BC807/BC808
BC807/BC808
Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
• Complement to BC817/BC818
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCES
VCEO
Parameter
Value
Units
: BC807
: BC808
-50
-30
V
V
: BC807
: BC808
-45
-25
V
V
Collector-Emitter Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-800
mA
PC
Collector Power Dissipation
-310
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Collector-Emitter Breakdown Voltage
: BC807
: BC808
Test Condition
IC= -10mA, IB=0
Collector-Emitter Breakdown Voltage
: BC807
: BC808
IC= -0.1mA, VBE=0
BVEBO
Emitter-Base Breakdown Voltage
IE= -0.1mA, IC=0
ICES
Collector Cut-off Current
VCE= -25V, VBE=0
IEBO
Emitter Cut-off Current
VEB= -4V, IC=0
hFE1
hFE2
DC Current Gain
VCE= -1V, IC= -100mA
VCE= -1V, IC= -300mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -500mA, IB= -50mA
-0.7
V
VBE (on)
Base-Emitter On Voltage
VCE= -1V, IC= -300mA
-1.2
V
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA
f=50MHz
Cob
Output Capacitance
VCB= -10V, f=1MHz
BVCES
©2002 Fairchild Semiconductor Corporation
Min.
Typ.
Max.
Units
-45
-25
V
V
-50
-30
V
V
-5
V
100
60
-100
nA
-100
nA
630
100
MHz
12
pF
Rev. A2, August 2002
Classification
16
25
40
hFE1
100 ~ 250
160 ~ 400
250 ~ 630
hFE2
60-
100-
170-
Marking Code
Type
807-16
807-25
807-40
808-16
808-25
808-40
Marking
9FA
9FB
9FC
9GA
9GB
9GC
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC807/BC808
hFE Classification
BC807/BC808
Typical Characteristics
-20
IB=
mA
- 5.0 A
I B = - 4.5m
I B = 4.0mA
A
I B = - 3.5m A
I B = - 3.0m A
I B = - 2.5m
mA
IB =
- 2.0
IB =
-400
-300
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
-500
A
1.5m
IB = -
-200
PT = 60
0mW
IB = - 1.0mA
IB = - 0.5mA
-100
µA
- 80
µA
- 70
I =
B
-16
IB=
µA
- 60
IB=
P
T
µA
- 50
-12
IB=
µA
- 40
IB = -
-8
30µA
µA
IB = - 20
-4
IB = - 10µA
IB = 0
-0
-0
-1
-2
-3
-4
IB = 0
-0
-5
-0
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
PULSE
hFE, DC CURRENT GAIN
VCE = - 2.0V
100
- 1.0V
10
-1
-10
-100
-20
-30
-40
-50
Figure 2. Static Characteristic
1000
1
-0.1
-10
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
-1000
-10
IC = 10 IB
PULSE
V CE(sat)
-1
-0.1
V BE(sat)
-0.01
-0.1
IC[mA], COLLECTOR CURRENT
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
-1000
f = 1.0MHz
VCE = -1V
PULSE
Cib, Cob[pF], CAPACITANCE
IC[mA], COLLECTOR CURRENT
=6
00
mW
-100
-10
-1
-0.1
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
Cib
Cob
10
1
-0.1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
©2002 Fairchild Semiconductor Corporation
VEB[V], EMITTER-BASE VOLTAGE
Figure 6. Input Output Capacitance
Rev. A2, August 2002
BC807/BC808
Typical Characteristics (Continued)
fT[MHz], GAIN BANDWIDTH PRODUCT
1000
VCE = -5.0V
100
10
-1
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC807/BC808
Package Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1