Low Cost, General-Purpose
High Speed JFET Amplifier
AD825
APPLICATIONS
CCDs
Low distortion filters
Mixed gain stages
Audio amplifiers
Photo detector interfaces
ADC input buffers
DAC output buffers
NC 1
NC
8
AD825
–IN 2
+VS
TOP VIEW
6 OUTPUT
(Not to Scale)
–VS 4
5 NC
7
+IN 3
NC = NO CONNECT
00876-E-001
High speed
41 MHz, −3 dB bandwidth
125 V/µs slew rate
80 ns settling time
Input bias current of 20 pA and noise current of 10 fA/√Hz
Input voltage noise of 12 nV/√Hz
Fully specified power supplies: ±5 V to ±15 V
Low distortion: −76 dB at 1 MHz
High output drive capability
Drives unlimited capacitance load
50 mA min output current
No phase reversal when input is at rail
Available in 8-lead SOIC
CONNECTION DIAGRAMS
Figure 1. 8-Lead Plastic SOIC (R) Package
NC 1
16 NC
NC 2
15 NC
NC 3
–INPUT 4
14 NC
AD825
13 +VS
TOP VIEW
+INPUT 5 (Not to Scale) 12 OUTPUT
11 NC
–VS 6
NC 7
10 NC
NC 8
9
00876-E-002
FEATURES
NC
NC = NO CONNECT
Figure 2. 16-Lead Plastic SOIC (R-16) Package
GENERAL DESCRIPTION
The unique input stage has ultralow input bias current and
input current noise. Signals that go to either rail on this high
performance input do not cause phase reversals at the output.
These features make the AD825 a good choice as a buffer for
MUX outputs, creating minimal offset and gain errors.
The AD825 is fully specified for operation with dual ±5 V and
±15 V supplies. This power supply flexibility, and the low supply
current of 6.5 mA with excellent ac characteristics under all
supply conditions, makes the AD825 well-suited for many
demanding applications.
10V
200ns
10V
00876-E-003
The AD825 is a superbly optimized operational amplifier for
high speed, low cost, and dc parameters, making it ideally suited
for a broad range of signal conditioning and data acquisition
applications. The ac performance, gain, bandwidth, slew rate,
and drive capability are all very stable over temperature. The
AD825 also maintains stable gain under varying load
conditions.
Figure 3. Performance with Rail-to-Rail Input Signals
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.326.8703
© 2004 Analog Devices, Inc. All rights reserved.
AD825
TABLE OF CONTENTS
Specifications..................................................................................... 3
REVISION HISTORY
Absolute Maximum Ratings............................................................ 5
10/04—Data Sheet Changed from Rev. E to Rev. F
Changes to Figure 1......................................................................... 1
Changes to Figure 4......................................................................... 5
Changes to Figure 21....................................................................... 8
Pin Configurations ........................................................................... 5
ESD Caution.................................................................................. 5
Typical Performance Characteristics ............................................. 6
Driving Capacitive Loads .............................................................. 10
Theory of Operation ...................................................................... 10
Input Consideration................................................................... 10
Grounding and Bypassing ......................................................... 10
Second-Order Low-Pass Filter.................................................. 11
Outline Dimensions ....................................................................... 12
Ordering Guide........................................................................... 12
3/04—Data Sheet Changed from Rev. D to Rev. E
Changes to Specifications............................................................... 3
Addition of 16-Lead SOIC Pin Configuration ............................ 5
Changes to Figure 27....................................................................... 9
Updated Outline Dimensions...................................................... 12
Updated Ordering Guide.............................................................. 12
2/01—Data Sheet Changed from Rev. C to Rev. D
Addition of 16-lead SOIC package (R-16)
Connection Diagram ...................................................................... 4
Addition to Absolute Maximum Ratings ..................................... 4
Addition to Ordering Guide (R-16).............................................. 4
Addition of 16-lead SOIC package (R-16)
Outline Dimensions ...................................................................... 11
Rev. F | Page 2 of 12
AD825
SPECIFICATIONS
All limits are determined to be at least four standard deviations away from mean value. At TA = 25°C, VS = ±15 V, unless otherwise noted.
Table 1.
