SCTMU001F
Datasheet
N-channel SiC power MOSFET
Outline
VDSS
400V
RDS(on) (Typ.)
120m
ID
20A
PD
132W
TO220AB
Inner circuit
Features
1) Low on-resistance
(2)
2) Fast switching speed
3) Fast reverse recovery
*1
(1) Gate
(2) Drain
(3) Source
(1)
4) Easy to parallel
*1 Body Diode
5) Simple to drive
(3)
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packing
Application
・Audio
Type
Tube
Reel size (mm)
-
Tape width (mm)
-
Basic ordering unit (pcs)
Taping code
50
SCTMU001F
Marking
Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Value
Unit
VDSS
400
V
ID *1
20
A
ID,pulse *2
60
A
VGSS
-6 to 22
V
Power dissipation (Tc = 25C)
PD
132
W
Junction temperature
Tj
150
C
Tstg
-55 to 150
C
Drain - Source voltage
Continuous drain current
Tc = 25C
Pulsed drain current
Gate - Source voltage
Range of storage temperature
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1/9
2013.12 - Rev.A
Data Sheet
SCTMU001F
Thermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - case
RthJC
-
0.72
0.95
C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
C
Electrical characteristics (Ta = 25C)
Parameter
Drain - Source breakdown
voltage
Symbol
V(BR)DSS
Conditions
Values
Unit
Min.
Typ.
Max.
400
-
-
V
Tj = 25C
-
0.1
1
A
Tj = 150°C
-
0.5
-
VGS = 0V, ID = 1mA
VDS = 400V, VGS = 0V
Zero gate voltage
drain current
IDSS
Gate - Source leakage current
IGSS+
VGS = +22V, VDS = 0V
-
-
100
nA
Gate - Source leakage current
IGSS-
VGS = -6V, VDS = 0V
-
-
-100
nA
1.6
-
4.0
V
Tj = 25C
-
120
156
m
Tj = 100°C
-
137
-
f = 1MHz, open drain
-
14
-
Gate threshold voltage
VGS (th)
VDS = VGS, ID = 3.3mA
VGS = 18V, ID = 10A
Static drain - source
on - state resistance
Gate input resistance
RDS(on)
RG
*3

*1 Limited only by maximum temperature allowed.
*2 PW  10s, Duty cycle  1%
*3 Pulsed
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2/9
2013.12 - Rev.A
Data Sheet
SCTMU001F
Electrical characteristics (Ta = 25C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Transconductance
gfs *3
VDS = 10V, ID = 10A
-
2.7
-
Input capacitance
Ciss
VGS = 0V
-
1218
-
Output capacitance
Coss
VDS = 200V
-
102
-
Reverse transfer capacitance
Crss
f = 1MHz
-
14
-
VDD = 300V, ID = 5A
-
22
-
VGS = 18V/0V
-
23
-
RL = 60
-
67
-
RG = 0
-
30
-
Turn - on delay time
Rise time
tr
Turn - off delay time
*3
td(on)
*3
*3
td(off)
tf *3
Fall time
Unit
S
pF
ns
Gate Charge characteristics (Ta = 25C)
Parameter
Symbol
Total gate charge
Qg *3
Gate - Source charge
Qgs
*3
Gate - Drain charge
Qgd
*3
Conditions
Values
Min.
Typ.
Max.
VDD = 200V
-
59
-
ID = 5A
-
13
-
VGS = 18V
-
18
-
Unit
nC
Body diode electrical characteristics (Source-Drain) (Ta = 25C)
Parameter
Symbol
Inverse diode continuous,
forward current
IS *1
Inverse diode direct current,
pulsed
Forward voltage
ISM *2
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
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VSD *3
trr
Conditions
Qrr
Irrm
*3
Unit
Min.
Typ.
Max.
