N-Channel MOSFET 600V, 4.0A, 2.2Ω
General Description
Features
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent
quality.
VDS = 600V
ID = 4.0A
RDS(ON) ≤ 2.2Ω
@ VGS = 10V
@ VGS = 10V
Applications
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Power Supply
PFC
High Current, High Speed Switching
D
G
TO-220F
MDF Series
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Symbol
Rating
Unit
VDSS
600
V
VGSS
o
TC=25 C
Continuous Drain Current
ID
o
TC=100 C
Pulsed Drain Current
(1)
IDM
Power Dissipation
o
Derate above 25 C
(1)
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(4)
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
A
2.53*
A
16*
A
W
0.28
W/ C
3.47
mJ
dv/dt
4.5
V/ns
EAS
170
mJ
TJ, Tstg
-55~150
Symbol
Rating
RθJA
62.5
RθJC
3.6
PD
EAR
(3)
V
34.7
o
TC=25 C
±30
4.0*
o
o
C
* Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Mar. 2012 Version 1.0
(1)
(1)
1
Unit
o
C/W
MagnaChip Semiconductor Ltd.
MDF4N60D N-channel MOSFET 600V
MDF4N60D
Part Number
Temp. Range
MDF4N60DTH
-55~150 C
o
Package
Packing
RoHS Status
TO-220F
Tube
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250µA, VGS = 0V
600
-
-
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250µA
2.0
-
4.0
IDSS
VDS = 600V, VGS = 0V
-
-
1
µA
VGS = ±30V, VDS = 0V
-
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
IGSS
RDS(ON)
VGS = 10V, ID = 2.0A
gfs
VDS = 30V, ID = 2.0A
V
-
100
nA
1.85
2.2
Ω
-
6.6
-
S
-
14.0
-
-
2.4
-
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
-
8.3
-
Input Capacitance
Ciss
-
560
-
VDS = 480V, ID = 4.0A, VGS = 10V
(3)
Reverse Transfer Capacitance
Crss
-
7.0
-
Output Capacitance
Coss
-
63.3
-
Turn-On Delay Time
td(on)
-
12.3
-
-
13.8
-
-
46
-
tf
-
22.8
-
IS
-
4.0
-
A
-
-
1.4
V
-
231
-
ns
-
1.0
-
µC
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VDS = 25V, VGS = 0V, f = 1.0MHz
nC
VGS = 10V, VDS = 300V, ID = 4.0A,
(3)
RG = 25Ω
pF
ns
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
Source Diode Forward Current
Source-Drain Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery
Charge
Qrr
IS = 4.0A, VGS = 0V
IF = 4.0A, dl/dt = 100A/µs
(3)
Note :
1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤4.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=19.5mH, IAS=4.0A, VDD=50V, Rg =25Ω, Starting TJ=25°C,
Mar. 2012 Version 1.0
2
MagnaChip Semiconductor Ltd.
MDF4N60D N-channel MOSFET 600V
Ordering Information
Vgs=4.0V
=4.5V
=5.0V
=5.5V
=6.0V
=8.0V
=10.0V
=15.0V
5
4
3.5
3.0
RDS(ON) [Ω ]
ID,Drain Current [A]
6
Notes
1. 250㎲ Pulse Test
2. TC=25℃
3
VGS=10.0V
2.5
2
VGS=20V
1
2.0
0
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
0
2
4
VDS,Drain-Source Voltage [V]
1.2
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
※ Notes :
1. VGS = 10 V
2. ID = 2.0A
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
10
ID,Drain Current [A]
3.0
2.0
1.5
1.0
0.5
0.0
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
1.1
1.0
0.9
0.8
-50
0
50
100
150
-50
0
o
150
Fig.4 Breakdown Voltage Variation vs.
Temperature
※ Notes :
1. VGS = 0 V
2.250µs Pulse test
IDR
Reverse Drain Current [A]
* Notes ;
1. Vds=30V
150℃
-55℃
25℃
0.1
4
10
150℃
25℃
1
0.1
0.0
6
VGS [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain Voltage [V]
Fig.5 Transfer Characteristics
Mar. 2012 Version 1.0
100
TJ, Junction Temperature [ C]
Fig.3 On-Resistance Variation with
Temperature
1
50
o
TJ, Junction Temperature [ C]
ID(A)
8
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
10
6
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
MagnaChip Semiconductor Ltd.
MDF4N60D N-channel MOSFET 600V
7
MDF4N60D N-channel MOSFET 600V
1200
10
1000
120V
VGS, Gate-Source Voltage [V]
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Note : ID = 4.0A
C oss
300V
8
480V
800
C iss
Capacitance [pF]
6
4
600
400
2
200
0
0
0
2
4
6
8
10
12
14
1
16
10
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
10
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
C rss
Fig.8 Capacitance Characteristics
2
Operation in This Area
is Limited by R DS(on)
D=0.5
0
1
10
100 µs
0.2
1 ms
10
Zθ JC(t),
Thermal Response
ID, Drain Current [A]
10
10 ms
100 ms
1s
0
DC
10
-1
0.1
0.05
0.02
-1
10
0.01
Single Pulse
TJ=Max rated
TC=25℃
10
single pulse
-2
-2
10
-1
10
0
10
1
10
10
2
-5
10
-4
10
-3
10
-2
-1
10
0
10
1
10
10
t1, Rectangular Pulse Duration [sec]
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
Fig.10 Transient Thermal Response Curve
6
10000
single Pulse
RthJC = 3.6℃/W
TC = 25℃
ID, Drain Current [A]
8000
Power (W)
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=3.6℃/W
6000
4000
4
2
2000
0
1E-5
1E-4
1E-3
0.01
0.1
1
0
10
25
Pulse Width (s)
75
100
125
150
TC, Case Temperature [℃]
Fig.12 Maximum Drain Current vs. Case
Temperature
Fig.11 Single Pulse Maximum Power
Dissipation
Mar. 2012 Version 1.0
50
4
MagnaChip Semiconductor Ltd.
MDF4N60D N-channel MOSFET 600V
Physical Dimensions
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
S y mbol
A
b
b1
C
D
E
e
F
G
L
L1
Q
Q1
￠R
Mar. 2012 Version 1.0
Min
4.50
0.63
1.15
0.33
15.47
9.60
Nom
Max
4.93
0.91
1.47
0.63
16.13
10.71
2.54
2.34
6.48
12.24
2.79
2.52
3.10
3.00
2.84
6.90
13.72
3.67
2.96
3.50
3.55
5
MagnaChip Semiconductor Ltd.
MDF4N60D N-channel MOSFET 600V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
Mar. 2012 Version 1.0
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MagnaChip Semiconductor Ltd.