Parameter
DYNAMIC PERFORMANCE
Unity Gain Bandwidth
Bandwidth for 0.1 dB Flatness
−3 dB Bandwidth
Slew Rate
Settling Time to 0.1%
to 0.1%
Total Harmonic Distortion
Differential Gain Error
(RLOAD = 150 Ω)
Differential Phase Error
(RLOAD = 150 Ω)
INPUT OFFSET VOLTAGE
Conditions
Gain = +1
Gain = +1
RLOAD = 1 kΩ, G = +1
0 V to 10 V Step, AV = −1
0 V to 10 V Step, AV = −1
FC = 1 MHz, G = −1
NTSC
Gain = +2
NTSC
Gain = +2
VS
Min
±15 V
±15 V
±15 V
±15 V
±15 V
±15 V
±15 V
±15 V
23
18
44
125
AD825A
Typ
26
21
46
140
150
180
−77
1.3
2.1
±15 V
1
±15 V
10
15
40
20
700
30
TMIN
TMAX
±15 V
COMMON-MODE REJECTION
INPUT VOLTAGE NOISE
TMIN
TMAX
VOUT = ±10 V
RLOAD = 1 kΩ
VOUT = ±7.5 V
RLOAD = 1 kΩ
VOUT = ±7.5 V
RLOAD = 150 kΩ (50 mA Output)
VCM = ±10
f = 10 kHz
±15 V
±15 V
INPUT CURRENT NOISE
f = 10 kHz
±15 V
INPUT COMMON-MODE VOLTAGE RANGE
OUTPUT VOLTAGE SWING
Output Current
Short-Circuit Current
INPUT RESISTANCE
INPUT CAPACITANCE
OUTPUT RESISTANCE
POWER SUPPLY
Quiescent Current
RLOAD = 1 kΩ
RLOAD = 500 Ω
2
5
5
Rev. F | Page 3 of 12
MHz
MHz
MHz
V/µs
ns
ns
dB
%
440
mV
mV
µV/°C
pA
pA
pA
pA
pA
pA
±15 V
70
76
dB
70
76
dB
68
71
74
80
12
dB
dB
±15 V
±15 V
±15 V
±15 V
±15 V
±15 V
±15 V
Open Loop
TMIN to TMAX
Unit
Degrees
5
INPUT OFFSET CURRENT
OPEN-LOOP GAIN
180
220
±15 V
TMIN to TMAX
Offset Drift
INPUT BIAS CURRENT
Max
±15 V
±15 V
nV/√Hz
fA/√Hz
10
13
12.9
50
±13.5
±13.3
±13.2
V
V
V
mA
mA
Ω
pF
Ω
100
5 ×1011
6
8
6.5
7.2
7.5
mA
mA
AD825
All limits are determined to be at least four standard deviations away from mean value. At TA = 25°C, VS = ±5 V unless otherwise noted.
Table 2.
Parameter
DYNAMIC PERFORMANCE
Unity Gain Bandwidth
Bandwidth for 0.1 dB Flatness
−3 dB Bandwidth
Slew Rate
Settling Time to 0.1%
to 0.01%
Total Harmonic Distortion
Differential Gain Error
(RLOAD = 150 Ω)
Differential Phase Error
(RLOAD = 150 Ω)
INPUT OFFSET VOLTAGE
Conditions
Gain = +1
Gain = +1
RLOAD = 1 kΩ, G = −1
−2.5 V to +2.5 V
−2.5 V to +2.5 V
FC = 1 MHz, G = −1
NTSC
Gain = +2
NTSC
Gain = +2
VS
Min
±5 V
±5 V
±5 V
±5 V
±5 V
±5 V
±5 V
±5 V
18
8
34
115
AD825A
Typ
21
10
37
130
75
90
−76
1.2
1.4
±5 V
1
±5 V
10
10
30
15
600
25
TMIN
TMAX
INPUT OFFSET CURRENT
±5 V
COMMON-MODE REJECTION
INPUT VOLTAGE NOISE
±5 V
±5 V
INPUT CURRENT NOISE
f = 10 kHz
±5 V
INPUT COMMON-MODE VOLTAGE RANGE
OUTPUT VOLTAGE SWING
Output Current
Short-Circuit Current
INPUT RESISTANCE
INPUT CAPACITANCE
OUTPUT RESISTANCE
POWER SUPPLY
Quiescent Current
POWER SUPPLY REJECTION
Rev. F | Page 4 of 12
MHz
MHz
MHz
V/µs
ns
ns
dB
%
280
mV
mV
µV/°C
pA
pA
pA
pA
pA
pA
±5 V
64
64
69
±5 V
±5 V
66
66
80
12
dB
dB
dB
nV/√Hz
fA/√Hz
10
+3.2
+3.1
50
± 3.5
±3.4
±3.2
V
V
V
mA
mA
Ω
pF
Ω
80
5 ×1011
6
8
Open Loop
TMIN to TMAX
VS = ±5 V to ±15 V
