Infrared focal plane array based on GaInAs/InP quantum well infrared
photodetectors, Graduated: June 2004, Current Appointment: Manager, Sensor Characterization/Test/ISP at
SiOnyx Inc., Portland, Oregon
26. Dr. Steven Slivken, Dissertation Title: Quantum cascade lasers grown by gas-source molecular beam
epitaxy, Graduated: June 2002, Current Appointment: Research Associate Professor; Northwestern
University, Evanston, IL
27. Dr. Hooman Mohseni, Dissertation Title: Type-II InAs/GaSb superlattices for infrared detectors,
Graduated: June 2001, Current Appointment: Associate Professor, Northwestern University, Evanston, IL
28. Dr. Matthew Erdtmann, Dissertation Title: GaInAs/InP quantum well infrared photodetectors on Si
substrate for low-cost focal plane arrays, Graduated: June 2001, Current Appointment: Senior Engineer at
Agiltron, Woburn, MA
29. Dr. Brett Lane, Dissertation Title: Low-pressure metal organic chemical vapor deposition growth of
InAsSbP based materials for infrared laser applications, Graduated: June 2001, Current
Appointment: Panduit Corporation, Orland Park, IL
30. Dr. Joseph Wojkowski, Dissertation Title: Investigation of InAsSb-based uncooled infrared photodiodes
for the proximity fuze application, Graduated: June 2001, Current Appointment: Senior Manager at
Protiviti, Chicago
31. Dr. Danielle Walker, Dissertation Title: Aluminum gallium nitride ultraviolet photodetectors : device
design, fabrication and characterization, Graduated: June 2000, Current Appointment: senior director of the
Semiconductor Technology Lab for General Electric, Schenectady, NY
32. Dr. Patrick Kung, Dissertation Title: III-nitride semiconductor films and device structures grown by low
pressure MOCVD, Graduated: June 2000, Current Appointment: Professor, Alabama University
33. Dr. Jaejin Lee, Dissertation Title: Exploration of Bi and Tl containing III-V materials for uncooled longwavelength infrared photodetector applications, Graduated: June 2000, Current Appointment: Ajou
University, SOUTH KOREA
34. Dr. Seongsin Kim, Dissertation Title: MOCVD growth and characterization of epitaxial quantum dots for
optoelectronic devices, Graduated: December 1999, Current Appointment: Professor, Alabama University
35. Dr. Di Wu, Dissertation Title: MOCVD growth and characterization of InAsSb/InAs(SbP) on InAs
substrate for the mid-infrared laser applications, Graduated: June 1999, Current Appointment: Sienna
Technologies, Inc., Woodinville, WA
36. Dr. Jedon Kim, Dissertation Title: Investigation of InAsSb material system for uncooled long-wavelength
infrared photodetector applications, Graduated: June 1999, Current Appointment: Samsung Electronics
Co., SOUTH KOREA
37. Dr. Erick Michel, Dissertation Title: Sb-based materials for infrared photodetectors : growth,
characterization, fabrication, and analysis, Graduated: December 1998, Current Appointment: Patent Agent
for McAndrews Held & Malloy, Ltd., Chicago, IL
38. Dr. Xiaolong Zhang, Dissertation Title: Investigation of optical properties of III-nitrides,
Graduated: December 1998, Current Appointment: Onetta, Sunnyvale, CA
39. Dr. Hyuk-Jong Yi, Dissertation Title: Modeling and analysis of Al-free near- and mid-infrared
semiconductor lasers, Graduated: June 1998, Current Appointment: Tri-Quint Semiconductor, Inc.,
Breinigsville, PA
40. Dr. Adam Saxler, Dissertation Title: Exploration of LP-MOCVD grown III-nitrides on various substrates,
