FDD4141
tm
P-Channel PowerTrench® MOSFET
-40V, -50A, 12.3mΩ
Features
General Description
„ Max rDS(on) = 12.3mΩ at VGS = -10V, ID = -12.7A
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
superior performance benefit in the applications. and optimized
switching performance capability reducing power dissipation
losses in converter/inverter applications.
„ Max rDS(on) = 18.0mΩ at VGS = -4.5V, ID = -10.4A
„ High performance trench technology for extremely low rDS(on)
„ RoHS Compliant
Applications
„ Inverter
„ Power Supplies
S
D
G
G
S
D
-PA
K
TO
-2 52
(TO -252)
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous (Package limited)
ID
TC = 25°C
-Continuous (Silicon limited)
TC = 25°C
-Continuous
TA = 25°C
PD
TJ, TSTG
Units
V
±20
V
-50
-58
(Note 1a)
-Pulsed
-10.8
A
-100
Single Pulse Avalanche Energy
EAS
Ratings
-40
(Note 3)
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
337
69
(Note 1a)
Operating and Storage Junction Temperature Range
2.4
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.8
(Note 1a)
52
°C/W
Package Marking and Ordering Information
Device Marking
FDD4141
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
Device
FDD4141
Package
D-PAK (TO-252)
1
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDD4141 P-Channel PowerTrench® MOSFET
July 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
-40
V
ID = -250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -32V, VGS = 0V
-1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
-3
V
-29
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
5.8
VGS = -10V, ID = -12.7A
10.1
12.3
VGS = -4.5V, ID = -10.4A
14.5
18.0
VGS = -10V, ID = -12.7A,
TJ = 125°C
15.3
18.7
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
-1
VDS = -5V, ID = -12.7A
-1.8
mV/°C
38
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -20V, VGS = 0V,
f = 1MHz
f = 1MHz
2085
2775
pF
360
480
pF
210
310
pF
Ω
4.6
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to -10V
Qg
Total Gate Charge
VGS = 0V to -5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -20V, ID = -12.7A,
VGS = -10V, RGEN = 6Ω
VDD = -20V,
ID = -12.7A
10
19
ns
7
13
ns
38
60
ns
15
27
ns
36
50
nC
19
27
nC
7
nC
8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -12.7A
(Note 2)
IF = -12.7A, di/dt = 100A/µs
-0.8
-1.2
V
29
44
ns
26
40
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 52°C/W when mounted on a
1 in2 pad of 2 oz copper
b) 100°C/W when mounted
on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 40V, VGS = 10V.
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
2
www.fairchildsemi.com
FDD4141 P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
80
VGS = -4.5V
VGS = -4V
60
VGS = -10V
40
VGS = -3.5V
20
VGS = -3V
0
0
1
2
3
4
3.5
3.0
VGS = -3.5V
2.5
VGS = -4V
2.0
1.5
VGS = -4.5V
1.0
VGS = -10V
0.5
0
5
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
rDS(on), DRAIN TO
1.0
0.8
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.2
100
ID = -12.7A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
45
35
25
TJ = 125oC
15
TJ = 25oC
5
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
100
100
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
80
55
ID = -12.7A
VGS = -10V
1.4
0.6
-75
40
60
-ID, DRAIN CURRENT(A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -3V
80
VDS = -5V
60
40
TJ = 150oC
20
TJ = 25oC
TJ = -55oC
0
1
2
3
4
VGS = 0V
10
TJ = 150oC
1
TJ = 25oC
0.1
0.01
TJ = -55oC
1E-3
0.0
5
0.2
0.4
0.6
0.8
1.0
-VGS, GATE TO SOURCE VOLTAGE (V)
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
3
1.2
www.fairchildsemi.com
FDD4141 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10000
ID = -12.7A
8
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = -15V
6
VDD = -20V
VDD = -10V
4
Ciss
1000
Coss
2
f = 1MHz
VGS = 0V
100
0.1
0
0
8
16
24
32
40
1
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
60
-ID, DRAIN CURRENT (A)
30
-IAS, AVALANCHE CURRENT(A)
40
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
10
TJ = 25oC
TJ = 125oC
50
40
VGS = -4.5V
30
VGS = -10V
Limited by Package
20
10
o
RθJC = 1.8 C/W
1
0.01
0.1
1
10
100
0
25
1000
50
75
100
125
150
o
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
10000
P(PK), PEAK TRANSIENT POWER (W)
200
100
-ID, DRAIN CURRENT (A)
Crss
100us
10
THIS AREA IS
LIMITED BY rDS(on)
1ms
10ms
SINGLE PULSE
TJ = MAX RATED
1
DC
RθJC = 1.8oC/W
TC = 25oC
0.1
0.1
1
10
100
-VDS, DRAIN to SOURCE VOLTAGE (V)
FOR TEMPERATURES
oC DERATE PEAK
ABOVE 25SINGLE
PULSE
o
CURRENTRAS FOLLOWS:
= 1.8 C/W
θ JC
150 – T
C
-----------------------I = I25
125
1000
TC = 25oC
100
50
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
2
10
10
3
10
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe
Operating Area
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
VGS = -10V
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDD4141 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.005
-5
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
o
RθJC = 1.8 C/W
-4
10
-3
-2
10
10
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
5
www.fairchildsemi.com
FDD4141 P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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As used herein:
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which, (a) are intended for surgical implant into the body or
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
2. A critical component in any component of a life support,
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner
without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data
will be published at a later date. Fairchild Semiconductor
reserves the right to make changes at any time without notice
to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at any
time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has
been discontinued by Fairchild Semiconductor.The datasheet
is printed for reference information only.
Rev. I29
©2007 Fairchild Semiconductor Corporation
FDD4141 Rev.C
6
www.fairchildsemi.com
FDD4141 P-Channel PowerTrench® MOSFET
tm