SCT2080KE
SCT2080KE
N-channel SiC power MOSFET
Datasheet
Outline
VDSS
1200V
RDS(on) (Typ.)
80m
ID
35A
PD
179W
TO-247
(1) (2) (3)
Inner circuit
Features
1) Low on-resistance
(2)
2) Fast switching speed
3) Fast reverse recovery
*1
(1) Gate
(2) Drain
(3) Source
(1)
4) Easy to parallel
*1 Body Diode
5) Simple to drive
(3)
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packing
Application
・Solar inverters
Type
Tube
Reel size (mm)
-
Tape width (mm)
-
・DC/DC converters
Basic ordering unit (pcs)
・Induction heating
Taping code
・Motor drives
Marking
30
SCT2080KE
Absolute maximum ratings (Ta = 25°C)
Symbol
Value
Unit
VDSS
1200
V
Tc = 25°C
ID *1
35
A
Tc = 100°C
ID *1
22
A
ID,pulse *2
80
A
VGSS
6 to 22
V
Power dissipation (Tc = 25°C)
PD
179
W
Junction temperature
Tj
150
°C
Tstg
55 to 150
°C
Parameter
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Range of storage temperature
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1/12
2012.09 - Rev.B
DataSheet
SCT2080KE
Thermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - case
RthJC
-
-
0.7
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
50
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
Electrical characteristics (Ta = 25°C)
Parameter
Drain - Source breakdown
voltage
Symbol
V(BR)DSS
Conditions
Values
Unit
Min.
Typ.
Max.
1200
-
-
V
Tj = 25°C
-
1
10
A
Tj = 150°C
-
2
-
VGS = 0V, ID = 1mA
VDS = 1200V, VGS = 0V
Zero gate voltage
drain current
IDSS
Gate - Source leakage current
IGSS
VGS = 22V, VDS = 0V
-
-
100
nA
Gate - Source leakage current
IGSS
VGS = 6V, VDS = 0V
-
-
100
nA
1.6
-
4.0
V
-
80
117
m
Tj = 125°C
-
125
-
f = 1MHz, open drain
-
6.3
-
Gate threshold voltage
VGS (th)
VDS = VGS, ID = 4.4mA
VGS = 18V, ID = 10A
Static drain - source
on - state resistance
Gate input resistance
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RDS(on) *3 Tj = 25°C
RG
2/12

2012.09 - Rev.B
DataSheet
SCT2080KE
Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Transconductance
gfs *3
VDS = 10V, ID = 10A
-
3.7
-
Input capacitance
Ciss
VGS = 0V
-
2080
-
Output capacitance
Coss
VDS = 800V
-
77
-
Reverse transfer capacitance
Crss
f = 1MHz
-
16
-
Effective output capacitance,
energy related
Co(er)
VGS = 0V
VDS = 0V to 500V
-
116
-
Turn - on delay time
td(on)
VDD = 400V, VGS = 18V
-
35
-
ID = 10A
-
36
-
RL = 40
-
76
-
RG = 0
-
22
-
*3
tr *3
Rise time
Turn - off delay time
*3
td(off)
tf *3
Fall time
Unit
S
pF
pF
ns
Gate Charge characteristics (Ta = 25°C)
Parameter
Conditions
Symbol
Total gate charge
Qg *3
Gate - Source charge
Qgs
Gate - Drain charge
Qgd *3
Gate plateau voltage
V(plateau)
*3
Values
Min.
Typ.
Max.
VDD = 400V
-
106
-
ID = 10A
-
27
-
VGS = 18V
-
31
-
VDD = 400V, ID = 10A
-
9.7
-
Unit
nC
V
*1 Limited only by maximum temperature allowed.
*2 PW  10s, Duty cycle  1%
*3 Pulsed
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3/12
2012.09 - Rev.B
DataSheet
SCT2080KE
Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Inverse diode continuous,
forward current
Values
Conditions
IS *1
Unit
Min.
Typ.
Max.