Graduated: June 1998, Current Appointment: Cree Research, Inc., Durham, NC
41. Dr. Christoper Jelen, Dissertation Title: Ga(x)In(1-x)As(y)P(1-y)-based n-type long wavelength quantum
well infrared photodetectors: Growth, characterization, and fabrication, Graduated: June 1998, Current
Appointment: Consulting Engineer (Physicist T6) at Northrop Grumman Electronic Systems, Rolling
Meadows, IL
42. Dr. Ivan Eliashevich, Dissertation Title: Radiative properties of high-power 808 nm aluminum-free laser
diodes, Graduated: June 1997, Current Appointment: Director of R&D at Emcore Corporation's EMD
division, Somerset, NJ
43. Dr. Jacqueline Diaz, Dissertation Title: Fabrication of high power aluminum - free 0.9 γm to 1.0 γm
InGaAsP/InGaP/GaAs lasers for optical pumping, Graduated: June 1997, Current Appointment: Emcore
Corporation, US
44. Dr. James Hoff, Dissertation Title: Quaternary GA(1-X)IN(X)AS(Y)P(1-Y) P-type quantum well
intersubband photodetectors, Graduated: December 1996, Current Appointment: Fermi National
Laboratory, Batavia, IL
45. Dr. Yeun-Ho Choi, Dissertation Title: Growth and characterization of InSb and InTISb narrow-bandgap
materials for infrared detector applications., Graduated: December 1995, Current Appointment: LG
Electronics Institute of Technology, SOUTH KOREA
46. Dr. Xiaoguang He, Dissertation Title: MOCVD growth and characterization of Ga(x)In(1-x)As(y)P(1-y)
on GaAs substrate for optoelectronic device applications, Graduated: June 1995, Current
Appointment: Vice President -- Sanan Electronics Co., Ltd. CHINA
47. Dr. Chien-Jen Sun, Dissertation Title: MOCVD growth and characterization of III-nitride for
optoelectronic device applications, Graduated: December 1994, Current Appointment: Deputy director of
Optoelectronics Device and System Application Division of Electronics & Optoelectronics Research
Laboratories (EOL) under the government-backed Industrial Technology Research Institute (ITRI)
48. Dr. Cengiz Besikci, Dissertation Title: Advanced modeling concepts and material considerations for III-V
heterostructure electron devices on GaAs substrates, Graduated: June 1994, Current
Appointment: Professor at Middle East Technical University, TURKEY
49. Dr. Kamran Mobarhan, Dissertation Title: nGaAsP / InP 1.3 μm double heterostructure laser grown on Si
substrate by metalorganic vapor phase epitaxy, Graduated: June 1994, Current Appointment: Program
Manager - New Product Development at NeoPhotonics de C.V.
Masters Degrees Conferred
1.
Dr. Abbas Haddadi, Graduated: March 2015, Current Appointment: Postdoctral Fellow, Northwestern
University, Evanston IL
2. Yinjun Zhang , Dissertation Title: III-Nitride LEDs, Graduated: June 2013
3. Anisa Myzaferi, Graduated: December 2010
4. Maho Taguchi, Dissertation Title: Quantum Dot Infrared Photodetectors, Graduated: December 2006
5. John Szafraniec, Dissertation Title: Theoretical Analysis of Quantum Cascade Lasers, Graduated: June
2006
6. Adnan Bajowala, Dissertation Title: Type-II Superlattices for Uncooled 8-12 μm Detectors,
Graduated: December 2004
7. Anthony Matlis, Dissertation Title: Fabrication of DFB Quantum Cascade Lasers, Graduated: June 2002
8. Peter Sandvik, Dissertation Title: Design and Development of UV and Solar-Blind AlxGa1-xN P-I-N
Photodetectors, Graduated: June 2001
9. Markus Rutz, Dissertation Title: Electron Count Simulation of QWIPs, Graduated: June 2000
10. Jia-Jiun Wu, Dissertation Title: LP-MOCVD Growth and Characterization of III-Nitrides,
