NJG1117HA8
GPS LOW NOISE AMPLIFIER GaAs MMIC
Q GENERAL DESCRIPTION
This IC is a Low noise amplifier GaAs MMIC designed for
GPS. This amplifier provides low noise figure, high gain and
high IP3 operated by single low positive power supply.
This amplifier can be tuned to wide frequency point
(1.5GHz~2.4GHz).
An ultra-small and ultra-thin package of USB6-A8 is adopted.
Q FEATURES
O Low voltage operation
O Low current consumption
O High small signal gain
O Low noise figure
O Input power at 1dB gain compression point
O High input IP3
O Ultra-small & ultra-thin package
Q PACKAGE OUTLINE
NJG1117HA8
+2.7V typ.
3.0mA typ.
19.5dB typ. @ f=1.575GHz
0.7dB typ. @ f=1.575GHz
-16.5 dBm typ. @f=1.575GHz
-2.0dBm typ. @f=1.575GHz+1.5751GHz
USB6-A8 (Package size: 1.0x1.2x0.38mm)
Q PIN CONFIGURATION
HA8 Type
(Top View)
GND
3
R FIN
GND
4
Pin connection
1. RFOUT
2. GND
3. GND
4. RFIN
5. GND
6. GND
2
Bias
Circuit
GN D
RFOU T
5
1
GN D
6
1Pin INDEX
Note: Specifications and description listed in this datasheet are subject to change without notice.
Ver.2007-06-22
-1-
NJG1117HA8
Q ABSOLUTE MAXIMUM RATINGS
Ta=+25°C, Zs=Zl=50 ohm
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNITS
5.0
V
Drain Voltage
VDD
Input power
Pin
VDD=2.7V
+15
dBm
Power dissipation
PD
On PCB board, Tjmax=150°C
150
mW
Operating temperature
Topr
-40~+85
°C
Storage temperature
Tstg
-55~+150
°C
Q ELECTRICAL CHARACTERISTICS
GENERAL CONDITIONS: VDD=2.7V, fRF=1575MHz, Ta=+25°C, Zs=Zl=50 ohm, with application circuit.
PARAMETERS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating Frequency
freq
1.57
1.575
1.58
GHz
Operating voltage
VDD
2.5
2.7
3.6
V
Operating current1
IDD
-
3.0
4.0
mA
17.5
19.5
22.0
dB
-
0.7
1.0
dB
-19.0
-16.5
-
dBm
-8.0
-2.0
-
dBm
Small signal gain
Noise figure
Input power at 1dB gain
compression point
Input 3rd order
intercept point
RF OFF
Gain
NF
Exclude PCB & connector
losses (IN: 0.05dB)
P-1dB(IN)
IIP3
f1=fRF, f2=fRF+100kHz,
Pin=-34dBm
RF IN VSWR
VSWRi
-
2.0
2.5
RF OUT VSWR
VSWRo
-
1.5
2.0
-2-
NJG1117HA8
Q TERMINAL INFORMATION
No.
SYMBOL
DESCRIPTION
1
RFOUT
RF Output and voltage supply pin. An external output matching circuit and a
bypass capacitor are required. L3 is a RF choke inductor. These elements are
used as output matching circuit.
2
GND
Ground terminal. (0V)
3
GND
Ground terminal. (0V)
4
RFIN
RF input pin. A DC blocking capacitor is not required. An external input matching
circuit is required.
5
GND
Ground terminal. (0V)
6
GND
Ground terminal. (0V)
CAUTION
1) Ground terminal (2, 3, 5, 6) should be connected with the ground plane as low inductance as possible.
-3-
NJG1117HA8
Q ELECTRICAL CHARACTERISTICS
(Conditions: Ta=+25°C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.)
Pout vs. Pin
Gain, IDD vs. Pin
(VDD=2.7V, fRF=1575MHz)
10
7
Gain (dB)
Pout
-5
-10
-15
P-1dB(IN)=-16.6dBm
-20
-25
-40
-30
-20
-10
0
20
6
18
5
4
14
3
12
2
10
8
-40
10
IDD
16
1
P-1dB(IN)=-16.2dBm
0
-30
-20
Pin (dBm)
-10
0
10
Pin (dBm)
NF, Gain vs. frequency
Pout, IM3 vs. Pin
(VDD=2.7V)
(VDD=2.7V, fRF=1575+1575.1MHz)
2.5
22
20
21
0
2
20
1.5
19
NF
1
18
0.5
17
Gain (dB)
Gain
Pout, IM3 (dBm)
3
Pout
-20
-40
-60
IM3
-80
IIP3=-1.9dBm
(NF: Exclude PCB, Connector Losses)
0
1.5
1.55
16
1.65
1.6
frequency (GHz)
(VDD=2.7V)
k factor
15
10
5
0
0
5
10
frequency (GHz)
-4-
-30
-20
-10
Pin (dBm)
k factor vs. frequency
20
-100
-40
15
20
0
10
IDD (mA)
Gain
0
Noise Figure (dB)
8
22
5
Pout (dBm)
(VDD=2.7V, fRF=1575MHz)
24
NJG1117HA8
Q ELECTRICAL CHARACTERISTICS
(Conditions: Ta=+25°C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.)