2
5
5
±5 V
RLOAD = 500 Ω
RLOAD = 150 Ω
Unit
Degrees
5
TMIN
TMAX
VOUT = ±2.5
RLOAD = 500 Ω
RLOAD = 150 Ω
VCM = ±2 V
f = 10 kHz
Offset Current Drift
OPEN-LOOP GAIN
90
110
±5 V
TMIN to TMAX
Offset Drift
INPUT BIAS CURRENT
Max
±5 V
±5 V
6.2
76
88
6.8
7.5
mA
mA
dB
AD825
ABSOLUTE MAXIMUM RATINGS
PIN CONFIGURATIONS
Table 3.
NC 1
Rating
±18 V
NC
8
AD825
–IN 2
+VS
TOP VIEW
6 OUTPUT
(Not to Scale)
–VS 4
5 NC
7
See Figure 6
±VS
±VS
See Figure 6
−65°C to +125°C
−40°C to +85°C
300°C
NC = NO CONNECT
00876-E-001
+IN 3
Figure 4. 8-Lead SOIC
NC 1
16
NC
NC 2
15
NC
NC 3
14
NC
–INPUT 4
AD825
+VS
TOP VIEW
+INPUT 5 (Not to Scale) 12 OUTPUT
11 NC
–VS 6
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
13
NC 7
10
NC
NC 8
9
NC
NC = NO CONNECT
00876-E-002
Parameter
Supply Voltage
Internal Power Dissipation1
Small Outline (R)
Input Voltage (Common Mode)
Differential Input Voltage
Output Short-Circuit Duration
Storage Temperature Range (R, R-16)
Operating Temperature Range
Lead Temperature Range
(Soldering 10 sec)
Figure 5. 16-Lead SOIC
Specification is for device in free air:
8-lead SOIC package: θJA = 155°C/W
16-lead SOIC package: θJA = 85°C/W
TJ = 150°C
2.0
16-LEAD SOIC PACKAGE
1.5
1.0
0.5
8-LEAD SOIC PACKAGE
0
–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90
AMBIENT TEMPERATURE (°C)
Figure 6. Maximum Power Dissipation vs. Temperature
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. F | Page 5 of 12
00876-E-004
1
MAXIMUM POWER DISSIPATION (W)
2.5
AD825
TYPICAL PERFORMANCE CHARACTERISTICS
100
20
15
5
RL = 150Ω
10
OUTPUT IMPEDANCE (Ω)
OUTPUT SWING (V)
10
RL = 1kΩ
0
–5
–10
1
0.1
4
2
6
8
10
12
SUPPLY VOLTAGE (V)
14
16
18
0.01
100
10M
80
35
15
BANDWIDTH
30
UNITY GAIN BANDWIDTH (MHz)
10
VS = ±15V
5
VS = ±5V
0
–5
VS = ±15V
–10
25
60
20
PHASE MARGIN
15
40
10
0
100
200
300 400 500 600 700
LOAD RESISTANCE (Ω)
800
900
1000
00876-E-006
5
0
–60
–40
–20
0
60
20
40
80
TEMPERATURE (°C)
100
120
00876-E-009
OUTPUT SWING (V)
1M
Figure 10. Closed-Loop Output Impedance vs. Frequency
Figure 7. Output Voltage Swing vs. Supply Voltage
–15
10k
100k
FREQUENCY (Hz)
1k
00876-E-008
0
PHASE MARGIN (°C)
–20
00876-E-005
–15
20
140
Figure 11. Unity Gain Bandwidth and Phase Margin vs. Temperature
Figure 8. Output Voltage Swing vs. Load Resistance
80
7.0
180
VS = ±15V
OPEN-LOOP GAIN (dB)
+85°
6.0
VS = ±5V
60
90
50
45
40
0
30
20
5.5
5.0
0
2
4
6
8
10
12
14
SUPPLY VOLTAGE (±V)
16
18
20
0
1k
10k
100k
1M
FREQUENCY (Hz)
10M
100M
Figure 12. Open-Loop Gain and Phase Margin vs. Frequency
Figure 9. Quiescent Supply Current vs. Supply Voltage
for Various Temperatures
Rev. F | Page 6 of 12
00876-E-010
10
00876-E-007
SUPPLY CURRENT (mA)
6.5
OPEN-LOOP PHASE (Degrees)
135
70
–40°
