NJG1131HA8
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
IGENERAL DESCRIPTION
NJG1131HA8 is a low noise amplifier GaAs MMIC designed for
mobile digital TV application (470~770 MHz).
This IC features good gain flatness, and low gain characteristic
in out-of-band. This IC achieves low current consumption, low
noise figure and low distortion. Also, this IC is integrated the
ESD protection circuit.
An ultra-small and ultra-thin package of USB6-A8 is adopted.
IPACKAGE OUTLINE
NJG1131HA8
IAPPLICATIONS
Wide band application from 470MHz to 770MHz
Mobile TV and Digital TV applications
Mobile phone and tablet PC applications
IFEATURES
G Wide operating frequency range
G Low voltage operation
G Low current consumption
G Gain
G Low noise figure
G High P-1dB(IN)
G High Input IP3
G Ultra-small & ultra-thin package
470~770MHz
+2.7V typ.
3.4mA typ.
10.0dB typ.
1.4dB typ.
-5.0dBm typ.
+5.0dBm typ.
USB6-A8 (Package size: 1mm x 1.2mm x 0.38mm typ.)
IPIN CONFIGURATION
(Top View)
GND
VG
6
1
RFOUT
5
Bias
Circuit
Pin Connection
1. GND
2. RFIN
3. GND
4. GND
5. RFOUT
6. VG
1 Pin INDEX
2
RFIN
4
GND
3
GND
Note: Specifications and description listed in this catalog are subject to change without notice.
Ver.2013-04-23
-1-
NJG1131HA8
I ABSOLUTE MAXIMUM RATINGS
Ta=+25°C, Zs=Zl=50 ohm
PARAMETER
CONDITIONS
SYMBOL
RATINGS
UNITS
5
V
Drain Voltage
VDD
VDD terminal
Input power
PIN
VDD=2.7V
+15
dBm
Power dissipation
PD
On PCB board, Tjmax=150°C
150
mW
Operating temperature
Topr
-40~+85
°C
Storage temperature
Tstg
-55~+150
°C
I ELECTRICAL CHARACTERISTICS 1 (DC)
General conditions: VDD=2.7V, Ta=+25°C, Zs=Zl=50 ohm, with application circuit.
PARAMETERS
SYMBOL
Operating voltage
VDD
Operating Current
IDD
CONDITIONS
RF OFF
MIN
TYP
MAX
UNITS
2.3
2.7
3.6
V
-
3.4
5.0
mA
I ELECTRICAL CHARACTERISTICS 2 (RF)
General conditions: VDD= 2.7V, fRF=470~770MHz, Ta=+25°C, Zs=Zl=50 ohm, with application circuit.
MIN
TYP
MAX
UNITS
fRF
470
620
770
MHz
Small signal gain
Gain
8.0
10.0
12.0
dB
Gain flatness
Gflat
-
1.1
1.4
dB
Noise figure
NF
-
1.4
1.8
dB
-8.0
-5.0
-
dBm
+2.0
+5.0
-
dBm
PARAMETERS
Operating Frequency
Input power at 1dB gain
compression point
Input 3rd order
intercept point
SYMBOL
CONDITIONS
Exclude PCB & connector
losses (0.05dB)
P-1dB(IN)
IIP3
f1=fRF, f2=fRF+100kHz,
Pin=-28dBm
RF IN VSWR
VSWRi
-
2.6
3.0
RF OUT VSWR
VSWRo
-
2.9
3.3
-2-
NJG1131HA8
ITERMINAL INFORMATION
No.
SYMBOL
DESCRIPTION
1
GND
Ground terminal.
2
RFIN
RF input terminal. This terminal requires the DC-blocking capacitor and the
DC-feed Inductor as shown in the application circuit.
3
GND
Ground terminal.
4
GND
Ground terminal.
5
RFOUT
RF output terminal. This terminal requires the external matching circuit as
shown in the application circuit.
