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Jameco Part Number 786015
IRF540A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
RDS(on) = 0.052 Ω
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 28 A
Improved Gate Charge
Extended Safe Operating Area
TO-220
Ο
175 C Operating Temperature
Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.041 Ω (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
Characteristic
Drain-to-Source Voltage
28
19.8
Ο
Drain Current-Pulsed
VGS
Gate-to-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TL
A
1
O
110
+
_ 20
A
O
1
O
1
O
O3
523
mJ
28
A
2
V
10.7
mJ
6.5
V/ns
Total Power Dissipation (TC=25 C )
107
W
Linear Derating Factor
0.71
W/ C
Ο
TJ , TSTG
V
Continuous Drain Current (TC=100 C)
IDM
PD
Units
100
Continuous Drain Current (TC=25 C)
Ο
ID
Value
Operating Junction and
Ο
- 55 to +175
Storage Temperature Range
Ο
Maximum Lead Temp. for Soldering
C
300
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
R θJC
Junction-to-Case
--
1.4
R θCS
Case-to-Sink
0.5
--
R θJA
Junction-to-Ambient
--
62.5
Units
Ο
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRF540A
Electrical Characteristics (TC=25 C unless otherwise specified)
Ο
Symbol
Characteristic
BVDSS
Drain-Source Breakdown Voltage
∆ BV/ ∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
Min. Typ. Max. Units
100
--
--
V
Ο
0.11
--
V C
2.0
--
4.0
V
Gate-Source Leakage , Forward
--
--
100
Gate-Source Leakage , Reverse
--
--
-100
--
--
10
--
--
100
--
--
0.052
Ω
VGS=10V,ID=14A
4
O
--
Ω
VDS=40V,ID=14A
4
O
Gate Threshold Voltage
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
--
22.56
Ciss
Input Capacitance
--
1320 1710
Coss
Output Capacitance
--
325
380
Crss
Reverse Transfer Capacitance
--
148
170
td(on)
Turn-On Delay Time
--
18
50
Rise Time
--
18
50
Turn-Off Delay Time
--
90
180
Fall Time
--
56
120
Qg
Total Gate Charge
--
60
78
Qgs
Gate-Source Charge
--
10.8
--
Qgd
Gate-Drain(“Miller”) Charge
--
27.9
--
td(off)
tf
VGS=0V,ID=250 µ A
ID=250 µ A
See Fig 7
--
Breakdown Voltage Temp. Coeff.
gfs
tr
Test Condition
nA
µA
pF
VDS=5V,ID=250 µA
VGS=20V
VGS=-20V
VDS=100V
Ο
VDS=80V,TC=150 C
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=50V,ID=28A,
ns
RG=9.1 Ω
See Fig 13
4 O
5
O
VDS=80V,VGS=10V,
nC
ID=28A
See Fig 6 & Fig 12
4 O
5
O
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
IS
Continuous Source Current
--
--
28
ISM
Pulsed-Source Current
1
O
--
--
110
VSD
Diode Forward Voltage
4
O
--
--
1.5
V
TJ=25 C ,IS=28A,VGS=0V
trr
Reverse Recovery Time
--
132
--
TJ=25 C ,IF=28A
Qrr
Reverse Recovery Charge
--
0.63
--
ns
µC
A
Notes ;
Temperature
1
O Repetitive Rating : Pulse Width Limited by Maximum Junction
o
2
L=1mH, I AS=28A, V DD=25V, R G=27 Ω, Starting T J =25 C
O
O3 ISD <_ 28A, di/dt <_ 400A/ µs, V DD<_ BVDSS , Starting T J =25 oC
_2%
4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <
O
Essentially
Independent
of
Operating
Temperature
5
O
Integral reverse pn-diode
in the MOSFET
Ο
Ο
diF/dt=100A/ µs
4
O
N-CHANNEL
POWER MOSFET
IRF540A
Fig 1. Output Characteristics
102
Fig 2. Transfer Characteristics
102
VGS
ID , Drain Current
ID , Drain Current
[A]
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
[A]
Top :
101
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
10-1
100
175 oC
101
25 oC
- 55 oC
3. 250 µs Pulse Test
100
101
2
4
[A]
IDR , Reverse Drain Current
RDS(on) , [Ω]
Drain-Source On-Resistance
Fig 3. On-Resistance vs. Drain Current
0.08
VGS = 10 V
0.04
VGS = 20 V
0.02
@ Note : TJ
= 25 oC
30
60
8
10
90
Fig 4. Source-Drain Diode Forward Voltage
102
101
120
@ Notes :
1. VGS = 0 V
175 oC
25 oC
100
0.4
0.00
0
6
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
0.06
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
0.6
0.8
ID , Drain Current [A]
2. 250 µs Pulse Test
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
C iss
[V]
2000
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
VGS , Gate-Source Voltage
Capacitance
[pF]
2500
1500
C oss
1000
@ Notes :
1. VGS = 0 V
C rss
2. f = 1 MHz
500
00
10
101
VDS , Drain-Source Voltage [V]
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID =28.0 A
0
0
10
20
30
40
50
QG , Total Gate Charge [nC]
60
70
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized)
Drain-Source On-Resistance
BVDSS , (Normalized)
Drain-Source Breakdown Voltage
IRF540A
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75
-50
-25
0
25
50
75
100
125
150
175
3.0
2.5
2.0
1.5
1.0
2. ID = 14.0 A
0.0
-75
200
-25
0
25
50
75
100
125
150
175
200
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
30
[A]
[A]
-50
TJ , Junction Temperature [ oC]
103
Operation in This Area
is Limited by R DS(on)
ID , Drain Current
25
102
10 µs
100 µs
1 ms
10 ms
101
DC
@ Notes :
1. TC = 25 oC
100
10-1
100
20
15
10
5
2. TJ = 175 oC
3. Single Pulse
101
0
25
102
50
75
100
125
Tc , Case Temperature [ oC]
VDS , Drain-Source Voltage [V]
Thermal Response
Fig 11. Thermal Response
100
D=0.5
@ Notes :
1. Zθ J C (t)=1.4 o C/W Max.
2. Duty Factor, D=t1 /t2
0.2
0.1
10- 1
3. TJ M -TC =PD M *Zθ J C (t)
0.05
PDM
0.02
0.01
t1
single pulse
t2
θ
Z JC(t) ,
ID , Drain Current
@ Notes :
1. VGS = 10 V
0.5
10- 2
10- 5
10- 4
10- 3
10- 2
10- 1
t 1 , Square Wave Pulse Duration
100
[sec]
101
150
175
N-CHANNEL
POWER MOSFET
IRF540A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
12V
VGS
Same Type
as DUT
50K Ω
Qg
200nF
10V
300nF
VDS
Qgd
Qgs
VGS
DUT
3mA
R1
R2
Current Sampling (I G)
Resistor
Charge
Current Sampling (I D)
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
Vin
( 0.5 rated V DS )
RG
DUT
Vin
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
BVDSS
IAS
ID
RG
C
DUT
ID (t)
VDD
VDS (t)
VDD
10V
tp
tp
Time
N-CHANNEL
POWER MOSFET
IRF540A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
Driver
VGS
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
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E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
TinyLogic™
UHC™
VCX™
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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As used herein:
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support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.