Graduated: December 1999
11. Dr. Joseph Wojkowski, Dissertation Title: Uncooled InAsxSb1-x Infrared Photodetectors for the 5-8 μm
Atmospheric Absorption Spectrum, Graduated: June 1999, Current Appointment: Senior Manager at
Protiviti, Chicago
12. Tso-Chun Wang, Dissertation Title: High Resolution X-ray Diffraction Characterization of III-Nitrides
Grown by MOCVD, Graduated: December 1997
13. Yii-Li Cho, Dissertation Title: Dark Current in the Quantum Well Infrared Photodetectors,
Graduated: December 1996
14. Gregory Lukas, Dissertation Title: Aspects in the Development and Application of Semiconductor Laser
Diodes, Graduated: December 1996
15. Dr. Adam Saxler, Dissertation Title: LP-MOCVD Growth and Characterization of III-Nitrid...,
Graduated: December 1994, Current Appointment: Cree Research, Inc., Durham, NC
16. Gurpreet Singh, Dissertation Title: MBE Growth and Characerization of InSb for Far Infrared
Photodetectors, Graduated: December 1994
17. S.Z. Lin, Dissertation Title: Characterization of GaAs/GaInP Superlattices and Single Heterojunctions by
High Resolution X-Ray Diffraction, Graduated: June 1992
18. Dr. Yeun-Ho Choi, Dissertation Title: Design, construction and implementation of chemical bevel
revelation for characterization of III-V semiconductors, Graduated: June 1992, Current Appointment: LG
Electronics Institute of Technology, SOUTH KOREA
Visiting Scholars Hosted
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
14.
15.
16.
17.
18.
19.
20.
21.
22.
23.
24.
25.
26.
27.
28.
29.
30.
31.
32.
33.
34.
35.
Konstantinos Zekentes, Country of Origin: Greece
Konstantinos Zekentes, Country of Origin: Greece, Visit period: 3
Konstantinos Zekentes , Country of Origin: Greece
William A. Gaviria Rojas, Country of Origin: USA, Visit period: September 2013 to July 2015
Arthur Ricardo Deps Miguel Ferreira, Country of Origin: Brazil, Visit period: 05/18/2015-08/04/2015
Dario Melchionni, Country of Origin: Italy, Visit period: September 2014 - May 2015
Xun Victor Suo, Country of Origin: France, Visit period: April 2015 -Present
Ilkay Demir, Country of Origin: Turkey, Visit period: December 2014 - Present
Anna Szerling, Country of Origin: Poland, Visit period: October 2014 - Decemeber 2014
Bradley Elkus, Country of Origin: USA, Visit period: May 2014 - July 2014
Arnaud Janvier, Country of Origin: France, Visit period: May 2014 - July 2014
Alexandre Godey, Country of Origin: France, Visit period: May 2014 - Present
Dr. Bijan Movaghar, Country of Origin: United Kingdom, Visit period: February 2004-June 2006,
January 2008 - May 2008, February 2014-Present
Benjamin Rahnema, Country of Origin: Northwestern University, USA, Visit period: January 2013 January 2014
Dr. Chu-Young Cho, Country of Origin: Korea, Visit period: June 2012 – January 2014
Rofeideh Mansourian, Country of Origin: Iran, Visit period: October 2013 - January 2014
Dr. Sofiane Belahsene, Country of Origin: France, Visit period: January 2014
Prasanth Reddy Bijjam, Country of Origin: USA, Visit period: October 2012 - December 2013
Dr. Shaban Ramezani-Darvish, Country of Origin: Iran, Visit period: May 2000 - December 2013
Jason Arkin, Country of Origin: USA, Visit period: June 2013 - December 2013
George Mach, Country of Origin: USA, Visit period: September 1991 - May 2013
Yinjun Zhang , Country of Origin: China, Visit period: September 2011 - March 2013
David Heydari, Country of Origin: USA, Visit period: October 2012 - Present
