NJG1148MD7
5GHz BAND LOW NOISE AMPLIFIER GaAs MMIC
I GENERAL DESCRIPTION
NJG1148MD7 is a 5GHz band low noise amplifier GaAs MMIC
designed for wireless LAN, wireless image transmission and
Intelligent Transport System.
The NJG1148MD7 has a LNA pass-through function to select
high gain mode or low gain mode by low control voltage operation.
Within the wide dynamic range from 4.9~5.95GHz, the
NJG1148MD7 achieves low noise figure and high linearity with
fewer external components. The ESD protection circuits are
integrated into the MMIC. They achieve high ESD protection
voltage.
A small and ultra-thin package of EQFN14-D7 is adopted.
I PACKAGE OUTLINE
NJG1148MD7
I APPLICATIONS
5GHz Band application from 4.9GHz to 5.95GHz
Wireless LAN, wireless image transmission and Intelligent transport System applications
I FEATURES
G Operating voltage
G Low current consumption
G
G
G
G
G
G
G
3.3V
7.0mA typ. @VDD=3.3V, VCTL=1.8V (LNA mode)
5µA typ. @VDD=3.3V, VCTL=0V (Bypass mode)
12.5dB typ. @VDD=3.3V, VCTL=1.8V (LNA mode)
1.5dB typ. @VDD=3.3V, VCTL=1.8V (LNA mode)
+5.0dBm typ. @VDD=3.3V, VCTL=1.8V (LNA mode)
5.0dB typ. @VDD=3.3V, VCTL=0V (Bypass mode)
1pc (Bypass Capacitor)
EQFN14-D7 (Package size: 1.6mm x 1.6mm x 0.397mm typ.)
High Gain
Low Noise figure
High IIP3
Low Insertion Loss
Few external components
Small package size
Pb free, Halogen free
I PIN CONFIGURATION
1PIN INDEX
(Top view)
NC(GND)
NC(GND)
14
13
1
GND
12
11
Bypass
circuit
NC(GND)
NC(GND)
2
10
LNA circuit
RFIN
RFOUT
3
9
Logic
circuit
GND
4
VDD
8
NC(GND)
5
6
7
GND
GND
VCTL
I TRUTH TABLE
VCTL
H
L
Pin Connection
1. NC (GND)
2. RFIN
3. GND
4. NC (GND)
5. GND
6. GND
7. VCTL
8. NC (GND)
9. VDD
10. RFOUT
11. NC (GND)
12. GND
13. NC (GND)
14. NC (GND)
NC(GND)
“H”=VCTL(H)“L”=VCTL(L)
LNA Circuit
Bypass Circuit
ON
OFF
OFF
ON
Operating mode
LNA mode
Bypass mode
Note: Specifications and description listed in this datasheet are subject to change without notice
Ver.2014-05-22
-1-
NJG1148MD7
I ABSOLUTE MAXIMUM RATINGS
T a=+25°C, Zs=Zl=50Ω
PARAMETER
CONDITIONS
SYMBOL
RATINGS
UNITS
Drain voltage
VDD
5.0
V
Control voltage
VCTL
5.0
V
Input power
Pin
VDD=3.3V
+15
dBm
Power dissipation
PD
4-layer FR4 PCB with through-hole
(76.2x114.3mm), Tj=150°C
1300
mW
Operating temperature
Topr
-40~+85
°C
Storage temperature
Tstg
-55~+150
°C
I ELECTRICAL CHARACTERISTICS 1 (DC CHARACTERISTICS)
VDD=3.3V, T a=+25°C, Zs=Zl=50Ω
MIN
TYP
MAX
UNITS
VDD
2.7
3.3
4.5
V
Control voltage (High)
VCTL(H)
1.6
1.8
4.5
V
Control voltage (Low)
VCTL(L)
0
0
0.4
V
PARAMETERS
Operating voltage
SYMBOL
CONDITIONS
Operating current1
IDD1
RF OFF, VCTL=1.8V
-
7.0
11.0
mA
Operating current2
IDD2
RF OFF, VCTL=0V
-
5
9
µA
Control current
ICTL
RF OFF, VCTL=1.8V
-
6
10
µA
-2-
NJG1148MD7