+25°
AD825
30
80
OPEN-LOOP GAIN (dB)
75
VS = ±15V
70
VS = ±5V
60
10
1k
10k
LOAD RESISTANCE (Ω)
00876-E-011
65
20
RL = 150Ω
10
0
10k
100k
1M
FREQUENCY (Hz)
00876-E-014
OUTPUT VOLTAGE (V p-p)
RL = 1kΩ
10M
Figure 16. Large Signal Frequency Response; G = +2
Figure 13. Open-Loop Gain vs. Load Resistance
10
200
0
180
160
–10
–PSRR
–30
+PSRR
–40
–50
–60
140
0.01%
100
0.1%
60
–80
20
100k
1M
FREQUENCY (Hz)
10M
00876-E-012
40
10k
0.1%
80
–70
–90
0.01%
120
0
10
8
6
4
2
0
–2
–4
OUTPUT SWING (0 to ±V)
–6
–8
–10
00876-E-015
SETTLING TIME (ns)
PSR (dB)
–20
Figure 17. Output Swing and Error vs. Settling Time
Figure 14. Power Supply Rejection vs. Frequency
130
–50
120
–55
110
–60
DISTORTION (dB)
100
90
80
VS = ±5V
70
60
SECOND
–65
THIRD
–70
–75
50
–80
30
10
100
1k
10k
100k
FREQUENCY (Hz)
1M
10M
–85
100k
Figure 15. Common-Mode Rejection vs. Frequency
1M
FREQUENCY (Hz)
Figure 18. Harmonic Distortion vs. Frequency
Rev. F | Page 7 of 12
10M
00876-E-016
40
00876-E-013
CMR (dB)
VS = ±15V
AD825
+VS
160
10µF
±15V
0.01µF
±5V
120
2
7
HP PULSE (LS)
AD825
VIN
OR
3
4
FUNCTION (SS)
GENERATOR
50Ω
100
80
–VS
6
VOUT
TEKTRONIX
P6204 FET
PROBE
TEKTRONIX
7A24
PREAMP
0.01µF
00876-E-020
SLEW RATE (V/µs)
140
RL
10µF
60
Figure 22. Noninverting Amplifier Connection
40
0
–60
–40
–20
60
20
40
80
TEMPERATURE (°C)
0
100
120
00876-E-017
20
140
Figure 19. Slew Rate vs. Temperature
2
5V
1
100ns
0
–2
–3
–4
VOUT
VIN
–5
VS
–6
±5V 10MHz
±15V 21MHz
0.1dB FLATNESS
–7
00876-E-021
GAIN (dB)
–1
10k
100k
1M
10M
FREQUENCY (Hz)
00876-E-018
5V
–8
1k
Figure 23. Noninverting Large Signal Pulse Response, RL = 1 kΩ
Figure 20. Closed-Loop Gain vs. Frequency, Gain = +1
2
200mV
50ns
1
0
–2
–3
VIN
1kΩ
1kΩ
–4
VOUT
–5
VS
–7
±5V 7.7MHz
±15V 9.8MHz
–8
1k
10k
200mV
100k
1M
FREQUENCY (Hz)
10M
00876-E-022
0.1dB FLATNESS
–6
00876-E-019
GAIN (dB)
–1
Figure 24. Noninverting Small Signal Pulse Response, RL = 1 kΩ
Figure 21. Closed-Loop Gain vs. Frequency, Gain = −1
Rev. F | Page 8 of 12
AD825
00876-E-023
5V
5V
Figure 25. Noninverting Large Signal Pulse Response, RL = 150 Ω
Figure 28. Inverting Large Signal Pulse Response, RL = 1 kΩ
50ns
200mV
00876-E-024
200mV
200mV
200mV
Figure 26. Noninverting Small Signal Pulse Response, RL = 150 Ω
Figure 29. Inverting Small Signal Pulse Response, RL = 1 kΩ
1kΩ
+VS
10µF
0.01µF
HP PULSE VIN
GENERATOR
RIN
1kΩ
7
2
AD825
6
3
VOUT
TEKTRONIX
P6204 FET
PROBE
TEKTRONIX
7A24
PREAMP
0.01µF
–VS
RL
10µF
00876-E-025
4
50Ω
50ns
Figure 27. Inverting Amplifier Connection
Rev. F | Page 9 of 12
00876-E-027
5V
100ns
00876-E-026
100ns
5V
AD825
DRIVING CAPACITIVE LOADS
VPOS
The internal compensation of the AD825, together with its high
output current drive, permits excellent large signal performance