Selamnesh Nida, Country of Origin: Ethiopia, Visit period: September 2012 - March 2013
Brock Burdyl, Country of Origin: USA, Visit period: March 2013 - June 2013
Taylor Kewei Xu, Country of Origin: USA, Visit period: March 2013 - August 2013
Aaron Orwasher, Country of Origin: USA, Visit period: March 2013 - Present
Avsar Dahal, Country of Origin: Nepal, Visit period: September 2012 - February 2013
Dr. Quanyong Lu , Country of Origin: China, Visit period: July 2010 -- Present
Dr. Simon Gautier, Country of Origin: France, Visit period: August 2012 - August 2013
Dr. Zahra Vashaei, Country of Origin: Iran, Visit period: June 2009 - January 2013
Bing Zhang, Country of Origin: China, Visit period: August 2012 - January 2013
Chelly Nathan, Country of Origin: France , Visit period: March 2012 – June 2012
Francois Callewaert, Country of Origin: France, Visit period: March – June 2012
Dr. Yanbo Bai, Country of Origin: China, Visit period: May 2011-June 2011
36. Dr. Binh-Minh Nguyen, Country of Origin: France, Visit period: April 2005-August 2005 & Oct 2010 Dec 2010
37. Dr. Ekber Selcuk, Country of Origin: Turkey & Belgium, Visit period: December 2009 - December 2010
38. Jackie Bao Wang, Country of Origin: China, Visit period: September 2010
39. Dr. Behrang Poorganji, Country of Origin: Iran, Visit period: August 2010 - August 2011
40. Jerome Lair, Country of Origin: France, Visit period: April 2010 - June 2010
41. Matthieu Colotte, Country of Origin: France, Visit period: April 2010 - June 2010
42. Pierre Lavenus, Country of Origin: France, Visit period: April 2010 - July 2010
43. Anh Hoang, Country of Origin: France, Visit period: April 2010 - Present
44. Dr. Nam Ki Cho, Country of Origin: Korea, Visit period: April 2010 - May 2010
45. Elham Beheshtizavareh, Country of Origin: Iran, Visit period: January 2010 - February 2010
46. Dr. Won Jae Lee, Country of Origin: Korea, Visit period: January 2009-January 2010
47. Dr. Chunyu Zang, Country of Origin: China, Visit period: December 2009 - May 2010
48. Dr. Shigeyuki Kuboya, Country of Origin: Japan, Visit period: November 2008 - November 2009
49. Dr. Shaibal Mukherjee, Country of Origin: India, Visit period: August 2009 - July 2010
50. Dr. Nicolas Pere-Laperne, Country of Origin: France, Visit period: October 2008 - August 2009
51. Luc Nguyen-the, Country of Origin: France, Visit period: April 2009 - August 2009
52. Thomas Tuo Huang, Country of Origin: USA/China, Visit period: June 2009 - August 2009
53. Alan Mahdaoui , Country of Origin: USA/France, Visit period: February 2009 - July 2009
54. Fabien Khouri, Country of Origin: France, Visit period: April 2009-July 2009
55. Sandra Russac, Country of Origin: France, Visit period: April 2009-July 2009
56. Dr. Takayuki Yamanaka, Country of Origin: Japan, Visit period: February 2008 - June 2009
57. Amir Abbas Jalali Roudsar, Country of Origin: Iran, Visit period: January 2009-February 2009
58. Dr. IL-Kyu Park, Country of Origin: Korea, Visit period: March 2008 - January 2009
59. Dr. Jose Luis Pau Vizcaino, Country of Origin: Spain, Visit period: October 2006 - September 2008
60. Guillaume Rene, Country of Origin: France, Visit period: March 2008 - June 2008
61. Aurelien Joly , Country of Origin: France, Visit period: March 2008 - June 2008
62. Bruno Fain, Country of Origin: France, Visit period: April 2008 - July 2008
63. Dr. Wei Zhang, Country of Origin: China, Visit period: June 2006 - March 2008