-
-
25
A
-
-
80
A
-
4.6
-
V
-
31
-
ns
-
44
-
nC
-
2.3
-
A
Tc = 25°C
Inverse diode direct current,
pulsed
ISM
*2
Forward voltage
VSD
*3
VGS = 0V, IS = 10A
trr *3
Reverse recovery time
Reverse recovery charge
Qrr *3
Peak reverse recovery current
Irrm
IF = 10A, VR = 400V
di/dt = 150A/s
*3
Typical Transient Thermal Characteristics
Symbol
Value
Rth1
0.098
Rth2
0.237
Rth3
0.212
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Unit
K/W
4/12
Symbol
Value
Cth1
0.005
Cth2
0.032
Cth3
0.666
Unit
Ws/K
2012.09 - Rev.B
DataSheet
SCT2080KE
Electrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
120
100
PW = 1ms
Drain Current : ID [A]
Power Dissipation : PD/PD max. [%]
PW = 100us
100
80
60
40
10
Operation in this
area is limited
by RDS(ON)
1
PW = 10ms
20
0
PW = 100ms
Ta = 25ºC
Single Pulse
0.1
0
50
100
150
200
0.1
Junction Temperature : Tj [°C]
1
10
100
1000
10000
Drain - Source Voltage : VDS [V]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
Transient Thermal Resistance : Rth [K/W]
1
Ta = 25ºC
Single Pulse
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
Pulse Width : PW [s]
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5/12
2012.09 - Rev.B
DataSheet
SCT2080KE
Electrical characteristic curves
Fig.4 Typical Output Characteristics(I)
40
VGS= 16V
VGS= 18V
VGS= 14V
Drain Current : ID [A]
20
VGS= 12V
15
VGS= 10V
Ta = 25ºC
Pulsed
5
VGS= 12V
14
12
10
8
6
VGS= 10V
4
Ta = 25ºC
Pulsed
2
0
0
0
2
4
6
8
10
0
Fig.6 Tj = 150°C Typical Output
Characteristics(I)
40
Drain Current : ID [A]
VGS= 12V
VGS= 14V
VGS = 10V
15
10
Ta = 150ºC
Pulsed
5
5
VGS= 18V
16
30
20
4
VGS= 20V
18
VGS= 16V
3
20
VGS= 18V
25
2
Fig.7 Tj = 150°C Typical Output
Characteristics(II)
VGS= 20V
35
1
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Drain Current : ID [A]
VGS= 14V
16
25
10
VGS= 20V
18
30
Drain Current : ID [A]
VGS= 18V VGS= 16V
20
VGS= 20V
35
Fig.5 Typical Output Characteristics(II)
VGS= 16V
14
VGS= 14V
12
VGS= 10V
10
VGS= 12V
8
6
4
Ta = 150ºC
Pulsed
2
0
0
0
2
4
6
8
10
0
Drain - Source Voltage : VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
2
3
4
5
Drain - Source Voltage : VDS [V]
6/12
2012.09 - Rev.B
DataSheet
SCT2080KE
Electrical characteristic curves
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
100
5
Gate Threshold Voltage : V GS(th) [V]
VDS = 10V
Pulsed
Drain Current : ID [A]
10
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
1
0.1
0.01
0
2
4
6
8
10 12 14 16 18 20
VDS = 10V
ID = 10mA
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Junction Temperature : Tj [°C]
Gate - Source Voltage : VGS [V]
Fig.10 Transconductance vs. Drain Current
10
Transconductance : gfs [S]
VDS = 10V
Pulsed
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.1
0.01
0.01
0.1
1
10
100
Drain Current : ID [A]
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7/12
2012.09 - Rev.B
DataSheet
SCT2080KE
Electrical characteristic curves
Fig.11 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.15
Ta = 25ºC
Pulsed
0.6
0.4
ID = 20A
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
0.8
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
Fig.12 Static Drain - Source On - State
Resistance vs. Junction Temperature
VGS = 18V
Pulsed
ID = 20A
0.1
ID = 10A
0.05
0.2
ID = 10A
0
6
8
10
12
14
16
18
20
22
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
Gate - Source Voltage : VGS [V]
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current
1
VGS = 18V
Pulsed
0.1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.01
0.1
1
10
100
Drain Current : ID [A]
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8/12
2012.09 - Rev.B
DataSheet
SCT2080KE
Electrical characteristic curves
Fig.14 Typical Capacitance
vs. Drain - Source Voltage
Fig.15 Coss Stored Energy
10000
40
Ciss
1000
Capacitance : C [pF]
Coss Stored Energy : EOSS [uJ]
Ta = 25ºC
Coss
Crss
100
10
Ta = 25ºC
f = 1MHz
VGS = 0V
1
30
20
10
0
0.1
1
10
100
1000
0
400
600
800
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.16 Switching Characteristics
Fig.17 Dynamic Input Characteristics
20
10000
1000
Gate - Source Voltage : VGS [V]
Ta = 25ºC
VDD = 400V
VGS = 18V
RG = 0Ω
Pulsed
tf
Switching Time : t [ns]
200
td(off)
100
tr
10
td(on)
1
Ta = 25ºC
VDD = 400V
ID = 10A
Pulsed
15
10
5
0
0.01
0.1
1
10
100
0
Drain Current : ID [A]
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20
40
60
80
100
120
Total Gate Charge : Qg [nC]
9/12
2012.09 - Rev.B
DataSheet
SCT2080KE
Electrical characteristic curves
Fig.18 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.19 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
VGS = 0V
Pulsed
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
100
10
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
1
0.1
Ta = 25ºC
di / dt = 150A / us
VR = 400V
VGS = 0V
Pulsed
100
10
0.01
0
1
2
3
4
5
6
7
1
8
100
Inverse Diode Forward Current : IS [A]
Source - Drain Voltage : VSD [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
10
10/12
2012.09 - Rev.B
DataSheet
SCT2080KE
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
VGS
Fig.1-2　Switching Waveforms
Pulse width
ID
VDS
RL
D.U.T.
50%
10%
VDD
RG
90%
50%
10%
VGS
VDS
10%
90%
td(on)
90%
td(off)
tr
ton
Fig.2-1 Gate Charge Measurement Circuit
VGS
toff
Fig.2-2 Gate Charge Waveform
VG
ID
VDS
Qg
RL
VGS
D.U.T.
IG(Const.)
tf
Qgs
VDD
Qgd
Charge
Fig.3-1 di/dt Measurement Circuit
Fig.3-2 di/dt Waveform
IF
D.U.T.
IF
L
trr
0
VDD
RG
Irr 10%
DRIVER
MOSFET
Irr
drr / dt
Irr 90%
Irr 100%
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11/12
2012.09 - Rev.B
DataSheet
SCT2080KE
Dimensions (Unit : mm)
TO-247
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© 2012 ROHM Co., Ltd. All rights reserved.
12/12
2012.09 - Rev.B
Notice
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R1120A