AOTF3N80
800V, 2.8A N-Channel MOSFET
General Description
Product Summary
The AOTF3N80 has been fabricated using an advanced
high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular ACDC applications.By providing low RDS(on), Ciss and Crss
along with guaranteed avalanche capability this part can
be adopted quickly into new and existing offline power
supply designs.
VDS
ID (at VGS=10V)
900V@150℃
2.8A
RDS(ON) (at VGS=10V)
< 4.8Ω
100% UIS Tested
100% Rg Tested
For Halogen Free add "L" suffix to part number:
AOTF3N80L
Top View
D
TO-220F
G
AOTF3N80
G
D
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
TC=100°C
ID
AOTF3N80
800
Units
V
±30
V
2.8*
1.8*
A
Pulsed Drain Current C
IDM
9
Avalanche Current C
IAR
2.2
A
Repetitive avalanche energy C
EAR
72
mJ
145
5
35
mJ
V/ns
W
0.3
-55 to 150
W/ oC
°C
300
°C
AOTF3N80
65
3.6
Units
°C/W
°C/W
Single pulsed avalanche energy G
EAS
Peak diode recovery dv/dt
dv/dt
TC=25°C
PD
Power Dissipation B Derate above 25oC
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering
TL
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
Rev.1.0 May 2013
www.aosmd.com
Page 1 of 5
AOTF3N80
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
ID=250µA, VGS=0V, TJ=25°C
800
Typ
Max
Units
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
BVDSS
/∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
ID=250µA, VGS=0V, TJ=150°C
900
V
ID=250µA, VGS=0V
0.78
V/ oC
VDS=800V, VGS=0V
1
VDS=640V, TJ=125°C
10
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
4.2
4.5
nΑ
V
VGS=10V, ID=1.5A
3.8
4.8
Ω
VDS=40V, ID=1.5A
2.5
IS=1A,VGS=0V
0.77
1
V
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
3.3
S
2.8
A
9
A
510
VGS=0V, VDS=25V, f=1MHz
pF
39
pF
3.7
pF
VGS=0V, VDS=0V, f=1MHz
2.9
Ω
10
nC
VGS=10V, VDS=640V, ID=3A
2.6
nC
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
±100
µA
Qgd
Gate Drain Charge
2.9
nC
tD(on)
Turn-On DelayTime
21
ns
tr
Turn-On Rise Time
25
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=400V, ID=3A,
RG=25Ω
34
ns
19
ns
IF=3A,dI/dt=100A/µs,VDS=100V
344
Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
2.2
ns
µC
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, IAS=2.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0 May 2013
www.aosmd.com
Page 2 of 5
AOTF3N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
10
-55°C
10V
VDS=40V
4
6.5V
ID (A)
3
125°C
ID(A)
6V
2
1
5.5V
1
25°C
VGS=5V
0
0
5
10
15
20
25
0.1
30
2
4
VDS (Volts)
Fig 1: On-Region Characteristics
10
8
10
Normalized On-Resistance
3
8
VGS=10V
RDS(ON) (Ω)
6
VGS(Volts)
Figure 2: Transfer Characteristics
6
4
2
1.5
3
4.5
6
VGS=10V
ID=1.5A
2
1.5
1
0.5
0
-100
0
0
2.5
7.5
-50
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1E+02
1E+0040
125°C
IS (A)
BVDSS (Normalized)
1E+01
1.1
1
1E-01
25°C
1E-02
1E-03
0.9
1E-04
0.8
-100
-50
0
50
100
150
200
1E-05
TJ (°C)
Figure 5: Break Down vs. Junction Temperature
Rev.1.0 May 2013
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AOTF3N80
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10000
15
VDS=640V
ID=3A
Capacitance (pF)
VGS (Volts)
12
9
6
1000
Ciss
100
Coss
10
Crss
3
1
0
0
3
6
9
12
0.1
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
1
10
100
VDS (Volts)
Figure 8: Capacitance Characteristics
100
3
10
2
ID (Amps)
Current rating ID(A)
2.5
1.5
10µs
RDS(ON)
limited
100µs
1
1ms
1
10ms
DC
0.1
0.5
0.1s
1s
TJ(Max)=150°C
TC=25°C
0.01
0
0
25
50
75
100
125
150
1
10
100
1000
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF3N80 (Note F)
TCASE (°C)
Figure 9: Current De-rating (Note B)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
Single Pulse
0.01
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF3N80 (Note F)
Rev.1.0 May 2013
www.aosmd.com
Page 4 of 5
AOTF3N80
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Qrr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.1.0 May 2013
L
Isd
+ Vdd
trr
dI/dt
IRM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 5 of 5