64. Dr. Ferechteh Hosseini Teherani, Country of Origin: France, Visit period: October 2007 - December
2007
65. Dr. Patrick Kung, Country of Origin: France, USA, Visit period: April 1993-August 1993; June 2000-July
2007
66. Dr. Ryan McClintock, Country of Origin: Northwestern University, Evanston IL, USA, Visit period: June
2007 - July 2007
67. Philippe Sung, Country of Origin: France, Visit period: February 2007 - June 2007
68. Dr. Kan Mi, Country of Origin: China, Visit period: February 1999 - May 2007
69. Dr. Euzi Fernandes da Silva, Country of Origin: Brazil, Visit period: January 2005-October 2006
70. Dr. Alain Quivy, Country of Origin: Brazil, Visit period: January 2005-October 2006
71. Dr. Erick Michel, Country of Origin: United States, Visit period: March 2005-September 2006
72. Dr. Jae Su Yu, Country of Origin: Korea, Visit period: October 2002-August 2006
73. Vuong Thi Kim Thanh, Country of Origin: France, Visit period: April 2006-August 2006
74. Dac Tring Nguyen, Country of Origin: France, Visit period: April 2006-August 2006
75. Xavier Martinet, Country of Origin: France, Visit period: April 2006-July 2006
76. Mathieu Russac, Country of Origin: France, Visit period: April 2006-June 2006
77. Dr. Frank Fuchs, Country of Origin: Germany, Visit period: September 2004-August 2005
78. Arnaud Lecallier, Country of Origin: France, Visit period: June 2005-August 2005
79. Dr. Pierre-Yves Delaunay, Country of Origin: France, Visit period: April 2005-July 2005
80. Dr. Woo-Gwang Jung, Country of Origin: Korea, Visit period: January 2004-July 2005
81. Dr. Vahid R. Yazdanpanah, Country of Origin: Iran, Visit period: November 2004-April 2005
July 2003-June 2004
82. Dr. Shahriar Khosravani, Country of Origin: Iran/U.S., Visit period: January 2004-December 2004
83. Quang Nguyen, Country of Origin: France, Visit period: September 2003-January 2004
84. Nicolas Ott, Country of Origin: France, Visit period: April 2004-August 2004
85. Dr. Do-Hyun Kim, Country of Origin: Korea, Visit period: November 2002-December 2003
86. Dr. Jongbum Nah, Country of Origin: Korea, Visit period: August 2002-July 2003
87.
88.
89.
90.
91.
92.
Luca Gautero, Country of Origin: Italy, Visit period: July 2003-September 2003
Dr. Kao-Chih Syao, Country of Origin: Taiwan, Visit period: March 2003-April 2003
Dr. Haoxiang Zhang, Country of Origin: China, Visit period: July 2001-August 2002
Dr. Igor Tralle, Country of Origin: Poland, Visit period: August 2001-July 2002
Aurelien David, Country of Origin: France, Visit period: April 2002-July 2002
Dr. Francois Guastavino, Country of Origin: France, Visit period: March 2000-September 2000
April 2002-June 2002
93. Julien Poncet, Country of Origin: France, Visit period: April 2002-June 2002
94. Dr. Zhaojun Lin, Country of Origin: China, Visit period: September 2000-November 2001
95. Dr. Magdy Mourad, Country of Origin: Egypt, Visit period: October 2000-September 2001
96. Mohamed Azize, Country of Origin: France, Visit period: June 2001-September 2001
97. Dr. Fatemeh Shahedipour, Country of Origin: Iran, Visit period: September 1999-August 2001
98. Benoit Nesme, Country of Origin: France, Visit period: April 2001-August 2001
99. Dr. Abbes Tahraoui, Country of Origin: Algeria, Visit period: February 1999-January 2001
100. Dr. Zhen Wu, Country of Origin: China, Visit period: November 1997-October 2000
101. Vinayak Dangui, Country of Origin: France, Visit period: April 2000-July 2000