6
VG
Power supply pin of the bias circuit. Please supply the voltage as same as the
LNA voltage.
CAUTION
1) Ground terminals (1pin, 3pin and 4pin) should be connected with the ground plane close as possible.
-3-
NJG1131HA8
I ELECTRICAL CHARACTERISTICS
(Conditions: Ta=+25°C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.)
Pout vs. Pin
Gain, IDD vs. Pin
(fRF=620MHz)
(fRF=620MHz)
10
12
5
8
11
7
Gain
0
10
6
9
5
8
4
-10
Pout
-15
7
-20
2
5
-30
1
P-1dB(IN)=-3.4dBm
-35
-30
-25
-20
-15
-10
-5
P-1dB(IN)=-3.4dBm
4
0
0
-40
-35
-30
-25
Pin (dBm)
Pout, IM3 vs. Pin
-10
-5
0
Gain, NF vs. Frequency
20
12
4
11
0
3.5
Gain
Pout
Gain (dB)
Pout, IM3 (dBm)
-15
Pin (dBm)
(f1=620MHz, f2=620.1MHz)
-20
-20
-40
10
3
9
2.5
8
2
7
-60
1.5
NF
6
1
5
0.5
-80
IIP3=+7.6dBm
IM3
-100
-40
-30
-20
-10
0
4
10
400
450
500
Pin (dBm)
550
600
650
700
750
0
800
Frequency (MHz)
IIP3, OIP3 vs. Frequency
P-1dB(IN) vs. Frequency
(f1=Frequency, f2=Frequency+0.1MHz, Pin=-28dBm)
5
20
OIP3
15
IIP3, OIP3 (dBm)
P-1dB(IN) (dBm)
0
P-1dB(IN)
-5
-4-
IIP3
5
-10
-15
400
10
450
500
550
600
650
Frequency (MHz)
700
750
800
0
400
450
500
550
600
650
Frequency (MHz)
700
750
800
NF (dB)
-35
-40
3
IDD
6
-25
IDD (mA)
Gain (dB)
Pout (dBm)
-5
NJG1131HA8
I ELECTRICAL CHARACTERISTICS
(Conditions: Ta=+25°C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.)
Gain, NF vs. VDD
K-factor vs. Frequency
(fRF=620MHz)
30
12
25
10
6
5
8
4
6
3
10
4
2
5
2
Gain (dB)
K-factor
20
15
NF (dB)
Gain
NF
1
0
0
0
0
5000
10000
15000
20000
0
1
2
Frequency (MHz)
3
4
5
VDD (V)
P-1dB(IN) vs. VDD
IIP3, OIP3 vs. VDD
(fRF=620MHz)
(f1=620MHz, f2=620.1MHz, Pin=-28dBm)
5
25
20
IIP3, OIP3 (dBm)
P-1dB(IN) (dBm)
0
P-1dB(IN)
-5
15
OIP3
10
5
IIP3
-10
0
-5
-15
0
1
2
3
4
0
5
1
3
VDD (V)
IDD vs. VDD
VSWR vs. VDD
(RF OFF)
4
5
4
5
(fRF=470~770MHz)
8
6
7
VSWRi(max.), VSWRo(max.)
7
5
IDD (mA)
2
VDD (V)
4
3
IDD
2
1
6
5
4
VSWRo(max.)
3
2
VSWRi(max.)
1
0
0
0
1
2
3
VDD (V)
4
5
0
1
2
3
VDD (V)
-5-
NJG1131HA8
I ELECTRICAL CHARACTERISTICS
(Conditions: VDD=2.7V, Zs=Zl=50 ohm, with application circuit.)
P-1dB(IN) vs. Temp.
Gain, NF vs. Temp.