I ELECTRICAL CHARACTERISTICS 2 (LNA mode)
VDD=3.3V, VCTL=1.8V, freq=4900~5950MHz, T a =+25°C, Zs=Zl=50Ω, with application circuit
PARAMETERS
Small signal gain
Noise figure
Input power
at 1dB gain
compression point1
Input 3rd order
intercept point1
Input Tx Power at
1dB Gain
Compression Point
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Gain
Exclude PCB
& connector losses *1
9.5
12.5
16.0
dB
NF
Exclude PCB
& connector losses *2
-
1.5
2.2
dB
-12.0
-5.0
-
dBm
0.0
+5.0
-
dBm
-17.0
-8.0
-
dBm
P-1dB
(IN)1
IIP3_1
Psat
(Tx-1dB)
f1=freq, f2=freq+100kHz,
PIN=-25dBm
Fundamental frequency:
f1=5500MHz, Pin=-30dBm
Tx frequency:
f2=1710MHz, 1940MHz,
2170MHz
Input Tx Power at 1dB
fundamental Gain
compression point
Isolation
ISL
-
35.0
-
dB
RF IN Return loss1
RLi1
8.0
12.0
-
dB
RF OUT Return loss1
RLo1
5.0
12.0
-
dB
*1 Input & output PCB and connector losses: 0.58dB (5500MHz)
*2 Input PCB and connector losses: 0.29dB (5500MHz)
I ELECTRICAL CHARACTERISTICS 3 (Bypass mode)
VDD=3.3V, VCTL=0V, freq=4900~5950MHz, T a=+25°C, Zs=Zl=50Ω, with application circuit
PARAMETERS
Insertion Loss
Input power at
1dB gain
compression point2
Input 3rd order
intercept point2
SYMBOL
Loss
CONDITIONS
Exclude PCB
& connector losses *1
P-1dB
(IN)2
IIP3_2
f1=freq, f2=freq+100kHz,
PIN=-10dBm
MIN
TYP
MAX
UNITS
-
5.0
7.0
dB
-1.0
+10.0
-
dBm
+3.0
+10.0
-
dBm
RF IN Return loss2
RLi2
7.0
12.0
-
dB
RF OUT Return loss2
RLo2
8.0
12.0
-
dB
*1 Input & output PCB and connector losses: 0.58dB (5500MHz)
-3-
NJG1148MD7
I TERMINAL INFORMATION
No.
1, 4, 8, 11,
13, 14
SYMBOL
DESCRIPTION
No connected terminal. This terminal is not connected with internal
NC(GND) circuit. Please connect this terminal with ground place as close as
possible for excellent RF performance.
2
RFIN
RF input terminal. This IC integrates an input DC blocking capacitor.
3, 5, 6, 12
GND
Ground terminal. This terminal should be connected to the ground
plane as close as possible for excellent RF performance.
7
VCTL
Control voltage terminal.
9
VDD
Supply voltage terminal for LNA and logic circuit. Bypass to ground
with capacitor C1 as close as possible to the IC.
10
RFOUT
RF output terminal. This IC integrates an input DC blocking capacitor.
-4-
NJG1148MD7
I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: VDD=3.3V, VCTL=1.8V, Ta=25oC, Zs=Zl=50Ω, with application circuit
Pout vs. Pin
Gain, IDD vs. Pin
(f=5500MHz)
15
(f=5500MHz)
15
10
15
5
10
0
Gain (dB)
Pout (dBm)
P-1dB(OUT)=8.6dBm
-5
Pout
-10
-15
IDD
0
-20
IDD (mA)
10
5
20
Gain
5
-25
P-1dB(IN)=-2.5dBm
-35
-30
-25
-20
-15
-10
P-1dB(IN)=-2.5dBm
-5
-5
-40
0
0
-35
-30
-25
Pin (dBm)
Gain (dB)
Pout, IM3 (dBm)
Pout
-20
-40
IM3
3.5
13
3
12
2.5
11
2
10
1.5
9
-80
1
NF
8
-20
-15
-10
-5
Pin (dBm)
