AO4704
N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
Features
The AO4704 uses advanced trench technology to
provide excellent RDS(ON), shoot-through immunity and
body diode characteristics.This device is suitable for
use as a synchronous switch in PWM applications.
The co-packaged Schottky Diode boosts efficiency
further. AO4704 is Pb-free (meets ROHS & Sony
259 specifications).
VDS (V) = 30V
ID = 13 A
RDS(ON) < 11.5mΩ (VGS = 10V)
RDS(ON) < 13mΩ (VGS = 4.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF<0.5V@1A
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SOIC-8
S/A
S/A
S/A
G
1
2
3
4
8
7
6
5
D/K
D/K
D/K
D/K
Pulsed Diode Forward Current
Power Dissipation
Avalanche Current B
K
S
A
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
MOSFET
V
DS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
±12
TA=25°C
13
ID
AF
Continuous Drain Current
TA=70°C
10.4
IDM
Pulsed Drain Current B
40
V
Schottky reverse voltage
KA
TA=25°C
TA=70°C
Continuous Forward CurrentAF
D
IF
B
IFM
TA=25°C
TA=70°C
B
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
PD
IAR
EAR
TJ, TSTG
3.1
2
20
60
-55 to 150
Schottky
Units
V
V
A
30
4.4
3.2
30
3.1
2
V
A
W
A
mJ
-55 to 150
°C
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AO4704
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Thermal Characteristics: Schottky
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
C
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Symbol
RθJA
RθJL
Typ
28
54
21
Max
40
75
30
Units
°C/W
°C/W
°C/W
Typ
36
67
25
Max
40
75
30
Units
°C/W
°C/W
°C/W
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop,
capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 6 : Dec 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4704
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
30
Typ
Max
VR=30V
VR=30V, TJ=125°C
0.007
0.05
3.2
10
mA
VR=30V, TJ=150°C
12
20
100
nA
1.1
2
V
9.1
11.5
13.3
16.5
10.5
13
IDSS
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.6
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
40
VGS=10V, ID=13A
RDS(ON)
Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=12.2A
gFS
Forward Transconductance
VSD
Diode + Schottky Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode + Schottky Continuous Current
IS
VDS=5V, ID=13A
30
Coss
Output Capacitance (FET+Schottky)
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V
A
37
3656
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
VGS=10V, VDS=15V, ID=13A
Ω
30.5
36
8.6
Turn-On DelayTime
6.2
tf
trr
Turn-Off Fall Time
Body Diode+Schottky Reverse Recovery Time
IF=13A, dI/dt=100A/µs
Qrr
Body Diode+Schottky Reverse Recovery Charge
IF=13A, dI/dt=100A/µs
pF
pF
Gate Drain Charge
VGS=10V, VDS=15V, RL=1.1Ω,
RGEN=0Ω
pF
1.1
tD(on)
Turn-On Rise Time
4050
235
Qgd
Turn-Off DelayTime
A
168
Gate Source Charge
tD(off)
V
5
0.86
Qgs
tr
mΩ
0.5
322
0.4
mΩ
S
0.45
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Units
4.6
nC
nC
nC
9
ns
4.8
7
ns
55
75
ns
7.3
11
ns
20.3
25
8.4
12.5
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop,
capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Rev 6 : Dec 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
30
10V
VGS=5V
VGS =3V
50
25
VGS =2.5V
20
ID(A)
ID(A)
40
30
20
125°C
15
10
VGS =2.0V
25°C
10
5
0
0
0
1
2
3
4
5
0.0
0.5
VDS(Volts)
1.5
2.0
2.5
3.0
VGS(Volts)
Figure 2: Transfer Characteristics
Figure 1: On-Regions Characteristics
1.8
13
ID=13A
Normalize ON-Resistance
12
RDS(ON)(mΩ)
1.0
VGS =4.5V
11
10
9
VGS =10V
8
1.6
VGS=4.5V
1.4
VGS=10V
1.2
1.0
7
0
5
10
15
20
25
30
0.8
0
ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
30
1E+01
ID=13A
25
1E+00
125°C
20
125°C
IS(A)
RDS(ON)(mΩ)
25
15
10
1E-01
25°C
1E-02
25°C
FET+SCHOTTKY
5
1E-03
0.0
0
0
2
4
6
8
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.2
0.4
0.6
0.8
1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
(Note F)
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AO4704
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
10000
VDS=15V
ID=13A
Ciss
Capacitance (pF)
VGS(Volts)
4
3
2
1000
Coss FET+SCHOTTKY
1
Crss
100
0
0
10
20
30
0
40
100
ID(A)
0.1s
1s
1
1ms
Power (W)
10ms
10s
T J(Max) =150°C
T A =25°C
1
ZθJA Normalized Transient
Thermal Resistance
25
30
30
20
10
100
0
0.01
VDS(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note E)
10
20
10
DC
0.1
0.1
15
40
100µs
10
10
50
10µs
RDS(ON)
limited
5
VDS(Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=40°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
T on
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (S)
Figure 11: Normalized Maximum Transient Thermal Impedence
Alpha & Omega Semiconductor, Ltd.
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