Gain, NF vs. VDD
P-1dB(IN) vs. VDD
(fRF=1575MHz)
24
22
3.5
-10
3
-12
(fRF=1575MHz)
2.5
18
2
16
1.5
14
1
NF
12
10
2.4
P-1dB(IN) (dBm)
20
NF (dB)
Gain (dB)
Gain
0.5
2.6
2.8
3
3.2
3.4
3.6
-14
P-1dB(IN)
-16
-18
-20
-22
0
3.8
-24
2.4
2.6
2.8
VDD (V)
3.4
3.6
3.8
VSWR vs. VDD
(fRF=1575+1575.1MHz, Pin=-34dBm)
10
8
20
6
OIP3
18
4
16
2
14
0
IIP3
12
VSWRi
4
VSWRo
VSWRi, VSWRo
22
(fRF=1575MHz)
5
IIP3 (dBm)
OIP3 (dBm)
3.2
VDD (V)
OIP3, IIP3 vs. VDD
24
3
3
2
-2
1
-4
10
8
2.4
2.6
2.8
3
3.2
3.4
3.6
-6
3.8
VDD (V)
0
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
VDD (V)
IDD vs. VDD
(RF OFF)
6
5
IDD (mA)
4
IDD
3
2
1
0
2.4
2.6
2.8
3
3.2
3.4
3.6
3.8
VDD (V)
-5-
NJG1117HA8
Q ELECTRICAL CHARACTERISTICS
(Conditions: Ta=+25°C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.)
Gain, NF vs. Temperature
24
22
Gain
3.5
-10
3
-12
2.5
18
2
16
1.5
14
NF (dB)
Gain (dB)
20
P-1dB(IN) vs. Temperature
1
P-1dB(IN) (dBm)
(fRF=1575MHz)
(fRF=1575MHz)
-14
-16
P-1dB(IN)
-18
-20
NF
12
-22
0.5
10
-50
0
-24
-50
0
100
50
Temperature (oC)
OIP3, IIP3 vs. Temperature
(fRF=1575+1575.1MHz, Pin=-34dBm)
20
5
10
4
5
10
0
5
IIP3
0
50
-5
-10
100
Temperature (oC)
(RF OFF)
IDD (mA)
4
3
IDD
2
1
0
50
Temperature (oC)
-6-
(f=1575MHz)
VSWRi
3
2
1
0
-50
0
50
Temperature (oC)
IDD vs. Temperature
5
IIP3 (dBm)
OIP3 (dBm)
15
0
-50
100
VSWRo
OIP3
0
-50
50
VSWR vs. Temperature
15
VSWRi, VSWRo
25
0
Temperature (oC)
100
100
NJG1117HA8
Q ELECTRICAL CHARACTERISTICS
(Conditions: Ta=+25°C, VDD= 2.7V, Zs=Zl=50 ohm, with application circuit.)
-7-
NJG1117HA8
Q APPLICATION CIRCUIT
HA8 Type
(Top View)
GND
3
L2
8.2nH
RFIN
RF IN
GND
4
2
L1
33nH
Bias
Circuit
GND
RFOUT
L4
C1
22nH
1.5pF
RF OUT
1
5
L3
GND
6.8nH
VDD=2.7V
6
C2
1000pF
1Pin INDEX
Q TEST PCB LAYOUT
(Top View)
Parts list
Parts ID
L1 ~ L3
L4
L1
C1
RF OUT
RF IN
L2
C2
L4 L3
VDD
C1 ~ C2
Comment
MURATA
(LQP03T Series)
TDK
(MLK0603 Series)
MURATA
(GRM03 Series)
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE WIDTH
=0.34mm (Z0=50 ohm)
PCB SIZE=14.0mm x 14.0mm
PRECAUTION:
In order to prevent stability degradation in high frequency range, please prepare ground plane
between terminal 4(RFIN) and terminal 1(RFOUT).
-8-
NJG1117HA8
Q MEASUREMENT BLOCK DIAGRAM
VDD=2.7V
VDD=2.9V
RF Output
RF Input
DUT
Port1
Port2
Network
Analyzer
S parameter Measurement Block Diagram
VDD=2.7V
VDD=2.9V
RF Input
RF Output
DUT
N.S. Output
Input
Noise Source
NF
Meter
Analyzer
Noise Figure Measurement Block Diagram
VDD=2.7V
freq1
freq1=865.0MHz
VDD=2.9V
Isolator
Signal
Generator
RF Input
DUT
Signal
Generator
freq2=865.1MHz
freq2
Isolator
Power
Comb.
6dB
Variable
Attenuator
RFOutput
Spectrum
Analyzer
Center=865.05Hz
Span=400kHz
RBW=3kHz
VBW=100Hz
IIP3 Measurement Block Diagram
-9-
NJG1117HA8
0.38±0.06
+0.012
0.038-0.009
Q PACKAGE OUTLINE (USB6-A8)
0.03
0.2 (MIN0.15)
S
S
TERMINAL TREAT
Substrate
Molding material
UNIT
WEIGHT
:Au
:FR5
:Epoxy resin
:mm
:1.1mg
0.2±0.04
C0.1
6
R0.05
5
1
4
0.2±0.04
0.4
0.6
Photo resist coating
0.8
1.2±0.05
0.1±0.05
2
3
0.4
0.2±0.07
1.0±0.05
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
- 10 -
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.