while driving extremely high capacitive loads.
NEG
1kΩ
+VS
POS
10µF
0.01µF
HP PULSE VIN
GENERATOR
RIN
1kΩ
CF
7
2
AD825
6
3
VOUT
TEKTRONIX
P6204 FET
PROBE
VOUT
TEKTRONIX
7A24
PREAMP
–VS
CL
00876-E-028
0.01µF
50Ω
10µF
VNEG
Figure 30. Inverting Amplifier Driving a Capacitive Load
00876-E-030
4
Figure 32. Simplified Schematic
5V
500ns
The capacitor, CF, in the output stage, enables the AD825 to
drive heavy capacitive loads. For light loads, the gain of the
output buffer is close to unity, CF is bootstrapped, and not much
happens. As the capacitive load is increased, the gain of the
output buffer is decreased and the bandwidth of the amplifier is
reduced through a portion of CF adding to the dominant pole.
As the capacitive load is further increased, the amplifier’s
bandwidth continues to drop, maintaining the stability of the
AD825.
OUTPUT
5V
00876-E-029
INPUT
Figure 31. Inverting Amplifier Pulse Response
While Driving a 400 pF Capacitive Load
THEORY OF OPERATION
INPUT CONSIDERATION
The AD825 with its unique input stage ensures no phase
reversal for signals as large as or even larger than the supply
voltages. Also, layout considerations of the input transistors
ensure functionality even with a large differential signal.
The AD825 is a low cost, wideband, high performance FET
input operational amplifier. With its unique input stage design,
the AD825 ensures no phase reversal, even for inputs that
exceed the power supply voltages, and its output stage is
designed to drive heavy capacitive or resistive loads with small
changes relative to no load conditions.
The need for a low noise input stage calls for a larger FET
transistor. One should consider the additional capacitance that
is added to ensure stability. When filters are designed with the
AD825, one needs to consider the input capacitance (5 pF to
6 pF) of the AD825 as part of the passive network.
The AD825 (Figure 32) consists of common-drain, commonbase FET input stage driving a cascoded, common-base
matched NPN gain stage. The output buffer stage uses emitter
followers in a Class AB amplifier that can deliver large current
to the load while maintaining low levels of distortion.
The AD825 is a low input bias current FET amplifier. Its high
frequency response makes it useful in applications, such as
photodiode interfaces, filters, and audio circuits. When
designing high frequency circuits, some special precautions are
in order. Circuits must be built with short interconnects, and
resistances should have low inductive paths to ground. Power
supply leads should be bypassed to common as close as possible
to the amplifier pins. Ceramic capacitors of 0.1 µF are
recommended.
