Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date : 2016.08.10
Page No. : 1/8
CYStech Electronics Corp.
N -Channel Logic Level Enhancement Mode Power MOSFET
MTBA5N10J3
BVDSS
ID@ TC=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=10A
RDS(ON)@VGS=4.5V, ID=10A
100V
10A
150mΩ(max)
160mΩ(max)
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating & Halogen-free package
Equivalent Circuit
Outline
MTBA5N10J3
TO-252(DPAK)
G
G：Gate D：Drain
S：Source
D S
Ordering Information
Device
MTBA5N10J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBA5N10J3
CYStek Product Specification
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date : 2016.08.10
Page No. : 2/8
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.15mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
Symbol
Limits
VDS
VGS
100
±30
10
7
20
12
7.2
3.6
35
15
-55~+150
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
3.6
62.5
Unit
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON)
*1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr
*1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
MTBA5N10J3
Min.
Typ.
Max.
100
1
-
1.8
130
140
8
3
±100
1
25
150
160
-
-
18.8
4.7
5.8
11
4.5
32
10
1197
31
20
-
Unit
V
nA
μA
mΩ
S
Test Conditions
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
VGS=±30V, VDS=0V
VDS =100V, VGS =0V
VDS =80V, VGS =0V, TJ=125°C
VGS =10V, ID=10A
VGS =4.5V, ID=10A
VDS =5V, ID=10A
nC
ID=10A, VDS=80V, VGS=10V
ns
VDS=50V, ID=1A, VGS=10V,
RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Rg
Source-Drain Diode
IS *1
ISM *3
VSD *1
trr
Qrr
-
2
-
-
120
520
10
20
1.3
-
Ω
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date : 2016.08.10
Page No. : 3/8
VGS=15mV, VDS=0V, f=1MHz
A
V
ns
nC
IF=IS, VGS=0V
IF=10A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTBA5N10J3
CYStek Product Specification
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date : 2016.08.10
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
130
4V, 5V,6V,7V,8V,9V,10V
25
ID, Drain Current(A)
BVDSS, Drain-Source Breakdown
Voltage(V)
30
20
15
10
VGS=3V
125
120
115
110
ID=250μA,
VGS=0V
105
5
VGS=2V
100
-100
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
10
Static Drain-Source On-State resistance vs Drain Current
0
50
100
150
Tj, Junction Temperature(°C)
200
Reverse Drain Current vs Source-Drain Voltage
1000
VSD, Source-Drain Voltage(V)
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
1.2
VGS=10V
VGS=4.5V
VGS=2.5V
VGS=3V
100
0.001
Tj=25°C
1
0.8
Tj=150°C
0.6
0.4
0.2
0.01
0.1
1
ID, Drain Current(A)
10
100
0
R DS(ON), Static Drain-Source On-State
Resistance(mΩ)
500
450
4
8
12
16
IDR , Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
R DS(ON), Static Drain-Source OnState Resistance(mΩ)
-50
ID=10A
400
350
300
250
200
150
350
300
250
VGS=10V, ID=10A
200
150
VGS=-4.5V, ID=-10A
100
50
100
0
MTBA5N10J3
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date : 2016.08.10
Page No. : 5/8
Typical Characteristics(Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
VGS(th), Normalized Threshold Voltage
10000
Capacitance---(pF)
Ciss
1000
100
C oss
Crss
1.4
ID=250μA
1.2
1
0.8
0.6
0.4
10
0.1
1
10
VDS, Drain-Source Voltage(V)
-60
100
-20
100
140
Gate Charge Characteristics
10
10
VGS, Gate-Source Voltage(V)
GFS, Forward Transfer Admittance(S)
60
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
1
0.1
VDS=10V
Pulsed
Ta=25°C
0.01
0.001
VDS=80V
ID=10A
8
6
4
2
0
0.01
0.1
1
ID, Drain Current(A)
0
10
4
8
12
16
Total Gate Charge---Qg(nC)
20
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
12
RDS(ON)
Limit
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
20
10μs
10
100μs
1ms
1
10ms
TC=25°C, Tj=150°, VGS=10V
RθJC=3.6°C/W, Single Pulse
100ms
DC
10
8
6
4
2
0
0.1
1
MTBA5N10J3
10
100
VDS, Drain-Source Voltage(V)
1000
25
50
75
100
125
TC, Case Temperature(°C)
150
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date : 2016.08.10
Page No. : 6/8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
30
VDS=10V
ID, Drain Current (A)
25
20
15
10
5
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
10
12
Transient Thermal Response Curves
10
ZθJC(t), Thermal Response
D=0.5
1
0.2
1.ZθJC(t)=3.6 °C/W max.
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*ZθJC(t)
0.1
0.05
0.02
0.1
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTBA5N10J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date : 2016.08.10
Page No. : 7/8
Reel Dimension
Carrier Tape Dimension
MTBA5N10J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date : 2016.08.10
Page No. : 8/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
Pb-free devices
260 +0/-5 °C
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Sn-Pb eutectic Assembly
Average ramp-up rate
3°C/second max.
(Tsmax to Tp)
Preheat
100°C
−Temperature Min(TS min)
−Temperature Max(TS max)
150°C
−Time(ts min to ts max)
60-120 seconds
Time maintained above:
−Temperature (TL)
183°C
− Time (tL)
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
Time within 5°C of actual peak
10-30 seconds
temperature(tp)
Ramp down rate
6°C/second max.
6 minutes max.
Time 25 °C to peak temperature
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5 °C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTBA5N10J3
CYStek Product Specification
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date : 2016.08.10
Page No. : 9/8
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
BA5
N10
Date
Code
□□□□
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.039
0.048
0.026
0.034
0.026
0.034
0.018
0.023
0.018
0.023
0.256
0.264
0.201
0.215
0.236
0.244
DIM
A
A1
B
b
b1
C
C1
D
D1
E
Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.990
1.210
0.660
0.860
0.660
0.860
0.460
0.580
0.460
0.580
6.500
6.700
5.100
5.460
6.000
6.200
2
3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
DIM
e
e1
H
K
L
L1
L2
L3
P
V
Inches
Min.
Max.
0.086
0.094
0.172
0.188
0.163 REF
0.190 REF
0.386
0.409
0.114 REF
0.055
0.067
0.024
0.039
0.026 REF
0.211 REF
Millimeters
Min.
Max.
2.186
2.386
4.372
4.772
4.140 REF
4.830 REF
9.800
10.400
2.900 REF
1.400
1.700
0.600
1.000
0.650 REF
5.350 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTBA5N10J3
CYStek Product Specification