Si3441DV
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
• –3.5 A, –20 V.
Applications
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 80 mΩ @ VGS = –4.5 V
RDS(ON) = 110 mΩ @ VGS = –2.5 V
• Low gate charge
• Battery management
• Load switch
• Battery protection
D
D
S
SuperSOT TM-6
D
D
6
2
5
3
4
G
Absolute Maximum Ratings
Symbol
1
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
–3.5
A
PD
Maximum Power Dissipation
– Continuous
(Note 1a)
– Pulsed
TJ, TSTG
–20
(Note 1a)
1.6
(Note 1b)
0.8
W
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
30
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.441
Si3441DV
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
Si3441DV Rev A (W)
Si3441DV
April 2001
PRELIMINARY
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
–12
mV/°C
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA, Referenced to 25°C
VDS = –16 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V
VDS = 0 V
–100
nA
On Characteristics
–20
V
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
3
60
82
77
–0.4
ID(on)
On–State Drain Current
VGS = –4.5 V, ID = –3.5 A
VGS = –2.5 V, ID = –3.1 A
VGS = –4.5 V, ID = –3.5A,TJ=125°C
VGS = –4.5 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –3.5 A
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
–0.8
–1.5
V
mV/°C
80
110
112
mΩ
–10
A
11
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
779
pF
121
pF
56
pF
(Note 2)
10
20
ns
9
19
ns
Turn–Off Delay Time
27
43
ns
tf
Turn–Off Fall Time
11
20
ns
Qg
Total Gate Charge
7.2
10
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = –10 V,
VGS = –4.5 V,
VDS = –10 V,
VGS = –4.5 V
ID = –1 A,
RGEN = 6 Ω
ID = –3.5 A,
1.7
nC
1.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –1.3 A
–0.8
(Note 2)
–1.3
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a 1in2 pad
of 2 oz copper
b)
156°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Si3441DV Rev A (W)
Si3441DV
Electrical Characteristics
Si3441DV
Typical Characteristics
15
2
VGS = -4.5V
-2.5V
-3.5V
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-3.0V
12
9
-2.0V
6
3
-1.5V
VGS=-2.0V
1.8
1.6
-2.5V
1.4
-3.0V
1.2
-3.5V
-4.5V
1
0.8
0
0
1
2
3
0
4
3
6
Figure 1. On-Region Characteristics.
15
0.22
ID = -3.5A
VGS = -4.5V
1.3
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
12
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.2
1.1
1
0.9
0.8
0.7
ID = -1.8A
0.18
0.14
TA = 125oC
0.1
TA = 25oC
0.06
0.02
-50
-25
0
25
50
75
100
125
150
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
TA = -55oC
25oC
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
-ID, DRAIN CURRENT (A)
9
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
8
125oC
6
4
2
0
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si3441DV Rev A (W)
Si3441DV
Typical Characteristics
1000
ID = -3.5A
VDS = -5V
-10V
800
-15V
3
2
1
600
400
COSS
200
0
CRSS
0
0
1
2
3
4
5
6
7
8
9
0
5
Qg, GATE CHARGE (nC)
15
20
Figure 8. Capacitance Characteristics.
10
10 RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W)
100
100µs
1ms
10ms
100ms
1
1s
DC
VGS = -10V
SINGLE PULSE
RθJA = 156oC/W
0.1
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 156°C/W
TA = 25°C
8
6
4
2
0
0.01
0.1
1
10
100
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
-ID, DRAIN CURRENT (A)
f = 1 MHz
VGS = 0 V
CISS
4
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
RθJA = 156 C/W
0.1
o
0.1
P(pk)
0.05
t1
0.02
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si3441DV Rev A (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
Star* Power™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
UltraFET 
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1