GROUNDING AND BYPASSING
Rev. F | Page 10 of 12
AD825
SECOND-ORDER LOW-PASS FILTER
C1
24pF
A second-order Butterworth low-pass filter can be implemented
using the AD825 as shown in Figure 33. The extremely low bias
currents of the AD825 allow the use of large resistor values and,
consequently, small capacitor values without concern for
developing large offset errors. Low current noise is another
factor in permitting the use of large resistors without having to
worry about the resultant voltage noise.
VIN
R1
9.31kΩ
R2
9.31kΩ
C2
6pF
+5V
C3
0.1µF
VOUT
AD825
00876-E-031
C4
0.1µF
–5V
C1 =
1.414
2π f CUTOFF R1
0.707
C2 ( farads ) =
2π f CUTOFF R1
R1 = R2 = User Selected (Typically 10 kΩ to 100 kΩ )
Figure 33. Second-Order Butterworth Low-Pass Filter
0
HIGH FREQUENCY REJECTION (dB)
With the values shown, the corner frequency will be 1 MHz.
The equations for component selection are shown below. Note
that the noninverting input (and the inverting input) has an
input capacitance of 6 pF. As a result, the calculated value of C1
(12 pF) is reduced to 6 pF.
–10
–20
–30
–40
–50
–60
–70
A plot of the filter frequency response is shown in Figure 34;
better than 40 dB of high frequency rejection is provided.
10k
100k
1M
FREQUENCY (Hz)
10M
100M
Figure 34. Frequency Response of Second-Order Butterworth Filter
Rev. F | Page 11 of 12
00876-E-032
–80
AD825
OUTLINE DIMENSIONS
10.50 (0.4134)
10.10 (0.3976)
5.00 (0.1968)
4.80 (0.1890)
8
5
4.00 (0.1574)
3.80 (0.1497) 1
4
1.27 (0.0500)
BSC
0.25 (0.0098)
0.10 (0.0040)
9
16
7.60 (0.2992)
7.40 (0.2913)
6.20 (0.2440)
5.80 (0.2284)
1.75 (0.0688)
1.35 (0.0532)
0.51 (0.0201)
COPLANARITY
SEATING 0.31 (0.0122)
0.10
PLANE
8
1
1.27 (0.0500)
BSC
0.50 (0.0196)
× 45°
0.25 (0.0099)
0.30 (0.0118)
0.10 (0.0039)
8°
0.25 (0.0098) 0° 1.27 (0.0500)
0.40 (0.0157)
0.17 (0.0067)
COPLANARITY
0.10
0.51 (0.0201)
0.31 (0.0122)
10.65 (0.4193)
10.00 (0.3937)
2.65 (0.1043)
2.35 (0.0925)
SEATING
PLANE
0.75 (0.0295)
× 45°
0.25 (0.0098)
8°
0.33 (0.0130) 0°
0.20 (0.0079)
COMPLIANT TO JEDEC STANDARDS MS-012AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
COMPLIANT TO JEDEC STANDARDS MS-013AA
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN
Figure 35. 8-Lead Standard Small Outline Package [SOIC]
Narrow Body (R-8)
Dimensions shown in millimeters (inches)
Figure 36. 16-Lead Standard Small Outline Package [SOIC]
Wide Body (R-16)
Dimensions shown in millimeters (inches)
ORDERING GUIDE
Model
AD825AR
AD825AR-REEL
AD825AR-REEL7
AD825AR-16
AD825AR-16-REEL
AD825AR-16-REEL7
AD825ARZ-161
AD825ARZ-16-REEL1
AD825ARZ-16-REEL71
AD825ACHIPS
1
1.27 (0.0500)
0.40 (0.0157)
Temperature Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Package Description
8-Lead SOIC
8-Lead SOIC, 13" Tape and Reel
8-Lead SOIC, 7" Tape and Reel
16-Lead SOIC
16-Lead SOIC, 13" Tape and Reel
16-Lead SOIC, 7" Tape and Reel
16-Lead SOIC
16-Lead SOIC, 13" Tape and Reel
16-Lead SOIC, 7" Tape and Reel
Die
Z = Pb-free part.
© 2004 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C00876–0–10/04(F)
Rev. F | Page 12 of 12
Package Option
R-8
R-8
R-8
R-16
R-16
R-16
R-16
R-16
R-16