102. Sebastien Bourdelais, Country of Origin: France, Visit period: April 2000-June 2000
103. Dr. Song Tong, Country of Origin: China, Visit period: May 1999-April 2000
104. Dr. Vipan Kumar, Country of Origin: India, Visit period: April 1999-March 2000
105. Dr. Keijan Luo, Country of Origin: China, Visit period: May 1999-March 2000
106. Dr. Vladimir Litvinov, Country of Origin: Ukraine, Visit period: January 1996-September 1999
107. Nyungeon Seon, Country of Origin: Korea, Visit period: September 1998-August 1999
108. Juan Blanch, Country of Origin: France, Visit period: April 1999-August 1999
109. Dr. M. De Vittorio, Country of Origin: Italy, Visit period: February 1999-March 1999
110. Dr. Xinghong Zhang, Country of Origin: China, Visit period: February 1999-October 2000
111. Dr. In-Hwan Lee, Country of Origin: Korea, Visit period: November 1997-January 1999
112. Alexander Stein, Country of Origin: Germany, Visit period: July 1998-September 1998
113. Eva Monroy, Country of Origin: Spain, Visit period: July 1998-September 1998
114. Dr. Francisco Sanchez, Country of Origin: Spain, Visit period: July 1998-September 1998
115. Julien Grascoeur, Country of Origin: France, Visit period: April 1998- June 1998
116. Dr. Ho-Ki Kwon, Country of Origin: Korea, Visit period: September 1997-February 1998
117. Dr. Jianren Xu, Country of Origin: China, Visit period: January 1994-December 1997
118. Thibaut David, Country of Origin: France, Visit period: July 1997-November 1997
119. Dr. Kwan Shik Kim, Country of Origin: Korea, Visit period: October 1995-September 1997
120. Dr. Han-Jo Lim, Country of Origin: Korea, Visit period: February 1997-August 1997
121. Dr. Hyung-Il Jeon, Country of Origin: Korea, Visit period: October 1995-August 1997
122. Dr. Hao Feng, Country of Origin: China, Visit period: March 1997-July 1997
123. Dr. Milan Tadic, Country of Origin: Yugoslavia, Visit period: August 1996-December 1996
124. Dr. Kee Young Lim, Country of Origin: Korea, Visit period: October 1995-October 1996
125. Rozen Metzinger, Country of Origin: France, Visit period: April 1996-June 1996
126. Dr. Sirus Javadpour, Country of Origin: Iran, Visit period: September 1995-March 1996
127. Dr. Ian Ferguson, Country of Origin: Scotland, Visit period: April 1994-February 1996
128. Dr. Jozef Piotrowski, Country of Origin: Poland, Visit period: January 1995-July 1995
129. Dr. Antoni Rogalski, Country of Origin: Poland, Visit period: February 1995-July 1995
130. Dr. Lijun Wang, Country of Origin: China, Visit period: March 1993-June 1995
131. Dr. Emil Kolev, Country of Origin: Bulgaria, Visit period: April 1992-February 1995
132. Dr. Philippe Bove, Country of Origin: France, Visit period: March 1994-February 1995
133. Guillaume Labeyrie, Country of Origin: France, Visit period: February 1993-June 1994
134. Dr. Dmitri Garbuzov, Country of Origin: Russia, Visit period: June 1993-May 1994
135. Olivier Duchemin, Country of Origin: France, Visit period: December 1993-February 1994
136. Dr. Hitoshi Ohsato, Country of Origin: Japan, Visit period: April 1993-January 1994
137. Dr. Wilson Caravalho, Country of Origin: Brazil, Visit period: August 1993-September 1993
138. Dr. X. (Rose) Wang, Country of Origin: China, Visit period: January 1993-March 1993
139. Dr. Rengarajan Sudarsanan, Country of Origin: India, Visit period: January 1992-January 1993
140. Stephane Charriere, Country of Origin: France, Visit period: July 1992-December 1992