0
5
0.5
(Exclude PCB, connector losses)
IIP3=+6.9dBm
-25
0
4
Gain
14
20
-100
-30
-5
15
OIP3=+18.7dBm
-60
-10
Gain, NF vs. frequency
(f1=5500MHz, f2=f1+100kHz)
0
-15
Pin (dBm)
Pout, IM3 vs. Pin
40
-20
NF (dB)
-30
-40
10
7
4000
4500
5000
5500
6000
6500
0
7000
freqency (MHz)
-5-
NJG1148MD7
I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: VDD=3.3V, VCTL=1.8V, Ta=25oC, Zs=Zl=50Ω, with application circuit
P-1dB(IN) vs. frequency
OIP3, IIP3 vs. frequency
(f=4900~5950MHz)
5
(f1=4900~5950MHz, f2=f1+100kHz, Pin=-25dBm)
30
P-1dB(IN)
OIP3, IIP3 (dBm)
P-1dB(IN) (dBm)
25
0
-5
OIP3
20
15
10
-10
IIP3
5
-15
4500
4750
5000
5250
5500
5750
0
4500
6000
5000
frequency (MHz)
Gain vs. Interference Power
16
5500
6000
frequency (MHz)
K factor vs. frequency
(f=5500MHz, Pin=-30dBm, f Tx =1940MHz)
20
(f = 50MHz ~ 20GHz)
20
16
14
15
12
12
10
8
8
4
K factor
Gain (dB)
Gain
10
5
Psat(Tx-1dB)=-10.0dBm
6
-40
0
-35
-30
-25
-20
-15
-10
Interference Power (dBm)
-5
0
0
0
5
10
15
20
frequency (GHz)
-6-
NJG1148MD7
I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: VDD=3.3V, VCTL=1.8V, Ta=25oC, Zs=Zl=50Ω, with application circuit
S11, S22 (0.05~10GHz)
VSWRi, VSWRo (0.05~10GHz)
S11, S22 (0.05~20GHz)
S21, S12 (0.05~10GHz)
Zin, Zout (0.05~10GHz)
S21, S12 (0.05~20GHz)
-7-
NJG1148MD7
I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: VCTL=1.8V, Ta=25oC, Zs=Zl=50Ω, with application circuit
Gain, NF vs. VDD
IDD vs. VDD
(RF off)
14
4
13
12
3.5
Gain (dB)
8
6
12
3
11
2.5
10
2
9
1.5
NF
8
4
NF (dB)
Gain
10
IDD (mA)
(f=5500MHz)
14
1
7
0.5
Exclude PCB, Connector Losses
2
6
2
2.5
3
3.5
4
4.5
5
0
2
2.5
3
4
4.5
5
VDD (V)
VDD (V)
RL vs. VDD
P-1dB(IN) vs. VDD
(f=5500MHz)
20
3.5
(f=5500MHz)
10
RLi
P-1dB(IN) (dBm)
RLi, RLo (dB)
15
10
RLo
5
5
0
-5
0
-10
2
2.5
3
3.5
4
4.5
5
2
2.5
3
VDD (V)
4.5
5
(f=5500MHz)
0
OIP3
Psat(Tx-1dB) (dBm)
OIP3, IIP3 (dBm)
20
4
Psat(Tx-1dB) vs. VDD
IIP3, OIP3 vs. VDD
(f1=5500MHz, f2=f1+100kHz, Pin1=Pin2=-25dBm)
25
3.5
VDD (V)
15
10
-5
-10
-15
5
IIP3
0
-20
2
2.5
3
3.5
VDD (V)
4
4.5
5
2
2.5
3
3.5
4
4.5
5
VDD (V)
-8-
NJG1148MD7
I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: VDD=3.3V, VCTL=1.8V, Zs=Zl=50Ω, with application circuit
Gain, NF vs. Temperature
IDD vs. Temperature
(RF off)
10
(f=5500MHz)
15
4
14
3.5
8
Gain
6
4
3
12
2.5
11
2
10
1.5
NF (dB)
Gain (dB)
IDD (mA)
13
NF
9
1
8
0.5
2
0
-40
-20
0
20
40
60
80
7
-40
100
-20
0
20
60
80
0
100
Temperature ( oC)
Temperature (oC)
RL vs. Temperature
P-1dB(IN) vs. Temperature
(f=5500MHz)
20
40
(f=5500MHz)
5
RLin
P-1dB(IN) (dBm)
RL (dB)
15
10
5
0
-40
RLout
-20
0
0
P-1dB(IN)
-5
-10
20
40
60
80
-15
-40
100
-20
20
40
60
80
100
Psat(Tx-1dB) vs. Temperature
OIP3, IIP3 vs. Temperature
25
0
Temperature (oC)
Temperature (oC)