(fRF=620MHz)
(fRF=620MHz)
5
6
12
Gain
5
10
4
6
3
4
2
P-1dB(IN) (dBm)
8
NF (dB)
Gain (dB)
0
P-1dB(IN)
-5
-10
NF
1
2
0
-50
0
50
0
100
-15
-50
0
50
Temperature (C o)
Temperature (C o)
100
IDD vs. Temp.
IIP3, OIP3 vs. Temp.
(RF OFF)
(f1=620MHz, f2=620.1MHz, Pin=-28dBm)
7
25
6
20
5
15
IDD (mA)
IIP3, OIP3 (dBm)
OIP3
10
4
3
IDD
IIP3
2
5
1
0
-50
0
50
100
o
Temperature (C )
(fRF=470~770MHz)
8
VSWRi(max.), VSWRo(max.)
7
6
5
4
VSWRo(max.)
3
VSWRi(max.)
1
0
-50
0
50
Temperature (C o)
-6-
0
50
Temperature (C o)
VSWR vs. Temp.
2
0
-50
100
100
NJG1131HA8
I ELECTRICAL CHARACTERISTICS
(Conditions: Ta=+25°C, VDD=2.7V, Zs=Zl=50 ohm, with application circuit.)
S11, S22
S21, S12
VSWR
Zin, Zout
S11, S22 (~20GHz)
S21, S12 (~20GHz)
-7-
NJG1131HA8
I TEST CIRCUIT
C3
1000pF
GND
VG
RFOUT
6
1
VDD=2.7V
L3
27nH
RFOUT
5
L2
56nH
Bias
Circuit
C2
3pF
RFIN
2
C1
68pF
L1
33nH
RFIN
4
GND
3
GND
I TEST PCB LAYOUT
Parts List
Parts ID
VDD
L1~L3
C1~C3
C3 L3
L1
RF IN
C1
Notes
MURATA
(LQP03T series)
MURATA
(GRM03 series)
L2
C2
RF OUT
PCB (FR-4):
t=0.2mm
MICROSTRIP LINE
WIDTH=0.4mm (Z0=50 ohm)
PCB SIZE=16.8mmx16.8mm
PRECAUTIONS
[1] C1 is a DC-Blocking capacitor, and L1 is a DC-feed inductor.
[2] L2, L3, and C2 formed the output matching circuit.
[3] C3 is a bypass capacitor.
[4] Ground terminals (1pin, 3pin and 4pin) should be connected with ground plane as close as possible
in order to limit ground path induction.
[5] All external parts are placed as close as possible to the IC.
-8-
NJG1131HA8
I MEASUREMENT BLOCK DIAGRAM
VDD=2.7V
VDD=2.9V
RF Output
RF Input
DUT
Port2
Port1
Network
Analyzer
S parameter Measurement Block Diagram
VDD=2.7V
VDD=2.9V
RF Input
RF Output
DUT
N.S. Output
Input
Noise Source
NF
Analyzer
Meter
Noise Figure Measurement Block Diagram
freq1
VDD=2.7V
3dB
Attenuator
Signal
Generator
RF Input
Signal
Generator
freq2
DUT
RF Output
Spectrum
Analyzer
Power
Comb.
3dB
Attenuator
IF and IM3 Measurement Block Diagram for IIP3
-9-
NJG1131HA8
0.38±0.06
+0.012
0.038-0.009
IPACKAGE OUTLINE (USB6-A8)
0.03
0.2 (MIN0.15)
S
S
TERMINAL TREAT
Substrate
Molding material
UNIT
WEIGHT
:Au
:FR5
:Epoxy resin
:mm
:1.1mg
0.2±0.04
C0.1
6
R0.05
5
1
4
0.2±0.04
0.4
0.6
Photo resist coating
0.8
1.2±0.05
0.1±0.05
2
3
0.4
0.2±0.07
1.0±0.05
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
• Do NOT eat or put into mouth.
• Do NOT dispose in fire or break up this product.
• Do NOT chemically make gas or powder with this product.
• To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
- 10 -
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.