-
-
20
A
-
-
60
A
-
4.3
-
V
-
29
-
ns
-
53
-
nC
-
3.1
-
A
Tc = 25C
VGS = 0V, IS = 10A
*3
*3
Values
IF = 10A, VR = 400V
di/dt = 165A/s
3/9
2013.12 - Rev.A
Data Sheet
SCTMU001F
Electrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
140
1000
Operation in this
area is limited by RDS(ON)
100
100
Drain Current : ID [A]
Power Dissipation : PD [W]
120
80
60
40
PW =100s
PW = 1ms
PW = 10ms
PW =100ms
10
1
Ta = 25ºC
Single Pulse
20
0.1
0
0
50
100
150
200
1
10
100
1000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Transient Thermal Resistance : Rth [K/W]
Fig.3 Typical Transient Thermal
Resistance vs. Pulse Width
1
0.1
Ta = 25ºC
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width : PW [s]
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4/9
2013.12 - Rev.A
Data Sheet
SCTMU001F
Electrical characteristic curves
Fig.4 Typical Output Characteristics
Fig.5 Tj = 150°C Typical Output
Characteristics
20
20
VGS= 18V
VGS= 16V
VGS= 14V
18
VGS = 18V
VGS = 16V
VGS = 14V
VGS = 12V
18
16
14
14
12
Drain Current : ID [A]
Drain Current : ID [A]
16
Ta = 25ºC
Pulsed
12
VGS= 12V
VGS= 10V
VGS= 8V
VGS= 6V
10
8
VGS = 10V
VGS = 8V
VGS = 6V
VGS = 4V
10
6
4
2
8
6
4
2
0
0
2
4
6
8
10
12
14
0
6V
16
0
2
4
6
8
10
12
14
16
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.7 Gate Threshold Voltage
vs. Junction Temperature
Fig.6 Typical Transfer Characteristics
10
4
Gate Threshold Voltage : V GS(th) [V]
VDS = 10V
Pulsed
1
Drain Current : ID [A]
Ta = 150ºC
Pulsed
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.1
0.01
0.001
0
2
4
6
8
10
3
2.5
2
1.5
1
0.5
0
-50
0
50
100
150
Junction Temperature : Tj [°C]
Gate - Source Voltage : VGS [V]
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VDS = 10V
ID = 3mA
3.5
5/9
2013.12 - Rev.A
Data Sheet
SCTMU001F
Electrical characteristic curves
0.5
Ta = 25ºC
Pulsed
0.4
Fig.9 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
Fig.8 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.3
VGS = 18V
Pulsed
0.25
0.3
0.2
ID = 20A
0.15
0.2
ID = 10A
0.1
0.1
ID = 10A
0.05
0
6
8
10
12
14
16
18
20
0
-50
22
Gate - Source Voltage : VGS [V]
100
150
Fig.11 Transconductance vs. Drain Curren
1
10
VGS = 18V
Pulsed
VDS = 10V
Pulsed
Transconductance : gfs [S]
Static Drain - Source On-State Resistance
: RDS(on) [Ω]
50
Junction Temperature : Tj [ºC]
Fig.10 Static Drain - Source On - State
Resistance vs. Drain Current
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
0.1
0.1
0
1
10
100
Drain Current : ID [A]
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Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.1
1
10
Drain Current : ID [A]
6/9
2013.12 - Rev.A
Data Sheet
SCTMU001F
Electrical characteristic curves
Fig.12 Typical Capacitance
vs. Drain - Source Voltage
Fig.13 Dynamic Input Characteristics
20
Gate - Source Voltage : VGS [V]
Capacitance : C [pF]
10000
Ciss
1000
Coss
100
Ta = 25ºC
f = 1MHz
VGS = 0V
Crss
10
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Ta = 25ºC
VDD =200V
ID = 5A
Pulsed
15
10
5
0
0
10
20
30
40
50
60
Total Gate Charge : Qg [nC]
Fig.14 Switching Characteristics
1000
Ta = 25ºC
VDD = 300V
VGS = 18V
RG = 0Ω
Pulsed
Switching Time : t [ns]
tf
100
td(off)
td(on)
tr
10
0.1
1
10
100
Drain Current : ID [A]
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7/9
2013.12 - Rev.A
Data Sheet
SCTMU001F
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
VGS
Fig.1-2　Switching Waveforms
Pulse width
ID
VDS
RL
D.U.T.
50%
10%
VDD
RG
90%
50%
10%
VGS
VDS
10%
90%
td(on)
ton
Fig.2-1 Gate Charge Measurement Circuit
VGS
tf
toff
Fig.2-2 Gate Charge Waveform
VG
ID
VDS
Qg
RL
IG(Const.)
90%
td(off)
tr
VGS
D.U.T.
Qgs
VDD
Qgd
Charge
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© 2013 ROHM Co., Ltd. All rights reserved.
8/9
2013.12 - Rev.A
Data Sheet
SCTMU001F
Dimensions (Unit : mm)
TO-220AB
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9/9
2013.12 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
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equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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non-compliance with any applicable laws or regulations.
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R1102A