(f1=5500MHz, f2=f1+100kHz, Pin=-25dBm)
0
(f1=5500MHz, Pin=-30dBm, f2=1940MHz)
OIP3
P-1dB(IN) (dBm)
OIP3, IIP3 (dBm)
20
15
10
5
IIP3
-5
Psat(Tx-1dB)
-10
-15
0
-5
-40
-20
0
20
40
60
Temperature (oC)
80
100
-20
-40
-20
0
20
40
60
80
100
Temperature (oC)
-9-
NJG1148MD7
I ELECTRICAL CHARACTERISTICS (LNA mode)
Conditions: VDD=3.3V, VCTL=1.8V, Zs=Zl=50Ω, with application circuit
Kfactor vs. Temperature
IDD vs. VCTL
(f=50MHz~20GHz)
20
(RF off)
10
-40(oC)
-20(oC)
15
8
0(oC)
IDD (mA)
K factor
25(oC)
60(oC)
85(oC)
10
6
-40(oC)
4
-20(oC)
0(oC)
25(oC)
5
2
60(oC)
85(oC)
0
0
0
5
10
Frequency(GHz)
15
20
0
0.5
1
1.5
2
VCTL (V)
- 10 -
NJG1148MD7
I ELECTRICAL CHARACTERISTICS (Bypass mode)
Conditions: VDD=3.3V, VCTL=0V, Ta=25oC, Zs=Zl=50Ω, with application circuit
Pout vs. Pin
Loss, IDD vs. Pin
(f=5500MHz)
(f=5500MHz)
3
P-1dB(OUT)=8.1dBm
Loss (dB)
10
Pout (dBm)
20.0
Loss
0
Pout
-10
4
16.0
5
12.0
6
8.0
IDD
7
-20
4.0
P-1dB(IN)=+13.0dBm
-30
-20
-15
-10
-5
0
5
P-1dB(IN)=+13.0dBm
10
8
-20
15
0.0
-15
-10
-5
0
5
10
15
Pin (dBm)
Pin (dBm)
Pout, IM3 vs. Pin
Loss vs. frequency
(f1=5500MHz, f2=f1+100kHz)
20
IDD (uA)
20
0
OIP3=+6.9dBm
0
2
-20
Loss (dB)
Pout, IM3 (dBm)
Pout
-40
-60
4
Loss
6
IM3
8
-80
(Exclude PCB, connector losses)
10
4000
IIP3=+10.8dBm
-100
-20
-15
-10
-5
0
5
10
15
4500
5000
5500
6000
6500
7000
frequency(MHz)
Pin (dBm)
P-1dB(IN) vs. frequency
25
OIP3, IIP3 vs. frequency
(f=4900~5950MHz)
16
(f1=4900~5950MHz, f2=f1+100kHz, Pin=-10dBm)
OIP3, IIP3 (dBm)
P-1dB(IN) (dBm)
14
20
15
P-1dB(IN)
10
12
IIP3
10
8
6
OIP3
5
4500
5000
5500
frequency (MHz)
6000
4
4500
5000
5500
6000
frequency (MHz)
- 11 -
NJG1148MD7
I ELECTRICAL CHARACTERISTICS (Bypass mode)
Conditions: VDD=3.3V, VCTL=0V, Ta=25oC, Zs=Zl=50Ω, with application circuit
S11, S22 (0.05~10GHz)
VSWRi, VSWRo (0.05~10GHz)
S11, S22 (0.05~20GHz)
S21, S12 (0.05~10GHz)
Zin, Zout (0.05~10GHz)
S21, S12 (0.05~20GHz)
- 12 -
NJG1148MD7
I ELECTRICAL CHARACTERISTICS (Bypass mode)
Conditions: VCTL=0V, Ta=25oC, Zs=Zl=50Ω, with application circuit
Loss vs. VDD
IDD vs. VDD
(RF off)
10
2
Loss (dB)
IDD (uA)
8
6
4
4
6
8
2
10
0
2
2.5
3
3.5
4
4.5
2
5
2.5
3
3.5
4
VDD (V)
VDD (V)
RL vs. VDD
P-1dB(IN) vs. VDD
(f=5500MHz)
20
18
RLo
16
RLi
14
4.5
5
4.5
5
(f=5500MHz)
20
P-1dB(IN) (dBm)
RLi, RLo (dB)
(f=5500MHz)
0
15
10
5
12
10
0
2
2.5
3
3.5
4
4.5
5
2
2.5
3
3.5
4
VDD (V)
VDD (V)
OIP3, IIP3 vs. VDD
(f=5500MHz)
14
IIP3
OIP3, IIP3 (dBm)
12
10
8
6
OIP3
4
2
2
2.5
3
3.5
4
4.5
5
VDD (V)
- 13 -
NJG1148MD7
I ELECTRICAL CHARACTERISTICS (Bypass mode)
Conditions: VDD=3.3V, VCTL=1.8V, Zs=Zl=50Ω, with application circuit
IDD vs. Temperature
Loss vs. Temperature
(RF off)
10
(f=5500MHz)
0.0
1.0
8
Loss (dB)
IDD (uA)
2.0
6
4
3.0
4.0
5.0
6.0
2
7.0
0
-40
-20
0
20
40
60
80
8.0
-40
100
-20
0
20
40
60
80
Temperature ( oC)
Temperature (oC)
RL vs. Temperature
P-1dB(IN) vs. Temperature
(f=5500MHz)
20
100
(f=5500MHz)
20
RLo
P-1dB(IN) (dBm)
15
RL (dB)
RLi
10
5
0
-40
15
P-1dB(IN)
10
5
-20
0
20
40
60
80
0
-40
100
-20
0
40
60
100
(50MHz~20GHz)
(f1=5500MHz, f2=f1+100kHz, Pin=-10dBm)
20
-40(oC)
IIP3
-20(oC)
12
0(oC)
15
25(oC)
60(oC)
10
Kfactor
OIP3, IIP3 (dBm)
80
Kfactor vs. Temperature
OIP3, IIP3 vs. Temperature
14
20
Temperature ( oC)
Temperature ( oC)
OIP3
8
6
4
-40
85(oC)
10
5
-20
0
20
40
60
Temperature ( oC)
80
100
0
0
5
10
15
20
Frequency(GHz)
- 14 -
NJG1148MD7
I APPLICATION CIRCUIT
(Top View)
1PIN INDEX
NC(GND)
14
1
GND
NC(GND)
13
12
11
Bypass
circuit
NC(GND)
RF IN
NC(GND)
2
10
LNA circuit
RFIN
RFOUT
3
9
Logic
circuit
GND
VDD
4
NC(GND)
RF OUT
VDD
C1 1000pF
8
5
6
GND
7
GND
NC(GND)
VCTL
VCTL
I TEST PCB LAYOUT
PARTS LIST
C1
Parts ID
Manufacturer
C1
MURATA
GRM03 Series
RF OUT
RF IN
1PIN INDEX
VCTL
VDD
PCB
Substrate: FR4
Thickness: 0.2mm
MICROSTRIP LINE WIDTH
: 0.40mm (Z0=50Ω)
PCB SIZE: 17.0mm x 17.0mm
PRECAUTIONS
・Bypass capacitor C1 is placed as close as possible to the IC.
・In order not to couple with terminal RFIN and RFOUT, please layout ground pattern under the IC.
・All GND terminals must be connected to PCB ground place in order to reduce the inductance
as soon as possible.
- 15 -
NJG1148MD7
I MEASUREMENT BLOCK DIAGRAM
Measuring instruments
NF Analyzer
: Agilent 8975A
Noise Source
: Agilent 346A
Setting the NF analyzer
Measurement mode form
Device under test
: Amplifier
System downconverter
: off
Mode setup form
Sideband
: LSB
Averages
: 16
Average mode
: Point
Bandwidth
: 4MHz
Loss comp
: off
Tcold
: setting the temperature of noise source (300K)
NF Analyzer
(Agilent 8975A)
Noise Source
(Agilent 346A)
Preamplifier
(Gain=12.5dB,
NF=1.5dB)
Input (50Ω)
Noise Source
Drive Output
* Noise sauce,
the preamplifier,
and NF analyzer are
connected directly.
Calibration Setup
NF Analyzer
(Agilent 8975A)
Preamplifier
(Gain=12.5dB,
NF=1.5dB)
Noise Source
(Agilent 346A)
* Noise sauce, DUT,
IN
DUT
OUT
Input (50Ω)
Noise Source
Drive Output
the preamplifier,
and NF analyzer are
connected directly.
Measurement Setup
- 16 -
NJG1148MD7
I PACKAGE OUTLINE (ESON14-D7)
Unit
Substrate
Terminal Treat
Molding Material
Weight
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
: mm
: Cu
: SnBi
: Epoxy Resin
: 3.4mg
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions.
The application circuits in this databook are
described only to show representative
usages of the product and not intended for
the guarantee or permission of any right
including the industrial rights.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please
handle with care to avoid these damages.
- 17 -